Inductively coupled plasma etching machine and method based on semiconductor device production
By using a moving plate and a cleaning mechanism in an inductively coupled plasma etching machine, the problems of plasma diffusion and etching chamber cleaning are solved, enabling uniform etching and cleaning of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG HANYA NETWORK TECHNOLOGY CO LTD
- Filing Date
- 2026-03-04
- Publication Date
- 2026-05-29
AI Technical Summary
Existing inductively coupled plasma etching machines are inadequate in limiting plasma diffusion and cleaning the inner walls of the etching chamber, leading to uneven etching and cross-contamination problems.
The system employs a moving mechanism and a cleaning mechanism. By moving the plate to form a cylindrical structure, plasma diffusion is restricted. After etching, the inner side of the plate is cleaned. Combined with the design of an electromagnet and a cleaning seat, the plasma is effectively restricted and cleaned.
This achieves a uniform distribution of radial etching rates in semiconductor devices, avoiding particulate contamination and cross-contamination, and improving etching performance and cleaning efficiency.
Smart Images
Figure FT_1 
Figure FT_2 
Figure FT_3
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor etching technology, specifically to an inductively coupled plasma etching machine and method based on semiconductor device manufacturing. Background Technology
[0002] Inductively coupled plasma (ICP) etching machines are key equipment used in semiconductor manufacturing, microelectromechanical systems (MEMS), and optoelectronic devices. Their core technology lies in using high-density plasma to achieve precise etching of materials. They combine the advantages of physical bombardment and chemical reaction, ensuring high etching rates while exhibiting good anisotropy and selectivity.
[0003] Focusing rings or edge shielding rings can significantly improve etching uniformity. This structure physically confines the unintended diffusion of plasma at the wafer edge, compensating for plasma density attenuation in the edge region, thereby achieving a uniform distribution of the radial etching rate of the wafer.
[0004] Existing inductively coupled plasma etching machines use focusing rings that only restrict plasma diffusion from the edge of semiconductor devices such as wafers, but cannot restrict plasma diffusion between two electrodes. This results in a certain deficiency in achieving a uniform distribution of radial etching rate on the wafer. Furthermore, after one etching operation, the space inside the etching chamber needs to be cleaned to avoid cross-contamination during the next etching operation. However, the interior of the etching chamber is uneven due to the various structures installed inside, and cleaning can only be done by suction, which is not very effective. To solve these problems, an inductively coupled plasma etching machine and method based on semiconductor device manufacturing is proposed. Summary of the Invention
[0005] To achieve the above objectives, the present invention provides the following technical solution: an inductively coupled plasma etching machine for semiconductor device manufacturing, comprising an etching machine body and an etching chamber, and further comprising: The base is fixedly installed on the bottom of the inner wall of the etching chamber. A first connecting seat is fixedly installed at the top center of the base. A first electrode is fixedly installed on the top of the first connecting seat. An electrostatic chuck for fixing semiconductor devices is fixedly installed on the top of the first electrode. The top seat is fixedly installed on the upper end of the inner wall of the etching chamber, and the bottom of the top seat is fixedly provided with a second connecting seat, and the bottom of the second connecting seat is fixedly provided with a second electrode. A moving mechanism, located on top of the base, includes: The movable plates are located on the top of the base and are arranged symmetrically with respect to the center point of the base. The two movable plates can move closer to each other or move further away from each other. On the side where the two movable plates are close to each other, there are a first plate, a second plate, a third plate, and a fourth plate. The first plate, the second plate, the third plate, and the fourth plate are all semi-annular in design and form a cylindrical shape when connected to seal the space for plasma etching of semiconductor devices. The inside of the etching chamber is equipped with a cleaning mechanism for cleaning the first plate, the second plate, the third plate, and the fourth plate.
[0006] Furthermore, the first plate is located on top of the second plate, the third plate is located on top of the fourth plate, and the sides of the first and second plates are respectively attached and connected to the sides of the third and fourth plates to form a cylindrical shape; The first plate and the second plate are provided with a first groove on the side where they are close to each other, as well as the third plate and the fourth plate are provided with a first groove. The inner wall of the first groove is fitted with a semi-ring. The upper and lower ends of the side walls of the two semi-rings are dynamically sealed to the inner side walls of the four first grooves.
[0007] Furthermore, the top inner wall and bottom inner wall of the first groove are provided with second grooves arranged in a ring array, and the top inner wall and bottom inner wall of the second groove are provided with third grooves. The inner wall diameter of the third groove is larger than the inner wall diameter of the second groove, and the inner wall diameter of the first groove is larger than the inner wall diameter of the third groove. The inner walls of the third groove and the second groove are respectively fitted with a limiting post and a limiting rod. The ends of the limiting post and the limiting rod that are close to each other are fixedly connected. A first spring is fitted inside the third groove at the end of the limiting post that is far from the limiting rod. The end of the limiting rod that is far from the limiting post is fixedly connected to the top and bottom of the semi-ring.
[0008] Furthermore, metal semi-rings are fixedly provided on the outer sides of the first plate and the second plate, as well as on the outer sides of the third plate and the fourth plate. The metal semi-rings are made of elastic metal material so that the first plate and the second plate tend to move away from each other, and the third plate and the fourth plate tend to move away from each other. The metal semi-ring is located on the side where the first plate and the second plate are close to each other, and on the side where the third plate and the fourth plate are close to each other.
[0009] Furthermore, insert plates are fixedly provided on the side of the first plate near the third plate and on the side of the second plate near the fourth plate. The two sides of the semi-annular body located between the first plate and the second plate extend out of the first plate and the second plate and are flush with the side of the insert plate away from the first plate and the second plate. Rubber blocks are fixedly provided on the side of the two insert plates that are close to each other. The third plate has slots for inserting plates on the side near the first plate and the fourth plate has slots on the side near the second plate. The semi-annular body between the third and fourth plates extends to the inner wall of the slot on the side away from insertion, so that the insert can be inserted into the slot. The side wall of the insert is dynamically sealed to the inner wall of the slot.
[0010] Furthermore, the top of the base is provided with a first sliding groove, and a first slider is placed inside the first sliding groove in a symmetrical arrangement with respect to the center point of the first sliding groove. The tops of the two first sliders are respectively fixedly connected to the bottoms of the two movable plates. A second sliding groove is provided on the side of the two movable plates that are close to each other. A second slider is placed inside the second sliding groove in a symmetrical arrangement with respect to the center point of the second sliding groove. The four second sliders are respectively fixedly connected to the first plate, the second plate, the third plate and the fourth plate. The side wall of the etching chamber is rotatably provided with a threaded rod extending into the first slide groove. The threaded rod is threadedly connected to two first sliders. The threaded rod is designed as a bidirectional screw. A servo motor for driving the threaded rod to rotate is fixed on the outer wall of the etching chamber.
[0011] Furthermore, the cleaning mechanism includes: The electric slide rail is fixedly installed at the bottom of the top seat and located outside the second connecting seat. The electric slide rail has a ring-shaped design. The sliding end of the electric slide rail is fixedly provided with a fixed seat. The bottom of the fixed seat is provided with a third slide groove. The third slide groove contains a third slider. The bottom of the third slider is fixedly provided with a curved plate. A guide rod is fixedly installed on the inner walls of both sides of the third slide groove. The first electromagnet and the second electromagnet are respectively fixedly installed on the side wall of the third slider and the inner side wall of the third slide groove. The guide rod passes through the third slider, the first electromagnet and the second electromagnet. A second spring is sleeved on the side of the guide rod away from the first electromagnet.
[0012] Furthermore, the cleaning mechanism also includes: The first cleaning seat is fixedly located at the bottom of the curved plate on the side away from the third slider; Clamping plates are fixedly installed on the inner side wall of the etching chamber and are arranged at intervals. Each clamping plate has a push rod fitted on its side wall. A second cleaning seat is fixedly installed at the end of the push rod that is close to each other, and a baffle is fixedly installed at the end of the push rod that is far from each other. A third spring is fitted on the side wall of the push rod between the clamping plate and the baffle. A first conduit and a second conduit are fixedly installed at intervals inside the first cleaning seat and the second cleaning seat, respectively. A third conduit and a fourth conduit are fixedly installed at the water inlet end of the first conduit and the second conduit, respectively. Both the third conduit and the fourth conduit extend to the outside of the etching chamber.
[0013] Furthermore, the cleaning mechanism also includes: The first card plate is fixedly installed on the outer wall of the etching chamber. The inner wall of the first card plate is fitted with a first toothed plate extending into the etching chamber. The first toothed plate is slidably connected to the side wall of the etching chamber. The side wall of the first toothed plate located outside the etching chamber is fixedly fitted with a second card plate. The side wall of the first toothed plate located between the first card plate and the second card plate is fitted with a fourth spring. The first gear is rotatably mounted on the inner wall of the etching chamber and meshes with the first toothed plate. The inner wall of the etching chamber is rotatably mounted with a second gear. The second gear and the first gear are connected by a transmission mechanism. The second toothed plate is slidably disposed on the side wall of the etching chamber. The top of one end of the second toothed plate inside the etching chamber meshes with the second gear. A frame is fixedly disposed at one end of the second toothed plate inside the etching chamber. The frame has a U-shaped design, and inclined plates are fixedly disposed on the inner side of the frame.
[0014] This invention also provides a method for using an inductively coupled plasma etching machine based on semiconductor devices. The method, employing the aforementioned inductively coupled plasma etching machine based on semiconductor devices, includes the following steps: S1: Place the semiconductor device to be etched on top of the electrostatic chuck. Then, a cylindrical structure formed by the first plate, the second plate, the third plate and the fourth plate is placed over the outside of the semiconductor device to seal the space where the semiconductor device is located. S2: After the semiconductor device is sealed, plasma gas is used to vertically bombard the surface of the semiconductor device under the action of the first electrode, the second electrode and the etching machine body to etch the semiconductor device. S3: After etching of the semiconductor device is completed, the inner sides of the first plate, second plate, third plate and fourth plate are cleaned by the cleaning mechanism to assist in the next etching.
[0015] This invention provides an inductively coupled plasma etching machine and method for semiconductor device manufacturing. Compared with the prior art, it has the following advantages: 1. This invention physically constrains the unintended diffusion of plasma at the edge of a semiconductor, compensating for the plasma density decay in the edge region, thereby achieving a uniform distribution of radial etching rate in the semiconductor device. Compared with the traditional method of using a focusing ring or edge shielding ring, which can not only block and restrict plasma from the edge of the semiconductor device, but also restrict plasma diffusion from the space between the first electrode and the second electrode, this invention further improves the etching effect of the semiconductor device.
[0016] 2. The present invention cleans the inner walls of the first plate, the second plate, the third plate and the fourth plate through a cleaning mechanism, so as to avoid the deposition of by-products on the inner wall of the cavity and the surface of electrodes when the reacting gas reacts with the semiconductor device, thereby avoiding particulate contamination, process drift and cross-contamination.
[0017] 3. The present invention can maintain a certain degree of sealing while the first plate, second plate, third plate and fourth plate are sleeved on the outside of the semiconductor device, thereby further restricting the diffusion of plasma and improving the etching effect. By connecting the first, second, third, and fourth plates to form a cylindrical body that is fitted onto the outside of the semiconductor, it is possible to limit plasma diffusion during the etching process and to separate and reset the plates after etching, so as to remove the etched semiconductor device. This facilitates continuous etching and use. In conjunction with the cleaning mechanism, it is possible to clean the inside of the first, second, third, and fourth plates after the first etching, so as to facilitate the next etching.
[0018] 4. The present invention can scrape the inner sides of the first plate, the second plate, the third plate and the fourth plate by means of the tip of the first cleaning seat, while the two second cleaning seats are close to each other to scrape the tip of the first cleaning seat, so as to clean the impurities on the surface of the first cleaning seat, making it convenient for the first plate, the second plate, the third plate and the fourth plate to be cleaned in the next use. By using the inclined plate, when the second cleaning seat is squeezed close to each other, the tips of the first and second cleaning seats can be brought into close contact under the reverse action of the first cleaning seat, thereby improving the cleaning effect. Attached Figure Description
[0019] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the longitudinal cross-sectional structure of the etching chamber of the present invention; Figure 3 This is a schematic diagram of the moving mechanism, the first plate, the second plate, the third plate, and the fourth plate of the present invention. Figure 4 This is a schematic diagram of the cleaning mechanism structure of the present invention; Figure 5 This is a schematic diagram of the third plate, the fourth plate, and the moving mechanism of the present invention; Figure 6 This is a longitudinal sectional view of the first plate, second plate, third plate, and fourth plate of the present invention. Figure 7 This is an exploded view of the second connecting seat, the second electrode, and the cleaning mechanism of the present invention. Figure 8 This is an exploded view of the electrostatic chuck, the first electrode, and the first connector of the present invention. Figure 9 For the present invention Figure 8 A magnified structural diagram of A in the middle; Figure 10 For the present invention Figure 8 A magnified structural diagram of B in the diagram; Figure 11 This is a schematic diagram of the top structure of the first plate, second plate, third plate and fourth plate of the present invention; Figure 12 This is a longitudinal sectional view of the fixing base, the first clamping plate, the bent plate, and the frame of the present invention. Figure 13 This is a longitudinal sectional view of the first and second cleaning seats of the present invention.
[0020] The reference numerals in the above figures are as follows: 1. Etching machine body; 2. Etching chamber; 3. Base; 4. Top seat; 5. Moving mechanism; 6. Second plate; 7. Fourth plate; 8. Third plate; 9. First plate; 10. Cleaning mechanism; 11. First connecting seat; 12. First electrode; 13. Electrostatic chuck; 14. Second connecting seat; 15. Second electrode; 16. Insert plate; 17. Semi-ring; 18. Slot; 19. Rubber block; 20. Metal semi-ring; 21. Third groove; 22. Second groove; 23. First groove; 51. Moving plate; 52. Threaded rod; 53. Servo motor; 100. Second guide plate; 101. First clamping plate; 102. Second toothed plate; 103. Fixed seat; 104. Electric slide rail; 105. Guide rod; 106. Second clamping plate; 107. First toothed plate; 108. First gear; 109. Second gear; 1090. Second cleaning seat; 1091. Frame; 1092. Transmission mechanism; 1093. Inclined plate; 1094. Second electromagnet; 1095. First electromagnet; 1096. Bending plate; 1097. Third guide plate; 1098. Fourth guide plate; 1099. Clamping plate; 0911. Baffle; 0912. First cleaning seat; 0913. First guide plate; 0914. Support rod. Detailed Implementation
[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0022] Example 1, please refer to Figures 1-5 An inductively coupled plasma etching machine for semiconductor device manufacturing includes an etching machine body 1 and an etching chamber 2, and also includes: The base 3 is fixedly installed on the bottom of the inner wall of the etching chamber 2. The first connecting seat 11 is fixedly installed at the top center of the base 3. The first electrode 12 is fixedly installed on the top of the first connecting seat 11. The electrostatic chuck 13 for fixing semiconductor devices is fixedly installed on the top of the first electrode 12. The top seat 4 is fixedly installed on the upper end of the inner wall of the etching chamber 2. The bottom of the top seat 4 is fixedly provided with a second connecting seat 144, and the bottom of the second connecting seat 144 is fixedly provided with a second electrode 15. The moving mechanism 5 is located on top of the base 3, and the moving mechanism 5 includes: The movable plate 51 is located on the top of the base 3 and is arranged symmetrically with respect to the center point of the base 3. The two movable plates 51 can move closer to each other or move further away from each other. On the side where the two movable plates 51 are close to each other, there are a first plate body 9, a second plate body 6, a third plate body 8 and a fourth plate body 7. The first plate body 9, the second plate body 6, the third plate body 8 and the fourth plate body 7 are all semi-annular in design and form a cylindrical shape after being connected, so as to seal the space for plasma etching of semiconductor devices. The etching box 2 is equipped with a cleaning mechanism 10 for cleaning the first plate body 9, the second plate body 6, the third plate body 8 and the fourth plate body 7.
[0023] In this invention, the semiconductor device to be etched is placed on top of the electrostatic chuck 13 and fixed by the electrostatic chuck 13. After fixing, the moving mechanism 5 moves the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 closer together, thereby forming a cylindrical structure that fits over the outside of the semiconductor device. During etching, this physically restricts the unintended diffusion of plasma at the semiconductor edge, compensating for plasma density attenuation in the edge region, thus achieving a uniform radial etching rate distribution for the semiconductor device. Compared to traditional methods using focusing rings or edge shielding rings, this not only blocks and restricts plasma from near the edge of the semiconductor device but also restricts plasma diffusion from the space between the first electrode 12 and the second electrode 15, further improving the etching effect. After etching, the moving mechanism 5 resets the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7, allowing the etched semiconductor device to be removed for future use. Before etching the new semiconductor device, the cleaning mechanism 10 cleans the inner walls of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 to prevent byproducts from being deposited on the inner walls of the chamber and on the surfaces of electrodes while the reacting gas reacts chemically with the semiconductor device, thereby avoiding particulate contamination, process drift and cross-contamination.
[0024] Please see Figures 6-11The first plate 9 is located on top of the second plate 6, and the third plate 8 is located on top of the fourth plate 7. The first plate 9 and the second plate 6 are respectively attached and connected to the sides of the third plate 8 and the fourth plate 7 to form a cylindrical shape. First grooves 23 are provided on the side of the first plate 9 and the second plate 6 that are close to each other, as well as on the side of the third plate 8 and the fourth plate 7 that are close to each other. The inner wall of each first groove 23 is fitted with a semi-ring 17. The upper and lower ends of the side walls of the two semi-rings 17 are dynamically sealed to the inner side walls of the four first grooves 23.
[0025] The top inner wall and bottom inner wall of the first groove 23 are provided with second grooves 22 arranged in a ring array. The top inner wall and bottom inner wall of the second groove 22 are provided with third grooves 21. The inner wall diameter of the third groove 21 is larger than the inner wall diameter of the second groove 22. The inner wall diameter of the first groove 23 is larger than the inner wall diameter of the third groove 21. The inner walls of the third groove 21 and the second groove 22 are respectively fitted with a limiting post and a limiting rod. The ends of the limiting post and the limiting rod that are close to each other are fixedly connected. The inside of the third groove 21 and at the end of the limiting post that is far from the limiting rod is fitted with a first spring. The end of the limiting rod that is far from the limiting post is fixedly connected to the top and bottom of the semi-ring 17.
[0026] Metal semi-rings 20 are fixedly provided on the outer sides of the first plate 9 and the second plate 6, as well as on the outer sides of the third plate 8 and the fourth plate 7. The metal semi-rings 20 are made of elastic metal material so that the first plate 9 and the second plate 6 tend to move away from each other, and the third plate 8 and the fourth plate 7 tend to move away from each other. The metal semi-ring 20 is located on the side where the first plate 9 and the second plate 6 are close to each other, and on the side where the third plate 8 and the fourth plate 7 are close to each other.
[0027] Insert plates 16 are fixedly provided on the side of the first plate 9 near the third plate 8 and on the side of the second plate 6 near the fourth plate 7. The two sides of the semi-ring 17 located between the first plate 9 and the second plate 6 extend to the outside of the first plate 9 and the second plate 6 and are flush with the side of the insert plate 16 away from the first plate 9 and the second plate 6. Rubber blocks 19 are fixedly provided on the side of the two insert plates 16 that are close to each other. The third plate 8 has a slot 18 for fitting the insert plate 16 on the side near the first plate 9 and the fourth plate 7 has a slot 18 on the side near the second plate 6. The semi-annular body 17 located between the third plate 8 and the fourth plate 7 extends to the inner wall of the slot 18 away from the insertion and removal side, so that the insert plate 16 can be inserted into the slot 18, and the side wall of the insert plate 16 and the inner wall of the slot 18 are dynamically sealed.
[0028] In specific implementation, a semi-ring 17 is provided between the first plate 9 and the second plate 6, and between the third plate 8 and the fourth plate 7, thereby connecting the joints between the first plate 9 and the second plate 6, and between the third plate 8 and the fourth plate 7. This allows the first plate 9 and the second plate 6, and between the third plate 8 and the fourth plate 7 to move relative to each other while sealing their joints. Under the action of the metal semi-ring 20, the first plate 9 and the second plate 6, and between the third plate 8 and the fourth plate 7 tend to move away from each other, so that the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 can abut against the bottom of the second electrode 15 and the top of the electrostatic chuck 13. This allows the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 to be fitted onto the outside of the semiconductor device while maintaining a certain degree of sealing, further restricting plasma diffusion, thereby improving the etching effect. The semi-ring 17 is elastically supported by the limiting post and the limiting rod under the action of the first spring, thereby preventing the semi-ring 17 from shifting too far into the first plate 9 or the second plate 6, and enabling the semi-ring 17 to connect with the first plate 9 and the second plate 6, thus improving stability.
[0029] By extending one of the semi-ring bodies 17 outside the first plate 9 and the second plate 6 and flush with the insert plate 16, it is easy to insert it together with the insert plate 16 into the slot 18, so as to facilitate sealing between the first plate 9, the second plate 6 and the third plate 8 and the fourth plate 7.
[0030] By connecting the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 to form a cylindrical body that is fitted onto the outside of the semiconductor, plasma diffusion is restricted during etching. After etching, the components can be separated and reset for easy removal of the etched semiconductor device, facilitating continuous etching. Furthermore, in conjunction with the cleaning mechanism 10, the inner sides of the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 are cleaned after the first etching, facilitating subsequent etching.
[0031] The top of the base 3 is provided with a first slide groove. Inside the first slide groove, there are first sliders arranged symmetrically with respect to the center point of the first slide groove. The tops of the two first sliders are fixedly connected to the bottoms of the two movable plates 51 respectively. The two movable plates 51 are provided with a second slide groove on the side that is close to each other. Inside the second slide groove, there are second sliders arranged symmetrically with respect to the center point of the second slide groove. The four second sliders are fixedly connected to the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 respectively. The side wall of the etching chamber 2 is provided with a threaded rod 52 extending into the first slide groove. The threaded rod 52 is threadedly connected to two first sliders. The threaded rod 52 is designed as a bidirectional screw. The outer wall of the etching chamber 2 is fixed with a servo motor 53 for driving the threaded rod 52 to rotate.
[0032] In practical implementation, the servo motor 53 drives the threaded rod 52 to rotate, thereby causing the two moving plates 51 to move closer or further apart. When the two moving plates 51 move closer together, they cause the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 to move closer together. Under the action of the second sliding groove, the first plate 9 or the second plate 6 can move vertically independently. At the same time, the third plate 8 and the fourth plate 7 can also move vertically independently, so as to fit the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 onto the outside of the semiconductor device. When the two moving plates 51 move further apart, the first plate 9 moves away from the third plate 8, and the second plate 6 moves away from the fourth plate 7, thereby facilitating the removal of the etched semiconductor device.
[0033] When the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 move between the second motor and the electrostatic chuck 13, the metal semi-ring 20 is designed to address the tightness of the sealing rings at the top of the first plate 9 and the third plate 8, and at the bottom of the second plate 6 and the fourth plate 7, against the second motor and the electrostatic chuck 13. Therefore, when the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 move outside the electrostatic chuck 13, the height at which the first plate 9 and the second plate 6 move upward will not affect the re-entry of the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 between the second plate 6 and the electrostatic chuck 13.
[0034] The second connecting seat 144 creates a height difference between the bottom of the second electrode 15 and the bottom of the top seat 4, which facilitates the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 to be fitted onto the outside of the semiconductor device, and also allows the subsequent cleaning mechanism 10 to have rotation space to clean the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7.
[0035] Etching gas typically enters between the second electrode 15 and the electrostatic chuck 13 through micropores on the surface of the second electrode 15. The first electrode 12 is the lower electrode, designed to make the plasma bombard the surface of the semiconductor device vertically. These are all existing technologies and will not be described in detail here.
[0036] Example 2, please refer to Figures 12-13 The technical difference between this embodiment and Embodiment 1 is that the cleaning mechanism 10 includes: The electric slide rail 104 is fixedly installed at the bottom of the second connecting seat 144 and located outside the second electrode 15. The electric slide rail 104 has a ring design. The sliding end of the electric slide rail 104 is fixedly provided with a fixed seat 103. The bottom of the fixed seat 103 is provided with a third slide groove. The third slide groove is placed inside the third slide groove. The bottom of the third slide groove is fixedly provided with a bent plate 1096. The guide rod 105 is fixedly installed on the inner walls of both sides of the third slide groove. The first electromagnet 1095 and the second electromagnet 1094 are fixedly installed on the side wall of the third slider and the inner side wall of the third slide groove, respectively. The guide rod 105 passes through the third slider, the first electromagnet 1095 and the second electromagnet 1094. A second spring is sleeved on the side of the guide rod 105 away from the first electromagnet 1095.
[0037] Cleanup organization 10 also includes: The first cleaning seat 0912 is fixedly installed on the bottom side of the curved plate 1096 away from the third slider; Clamping plates 1099 are fixedly installed on the inner side wall of the etching chamber 2 and are arranged at intervals. Each clamping plate 1099 has a stop rod 0914 sleeved on its side wall. Each stop rod 0914 has a second cleaning seat 1090 fixedly installed at the end that is close to each other, and a baffle 0911 fixedly installed at the end that is far from each other. A third spring is sleeved on the side wall of the stop rod 0914 between the clamping plate 1099 and the baffle 0911. The first cleaning seat 0912 and the second cleaning seat 1090 are respectively fixedly installed with a first conduit 0913 and a second conduit 100 arranged at intervals inside. The water inlet ends of the first conduit 0913 and the second conduit 100 are respectively fixedly installed with a third conduit 1097 and a fourth conduit 1098. Both the third conduit 1097 and the fourth conduit 1098 extend to the outside of the etching chamber 2.
[0038] Cleanup organization 10 also includes: A first clamping plate 101 is fixedly disposed on the outer wall of the etching chamber 2. A first toothed plate 107 extending into the etching chamber 2 is sleeved on the inner wall of the first clamping plate 101. The first toothed plate 107 is slidably connected to the side wall of the etching chamber 2. A second clamping plate 106 is fixedly sleeved on the side wall of the first toothed plate 107 located outside the etching chamber 2. A fourth spring is sleeved on the side wall of the first toothed plate 107 located between the first clamping plate 101 and the second clamping plate 106. The first gear 108 is rotatably disposed on the inner side wall of the etching chamber 2 and meshes with the first tooth plate 107. The inner side wall of the etching chamber 2 is rotatably provided with a second gear 109. The second gear 109 and the first gear 108 are connected by a transmission mechanism 1092. The second toothed plate 102 is slidably disposed on the side wall of the etching chamber 2. The top of one end of the second toothed plate 102 located inside the etching chamber 2 meshes with the second gear 109. A frame 1091 is fixedly disposed at one end of the second toothed plate 102 located inside the etching chamber 2. The frame 1091 has a U-shaped design, and inclined plates 1093 are fixedly disposed on the inner side of the frame 1091.
[0039] In practical implementation, after one etching of the semiconductor device, the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 are reset and separated. At this time, the first electromagnet 1095 and the second electromagnet 1094 are energized to generate a repulsive force, thereby driving the first electromagnet 1095 and the third slider to move, so as to drive the bending plate 1096 and the first cleaning seat 0912 to move between the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7. As the electric slide rail 104 drives the fixed seat 103 to rotate, it drives the first cleaning seat 0912 to rotate. During this process, the repulsion between the first plate 9 and the fourth plate 7 is released. When the first electromagnet 1095 and the second electromagnet 1094 are energized, under the action of the second spring, the tip of the first cleaning seat 0912 can adhere to the inner wall of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7. At the same time, the tip of the first cleaning seat 0912 can scrape the inner side of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7. Simultaneously, through the first conduit 0913 and the third conduit 1097 connected to the external suction pipe, the inner surface of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 can be sucked, thereby improving the cleaning effect.
[0040] The first cleaning seat 0912 is moved along the guide rod 105 by the first electromagnet 1095 and the second electromagnet 1094, so that the first cleaning seat 0912 can be moved to the outside of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7, so that the first cleaning seat 0912 can fit against the inner sidewall of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7, thereby improving the cleaning effect, and without affecting the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 being fitted on the outside of the semiconductor device.
[0041] After the inner surfaces of the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7 are cleaned, the first cleaning seat 0912 is reset. Then, a suction force is generated between the first electromagnet 1095 and the second electromagnet 1094, so that the bent plate 1096 and the first cleaning seat 0912 move stably along the length direction of the first toothed plate 107. During the movement, the bent plate 1096 squeezes the first toothed plate 107 to overcome the movement of the fourth spring. The first toothed plate 107 drives the second toothed plate 102 to move in the opposite direction through the first gear 108, the transmission mechanism 1092, and the second gear 109, so as to drive the frame 1091 to move from the outside of the two second cleaning seats 1090. Under the action of the inclined plate 1093, the two second cleaning seats 1090 are squeezed to move closer to each other, thereby cleaning the tip of the first cleaning seat 0912 to remove impurities from the surface of the first cleaning seat 0912, so as to facilitate the next cleaning of the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7.
[0042] The inclined plate 1093 is made of rubber so that when the second cleaning seat 1090 is squeezed close to each other, the tips of the first cleaning seat 0912 and the second cleaning seat 1090 can be pressed together under the reverse action of the first cleaning seat 0912, thereby improving the cleaning effect.
[0043] By designing one side of the first cleaning seat 0912 and the second cleaning seat 1090 as an arc shape and the other side as a pointed shape, it is convenient to clean and scrape at the pointed position, and it is also convenient for the arc-shaped position of the second cleaning seat 1090 to be squeezed.
[0044] The third conduit 1097 supplies air to the multiple first conduits 0913 and rotates with the fixed base 103 to clean the first plate 9, the second plate 6, the third plate 8, and the fourth plate 7. When the third conduit 1097 is connected to an external suction line, it can be connected via a flexible hose, and the fixed base 103 can be rotated back and forth to prevent the third conduit 1097 from getting tangled or knotted. Alternatively, it can be connected to the external suction line via a ring conduit, and the ring conduit and the third conduit 1097 are connected via a flexible hose, with space reserved for rotation. In addition, the reciprocating rotation of the fixed base 103 facilitates stable air delivery. The specific connection of the pipeline is existing technology and will not be described in detail here.
[0045] This invention also provides a method for using an inductively coupled plasma etching machine based on semiconductor devices. The method includes the following steps: S1: The semiconductor device to be etched is placed on top of the electrostatic chuck 13. Then, the cylindrical structure formed by the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 is sleeved on the outside of the semiconductor device to seal the space where the semiconductor device is located. S2: After the semiconductor device is sealed, plasma gas is vertically bombarded on the surface of the semiconductor device under the action of the first electrode 12, the second electrode 15 and the etching machine body 1 to etch the semiconductor device. S3: After etching of the semiconductor device is completed, the cleaning mechanism 10 cleans the inner sides of the first plate 9, the second plate 6, the third plate 8 and the fourth plate 7 to assist in the next etching.
[0046] Furthermore, any content not described in detail in this specification is existing technology known to those skilled in the art.
[0047] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0048] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. An inductively coupled plasma etching machine for semiconductor device manufacturing, comprising an etching machine body and an etching chamber, characterized in that, Also includes: The base is fixedly installed on the bottom of the inner wall of the etching chamber. A first connecting seat is fixedly installed at the top center of the base. A first electrode is fixedly installed on the top of the first connecting seat. An electrostatic chuck for fixing semiconductor devices is fixedly installed on the top of the first electrode. The top seat is fixedly installed on the upper end of the inner wall of the etching chamber, and the bottom of the top seat is fixedly provided with a second connecting seat, and the bottom of the second connecting seat is fixedly provided with a second electrode. A moving mechanism, located on top of the base, includes: The movable plates are located on the top of the base and are arranged symmetrically with respect to the center point of the base. The two movable plates can move closer to each other or move further away from each other. On the side where the two movable plates are close to each other, there are a first plate, a second plate, a third plate, and a fourth plate. The first plate, the second plate, the third plate, and the fourth plate are all semi-annular in design and form a cylindrical shape when connected to seal the space for plasma etching of semiconductor devices. The inside of the etching chamber is equipped with a cleaning mechanism for cleaning the first plate, the second plate, the third plate, and the fourth plate.
2. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 1, characterized in that, The first plate is located on top of the second plate, and the third plate is located on top of the fourth plate. The sides of the first plate and the second plate are respectively attached and connected to the sides of the third plate and the fourth plate to form a cylindrical shape. The first plate and the second plate are provided with a first groove on the side where they are close to each other, as well as the third plate and the fourth plate are provided with a first groove. The inner wall of the first groove is fitted with a semi-ring. The upper and lower ends of the side walls of the two semi-rings are dynamically sealed to the inner side walls of the four first grooves.
3. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 2, characterized in that, The first groove has second grooves arranged in a ring array on both the top inner wall and the bottom inner wall. The second groove has third grooves on both the top inner wall and the bottom inner wall. The inner diameter of the third groove is larger than the inner diameter of the second groove, and the inner diameter of the first groove is larger than the inner diameter of the third groove. The inner walls of the third groove and the second groove are respectively fitted with a limiting post and a limiting rod. The ends of the limiting post and the limiting rod that are close to each other are fixedly connected. A first spring is fitted inside the third groove at the end of the limiting post that is far from the limiting rod. The end of the limiting rod that is far from the limiting post is fixedly connected to the top and bottom of the semi-ring.
4. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 3, characterized in that, Metal semi-rings are fixedly provided on the outer sides of the first plate and the second plate, as well as on the outer sides of the third plate and the fourth plate. The metal semi-rings are made of elastic metal material so that the first plate and the second plate tend to move away from each other, and the third plate and the fourth plate tend to move away from each other. The metal semi-ring is located on the side where the first plate and the second plate are close to each other, and on the side where the third plate and the fourth plate are close to each other.
5. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 4, characterized in that, Insert plates are fixedly provided on the side of the first plate near the third plate and the side of the second plate near the fourth plate. The two sides of the semi-ring between the first plate and the second plate extend out of the first plate and the second plate and are flush with the side of the insert plate away from the first plate and the second plate. Rubber blocks are fixedly provided on the side of the two insert plates that are close to each other. The third plate has slots for inserting plates on the side near the first plate and the fourth plate has slots on the side near the second plate. The semi-annular body between the third and fourth plates extends to the inner wall of the slot on the side away from insertion, so that the insert can be inserted into the slot. The side wall of the insert is dynamically sealed to the inner wall of the slot.
6. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 5, characterized in that, The top of the base is provided with a first sliding groove, and a first slider is placed inside the first sliding groove in a symmetrical arrangement with respect to the center point of the first sliding groove. The tops of the two first sliders are respectively fixedly connected to the bottoms of the two movable plates. A second sliding groove is provided on the side of the two movable plates that are close to each other. A second slider is placed inside the second sliding groove in a symmetrical arrangement with respect to the center point of the second sliding groove. The four second sliders are respectively fixedly connected to the first plate, the second plate, the third plate and the fourth plate. The side wall of the etching chamber is rotatably provided with a threaded rod extending into the first slide groove. The threaded rod is threadedly connected to two first sliders. The threaded rod is designed as a bidirectional screw. A servo motor for driving the threaded rod to rotate is fixed on the outer wall of the etching chamber.
7. The inductively coupled plasma etching machine based on semiconductor device manufacturing according to claim 1, characterized in that, The cleaning mechanism includes: The electric slide rail is fixedly installed at the bottom of the top seat and located outside the second connecting seat. The electric slide rail has a ring-shaped design. The sliding end of the electric slide rail is fixedly provided with a fixed seat. The bottom of the fixed seat is provided with a third slide groove. The third slide groove contains a third slider. The bottom of the third slider is fixedly provided with a curved plate. A guide rod is fixedly installed on the inner walls of both sides of the third slide groove. The first electromagnet and the second electromagnet are respectively fixedly installed on the side wall of the third slider and the inner side wall of the third slide groove. The guide rod passes through the third slider, the first electromagnet and the second electromagnet. A second spring is sleeved on the side of the guide rod away from the first electromagnet.
8. The inductively coupled plasma etching machine for semiconductor device manufacturing according to claim 7, characterized in that, The cleaning mechanism also includes: The first cleaning seat is fixedly located at the bottom of the curved plate on the side away from the third slider; Clamping plates are fixedly installed on the inner side wall of the etching chamber and are arranged at intervals. Each clamping plate has a push rod fitted on its side wall. A second cleaning seat is fixedly installed at the end of the push rod that is close to each other, and a baffle is fixedly installed at the end of the push rod that is far from each other. A third spring is fitted on the side wall of the push rod between the clamping plate and the baffle. A first conduit and a second conduit are fixedly installed at intervals inside the first cleaning seat and the second cleaning seat, respectively. A third conduit and a fourth conduit are fixedly installed at the water inlet end of the first conduit and the second conduit, respectively. Both the third conduit and the fourth conduit extend to the outside of the etching chamber.
9. The inductively coupled plasma etching machine for semiconductor device manufacturing according to claim 8, characterized in that, The cleaning mechanism also includes: The first card plate is fixedly installed on the outer wall of the etching chamber. The inner wall of the first card plate is fitted with a first toothed plate extending into the etching chamber. The first toothed plate is slidably connected to the side wall of the etching chamber. The side wall of the first toothed plate located outside the etching chamber is fixedly fitted with a second card plate. The side wall of the first toothed plate located between the first card plate and the second card plate is fitted with a fourth spring. The first gear is rotatably mounted on the inner wall of the etching chamber and meshes with the first toothed plate. The inner wall of the etching chamber is rotatably mounted with a second gear. The second gear and the first gear are connected by a transmission mechanism. The second toothed plate is slidably disposed on the side wall of the etching chamber. The top of one end of the second toothed plate inside the etching chamber meshes with the second gear. A frame is fixedly disposed at one end of the second toothed plate inside the etching chamber. The frame has a U-shaped design, and inclined plates are fixedly disposed on the inner side of the frame.
10. A method for using an inductively coupled plasma etching machine for semiconductor device manufacturing, characterized in that, Using the inductively coupled plasma etching machine based on semiconductor device manufacturing as described in any one of claims 1-9, the method includes the following steps: S1: Place the semiconductor device to be etched on top of the electrostatic chuck. Then, a cylindrical structure formed by the first plate, the second plate, the third plate and the fourth plate is placed over the outside of the semiconductor device to seal the space where the semiconductor device is located. S2: After the semiconductor device is sealed, plasma gas is used to vertically bombard the surface of the semiconductor device under the action of the first electrode, the second electrode and the etching machine body to etch the semiconductor device. S3: After etching of the semiconductor device is completed, the inner sides of the first plate, second plate, third plate and fourth plate are cleaned by the cleaning mechanism to assist in the next etching.