Micro-nano LED pixel forming structure and method based on reconfigurable interface

Abstract

The application discloses a micro-nano LED pixel forming structure and method based on a reconfigurable interface. The structure comprises a light emitter layer, a pixel definition interface system and a driving substrate which are sequentially stacked. The pixel definition interface system comprises at least one reconfigurable interface layer which can change physical properties or rearrange structure in a local area under external stimulation to form an activated state area with changed electrical characteristics. The area corresponds to a local electrical connection structure on the driving substrate, thereby establishing effective electrical connection between the light emitter layer and the driving substrate. The corresponding local area of the light emitter layer, the activated state area and the electrical connection structure jointly constitute an independent pixel unit. The reconfigurable interface layer can define pixels through external stimulation after the overall structure is formed, avoiding the need for pre-patterning of the light emitter layer and high-precision mass transfer in traditional technologies, significantly reducing manufacturing complexity and providing flexibility for dynamic reconfiguration of pixel distribution.

Description

Technical Field

[0001] This invention relates to the field of display and optoelectronic device technology, and in particular to a micro-nano LED pixel formation structure and method based on a reconfigurable interface. Background Technology

[0002] With the rapid development of miniaturization and high-resolution display technologies, micro- and nano-LED display devices, due to their high brightness, high contrast, high response speed, and good reliability, have shown broad application prospects in near-eye displays, micro-displays, and novel optoelectronic systems. In these types of displays and optoelectronic devices, the pixel unit, as the basic functional unit for realizing image display and light signal modulation, has a significant impact on the device's resolution, manufacturing complexity, and system integration performance through its formation method and driving structure.

[0003] Existing micro / nano LED display devices typically construct pixel arrays at the emitter layer or emitter chip level, and connect them to corresponding pixel-level driving structures in the driving substrate to achieve independent driving of pixel units. This approach, while enabling pixel addressing, often relies on sophisticated micro / nano fabrication, bonding, or interconnection processes to achieve high-precision integration between the emitter and the driving circuitry. As pixel sizes continue to shrink and display resolutions continue to increase, the aforementioned pixel formation and integration methods are facing increasing challenges in terms of manufacturing complexity, process consistency, and system yield.

[0004] To improve the electrical or optical coupling performance between the light emitter and the driving substrate, existing technologies have attempted to introduce intermediate layers or interface structures between them to enhance connection reliability or compensate for device performance. However, these intermediate layers primarily play a passive role, their functions limited to physical bonding, stress buffering, improving light extraction, or providing a fixed electrical conduction path. Their interface state remains static after device integration, cannot be actively controlled during device operation, and cannot participate in the dynamic definition process of the "pixel," the basic functional unit. Therefore, existing micro-nano LED display technologies urgently need a revolutionary pixel formation and driving paradigm to break free from the dependence on ultra-high precision pre-patterning and complex integration, fundamentally solving the problems of manufacturing complexity, yield, and cost, while simultaneously endowing the pixel structure with unprecedented reconfigurability and flexibility. Summary of the Invention

[0005] In view of the aforementioned deficiencies of the prior art, the technical problem to be solved by the present invention is to provide a micro / nano LED pixel formation structure and method based on a reconfigurable interface.

[0006] To achieve the above objectives, the first aspect of the present invention discloses a micro / nano LED pixel forming structure based on a reconfigurable interface, the micro / nano LED pixel forming structure comprising: A light-emitting layer, wherein the light-emitting layer is used to generate light radiation output under corresponding driving conditions; A pixel-defined interface system, comprising at least one reconfigurable interface layer, wherein the reconfigurable interface layer is configured to undergo physical property changes or structural rearrangement in local areas under the action of external stimuli, thereby forming distinguishable active and inactive regions. A driving substrate, the driving substrate including a plurality of local electrical connection structures for outputting driving signals; The light-emitting layer, the reconfigurable interface layer, and the driving substrate are stacked sequentially. The reconfigurable interface layer forms multiple activated regions under external stimulation. The activated regions correspond to the local electrical connection structures of the driving substrate. The electrical conductivity, interface contact state, or electrical impedance of the activated regions change, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer and the driving substrate. Thus, the activated regions, the local regions of the light-emitting layer, and the local electrical connection structures located in the same region and corresponding to each other constitute an independently addressable and drivable pixel unit.

[0007] Optionally, the reconfigurable interface layer is configured to form the activated region in the corresponding stimulated region and the inactive region in the unstimulated region under the action of external stimuli.

[0008] Optionally, the external stimulus is a stimulus source capable of inducing an interface state transition in the reconfigurable interface layer, including light field stimulation, magnetic field stimulation, temperature gradient, mechanical stress field, electric field stimulation, acoustic stimulation, or a combination thereof.

[0009] Optionally, the light-emitting layer is a thin film or wafer layer that is entirely continuous and has no pre-patterned pixel structure; the light-emitting layer is a light-emitting layer that is photoluminescent, electroluminescent, or field-luminescent, and is formed from at least one of inorganic semiconductor light-emitting materials, organic light-emitting materials, quantum dot light-emitting materials, perovskite light-emitting materials, or two-dimensional material light-emitting materials.

[0010] Optionally, the reconfigurable interface layer includes organic materials, inorganic materials, composite materials, or combinations thereof, and contains doped phases, filler phases, or functional components for achieving interface state regulation.

[0011] Optionally, the driving substrate is a circuit substrate for pixel addressing and driving, including a CMOS driving substrate, a TFT driving substrate, or other driving circuit structures that can realize independent pixel-level driving.

[0012] Optionally, the reconfigurable interface layer is disposed on one side opposite to the light-emitting layer and the driving substrate, and the reconfigurable interface layer is disposed on the light-emitting layer, or on the driving substrate, or on both the light-emitting layer and the driving substrate.

[0013] Optionally, each pixel unit corresponds one-to-one with the active state region and the local electrical connection structure.

[0014] Optionally, the interface state transition of the reconfigurable interface layer exhibits nonlinear or threshold response characteristics, such that the range of the activated region is limited by the focusing accuracy or energy threshold of the external stimulus.

[0015] A second aspect of this invention discloses a method for forming micro / nano LED pixels based on a reconfigurable interface, used in the aforementioned micro / nano LED pixel formation structure based on a reconfigurable interface, comprising: A light-emitting layer and a driving substrate are obtained, and a reconfigurable interface layer is prepared on one side of the light-emitting layer and / or the driving substrate; wherein the driving substrate includes a plurality of local electrical connection structures for outputting driving signals; The light-emitting layer, the reconfigurable interface layer, and the driving substrate are sequentially bonded together to form a composite structure of undefined pixels; A patterned external stimulus is applied to the reconfigurable interface layer of the laminated composite structure, thereby selectively forming multiple activated regions in the reconfigurable interface layer that exhibit changes in electrical conductivity, interface contact state, or electrical impedance. These activated regions correspond to the local electrical connection structures of the driving substrate, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer and the driving substrate. This allows the activated regions, the local regions of the light-emitting layer, and the local electrical connection structures, all located in the same region and corresponding to each other, to collectively constitute an independent pixel unit.

[0016] The beneficial effects of this invention are as follows: 1. Traditional technologies rely on high-precision pre-patterning of the light-emitting layer and massive precision bonding with the driving backplane, resulting in extremely complex processes and significant yield bottlenecks. This invention, by introducing a reconfigurable interface layer, transforms pixel definition from "physical manufacturing" to "post-programming." The light-emitting layer can be a continuous, unpatterned thin film, eliminating the need for micro / nano etching to isolate pixels, as well as ultra-high precision transfer and interconnection, thereby significantly reducing manufacturing complexity, equipment barriers, and costs. It also fundamentally avoids yield problems caused by alignment deviations and micro-connection failures, providing a new path for large-scale, low-cost manufacturing of micro / nano LED displays. 2. The formation of pixel units in this invention depends on the dynamic creation of active-state regions in the reconfigurable interface layer. Their position and state can be controlled by external stimuli, which is beneficial for improving the flexibility and reconfigurability of pixel formation. 3. This invention does not rely on specific light-emitting material systems (such as inorganic LEDs, quantum dots, perovskites, etc.) or specific types of driving backplanes (CMOS, TFT, etc.); its core lies in the functional realization of the reconfigurable interface layer. This layer can be integrated as a general-purpose module compatible with existing mature display technologies, which is conducive to achieving functional upgrades and performance leaps on traditional technology platforms and accelerating the industrialization of the technology. 4. This invention provides a brand-new technical path for realizing ultra-high resolution, large-area uniform display, and novel multifunctional integrated optoelectronic systems, and has good application prospects in display, light emission, and related optoelectronic systems.

[0017] In summary, this invention not only provides a disruptive pixelation technology path that simplifies manufacturing and improves yield, but also creates a new paradigm of intelligent display hardware with software programmability, which has broad application prospects in ultra-high-definition displays, micro-displays, flexible electronics and functionally integrated optoelectronic devices. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a micro / nano LED pixel forming structure based on a reconfigurable interface, provided in a specific embodiment of the present invention. Figure 2 This is a flowchart illustrating a method for forming micro / nano LED pixels based on a reconfigurable interface, provided in a specific embodiment of the present invention. Figure 3 This is a schematic diagram of a pixel formation structure in a specific application of the present invention, in which a reconfigurable interface layer is disposed on one side of the light-emitting layer. Figure 4 This is a schematic diagram of a pixel formation structure in a specific application of the present invention, in which a reconfigurable interface layer is disposed on one side of a driving substrate. Figure 5 This is a schematic diagram of a pixel formation structure in a specific application of the present invention, in which a reconfigurable interface layer is disposed on one side of the light-emitting layer and the other side of the driving substrate. Figure 6This is a schematic diagram of the pixel unit formation structure in which a reconfigurable interface layer forms an active region in a local area, provided in a specific application of the present invention. Figure 7 This is a schematic diagram of a pixel unit formation structure in which multiple active-state regions are formed on a light-emitting layer, provided in a specific application of the present invention; Figure 8 This is a schematic diagram of a structure in which pixel units are selectively formed at different positions on a light-emitting layer, as provided in a specific application of the present invention. Detailed Implementation

[0019] This invention discloses a micro / nano LED pixel formation structure and method based on a reconfigurable interface. Those skilled in the art can refer to the content of this document and appropriately modify the technical details to achieve the desired implementation. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art and are considered to be included in this invention. The methods and applications of this invention have been described through preferred embodiments. Those skilled in the art can clearly modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit, and scope of this invention to implement and apply the technology of this invention.

[0020] The applicant's research revealed that in micro / nano LED displays and optoelectronic devices, the interface region between the light emitter and the driving substrate not only serves as a connection or transition, but its interface state itself has a significant impact on local driving response, energy coupling, and light emission behavior. Under different interface states, the response characteristics of this region to external stimuli differ, and it can exhibit distinguishable functional states under certain conditions.

[0021] Further research shows that when the physical properties or microstructure of the interface region undergoes local changes under external stimuli, a stable cooperative relationship can be formed between the changed region and the driving structure, thus exhibiting driving response characteristics that differ spatially from the surrounding region. Based on these characteristics, by controlling the interface state, the interface region can directly participate in the pixel unit formation process.

[0022] Based on the above understanding, embodiments of the present invention provide a micro / nano LED pixel formation structure based on a reconfigurable interface, such as... Figure 1 As shown, the micro / nano LED pixel formation structure includes: The light-emitting layer 100 is used to generate light radiation output under corresponding driving conditions; The pixel-defined interface system includes at least one reconfigurable interface layer 200, which is configured to undergo physical property changes or structural rearrangement in local areas under the action of external stimuli, thereby forming distinguishable active regions 400 and inactive regions. The driving substrate 300 includes a plurality of local electrical connection structures 301 for outputting driving signals; The light-emitting layer 100, the reconfigurable interface layer 200, and the driving substrate 300 are stacked sequentially. Under external stimulation, the reconfigurable interface layer 200 forms multiple activated regions 400. The activated regions 400 correspond to the local electrical connection structures 301 of the driving substrate 300. The electrical conductivity, interface contact state, or electrical impedance of the activated regions 400 change, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer 100 and the driving substrate 300. Thus, the activated regions 400, the local regions of the light-emitting layer 100, and the local electrical connection structures 301 located in the same region and corresponding to each other constitute a pixel unit that can be independently addressed and driven.

[0023] It should be noted that the core of this pixel formation structure lies in the synergistic effect of three functional layers. The uppermost light-emitting layer 100 is responsible for generating light radiation, the middle reconfigurable interface layer 200 is a key functional conversion layer whose physical properties can be locally altered under the influence of external signals, and the lowermost driving substrate 300 provides electrical signals. When a specific region of the interface layer is activated, its electrical properties change, thereby efficiently connecting the upper light-emitting region and the lower driving electrode at that local location, dynamically forming a pixel that can operate independently.

[0024] In this specific embodiment, the reconfigurable interface layer 200 is configured to form an activated region 400 in the corresponding stimulated region and an inactive region in the unstimulated region under the action of external stimuli.

[0025] It should be noted that the external stimulus exhibits high spatial selectivity, triggering a state transition in the interface layer only at the stimulated local location, forming a highly conductive activated region 400. The unstimulated areas, however, retain their original highly barrier state. This stark regional contrast is the foundation for achieving clear pixel definition.

[0026] In this specific embodiment, the external stimulus is a stimulus source that can induce an interface state transition in the reconfigurable interface layer 200, including light field stimulation, magnetic field stimulation, temperature gradient, mechanical stress field, electric field stimulation, acoustic stimulation, or a combination thereof.

[0027] It should be noted that a variety of stimulation sources can be used, including but not limited to focused light beams, specific electric or magnetic fields, localized temperature changes, mechanical pressure, or sound waves. This diversity provides flexible implementation schemes for pixel programming in different application scenarios, allowing the selection of the most suitable excitation method.

[0028] Furthermore, in one specific embodiment, the external stimulus is a light field stimulus. The reconfigurable interface layer 200 is composed of inorganic materials, organic photosensitive materials, or composite materials with photoresponsive properties, and is disposed on one side of the light emitter or between the light emitter and the driving substrate 300 in the form of a continuous interface structure.

[0029] Under spatially selective illumination, local areas of the reconfigurable interface layer 200 undergo changes in carrier distribution, interface barrier modulation, or microstructure rearrangement, altering the interface conductivity or electrical coupling conditions in that region. This results in the formation of an effective electrical connection or controllable conduction path between the interface layer 200 and the local electrical connection structure 301 of the driving substrate 300 at the corresponding location.

[0030] In one specific embodiment, the external stimulus is a local magnetic field stimulus. The reconfigurable interface layer 200 is composed of a composite material containing magnetically responsive particles, including but not limited to ferromagnetic or paramagnetic micro / nano particles, and is disposed between the light emitter and the driving substrate 300 in a continuous interface structure.

[0031] Under the influence of a magnetic field, magnetic response particles undergo orientation alignment, aggregation, or spatial distribution reconstruction in a local area of ​​the interface layer, thereby causing changes in the micro-contact morphology, electrical coupling state, or equivalent impedance of the interface. This results in a stable and distinguishable electrical activation state between the region and the local electrical connection structure 301 of the driving substrate 300, thus forming an independently drivable pixel unit.

[0032] In one specific embodiment, the external stimulus is a localized thermal stimulus. The reconfigurable interface layer 200 is made of a material with thermally induced phase transitions or changes in electrical conductivity, and is configured to correspond to the localized heating structure on the driving substrate 300 or the external heat source.

[0033] When the local temperature of the interface layer exceeds a preset threshold, the material undergoes changes in conductivity, interface phase transition, or carrier transport characteristics in the corresponding region, thereby modulating the electrical coupling conditions between the light emitter and the driving substrate 300, so that the region forms a driveable activation region, and together with the corresponding driving structure, constitutes a pixel unit.

[0034] In one specific embodiment, the external stimulus is a localized mechanical stress stimulus. The reconfigurable interface layer 200 is composed of an elastomeric material doped with conductive filler, and forms an interface morphology with microstructure undulations or a compressible structure at the interface.

[0035] Under mechanical stress, the interface layer deforms or changes its contact state in the stressed area, which modulates the effective contact area, electrical connection path or interface impedance of the area, thereby establishing or enhancing the electrical connection between the light emitter and the driving substrate 300, so that the area forms a pixel unit that can be driven independently.

[0036] In one specific embodiment, the external stimulus is an electric field stimulus, which is directly applied or indirectly induced by the driving substrate 300 and its local electrical connection structure 301. The reconfigurable interface layer 200 includes a composite interface material formed by nanostructure units with electric field orientation response characteristics and a conductive substrate.

[0037] Under the action of a local electric field, the nanostructure units undergo directional alignment or interface reconstruction in the corresponding region, which changes the interface contact state, electrical conductivity channel or equivalent resistance, thereby forming a controllable electrical conduction relationship between the nanostructure unit and the local electrical connection structure 301 of the driving substrate 300 in this region, and jointly forming an independently drivable pixel unit.

[0038] In one specific embodiment, the external stimulus is an acoustic stimulus. The reconfigurable interface layer 200 is made of piezoelectric material or acoustic-responsive composite material and is disposed between the light emitter and the driving substrate 300 in a continuous interface structure.

[0039] Under acoustic vibration, the interface material undergoes mechanical deformation, charge polarization, or local potential change in the corresponding area, thereby changing the interface contact state or electrical coupling conditions, so that the area and the driving substrate 300 form a distinguishable active state and constitute an independently driveable pixel unit.

[0040] In this specific embodiment, the light-emitting layer 100 is a thin film or wafer layer that is entirely continuous and has no pre-patterned pixel structure; the light-emitting layer 100 is a light-emitting layer 100 that is photoluminescent, electroluminescent or field-luminescent, and is formed of at least one of inorganic semiconductor light-emitting materials, organic light-emitting materials, quantum dot light-emitting materials, perovskite light-emitting materials or two-dimensional material light-emitting materials.

[0041] It should be noted that the light-emitting layer 100 itself is a continuous and uniform whole, without any pre-etched or separated independent pixel structures inside. It can be a thin film based on a variety of advanced light-emitting materials (such as quantum dots, perovskites, or traditional semiconductors) and works through mechanisms such as electroluminescence and photoluminescence. This continuous structure greatly simplifies the front-end fabrication process.

[0042] In this specific embodiment, the reconfigurable interface layer 200 includes organic materials, inorganic materials, composite materials or combinations thereof, and contains doped phases, filler phases or functional components for achieving interface state regulation.

[0043] It should be noted that the material composition of the reconfigurable interface layer 200 is the core of its function, and it can be made of organic polymers, inorganic compounds, or composites of both. By carefully designing dopants, nanofillers, or other functional components in the material, its sensitivity to external stimuli, transition rate, and electrical properties in the activated state can be precisely controlled.

[0044] In this specific embodiment, the driving substrate 300 is a circuit substrate for pixel addressing and driving, including a CMOS driving substrate 300, a TFT driving substrate 300, or other driving circuit structures that can realize independent pixel-level driving.

[0045] It should be noted that the driving substrate 300 is the control center of the system, and typically employs mature silicon-based CMOS integrated circuits or large-area TFT array backplane technology. Its core function is to provide pixel-level addressing and driving capabilities. Through precise circuit design, it can apply programming stimulation to specific locations on the upper interface layer and provide light-emitting driving current to the defined pixels.

[0046] In this specific embodiment, the reconfigurable interface layer 200 is disposed on the opposite side of the light-emitting layer 100 and the driving substrate 300. The reconfigurable interface layer 200 is disposed on the light-emitting layer 100, or on the driving substrate 300, or on the light-emitting layer 100 and the driving substrate 300.

[0047] It should be noted that the reconfigurable interface layer 200 has design flexibility in its placement within the device. It can be fabricated separately on the lower surface of the light-emitting layer 100, on the upper surface of the driving substrate 300, or simultaneously on both surfaces to form a functionally coupled interface layer. This flexibility facilitates integration using different process routes.

[0048] Furthermore, in a specific application process, such as Figure 3 As shown, the reconfigurable interface layer 200 can be disposed on the side of the light-emitting layer 100 facing the driving substrate 300.

[0049] In a specific application process, such as Figure 4 As shown, the reconfigurable interface layer 200 can be disposed on the side of the driving substrate 300 facing the light-emitting layer 100.

[0050] In a specific application process, such as Figure 5 As shown, a reconfigurable interface layer 200 can be provided on both the light-emitting layer 100 and the driving substrate 300 on opposite sides.

[0051] In this specific embodiment, each pixel unit corresponds one-to-one with the active state region 400 and the local electrical connection structure 301.

[0052] It should be noted that, under ideal operating conditions, each independently emitting pixel formed in this structure corresponds precisely to an active region 400 on the interface layer and a specific driving electrode on the driving substrate 300. This point-to-point correspondence is the foundation for ensuring accurate image display.

[0053] In this specific embodiment, the interface state transition of the reconfigurable interface layer 200 exhibits nonlinear or threshold response characteristics, such that the range of the active state region 400 is limited by the focusing accuracy or energy threshold of the external stimulus.

[0054] It should be noted that the state transition process of the interface layer has a non-linear threshold characteristic; the transition only occurs when the energy or intensity of the external stimulus exceeds a critical value. This characteristic allows for precise control of the activation region's extent, and its size and edge sharpness directly depend on the focusing accuracy of the stimulus, thus providing a physical guarantee for achieving ultra-high resolution pixel definition.

[0055] In a specific application, such as Figure 6 As shown, under external stimulation, the reconfigurable interface layer 200 forms an activated region 400 in a local area. The activated region 400 works in conjunction with the local electrical connection structure 301 in the driving substrate 300 to form independently driveable pixel units in the light-emitting layer 100.

[0056] In a specific application, such as Figure 7 As shown, by applying spatially selective external stimuli to the reconfigurable interface layer 200, it forms active regions 400 at multiple locations, thereby forming multiple independent pixel units on the same light-emitting layer 100.

[0057] In a specific application, such as Figure 8 As shown, by applying external stimuli with spatial selectivity, temporal selectivity, or sequential control to the reconfigurable interface layer 200, it is made to form an active region 400 only at a predetermined location, thereby selectively generating pixel units on the luminescent layer 100.

[0058] This invention also provides a method for forming micro / nano LED pixels based on a reconfigurable interface, used to fabricate the aforementioned micro / nano LED pixel structure based on a reconfigurable interface, such as... Figure 2 As shown, the method includes: Step S1: Obtain the light-emitting layer and the driving substrate, and prepare a reconfigurable interface layer on one side of the light-emitting layer and / or the driving substrate.

[0059] The driving substrate includes multiple local electrical connection structures for outputting driving signals.

[0060] Step S2: The light-emitting layer, the reconfigurable interface layer and the driving substrate are sequentially bonded together to form a composite structure of undefined pixels.

[0061] Step S3: Apply patterned external stimuli to the reconfigurable interface layer of the bonded composite structure to selectively form multiple activated regions in the reconfigurable interface layer that change electrical conductivity, interface contact state, or electrical impedance.

[0062] The activated state region corresponds to the local electrical connection structure of the driving substrate, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer and the driving substrate, so that the activated state region, the local region of the light-emitting layer and the local electrical connection structure in the same region together constitute an independent pixel unit.

[0063] It should be noted that the pixel formation method involves first fabricating a continuous light-emitting layer, a substrate with a driving circuit, and a functional interface material, and then integrating them into an undifferentiated composite structure. Subsequently, a programming signal with a specific pattern is applied to the interface layer via the driving circuit, selectively "writing" pixel connection points at desired locations. These activated connection points, together with the upper light-emitting material and the lower driving circuit, constitute a light-emitting pixel unit.

[0064] Traditional technologies rely on high-precision pre-patterning of the light-emitting layer and massive precision bonding with the driving backplane, resulting in extremely complex processes and significant yield bottlenecks. This invention, by introducing a reconfigurable interface layer, transforms pixel definition from "physical manufacturing" to "post-programming." The light-emitting layer can be a continuous, unpatterned thin film, eliminating the need for micro / nano etching to isolate pixels, as well as ultra-high precision transfer and interconnection. This significantly reduces manufacturing complexity, equipment barriers, and costs, and fundamentally avoids yield problems caused by alignment deviations and micro-connection failures, providing a new path for large-scale, low-cost manufacturing of micro / nano LED displays.

[0065] The formation of pixel units in this embodiment of the invention relies on the dynamic creation of active regions in the reconfigurable interface layer. Their positions and states can be controlled by external stimuli, which helps to improve the flexibility and reconfigurability of pixel formation.

[0066] The embodiments of this invention do not rely on specific light-emitting material systems (such as inorganic LEDs, quantum dots, perovskites, etc.) or specific types of driving backplanes (CMOS, TFT, etc.). The core lies in the functional implementation of the reconfigurable interface layer. This layer can be integrated as a general module compatible with existing mature display processes, which is conducive to achieving functional upgrades and performance leaps on traditional technology platforms, and accelerating the industrialization of the technology.

[0067] The embodiments of the present invention provide a new technical path for achieving ultra-high resolution, large-area uniform display and novel multifunctional integrated optoelectronic systems, and have good application prospects in display, light emission and related optoelectronic systems.

[0068] In summary, the embodiments of the present invention not only provide a disruptive pixelation technology path that simplifies manufacturing and improves yield, but also create a new paradigm of intelligent display hardware with software programmability, which has broad application prospects in the fields of ultra-high-definition display, micro-display, flexible electronics and functionally integrated optoelectronic devices.

[0069] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0070] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0071] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A micro / nano LED pixel formation structure based on a reconfigurable interface, characterized in that, The micro / nano LED pixel forming structure includes: A light-emitting layer, wherein the light-emitting layer is used to generate light radiation output under corresponding driving conditions; A pixel-defined interface system, comprising at least one reconfigurable interface layer, wherein the reconfigurable interface layer is configured to undergo physical property changes or structural rearrangement in local areas under the action of external stimuli, thereby forming distinguishable active and inactive regions. A driving substrate, the driving substrate including a plurality of local electrical connection structures for outputting driving signals; The light-emitting layer, the reconfigurable interface layer, and the driving substrate are stacked sequentially. The reconfigurable interface layer forms multiple activated regions under external stimulation. The activated regions correspond to the local electrical connection structures of the driving substrate. The electrical conductivity, interface contact state, or electrical impedance of the activated regions change, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer and the driving substrate. Thus, the activated regions, the local regions of the light-emitting layer, and the local electrical connection structures located in the same region and corresponding to each other constitute an independently addressable and drivable pixel unit.

2. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The reconfigurable interface layer is configured to form the activated region in the corresponding stimulated region and the inactivated region in the unstimulated region under the action of external stimuli.

3. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The external stimulus is a stimulus source capable of inducing an interface state transition in the reconfigurable interface layer, including light field stimulation, magnetic field stimulation, temperature gradient, mechanical stress field, electric field stimulation, acoustic stimulation, or a combination thereof.

4. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The light-emitting layer is a thin film or wafer layer that is entirely continuous and has no pre-patterned pixel structure; the light-emitting layer is a light-emitting layer that is photoluminescent, electroluminescent, or field-luminescent, and is formed by at least one of inorganic semiconductor light-emitting materials, organic light-emitting materials, quantum dot light-emitting materials, perovskite light-emitting materials, or two-dimensional material light-emitting materials.

5. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The reconfigurable interface layer includes organic materials, inorganic materials, composite materials, or combinations thereof, and contains doped phases, filler phases, or functional components for achieving interface state regulation.

6. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The driving substrate is a circuit substrate used for pixel addressing and driving, including a CMOS driving substrate, a TFT driving substrate, or other driving circuit structures that can realize independent pixel-level driving.

7. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The reconfigurable interface layer is disposed on one side opposite to the light-emitting layer and the driving substrate. The reconfigurable interface layer is disposed on the light-emitting layer, or on the driving substrate, or on both the light-emitting layer and the driving substrate.

8. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, Each pixel unit corresponds one-to-one with the active state region and the local electrical connection structure.

9. The micro / nano LED pixel formation structure based on a reconfigurable interface according to claim 1, characterized in that, The interface state transitions of the reconfigurable interface layer exhibit nonlinear or threshold response characteristics, such that the range of the activated region is limited by the focusing accuracy or energy threshold of the external stimulus.

10. A method for forming micro / nano LED pixels based on a reconfigurable interface, characterized in that, The method for fabricating the micro / nano LED pixel formation structure based on a reconfigurable interface as described in claim 1 includes: A light-emitting layer and a driving substrate are obtained, and a reconfigurable interface layer is prepared on one side of the light-emitting layer and / or the driving substrate; wherein the driving substrate includes a plurality of local electrical connection structures for outputting driving signals; The light-emitting layer, the reconfigurable interface layer, and the driving substrate are sequentially bonded together to form a composite structure of undefined pixels; Patterned external stimuli are applied to the reconfigurable interface layer of the laminated composite structure to selectively form multiple activated regions in the reconfigurable interface layer, where the electrical conductivity, interface contact state, or electrical impedance changes. These activated regions correspond to the local electrical connection structures of the driving substrate, thereby establishing a drivable electrical connection or coupling relationship between the light-emitting layer and the driving substrate. This allows the activated regions, the local regions of the light-emitting layer, and the local electrical connection structures, all corresponding to each other in the same region, to collectively constitute an independent pixel unit.

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