Substrate support assembly and substrate processing apparatus including the same

Abstract

Disclosed are a substrate support assembly and a substrate processing apparatus including the same. The present application provides a substrate support assembly and a substrate processing apparatus including the same, which can minimize stray capacitance due to a bias electrode. A substrate support assembly supporting a substrate in a substrate processing apparatus using plasma according to the present application includes a support plate supporting the substrate from below, a bias electrode layer embedded in an inner portion of the support plate to which a pulse signal is applied, and a base plate disposed below the support plate to which an RF (radio frequency) signal is applied. An air layer is formed between the support plate and the base plate.

Description

Technical Field

[0001] The present invention relates to a substrate support assembly for supporting a substrate in a system for processing a substrate using plasma, and a substrate processing apparatus including the substrate support assembly. Background Technology

[0002] Semiconductor (or display) manufacturing processes are processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these various manufacturing processes, semiconductor manufacturing equipment is located in the cleanroom of a semiconductor manufacturing plant, which performs the processing of the substrates that are fed into the semiconductor manufacturing equipment.

[0003] Plasma-based processes are widely used in semiconductor manufacturing, such as etching and vapor deposition. Plasma processing is performed by placing a substrate in the lower part of a plasma processing space and applying RF (radio frequency) signals through electrodes located at the upper and lower parts, along with a supply of fluid for plasma processing.

[0004] In a plasma-based substrate processing apparatus, a bias power is applied to a substrate support assembly for plasma processing, along with RF power used to generate the plasma, to maintain an appropriate voltage for regulating ion energy during plasma processing. The bias electrode for applying the bias power is primarily embedded in a support plate made of dielectric material supporting the substrate. A substrate plate, acting as a lower electrode for generating the RF power, is disposed below the support plate; however, stray capacitance between the substrate plate and the bias electrode may interfere with the bias signal or the RF signal. Summary of the Invention

[0005] The present invention provides a substrate support assembly that can minimize stray capacitance caused by bias electrodes, and a substrate processing apparatus including the substrate support assembly.

[0006] In the plasma-based substrate processing apparatus according to the present invention, the substrate support assembly supporting the substrate includes: a support plate supporting the substrate from below; a bias electrode layer embedded within the support plate to be applied with a pulse signal; and a substrate plate disposed below the support plate to be applied with an RF (radio frequency) signal. An air layer is formed between the support plate and the substrate plate.

[0007] The plasma-based substrate processing apparatus according to the present invention includes: a cavity forming a processing space for a substrate; a substrate support assembly located at the lower part of the cavity; and a power supply module electrically connected to the substrate support assembly. The substrate support assembly includes: a support plate supporting the substrate from below; a bias electrode layer embedded within the support plate; and a substrate plate disposed below the support plate. An air layer is formed between the support plate and the substrate plate. The power supply module includes: a bias power supply electrically connected to the bias electrode layer; and an RF power supply electrically connected to the substrate plate.

[0008] The plasma-based substrate processing apparatus according to the present invention includes: a cavity forming a processing space for a substrate; a substrate support assembly located at the lower part of the cavity; and a power supply module electrically connected to the substrate support assembly. The substrate support assembly includes: a support plate supporting the substrate from below; a bias electrode layer embedded within the support plate; a base plate disposed below the support plate; and an edge electrode ring disposed around the periphery of an edge region of the substrate. An air layer is formed between the support plate and the base plate. The power supply module includes: a first bias power supply electrically connected to the bias electrode layer; an RF power supply electrically connected to the base plate; and a second bias power supply electrically connected to the edge electrode ring.

[0009] According to the present invention, by forming an air layer between a support plate and a substrate plate in which a bias electrode layer is embedded, the stray capacitance between the bias electrode layer and the substrate plate can be minimized. Attached Figure Description

[0010] Figure 1 A simplified structure of the substrate processing apparatus according to the present invention is shown.

[0011] Figure 2 The structure of a substrate support assembly in a substrate processing apparatus according to an embodiment of the present invention is shown.

[0012] Figure 3 The path from the bias power source to the plasma is modeled using circuits.

[0013] Figure 4a , Figure 4b , Figure 4c This is a diagram used to illustrate the capacitance based on the structure of the support plate and the base plate.

[0014] Figure 5 The bottom surface of the support plate is shown in a substrate support assembly according to an embodiment of the present invention.

[0015] Figure 6 The structure of a substrate support assembly in which a third support is formed between a first support and a second support in a support plate is shown.

[0016] Figure 7 Show Figure 6 The bottom surface of the support plate.

[0017] Figure 8 The structure of a substrate support assembly including an edge electrode ring embedded in the edge of a support plate is shown.

[0018] Figure 9 The diagram shows a structure of a substrate support assembly including an edge electrode ring embedded in the edge of a support plate and a third support formed in the support plate between a first support and a second support.

[0019] (Explanation of reference numerals in the attached diagram)

[0020] 10: Substrate processing apparatus

[0021] 100: Cavity

[0022] 200: Substrate support assembly

[0023] 210: Support plate

[0024] 212: Adsorption electrode layer

[0025] 214: Bias electrode layer

[0026] 220: Base plate

[0027] 260: Focusing ring

[0028] 270: Edge electrode ring

[0029] 300: Nozzle assembly

[0030] 400: Gas Supply Unit

[0031] 500: Power Module

[0032] 510: First bias power supply

[0033] 520: RF power supply

[0034] 530: Second bias power supply

[0035] 540: DC power supply

[0036] 600: Baffle unit

[0037] 710: Cooling fluid supply source

[0038] 720: Fluid supply source for temperature control

[0039] 900: Air layer Detailed Implementation

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0041] To clearly illustrate the present invention, parts unrelated to the description have been omitted, and the same or similar constituent elements are marked with the same reference numerals throughout the specification.

[0042] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0043] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.

[0044] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless explicitly defined in this application.

[0045] Figure 1 A simplified structure of the substrate processing apparatus 10 according to the present invention is shown. The substrate processing apparatus 10 processes the substrate W using plasma. The substrate processing apparatus 10 includes a cavity 100, a substrate support assembly 200, a nozzle assembly 300, a gas supply unit 400, a power supply module 500, and a baffle unit 600.

[0046] The cavity 100 has a processing space 102 inside for performing substrate processing processes. The cavity 100 is provided in a closed shape. The cavity 100 may be provided with a conductive material. For example, the cavity 100 may be provided with a material containing metal. The cavity 100 may be provided with aluminum. The cavity 100 may be grounded. An exhaust port 104 is formed on the bottom surface of the cavity 100. The exhaust port 104 is connected to an exhaust line 106. The exhaust line 106 is connected to a pump (not shown). Reaction byproducts generated during the process and gases remaining in the internal space of the cavity 100 can be discharged to the outside through the exhaust line 106. The internal pressure of the cavity 100 is reduced to a predetermined pressure through the exhaust process. In contrast, a separate pressure reducing component (not shown) may be provided to reduce the internal pressure of the processing space 102 to a predetermined pressure.

[0047] A heater (not shown) is provided on the wall of the cavity 100. The heater heats the wall of the cavity 100. The heater is electrically connected to a heating power source (not shown). The heater generates heat by resisting the current applied from the heating power source. The heat generated by the heater is transferred to the internal space. The processing space is maintained at a predetermined temperature by the heat generated by the heater. The heater is provided with a hot wire in the shape of a coil. Multiple heaters may be provided on the wall of the cavity 100.

[0048] Gasket 110 prevents damage to the inner wall of cavity 100 during the process. Gasket 110 prevents impurities generated during the process from depositing on the inner wall. Gasket 110 may be made of aluminum. Gasket 110 protects the inner surface of cavity 100. During the ignition of process gas, an electric arc discharge may occur inside cavity 100. The electric arc discharge can damage cavity 100. Gasket 110 protects the inner surface of cavity 100 and prevents damage to the inner surface of cavity 100 due to the electric arc discharge.

[0049] A substrate support assembly 200 is disposed inside the cavity 100. The substrate support assembly 200 supports the substrate W within the processing space 102. The substrate support assembly 200 can provide an electrostatic chuck for adsorbing the substrate W using electrostatic force. The substrate support assembly 200 may include a support plate 210, a base plate 220, an insulating plate 230, a lower cover 240, a lower support plate 250, a focusing ring 260, an edge electrode ring 270, an edge cover ring 275, and an insulating ring 280.

[0050] Figure 2 The structure of the substrate support assembly 200 in the substrate processing apparatus 10 according to an embodiment of the present invention is shown. Figure 2 enlarge Figure 1 Part A shows the structure of the substrate support assembly 200 with the substrate W removed.

[0051] A substrate W is placed on top of a support plate 210. The support plate 210 is provided in a circular plate shape. The support plate 210 may be made of a dielectric substance. The support plate 210 may be made of a ceramic material.

[0052] An adsorption electrode layer 212 for adhering the substrate W to the support plate 210 using electrostatic force is embedded inside the support plate 210. The adsorption electrode layer 212 is a disc made of metallic material. The adsorption electrode layer 212 is electrically connected to a DC power supply 540. The adsorption electrode layer 212 can be connected to the DC power supply 540 via a DC power cable 542. Electrostatics are generated on the substrate W by the DC voltage supplied from the DC power supply 540 to the adsorption electrode layer 212. In addition, a heater layer (not shown) for heating the substrate W can be disposed inside the support plate 210.

[0053] A bias electrode layer 214 is embedded inside the support plate 210. The bias electrode layer 214 is a disk made of metallic material. The bias electrode layer 214 is electrically connected to a first bias power supply 510. The bias electrode layer 214 can be connected to the first bias power supply 510 via a first bias power supply cable 512. Alternatively, a bias voltage provided from the first bias power supply 510 can be applied to the bias electrode layer 214, and the voltage used for adjusting ion energy during plasma processing can be maintained inside the cavity 100.

[0054] A substrate 220 is provided below the support plate 210. The substrate 220 may be in a circular plate shape. The substrate 220 is made of a conductive material. The substrate 220 may be made of aluminum (Al). Cooling fluid passages 222 and temperature regulating fluid passages 224 may be formed inside the substrate 220. The substrate 220 may be connected to an RF power supply 520 via an RF power cable 522. Alternatively, an RF voltage supplied from the RF power supply 520 may be applied to the substrate 220 to generate plasma. An RF filter that blocks signals of specific components and an impedance matching circuit that regulates the RF power transmitted to the plasma may be connected to the output of the RF power supply 520.

[0055] The refrigerant used for cooling the substrate W can flow through the cooling fluid passage 222. The cooling fluid can be supplied from the cooling fluid supply source 710 to the cooling fluid passage 222 through the cooling fluid supply pipe 712.

[0056] A heat transfer fluid can be flowed throughout the substrate W via the temperature-regulating fluid passage 224 to maintain a uniform temperature distribution. An inert gas (e.g., He) can be used as the heat transfer fluid. The heat transfer fluid can be supplied from the temperature-regulating fluid supply source 720 to the temperature-regulating fluid passage 224 via the temperature-regulating fluid supply pipe 722.

[0057] An insulating plate 230 is disposed below a base plate 220. The insulating plate 230 is made of an insulating material. A lower cover 240 supports the insulating plate 230. The lower cover 240 may be provided to contact the lower edge of the insulating plate 230. The lower cover 240 may have a cylindrical shape that is open at the top and bottom. The lower cover 240 may be made of an insulating material. A lower support plate 250 is disposed below the lower cover 240. The lower support plate 250 is disposed below the lower cover 240 and supports the lower cover 240.

[0058] A ring assembly consisting of multiple rings is disposed at the edge of the substrate support assembly 200. The ring assembly includes a focusing ring 260, an edge electrode ring 270, an edge cover ring 275, and an insulating ring 280.

[0059] A focusing ring 260 is provided to surround the support plate 210. The focusing ring 260 may be made of silicon to concentrate ions generated during the plasma processing onto the substrate W. An insulating ring 280 is formed on the outside of the focusing ring 260 and is provided to surround the focusing ring 260. The insulating ring 280 may be made of quartz.

[0060] The edge electrode ring 270 can be made of an electrically conductive metallic material. The edge electrode ring 270 can be electrically connected to a second bias power supply 530 via a second bias power cable 532. The second bias power supply 530 can provide bias power to the edge electrode ring 270. By applying bias power to the edge electrode ring 270, the second bias power supply 530 can regulate the ion energy in the edge region of the substrate W.

[0061] An edge cover ring 275 is provided to surround the edge electrode ring 270. The edge cover ring 275 may be made of an insulating material. The edge cover ring 275 is located below the focusing ring 260. An insulating ring 280 is disposed on the outer side of the edge cover ring 275. The insulating ring 280 electrically insulates the periphery of the ring assembly while surrounding the outer side of the substrate support assembly 200.

[0062] The nozzle 320 is located above the substrate support assembly 200. The nozzle 320 is positioned below the gas distribution plate 310. The nozzle 320 can be provided as a plate with a fixed or variable thickness. The cross-section of the nozzle 320 can be provided to have the same shape and cross-sectional area as the support plate 210. A plurality of gas supply holes 322 are formed in the nozzle 320. The gas supply holes 322 can be formed vertically through the top and bottom of the nozzle 320. The nozzle 320 can be grounded.

[0063] A gas distribution plate 310 is disposed above the nozzle 320. The gas distribution plate 310 can be attached to the top of the cavity 100. The gas distribution plate 310 allows the gas supplied from above to diffuse. A gas inlet hole 312 can be formed in the gas distribution plate 310. The gas inlet hole 312 can be formed at a position corresponding to the aforementioned gas supply hole 322. The gas inlet hole 312 can communicate with the gas supply hole 322. Gas supplied from above the nozzle assembly 300 can sequentially pass through the gas inlet hole 312 and the gas supply hole 322 to the bottom of the nozzle 320. The gas distribution plate 310 can be made of a metallic material. An upper ring 330 is configured to surround the nozzle 320 and the periphery of the gas distribution plate 310. The upper ring 330 can be provided as an overall circular ring shape. The upper ring 330 can be made of quartz material.

[0064] The gas supply unit 400 supplies gas into the cavity 100. The gas supplied by the gas supply unit 400 can be excited into a plasma state by a plasma source. The gas supply unit 400 includes a gas supply source 410, a gas supply line 420, and a gas supply port 430. The gas supply port 430 is located at the upper center of the cavity 100. The gas supply port 430 supplies process gas to the gas distribution plate 310. The gas supply line 420 connects the gas supply port 430 and the gas supply source 410. The gas supply line 420 supplies the process gas stored in the gas supply source 410 to the gas supply port 430. A valve (not shown) can be installed on the gas supply line 420. The valve can open and close the gas supply line 420 to regulate the flow rate of the process gas supplied through the gas supply line 420.

[0065] The power module 500 provides the necessary power to the electrodes of the substrate processing apparatus 10. The power module 500 may include a first bias power supply 510 connected to the bias electrode layer 214, an RF power supply 520 connected to the substrate 220, a second bias power supply 530 connected to the edge electrode ring 270, and a DC power supply 540 connected to the adsorption electrode layer 212. The first bias power supply 510 and the second bias power supply 530 can output non-sinusoidal voltages. The non-sinusoidal wave can be a signal other than a sinusoidal wave, such as a square wave, a sawtooth wave, a triangle wave, or a combination thereof. A non-sinusoidal wave can be generated by combining multiple sinusoidal waves. A non-sinusoidal wave can be a DC pulse signal with a frequency lower than that of the signal output by the RF power supply 520. The RF power supply 520 can output a voltage in the form of a sinusoidal wave. The signal output by RF power supply 520 can have a higher frequency than the signals output by first bias power supply 510 and second bias power supply 530, thereby controlling plasma density. DC power supply 540 can output a DC voltage. Switches for controlling on / off states can be configured at the output terminals of first bias power supply 510, RF power supply 520, second bias power supply 530, and DC power supply 540. First bias power supply 510 and second bias power supply 530 can output synchronized non-sinusoidal voltages. However, the amplitudes (magnitudes) of the first non-sinusoidal wave output by first bias power supply 510 and the second non-sinusoidal wave output by second bias power supply 530 can be different. By making the amplitudes of the first non-sinusoidal wave output by first bias power supply 510 and the second non-sinusoidal wave output by second bias power supply 530 different, signal interference and arcing can be prevented. According to an embodiment, the first non-sinusoidal wave output by first bias power supply 510 and the second non-sinusoidal wave output by second bias power supply 530 can be asynchronous.

[0066] A baffle unit 600 is located between the inner wall of the cavity 100 and the substrate support assembly 200. The baffle unit 600 is provided in an annular shape. A plurality of through holes are formed in the baffle unit 600. Gas supplied to the cavity 100 is exhausted to the exhaust port 104 through the through holes of the baffle unit 600. The gas flow can be controlled according to the shape of the baffle unit 600 and the shape of the through holes.

[0067] The following describes the structure of the support plate 210 in the substrate support assembly 200 according to the present invention, which minimizes stray capacitance when the first bias power supply 510 supplies bias power to the bias electrode layer 214 in the support plate 210. When a bias voltage is applied to the bias electrode layer 214 embedded in the support plate 210, stray capacitance may be generated between the bias electrode layer 214 and the underlying substrate 220.

[0068] As a solution to reduce stray capacitance, increasing the spacing (D2+D3) between the bias electrode layer 214 and the substrate 220, i.e., increasing the thickness of the support plate 210, can reduce the stray capacitance itself. However, when the thickness of the support plate 210 increases, the temperature of the cooling fluid passage 222 of the substrate 220 may not be able to be smoothly transferred to the substrate W, and the thermal resistance from the substrate 220 to the substrate W may increase, making it difficult to control the surface temperature of the substrate W.

[0069] As another approach to reduce stray capacitance, an inductor (not shown) can be configured in the electrical path between the bias electrode layer 214 and the first bias power supply 510. One end of the inductor can be connected to the aforementioned electrical path, while the other end is grounded to shunt the current. The inductor can cancel stray capacitance between the bias electrode layer 214 and the underlying substrate 220; however, when the first bias power supply 510 and the RF power supply 520 are signals with a wide bandwidth, it has the disadvantage of only producing a cancellation effect in a specific frequency band.

[0070] According to the present invention, an air layer 900 may be formed between the support plate 210 and the base plate 220. The air layer 900 may refer to the cavity between the support plate 210 and the base plate 220. Compared with the case without the air layer 900, the stray capacitance of the bias electrode layer 214 embedded inside the support plate 210 and the base plate 220 can be reduced according to the present invention.

[0071] In the support plate 210, the bias electrode layer 214 can be disposed below the adsorption electrode layer 212 with a first interval d0. The first interval d0 is the vertical distance from the bottom of the adsorption electrode layer 212 to the top of the bias electrode layer 214. The bias electrode layer 214 can be disposed below the support plate 210 with a second interval d3. The second interval d3 is the vertical distance from the bottom of the bias electrode layer 214 to the bottom 210Aa of the circular plate 210A in the support plate 210.

[0072] An air layer 900 is formed between the support plate 210 and the base plate 220. The support plate 210 includes a circular plate 210A, a first support body 210B extending downward from the center of the circular plate 210A, and a second support body 210C extending downward from the edge of the circular plate 210A.

[0073] An adsorption electrode layer 212 and a bias electrode layer 214 are embedded inside a circular plate 210A. The circular plate 210A is a plate with a certain thickness. A first support 210B protrudes downward at the lower center of the circular plate 210A, and a second support 210C protrudes downward at the lower edge of the circular plate 210A. The first support 210B extends through the base plate 220 to the insulating plate 230. The lower surface 210Ba of the first support 210B can contact the upper surface of the insulating plate 230. The second support 210C extends to the base plate 220. The lower surface 210Ca of the second support 210C can contact the upper surface of the base plate 220. The second support 210C protrudes at a third interval d4, forming an air layer 900 between the support plate 210 and the base plate 220. The air layer 900 can be formed by the third interval d4.

[0074] Figure 3 The path for supplying bias power from the bias power supply 510 to the plasma is modeled using circuitry. Figure 3 In the middle, C line This refers to the capacitive component between the bias power supply 510 and the transmission line from the bias electrode layer 214 to ground. LC As a component of the capacitance between the bias electrode layer 214 and the substrate 220, it corresponds to the aforementioned stray capacitance. C UC This refers to the capacitance between the bias electrode layer 214 and the substrate W. p,i I refers to the current component representing the movement of a certain number of ions in the lower plasma sheath near the substrate W due to ion flux. p,e C refers to the current component representing the movement of electrons in the lower plasma sheath. p,sh This refers to the capacitance component within the plasma sheath. R P This refers to the resistivity component of plasma. g,i I refers to the current component representing the movement of a certain number of ions in the upper plasma sheath near nozzle 320 due to ion flux. g,e C refers to the current component representing the movement of electrons in the upper plasma sheath. g,sh This refers to the capacitive component in the upper plasma sheath. Grounding refers to the grounding connection to nozzle 320.

[0075] Figure 4a , Figure 4b , Figure 4cThe capacitor C is used to illustrate the structure based on the support plate 210 and the base plate 220. LC The image.

[0076] like Figure 4a As stated, when there is no air layer 900, the capacitance C between the bias electrode layer 214 and the substrate 220 is... LC Perform the calculation as shown in the mathematical formula below (Formula 1).

[0077]

Mathematical Formula 1

[0078]

[0079] In mathematical formula 1, ε r d1 is the dielectric constant of the support plate 210, d1 is the spacing between the lower part of the bias electrode layer 214 and the upper part of the substrate 220, and r is the radius of the bias electrode layer 214.

[0080] To reduce the capacitance C between the bias electrode layer 214 and the substrate 220 LC ,like Figure 4b As shown, it is possible to consider increasing the spacing d2 (d2>d1) between the bias electrode layer 214 and the substrate 220, as mentioned earlier, due to limitations in substrate W temperature control.

[0081] According to the present invention, such as Figure 4c As shown, when an air layer 900 is formed between the bias electrode layer 214 and the substrate 220, the capacitance C between the bias electrode layer 214 and the substrate 220 is... LC Perform the calculation as shown in the mathematical formula 2 below.

[0082]

Mathematical Formula 2

[0083]

[0084] In mathematical formula 2, ε r d3 is the dielectric constant of the support plate 210, d4 is the spacing between the bias electrode layer 214 and the lower surface 210Aa of the support plate 210, d5 is the thickness of the air layer 900 (i.e., the spacing between the lower surface 210Aa of the support plate 210 and the substrate 220), and r is the radius of the support plate 210. Compared with Equation 1, the capacitance C between the bias electrode layer 214 and the substrate 220 can be obtained through the air layer 900. LC The thickness of the support plate 210 is significantly reduced without increasing its thickness. d3 is a thickness greater than or equal to the thickness at which insulation failure of the support plate 210 does not occur, and d4 is a thickness greater than or equal to the thickness at which discharge does not occur in the air layer 900. With the capacitance C... LCThe total load seen from the first bias power supply 510 to the substrate processing apparatus 10 is significantly reduced, thus improving the transmission performance of the bias voltage applied to the bias electrode layer 214. Specifically, due to the reduced total load, the power consumption of the first bias power supply 510 is reduced, and the transition time of the pulsed bias voltage (including the conversion time between rise and fall times) is also reduced. In addition, by filling the air layer 900 with heat transfer fluid, the temperature of the cooling fluid passage 222 can be unblocked, improving the heat transfer efficiency between the support plate 210 and the substrate 220.

[0085] In the support plate 210, the lower part 210Aa of the space between the first support body 210B and the second support body 210C is in a state where it is not in contact with the base plate 220. An empty space with a third interval d4 can be formed between the lower part 210Aa of the support plate 210 and the upper part of the base plate 220, which is opposite to the lower part 210Aa of the support plate 210. The third interval d4 is the vertical distance between the lower part 210Aa of the support plate 210 and the upper part of the base plate 220.

[0086] Figure 5 The bottom surface of the support plate 210 in the substrate support assembly 200 according to an embodiment of the present invention is shown. (Refer to...) Figure 5 The first support body 210B at the center of the circular plate 210A of the support plate 210 is formed with a circular cross-section, and the second support body 210C at the edge of the circular plate 210A is formed in a circular direction along the circumference. A second fluid supply hole 216 through which heat transfer fluid can pass is formed in the circular plate 210A. The adsorption electrode layer 212 and the bias electrode layer 214 embedded inside the support plate 210 can form holes corresponding to the second fluid supply hole 216.

[0087] The temperature regulating fluid passage 224 is connected to the air layer 900 through a first fluid supply hole 226 formed in the substrate 220. The air layer 900 is connected to the upper space of the support plate 210 through a second fluid supply hole 216 formed in the support plate 210. That is, the heat transfer fluid can flow to the upper space of the support plate 210 (i.e., the lower space of the substrate W) through the temperature regulating fluid supply source 720, the temperature regulating fluid supply pipe 722, the temperature regulating fluid passage 224, the first fluid supply hole 226, the air layer 900, and the second fluid supply hole 216. A patterned protrusion 218 is formed on the upper surface of the support plate 210 to ensure that the heat transfer fluid flows uniformly into the lower space of the substrate W. In another embodiment, the temperature regulating fluid passage 224 can be omitted. In this case, the temperature regulating fluid supply pipe 722 and the first fluid supply hole 226 are directly connected.

[0088] The first support 210B extends downward from the lower center of the circular plate 210A. The first support 210B may be integrally formed with the circular plate 210A, or may be mounted on the circular plate 210A. The first support 210B may be inserted into an opening 220A formed at the center of the base plate 220. An opening 220A may be formed at the center of the circular base plate 220, and the first support 210B may be inserted into the opening 220A. The lower surface 210Ba of the first support 210B may contact or extend to the upper surface of the insulating plate 230. The diameter of the first support 210B may be equal to or smaller than the diameter of the opening 220A. The inner walls of the first support 210B and the opening 220A may abut against or be spaced apart from each other.

[0089] The first support 210B is formed around a first bias power cable 512 that connects the bias electrode layer 214 and the first bias power supply 510. Grooves for the first bias power cable 512 and the DC power cable 542 to pass through can be formed in the circular plate 210A of the support plate 210 and the first support 210B. The first bias power cable 512 and the DC power cable 542, embedded inside the first support 210B, can be connected to the first bias power supply 510 and the DC power supply 540 through the first support 210B and the insulating plate 230.

[0090] The second support 210C extends downward from the lower edge of the circular plate 210A. The second support 210C may be integrally formed with the circular plate 210A, or it may be mounted on the circular plate 210A. The second support 210C may be formed to contact the upper surface of the base plate 220. The support plate 210 can be supported on the base plate 220 by means of the second support 210C. The second support 210C may be formed in a circular shape at the edge of the support plate 210. The air layer 900 can be formed by the first support 210B, the circular plate 210A, and the second support 210C.

[0091] exist Figure 2 In the diagram, the air layer 900 is shown as being formed by the lower step of the support plate 210. However, the air layer 900 can also be formed by the upper step of the base plate 220. Alternatively, the air layer 900 can be formed by combining the lower step of the support plate 210 with the upper step of the base plate 220.

[0092] Figure 6 The structure of a substrate support assembly 200 is shown, in which a third support 210D is formed between the first support 210B and the second support 210C in the support plate 210. Figure 7 Show Figure 6 The bottom surface of the support plate. (Refer to...) Figure 6The support plate 210 also includes a third support 210D extending downward from the lower surface 210Aa of the circular plate 210A between the first support 210B and the second support 210C. (Refer to...) Figure 7 The third support 210D is formed in a circular shape in the space between the first support 210B and the second support 210C. The lower surface 210Da of the third support 210D contacts the upper surface of the base plate 220. The first fluid supply hole 226 includes an inner first fluid supply hole 226A connected to the first air layer 910 and an outer first fluid supply hole 226B connected to the second air layer 920. The second fluid supply hole 216 includes an inner second fluid supply hole 216A connected to the first air layer 910 and an outer second fluid supply hole 216B connected to the second air layer 920.

[0093] The air layer 900 is divided into an inner first air layer 910 and an outer second air layer 920 via the third support 210D. The flow rate or pressure of the heat transfer fluid flowing into the first air layer 910 and the heat transfer fluid flowing into the second air layer 920 can be adjusted. At this time, a temperature regulating fluid supply source 720, a temperature regulating fluid supply pipe 722, and a temperature regulating fluid passage 224 connected to the first air layer 910 and the second air layer 920 are respectively configured. By controlling the heat transfer fluid flowing into the first air layer 910 and the second air layer 920 respectively, the temperature of the center and edge of the substrate W can be controlled respectively.

[0094] Figure 8 The structure of a substrate support assembly 200, including an edge electrode ring 270 embedded in the edge of a support plate 210, is shown. (Refer to...) Figure 8 ,and Figure 2 Compared to the previous structure, the support plate 210 extends to contact the insulating ring 280, and the focusing ring 260 is located at the upper edge of the support plate 210. An edge electrode ring 270 is embedded inside the edge of the support plate 210.

[0095] Figure 9 This diagram illustrates the structure of a substrate support assembly 200, including an edge electrode ring 270 embedded in the edge of a support plate 210 and a third support 210D formed in the support plate 210 between a first support 210B and a second support 210C. Figure 8In contrast, the support plate 210 also includes a third support 210D extending downward from the lower surface 210Aa of the circular plate 210A between the first support 210B and the second support 210C. The third support 210D is formed in a circular shape in the space between the first support 210B and the second support 210C. The lower surface 210Aa of the third support 210D contacts the upper surface of the base plate 220. Through the third support 210D, the air layer 900 can be divided into an inner first air layer 910 and an outer second air layer 920.

[0096] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.

[0097] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. A substrate support assembly for supporting a substrate in a plasma-based substrate processing apparatus, the substrate support assembly comprising: A support plate supports the substrate from below; A bias electrode layer is embedded inside the support plate and is subjected to a pulse signal; as well as A base plate, positioned below the support plate, is subjected to an RF signal. An air layer is formed between the support plate and the base plate.

2. The substrate support assembly according to claim 1, wherein, The support plate includes: Circular plate; A first support extends downward from the center of the circular plate; and The second support extends downward from the edge of the circular plate.

3. The substrate support assembly according to claim 2, wherein, The first support is inserted into an opening formed at the center of the base plate.

4. The substrate support assembly according to claim 3, wherein, The first support is formed around a bias power cable that connects the bias electrode layer and the bias power supply.

5. The substrate support assembly according to claim 2, wherein, The second support is formed to contact the upper surface of the base plate.

6. The substrate support assembly according to claim 1, wherein, Heat transfer fluid is supplied to the air layer through a first fluid supply hole formed in the substrate.

7. The substrate support assembly according to claim 6, wherein, The substrate support assembly is configured such that the heat transfer fluid flows from the air layer to the top of the support plate through a second fluid supply hole formed in the support plate.

8. The substrate support assembly according to claim 2, wherein, The support plate also includes: A third support extends downward from below the circular plate between the first and second supports.

9. The substrate support assembly according to claim 1, wherein, An adsorption electrode layer connected to a DC power supply is formed in the support plate from above the bias electrode layer with a first gap.

10. The substrate support assembly according to claim 9, wherein, A second gap is formed from the bottom of the bias electrode layer to the bottom of the support plate.

11. A substrate processing apparatus utilizing plasma, the substrate processing apparatus comprising: The cavity forms the processing space for the substrate; A substrate support assembly is located at the lower part of the cavity; as well as The power module is electrically connected to the substrate support assembly. The substrate support assembly includes: A support plate supports the substrate from below; A bias electrode layer is embedded inside the support plate; and A base plate is disposed below the support plate. An air layer is formed between the support plate and the base plate. The power module includes: A bias power supply, electrically connected to the bias electrode layer; and An RF power supply is electrically connected to the substrate.

12. The substrate processing apparatus according to claim 11, wherein, The RF power supply outputs an RF voltage with a sinusoidal waveform.

13. The substrate processing apparatus according to claim 11, wherein, The bias power supply outputs a first bias voltage with a non-sinusoidal waveform.

14. A substrate processing apparatus utilizing plasma, the substrate processing apparatus comprising: The cavity forms the processing space for the substrate; A substrate support assembly is located at the lower part of the cavity; as well as The power module is electrically connected to the substrate support assembly. The substrate support assembly includes: A support plate supports the substrate from below; A bias electrode layer is embedded inside the support plate; A base plate, disposed below the support plate; and An edge electrode ring is disposed around the edge region of the substrate. An air layer is formed between the support plate and the base plate. The power module includes: A first bias power supply is electrically connected to the bias electrode layer; an RF power supply is electrically connected to the substrate; and The second bias power supply is electrically connected to the edge electrode ring.

15. The substrate processing apparatus according to claim 14, wherein, The support plate includes: Circular plate; A first support extends downward from the center of the circular plate; and The second support extends downward from the edge of the circular plate. The first support is inserted into an opening formed at the center of the base plate and is configured to surround a bias power cable that connects the bias electrode layer and the bias power supply. The second support is formed to contact the upper surface of the base plate.

16. The substrate processing apparatus according to claim 14, wherein, Heat transfer fluid is supplied to the air layer through a first fluid supply hole formed in the substrate. The substrate support assembly is configured such that the heat transfer fluid flows from the air layer to the top of the support plate through a second fluid supply hole formed in the support plate.

17. The substrate processing apparatus according to claim 15, wherein, The support plate also includes: A third support extends downward from below the circular plate between the first and second supports.

18. The substrate processing apparatus according to claim 14, wherein, The RF power supply outputs an RF voltage with a sinusoidal waveform. The first bias power supply outputs a first bias voltage with a non-sinusoidal waveform. The second bias power supply outputs a second bias voltage of a different magnitude that is in phase with the first bias voltage.

19. The substrate processing apparatus according to claim 14, wherein, The edge electrode ring is embedded in the edge of the support plate.

20. The substrate processing apparatus according to claim 14, wherein, The edge electrode ring is embedded inside the edge insulating ring disposed on the outside of the substrate.

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