Cutting system and cutting method

Abstract

This invention discloses a cutting system and method, comprising: grooving equipment, grinding equipment, hidden dicing equipment, wafer casting equipment, and slitting equipment; the hidden dicing equipment includes a laser device for wafer dicing, the laser device comprising a laser, a tunable filter, a spatial light modulator, and a focusing structure arranged sequentially along the external optical path of the laser, the tunable filter being suitable for bandpass filtering of the laser beam, the spatial light modulator being suitable for shaping the laser beam, and the laser beam emitted from the self-focusing structure being suitable for generating multiple focal points distributed along the laser beam propagation direction. In this invention, the laser beam can be phase-modulated by the spatial light modulator to generate multiple focal points distributed along the laser beam propagation direction, improving processing efficiency; the tunable filter suppresses non-target wavelengths, providing a high-quality laser beam for the spatial light modulator, achieving laser beam shaping, and improving processing quality.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a cutting system and cutting method. Background Technology

[0002] Lasers possess advantages such as high consistency and concentrated energy, and offer significant cost advantages in mass production. Therefore, laser micromachining is widely used in critical processes such as wafer dicing and ingot stripping. However, current laser micromachining methods mostly employ single-focusing, requiring repeated scanning and limiting processing speed. Simply increasing pulse energy density to shorten processing time can lead to problems such as increased heat-affected zones. Furthermore, in reality, monochromatic light sources often have a certain spectral width, which can easily affect processing quality.

[0003] Therefore, it is necessary to improve the existing technology to overcome the aforementioned defects. Summary of the Invention

[0004] The purpose of this invention is to provide a cutting system and cutting method to improve the efficiency and quality of wafer dicing.

[0005] The objective of this invention is achieved through the following technical solution: A cutting system, comprising: Grooving equipment, suitable for ablation of the front side of wafers; Grinding equipment suitable for thinning wafers from the back side; Hidden cutting equipment is suitable for modifying the interior of wafers; The wafer casting equipment is suitable for adding a second protective film to the front side of the wafer after ablation and removing the first protective film on the back side of the wafer, or adding a third protective film to the back side of the wafer after modification and removing the second protective film on the front side of the wafer. A dicing device suitable for applying external force to a wafer with an added third protective film to dic the wafer; The hidden dicing device includes a laser device for wafer dicing; the laser device includes a laser, a tunable filter, a spatial light modulator, and a focusing structure arranged sequentially along the external optical path of the laser; the tunable filter is adapted to bandpass filter the laser beam, the spatial light modulator is adapted to shape the laser beam, and the laser beam emitted from the focusing structure is adapted to generate multiple focal points distributed along the laser beam transmission direction.

[0006] Furthermore, the laser device includes: An optical shutter is located at the output end of the laser; A beam expander is disposed at the output end of the optical shutter; An attenuation module is disposed between the output end of the beam expander and the input end of the tunable filter to reduce the laser beam power.

[0007] Furthermore, the laser device includes: A first reflector is disposed between the tunable filter and the spatial light modulator, so that the laser beam emitted from the tunable filter can be deflected by the first reflector to enter the spatial light modulator. A second reflector is disposed between the spatial light modulator and the focusing structure, so that the laser beam emitted from the spatial light modulator can be deflected by the second reflector and incident on the focusing structure. A second half-wave plate is provided between the tunable filter and the first reflector.

[0008] Furthermore, there is an angle α between the incident laser beam of the first reflector and the emitted laser beam of the second reflector, wherein the angle α = 90°; there is an angle β between the incident laser beam of the spatial light modulator and the emitted laser beam of the spatial light modulator, wherein the angle β ranges from 0 to 10°; and there is an angle γ between the emitted laser beam of the spatial light modulator and the emitted laser beam of the second reflector, wherein the angle γ ranges from 45 to 50°.

[0009] Furthermore, the focusing structure includes a beam shrinking mirror and an objective lens arranged sequentially along the laser beam transmission direction. The laser beam emitted from the second reflecting mirror is incident on the beam shrinking mirror, and the laser beam emitted from the beam shrinking mirror is incident on the objective lens.

[0010] Furthermore, the laser device includes: Sensors are used to measure the distance between themselves and the wafer end face in real time; The motion module is connected to the sensor signal; The focusing structure is disposed on the motion module, and the motion module moves the focusing structure closer to or away from the wafer in response to the measurement data of the sensor.

[0011] Furthermore, the laser is a laser with an adjustable frequency of 50~100kHz and an adjustable average power of 0~10W.

[0012] Furthermore, the laser is an infrared nanosecond laser with a frequency of 50~100kHz; when the laser frequency is 100kHz, its power is greater than 4W and its pulse width is 30~150ns.

[0013] Furthermore, the laser is an infrared laser with a wavelength of 1342nm, 1099nm, or 1064nm; or, the laser is a near-infrared laser with a wavelength of 1064nm or 1030nm.

[0014] In addition, the present invention also provides a cutting method, comprising the following steps: S1. Place the wafer in the grooving equipment and ablate the front side of the wafer to form a cut (groove). S2. Place the wafer in the wafer casting equipment, add a second protective film to the front side of the wafer after ablation, and peel off the first protective film on the back side of the wafer.

[0015] S3. Place the wafer in the grinding equipment and thin the wafer from the back side. S4. The wafer is placed in the cleaving device, and the laser beam emitted from the laser device enters from the back of the wafer to modify the interior of the wafer. S5. Place the wafer in the wafer casting equipment, add a third protective film to the back of the wafer after modification, and peel off the second protective film on the front of the wafer. S6. Place the wafer in the dicing device, apply external force to the wafer with the added third protective film, and dic the wafer.

[0016] Compared with the prior art, the present invention has the following beneficial effects: First, this invention applies multi-focus technology based on spatial light modulator to wafer dicing. The laser beam can be phase-modulated by the spatial light modulator and focused by the focusing structure to generate multiple focal points distributed along the laser beam transmission direction, eliminating the need for repeated scanning and improving processing efficiency. Secondly, the spatial light modulator can load a phase map, and by adjusting the phase map, the number of focal points, the energy ratio of a single focal point, and the spacing between adjacent focal points can be changed without replacing the hardware, making it highly versatile and easy to operate. Furthermore, the laser beam emitted from the laser has sideband spectral lines. Therefore, a tunable filter is set at the input of the spatial light modulator. By adjusting the transmittance of a specific wavelength, non-target wavelengths are suppressed, thereby providing a high-quality laser beam for the spatial light modulator, realizing laser beam shaping, and improving processing quality. Attached Figure Description

[0017] Figure 1 This is a block diagram of the cutting system of the present invention.

[0018] Figure 2 This is a block diagram of the laser device in this invention.

[0019] Figure 3 This is a schematic diagram of the optical path between the first reflector, the second reflector, and the spatial light modulator of the present invention.

[0020] Figure 4 This is a flowchart of the cutting process of the cutting system of the present invention.

[0021] Explanation of reference numerals in the attached figures: 100. Grooving equipment; 200. Grinding equipment; 300. Hidden cutting equipment; 400. Molding equipment; 500. Segmentation equipment; 600. Laser device; 610. Laser; 620. Tunable filter; 630. Spatial light modulator; 640. Focusing structure; 641. Beam shrinking lens; 642. Objective lens; 650. Optical shutter; 660. Beam expander; 670. Attenuation module; 671. First half-wave plate; 672. Second half-wave plate; 681. First reflecting mirror; 682. Second reflecting mirror; 690. Second half-wave plate; 700. Wafer; 710. Substrate; 720. Dielectric layer. Detailed Implementation

[0022] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, it should be noted that, for ease of description, only the parts relevant to this application are shown in the accompanying drawings, not the entire structure. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0023] The terms “comprising” and “having”, and any variations thereof, used in this application are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.

[0024] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0025] It should be noted that during the preparatory stage of the dicing process, a first protective film is added to the back side of wafer 700. Please refer to [link / reference]. Figures 1 to 4As shown, a cutting system corresponding to a preferred embodiment of the present invention includes: a grooving device 100, adapted to ablate the front side of a wafer 700; a grinding device 200, adapted to thin the wafer 700 from the back side; a hidden cutting device 300, adapted to modify the interior of the wafer 700; a casting device 400, adapted to add a second protective film to the front side of the wafer 700 after ablation and peel off the first protective film on the back side of the wafer 700, or to add a third protective film to the back side of the wafer 700 after modification and peel off the second protective film on the front side of the wafer 700; and a dicing device 500, adapted to... An external force is applied to the wafer 700 with the added third protective film to cleave the wafer 700; wherein, the cleaving device 300 includes a laser device 600 for wafer cleaving; the laser device 600 includes a laser 610, a tunable filter 620, a spatial light modulator 630, and a focusing structure 640 arranged sequentially along the external optical path of the laser 610, the tunable filter 620 is adapted to bandpass filter the laser beam, the spatial light modulator 630 is adapted to shape the laser beam, and the laser beam emitted from the self-focusing structure 640 is adapted to generate multiple focal points distributed along the laser beam transmission direction.

[0026] First, this invention applies multi-focus technology based on spatial light modulator 630 to wafer dicing. The laser beam can be phase-modulated by spatial light modulator 630 and focused by focusing structure 640 to generate multiple focal points distributed along the laser beam transmission direction, eliminating the need for repeated scanning and improving processing efficiency.

[0027] Secondly, the spatial light modulator 630 can load a phase map, and by adjusting the phase map, the number of focal points, the energy ratio of a single focal point, and the spacing between adjacent focal points can be changed without replacing the hardware, making it highly versatile and easy to operate.

[0028] Furthermore, since the laser beam emitted from the laser 610 has both a main wavelength and a secondary wavelength, a tunable filter 620 is set at the input end of the spatial light modulator 630. By adjusting the transmittance of a specific wavelength, non-target wavelengths are suppressed, thereby providing a high-quality beam for the spatial light modulator 630, realizing beam shaping, and improving processing quality.

[0029] Furthermore, the laser device 600 includes an optical shutter 650, a beam expander 660, and an attenuation module 670. The optical shutter 650 is located at the output end of the laser 610 and is used to cut off or allow the laser beam emitted from the laser 610. The beam expander 660 is located at the output end of the optical shutter 650. The laser beam allowed by the optical shutter 650 is incident on the beam expander 660 to amplify the beam waist diameter and compress the divergence angle, thereby ensuring that the laser beam emitted from the attenuation module 670 fills as much of the target surface of the spatial light modulator 630 as possible. Preferably, in one embodiment, the beam expander 600 is a 1~10X adjustable zoom beam expander. The attenuation module 670 is located between the output end of the beam expander 660 and the input end of the tunable filter 620, and is used to reduce the laser beam power, so that the energy density of the laser beam emitted from the attenuation module 670 does not exceed the threshold of the spatial light modulator 630, preventing damage to the spatial light modulator 630. Preferably, the attenuation module 670 includes a first half-wave plate 671 and a polarizing beam splitter 672. The laser beam emitted from the beam expander 660 is incident on the first half-wave plate 671 to adjust its polarization direction; the laser beam emitted from the first half-wave plate 671 is incident on the polarizing beam splitter 672 to separate the laser beam and allow a portion of it to pass through; thus, the power of the laser beam emitted from the attenuation module 670 can be precisely and steplessly controlled by rotating the first half-wave plate 671.

[0030] Furthermore, the laser device 600 includes a first reflector 681 and a second reflector 682. The first reflector 681 is disposed between the tunable filter 620 and the spatial light modulator 630, allowing the laser beam emitted from the tunable filter 620 to be deflected by the first reflector 681 and incident on the spatial light modulator 630. The second reflector 682 is disposed between the spatial light modulator 630 and the focusing structure 640, allowing the laser beam emitted from the spatial light modulator 630 to be deflected by the second reflector 682 and incident on the focusing structure 640.

[0031] Preferably, the incident laser beam of the first reflector 681 and the emitted laser beam of the second reflector 682 are at an angle α, where α = 90°. The incident laser beam of the first reflector 681 is parallel to the horizontal direction, and the emitted laser beam of the second reflector 682 is parallel to the vertical direction. The incident laser beam of the spatial light modulator 630 and the emitted laser beam of the spatial light modulator 630 are at an angle β, where β ranges from 0 to 10°, preferably 8°. The emitted laser beam of the spatial light modulator 630 and the emitted laser beam of the second reflector 682 are at an angle γ, where γ ranges from 45 to 50°, preferably 49°. The above-described parameter limitations of the laser device 600 ensure that the spatial light modulator 630 maintains its design specifications, thereby improving the reliability of the laser device 600.

[0032] Furthermore, the laser device 600 includes a second half-wave plate 690. The second half-wave plate 690 is disposed between the tunable filter 620 and the first reflector 681. The laser beam emitted from the tunable filter 620 passes through the second half-wave plate 690 and the first reflector 681 before entering the spatial light modulator 630. Specifically, the laser beam emitted from the tunable filter 620 enters the second half-wave plate 690 to adjust the polarization direction of the laser beam, thereby ensuring that the incident laser beam at the first reflector 681 meets the aforementioned requirements of the laser device 600.

[0033] Furthermore, the focusing structure 640 includes a beam shrinking mirror 641 and an objective lens 642 arranged sequentially along the laser beam propagation direction. The laser beam emitted from the second reflecting mirror 682 is incident on the beam shrinking mirror 641 to compress the beam waist diameter and amplify the divergence angle, so that the laser beam emitted from the beam shrinking mirror 641 is incident on the objective lens 642 and completely received by the entrance pupil of the objective lens 642. The laser beam emitted from the objective lens 642 generates multiple focal points along the laser beam propagation direction for wafer dicing, improving processing efficiency.

[0034] Furthermore, in one embodiment, the laser 610 is a laser with an adjustable frequency of 50~100kHz and an adjustable average power of 0~10W.

[0035] In another embodiment, laser 610 is an infrared nanosecond laser with a frequency of 50~100kHz. When the laser 610 has a frequency of 100kHz, its power is greater than 4W and its pulse width is 30~150ns.

[0036] In another embodiment, the laser 610 is an infrared laser with a wavelength of 1342nm, 1099nm, or 1064nm; or, the laser 610 is a near-infrared laser with a wavelength of 1064nm or 1030nm.

[0037] Furthermore, the spatial light modulator 630 has a wavelength of 400~2000nm, a pixel size of ≥1.3MP, and a threshold of 15.7~29.9w / cm². 2 Liquid crystal spatial light modulator.

[0038] Furthermore, objective lens 642 employs a large numerical aperture (NA) focusing lens, thereby generating a small focal point with high lateral resolution and short Rayleigh length from the laser beam emitted from objective lens 642, in order to improve wafer dicing efficiency and processing quality.

[0039] Preferably, in one embodiment, the NA of the objective lens 642 is 0.5 to 0.8.

[0040] Furthermore, in one embodiment, using the phase difference corresponding to different adjacent focal distances as variables, the original phase function that meets the wafer dicing requirements is obtained by solving the Fourier series expansion coefficients. The original phase function is iterated, and the phase map loaded onto the spatial light modulator 630 is obtained through point-to-point nonlinear mapping. Thus, the number of focal points generated by the laser beam, the energy ratio of a single focal point, and the spacing between adjacent focal points are changed by adjusting the Fourier series expansion coefficients.

[0041] Specifically, assuming the energy of the laser beam incident on the spatial light modulator 630 is normalized to 1, the energy percentage of a single focal point generated by the laser beam emitted from the objective lens 642 is... The distance between adjacent focal points is of Each focal point, and the phase function of its light field. satisfy: Understandable, This can be considered as the equivalent phase of a large numerical aperture objective lens 642; the distance between adjacent focal points Once confirmed, It can be considered a constant; therefore, by solving the function Obtain the original phase function such that it satisfies: Its corresponding Fourier series expansion coefficients for: Energy conservation is satisfied: Then, the original phase function that meets the wafer dicing requirements is iterated, and the phase map loaded on the spatial light modulator 630 is obtained through point-to-point nonlinear mapping.

[0042] Assuming the energy percentage of a single focal point meets the wafer dicing requirements is Original phase function The phase function obtained after k-1 iterations is: It is understandable that k≥1.

[0043] Will Substitute into the aforementioned formula to solve for the coefficients of the Fourier series expansion. Modulus, assuming Modulus and The level with the largest difference is the first. Level, compensation coefficient is By correcting the first First harmonic components, The phase function is obtained through iteration. : For the phase function obtained through iteration, the phase map loaded on the spatial light modulator 630 is obtained through point-to-point nonlinear mapping in the two-dimensional coordinate plane.

[0044] In another embodiment, a side-by-side focal phase map is first obtained based on the GSW (Gas-Switch) phase map. Then, by superimposing a Fresnel lens factor onto the side-by-side focal phase map, a phase map loaded onto the spatial light modulator 630 is obtained. This generates a three-dimensional multifocal array from the laser beam emitted from the objective lens 642, which is used for wafer dicing to improve processing efficiency. It is understood that the three-dimensional multifocal array includes multiple focal points distributed along the laser beam propagation direction.

[0045] Furthermore, due to warping of the wafer 700 or surface topography errors on the wafer 700 end face, the multiple focal points generated by the laser beam emitted from the self-focusing structure 640 cannot be precisely distributed along the laser beam transmission direction, affecting the processing effect. Preferably, in one embodiment, the laser device 600 includes a sensor (not shown) and a motion module (not shown) connected to the sensor signal, with the focusing structure 640 disposed on the motion module. The sensor is used to measure the distance between itself and the wafer 700 end face in real time, and the motion module responds to the sensor measurement data by moving the focusing structure 640 closer to or further away from the wafer 700 to dynamically compensate for the focal point distribution deviation.

[0046] Indeed, the laser device 600, with its adaptive configuration, can be used for ingot stripping.

[0047] Furthermore, the present invention also provides a cutting method, comprising the following steps: S1. Place wafer 700 in the grooving equipment 100 and ablate the front side of wafer 700 to form a cut (groove).

[0048] It should be noted that the wafer 700 in this invention includes a substrate 710 or includes a substrate 710 and a dielectric layer 720. For the sake of explaining the dicing method, the wafer 700 including a substrate 710 and a dielectric layer 720 will be used as an example below.

[0049] The front side of wafer 700 is the end face of substrate 710 used for manufacturing integrated circuits (ICs), and the back side of wafer 700 is the other end face of substrate 710. Dielectric layer 720 covers the front side of wafer 700.

[0050] In step S1, a groove (groove) with a depth greater than the thickness of the dielectric layer 720 is formed on the front side of the wafer 700.

[0051] S2. Place wafer 700 in the casting equipment 400. After ablation, add a second protective film to the front side of wafer 700 and peel off the first protective film on the back side of wafer 700.

[0052] S3. Place wafer 700 in grinding equipment 200 and thin wafer 700 from the back side.

[0053] S4. Place the wafer 700 in the hidden cutting device 300, and the laser beam emitted from the laser device 600 enters the substrate 710 from the back of the wafer 700 to modify the interior of the wafer 710.

[0054] In step S4, the Ra of the back side of wafer 700 is reduced after the processing in step S3, thus reducing the scattering of the laser beam emitted from laser device 600 when it enters the substrate 710. Furthermore, the multiple focal points generated by the laser beam emitted from laser device 600 can simultaneously form micro-burst points, inducing the directional propagation of cracks inside substrate 710 and preventing wafer 700 from chipping or fragmenting.

[0055] S5. Place wafer 700 in the casting equipment 400, add a third protective film to the back of wafer 700 after modification, and peel off the second protective film on the front of wafer 700.

[0056] S6. Place the wafer 700 in the dicing equipment 500, apply external force to the wafer 700 with the added third protective film, and dic the wafer 700.

[0057] In step S6, the third protective film is deformed by rolling in the dicing device 500, thereby applying tensile force along the radial direction of the wafer 700 and dicing the wafer 700 into several grains. Preferably, in one embodiment, the third protective film has a die-binding layer, and step S6 is performed in a low-temperature environment. The die-binding layer is brittle at low temperatures, and the tensile force is released in a concentrated manner, promoting the dicing of the wafer 700.

[0058] It is understandable that in step S4, the laser device 600 is adaptively configured according to the wafer dicing requirements, including: obtaining a phase map loaded on the spatial light modulator 630.

[0059] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A cutting system, characterized in that, include: Grooving equipment (100) is suitable for ablation of the front side of a wafer (700); Grinding equipment (200) is suitable for thinning wafer (700) from the back side of wafer (700); Hidden cutting equipment (300) is suitable for modifying the interior of a wafer (700); The film casting equipment (400) is suitable for adding a second protective film to the front side of the wafer (700) after ablation and removing the first protective film on the back side of the wafer, or adding a third protective film to the back side of the wafer and removing the second protective film on the front side of the wafer after modification. A dicing device (500) is adapted to apply external force to a wafer (700) with an added third protective film to dic the wafer (700); The hidden dicing device (300) includes a laser device (600) for dicing a wafer (700); the laser device (600) includes a laser (610), a tunable filter (620), a spatial light modulator (630), and a focusing structure (640) arranged sequentially along the external optical path of the laser (610). The tunable filter (620) is adapted to bandpass filter the laser beam, the spatial light modulator (630) is adapted to shape the laser beam, and the laser beam emitted from the focusing structure (640) is adapted to generate multiple focal points distributed along the laser beam transmission direction.

2. The cutting system as described in claim 1, characterized in that, The laser device (600) includes: A shutter (650) is disposed at the output end of the laser (610); A beam expander (660) is disposed at the output end of the shutter (650); An attenuation module (670) is disposed between the output end of the beam expander (660) and the input end of the tunable filter (620) to reduce the laser beam power.

3. The cutting system as described in claim 1, characterized in that, The laser device (600) includes: A first reflector (681) is disposed between the tunable filter (620) and the spatial light modulator (630). The laser beam emitted from the tunable filter (620) can be deflected by the first reflector (681) and incident on the spatial light modulator (630). The second reflector (682) is disposed between the spatial light modulator (630) and the focusing structure (640). The laser beam emitted from the spatial light modulator (630) can be deflected by the second reflector (682) and incident on the focusing structure (640). A second half-wave plate (690) is provided between the tunable filter (620) and the first reflector (681).

4. The cutting system as described in claim 3, characterized in that, The incident laser beam of the first reflector (681) and the emitted laser beam of the second reflector (682) have an angle α, the angle α = 90°. The incident laser beam of the spatial light modulator (630) and the emitted laser beam of the spatial light modulator (630) have an angle β, the angle β ranges from 0 to 10°. The emitted laser beam of the spatial light modulator (630) and the emitted laser beam of the second reflector (682) have an angle γ, the angle γ ranges from 45 to 50°.

5. The cutting system as described in claim 3, characterized in that, The focusing structure (640) includes a beam shrinking mirror (641) and an objective lens (642) arranged sequentially along the laser beam transmission direction. The laser beam emitted from the second reflector (682) is incident on the beam shrinking mirror (641), and the laser beam emitted from the beam shrinking mirror (641) is incident on the objective lens (642).

6. The cutting system as described in claim 1, characterized in that, The laser device (600) includes: Sensors are used to measure the distance between themselves and the wafer (700) end face in real time; The motion module is connected to the sensor signal; The focusing structure (640) is disposed on the motion module, and the motion module responds to the measurement data of the sensor by moving the focusing structure closer to or further away from the wafer (700).

7. The cutting system as described in claim 1, characterized in that, The laser (610) is a laser with an adjustable frequency of 50~100kHz and an adjustable average power of 0~10W.

8. The cutting system as described in claim 1, characterized in that, The laser (610) is an infrared nanosecond laser with a frequency of 50~100kHz; when the frequency of the laser (610) is 100kHz, its power is greater than 4W and its pulse width is 30~150ns.

9. The cutting system as described in claim 1, characterized in that, The laser (610) is an infrared laser with a wavelength of 1342nm, 1099nm or 1064nm; or, the laser (610) is a near-infrared laser with a wavelength of 1064nm or 1030nm.

10. A cutting method, characterized in that, Includes the following steps: S1. Place the wafer (700) in the grooving equipment (100) and ablate the front side of the wafer (700) to form a cut (groove). S2. Place the wafer (700) in the wafer casting equipment (400), add a second protective film to the front side of the wafer (700) after ablation, and peel off the first protective film on the back side of the wafer (700); S3. Place the wafer (700) in the grinding equipment (200) and thin the wafer (700) from the back side. S4. Place the wafer (700) in the cleaving device (300), and a laser beam emitted from the laser device (600) enters from the back side of the wafer (700) to modify the interior of the wafer (700); S5. Place the wafer (700) in the wafer casting equipment (400), add a third protective film to the back side of the wafer (700) after modification, and peel off the second protective film on the front side of the wafer (700); S6. Place the wafer (700) in the dicing device (500), apply external force to the wafer (700) with the added third protective film, and dic the wafer (700) into pieces.

Images