A method for fabricating a growth substrate, the growth substrate, and a mass transfer method.
By etching grooves on the second surface of the growth substrate, the chip damage caused by nitrogen release during mass transfer was solved, the product yield was improved, and a highly efficient mass transfer method was realized.
CN122094271APending Publication Date: 2026-05-26CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
- Filing Date
- 2024-11-26
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
During the mass transfer process, the amount of nitrogen released from the Micro LED chip increases, which causes the film layer to be damaged by nitrogen impact during the laser peeling process of the AR chip, affecting the product yield.
Method used
Multiple grooves of predetermined depth are etched on the second surface of the growth substrate. The groove depth is less than or equal to the substrate thickness and the lateral dimension is less than the chip size. Nitrogen gas escapes from the grooves during laser stripping to avoid damaging the chip.
Benefits of technology
It effectively releases nitrogen gas generated during laser stripping, improves product yield, and avoids damage to the chip epitaxial layer and the impact on bonding effect.
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Figure CN122094271A_ABST
Abstract
This invention relates to the field of mass transfer technology, specifically to a method for fabricating a growth substrate, the growth substrate, and the mass transfer method. Multiple independent light-emitting chips are formed on a first surface of the growth substrate. Multiple grooves of predetermined depths are etched on a second surface of the growth substrate, symmetrically arranged with respect to the first surface. The depth of the grooves is less than the thickness of the growth substrate, or the depth of the grooves is equal to the thickness of the growth substrate, and the lateral dimension of the grooves is less than the lateral dimension of the light-emitting chips. During mass transfer, a driving backplate is provided, with the side of the growth substrate containing the light-emitting chips facing the side of the driving backplate containing the metal pads. A laser is used to irradiate the corresponding grooves on the second surface of the growth substrate to dissociate the light-emitting chips at corresponding positions from the driving backplate. Gas generated during laser dissociation of the light-emitting chips will overflow from the grooves to avoid damage to the light-emitting chips, effectively improving product yield.
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