Semiconductor structure, method of manufacturing the same, chip and circuit

By vertically alternatingly stacking electrode layers and functional structure layers in a semiconductor structure, multiple lateral double-diffused field-effect transistors are formed, solving the problems of low operating current and large area, realizing the requirements of high-efficiency power integrated circuits, and improving system performance.

CN122138462APending Publication Date: 2026-06-02BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY CO LTD
Filing Date
2026-02-10
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In the existing technology, the operating current of the lateral double-diffused field-effect transistor is relatively small and the transistor area is relatively large, which makes it difficult to meet the requirements of high-efficiency power integrated circuits.

Method used

By vertically and alternately stacking n+1 electrode layers and n functional structure layers on a substrate, alternating bulk and drift regions are formed, and oxide and polysilicon layers are formed in the trenches, thus constructing a lateral double-diffused field-effect transistor and realizing the synchronous formation and expansion of multiple transistors.

Benefits of technology

It increases the operating current of semiconductor structures, improves system efficiency, reduces switching losses, lowers on-resistance, reduces device area, enhances current drive capability, and increases transistor density.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122138462A_ABST
    Figure CN122138462A_ABST
Patent Text Reader

Abstract

This invention provides a semiconductor structure, its fabrication method, chip, and circuit, relating to the field of semiconductor technology. The transistor includes: a substrate; a stacked structure comprising n+1 electrode layers and n functional structure layers vertically and alternately stacked using a synchronous process, each functional structure layer having alternating body and drift regions; m trenches formed within the stacked structure along a first horizontal direction, the m trenches extending along a second horizontal direction; 2m oxide layers, with oxide layers formed on the opposite surface of each trench wall; 2m polysilicon layers, with a polysilicon layer formed on the surface of each oxide layer; each functional structure layer, together with its upper and lower electrode layers and the oxide and polysilicon layers located on one side of the first horizontal direction of the functional structure layer, constitutes a transistor, thereby forming 2m(n-1) lateral double-diffused field-effect transistors on the substrate. This invention can improve the operating current of the semiconductor structure and reduce the transistor area.
Need to check novelty before this filing date? Find Prior Art