Substrate processing method, bonding system, and semiconductor device

Abstract

A substrate processing method includes sequentially stacking a first die and a second die on a target substrate. The target substrate has an insulating film and a plurality of electrodes on a facing surface thereof facing the first die. The first die has an insulating film and one or more electrodes on a facing surface thereof facing the target substrate, and has an insulating film and one or more electrodes on a facing surface thereof facing the second die. The second die has an insulating film and one or more electrodes on a facing surface thereof facing the first die. The substrate processing method includes joining the target substrate and the insulating film of the first die to each other, joining the target substrate and the electrodes of the first die to each other, joining the first die and the insulating film of the second die to each other, and joining the first die and the electrodes of the second die to each other.

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