Vapor delivery system with a filled volume container

Abstract

A vapor delivery system delivers precursor vapor to a process chamber of a substrate processing system, the system including a vapor generator that stores the precursor. A first valve includes an inlet connected to an outlet of the vapor generator. A fill volume container includes an inlet connected to an outlet of the first valve. A second valve includes an inlet connected to an outlet of the fill volume container. A bore is connected to an outlet of the second valve and the process chamber. A third valve includes an inlet connected to an outlet of the bore and an outlet connected to at least one process chamber. A controller is configured to cause the precursor vapor to accumulate in the fill volume container at a dosing pressure, the dosing pressure being equal to or greater than a process pressure, and to cause the fill volume container to deliver one or more dosing pulses.

Description

[0001] Cross-references to related applications This application claims priority to U.S. Provisional Application No. 63 / 546,585, filed October 31, 2023. The entire contents of the aforementioned application are incorporated herein by reference. Technical Field

[0002] This disclosure relates generally to substrate processing systems, and more particularly to vapor delivery systems having a filling volume container for supplying vapor precursors. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither express nor implied admissions of prior art to this disclosure.

[0004] Substrate processing systems are used to process substrates such as semiconductor wafers. Substrate processing may include deposition, etching, cleaning, and / or other processes. During the process, the substrate may be placed on a substrate support within the processing chamber of the substrate processing system. A gas delivery system is used to introduce a gas mixture into the processing chamber. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.

[0005] Some processes require vapor-based precursors produced using flow-through (FOV) vapor systems and / or bubblers. When solid or liquid precursors have low vapor pressures, vapor production may be difficult. Summary of the Invention

[0006] A vapor delivery system configured to deliver precursor vapor to a processing chamber of a substrate processing system includes a vapor generator storing the precursor, the vapor generator having an inlet and an outlet. A first valve includes an inlet and an outlet. The inlet of the first valve is in fluid communication with the outlet of the vapor generator. A filling volume container includes an inlet in fluid communication with the outlet of the first valve. A second valve includes an inlet and an outlet. The inlet of the second valve is in fluid communication with the outlet of the filling volume container. An orifice is in fluid communication with the outlet of the second valve and the processing chamber. A third valve includes an inlet and an outlet. The inlet of the third valve is in fluid communication with the outlet of the orifice, and the outlet of the third valve is in fluid communication with at least one processing chamber. The processing chamber operates at a processing pressure. A controller is configured to cause precursor vapor to accumulate in the filling volume container at a feed pressure equal to or greater than the processing pressure of the processing chamber, and the controller is also configured to cause the filling volume container to sequentially deliver precursor vapor from the filling volume container to the processing chamber via one or more feed pulses.

[0007] Among other features, a pressure sensor is configured to sense the pressure at the outlet of the orifice. The steam generator includes a flow-through type steam generator. The steam generator includes a bubbler-type steam generator. The steam generator includes a heater. Multiple gas lines are fluidly connected to a filling volumetric container, a first valve, a second valve, and an orifice.

[0008] Among other features, the heater is configured to heat multiple gas lines, a filling volumetric vessel, a first valve, a second valve, and orifices to a predetermined temperature to prevent precursor vapor from condensing therein. The feed pressure is greater than 1.5 times the processing pressure. The feed pressure is greater than or equal to 2 times the processing pressure. One or more feed pulses comprise 10 or more feed pulses, with each feed pulse lasting from 0.5 s to 5 s. The filling volumetric vessel delivers the precursor vapor to one or more additional processing chambers.

[0009] A method for delivering precursor vapor to a processing chamber of a substrate processing system includes storing a precursor in a vapor generator including an inlet and an outlet; connecting an inlet fluid of a first valve to the outlet of the vapor generator; connecting an inlet fluid of a filling volume container to the outlet of the first valve; connecting an inlet fluid of a second valve to the outlet of the filling volume container; fluidly connecting an orifice located between the outlet of the second valve and the processing chamber; operating the processing chamber at a processing pressure; accumulating precursor vapor from the vapor generator in the filling volume container at a dispensing pressure equal to or greater than the processing pressure of the processing chamber; and causing the filling volume container to sequentially deliver one or more dispensing pulses of precursor vapor to the processing chamber.

[0010] Among other features, the method includes supplying precursor vapor to the processing chamber using an orifice and a first valve; and sensing the pressure at the outlet of the orifice. The steam generator includes a flow-through type steam generator. The steam generator includes a bubbler type steam generator. The steam generator includes a heater.

[0011] Among other features, the method includes using a second valve, an orifice, and a first valve, and fluidly connecting multiple gas lines to a filling volumetric container. The method includes heating the multiple gas lines, the second valve, the orifice, and the first valve to a predetermined temperature to prevent precursor vapor from condensing therein. The feed pressure is greater than 1.5 times the processing pressure. The feed pressure is greater than or equal to 2 times the processing pressure. One or more feed pulses comprise 10 or more feed pulses, wherein the duration of each feed pulse is in the range of 0.5 s to 5 s. The method includes conveying precursor vapor from the filling volumetric container to two or more additional processing chambers.

[0012] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0013] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which: Figure 1A This is a functional block diagram of an example substrate processing system, which, according to the present disclosure, includes one or more processing chambers supplied by a vapor delivery system containing a filling volume container. Figure 1B A functional block diagram of an example filling volume container, according to the present disclosure, which is configured to accumulate and store precursor vapor for supply to multiple processing chambers (or stations) of a substrate processing system; Figure 1C A functional block diagram of an example of multiple filling volume containers, which, according to this disclosure, supply multiple processing chambers or stations of a substrate processing system; Figure 2A A functional block diagram of an example flow-through vapor (FOV) system, according to this disclosure, for supplying precursor vapor to one or more processing chambers; Figure 2B A functional block diagram of an example bubbler system, according to this disclosure, for providing precursor vapor; Figure 3 Examples of the timing of multiple feed pulses for precursor vapor supplied to one or more processing chambers in accordance with this disclosure; and Figure 4 A flowchart illustrating an example of a method for supplying precursor vapor to one or more processing chambers or stations in accordance with this disclosure.

[0014] In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical elements. Detailed Implementation

[0015] In some substrate processing systems, liquid precursors are converted into a vapor phase via a vapor generator and transported to one or more processing chambers (or stations) of the substrate processing system. Some precursors are solid at room temperature and are heated above their respective melting temperatures to form a liquid state and / or increase the vapor pressure of the precursor. Other precursors are liquid at room temperature and their vapor pressure can be increased upon heating.

[0016] Carrier gas is supplied to the inlet of the steam generator. The carrier gas carries precursor vapor. The carrier gas and precursor vapor are supplied at the outlet of the steam generator and transported as vapor phase to the processing chamber via a gas pipeline.

[0017] The generation of certain precursor vapors is limited by the vapor pressure of the heated liquid precursor. Furthermore, the delivery of precursor vapors is limited by the carrier gas saturation. Some precursors (e.g., organometallic compounds of molybdenum precursors) have low vapor pressures (e.g., 1 Torr at 90ºC). When using precursors with low vapor pressures, the vapor generator may not be able to provide a sufficient amount of precursor vapor to the processing chamber and / or station. In other words, due to the low vapor pressure of the precursor and / or the high processing pressure of the processing chamber, the flow rate of the precursor vapor may be insufficient to ensure membrane thickness uniformity.

[0018] For example, when depositing films using chemical vapor deposition (CVD), atomic layer deposition (ALD), or other deposition processes, precursor vapor can be delivered to the processing chamber using multiple short feed pulses (e.g., 10 or more pulses, each lasting from 0.5 s to 5 s (e.g., 2 s)). In some instances, the precursor vapor is delivered to the processing chamber, the substrate is exposed to the precursor vapor for a feed period, reactants are removed from the processing chamber, and the feed process is repeated a predetermined number of times. In other instances, the precursor vapor is delivered to the processing chamber, the substrate is exposed to the precursor vapor for a feed period, plasma bombardment is performed for a plasma period, reactants are removed from the processing chamber, and the feed / plasma process is repeated a predetermined number of times.

[0019] To mitigate the problem of precursors with low vapor pressure, the vapor delivery system according to this disclosure includes a filling volume container configured to store or accumulate precursor vapor. The filling volume container (and corresponding gas lines) stores the precursor vapor at a predetermined pressure equal to or higher than the processing pressure used in the processing chamber and / or station. In some instances, components of the precursor vapor delivery system (such as the filling volume container, gas lines, valves, etc.) are heated to above a predetermined temperature (e.g., 90ºC) to prevent precursor condensation.

[0020] Now refer to Figure 1A The substrate processing system 100 includes a processing chamber 102, which includes a gas distribution device 104 and a substrate support 106. In some examples, the substrate support 106 includes an electrostatic chuck (ESC). During operation, a substrate 108 is placed on the substrate support 106. If an ESC is used, the substrate support 106 includes a base plate 110. In some examples, the base plate 110 is made of a conductive material (e.g., aluminum). The base plate 110 supports a top plate 112, which may be made of ceramic or other plasma resistive materials. A bonding layer 114 bonds the top plate 112 to the base plate 110. The base plate 110 may include one or more coolant channels 116 for allowing coolant to flow through the base plate 110. In some examples, edge rings 118 are arranged around the substrate support 106 to shape the plasma (if used).

[0021] The gas delivery system 130 includes one or more gas sources 132. The gas sources 132 provide one or more process gas mixtures. For deposition processes, the process gas mixture may include carrier gas, purge gas, inert gas, deposition precursor gas, etc. The gas sources 132 are connected to the manifold 140 for mixing via flow metering devices 134 (e.g., mass flow controllers (MFCs) and / or valves). The output of the manifold 140 is fed to the gas distribution device 104.

[0022] The substrate processing system may also include a vapor delivery system 168 configured to deliver precursor vapor. The vapor delivery system 168 includes a vapor generator 170 configured to supply vapor. In some instances, the vapor generator 170 generates vapor and outputs it to a gas line 175 connected to the inlets of valves 174 and 180. The outlet of valve 174 is fluidly connected to the inlet of a filling volume container 176 via the gas line 175. In some instances, the filling volume container 176 has a sufficiently large volume to handle multiple pulses supplied to the processing chamber and / or station by the vapor delivery system 168 during operation.

[0023] The outlet of the filling volume container 176 is fluidly connected to the inlet of valve 178 via gas line 175. The outlet of valve 178 is fluidly connected to orifice 186 via gas line 175.

[0024] In some instances, one or more heaters 190 may be used to heat the filling volume container 176, gas line 175, valves 174, 178, 180, and / or orifice 186 to a predetermined temperature. For example, these components may be encased in an insulating layer 192 containing an embedded resistance heater 193. In some instances, the predetermined temperature ranges from 50ºC to 150ºC. In some instances, the predetermined temperature is 90ºC. A pressure sensor 184 monitors the pressure at the outlet of orifice 186. The outlet of orifice 186 is fluidly connected to processing chamber 102 via gas line 175 and valve 185. In some instances, the outlet of orifice 186 may optionally be fluidly connected via gas line 175 to one or more additional processing chambers (via corresponding valves 185).

[0025] In some instances, temperature controller 142 is connected to heating element 144 (e.g., thermal control element (TCE) or resistance heater) disposed in top plate 112. Temperature controller 142 can be used to power heating element 144 to control the temperature of substrate support 106 and substrate 108 during processing. Temperature controller 142 can also operate coolant assembly 146 to control the flow rate of coolant through coolant channel 116. For example, coolant assembly 146 may include a coolant pump and a coolant reservoir (not shown). Temperature controller 142 operates coolant assembly 146 to selectively allow coolant to flow through coolant channel 116 to cool substrate support 106. Similar temperature control systems (not shown) include coolant channels and / or resistance heaters, which may be disposed in nozzles or other gas distribution devices to control the temperature of nozzles or other gas distribution devices.

[0026] Valve 150 and pump 152 are connected to gas line 148 (e.g., exhaust line) and are used to control the pressure in processing chamber 102 and / or vent reactants from processing chamber 102.

[0027] If plasma is used, the plasma generator 154 includes a radio frequency (RF) source 156 for outputting RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF source 156 to the impedance of the load (including components of the processing chamber and / or plasma). A controller 160 can be used to monitor system parameters and control components of the substrate processing system 100 according to the recipe. One or more robots 161 can be used to deliver substrates to and remove substrates from the substrate support 106. In some instances, RF power is supplied to a base plate 110, and the nozzle is grounded or floating. In other instances, RF power is supplied to the nozzle, and the base plate 110 is grounded or floating.

[0028] In some instances, the gas distribution device 104 includes an inflation section 182 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 168 to a gas through-hole 187 passing through the electrode 189.

[0029] Now refer to Figure 1B and 1C ,Although Figure 1A A substrate processing system may contain a single processing chamber or station, but it can also contain more than one processing chamber or station. Figure 1BIn the simplified vapor delivery system 168', the filling volume container (CVC) 176 of the vapor delivery system 168' supplies precursor vapor to S processing chambers or stations 194-1, 194-2, ..., 194-S of the substrate processing system via S valves 185-1, 185-2, ..., 185-S, where S is an integer greater than 1. In other words, the filling volume container 176 has a one-to-many relationship with the processing chambers or stations. In some examples, not all S valves 185 are open for precursor vapor of a particular batch or batch of batches. In other words, some processing chambers can use different formulations (e.g., receiving precursor vapor with fewer batches or no batches).

[0030] exist Figure 1C In the simplified vapor delivery system 168'', the vapor delivery system 168'' supplies precursor vapor to V filling volume containers 176-1, 176-2, ..., 176-V via S valves 185-1, 185-2, ..., 185-S. The V filling volume containers 176-1, ..., 176-V supply precursor vapor to S processing chambers or stations 194-1, 194-2, ..., 194-S of the substrate processing system, where V is an integer greater than 1. In other words, the filling volume container 176 has a many-to-many or one-to-one relationship with the processing chambers or stations. In some examples, V = S. In other examples, V > S or V < S. In some examples, a single vapor generator supplies the V filling volume containers 176-1, 176-2, ..., 176-V. In other examples, one or more steam generators supply V filling volume containers 176-1, ... and 176-V.

[0031] Now for reference Figure 2A and 2B It shows examples of different types of steam generators. Figure 2A In this device, the vapor generator 170' includes an ampoule 210 (e.g., a sealed chamber) containing an inlet 212 and an outlet 214. In some instances, the ampoule has a cylindrical or prismatic shape, but other shapes may also be used. The ampoule 210 stores a solid or liquid precursor 220. A heater 224 heats the ampoule 210 to a predetermined temperature (e.g., above the melting temperature of the solid precursor if one is used).

[0032] Gas source 218 supplies carrier gas to inlet 212 of ampoule 210. In some instances, the carrier gas is supplied at a pressure P2 that is higher than or equal to the operating pressure P1 of the processing chamber. The carrier gas flows through the inlet and over the liquid precursor in ampoule 210, thereby entraining vapor generated by the liquid precursor 220. Vapor generator 170 outputs the carrier gas and the entrained precursor vapor via an outlet.

[0033] exist Figure 2B In this embodiment, the vapor generator 170'' includes an ampoule 210 having an inlet and an outlet. The ampoule 210 stores a liquid precursor 220 (or a solid precursor melted into a liquid state). A heater 224 heats the ampoule 210 to a predetermined temperature above the precursor's melting temperature. A carrier gas from a gas source 218 is supplied to the liquid precursor to generate bubbles 228 that increase vapor production. The carrier gas flows through the liquid precursor, entraining precursor vapor. The vapor generator 170 outputs the carrier gas and entrained vapor via the outlet. In some embodiments, the vapor generator 170'' includes a gas distribution device 230, which includes an inflation section 232 and a gas through-hole 234 to distribute the bubbles 228 within the liquid precursor.

[0034] In some examples, the operating pressure P2 of the steam generator 170 and the filling volume container is greater than or equal to the pressure P1 of the processing chamber 102 that receives the steam. In some examples, P2 > 1.5 * P1. In some examples, P2 ≥ 2 * P1. In some examples, P2 ≥ 3 * P1.

[0035] In some examples, the filling volume container 176 supplies a substrate processing system comprising four (4) processing chambers or stations. In some examples, the volume of the filling volume container 176 is large enough to handle the number of pulses supplied to the processing chambers and / or stations by the vapor supply system 168 during operation. In some examples, the volume of the filling volume container is between 1.0 L and 3.5 L (e.g., 2.0 L), while the gas line stores additional vapor (e.g., an additional volume between 0.3 L and 1.2 L (e.g., 0.7 L)), though larger or smaller volumes may be used for specific applications. In some examples, the opening of the orifice 186 is between 0.07 and 0.25 inches (e.g., 0.110 inches), but other sizes may be used. The orifice size will vary due to variations in chamber and filling volume container pressure, feed level, precursor type, number of stations, feed time, and / or other parameters. In some examples, for processes operating at 45 to 55 Torr pressures, the filling volumetric container is filled at a pressure of 140 to 160 Torr, but other pressures can be used.

[0036] refer to Figure 3 The substrate processing system can be used to perform pulsed deposition such as pulsed CVD or ALD (with or without plasma). Deposition can begin after precursor vapor has accumulated in the filling volume container to a sufficient pressure. When the substrate is ready for film deposition, valve 178 opens for a predetermined time and then closes to supply precursor feed to the processing chamber. In some examples, valve 178 opens and closes a predetermined number of times to deliver feed pulses of precursor vapor to the processing chamber. In some examples, the processing chamber is purged after each feed period. In other examples, the processing chamber is stimulated with plasma after each feed period and then purged.

[0037] refer to Figure 4 The image shows a method 400 for generating precursor vapor according to the present disclosure. At 408, a solid or liquid precursor is arranged in an ampoule. At 410, the ampoule is heated to a first predetermined temperature (above its melting point if a solid precursor is used). The filling volume container, gas line, valve, and / or orifice are heated to a second predetermined temperature. The first and second predetermined temperatures may be the same or different.

[0038] At 414, a carrier gas is supplied to the vapor generator (in an FOV or bubbling configuration). The carrier gas entrains precursor vapor. At 418, the vapor and carrier gas accumulate in the filling volume container at a predetermined pressure P2. At 422, the method determines whether the substrate is ready to deliver precursor vapor. If the answer to 422 is yes, then at 426, the precursor vapor is supplied to the processing chamber (operating at pressure P1). If the answer to 422 is no, the method returns to 410.

[0039] At 428, this method determines whether the feeding period has ended. If the answer to 428 is yes, this method may optionally purge the processing chamber. Alternatively, this method may excite the plasma for a predetermined plasma period, extinguish the plasma, and then purge the processing chamber at 430. At 432, this method determines whether additional precursor vapor needs to be fed. If the answer to 432 is no, this method ends. If the answer to 432 is yes, this method will determine at 434 whether it is time to additionally feed precursor vapor. If the answer to 434 is yes, this method returns to 428.

[0040] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0041] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second elements is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate element exists between the first and second elements, but it can also be an indirect relationship, where one or more intermediate elements exist between the first and second elements (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0042] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any process disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer tools and other transfer tools, and / or loading locks that are connected to or docked with a specific system.

[0043] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0044] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0045] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0046] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. A vapor delivery system configured to deliver precursor vapor to a processing chamber of a substrate processing system, comprising: A steam generator that stores precursors and includes an inlet and an outlet; A first valve includes an inlet and an outlet, wherein the inlet of the first valve is in fluid communication with the outlet of the steam generator; A filling volumetric container having an inlet in fluid communication with the outlet of the first valve; A second valve includes an inlet and an outlet, wherein the inlet of the second valve is in fluid communication with the outlet of the filling volume container; The orifice is in fluid communication with the outlet of the second valve and the processing chamber; A third valve includes an inlet and an outlet, wherein the inlet of the third valve is in fluid communication with the outlet of the orifice, and the outlet of the third valve is in fluid communication with the processing chamber. The processing chamber operates at a processing pressure; and The controller is configured to: The precursor vapor is allowed to accumulate in the filling volume container at a feed pressure equal to or greater than the processing pressure of the processing chamber; and The filling volume container sequentially delivers the precursor vapor of one or more batching pulses from the filling volume container to the processing chamber.

2. The steam delivery system of claim 1, further comprising a pressure sensor configured to sense the pressure at the outlet of the orifice.

3. The steam delivery system according to claim 1, wherein the steam generator comprises a flow-through steam type steam generator.

4. The steam delivery system according to claim 1, wherein the steam generator comprises a bubbler-type steam generator.

5. The steam delivery system of claim 1, wherein the steam generator comprises a heater.

6. The steam delivery system according to claim 1, further comprising: a plurality of gas pipelines fluidly connected to the filling volume container, the first valve, the second valve, and the orifice.

7. The vapor delivery system of claim 6, further comprising a heater configured to heat the plurality of gas lines, the filling volume container, the first valve, the second valve, and the orifice to a predetermined temperature to prevent the precursor vapor from condensing therein.

8. The steam conveying system according to claim 1, wherein the dispensing pressure is greater than 1.5 times the processing pressure.

9. The steam conveying system according to claim 1, wherein the dispensing pressure is greater than or equal to twice the processing pressure.

10. The steam delivery system of claim 1, wherein the one or more dispensing pulses comprise 10 or more dispensing pulses and wherein the duration of each dispensing pulse is in the range of 0.5 s to 5 s.

11. The steam conveying system according to claim 1, wherein: The processing chamber is the first processing chamber; and The filling volume container delivers the precursor vapor to one or more second processing chambers.

12. A method for delivering precursor vapor to a processing chamber of a substrate processing system, comprising: Connect the inlet fluid of the first valve to the outlet of the vapor generator that stores the precursor; Connect the inlet fluid of the filling volume container to the outlet of the first valve; Connect the inlet fluid of the second valve to the outlet of the filling volume container; The fluid connection is located at the orifice between the outlet of the second valve and the processing chamber; The processing chamber is operated under processing pressure; The precursor vapor from the steam generator is accumulated in the filling volume container at a dispensing pressure equal to or greater than the processing pressure of the processing chamber. as well as The filling volume container sequentially delivers the precursor vapor of one or more batching pulses to the processing chamber.

13. The method of claim 12, further comprising: The precursor vapor is supplied to the processing chamber using the orifice and the first valve; and The pressure at the outlet of the orifice is sensed.

14. The method of claim 12, wherein the steam generator comprises a flow-through steam type steam generator.

15. The method of claim 12, wherein the steam generator comprises a bubbler-type steam generator.

16. The method of claim 12, wherein the steam generator comprises a heater.

17. The method of claim 12, further comprising using the second valve, the orifice, and the first valve, and fluidly connecting the filling volume container via a plurality of gas lines.

18. The method of claim 17, further comprising heating the plurality of gas lines, the second valve, the orifice, and the first valve to a predetermined temperature to prevent the precursor vapor from condensing therein.

19. The method of claim 11, wherein the batching pressure is greater than 1.5 times the processing pressure.

20. The method of claim 11, wherein the batching pressure is greater than or equal to twice the processing pressure.

21. The method of claim 11, wherein the one or more dispensing pulses comprise 10 or more dispensing pulses and wherein the duration of each dispensing pulse is in the range of 0.5 s to 5 s.

22. The method according to claim 11, wherein: The processing chamber is the first processing chamber; and The method further includes conveying the precursor vapor from the filling volume container to one or more second processing chambers.

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