A thin film lithium niobate silicon optical integrated chip and a manufacturing method thereof

By first bonding a thin-film lithium niobate layer onto a silicon photonics base chip and then using a double-layer metal system for electrical interconnection, the bonding quality and microwave loss problems between the silicon photonics chip and the thin-film lithium niobate modulator are solved, realizing a high-efficiency, low-loss electro-optic modulator suitable for optical communication and optical interconnection fields.

CN122131518APending Publication Date: 2026-06-02XIFENG OPTOELECTRONICS TECH (NANJING) CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIFENG OPTOELECTRONICS TECH (NANJING) CO LTD
Filing Date
2026-04-01
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In existing technologies, heterogeneous integration of silicon photonic chips and thin-film lithium niobate modulators suffers from poor bonding quality, poor electrode performance, and high microwave loss, making it difficult to achieve high-performance optical communication and optical interconnection.

Method used

A silicon photonics base chip without a metal layer is first bonded to a thin-film lithium niobate layer, and then electrically interconnected through a dual-layer metal system, including a first metal layer for driving electrodes and a second metal layer as traveling wave electrodes. Functional separation is achieved by using metal vias, which optimizes modulation efficiency and reduces microwave loss.

Benefits of technology

It improves bonding quality and yield, optimizes modulation efficiency and high-frequency performance, realizes a low-loss, high-bandwidth electro-optic modulator, resolves the contradictions in the existing technology, and is suitable for large-scale high-performance integrated chip manufacturing.

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Abstract

This invention discloses a thin-film lithium niobate silicon optical integrated chip and its fabrication method. The thin-film lithium niobate silicon optical integrated chip sequentially comprises a metal-free silicon photonic base chip, a thin-film lithium niobate waveguide layer bonded thereon, a silicon dioxide cladding covering the chip, and at least two functionally separated metal layers located above the cladding. The first metal layer serves as an electrical contact and modulation electrode, and the second metal layer is interconnected with the first layer via a visor and serves as a traveling wave electrode. The fabrication method is used to fabricate the thin-film lithium niobate silicon optical integrated chip. Advantages: In this invention, the silicon photonic base chip does not contain any metallization layer (except for metal silicides) before bonding to the thin-film lithium niobate layer, thus ensuring the flatness of the bonding interface and bonding quality, and reducing interlayer coupling loss.
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