Infrared high-transmittance normal-temperature sputtered ITO film

By optimizing the room-temperature sputtering process parameters, an ITO thin film with both high infrared transmittance and excellent conductivity was prepared, solving the compatibility and transmittance problems of traditional high-temperature ITO thin film preparation for quantum dot infrared detectors, and achieving synergistic optimization of high infrared transmittance and conductivity.

CN122105315APending Publication Date: 2026-05-29NANJING UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF SCI & TECH
Filing Date
2026-02-02
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing ITO thin film preparation requires high-temperature processing, which leads to material damage and low infrared transmittance in quantum dot infrared detectors, failing to meet compatibility and performance requirements.

Method used

By optimizing the room-temperature sputtering process parameters, using a 90wt% ceramic target and a quartz glass substrate, and controlling sputtering conditions such as argon flow rate, oxygen flow rate, sputtering power, and pressure, an ITO thin film without high-temperature annealing was prepared and combined with a quantum dot infrared detector structure.

Benefits of technology

It achieves high transmittance of 40%-90% in the short-wave infrared band and more than 85% transmittance in the visible light region, with a resistivity as low as 35, making it suitable for quantum dot infrared detectors. Moreover, the fabrication process is simple and the cost is controllable.

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Abstract

The application discloses an infrared high-transmittance normal-temperature sputtered ITO film and belongs to the technical field of transparent conductive films. The ITO film is prepared by a radio frequency magnetron sputtering technology under normal temperature conditions, a ceramic target sintered by 90 wt% and 10 wt% is used as a sputtering target material, and the sputtering process parameters are optimized, so that the average transmittance of the film in the visible light region is greater than or equal to 85%, the transmittance in the short-wave infrared band (1000-2500 nm) is 40%-90%, and the resistivity is as low as 35; the film has excellent light transmittance, conductivity and short-wave infrared high-transmittance characteristics. The application does not need high-temperature deposition conditions, has a simple process and controllable cost, can be widely applied to the fields of photoelectric devices such as solar cells, near-infrared detection devices and flat panel displays, and solves the technical problems of poor near-infrared light transmittance and high-temperature preparation of traditional ITO films.
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