An inlet-outlet gas structure for a reaction chamber and a method of using the same

Abstract

The application discloses an inlet-outlet gas structure for a reaction chamber and a use method thereof, and belongs to the technical field of semiconductor equipment. The inlet-outlet gas structure comprises a quartz piece gas inlet, a quartz piece and a quartz piece baffle. The quartz gas inlet is arranged on the side wall of the reaction chamber, and is in communication with one end of the quartz piece. The other end of the quartz piece is provided with the quartz piece baffle. A plurality of air holes are arranged on the surface of the quartz piece baffle, and the plurality of air holes are used for adjusting the distribution of the inlet gas flow. An outlet pipeline is arranged between the reaction chamber and a wafer conveying port. The quartz piece gas inlet, the flow guide quartz piece and the quartz piece baffle with the adjusting air holes are arranged on the side wall of the reaction chamber, and the outlet pipeline is arranged in a matched mode, so that the complete flow path design from the directional introduction of the process gas, the active distribution adjustment to the stable discharge is realized. The problem of poor uniformity of wafer surface film deposition caused by uneven gas flow distribution of the traditional structure is solved, and the flow field quality in the reaction chamber is systematically improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor equipment technology, and particularly relates to an inlet / outlet structure for a reaction chamber and its usage method. Background Technology

[0002] With the upgrading of integrated circuits, chemical vapor deposition (CVD) thin film technology has continuously evolved and is increasingly used in integrated circuit manufacturing. Especially as semiconductors advance towards advanced processes and process nodes continue to shrink, near-stringent requirements are placed on the uniformity, density, and interface control of thin film deposition. Among numerous deposition technologies, chemical vapor deposition (CVD) and its derivatives have become an indispensable key step in front-end processes due to their excellent step coverage, high deposition rate, and superior thin film quality. However, with the increase in wafer size and the miniaturization of feature sizes, the process window is becoming increasingly narrow, and controlling the uniformity of gas flow within the reaction chamber has become one of the core factors restricting the improvement of thin film performance and yield.

[0003] In thin film deposition, especially at higher wafer temperatures, the deposition rate is often dominated by mass transport. This means that the transport rate of reactive gases to the wafer surface directly determines the film growth rate. If the gas flow distribution within the chamber is uneven, differences in the concentration of reactive gases in different areas of the wafer will occur, leading to uneven film thickness distribution. This non-uniformity is further amplified in advanced processes, affecting everything from the consistency of device electrical parameters to integration failures. Therefore, the flow state and uniformity of the gas flow are not only a hydrodynamic issue but also a critical process factor directly impacting the uniformity of thin film deposition and even the overall chip performance and reliability.

[0004] Currently, taking a certain type of RPO2 machine as an example, its quartz inlet structure adopts a traditional flared design. The process gas is excited into active plasma by a remote plasma source, then enters the deposition chamber through the quartz element, reacts on the wafer surface, and deposits a film, finally exiting from the outlets on both sides of the chamber. This design can meet the requirements in early processes or scenarios with relatively relaxed uniformity requirements, but in advanced processes that pursue ultimate uniformity, its inherent drawbacks are becoming increasingly prominent.

[0005] The flared inlet structure inherently leads to an airflow pattern characterized by high velocity at the center and low velocity at the edges. When gas enters the wide cavity from the narrow inlet, it undergoes a sudden expansion, easily forming vortices or low-velocity zones near the inlet, disrupting the stability of the airflow. Simultaneously, the outlet design on both sides of the cavity tends to create specific pressure fields and streamline distributions within the cavity, often deviating significantly from the ideal, uniform downward flow perpendicular to the wafer.

[0006] These factors combined result in an extremely uneven distribution of the reactive gas flow field entering the cavity. On the wafer, this often manifests as a typical "inverted bowl" film thickness distribution—that is, the film thickness is thinner in the central region and thicker at the edges. This unevenness not only directly reduces the process consistency of a single wafer but also challenges repeatability across wafers and batches, severely restricting capacity expansion and process stability.

[0007] Therefore, while ensuring basic process requirements, systematically optimizing the airflow uniformity within the reaction chamber has become a primary challenge for deposition equipment and process engineers. Optimization requires a multi-pronged approach: first, redesigning the inlet structure, such as using porous, dispersed inlets and optimizing the quartz component profile to improve gas diffusion angles; second, optimizing the internal structure of the chamber and the exhaust system, studying zoned air extraction or optimizing the exhaust port layout to establish a more uniform pressure and flow field. Furthermore, using computational fluid dynamics (CFD) simulation tools for flow field simulation and virtual experiments has become an important means of rapid evaluation and design optimization. Summary of the Invention

[0008] Based on the technical problems existing in the prior art, the present invention provides an inlet and outlet structure for a reaction chamber and a method of using it.

[0009] According to a first aspect of the technical solution of the present invention, an air inlet / outlet structure for a reaction chamber is provided, comprising a quartz inlet, a quartz element, and a quartz baffle. The quartz inlet is disposed on the side wall of the reaction chamber and is connected to one end of the quartz element. The other end of the quartz element is provided with a quartz baffle. The surface of the quartz baffle is provided with a plurality of air holes for adjusting the airflow distribution. An air outlet pipe is provided between the reaction chamber and the plate transfer port.

[0010] A further improvement of the present invention is that an air pump is provided inside the air outlet pipe.

[0011] A further improvement of the present invention is that the end of the quartz component with the quartz component baffle is a concave arc shape.

[0012] A further improvement of the present invention is that: the quartz component is provided with a gas channel inside, the gas channel being used to connect the quartz air inlet and the air hole on the baffle of the quartz component.

[0013] A further improvement of the present invention is that the air outlet pipe is arranged downwards.

[0014] A further improvement of the present invention is that a lamp assembly is provided above the reaction chamber.

[0015] A further improvement of the present invention is that the pore diameter is largest in the middle of the quartz baffle, and the pore diameter on the quartz baffle is inversely proportional to the distance from the middle of the quartz baffle.

[0016] A further improvement of the present invention is that the porosity in the middle of the quartz baffle is the lowest, and the porosity on the quartz baffle is proportional to the distance from the middle of the quartz baffle.

[0017] A further improvement of the present invention is that the shape of the pore is any one of the following: circular, rectangular, trapezoidal, or conical. According to a second aspect of the technical solution of the present invention, a method of using an inlet / outlet structure for a reaction chamber is provided, comprising the following steps: Step S1: Introduce the reaction gas into the quartz component through the quartz inlet located on the side wall of the reaction chamber; Step S2: The reactant gas flows through the quartz component, and the gas distribution is regulated through several pores on the surface of the quartz component baffle. Step S3: The airflow, adjusted by the quartz baffle, enters the reaction chamber and flows over the wafer surface to perform thin film deposition; Step S4: Discharge the reaction byproducts and residual gas through the gas outlet pipe.

[0018] Compared with the prior art, the above-mentioned technical solution of the present invention has the following beneficial technical effects: 1. This invention achieves a complete flow path design for process gas from directional introduction, active distribution adjustment to stable discharge by setting a quartz inlet, a flow-guiding quartz component, and a quartz baffle with adjustable air holes on the side wall of the reaction chamber, and setting an outlet pipe accordingly. This solves the problem of poor uniformity of thin film deposition on the wafer surface caused by uneven airflow distribution in traditional structures, and systematically improves the flow field quality in the reaction chamber.

[0019] 2. By adding an air pump in the exhaust pipe, this invention achieves active and controllable suction of the chamber exhaust, solving the problems of unstable flow and low efficiency when relying on natural exhaust based on pressure difference, enhancing the ability to remove process by-products, and helping to maintain chamber cleanliness and process stability.

[0020] 3. By designing the end of the quartz component with a baffle as a concave arc structure, the present invention achieves pre-diffusion and kinetic energy buffering of the gas before impacting the baffle, solves the problem of uneven distribution caused by concentrated airflow injection, and makes the gas more stable and uniformly guided to each air hole, improving the smoothness of airflow distribution and component durability.

[0021] 4. This invention achieves sealed and low-resistance gas transmission from the inlet to the distribution point by setting a dedicated gas channel inside the quartz component to connect the air inlet and the baffle air hole. This solves the problems of leakage, premixing or turbulence disturbance that may occur during gas transportation, and ensures the purity and stability of the process gas before it enters the distribution and regulation.

[0022] 5. By setting the exhaust pipe to extend downwards, this invention achieves gravity-assisted exhaust and directional flow, solving the problems of particle deposition, hot gas floating and contaminating the top components of the chamber, and exhaust turbulence affecting the flow field of the main process area during the exhaust process, thereby improving exhaust efficiency and chamber environment cleanliness.

[0023] 6. By setting up a lamp assembly above the reaction chamber, this invention achieves uniform heating of the wafer and independent control of the process temperature field, solving the problem of physical obstruction or interference of the heating source on the horizontal process airflow, and enabling the airflow field and thermal field to be optimized in synergy to jointly ensure the uniformity of thin film deposition.

[0024] 7. This invention maximizes the pore diameter in the middle of the quartz baffle and decreases the pore diameter from the center to the edge, thereby achieving spatial differential adjustment of airflow resistance through physical pore diameter gradient. This solves the problem of uneven distribution of airflow that tends to diffuse to both sides and insufficient flow in the center in traditional designs, and significantly improves the radial uniformity of airflow velocity on the wafer surface.

[0025] 8. By minimizing the pore density in the middle of the quartz baffle and increasing the pore density from the center to the edge, this invention achieves coordinated distribution control of the number of pores and the size of the pores. This solves the problem of flow rate jumps or local flow regime changes that may result from simply relying on pore size adjustment, making the airflow distribution transition smoother and further optimizing the uniformity in the two-dimensional plane. Attached Figure Description

[0026] The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention. Wherein: Figure 1 This is a schematic diagram of the gas inlet and outlet structure for a reaction chamber according to the present invention; Figure 2 This is a schematic diagram of the quartz baffle in the inlet / outlet structure of a reaction chamber according to the present invention; Figure 3 This is a schematic diagram of the quartz inlet and quartz component in the gas inlet / outlet structure of a reaction chamber according to the present invention. Figure 4 This is the first flow field diagram of the existing inlet / outlet structure at 2mm above the wafer; Figure 5 This is the second flow field diagram of the existing inlet / outlet structure at 2mm above the wafer; Figure 6This is a first flow field diagram of the gas inlet and outlet structure for a reaction chamber of the present invention, located 2 mm above the wafer. Figure 7 This is a first flow field diagram of the gas inlet and outlet structure for a reaction chamber of the present invention, located 2 mm above the wafer. Figure 8 This is a three-dimensional structural schematic diagram of an inlet / outlet gas structure for a reaction chamber according to the present invention; Figure 9 This is a three-dimensional structural diagram of the gas outlet pipe and the plate transfer port in the gas inlet and outlet structure of a reaction chamber according to the present invention. Figure 10 This is an internal structural diagram of the gas outlet pipe and the plate transfer port in the gas inlet and outlet structure of a reaction chamber according to the present invention.

[0027] The reference numerals in the attached diagram are: 1. Quartz component air inlet; 2. Quartz component; 3. Wafer; 4. Lamp assembly; 5. Transfer port; 6. Air outlet pipe; 7. Quartz component baffle; 8. Air pump. Detailed Implementation

[0028] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0029] This invention provides an inlet / outlet structure for a reaction chamber and its usage method, belonging to the field of semiconductor equipment technology. The inlet / outlet structure includes a quartz inlet, a quartz element, and a quartz baffle. The quartz inlet is located on the side wall of the reaction chamber and is connected to one end of the quartz element. The other end of the quartz element is equipped with a quartz baffle, the surface of which has several air holes for adjusting the airflow distribution. An outlet pipe is provided between the reaction chamber and the wafer transfer port. This invention, by setting a quartz inlet, a guiding quartz element, and a quartz baffle with adjusting air holes on the side wall of the reaction chamber, and providing a matching outlet pipe, realizes a complete flow path design for process gas from directional introduction, active distribution adjustment, to stable discharge. This solves the problem of poor uniformity of thin film deposition on the wafer surface caused by uneven airflow distribution in traditional structures, and systematically improves the flow field quality within the reaction chamber.

[0030] Example 1 like Figure 1-3 and Figure 8-10As shown, an inlet / outlet structure for a reaction chamber includes a quartz inlet 1, a quartz element 2, and a quartz baffle 7. The quartz inlet 1 is located on the side wall of the reaction chamber and is connected to one end of the quartz element 2. The other end of the quartz element 2 is provided with the quartz baffle 7. The surface of the quartz baffle 7 is provided with several air holes for adjusting the airflow distribution. An outlet pipe 6 is provided between the reaction chamber and the transfer port 5. The quartz inlet 1 serves as the inlet for process gas to enter the chamber, the quartz element 2 serves as the core flow channel connecting the inlet and the baffle, the quartz baffle 7 actively adjusts the airflow distribution through the specifically arranged air holes on its surface, and the outlet pipe 6 constitutes the directional discharge path for the reaction exhaust gas. Process gas flows in from the quartz inlet 1, is transported through the internal channel of the quartz component 2 to the quartz baffle 7, and is redistributed as it passes through the vent before uniformly entering the reaction chamber. After the reaction is complete, the gas is discharged from the chamber through the outlet pipe 6. This structure establishes a complete airflow loop from intake and distribution regulation to exhaust. By combining the active distribution design at the intake end with the directional discharge at the outlet end, the overall flow field uniformity within the reaction chamber is systematically improved, providing a fundamental guarantee for the uniformity of the wafer surface deposition process, while also enhancing the stability and repeatability of the process.

[0031] Specifically, such as Figure 1 and 8 As shown, the quartz inlet 1 includes a main inlet and several secondary inlets. The inner diameter of the main inlet is larger than the inner diameter of the secondary inlets. The main inlet is used to introduce plasma generated by a remote plasma source (RPS), and the secondary inlets are used to introduce gases such as hydrogen that do not require plasma dissociation. Molecular hydrogen is directly introduced into the process chamber through the secondary inlets to contact the wafer 3. Since hydrogen itself has low chemical reactivity and only weak reducing properties, it is mainly used as a carrier gas or dilution gas to regulate the total pressure and flow rate in the process chamber. In addition, during equipment debugging or process development, the secondary inlets can also be used to test the stability and sealing of the gas path (leak detection) or the uniformity of airflow. Preferably, there are two secondary inlets, which are respectively located on the upper and lower sides of the main inlet. In another embodiment, the quartz inlet 1 is not the only gas inlet. There are two smaller inlets 2 on the upper and lower sides. Inlet 1 mainly introduces plasma generated by the remote plasma source RPS on the left, while the H2 introduced through inlet 2 is injected directly into the process chamber in molecular form without plasma dissociation. It has low chemical activity and only has weak reducing properties. It is mainly used as a carrier gas or dilution gas to regulate the total pressure and flow rate of the chamber. In addition, during equipment debugging or process development, inlet 2 can also be used to test the stability and sealing of the gas path (leak detection) or the uniformity of airflow.

[0032] Specifically, an air pump 8 is installed inside the exhaust pipe 6. The air pump 8 serves as the power source for the exhaust system, actively drawing in and accelerating the discharge of process exhaust gas from the reaction chamber. After the air pump 8 starts, a negative pressure is generated inside the exhaust pipe 6, actively drawing the gas from the reaction chamber through the exhaust pipe 6. This active extraction achieves precise control of pressure and flow rate within the chamber, avoiding the instability of relying solely on pressure difference for natural exhaust, improving exhaust efficiency, preventing process byproducts or unreacted gases from accumulating in the chamber, and, in conjunction with the distribution adjustment at the inlet, further optimizing the dynamic balance of gas flow within the chamber, enhancing process repeatability and stability, while reducing maintenance frequency and process defects.

[0033] Specifically, the quartz component 2 has a concave arc-shaped end with a quartz component baffle 7. This arc-shaped structure gives the end of the quartz component 2 with the baffle 7 a concave curved surface. When gas flows out of the channel of the quartz component 2, it first impacts the inner surface of the arc, where some of the gas's kinetic energy is absorbed and converted into pressure. The gas undergoes initial diffusion and buffering within this curved space before being guided to the various vents of the quartz component baffle 7. The arc-shaped structure effectively reduces the direct impact of the airflow on the quartz component baffle 7, avoids concentrated airflow jets, and allows the gas to more evenly cover the entire area of ​​the quartz component baffle 7 through pre-diffusion, laying a good foundation for the subsequent fine distribution through the vents. It also helps reduce airflow noise and vibration, improves the stability and lifespan of the component, and reduces component wear caused by airflow impact.

[0034] Specifically, the quartz component 2 has a gas channel inside, which connects the quartz inlet 1 and the vent on the quartz baffle 7. The gas channel is a specially designed cavity or pipe inside the quartz component 2, forming a continuous flow path from the quartz inlet 1 to the vent on the quartz baffle 7. After entering through the quartz inlet 1, the process gas is transported entirely within the confines of the gas channel until it reaches the vent entrance on the back of the quartz baffle 7. This ensures that the gas transmission process from the inlet to the distribution point is concentrated, efficient, and leak-free. The smooth inner wall of the channel reduces flow resistance and turbulence, maintaining airflow stability. This closed design also prevents unnecessary pre-mixing of the gas with the chamber environment before reaching the distribution point, ensuring the purity and controllability of the process gas composition, thereby improving process consistency and film quality.

[0035] Specifically, such as Figure 9 and 10As shown, the exhaust pipe 6 is L-shaped, and its inlet is located below the transfer port 5, connecting the inlet to the transfer port 5. The upper half of the vertical section of the L-shaped exhaust pipe 6 is a straight channel, while the lower half gradually decreases in inner diameter. The L-shaped exhaust pipe structure combines excellent fluid performance, compact spatial adaptability, and process adaptability advantages. The upper half of the vertical section uses a straight channel of equal diameter to rectify and homogenize the airflow entering from the transfer port 5, eliminating eddy currents and turbulence, and forming a stable laminar flow. The gradually narrowing converging channel in the lower half can smoothly increase the airflow velocity, forming a high-speed and stable airflow. This reduces pressure loss, improves exhaust and suction efficiency, and strongly entrains dust particles, preventing impurity deposition, making it suitable for high-cleanliness processes. At the same time, the unidirectional pressure difference formed by the gradually narrowing structure can effectively suppress backflow of airflow and impurities, maintaining stable chamber pressure. The L-shaped structure achieves the shortest air path design, reducing friction and leakage risks. Its bent structure allows for flexible adaptation to the internal space layout of the equipment, facilitating downstream pipeline connections and improving space utilization. The air inlet is located below the transfer port, ensuring the airflow path does not impact the precision sheet being transferred, preventing sheet drift and fragmentation issues, and guaranteeing transfer accuracy and yield. The overall structure has no dead zones, providing strong sealing and structural stability, and making processing, cleaning, and maintenance easier.

[0036] The exhaust duct 6 is downward-facing. The exhaust duct 6 extends vertically downwards or at a significant downward angle. Reacted gases and byproducts are discharged from the system along the downward-facing exhaust duct 6 under the suction or pressure drive of the air pump 8. Utilizing gravity to assist in the discharge of particulate matter and heavier gas components reduces deposition and accumulation within the duct. Downward exhaust prevents hot gases or process byproducts from diffusing upwards and potentially contaminating or thermally affecting components above the chamber (such as the lamp assembly 4). This layout also helps create a clearer, less disruptive airflow path, preventing exhaust turbulence from interfering with the main process airflow above the wafer, further improving deposition uniformity and the cleanliness of the equipment during long-term operation.

[0037] Specifically, a lamp assembly 4 is provided above the reaction chamber. The lamp assembly 4 is a heating and / or radiation source arranged at the top of the reaction chamber, typically used to heat the wafer 3 to activate or maintain the deposition reaction. During the thin film deposition process, the lamp assembly 4 emits radiation energy, penetrating the chamber space to uniformly heat the wafer 3, bringing it to and maintaining the required process temperature. This provides the necessary temperature environment for processes such as chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD). Its arrangement above the chamber minimizes physical obstruction and interference to the horizontal process airflow path, allowing for independent and coordinated optimization of airflow uniformity and thermal field management. The uniform thermal field, combined with the optimized airflow field, ensures the uniformity of the thin film deposition thickness and properties, improving the flexibility and applicability of the process.

[0038] Specifically, the pore diameter is largest in the center of the quartz baffle 7, and the pore diameter on the quartz baffle 7 is inversely proportional to the distance from the center of the quartz baffle 7. This design specifies that the pore diameter on the quartz baffle 7 exhibits a gradient distribution that decreases from the center to the edge, i.e., the central pore is the largest and the edge pore is the smallest. When airflow passes through the quartz baffle 7, the central region has low flow resistance due to the large pore diameter, allowing more gas to pass through, while the edge region has high flow resistance due to the small pore diameter, limiting the gas flow. This actively compensates for the uneven distribution problem in traditional structures where the flow rate is low at the center and high at the edge due to airflow inertia. By setting spatial differences in physical resistance, the airflow is redistributed, allowing the gas flowing out of the quartz baffle 7 to more evenly cover the wafer 3 region below. This is one of the core technical means to improve the uniformity of airflow velocity on the wafer surface, significantly improving the radial uniformity of thin film deposition.

[0039] Specifically, the pore density is lowest in the center of the quartz baffle 7, and the pore density on the quartz baffle 7 is proportional to the distance from the center of the quartz baffle 7. This design specifies that the number (density) of pores per unit area on the quartz baffle 7 increases from the center to the edge, that is, the pore distribution is sparsest in the central region and densest in the edge region. When the airflow passes through the quartz baffle 7, it is affected not only by the size of individual pores but also by the pore distribution density. The central region provides a larger flow rate through a small number of large pores, while the edge region provides a more diffused airflow with a controlled total flow rate through a large number of small pores. Through the synergistic design with the pore size gradient distribution, more refined and flexible three-dimensional control of the airflow spatial distribution is achieved, avoiding the local jetting or flow rate step that may be caused by simply changing the pore size. This makes the airflow distribution transition smoother, further improving the uniformity of the airflow in the two-dimensional plane above wafer 3, which has a significant contribution to improving the radial uniformity of thin film deposition and enhancing the process adaptability and adjustment space.

[0040] Specifically, the shape of the pore can be any one of the following: circular, rectangular, trapezoidal, or conical.

[0041] Specifically, in manufacturing the quartz baffle 7, the processing strictly adheres to the specification of continuous or stepped aperture changes from the center to the edge. This provides a clear, quantifiable, and repeatable engineering standard for the design concept. Through specific dimensional limitations, the controllability and consistency of airflow resistance adjustment intensity are ensured, enabling the optimized flow field effect to be stably reproduced across different equipment and production batches. This dimensional range is the optimal range verified through simulation or experimentation, effectively adjusting airflow distribution while avoiding the risk of blockage due to excessively small apertures or adjustment failure due to excessively large apertures, thus guaranteeing the long-term reliability of the equipment and the stability of the process.

[0042] Preferably, the aperture of the vent decreases sequentially from the center to both sides, for example, the aperture from the center to both sides is 3.3mm / 2.6mm / 2.4mm / 2.2mm / 2.1mm / 2.0mm. Considering the thickness of the plasma sheath, in order to allow the plasma from the remote plasma source to pass through the vent on the quartz baffle 7, the aperture of the vent is greater than or equal to 2mm. This improves the uniformity of the airflow above wafer 3, thereby improving the uniformity of the film thickness deposited in the process. In another embodiment, this patent does not limit the aperture of the quartz baffle. The aperture radius from the center to the edge is 1.65mm / 1.3mm / 1.2mm / 1.1mm / 1.05mm / 1.0mm, and the diameter is 3.3mm / 2.6mm / 2.4mm / 2.2mm / 2.1mm / 2.0mm. Considering the thickness of the plasma sheath, in order to allow the plasma from the remote plasma source to pass through the small holes of the quartz baffle, the minimum diameter of the small holes is ≥2mm.

[0043] Example 2 This embodiment provides a method for using an inlet / outlet structure for a reaction chamber, based on an inlet / outlet structure for a reaction chamber in Embodiment 1. The reaction gas is first dissociated into plasma by a remote plasma source (RPS), and then the plasma enters the reaction chamber through inlet 1. Inlet 2 directly introduces the reaction gas H2 as a dilution gas or carrier gas. Furthermore, the method of using the gas inlet / outlet structure for the reaction chamber includes the following steps: Step S1: Introduce the reaction gas into the quartz component 2 through the quartz inlet 1 located on the side wall of the reaction chamber; Step S2: The reactant gas flows through the quartz component 2, and the gas distribution is regulated through several pores on the surface of the quartz component baffle 7. Step S3: The airflow regulated by the quartz baffle 7 enters the reaction chamber and flows over the surface of the wafer 3 to perform thin film deposition; Step S4: Discharge the reaction byproducts and residual gas through the gas outlet pipe 6.

[0044] Specifically, the reaction gas is plasma obtained by dissociation from a remote plasma source RPS, dilution gas, and / or carrier gas.

[0045] Specifically, in step S1, the process reaction gas, excited by a remote plasma source, is precisely introduced into a quartz element 2 connected to it through a quartz inlet 1 located on the side wall of the reaction chamber. The quartz inlet 1 is connected to the external gas supply system via a sealed flange, ensuring leak-free gas delivery and stable, controllable flow. This step, through its directional inlet design, efficiently introduces highly reactive plasma gas into the chamber, avoiding gas diffusion losses at the inlet and providing a stable, concentrated gas source for subsequent uniform distribution. It also reduces film quality differences caused by uneven gas premixing.

[0046] Specifically, in step S2, the reactant gas is stably transported within the gas channel inside the quartz component 2 until it reaches the quartz baffle 7 at its end. As the gas flows over the baffle surface, it is regulated by the distribution of its unique pore structure. The baffle has larger pores in the center and smaller pores at the edges, and the pore density increases from the center to the edge, thereby actively regulating the gas flow rate and distribution space. This step, through its gradient pore structure, compensates for the unevenness of the natural airflow distribution in traditional designs, optimizing the gas flow state before it enters the chamber. This significantly improves the spatial uniformity of the airflow, laying a hydrodynamic foundation for uniform deposition.

[0047] Specifically, in step S3, a uniform airflow regulated by the quartz baffle 7 enters the reaction chamber and flows smoothly along a preset flow path across the surface of the wafer 3. During this process, the reactive gas undergoes a chemical or plasma-assisted deposition reaction on the wafer surface to form a thin film. Simultaneously, the lamp assembly 4 above the chamber uniformly heats the wafer to maintain a suitable reaction temperature. This step, by coupling a uniform airflow with a uniform thermal field, ensures that the reactive gas has a consistent residence time and reaction conditions in all areas of the wafer surface, thereby significantly improving the radial uniformity of film thickness and composition, and enhancing the consistency of device performance.

[0048] Specifically, in step S4, by means of the reaction process, unreacted gases, and residues are efficiently discharged from the chamber through the exhaust pipe 6 located between the reaction chamber and the transfer port 5, using the active suction force provided by the integrated air pump 8. The exhaust pipe 6 is designed to slope downwards, using gravity to assist in the discharge of heavier particles and condensates. This step not only achieves dynamic renewal and cleanliness maintenance of the chamber gas, but also avoids interference from airflow backflow or eddies to the main process area through directional downward exhaust, further stabilizing the internal flow field of the chamber and ensuring the repeatability and stability of the long-term process.

[0049] Specifically, such as Figure 4-7As shown, the simulation diagram shows the film thickness produced using the structure in Example 1 and the method in Example 2. The simulation diagram shows that the structure in Example 1 can significantly improve the uniformity of the airflow above the wafer, thereby improving the uniformity of the film thickness.

[0050] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0051] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can occur depending on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An inlet / outlet structure for a reaction chamber, characterized in that, It includes a quartz inlet (1), a quartz piece (2) and a quartz baffle (7). The quartz inlet (1) is located on the side wall of the reaction chamber. The quartz inlet (1) is connected to one end of the quartz piece (2). The other end of the quartz piece (2) is provided with a quartz baffle (7). The surface of the quartz baffle (7) is provided with several air holes. The several air holes are used to adjust the airflow distribution. An air outlet pipe (6) is provided between the reaction chamber and the transfer port (5).

2. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, An air pump (8) is installed inside the air outlet pipe (6).

3. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The quartz component (2) has a concave arc shape at one end with a quartz component baffle (7).

4. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The quartz component (2) has a gas channel inside, which is used to connect the quartz inlet (1) and the air hole on the quartz component baffle (7).

5. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The air outlet pipe (6) is set downwards.

6. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, A lamp assembly (4) is provided above the reaction chamber.

7. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The pore diameter is largest in the middle of the quartz baffle (7), and the pore diameter on the quartz baffle (7) is inversely proportional to the distance from the middle of the quartz baffle (7).

8. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The pore density is lowest in the middle of the quartz baffle (7), and the pore density on the quartz baffle (7) is proportional to the distance from the middle of the quartz baffle (7).

9. The gas inlet / outlet structure for a reaction chamber according to claim 1, characterized in that, The shape of the pores can be any one of circular, rectangular, trapezoidal or conical.

10. A method of using an inlet / outlet structure for a reaction chamber, based on an inlet / outlet structure for a reaction chamber according to any one of claims 1-9, characterized in that, Includes the following steps: Step S1: Introduce the reaction gas into the quartz component (2) through the quartz inlet (1) located on the side wall of the reaction chamber; Step S2: The reaction gas flows through the quartz component (2), and the gas distribution is regulated through several pores on the surface of the quartz component baffle (7); Step S3: The airflow regulated by the quartz baffle (7) enters the reaction chamber and flows over the surface of the wafer (3) to perform thin film deposition; Step S4: Discharge the reaction byproducts and residual gas through the gas outlet pipe (6).

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