Intracranial pressure temperature detection circuit with self-heating effect compensation

Abstract

This application discloses an intracranial pressure temperature detection circuit and device with self-heating effect compensation, belonging to the technical field of medical testing equipment. The detection circuit includes a voltage divider resistor, a compensation resistor, and the internal resistance of a temperature sensor. The compensation resistor is connected in parallel with the internal resistance of the temperature sensor, reducing the current flowing through the internal resistance of the temperature sensor by shunting, thereby reducing temperature measurement deviation caused by the self-heating effect. The voltage divider resistor, the compensation resistor, and the internal resistance of the temperature sensor are connected in series to form a voltage divider circuit, jointly defining the voltage division ratio. The resistance value of the compensation resistor is configured to reduce the current flowing through the internal resistance of the temperature sensor to the temperature caused by the self-heating effect. The intracranial pressure detection device based on this circuit includes a signal processing unit for processing the output voltage to calculate the temperature value, achieving a temperature measurement of 0.01℃, suitable for medical scenarios requiring precise monitoring of intracranial pressure and temperature.

Description

Technical Field

[0001] This application relates to an intracranial pressure temperature detection circuit with self-heating effect compensation, belonging to the field of medical testing equipment technology. Background Technology

[0002] Intracranial pressure monitoring is a crucial tool in neurosurgical intensive care, playing a vital role in the diagnosis and treatment of conditions such as traumatic brain injury, cerebral hemorrhage, and brain tumors. The development of intracranial pressure monitoring technology has evolved from invasive to semi-invasive and then to non-invasive methods, with invasive intracranial pressure monitoring being widely used in clinical practice due to its high accuracy.

[0003] Temperature monitoring is also an important parameter in intracranial pressure monitoring because changes in intracranial temperature can reflect the metabolic state and pathological changes in brain tissue. Currently, simultaneous monitoring of intracranial pressure and temperature has become a clinical requirement, which necessitates monitoring equipment capable of providing accurate pressure and temperature data simultaneously.

[0004] In existing technologies, intracranial pressure detection circuits typically include a sensor chip and a compensation circuit connected to the sensor chip. For example, CN222367687U discloses an intracranial pressure detection circuit and device, wherein the sensor chip includes a first internal resistance and a second internal resistance, and the compensation circuit includes a compensation resistor. By connecting the compensation resistor in parallel across either the first or second internal resistance, the temperature drift of the sensor chip is compensated. This design allows for quick and convenient compensation for the temperature drift of the sensor chip, preventing deviations in intracranial pressure detection due to temperature drift.

[0005] In addition, CN109620200A discloses a device and method for calibrating intracranial pressure and intracranial temperature detection. The device includes a probe, a compensation circuit, a main control circuit, and a storage and display module. The probe contains independent temperature and pressure sensors, with the temperature sensor housing a thermistor. The device uses the compensation circuit to correct the resistance value of the thermistor and calibrate the resolution of the pressure sensor, thereby improving measurement accuracy and resolution.

[0006] CN212015580U discloses a multifunctional intracranial pressure (ICP) detection device, comprising an ICP detector, an ICP detection probe, and a functional expansion module. The expansion module includes a temperature sensor and a pulse sensor for collecting human body temperature and pulse information. This design expands the functionality of the ICP detection device, enabling it to simultaneously monitor multiple physiological parameters.

[0007] CN110074772A discloses a pre-calibrated intracranial pressure probe, including a sensing head, a probe tube, and an interface module. The sensing head houses a pressure-sensitive element and a temperature-sensitive element, with the temperature-sensitive element being a two-wire thermistor. This invention can provide two physiological parameters: intracranial pressure and intracranial temperature, offering more valuable monitoring data for clinical diagnosis and treatment.

[0008] However, existing intracranial pressure temperature detection circuits share a common problem: when current flows through the internal resistance of the temperature sensor, a self-heating effect occurs, causing a deviation between the acquired temperature signal and the actual temperature, thus affecting the accuracy of the measurement. This is particularly problematic in applications requiring extremely high precision, such as intracranial pressure temperature detection, where even minute temperature deviations can lead to errors in clinical judgment. Furthermore, large currents flowing through brain tissue may generate localized self-heating, not only affecting measurement accuracy but also potentially posing risks to patients.

[0009] While existing technologies employ various compensation circuits to correct temperature drift, they primarily address drift caused by changes in ambient temperature, rather than measurement deviations caused by sensor self-heating. Therefore, there is an urgent need for an intracranial pressure temperature detection circuit that can effectively reduce self-heating effects and improve the accuracy of temperature measurements. Summary of the Invention

[0010] To address the technical problems in existing technologies where self-heating caused by current flowing through the sensor's internal resistance leads to significant deviations between the acquired electrical signal and the actual value, affecting the accuracy and reliability of intracranial pressure detection devices, and the potential risks posed by self-heating when large currents flow through the brain, this paper proposes an intracranial pressure temperature detection circuit with self-heating effect compensation. Through specific circuit structure design, the self-heating effect is reduced, thereby improving the accuracy and reliability of intracranial pressure detection devices.

[0011] The technical solution adopted by this invention to solve its technical problem is: In a first aspect, this application provides an intracranial pressure temperature detection circuit with self-heating effect compensation, comprising: Voltage divider resistors, compensation resistors, and the internal resistance of the temperature sensor; The compensation resistor is connected in parallel with the internal resistance of the temperature sensor to reduce the current flowing through the internal resistance of the temperature sensor by shunting.

[0012] Preferably, the voltage divider resistor is connected in series with the parallel combination of the compensation resistor and the internal resistance of the temperature sensor to form a voltage divider circuit.

[0013] Preferably, the output voltage of the circuit is defined by the following formula based on the relationship between the input voltage and the resistance value:

[0014]

[0015] Preferably, wherein, For output voltage, R111 is the input voltage, R112 is the voltage divider resistor, R112 is the compensation resistor, and R113 is the internal resistance of the temperature sensor.

[0016] Preferably, the resistance value of the compensation resistor is configured such that the current flowing through the internal resistance of the temperature sensor is reduced to the temperature caused by the self-heating effect.

[0017] Preferably, it further includes a voltage source for providing the input voltage to the voltage divider resistor.

[0018] Preferably, the parallel equivalent resistance of the compensation resistor and the internal resistance of the temperature sensor, together with the voltage divider resistor, defines the voltage division ratio.

[0019] On the other hand, this application also provides an intracranial pressure detection device, including an intracranial pressure temperature detection circuit as described in any one of the first aspects above, the device being configured to detect intracranial pressure and temperature signals through the circuit.

[0020] Preferably, the internal resistance of the temperature sensor corresponds to that of the temperature sensor encapsulated in a metal housing, and is electrically connected to the circuit via leads.

[0021] Preferably, the circuit further includes a signal processing unit connected to the output terminal of the circuit, which processes the output voltage to calculate the temperature value.

[0022] Preferably, the device is configured to achieve temperature measurement of 0.01°C, thereby reducing self-heating based on the diversion effect.

[0023] The beneficial effects that this application can produce include: This application reduces the current flowing through the internal resistance of the temperature sensor by connecting a compensation resistor in parallel with the internal resistance of the temperature sensor, thereby significantly mitigating self-heating and improving the accuracy and reliability of the intracranial pressure detection device. Extensive temperature comparison tests have verified that the improved intracranial pressure detection device deviates from the actual temperature by approximately 0.01℃, while the previous intracranial pressure detection device had a deviation of approximately 0.03℃. This circuit improvement greatly enhances the accuracy and reliability of the device in temperature detection. Compared to existing technologies, this invention not only improves the accuracy of temperature detection but also reduces the potential safety risks associated with current flowing through the brain, representing a significant technological advancement. Attached Figure Description

[0024] Figure 1This is a schematic diagram of an intracranial pressure temperature detection circuit with self-heating effect compensation provided in one embodiment of this application. Figure label: R111 - Voltage divider resistor; R112 - Compensation resistor; R113 - Internal resistance of temperature sensor; Detailed Implementation The present application is described in detail below with reference to the embodiments, but the present application is not limited to these embodiments.

[0025] Example 1 This embodiment provides an intracranial pressure temperature detection circuit with self-heating effect compensation. The circuit includes a voltage divider resistor R111, a compensation resistor R112, and an internal resistance R113 of the temperature sensor.

[0026] In this intracranial pressure temperature detection circuit, the compensation resistor R112 is connected in parallel with the internal resistance R113 of the temperature sensor. This parallel connection reduces the current flowing through the internal resistance R113 of the temperature sensor by shunting it. This parallel connection design can effectively reduce the influence of the self-heating effect of the temperature sensor on the measurement results.

[0027] The voltage divider resistor R111, the compensation resistor R112, and the internal resistance R113 of the temperature sensor are connected in series in parallel to form a voltage divider circuit. This series-parallel structure allows the circuit to accurately convert the input voltage into the output voltage according to a certain ratio, thereby achieving precise temperature detection.

[0028] The output voltage of this circuit has a specific mathematical relationship with the input voltage and the values ​​of each resistor, which can be expressed as follows: the output voltage equals the input voltage multiplied by the equivalent parallel resistance of the compensation resistor R112 and the internal resistance R113 of the temperature sensor, divided by the sum of the voltage divider resistor R111 and the equivalent parallel resistance. This relationship ensures that the output voltage accurately reflects the resistance change of the temperature sensor, thereby achieving precise temperature measurement.

[0029] In this intracranial pressure temperature detection circuit, the resistance value of the compensation resistor R112 is carefully designed to reduce the current flowing through the internal resistance R113 of the temperature sensor to a sufficiently low level, ensuring that the temperature deviation caused by self-heating effect is less than 0.02℃. This design greatly improves the accuracy of temperature measurement, which is especially important for high-precision medical applications such as intracranial pressure monitoring.

[0030] The circuit also includes a voltage source that provides a stable input voltage to the voltage divider resistor R111. The stability of the voltage source directly affects the accuracy of the measurement results; therefore, a high-precision regulated power supply is usually selected in practical applications.

[0031] In this intracranial pressure temperature detection circuit, the parallel equivalent resistance of the compensation resistor R112 and the internal resistance R113 of the temperature sensor, together with the voltage divider resistor R111, determines the voltage division ratio of the circuit. By precisely controlling these resistance values, the measurement range and sensitivity of the circuit can be optimized to meet different clinical monitoring needs.

[0032] This intracranial pressure temperature detection circuit has a simple structure, high measurement accuracy, and strong anti-interference ability. It can provide reliable temperature data in medical monitoring equipment, providing important reference for clinical diagnosis and treatment.

[0033] Example 2 This embodiment also provides an intracranial pressure detection device, which includes an intracranial pressure temperature detection circuit with self-heating effect compensation. The specific structure of the circuit has been described in detail in Embodiment 1.

[0034] This intracranial pressure monitoring device detects intracranial pressure and temperature signals through the aforementioned circuitry. The internal resistance R113 of the temperature sensor corresponds to the temperature sensor encapsulated within the metal housing and is electrically connected to the circuit via leads. The metal housing design provides excellent physical protection and electromagnetic shielding, ensuring stable operation of the sensor in complex physiological environments.

[0035] The device also includes a signal processing unit connected to the circuit's output terminal, which processes the output voltage and calculates an accurate temperature value. The signal processing unit is capable of converting the voltage signal into a precise temperature reading based on the mathematical relationship between the output voltage and the input voltage and resistance value described in Embodiment 1.

[0036] In this intracranial pressure monitoring device, the parallel design of the compensation resistor R112 and the internal resistance R113 of the temperature sensor reduces the self-heating effect through current shunting, ensuring that the temperature measurement deviation of the device does not exceed 0.01℃. This level of accuracy is significantly better than the 0.02℃ deviation upper limit mentioned in Example 1, providing more accurate temperature data for clinical diagnosis and treatment.

[0037] This device features a compact structure, precise measurements, and strong anti-interference capabilities, making it suitable for various clinical scenarios requiring high-precision intracranial pressure and temperature monitoring. Through optimized circuit design and high-quality sensor packaging, the device can operate stably for extended periods in complex medical environments, providing healthcare professionals with reliable monitoring data.

[0038] The above description is merely a few embodiments of this application and is not intended to limit this application in any way. Although this application discloses preferred embodiments as described above, it is not intended to limit this application. Any changes or modifications made by those skilled in the art without departing from the scope of the technical solution of this application using the disclosed technical content are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A circuit for detecting intracranial pressure temperature with self-heating effect compensation, characterized in that, include: Voltage divider resistor (R111), compensation resistor (R112), and internal resistance of temperature sensor (R113). The compensation resistor (R112) is connected in parallel with the internal resistance (R113) of the temperature sensor to reduce the current flowing through the internal resistance (R113) of the temperature sensor by shunting.

2. The intracranial pressure temperature detection circuit according to claim 1, characterized in that, The voltage divider resistor (R111) is connected in series with the compensation resistor (R112) and the internal resistance of the temperature sensor (R113) in parallel to form a voltage divider circuit.

3. The intracranial pressure temperature detection circuit according to claim 1 or 2, characterized in that, The output voltage of the circuit is defined by the following formula based on the relationship between the input voltage and the resistance value: in, For output voltage, R111 is the input voltage, R112 is the voltage divider resistor, R112 is the compensation resistor, and R113 is the internal resistance of the temperature sensor.

4. The intracranial pressure temperature detection circuit according to claim 1, characterized in that, The resistance value of the compensation resistor (R112) is configured such that the current flowing through the internal resistance (R113) of the temperature sensor is reduced to the temperature caused by the self-heating effect.

5. The intracranial pressure temperature detection circuit according to claim 4, characterized in that, It also includes a voltage source for providing the input voltage to the voltage divider resistor (R111).

6. The intracranial pressure temperature detection circuit according to claim 1, characterized in that, The parallel equivalent resistance of the compensation resistor (R112) and the internal resistance of the temperature sensor (R113) together with the voltage divider resistor (R111) defines the voltage division ratio.

7. An intracranial pressure detection device, characterized in that, The device includes an intracranial pressure and temperature detection circuit as described in any one of claims 1-6, and is configured to detect intracranial pressure and temperature signals via the circuit.

8. The intracranial pressure detection device according to claim 7, characterized in that, The internal resistance (R113) of the temperature sensor corresponds to the temperature sensor encapsulated in a metal housing and is electrically connected to the circuit via leads.

9. The intracranial pressure detection device according to claim 7, characterized in that, It also includes a signal processing unit connected to the output terminal of the circuit, which is used to process the output voltage to calculate the temperature value.

10. The intracranial pressure detection device according to claim 7, characterized in that, The device is configured to achieve a temperature measurement of 0.01°C, thereby reducing self-heating based on the diversion effect.

Images