Processing method of single crystal quartz material

Abstract

The invention relates to a processing method of a single crystal quartz material. And determining a to-be-processed area in which the single crystal quartz material is easy to generate bicrystal. And the heater is used for heating the to-be-processed area on the single crystal quartz material, so that the processing difficulty of the to-be-processed area is reduced. And processing the quartz material at the heated part in the to-be-processed area by using laser.

Description

Technical Field

[0001] This invention relates to a processing method, and more particularly to a processing method for single-crystal quartz material. Background Technology

[0002] Since the etching process involves multiple steps, such as physical vapor deposition (PVD), photolithography, and dry / wet etching, using lasers can save on processes, reduce processing costs, and lower the load on the etching station compared to etching, thereby improving production efficiency.

[0003] Current methods for processing single-crystal quartz use ultrafast lasers, with wavelengths mostly between 355nm and 1064nm (UV and IR wavelengths). Quartz has a transmittance of nearly 90% for these wavelengths, requiring significantly higher energy to induce ablation on the quartz surface, leading to excessive heat accumulation. Excessive localized temperatures or temperature gradients can then cause twinning. Summary of the Invention

[0004] This invention provides a processing method for single-crystal quartz materials, which can effectively prevent the formation of twins in single-crystal quartz materials after processing.

[0005] An embodiment of the present invention provides a method for processing single-crystal quartz material, comprising the following steps: determining the processing area of ​​the single-crystal quartz material that is prone to twinning; heating the processing area on the single-crystal quartz material using a heater to reduce the processing difficulty of the processing area; and processing the single-crystal quartz material using a laser on the heated portion of the processing area.

[0006] Based on the above, in one embodiment of the present invention, the processing method of single-crystal quartz material includes using a heater to heat the area to be processed on the single-crystal quartz material, thereby reducing the processing difficulty of the area to be processed, and using a laser to process the single-crystal quartz material in the heated portion of the area to be processed. Therefore, preheating the area to be processed effectively reduces the thermal threshold that requires processing effect during processing, and can reduce heat accumulation or thermal influence, thereby reducing the processing temperature and temperature gradient. Due to the aforementioned effect of reducing processing temperature and temperature gradient, the processing method of single-crystal quartz material can further avoid the problem of twinning during processing. Attached Figure Description

[0007] Figure 1 This is a flowchart of a method for processing single-crystal quartz material according to an embodiment of the present invention.

[0008] Figure 2This is a schematic diagram of a method for processing single-crystal quartz material according to an embodiment of the present invention, in which the processing area on the single-crystal quartz material is heated by a heater, and then processed by a laser in the processing area.

[0009] Figure 3 This is a flowchart of a method for processing single-crystal quartz material according to another embodiment of the present invention.

[0010] Figure 4 In a processing method for single-crystal quartz material according to an embodiment of the present invention, after the heater has started to heat the area to be processed on the single-crystal quartz material, the laser is used to process along the path of the heater heating the area to be processed.

[0011] Figure 5 yes Figure 1 or Figure 3 Detailed flowchart of step S100.

[0012] Figure 6 yes Figure 1 or Figure 3 Detailed flowchart of step S100.

[0013] Figure 7 yes Figure 1 or Figure 3 Detailed flowchart of step S200.

[0014] Figure 8 This is a processing method for single-crystal quartz material according to another embodiment of the present invention. Figure 1 or Figure 3 Detailed flowchart of step S100.

[0015] Figure 9 This is a schematic diagram showing a specific angle or position of a crystal on a single-crystal quartz material in a processing method for a single-crystal quartz material according to an embodiment of the present invention. Detailed Implementation

[0016] Figure 1 This is a flowchart of a method for processing single-crystal quartz material according to an embodiment of the present invention. Figure 2 This is a schematic diagram illustrating a method for processing single-crystal quartz material according to an embodiment of the present invention, in which the processing area on the single-crystal quartz material is heated by a heater, and then processed using a laser in the processing area. Please refer to... Figure 1 and Figure 2An embodiment of the present invention provides a method for processing a single-crystal quartz material, comprising the following steps: Step S10, determining a processing area A on the single-crystal quartz material M that is prone to twinning. Step S100, using a heater 100 to heat the processing area A on the single-crystal quartz material M, thereby reducing the processing difficulty of the processing area A. Step S200, using a laser 200 to process the single-crystal quartz material M in the heated portion of the processing area A. The range of heating the single-crystal quartz material M using the heater 100 can be greater than or cover the processing area A. Moreover, when the workpiece includes the single-crystal quartz material M and other objects, the range of heating the single-crystal quartz material M using the heater 100 can be even greater than the entire range of the single-crystal quartz material M.

[0017] In this embodiment, the single-crystal quartz material M is, for example, α-SiO2 with a temperature T < 573°C. The heater 100 heats the processing area A in a direct / indirect or contact / non-contact manner. For example, the heater 100 can be a non-contact heater: a laser light source or an infrared heater; the heater 100 can also be a contact heater: a heating stage for supporting the single-crystal quartz material M, but the invention is not limited thereto.

[0018] In this embodiment, the processing method for single-crystal quartz material further includes the following steps. Step S300: After the heater 100 has heated the processing area A on the single-crystal quartz material M, the laser 200 is used to process the processing area A.

[0019] When the heater 100 is a laser source, the beam size of the laser beam L1 emitted by the laser source illuminating the processing area A is greater than the beam size of the laser beam L2 emitted by the laser 200 illuminating the processing area A. That is, the laser beam L1 emitted by the laser source is focused solely on the heating of the processing area A, and it is necessary to avoid excessively high temperatures or temperature gradients that could cause twinning during the heating process. Therefore, the beam size of beam L1 illuminating the processing area A is greater than the beam size of beam L2 illuminating the processing area A. Furthermore, the wavelength of the laser beam L1 emitted by the laser source can be the same as the wavelength of the laser beam L2 emitted by the laser 200. However, in a preferred embodiment, the wavelength of the laser beam L1 emitted by the laser source is different from the wavelength of the laser beam L2 emitted by the laser 200.

[0020] Figure 3 This is a flowchart of a method for processing single-crystal quartz material according to another embodiment of the present invention. Figure 4 In a processing method for single-crystal quartz material according to an embodiment of the present invention, after the heater has started heating the area to be processed on the single-crystal quartz material, the laser is used to process the material along the path of the heater heating the area to be processed. Please refer to... Figure 3 and Figure 4In this embodiment, the processing method of single-crystal quartz material further includes the following steps. Step S300': After the heater 100 has started to heat the processing area A on the single-crystal quartz material M, the laser 200 is then used to process the material along the heating path of the heater 100 in the processing area A.

[0021] Figure 5 yes Figure 1 or Figure 3 A detailed flowchart of step S100 is provided. Please refer to it. Figure 5 In this embodiment, step S100 includes the following steps. Step S120: During the process of heating the processing area A on the single-crystal quartz material M by the heater 100, the energy applied to the processing area A by the heater 100 is controlled so that the temperature gradient of the processing area A is less than or equal to the upper limit of the temperature gradient.

[0022] Figure 6 yes Figure 1 or Figure 3 A detailed flowchart of step S100 is provided. Please refer to it. Figure 6 In this embodiment, step S100 further includes the following step. Step S140: During the process of heating the processing area A on the single-crystal quartz material M by the heater 100, the accumulated energy applied to the processing area A by the heater 100 is controlled so that the temperature of the processing area A is less than or equal to the upper temperature limit. The upper temperature limit is, for example, 573 degrees Celsius.

[0023] In other words, by controlling the instantaneous energy and accumulated energy applied to the processing area A during the heating process, twinning of the single-crystal quartz material M can be avoided during heating.

[0024] Figure 7 yes Figure 1 or Figure 3 Detailed flowchart of step S200. Please refer to it. Figure 6 In this embodiment, step S200 further includes the following step. Step S220: During laser processing, the temperature difference between the processing position of the laser 200 and the unheated portion of the processing area A, or the processed and cooled portion, is greater than or equal to 20 degrees. That is, the heated processing position maintains a temperature difference of at least 20 degrees with other positions. Therefore, processing can be performed continuously by heating or by heating first and maintaining a temperature difference of at least 20 degrees while maintaining the temperature difference.

[0025] Figure 8 This is a processing method for single-crystal quartz material according to another embodiment of the present invention. Figure 1 or Figure 3 A detailed flowchart of step S100 is provided. Please refer to it. Figure 8In another embodiment, step S100 further includes the following step: Step S160”, the single-crystal quartz material M is heated along a specific angle and position of the crystal. That is, during the heating process, the specific angle and position that are prone to twinning are preferentially heated, which can further avoid the formation of twinning during processing.

[0026] Figure 9 This is a schematic diagram showing a specific angle or position of a crystal on a single-crystal quartz material in a processing method according to an embodiment of the present invention. Figure 9 For example, if a single-crystal quartz material M is cut using the AT cut method, a first twinning region R1, which is prone to twinning, exists at the upper left corner of region R on the XZ plane of the single-crystal quartz material M, and a second twinning region R2, which is also prone to twinning, exists at 180 degrees corresponding to the first twinning region R1. Therefore, in the above-mentioned step S160", the first twinning region R1 and the second twinning region R2 are preferentially modified. However, the present invention is not limited to the position or angle of the first twinning region R1 and the second twinning region R2. The specific angle and specific position of the crystals on the single-crystal quartz material M should be determined according to the characteristics of the single-crystal quartz material M during processing.

[0027] In summary, in one embodiment of the present invention, the processing method for single-crystal quartz material includes the following steps: The area to be processed on the single-crystal quartz material is heated using a heater, thereby reducing the processing difficulty of the area. A laser is then used to process the single-crystal quartz material in the heated portion of the area to be processed. Therefore, preheating the area to be processed effectively lowers the thermal threshold required to produce a processing effect during processing, and reduces heat accumulation or thermal effects, thereby reducing the processing temperature and temperature gradient. Due to the aforementioned reduction in processing temperature and temperature gradient, the processing method for single-crystal quartz material can further avoid the problem of twinning during processing.

Claims

1. A method for processing single-crystal quartz material, characterized in that, include: The processing area of ​​the single-crystal quartz material that is prone to twinning is determined; The area to be processed on the single-crystal quartz material is heated by a heater, which reduces the processing difficulty of the area to be processed. as well as The single-crystal quartz material is processed using a laser on the portion of the area to be processed that has already been heated.

2. The processing method for single-crystal quartz material according to claim 1, characterized in that, The step of processing the single-crystal quartz material using the laser on the heated portion of the processing area includes the following steps: During the laser processing, the temperature difference between the laser processing position and the unheated part of the area to be processed or the processed and cooled part is greater than or equal to 20 degrees.

3. The processing method for single-crystal quartz material according to claim 1, characterized in that, The heater is a laser light source, an infrared heater, or a heater stage used to support the single-crystal quartz material.

4. The processing method for single-crystal quartz material according to claim 1, characterized in that, Including: After the heater has heated the area to be processed on the single-crystal quartz material, the laser is used to process the area.

5. The processing method for single-crystal quartz material according to claim 1, characterized in that, Including: After the heater has started heating the area to be processed on the single crystal quartz material, the laser is then used to process the area along the path of the heater heating the area to be processed.

6. The processing method for single-crystal quartz material according to claim 1, characterized in that, The heater is a laser source, and the size of the beam emitted by the laser source illuminating the area to be processed is greater than the size of the beam emitted by the laser illuminating the area to be processed.

7. The processing method for single-crystal quartz material according to claim 1, characterized in that, The heater is a laser source, and the wavelength of the beam emitted by the laser source is different from the wavelength of the beam emitted by the laser.

8. The processing method for single-crystal quartz material according to claim 1, characterized in that, The step of heating the area to be processed on the single-crystal quartz material using the heater includes the following steps: During the process of heating the area to be processed on the single crystal quartz material by the heater, the energy applied to the area to be processed by the heater is controlled so that the temperature gradient of the area to be processed is less than or equal to the upper limit of the temperature gradient.

9. The processing method for single-crystal quartz material according to claim 1, characterized in that, The step of heating the area to be processed on the single-crystal quartz material using the heater includes the following steps: During the process of heating the area to be processed on the single-crystal quartz material by the heater, the cumulative energy applied to the area to be processed by the heater is controlled so that the temperature of the area to be processed is less than or equal to the upper temperature limit.

10. The processing method for single-crystal quartz material according to claim 9, characterized in that, The upper limit of the temperature is 573 degrees Celsius.

11. The processing method for single-crystal quartz material according to claim 1, characterized in that, The step of heating the area to be processed on the single-crystal quartz material using the heater includes the following steps: The single-crystal quartz material is heated at a specific angle and position along its crystal.

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