Individual grating fabrication and assembly

Abstract

The present disclosure generally provides a waveguide combiner and a method thereof. The method includes forming a waveguide combiner by disposing a first grating including a first device structure over a first donor substrate. The first grating is transferred from the first donor substrate to a waveguide substrate.

Description

Technical Field

[0001] The embodiments described herein generally relate to waveguide combiners. More specifically, the embodiments described herein relate to waveguide gratings and methods for manufacturing waveguide combiners. Background Technology

[0002] Virtual reality is generally viewed as a computer-generated simulated environment in which the user has an apparent physical presence. Virtual reality experiences can be generated in 3D and viewed using head-mounted displays (HMDs), such as glasses or other wearable display devices with near-eye display panels as lenses, which display a virtual reality environment that substitutes for the actual environment.

[0003] However, augmented reality enables an experience where users can still view their surroundings through glasses or other HMD device display lenses and see images of virtual objects generated for display and appearing as part of the environment. Augmented reality can include any type of input, such as audio and haptic input, as well as virtual images, graphics, and videos that enhance or amplify the environment experienced by the user. Methods for generating augmented reality devices include generating a waveguide assembly having at least a first grating and a second grating. However, it is worth noting that conventional waveguide manufacturing processes typically involve forming gratings on a waveguide substrate, thereby limiting the ability to repair and / or replace gratings due to their integration on the waveguide substrate. Furthermore, generating gratings on the waveguide substrate increases manufacturing costs and limits the components available for unique waveguide assembly architectures.

[0004] Therefore, improved waveguide manufacturing processes are needed. Summary of the Invention

[0005] In one embodiment, this disclosure generally provides a method for forming a waveguide combiner. The method includes placing a first grating including a first device structure on a first donor substrate. The first grating is then transferred from the first donor substrate to the waveguide substrate.

[0006] In another embodiment, this disclosure generally provides a method for forming a waveguide assembly. The method includes applying a first coating on a first donor substrate. A first device structure is disposed on the first coating. The first device structure is transferred to a waveguide substrate, wherein transferring the first device structure includes inverting the first donor substrate and disposing the first device structure on the waveguide substrate.

[0007] In another embodiment, this disclosure generally provides a waveguide assembler. The waveguide assembler includes a substrate. A first grating is disposed on the substrate. The first grating includes a first device structure and a first coating disposed on the first device structure. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above, a more specific description of the present disclosure can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are therefore not intended to limit the scope of the disclosure, and other equally effective embodiments are permissible.

[0009] Figure 1 This is a flowchart of a method for forming a waveguide combiner according to certain embodiments.

[0010] Figure 2 This is a schematic front view of a waveguide combiner during a method for forming a waveguide combiner according to certain embodiments.

[0011] Figure 3A This is a perspective front view of a waveguide combiner according to the embodiments described herein.

[0012] Figure 3B This is a schematic cross-sectional view of a waveguide combiner according to the embodiments described herein.

[0013] Figure 3C This is a schematic cross-sectional view of a waveguide combiner according to the embodiments described herein.

[0014] Figure 4 This is a flowchart of a method for forming a waveguide combiner according to certain embodiments.

[0015] Figures 5A to 5M This is a schematic cross-sectional view of a portion of the device material during a method for forming a waveguide combiner, according to certain embodiments.

[0016] Figure 6 This is a flowchart of a method for forming a waveguide combiner according to certain embodiments.

[0017] Figures 7A to 7J This is a schematic cross-sectional view of a portion of the device material during a method for forming a waveguide combiner, according to certain embodiments.

[0018] Figure 8A and Figure 8B This is a schematic front view of a first donor substrate according to the embodiments described herein.

[0019] Figure 9A and Figure 9B This is a schematic front view of a second donor substrate according to the embodiments described herein.

[0020] Figure 10A and Figure 10B This is a schematic front view of a third donor substrate according to the embodiments described herein.

[0021] For ease of understanding, the same reference numerals are used to denote common elements in the figures where possible. Elements disclosed in one embodiment are intended to be advantageously used in other embodiments without particular description. Detailed Implementation

[0022] The embodiments described herein generally relate to optical devices. More specifically, the embodiments described herein relate to waveguide assemblies and methods for manufacturing and assembling waveguide assemblies. In various embodiments, techniques are provided for manufacturing waveguide assemblies by bonding a first grating from a first donor substrate (e.g., silicon) and a second grating from a second donor substrate (e.g., silicon) to a waveguide substrate (e.g., glass), thereby allowing for efficient waveguide processing. By individually bonding the first grating from the first donor substrate to the waveguide substrate, manufacturing time and costs are reduced. Furthermore, individually bonding the first grating from the first donor substrate to the waveguide substrate allows for the formation of complex waveguide assemblies and / or non-standard waveguide assemblies, thereby allowing for the formation of unique waveguide assembly component architectures. This disclosure allows for higher yield waveguide manufacturing and the use of dedicated carrier substrates to produce bent waveguide devices. Additionally, manufacturing costs can be reduced through individualized repair processes, wherein the first grating of the waveguide assembly can be repaired without replacing the entire waveguide assembly. Although this disclosure describes a first grating, a second grating, and a third grating, any number of gratings may be mounted on the waveguide combiner.

[0023] Figure 1 This is a flowchart of a method 100 for forming a waveguide combiner 200. Figure 2 The portion of the waveguide combiner corresponding to method 100 is shown. At operation 102, as... Figure 2 As shown, a first grating 204a is mounted on a first applicant substrate 208. In some embodiments, a plurality of first gratings are mounted on the first applicant substrate 208. Each of the plurality of first gratings 204a includes a first device structure, as described below. Figures 3A to 3CThe first grating 204a is disposed by depositing a device material on a first substrate 208. The device material is then patterned to form the first grating 204a. The first grating 204a can be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). Patterning processes for forming the first grating 204a include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof. Although Figure 2 The first grating 204a, the second grating 204b, and the third grating 204c are shown, but the waveguide combiner of this disclosure may include only a single grating, such as only the first grating 204a, only the second grating 204b, only the third grating 204c, and / or combinations thereof.

[0024] At operation 104, such as Figure 2 As shown, the first grating 204a is transferred to the waveguide substrate 201. In some embodiments, a transfer substrate can be used to transfer the first grating 204a from the first substrate 208 to the waveguide substrate 201, as referenced herein. Figures 7A to 7J In some embodiments, the first grating 204a can be transferred to the waveguide substrate 201 by cutting the first grating 204a from the self-adhesive substrate and inverting the first grating 204a onto the top surface of the waveguide substrate 201. Depending on the application, an adhesive layer can be placed between the first grating 204a and the substrate 201 to improve the adhesion between them. In some embodiments, the waveguide substrate 201 can be surface-treated, for example by chemical processing or plasma processing, to enhance the adhesion between the first grating 204a and the substrate 201.

[0025] Depending on the situation, such as Figure 2 As shown, a second grating 204b is disposed on a second donor substrate 212. The second grating 204b may be different from the first grating 204a. The second grating 204b may be the same as the first grating 204a. In some embodiments that can be combined with other embodiments, the first donor substrate 208 and the second donor substrate 212 may be the same or different. In some embodiments, the second donor substrate 212 is a waveguide substrate 201. In some embodiments that can be combined with other embodiments, a plurality of second gratings 204b may be disposed on the second donor substrate 212 and / or the waveguide substrate 201. Each of the plurality of second gratings 204b includes a second device structure, as referenced herein. Figures 3A to 3CThe second grating 204b is disposed by depositing a device material on the second donor substrate 212 and / or the waveguide substrate 201. The device material is then patterned to form the second grating 204b. The second grating 204b can be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). Patterning processes for forming the second grating 204b include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof.

[0026] Depending on the situation, such as Figure 2 As shown, a plurality of third gratings 204c are disposed on a third donor substrate 216 and / or a waveguide substrate 201. The third gratings 204c may be different from the first grating 204a and / or the second grating 205b. The third gratings 204c may be the same as the first grating 204a and / or the second grating 204b. In some embodiments that can be combined with other embodiments, the first donor substrate 208, the second donor substrate 212, and the third donor substrate 216 may be the same or different. Each of the plurality of third gratings 204c includes a third device structure 206c. The third gratings 204c are disposed by depositing device material on the third donor substrate 216. The device material is then patterned to form the third gratings 204c. The third gratings 204c may be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). The patterning process for forming the third grating 204c includes, but is not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or a combination thereof.

[0027] Depending on the situation, such as Figure 2 As shown, the second grating 204b is transferred to the waveguide substrate 201, for example, when the second grating 204b is not the waveguide substrate 201. In some embodiments, a transfer substrate can be used to transfer the second grating 204b from the second donor substrate 212 to the waveguide substrate 201, as referenced herein. Figures 7A to 7J In some embodiments, the second grating 204b can be transferred to the waveguide substrate 201 by cutting the second grating 204b from the second substrate 212 and inverting the second grating 204b onto the top surface of the waveguide substrate 201. Depending on the application, an adhesive layer can be placed between the second grating 204b and the substrate 201 to improve the adhesion between them.

[0028] Depending on the situation, such as Figure 2 As shown, the third grating 204c is transferred to the waveguide substrate 201. In some embodiments, a transfer substrate can be used to transfer the third grating 204c from the third donor substrate 216 to the waveguide substrate 201, as referenced herein. Figures 7A to 7JIn some embodiments, the third grating 204c can be transferred to the waveguide substrate 201 by cutting the third grating 204c from the third substrate 216 and inverting the third grating 204c onto the top surface of the waveguide substrate 201. Depending on the application, an adhesive layer can be placed between the third grating 204c and the substrate 201 to improve the adhesion between them.

[0029] Depending on the application, the packaging layer may be disposed on the first grating 204a, the second grating 204b, the third grating 204c, and / or the substrate 201. One or more plasma-based vapor deposition processes (such as PVD or sputtering, furnace CVD (FCVD), PE-CVD, PE-ALD, or other plasma processes) may be used to form the packaging layer. Depending on the application, one or more additional processes may be performed after packaging, such as grinding, dicing, edge blackening, or combinations thereof.

[0030] Figure 3A A perspective front view of the waveguide combiner 300 is illustrated. It should be understood that the waveguide combiner 300 described herein is an exemplary waveguide combiner. The waveguide combiner 300 is an augmented reality waveguide combiner. The waveguide combiner 300 includes a plurality of device structures 302 disposed on a substrate 201 (e.g., a waveguide substrate). Although Figure 3A Multiple device structures are shown mounted only on the top surface of the waveguide assembler 300, but these multiple device structures can be independently mounted on the top or bottom side of the waveguide assembler 300. The substrate 201 can have varying shapes, thicknesses, and diameters. For example, the substrate 201 can have a diameter of approximately 50 mm to approximately 500 mm. The substrate 201 can have a circular, rectangular, or square shape. The substrate 201 can have a thickness between approximately 300 μm and approximately 1 mm.

[0031] The substrate 201 can be any substrate used in the art and can be opaque or transparent to light of a selected wavelength, depending on its intended use as a substrate for a waveguide. Substrate selection can include substrates of any suitable material, including but not limited to amorphous dielectrics, non-amorphous dielectrics, crystalline dielectrics, polymers, or combinations thereof. In some embodiments, the substrate 201 includes, but is not limited to: silicon-containing materials, silicon and oxygen-containing compounds, germanium-containing materials, indium and phosphide-containing compounds, gallium and arsenic-containing compounds, gallium and nitrogen-containing compounds, carbon-containing materials, silicon and carbon-containing compounds, silicon, carbon and oxygen-containing compounds, silicon and nitrogen-containing compounds, silicon, oxygen and nitrogen-containing compounds, niobium and oxygen-containing compounds, lithium, niobium and oxygen-containing compounds, aluminum and oxygen-containing compounds, indium, tin and oxygen-containing compounds, titanium and oxygen-containing compounds, lanthanum and oxygen-containing compounds, gadolinium and oxygen-containing compounds, zinc and oxygen-containing compounds, yttrium and oxygen-containing compounds, tungsten and oxygen-containing compounds, potassium and oxygen-containing compounds, phosphorus and oxygen-containing compounds, barium and oxygen-containing compounds, sodium and oxygen-containing compounds, or combinations thereof. In other embodiments that can be combined with other embodiments described herein, substrate 201 includes an oxide comprising one or more of a material containing gadolinium, silicon, sodium, barium, potassium, tungsten, phosphorus, zinc, calcium, titanium, tantalum, niobium, lanthanum, zirconium, lithium, or yttrium. Examples of substrate 201 materials include silicon (Si), silicon monoxide (SiO), silicon dioxide (SiO2), silicon carbide (SiC), fused silica, diamond, germanium quartz (Ge), silicon germanium (SiGe), indium phosphide (InP), gallium arsenide (GaAs), gallium nitride (GaN), sapphire, sapphire (Al2O3), lithium niobate (LiNbO3), indium tin oxide (ITO), lanthanum oxide (La2O3), gadolinium oxide (Gd2O5), zinc oxide (ZnO), yttrium oxide (Y2O3), tungsten oxide (WO3), titanium oxide (TiO2), zirconium oxide (ZrO3), sodium oxide (Na2O), niobium oxide (Nb2O5), barium oxide (BaO), potassium oxide (K2O), phosphorus pentoxide (P2O5), calcium oxide (CaO), or combinations thereof.

[0032] The device structure 302 may be a nanostructure with submicron dimensions, such as nanometer-sized dimensions, like a critical size less than 1 μm. A region of the device structure 302 may correspond to one or more gratings 204, such as a first grating 204a, a second grating 204b, and a third grating 204c. The waveguide combiner 300 includes at least a first grating 304a corresponding to the input coupling grating and a third grating 304c corresponding to the output coupling grating. The waveguide combiner 200 may include a second grating 304b corresponding to an intermediate grating.

[0033] The first grating 204a has a first device structure 306a. Although only nine first device structures 306a are shown on the substrate 201, any number of first device structures 306a can be mounted on the substrate 201. The second grating 204b has a second device structure 306b. Although only twenty-six second device structures are shown on the substrate 201, any number of second device structures 306b can be mounted on the substrate 201. The third grating 204c has a third device structure 306c. Although only fourteen third device structures are shown on the substrate 201, any number of third device structures 306c can be mounted on the substrate 201.

[0034] The device structure 302 and the substrate 201 may include different materials. The substrate 201 includes, but is not limited to, one or more oxides, carbides or nitrides of silicon, aluminum, zirconium, tin, tantalum, zirconium, barium, titanium, hafnium, lithium, lanthanum, cadmium, niobium, or combinations thereof. Examples of materials for the device structure 302 include silicon carbide, silicon oxycarbide, titanium oxide, silicon oxide, vanadium oxide, aluminum oxide, aluminum-doped zinc oxide, indium tin oxide, tin oxide, zinc oxide, tantalum oxide, silicon nitride, zirconium oxide, niobium oxide, cadmium stannate, silicon oxynitride, barium titanate, cobalt-like carbon, hafnium oxide, lithium niobate, silicon carbonitride, silver, cadmium selenide, mercury telluride, zinc selenide, silver-indium-gallium-sulfur, silver-indium-sulfur, indium phosphide, gallium phosphide, lead sulfide, lead selenide, zinc sulfide, molybdenum sulfide, tungsten sulfide, or combinations thereof.

[0035] Figure 3B This is a schematic cross-sectional view of the waveguide combiner 300. The first device structure 306a, the second device structure 306b, and the third device structure 306c may independently include a generally vertical device structure, a binary device structure, a blazed device structure, a stepped device structure, or a combination thereof. A coating 320 is disposed on the device structure 302 (e.g., the first device structure 306a, the second device structure 306b, and the third device structure 306c). The coating 320 may include one or more of a silicon-based material, a silicon nitride-based material, an aluminum-based material, or a combination thereof. In some embodiments, the coating 320 may be disposed between the device structure 302 (e.g., the first device structure 306a, the second device structure 306b, and the third device structure 306c) and the substrate 201. The coating 320 disposed between the device structure 302 and the substrate 201 may couple and / or bond the device structure 302 to the substrate 201.

[0036] In an embodiment, coating 320 may comprise a single layer, or coating 320 may be a single layer (not shown) wrapped around substrate 201 to coat the top and bottom of substrate 201.

[0037] Or, such as Figure 3CAs shown, an adhesive layer 324 is disposed between the device structure 302 (e.g., the first device structure 306a, the second device structure 306b, and the third device structure 306c) and the substrate 201. The adhesive layer 324 may comprise a material with a refractive index of about 1.0 to about 1.8. In some embodiments that can be combined with other embodiments, the adhesive layer 324 may comprise an aerogel material, an epoxy resin material, or a generally transparent material suitable for bonding the device structure 302 to the substrate 201. The adhesive layer 324 disposed between the device structure 302 and the substrate 201 can couple and / or bond the device structure 302 to the substrate 201.

[0038] Depending on the application, the donor substrate 322 is disposed on the coating 320. The donor substrate 322 may include a substrate of any suitable material, including but not limited to amorphous dielectrics, non-amorphous dielectrics, crystalline dielectrics, polymers, or combinations thereof. In some embodiments, the donor substrate 322 includes, but is not limited to, silicon-containing materials, silicon- and oxygen-containing compounds, germanium-containing materials, indium- and phosphide-containing compounds, gallium- and arsenic-containing compounds, gallium- and nitrogen-containing compounds, carbon-containing materials, silicon- and carbon-containing compounds, silicon-, carbon- and oxygen-containing compounds, silicon- and nitrogen-containing compounds, silicon-, oxygen- and nitrogen-containing compounds, niobium- and oxygen-containing compounds, lithium-, niobium- and oxygen-containing compounds, aluminum- and oxygen-containing compounds, indium-, tin- and oxygen-containing compounds, lanthanum- and oxygen-containing compounds, gadolinium- and oxygen-containing compounds, zinc- and oxygen-containing compounds, yttrium- and oxygen-containing compounds, tungsten- and oxygen-containing compounds, potassium- and oxygen-containing compounds, phosphorus- and oxygen-containing compounds, barium- and oxygen-containing compounds, sodium- and oxygen-containing compounds, or combinations thereof. For example, the donor substrate 322 may include silicon.

[0039] The packaging layer 326 is disposed on the first device structure 306a of the first grating 204a, the second device structure 306b of the second grating 204b, and the third device structure 306c of the third grating 204c. The packaging layer 326 includes, but is not limited to, aluminum, silver, gold, chromium, silicon nitride, silicon oxide, or combinations thereof. Examples of the packaging layer 326 include silicon dioxide, aluminum oxide, magnesium oxide, or combinations thereof. The packaging layer 326 can be formed using one or more plasma-based vapor deposition processes (such as PVD or sputtering processes), furnace CVD (FCVD) processes, PE-CVD processes, PE-ALD processes, or other plasma processes.

[0040] In one or more instances, the packaging layer 326 can be deposited via a PVD process that includes generating ozone or oxygen plasma while depositing the packaging layer 326. For example, silver can be deposited in a magnetron sputtering PVD chamber using a silicon target via reactive deposition using a plasma containing argon and oxygen (Ar / O2). The packaging layer 326 can have a thickness of about 10 nm to about 200 nm or greater.

[0041] Depending on the circumstances, substrate 201 may include a curved substrate. The curved substrate may include a substrate having one or more bends, curves, or combinations thereof. Due to the individualized fabrication of the waveguide, the methods described herein may allow the use of the curved substrate, for example, to individually mount an ingress coupler grating, a pupil dimmer grating, or an egress coupler grating on the curved substrate.

[0042] Figure 4 This is a flowchart of a method 400 for forming a waveguide combiner 300. Figures 5A to 5M A portion of the device structure 302 is shown. In one embodiment, the device structure 302 includes oxygen-containing silicon carbide (SiOC), titanium dioxide (TiO2), silicon dioxide (SiO2), and vanadium oxide (IV) (VO2). x It is at least one of the following materials: aluminum oxide (Al2O3), indium tin oxide (ITO), zinc oxide (ZnO), tantalum pentoxide (Ta2O5), silicon nitride (Si3N4), titanium nitride (TiN), and zirconium dioxide (ZrO2).

[0043] At operation 402, such as Figure 5A As shown, a first coating 502 is disposed on a first donor substrate 208. The first coating 502 may include coating 320 as described herein. For example, the first coating 502 may include one or more of a silicon-based material, a silicon nitride-based material, an aluminum-based material, or a combination thereof. The first donor substrate 208 may include donor substrate 322 as described herein. For example, the first donor substrate 208 may include silicon-containing materials, silicon- and oxygen-containing compounds, germanium-containing materials, indium- and phosphide-containing compounds, gallium- and arsenic-containing compounds, gallium- and nitrogen-containing compounds, carbon-containing materials, silicon- and carbon-containing compounds, silicon-, carbon- and oxygen-containing compounds, silicon- and nitrogen-containing compounds, silicon-, oxygen- and nitrogen-containing compounds, niobium- and oxygen-containing compounds, lithium-, niobium- and oxygen-containing compounds, aluminum- and oxygen-containing compounds, indium-, tin- and oxygen-containing compounds, titanium- and oxygen-containing compounds, lanthanum- and oxygen-containing compounds, gadolinium- and oxygen-containing compounds, zinc- and oxygen-containing compounds, yttrium- and oxygen-containing compounds, tungsten- and oxygen-containing compounds, potassium- and oxygen-containing compounds, phosphorus- and oxygen-containing compounds, barium- and oxygen-containing compounds, sodium- and oxygen-containing compounds, or combinations thereof. The first coating 502 may be disposed on the first donor substrate 208 using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof).

[0044] At operation 404, such as Figure 5BAs shown, a first device structure 306a is disposed on a first coating 502. The first device structure 306a is disposed by depositing device material on a portion of the first substrate 504. The device material is then patterned to form the first device structure 306a. The device material can be deposited using one or more deposition processes, such as chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof. Depending on the circumstances, such as... Figure 5C As shown, a first coating 502 is deposited again, such that the first coating 502 is disposed between the first device structures 306a. Patterning processes for forming the first device structure 306a include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof. In some embodiments that can be combined with other embodiments, the first coating 502 may be disposed on the top surface of the first device structure 306a. The first coating 502 disposed on the top surface of the first device structure 306a can enhance the adhesion between the substrate 201 and the first device structure 306a.

[0045] At operation 406, such as Figure 5D As shown, a second coating 506 is disposed on a second donor substrate 212. The second coating 506 may include coating 320 as described herein. For example, the second coating 506 may include one or more of a silicon-based material, a silicon nitride-based material, an aluminum-based material, or a combination thereof. The second donor substrate 508 may include donor substrate 322 as described herein. For example, the second donor substrate 212 may include silicon-containing materials, silicon- and oxygen-containing compounds, germanium-containing materials, indium- and phosphide-containing compounds, gallium- and arsenic-containing compounds, gallium- and nitrogen-containing compounds, carbon-containing materials, silicon- and carbon-containing compounds, silicon-, carbon- and oxygen-containing compounds, silicon- and nitrogen-containing compounds, silicon-, oxygen- and nitrogen-containing compounds, niobium- and oxygen-containing compounds, lithium-, niobium- and oxygen-containing compounds, aluminum- and oxygen-containing compounds, indium-, tin- and oxygen-containing compounds, titanium- and oxygen-containing compounds, lanthanum- and oxygen-containing compounds, gadolinium- and oxygen-containing compounds, zinc- and oxygen-containing compounds, yttrium- and oxygen-containing compounds, tungsten- and oxygen-containing compounds, potassium- and oxygen-containing compounds, phosphorus- and oxygen-containing compounds, barium- and oxygen-containing compounds, sodium- and oxygen-containing compounds, or combinations thereof. The second coating 506 may be disposed on the second donor substrate 212 using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof).

[0046] At operation 408, such as Figure 5EAs shown, a second device structure 306b is disposed on a second coating 506. The second device structure 306b is disposed by depositing device material on a portion of the second substrate 212. The device material is then patterned to form the second device structure 306b. The device material can be deposited using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or a combination thereof). Depending on the circumstances, such as... Figure 5F As shown, a second coating 506 is deposited again, such that the second coating 506 is disposed between the second device structures 306b. Patterning processes for forming the second device structure 306b include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof. In some embodiments that can be combined with other embodiments, the second coating 506 may be disposed on the top surface of the second device structure 306b. The second coating 506 disposed on the top surface of the second device structure 306b can enhance the adhesion between the substrate 201 and the second device structure 306b.

[0047] At operation 410, such as Figure 5G As shown, a third coating 510 is disposed on a third donor substrate 216. The third coating 510 may include coating 320 as described herein. For example, the third coating 510 may include one or more of a silicon-based material, a silicon nitride-based material, an aluminum-based material, or a combination thereof. The third donor substrate 512 may include donor substrate 322 as described herein. For example, the third donor substrate 512 may include silicon-containing materials, silicon- and oxygen-containing compounds, germanium-containing materials, indium- and phosphide-containing compounds, gallium- and arsenic-containing compounds, gallium- and nitrogen-containing compounds, carbon-containing materials, silicon- and carbon-containing compounds, silicon-, carbon- and oxygen-containing compounds, silicon- and nitrogen-containing compounds, silicon-, oxygen- and nitrogen-containing compounds, niobium- and oxygen-containing compounds, lithium-, niobium- and oxygen-containing compounds, aluminum- and oxygen-containing compounds, indium-, tin- and oxygen-containing compounds, titanium- and oxygen-containing compounds, lanthanum- and oxygen-containing compounds, gadolinium- and oxygen-containing compounds, zinc- and oxygen-containing compounds, yttrium- and oxygen-containing compounds, tungsten- and oxygen-containing compounds, potassium- and oxygen-containing compounds, phosphorus- and oxygen-containing compounds, barium- and oxygen-containing compounds, sodium- and oxygen-containing compounds, or combinations thereof. The third coating 510 may be disposed on the third donor substrate 216 using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof).

[0048] At operation 412, such as Figure 5HAs shown, a third device structure 306c is disposed on a third coating 510. The third device structure 306c is disposed by depositing device material on a portion of the third substrate 216. The device material is then patterned to form the third device structure 306c. The device material can be deposited using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or a combination thereof). Depending on the circumstances, such as... Figure 5I As shown, a third coating 510 is deposited again, such that the third coating 510 is disposed between the third device structures 306c. Patterning processes for forming the third device structure 306c include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof. In some embodiments that can be combined with other embodiments, the third coating 510 may be disposed on the top surface of the third device structure 306c. The third coating 510 disposed on the top surface of the third device structure 306c can enhance the adhesion between the substrate 201 and the third device structure 306c.

[0049] At operation 414, such as Figure 5J As shown, a first device structure 306a is disposed on a substrate 201. In some embodiments, a first substrate 208 is inverted and the first device structure 306a is disposed on the top surface of the substrate 201. Depending on the embodiment, a first adhesive layer 514 is disposed between the first coating 502 and the substrate 201. The first adhesive layer 514 may include any of the adhesive layers 324 described herein. For example, the first adhesive layer 514 may include a material with a refractive index of about 1.0 to about 1.8. As another example, the first adhesive layer 514 may include an aerogel material, an epoxy resin material, or a generally transparent material suitable for bonding the first device structure 306a and / or the first coating 502 to the substrate 201. The first adhesive layer 514 is disposed between the first coating 502 or the first device structure 306a and the substrate 201 such that the first adhesive layer 514 can couple and / or bond the first device structure 306a or the first coating 502 to the substrate 201.

[0050] At operation 416, such as Figure 5KAs shown, the second device structure 306b is disposed above the substrate 201. In some embodiments, the second donor substrate 508 is inverted and the second device structure 306b is disposed on the top surface of the substrate 201. Depending on the embodiment, a second adhesive layer 516 is disposed between the second coating 506 and the substrate 201. The second adhesive layer 516 may include any of the adhesive layers 324 described herein. For example, the second adhesive layer 516 may include a material with a refractive index of about 1.0 to about 1.8. As another example, the second adhesive layer 516 may include an aerogel material, an epoxy resin material, or a generally transparent material suitable for bonding the second device structure 306b and / or the second coating 506 to the substrate 201. The second adhesive layer 516 is disposed between the second coating 506 or the second device structure 306b and the substrate 201 such that the second adhesive layer 516 can couple and / or bond the second device structure 306b or the second coating 506 to the substrate 201.

[0051] At operation 418, such as Figure 5L As shown, a third device structure 306c is disposed on a substrate 201. In some embodiments, a third donor substrate 216 is inverted and the third device structure 306c is disposed on the top surface of the substrate 201. Depending on the embodiment, a third adhesive layer 518 is disposed between the third coating 510 and the substrate 201. The third adhesive layer 518 may include any of the adhesive layers 324 described herein. For example, the third adhesive layer 518 may include a material with a refractive index of about 1.0 to about 1.8. As another example, the third adhesive layer 518 may include an aerogel material, an epoxy resin material, or a generally transparent material suitable for bonding the third device structure 306c and / or the third coating 510 to the substrate 201. The third adhesive layer 518 is disposed between the third coating 510 or the third device structure 306c and the substrate 201 such that the third adhesive layer 518 can couple and / or bond the second device structure 306b or the second coating 506 to the substrate 201.

[0052] At operation 420, such as Figure 5M As shown, the packaging layer 326 is disposed on the first donor substrate 208, the second donor substrate 212, and the third donor substrate 216. The packaging layer 326 can be formed using one or more plasma-based vapor deposition processes (such as PVD or sputtering, furnace CVD (FCVD), PE-CVD, PE-ALD, or other plasma processes). Depending on the application, one or more additional processes may be performed after packaging, such as grinding, dicing, edge blackening, or combinations thereof.

[0053] The waveguide combiner 300 of this disclosure can be repaired or reworked by removing the first device structure 306a, the second device structure 306b, and / or the third device structure 306c and reinstalling the same structure or installing a replacement structure of the same type as the removed structure. Similarly, the bent waveguide combiner can be repaired or reworked by removing the first device structure 306a, the second device structure 306b, and / or the third device structure 306c and reinstalling the same structure or installing a replacement structure of the same type as the removed structure.

[0054] Figure 6 This is a flowchart of a method 600 for forming a waveguide combiner 300. Figures 7A to 7J A portion of the device structure 302 is shown. In one embodiment, the device structure 302 includes oxygen-containing silicon carbide (SiOC), titanium dioxide (TiO2), silicon dioxide (SiO2), and vanadium oxide (IV) (VO2). x It is at least one of the following materials: aluminum oxide (Al2O3), indium tin oxide (ITO), zinc oxide (ZnO), tantalum pentoxide (Ta2O5), silicon nitride (Si3N4), titanium nitride (TiN), and zirconium dioxide (ZrO2).

[0055] At operation 602, such as Figure 7A As shown, a release layer 702 is disposed on the donor substrate 322. The release layer 702 may include one or more of a silicon-based material, a silicon nitride-based material, an aluminum-based material, or a combination thereof. The release layer 702 may be configured for detachment from the release layer removal and / or dissociation device structure, such that the release layer remains attached to the donor substrate 322, and the device structure detaches from or is removed from the release layer 702. The release layer 702 may be disposed on the donor substrate 322 using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or a combination thereof).

[0056] At operation 604, such as Figure 7B As shown, a first device structure 306a is disposed on a release layer 702. The first device structure 306a is disposed by depositing device material on the release layer 702. The device material is then patterned to form the first device structure 306a. The device material can be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). Patterning processes for forming the first device structure 306a include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof.

[0057] At operation 606, such as Figure 7CAs shown, a second device structure 306b is disposed on a release layer 702. The second device structure 306b is disposed by depositing device material on the release layer 702. The device material is then patterned to form a first device structure 306a. The device material can be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). Patterning processes for forming the second device structure 306b include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof.

[0058] At operation 608, such as Figure 7D As shown, a third device structure 306c is disposed on a release layer 702. The third device structure 306c is disposed by depositing device material over the release layer 702. The device material is then patterned to form the third device structure 306c. The device material can be deposited by one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof). Patterning processes for forming the first device structure 306a include, but are not limited to, nanoimprint lithography, reactive ion etching, ion beam etching, or combinations thereof.

[0059] At operation 610, such as Figure 7E As shown, coating 320 is disposed on the first device structure 306a, the second device structure 306b, and the third device structure 306c. Coating 320 may include one or more of silicon-based materials, silicon nitride-based materials, aluminum-based materials, or combinations thereof. Coating 320 may be disposed on the first device structure 306a, the second device structure 306b, and the third device structure 306c using one or more deposition processes (e.g., chemical vapor deposition, physical vapor deposition, plasma-enhanced deposition, or combinations thereof).

[0060] At operation 612, such as Figure 7F As shown, the first device structure 306a, the second device structure 306b, and the third device structure 306c are removed from the applicant substrate 322 using a transfer substrate 704. The transfer substrate 704 includes a substrate capable of adhering to and / or bonding to the coating 320. For example, the transfer substrate 704 may include a polymer and / or inorganic material having an adhesive layer. In some embodiments, the transfer substrate 704 may include a tape material. The transfer substrate 704 is in contact with the coating 320 and removes the first device structure 306a, the second device structure 306b, and / or the third device structure 306c from the release layer 702. The release layer 702 may remain adhered to and / or in contact with the applicant substrate 322.

[0061] At operation 614, such as Figure 7GAs shown, a first device structure 306a is disposed on a substrate 201. In some embodiments, a transfer substrate 704 is disposed on the substrate 201, wherein the first device structure 306a is disposed on and bonded to the substrate 201. In some embodiments, the first device structure 306a is disposed on the top surface of the substrate 201. In some embodiments, an adhesive layer is disposed between the first device structure 306a and the substrate 201. The adhesive layer may include any of the adhesive layers 324 described herein. In some embodiments, the substrate 201 may be surface-treated, for example, by a chemical treatment process or by a plasma treatment process, to enhance the adhesion between the first device structure 306a and the substrate 201.

[0062] At operation 616, such as Figure 7H As shown, a second device structure 306b is disposed on a substrate 201. In some embodiments, a transfer substrate 704 is disposed on the substrate 201, wherein the second device structure 306b is disposed on and bonded to the substrate 201. In some embodiments, the second device structure 306b is disposed on the top surface of the substrate 201. In some embodiments, an adhesive layer is disposed between the second device structure 306b and the substrate 201. The adhesive layer may include any of the adhesive layers 324 described herein. In some embodiments, the substrate 201 may be surface-treated, such as chemically treated or plasma treated, to enhance the adhesion between the second device structure 306b and the substrate 201.

[0063] At operation 618, such as Figure 7I As shown, a third device structure 306c is disposed on a substrate 201. In some embodiments, a transfer substrate 704 is disposed on the substrate 301, wherein the third device structure 306c is disposed on and bonded to the substrate 201. In some embodiments, the third device structure 306c is disposed on the top surface of the substrate 201. In some embodiments, an adhesive layer is disposed between the second device structure 306b and the substrate 201. The adhesive layer may include any of the adhesive layers 324 described herein. In some embodiments, the substrate 201 may be surface-treated, such as chemically treated or plasma treated, to enhance the adhesion between the third device structure 306c and the substrate 201.

[0064] At operation 620, such as Figure 7JAs shown, a packaging layer 326 is disposed on the coating 320 and the substrate 201. The packaging layer 326 can be formed using one or more plasma-based vapor deposition processes (such as PVD or sputtering, furnace CVD (FCVD), PE-CVD, PE-ALD, or other plasma processes). Depending on the application, one or more additional processes may be performed after packaging, such as grinding, cutting, edge blackening, or combinations thereof.

[0065] The waveguide assembler 300 of this disclosure can be repaired or reworked by removing the first device structure 306a, the second device structure 306b, and / or the third device structure 306c and reinstalling the same structure or installing a replacement structure of the same type as the removed structure. Similarly, a bent waveguide assembler can be repaired or reworked by removing the first device structure 306a, the second device structure 306b, and / or the third device structure 306c and reinstalling the same structure or installing a replacement structure of the same type as the removed structure.

[0066] In operation, the waveguide combiner 300 can be optically coupled to a light emitter (LE) and a metrology / calibration instrument. In some embodiments, the light emitter can be a microdisplay. The light emitter can project an image into a first grating 204a (e.g., an in-coupler grating) of the waveguide combiner 300, and the metrology / calibration instrument can receive light from a third grating 204c (e.g., an out-coupler grating) of the waveguide combiner 300. Measurements from the metrology / calibration instrument can be used to calibrate the light emitter so that the image emitted from the third grating 204c (e.g., the out-coupler grating) is clear. In some embodiments, the light emitter can project an image into the first grating 204a (e.g., an in-coupler grating) from the concave side of the waveguide combiner 300 in the embodiments of this disclosure. Alternatively, in the embodiments of this disclosure, the third grating 204c (e.g., the out-coupler grating) of the waveguide combiner 200 can project an image from the concave side.

[0067] Figure 8A This is a schematic diagram of an arrangement 800 of first gratings 204a (e.g., in-line coupler gratings) on an applicant substrate 322 according to an embodiment of the present disclosure. In some embodiments, about one to about 4000 first gratings 204a (e.g., in-line coupler gratings) may be formed on the applicant substrate 322. In other embodiments of the present disclosure, about one to about 500 first gratings 204a may be formed on the applicant substrate 322. Each first grating 204a may include components suitable for inclusion in a waveguide combiner (such as... Figure 3AThe waveguide combiner 300 shown may contain one or more device structures (e.g., first device structures 306a). For example, each first grating 204a may include approximately nine first device structures 306a suitable for inclusion in the waveguide combiner, such as... Figure 8B As shown. In some embodiments, each first grating 204a may have a diameter of approximately 3 mm. In some embodiments, the first grating 204a may be cut from the substrate 322 and used to fabricate a waveguide assembly, as described herein.

[0068] Figure 9B This is a schematic diagram of an arrangement 900 of second gratings 204b (e.g., pupil dilator gratings) on an applicant substrate 322 according to an embodiment of the present disclosure. In some embodiments, about one to about 150 second gratings 204b, such as pupil dilator gratings, may be formed on the applicant substrate 322. In other embodiments of the present disclosure, about one to about 100 second gratings 204b may be formed on the applicant substrate 322. Each second grating 204b may include components suitable for inclusion in a waveguide combiner (such as...). Figure 3A The waveguide combiner 300 shown may contain one or more device structures (e.g., second device structures 306b). For example, each second grating 204b may include approximately twenty-six second device structures suitable for inclusion in the waveguide combiner, such as... Figure 9B As shown. In some embodiments, the second grating 204b may be cut from the substrate 322 and used to fabricate a waveguide combiner, as described herein.

[0069] Figure 10A This is a schematic diagram of an arrangement 1000 of third gratings 204c (e.g., output coupler gratings) on an applicant substrate 322 according to an embodiment of the present disclosure. In some embodiments, about one to about 150 third gratings 204c (e.g., output coupler gratings) may be formed on the applicant substrate 322. In other embodiments of the present disclosure, about one to about 100 third gratings 204c may be formed on the applicant substrate 322. Each third grating 204c may include components suitable for inclusion in a waveguide combiner (such as... Figure 3A The waveguide combiner 300 shown may contain one or more device structures (e.g., third device structures 306c). For example, each third grating 204c may include approximately fourteen third device structures suitable for inclusion in the waveguide combiner, such as... Figure 10B As shown. In some embodiments, the third grating 204C may be cut from the substrate 322 and used to fabricate a waveguide assembly, as described herein.

[0070] In summary, this disclosure provides improved methods for manufacturing and assembling waveguide assemblies. These methods allow for efficient waveguide processing by bonding a first grating from a first donor substrate (e.g., silicon) to a substrate (e.g., glass). Due to the individualized generation of the first grating, this disclosure allows for higher yield waveguide manufacturing. Furthermore, this disclosure allows for the use of dedicated carrier substrates to generate bent waveguide devices. For example, this disclosure allows for the formation of complex waveguide assemblies and / or non-standard waveguide assemblies, thereby enabling the formation of unique waveguide assembly component architectures. Additionally, reduced manufacturing costs can be achieved through individualized repair processes, where the first grating of the waveguide assembly can be repaired without replacing the entire waveguide assembly.

[0071] While the foregoing describes embodiments of this disclosure, other and additional embodiments of this disclosure may be designed without departing from its basic scope, the scope of which is defined by the following claims.

Claims

1. A method for forming a waveguide combiner, the method comprising: A first grating, including a first device structure, is mounted on a first substrate. as well as The first grating is transferred from the first donor substrate to the waveguide substrate.

2. The method of claim 1, further comprising: A second grating, including a second device structure, is mounted on the second substrate. as well as The second grating is transferred from the second donor substrate to the waveguide substrate.

3. The method of claim 1, further comprising: A second grating, including a second device structure, is placed on the waveguide substrate.

4. The method of claim 1, further comprising: A coating is applied over the first grating.

5. The method of claim 1, wherein transferring the first grating from the first donor substrate to the waveguide substrate comprises: The first grating is transferred using a transfer substrate, wherein the transfer substrate includes an adhesive layer.

6. The method of claim 1, further comprising: A third grating, including a third device structure, is mounted on a third substrate. as well as The third grating is transferred from the third donor substrate to the waveguide substrate.

7. A method for forming a waveguide combiner, the method comprising: A first coating is applied onto a first substrate. A first device structure is placed on top of the first coating; as well as Transferring the first device structure to a waveguide substrate, wherein transferring the first device structure includes: inverting the first substrate and placing the first device structure on the waveguide substrate.

8. The method of claim 7, wherein transferring the first device structure to the waveguide substrate further comprises: An adhesive layer is placed between the first device structure and the waveguide substrate.

9. The method of claim 7, wherein transferring the first device structure to the waveguide substrate further comprises: A processing technique is performed on the surface of the waveguide substrate.

10. The method of claim 7, further comprising: A packaging layer is placed on top of the first coating.

11. The method of claim 7, further comprising: A second coating is applied on the second substrate. A second device structure is mounted on the second coating; as well as Transferring the second device structure to the waveguide substrate, wherein transferring the second device structure includes: inverting the second substrate and placing the second device structure on the waveguide substrate.

12. The method of claim 11, wherein transferring the second device structure to the waveguide substrate further comprises: An adhesive layer is placed between the second device structure and the waveguide substrate.

13. The method of claim 11, further comprising: A third coating is applied on the third donor substrate; A third device structure is mounted on the third coating layer; as well as The third device structure is transferred to the waveguide substrate, wherein the transfer of the third device structure includes: inverting the third donor substrate and placing the third device structure on the waveguide substrate.

14. The method of claim 13, wherein transferring the third device structure to the waveguide substrate further comprises: A processing technique is performed on the surface of the waveguide substrate.

15. The method of claim 13, wherein transferring the third device structure to the waveguide substrate further comprises: An adhesive layer is placed between the third device structure and the waveguide substrate.

16. A waveguide combiner, the waveguide combiner comprising: substrate; as well as A first grating, disposed on the substrate, the first grating comprising: First device structure; as well as A first coating is applied to the first device structure.

17. The waveguide combiner of claim 16, further comprising a wrapping layer disposed on the first grating.

18. The waveguide assembly of claim 16, further comprising a second grating disposed on the substrate, the second grating comprising: Second device structure; as well as The second coating is applied to the second device structure.

19. The waveguide assembler of claim 16, further comprising a third grating disposed on the substrate, the third grating comprising: The structure of the third device; as well as A third coating is disposed above the third device structure.

20. The waveguide assembly of claim 16, wherein the first coating is disposed between the first device structure and the substrate.

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