Silicon-based OLED display screen and anode and preparation method thereof
By adding pixel insulating layers and conductive pillars to the Micro OLED display, increasing the channel depth, and breaking the organic materials between pixels, the leakage problem was solved and the color gamut performance of the product was improved.
Patent Information
- Application Number
- CN202610262711.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-05
- Publication Date
- 2026-05-19
AI Technical Summary
Existing Micro OLED displays suffer from insufficient channel depth at the center of the separation layer between the anode metal pixel structure, resulting in incomplete separation of the evaporated organic materials between pixels. This leads to slight leakage between sub-pixels, affecting the color gamut of the product and failing to meet the needs of high color scenarios.
A pixel insulating layer is added between the anode metal and the silicon substrate, and conductive pillars are embedded in the insulating layer to increase the depth of the PDL central channel, disconnect the organic materials between pixels, and raise the anode metal through the pixel insulating layer to form an island structure to prevent leakage.
This effectively solves the problem of slight leakage between subpixels, ensuring that subpixels of other colors do not emit light when the Micro OLED product is lit in monochrome, thus improving the product's color gamut performance.
Smart Images
Figure CN122069916A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor device technology, and in particular to a low-leakage, high-color-gamut Micro OLED display anode and its fabrication method, and a low-leakage, high-color-gamut Micro OLED display. Background Technology
[0002] In the field of micro-display technology, silicon-based OLED (Micro OLED) is a rapidly developing technology in recent years and has already entered the mass production stage. However, the structural diagram of existing Micro OLED full-color products is as follows: Figure 1 As shown, because the channel depth at the center of the partition layer (PDL) between the anode metal pixel structure is insufficient, the evaporated organic materials between pixels are not completely separated, and the light-emitting layers between different sub-pixels are still connected to each other. Holes and electrons can flow between sub-pixels, and there is slight leakage between the anodes of the sub-pixels. When the Micro OLED product is lit in monochrome, the sub-pixels of other colors also emit light slightly, which seriously affects the color gamut of the product after lighting and cannot meet some high color scenarios. Summary of the Invention
[0003] In view of this, the purpose of this invention is to provide a low-leakage, high-color-gamut Micro OLED display anode and its fabrication method, as well as a low-leakage, high-color-gamut Micro OLED display. The Micro OLED display anode provided by this invention raises the anode metal through the pixel insulating layer, increases the depth of the PDL central channel, and disconnects the evaporated organic material between pixels, thus solving the problem of slight leakage between sub-pixel anodes. This ensures that when the Micro OLED product is lit in monochrome, other color sub-pixels do not have micro-emission issues, thereby improving the color gamut of the lit product.
[0004] To achieve the above-mentioned objectives, the present invention provides the following technical solution: This invention provides a low-leakage, high-color-gamut Micro OLED display anode, comprising: A silicon substrate, wherein through-holes are spaced apart; A pixel insulating layer is provided at intervals on the surface of the silicon substrate and covers the through-hole. A conductive pillar is embedded in the pixel insulating layer. The conductive pillar is connected to the metal in the through-hole and has the same size as the through-hole. Anode metal, wherein the anode metal is disposed on the surface of the pixel insulating layer; An organic light-emitting layer is disposed on the surface of the anode metal and the silicon substrate, and the organic light-emitting layer does not completely cover the side of the anode metal.
[0005] Preferably, the thickness of the pixel insulating layer is 30~100nm.
[0006] Preferably, the pixel insulating layer is made of one or more of silicon nitride, silicon dioxide, and aluminum oxide.
[0007] Preferably, the conductive post is made of metal.
[0008] Preferably, the height of the conductive pillar is 30~100nm and is the same as the height of the pixel insulating layer.
[0009] Preferably, the thickness of the anode metal is 60~200nm.
[0010] Preferably, the silicon substrate is a CMOS substrate.
[0011] The present invention also provides a method for preparing the anode of the Micro OLED display described in the above technical solution, comprising the following steps: A first film is deposited on the surface of a silicon substrate to form a non-conductive insulating film. A first photolithography and a first etching are then performed on the surface of the non-conductive insulating film to obtain a pixel insulating layer. A second photolithography and a second etching are performed sequentially on the surface of the pixel insulating layer to form a through-hole in the pixel insulating layer. A second coating, polishing, a third photolithography and a third etching are performed sequentially on the surface of the obtained substrate to obtain a conductive pillar. The second coating forms a conductive pillar layer. An anode metal is formed on the surface of the substrate from which the conductive pillar is obtained; An organic light-emitting layer is formed on the surface of the anode metal and the silicon substrate to obtain the anode of the Micro OLED display.
[0012] Preferably, the thickness of the conductive pillar layer is 40~120nm.
[0013] The present invention also provides a low leakage current and high color gamut Micro OLED display, comprising an anode, a cathode, an encapsulation layer, a color filter layer, an adhesive and a transparent cover plate stacked sequentially. The anode is the low leakage current and high color gamut Micro OLED display anode described in the above technical solution, and the cathode is disposed on the surface of the organic light-emitting layer; The adhesive wraps around the side of the color filter layer and is also disposed on the surface of the encapsulation layer that is not covered by the color filter layer.
[0014] This invention provides a low-leakage, high-color-gamut Micro OLED display anode, comprising: a silicon substrate with vias spaced apart; a pixel insulating layer disposed on the surface of the silicon substrate and covering the vias, wherein conductive pillars are embedded within the pixel insulating layer and are connected to metal in the vias and have the same size as the vias; an anode metal disposed on the surface of the pixel insulating layer; and an organic light-emitting layer disposed on the surfaces of the anode metal and the silicon substrate, wherein the organic light-emitting layer does not completely cover the side of the anode metal.
[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention adds a pixel insulating layer between the anode metal and the silicon substrate, embedding conductive pillars within the pixel insulating layer. The width of the pixel insulating layer is the same as the size of the anode metal, and the conductive pillars are connected to the metal in the silicon substrate and have the same size as the vias. By raising the anode metal through the pixel insulating layer, the depth of the PDL central channel is increased, and the organic material deposited between pixels is disconnected, thus solving the problem of slight leakage between sub-pixel anodes. This ensures that when the Micro OLED product is lit in monochrome, other color sub-pixels do not have micro-emission issues, thereby improving the color gamut of the product after lighting.
[0016] The present invention also provides a method for preparing the anode of the Micro OLED display screen. The preparation method of the present invention is simple to operate and suitable for industrial application.
[0017] The present invention also provides a Micro OLED display with low leakage current and high color gamut, characterized by a high color gamut. Attached Figure Description
[0018] Figure 1 A schematic diagram of the structure of an existing Micro OLED full-color product; Figure 2 This is a schematic diagram of the structure of the anode of the low leakage current and high color gamut Micro OLED display described in this invention; Figure 3 A schematic diagram of the structure after the formation of a non-conductive insulating film; Figure 4 This is a schematic diagram of the structure after photoresist coating; Figure 5 This is a schematic diagram of the exposure process; Figure 6 This is a schematic diagram of the development process; Figure 7 This is a schematic diagram of the structure after the pixel insulating layer is formed; Figure 8 A photolithographic schematic diagram of a through-hole in the pixel insulating layer; Figure 9 This is a schematic diagram of the via etching process in the pixel insulating layer. Figure 10 This is a schematic diagram of the substrate structure after the second coating forms a conductive pillar layer, using tungsten as an example. Figure 11 This is a schematic diagram of the structure of a polished substrate, using tungsten as an example. Figure 12 This is a schematic diagram of the substrate structure after the third photolithography step, using tungsten as an example. Figure 13 This is a schematic diagram of the substrate structure after the third etching, using tungsten as an example. Figure 14 This is a schematic diagram of the substrate structure after the anode metal has been formed; Figure 15 This is a schematic diagram of the substrate structure after the encapsulation layer has been formed; Figure 16 This is a schematic diagram of the substrate structure after the color filter layer has been formed; Figure 17 This is a schematic diagram of the structure of the low leakage current and high color gamut Micro OLED display of the present invention. Detailed Implementation
[0019] This invention provides a low-leakage, high-color-gamut Micro OLED display anode, comprising: A silicon substrate, wherein through-holes are spaced apart; A pixel insulating layer is provided at intervals on the surface of the silicon substrate and covers the through-hole. A conductive pillar is embedded in the pixel insulating layer. The conductive pillar is connected to the metal in the through-hole and has the same size as the through-hole. Anode metal, wherein the anode metal is disposed on the surface of the pixel insulating layer; An organic light-emitting layer is disposed on the surface of the anode metal and the silicon substrate, and the organic light-emitting layer does not completely cover the side of the anode metal.
[0020] Figure 2 This is a schematic diagram of the structure of the anode of the low-leakage, high-color-gamut silicon-based Micro OLED display described in this invention. The following is in conjunction with... Figure 2 The low leakage current and high color gamut silicon-based Micro OLED display anode of the present invention will be described.
[0021] The anode of the low leakage current and high color gamut Micro OLED display described in this invention includes a silicon substrate.
[0022] In this invention, the silicon substrate is preferably a CMOS substrate.
[0023] The present invention does not impose any special limitation on the size of the CMOS substrate, and commercially available products well known to those skilled in the art can be used.
[0024] The anode of the low-leakage, high-color-gamut Micro OLED display described in this invention includes a pixel insulating layer.
[0025] In this invention, the thickness of the pixel insulating layer is preferably 30~100nm, specifically 30, 40, 50, 60, 70, 80, 90 or 100nm. By raising the anode metal through the pixel insulating layer, the depth of the PDL central channel is increased, the organic material evaporated between pixels is disconnected, the slight leakage problem between the anodes of sub-pixels is solved, and it is ensured that when the Micro OLED product is lit in monochrome, there is no micro-emission problem in the sub-pixels of other colors, thereby improving the color gamut of the product after lighting.
[0026] In this invention, the material of the pixel insulating layer preferably includes silicon nitride (SiN). x One or more of silicon dioxide (SiO2) and aluminum oxide (Al2O3).
[0027] In this invention, the conductive pillar is preferably made of metal, and the metal is preferably copper (Cu) or tungsten (W).
[0028] In this invention, the height of the conductive pillar is preferably 30~100nm and is the same as the thickness of the pixel insulating layer, specifically 30, 40, 50, 60, 70, 80, 90 or 100nm.
[0029] The anode of the low leakage current and high color gamut Micro OLED display described in this invention comprises an anode metal.
[0030] In this invention, the thickness of the anode metal is preferably 60~200nm, specifically 60, 80, 100, 120, 140, 160, 180 or 200nm.
[0031] In this invention, the anode metal is preferably made of one or more of Ti, Al, TiN, ITO and Ag, and more preferably Ti-Al-Ti, Ti-TiN-Al-TiN, Ti-TiN-Al-TiN-ITO or Ti-Ag-TiN.
[0032] The low-leakage, high-color-gamut Micro OLED display anode of this invention includes an organic light-emitting layer. This invention does not impose any special limitations on the material of the organic light-emitting layer; any organic light-emitting layer material well-known to those skilled in the art can be used. In this invention, the organic light-emitting layer has a discontinuous structure because the channel depth between the anode metal pixels exceeds the thickness of the organic light-emitting layer. At this point, the organic materials are disconnected through deep channels, forming isolated islands. When a single sub-pixel is energized, holes and electrons cannot affect the light emission of the organic materials on other sub-pixels, thus solving the problem of slight leakage between sub-pixel anodes. This ensures that when the Micro OLED product is lit in monochrome, other color sub-pixels do not have micro-emission issues, thereby improving the color gamut of the illuminated product.
[0033] In this invention, the thickness of the organic light-emitting layer is preferably 100~250nm, specifically 100, 120, 150, 180, 200, 220 or 250nm.
[0034] The present invention also provides a method for preparing the anode of the Micro OLED display described in the above technical solution, comprising the following steps: A first film is deposited on the surface of a silicon substrate to form a non-conductive insulating film. A first photolithography and a first etching are then performed on the surface of the non-conductive insulating film to obtain a pixel insulating layer. A second photolithography and a second etching are performed sequentially on the surface of the pixel insulating layer to form a through-hole in the pixel insulating layer. A second coating, polishing, a third photolithography and a third etching are performed sequentially on the surface of the obtained substrate to obtain a conductive pillar. The second coating forms a conductive pillar layer. An anode metal is formed on the surface of the substrate from which the conductive pillar is obtained; An organic light-emitting layer is formed on the surface of the anode metal and the silicon substrate to obtain the anode of the Micro OLED display.
[0035] Unless otherwise specified, all raw materials used in this invention are commercially available products in the field.
[0036] In this invention, a first film is deposited on the surface of a silicon substrate to form a non-conductive insulating film. Then, a first photolithography and a first etching are performed sequentially on the surface of the non-conductive insulating film to obtain a pixel insulating layer.
[0037] In this invention, the thickness of the non-conductive insulating film is preferably 30~100nm, specifically 30, 40, 50, 60, 70, 80, 90 or 100nm. This invention does not have any special limitation on the parameters of the first coating film, and can adopt methods known to those skilled in the art. The thickness of the non-conductive insulating film can increase the depth of the PDL central channel. The increased depth will completely disconnect the light-emitting material in the organic light-emitting layer (and the cathode and other film layers in the display screen), solving the problem that when the anode metal of a single R sub-pixel is connected to the cathode (holes are injected into the anode, electrons are injected into the cathode, electrons and holes recombine in the light-emitting layer to form excitons, and photons are released when the excitons return from the excited state to the ground state), the light-emitting material on the adjacent G / B sub-pixels will be affected by the electrons and holes of the R sub-pixel.
[0038] In this invention, the material of the non-conductive insulating film is preferably the same as the material of the pixel insulating layer, which will not be described in detail here.
[0039] Figure 3 This is a schematic diagram of the structure after the formation of a non-conductive insulating film.
[0040] After forming the non-conductive insulating film, the present invention preferably conveys the coated substrate into a coating machine, and performs a first photolithography and a first etching on the surface of the non-conductive insulating film in sequence to obtain a pixel insulating layer.
[0041] In this invention, the first photolithography preferably includes sequentially performing photoresist coating (PR), exposure processing, and development.
[0042] Figure 4 This is a schematic diagram of the structure after photoresist coating.
[0043] In this invention, the substrate coated with photoresist is preferably fed into a photolithography machine. The photoresist-free portions that do not need to remain on the surface are exposed to UV light during the exposure process, while the portions that need to remain on the substrate surface are shielded from light. Figure 5 This is a schematic diagram of the exposure process.
[0044] In this invention, the exposure energy for the exposure treatment is preferably 50~200 J / m. 2 Specifically, it can be 50, 100, 150 or 200 J / m 2 .
[0045] Preferably, this invention involves washing away the photoresist in the exposed areas using a developing solution within a developing machine, leaving the desired pattern on the substrate surface. Figure 6 This is a schematic diagram of the development process.
[0046] In this invention, the development time is preferably 40 to 100 seconds, specifically 40, 50, 60, 70, 80, 90 or 100 seconds.
[0047] In this invention, the developer is preferably a tetramethylammonium hydroxide solution (TMAH developer), and the mass concentration of the tetramethylammonium hydroxide solution is preferably 2.38%.
[0048] After the first photolithography is completed, the present invention preferably transfers the obtained substrate into an etching device to perform the first etching.
[0049] In this invention, the first etching is preferably dry etching, which is preferably performed in a dry etching apparatus. The non-conductive insulating film not protected by PR is first etched away by etching gas, and then the PR is removed by dry etching to form the pixel insulating layer.
[0050] In this invention, when the non-conductive insulating film is SiN x When the first etching gas is SiO2, the etching gas preferably includes a fluorocarbon gas, which preferably includes one or more of CF4, CHF3 and C4F8; when the non-conductive insulating film is SiO2, the etching gas preferably includes a mixture of CHF3 and CF4; when the non-conductive insulating film is Al2O3, the etching gas preferably includes a mixture of BCl3, Cl2 and Ar; the etching gas preferably also includes PR etching ashing gas O2.
[0051] Figure 7 This is a schematic diagram of the structure after the pixel insulating layer is formed.
[0052] After obtaining the pixel insulating layer, the present invention performs a second photolithography and a second etching on the surface of the pixel insulating layer to form a through hole in the pixel insulating layer. Then, a second coating, polishing, a third photolithography and a third etching are performed on the surface of the obtained substrate to obtain a conductive pillar. The second coating forms a conductive pillar layer.
[0053] The present invention preferably involves sequentially applying a resist, exposing, and developing the vias to create a photoresist pattern on the pixel insulating layer. The positions of the vias correspond one-to-one with the positions of the vias in the silicon substrate. The width of the vias matches the size of the vias in the silicon substrate. The thickness of the photoresist pattern (i.e., the height of the vias) is preferably 0.4~2μm, specifically 0.4, 0.8, 1.2, 1.6, or 2μm, to avoid insufficient photoresist thickness during via etching, which could lead to etching of the pixel insulating layer surface. Figure 8 This is a photolithographic schematic diagram of the through-hole in the pixel insulating layer.
[0054] In this invention, the second etching is preferably the same as the first etching. Preferably, the substrate after development is conveyed into a dry etching apparatus, and the non-conductive insulating film not protected by PR is first etched away by the corresponding etching gas, and then the PR is removed by dry etching to form the through hole of the pixel insulating layer. Figure 9 This is a schematic diagram of the via etching of the pixel insulating layer.
[0055] The present invention does not impose any special limitations on the specific parameters of the second coating; any method known to those skilled in the art can be used.
[0056] In this invention, the material of the second coating is preferably copper (Cu) or tungsten (W).
[0057] In this invention, the thickness of the conductive pillar layer is preferably 40~120nm, specifically 40, 60, 80, 100 or 120nm.
[0058] Taking tungsten as an example, the structure of the substrate after the second coating forms the conductive pillar layer is as follows: Figure 10 As shown.
[0059] In this invention, the polishing is preferably chemical mechanical polishing (CMP), which is preferably performed in a CMP apparatus. Preferably, the conductive pillar layer protruding above the pixel insulating layer is ground away using a CMP polishing slurry and abrasive pads. Taking tungsten as an example... Figure 11 This is a schematic diagram of the structure of the polished substrate.
[0060] In this invention, the third photolithography step is preferably the same as the first photolithography step in terms of steps and parameters. Taking tungsten as an example, Figure 12 This is a schematic diagram of the substrate structure after the third photolithography.
[0061] In this invention, the thickness of PR during the third photolithography process is preferably 0.4~2μm, specifically 0.4, 0.8, 1.2, 1.6 or 2μm.
[0062] After the third photolithography is completed, the present invention preferably transfers the obtained substrate into an etching device for the third etching.
[0063] In this invention, the third etching is preferably dry etching, which is preferably performed in a dry etching apparatus. Using etching gas, the conductive pillar layer not protected by the PR is first etched away, and then the PR is removed using a dry method to form the pixel insulating layer. Taking tungsten as an example... Figure 13 This is a schematic diagram of the substrate structure after the third etching.
[0064] In this invention, when the conductive pillar layer is copper, the etching gas for the third etching is preferably a chlorine-containing gas, preferably Cl2 and / or BCl3; when the conductive pillar layer is tungsten, the etching gas for the third etching is preferably a fluorine-containing gas, preferably SF6 and / or CF4; the etching gas for the third etching preferably also includes PR etching ashing gas O2.
[0065] After obtaining the conductive pillar, the present invention forms an anode metal on the surface of the substrate on which the conductive pillar is obtained.
[0066] Preferably, the present invention involves a third coating on the surface of the substrate to which the conductive pillar is obtained, forming an anode metal layer, and then performing a fourth photoresist and a fourth etching sequentially on the surface of the anode metal layer to obtain the anode metal.
[0067] The present invention does not impose any particular limitation on the specific methods of the third coating, the fourth photoresist, and the fourth etching; any method well known to those skilled in the art can be used. Figure 14 This is a schematic diagram of the substrate structure after the anode metal has been formed.
[0068] After obtaining the anode metal, the present invention forms an organic light-emitting layer on the surface of the anode metal and the silicon substrate to obtain the anode of the Micro OLED display screen, more preferably by forming the organic light-emitting layer through a fourth coating.
[0069] The present invention does not impose any special limitation on the specific method of the fourth coating; any method known to those skilled in the art can be used.
[0070] The present invention also provides a low leakage current and high color gamut Micro OLED display, comprising an anode, a cathode, a coating layer (TFE), a color filter layer (CF), an adhesive, and a transparent cover plate stacked sequentially. The anode is the low leakage current and high color gamut Micro OLED display anode described in the above technical solution, and the cathode is disposed on the surface of the organic light-emitting layer; The adhesive wraps around the side of the color filter layer and is also disposed on the surface of the encapsulation layer that is not covered by the color filter layer.
[0071] Figure 17 This is a schematic diagram of the structure of the low leakage current and high color gamut Micro OLED display of the present invention.
[0072] The present invention does not impose any special limitations on the materials and dimensions of the cathode, encapsulation layer (TFE), color filter layer (CF), adhesive and transparent cover plate. Any type and size parameter known to those skilled in the art can be used. Specifically, the adhesive is preferably glue and the transparent cover plate is preferably cover glass.
[0073] In this invention, the color filter layer is composed of three primary colors: R, G, and B, and the thickness is preferably 0.8~1.4μm, specifically 0.8, 1, 1.2, or 1.4μm.
[0074] In this invention, the channel depth between the anode metal pixels exceeds that of the organic material. At this time, the organic materials are disconnected by the deep channel, forming isolated islands. When a single sub-pixel is energized, holes and electrons cannot affect the light emission of the organic materials on other sub-pixels, thereby improving the color gamut of the product after it is lit.
[0075] The present invention also provides a method for fabricating a low-leakage, high-color-gamut Micro OLED display as described in the above technical solution, comprising the following steps: A cathode and an encapsulation layer are sequentially formed by vapor deposition on the surface of the organic light-emitting layer of the anode in the low leakage current and high color gamut Micro OLED display. A color filter layer is formed on the surface of the encapsulation layer. An adhesive is applied to the surface of the color filter layer and the surface of the encapsulation layer not covered by the color filter layer. The transparent cover plate is then aligned and bonded to obtain the silicon-based Micro OLED display with low leakage current and high color gamut.
[0076] In this invention, an organic light-emitting layer is deposited on the surface of the anode of the low-leakage, high-color-gamut Micro OLED display to sequentially form a cathode and an encapsulation layer. Figure 15 This is a schematic diagram of the substrate structure after the encapsulation layer has been formed.
[0077] After obtaining the encapsulation layer, the present invention preferably performs photoresist coating, exposure and development in sequence to form the color filter layer. Figure 16 This is a schematic diagram of the substrate structure after the color filter layer (color film) has been formed.
[0078] After forming the color filter layer, the present invention preferably applies adhesive to the surface of the color filter layer and the surface of the encapsulation layer not covered by the color filter layer, and aligns and adheres the cover glass to the substrate, thus forming the low-leakage, high-color-gamut Micro OLED display. Figure 17 The structure shown is a low-leakage, high-color-gamut Micro OLED display.
[0079] Figures 3-17 The silicon substrates used in this example are all CMOS substrates.
[0080] The technical solutions of this invention will be clearly and completely described below with reference to the embodiments thereof. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.
[0081] Example 1 Fabricating a Micro OLED display with low leakage current and high color gamut includes the following steps: On a CMOS substrate with through-holes, a non-conductive insulating film (silicon dioxide) with a thickness of 100 nm is deposited. The coated substrate is fed into a coating machine, and photoresist PR is evenly coated on the surface of a non-conductive insulating film with a thickness of 1μm. The substrate coated with photoresist is fed into a photolithography machine. A photomask is used to expose the PR (photoresist) areas that do not need to remain on the surface to UV light during the exposure process, while the areas that need to remain on the substrate surface are shielded. The exposure energy is 200 J / m². 2 ; The photoresist in the exposed area is washed away in the developer with a TMAH developer solution with a mass concentration of 2.38%, thereby leaving the desired pattern on the substrate surface. The development time is 100 seconds. After development, the substrate is fed into a dry etching equipment. The non-conductive insulating film not protected by PR is first etched away by the etching gas, and then the PR is removed by dry method to form the pixel insulating layer substrate. The etching gas for silicon dioxide is a mixture of CHF3 and CF4, and the PR etching ashing gas is O2. On a substrate where the pixel insulating layer fabrication process has been completed, a PR pattern for pixel insulating layer vias is created through a process of applying adhesive, exposure, and development. The positions of the pixel insulating layer vias correspond one-to-one with the positions of the vias on the CMOS substrate, and the width of the pixel insulating layer vias is consistent with the size of the vias on the CMOS substrate. The thickness of the pixel insulating layer via PR is 2μm. After development, the substrate is transferred into a dry etching equipment. The non-conductive insulating film not protected by PR is first etched away by the corresponding etching gas, and then the PR is removed by dry method to form the pixel insulating layer via. The etching gas for silicon dioxide is a mixture of CHF3 and CF4, and the PR etching ashing gas is O2. On the substrate where the pixel insulating layer through-hole etching has been completed, a tungsten film layer with a thickness of 120nm is deposited. The substrate with the completed pixel insulating layer through-hole coating is transferred to a chemical mechanical polishing (CMP) machine, where the tungsten film layer protruding above the pixel insulating layer is polished away using CMP polishing slurry and abrasive pads. On the polished substrate, a pattern is created on the pixel insulating layer through a process of coating, exposure, and development. The pixel insulating layer and the via location are protected by PR, with a PR thickness of 2μm. After development, the substrate is fed into a dry etching equipment. The tungsten film that is not protected by PR is first etched away by etching gas, and then the PR is removed by dry etching to form the pixel insulating layer channel. The tungsten film etching gas is SF6, and the PR etching ashing gas is O2. On a substrate with tungsten metal etching completed, an anode metal pattern is fabricated through a coating, photolithography, and etching process. The anode metal is Ti-AL-Ti with a thickness of 80nm. On a substrate with an anode metal, an organic light-emitting layer (120 nm thick), a cathode (120 nm thick), and a TFE encapsulation layer (1000 nm thick) are deposited by vapor deposition. On the substrate where the TFE encapsulation layer process has been completed, a color filter (CF) with a thickness of 1.4 μm is obtained by coating, exposing, and developing. After the color filter (CF) substrate has completed the CF process, bonding adhesive is applied to the substrate, and the cover glass is then aligned and bonded to the substrate to form a layer with… Figure 17 The structure shown is a low-leakage, high-color-gamut Micro OLED display.
[0082] Comparative Example Existing technology has Figure 1 The Micro OLED display with the structure shown differs from Example 1 only in that it does not contain a pixel insulating layer and conductive pillars.
[0083] The color gamut of the Micro OLED displays in Example 1 and the comparative example was tested according to the sRGB color gamut standard. The color gamut of the Micro OLED display in Example 1 was 95%, and the color gamut of the Micro OLED display in the comparative example was 80%, which is an improvement of 18.75%.
[0084] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A low-leakage, high-color-gamut Micro OLED display anode, characterized in that, include: A silicon substrate, wherein through-holes are spaced apart; A pixel insulating layer is provided at intervals on the surface of the silicon substrate and covers the through-hole. A conductive pillar is embedded in the pixel insulating layer. The conductive pillar is connected to the metal in the through-hole and has the same size as the through-hole. Anode metal, wherein the anode metal is disposed on the surface of the pixel insulating layer; An organic light-emitting layer is disposed on the surface of the anode metal and the silicon substrate, and the organic light-emitting layer does not completely cover the side of the anode metal.
2. The anode of the Micro OLED display according to claim 1, characterized in that, The thickness of the pixel insulating layer is 30~100nm.
3. The anode of the Micro OLED display according to claim 1 or 2, characterized in that, The pixel insulating layer is made of one or more of silicon nitride, silicon dioxide, and aluminum oxide.
4. The anode of the Micro OLED display according to claim 1, characterized in that, The conductive pillar is made of metal.
5. The anode of the Micro OLED display according to claim 1 or 4, characterized in that, The height of the conductive pillar is 30~100nm and is the same as the height of the pixel insulating layer.
6. The anode of the Micro OLED display according to claim 1, characterized in that, The thickness of the anode metal is 60~200nm.
7. The anode of the Micro OLED display according to claim 1, characterized in that, The silicon substrate is a CMOS substrate.
8. The method for preparing the anode of the Micro OLED display screen according to any one of claims 1 to 6, characterized in that, Includes the following steps: A first film is deposited on the surface of a silicon substrate to form a non-conductive insulating film. A first photolithography and a first etching are then performed on the surface of the non-conductive insulating film to obtain a pixel insulating layer. A second photolithography and a second etching are performed sequentially on the surface of the pixel insulating layer to form a through-hole in the pixel insulating layer. A second coating, polishing, a third photolithography, and a third etching are performed sequentially on the surface of the obtained substrate, and a conductive pillar is formed inside the through-hole in the pixel insulating layer. An anode metal is formed on the surface of the substrate from which the conductive pillar is obtained; An organic light-emitting layer is formed on the surface of the anode metal and the silicon substrate to obtain the anode of the Micro OLED display.
9. The preparation method according to claim 8, characterized in that, The thickness of the conductive pillar layer is 40~120nm.
10. A Micro OLED display with low leakage current and high color gamut, characterized in that, It includes an anode, a cathode, an encapsulation layer, a color filter layer, an adhesive, and a transparent cover plate stacked in sequence. The anode is the low leakage current and high color gamut Micro OLED display anode as described in any one of claims 1 to 7, and the cathode is disposed on the surface of the organic light-emitting layer; The adhesive wraps around the side of the color filter layer and is also disposed on the surface of the encapsulation layer that is not covered by the color filter layer.