A short-wave infrared photodetector and method of manufacturing the same

Abstract

The application discloses a short-wave infrared photoelectric detector and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate structure; the substrate structure comprises a silicon substrate, a buried oxygen layer and a first doped layer which are arranged in a stack mode, and the first doped layer is a germanium layer with a first conductive type; growing an intrinsic germanium layer by homoepitaxy on the side of the first doped layer in the substrate structure away from the buried oxygen layer to form an absorption layer; growing a silicon germanium tin alloy material layer by heteroepitaxy on the side of the absorption layer away from the substrate structure to form a second doped layer; the second doped layer has a second conductive type, and the second conductive type is opposite to the first conductive type; etching and passivation treatment are performed on the second doped layer to form a groove and a passivation layer; a first electrode and a second electrode are formed on the passivation layer; the first electrode is electrically connected with the first doped layer; and the second electrode is electrically connected with the second doped layer. The embodiment of the application can effectively reduce the dark current of the germanium-based short-wave infrared detector and simplify the manufacturing process.

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