Tunnel junction cascade type led with different pump wavelengths

By cascading and depositing pn junctions with different emission wavelengths on LED chips and combining them with phosphor materials, the problems of color fidelity and emission non-uniformity of existing phosphor-converted LEDs at high power have been solved, achieving efficient and uniform spectral conversion effect.

CN122123147APending Publication Date: 2026-05-29LUMILEDS LLC

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
LUMILEDS LLC
Filing Date
2024-10-25
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing phosphor-converted LED devices struggle to achieve high color fidelity and continuous or enhanced emission within the blue-cyan range when operating at high power. Furthermore, existing solutions such as violet-pumped and dual-pumped LEDs suffer from low efficiency or poor color uniformity.

Method used

A cascaded LED structure is adopted, in which first and second pn junctions, separated by a tunnel junction, are sequentially deposited on the same wafer, each having a different emission wavelength in the range of 400-500nm, and a wavelength conversion layer is formed thereon, combined with phosphor material to achieve spectral conversion.

Benefits of technology

It achieves a spectrum with high color fidelity and high black pixel content, meeting the application requirements of high-power LEDs in compact single-die packages, and improving spectral efficiency and color uniformity.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122123147A_ABST
    Figure CN122123147A_ABST
Patent Text Reader

Abstract

A phosphor-converted LED is provided that includes a first p-n junction and a second p-n junction sequentially deposited on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n and p layers of the first junction, and another multiple quantum well is embedded between the n and p layers of the second junction. The peak emission wavelength of both junctions is between 400 nm and 500 nm and separated by at least 5 nm.
Need to check novelty before this filing date? Find Prior Art