A semiconductor light source and its fabrication method

Abstract

This application discloses a semiconductor light source and its fabrication method. The fabrication method includes: providing a light source base and a light-emitting chip; the light source base is provided with an optical groove, and the light-emitting chip is fixed on the bottom wall of the optical groove; providing a first liquid light-transmitting adhesive, applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip, and curing it to form a first optical lens covering the light-emitting chip; providing a second optical lens, the second optical lens being provided with a hemispherical light-transmitting cover, attaching the second optical lens to the edge of the groove of the optical groove, and making the hemispherical light-transmitting cover cover the first optical lens to obtain a semiconductor light source. The inner diameter of the hemispherical light-transmitting cover is larger than the outer diameter of the first optical lens, and the refractive index of the hemispherical light-transmitting cover is higher than the refractive index of the first optical lens. This technical solution can improve the utilization rate of the light emitted by the light-emitting chip, so as to achieve high luminous efficiency optical output of the semiconductor light source in a compact structure.

Description

Technical Field

[0001] This application relates to the field of semiconductor device technology, and in particular to a semiconductor light source and its fabrication method. Background Technology

[0002] The core objective of semiconductor light source (such as LED light source) packaging technology is to protect the fragile light-emitting chip while efficiently extracting, controlling, and outputting the emitted light. In related technologies, existing semiconductor light source packaging structures typically employ a single-layer lens structure. This structure protects the light-emitting chip while simultaneously extracting, controlling, and outputting its emitted light. However, in practical applications, it has been found that the single-layer lens structure has limited utilization of the emitted light, making it difficult to achieve high-efficiency optical output within a compact structure. Summary of the Invention

[0003] The purpose of this application is to provide a semiconductor light source and its fabrication method, aiming to improve the problem that the existing semiconductor light source uses a single-layer lens structure for packaging, which limits the utilization of the light emitted by the light-emitting chip and makes it difficult to achieve high-efficiency optical output in a compact structure.

[0004] To achieve this objective, embodiments of this application provide a method for fabricating a semiconductor light source, the method comprising: A light source base and a light-emitting chip are provided. An optical groove is provided on one side surface of the light source base, and the light-emitting chip is fixed on the bottom wall of the optical groove. A first liquid light-transmitting adhesive is provided, and the first liquid light-transmitting adhesive is applied to the light-emitting surface of the light-emitting chip and cured to form a first optical lens covering the light-emitting chip; A second optical lens is provided, the second optical lens is provided with a hemispherical light-transmitting cover, the second optical lens is attached to the edge of the groove of the optical groove, and the hemispherical light-transmitting cover covers the first optical lens to obtain a semiconductor light source. The inner diameter of the hemispherical light-transmitting cover is larger than the outer diameter of the first optical lens, and the refractive index of the hemispherical light-transmitting cover is higher than the refractive index of the first optical lens.

[0005] Optionally, in some embodiments of this application, the bottom wall of the optical groove is provided with a die-bonding region, and the step of fixing the light-emitting chip on the bottom wall of the optical groove includes: The light-emitting chip is fixed on the die-bonding area using solder or die-bonding adhesive.

[0006] Optionally, in some embodiments of this application, the bottom wall of the optical groove also has a coating area surrounding the die-bonding region, and the coating area is dotted with a reflective adhesive layer.

[0007] Optionally, in some embodiments of this application, the first liquid light-transmitting adhesive is a thermosetting adhesive, and the step of applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip and curing it to form a first optical lens covering the light-emitting chip includes: The first optical lens is formed by applying a predetermined volume of the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip using a dispensing process and then curing it through a thermosetting method.

[0008] Optionally, in some embodiments of this application, the first liquid light-transmitting adhesive is an ultraviolet-curable adhesive, and the step of applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip and curing it to form a first optical lens covering the light-emitting chip includes: The first optical lens is formed by applying a pre-defined volume of the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip using a dispensing process and then curing it using ultraviolet light.

[0009] Optionally, in some embodiments of this application, the method for manufacturing the second optical lens includes: An injection mold is provided having an optical lens cavity, the optical lens cavity having at least a first cavity portion adapted to the contour of the hemispherical light-transmitting cover; A second liquid light-transmitting adhesive is provided, and the second liquid light-transmitting adhesive is injected into the cavity of the optical lens, and then cured and demolded in sequence to obtain the second optical lens.

[0010] Optionally, in some embodiments of this application, the cavity wall of the first cavity is provided with a nanoscale texture structure, wherein the nanoscale texture structure is configured to form a corresponding anti-reflection structure or light diffusion structure on the outer surface of the hemispherical light-transmitting cover.

[0011] Optionally, in some embodiments of this application, the refractive index of the first optical lens is between 1.4 and 1.6, and the refractive index of the hemispherical light-transmitting cover is between 1.6 and 1.8.

[0012] Optionally, in some embodiments of this application, the second optical lens is bonded to the edge of the slot of the optical groove by adhesive bonding, ultrasonic welding, or laser welding; and / or, The light source base is a thermally conductive metal base or a thermally conductive ceramic base.

[0013] In addition, to achieve this objective, embodiments of this application also provide a semiconductor light source, which is prepared by the above-described preparation method.

[0014] The semiconductor light source and its fabrication method provided in this application, through the above-described method steps, enable the final semiconductor light source to form an inner and outer lens structure (i.e., a first optical lens and a second optical lens) on the outer side of the light-emitting chip, and precisely match their refractive indices (i.e., the refractive index of the hemispherical light-transmitting cover of the outer second optical lens is higher than that of the inner first optical lens). This allows for the synergistic effect of the two lens structures (i.e., maximizing the reception of large-angle light from the light-emitting chip through the first optical lens, and efficiently converging the emitted light through the second optical lens), thereby more efficiently extracting and converging the emitted light from the light-emitting chip, significantly improving its utilization rate. Furthermore, since the first optical lens is formed by applying a first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip and then curing it, while the second optical lens is bonded as an independent component, the entire semiconductor light source has a compact structure, thus achieving high-efficiency optical output within a compact structure. It is evident that this technical solution can improve the problem that the existing semiconductor light source packaging structure adopts a single-layer lens structure, which has limited utilization of the light emitted by the light-emitting chip and makes it difficult to achieve high-efficiency optical output in a compact structure. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.

[0017] Figure 1 This is a flowchart illustrating the method for fabricating a semiconductor light source according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a semiconductor light source according to an embodiment of this application; Figure 3 This is a flowchart illustrating the fabrication method of the second optical lens according to an embodiment of this application.

[0018] Figure label: 1. Semiconductor light source; 10. Light source base; 11. Optical groove; 12. Reflective adhesive layer; 20. Light-emitting chip; 30. First optical lens; 40. Second optical lens; 41. Hemispherical light-transmitting cover. Detailed Implementation

[0019] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0020] In the description of this application, it should be understood that the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component centrally located at the same time.

[0021] The technical solution of this application will be further described below with reference to the accompanying drawings and specific embodiments.

[0022] Please see Figure 1 As shown, in one embodiment, this application provides a method for fabricating a semiconductor light source, which specifically includes: Step S110: Provide a light source base and a light-emitting chip. An optical groove is provided on one side surface of the light source base, and the light-emitting chip is fixed on the bottom wall of the optical groove.

[0023] It should be noted that the semiconductor light source fabrication method in this application is mainly applied to the fabrication of semiconductor light sources such as light-emitting diodes (LEDs) and laser diodes, that is, to package light-emitting chips such as LED chips and laser diode chips to obtain the corresponding semiconductor light source. Therefore, as... Figure 2As shown, to fabricate a semiconductor light source 1, a light source substrate 10 and a light-emitting chip 20 must first be provided. The light source substrate 10 is preferably made of a thermally conductive metal substrate (such as aluminum, copper, or their alloys) or a thermally conductive ceramic substrate (such as aluminum nitride or beryllium oxide). This is because both substrate materials have much higher thermal conductivity than ordinary resin substrates (typically >20 W / m·K, and even up to 200 W / m·K or more), providing efficient lateral and longitudinal conduction paths for the heat generated by the light-emitting chip 20 during operation. This significantly reduces the chip junction temperature, effectively delays light decay, and improves the device's lifespan and long-term reliability. Secondly, thermally conductive metal and ceramic substrates also possess excellent thermal stability and mechanical strength, maintaining dimensional stability during high-temperature curing or welding processes. This prevents substrate warping or solder joint cracking due to thermal expansion coefficient mismatch, providing a stable reference platform for the precise alignment of multi-stage optical lenses. Furthermore, the thermally conductive ceramic base also possesses insulating properties, making it suitable for high-power applications or those requiring electrical isolation. Metal bases, on the other hand, can achieve similar functionality through surface insulating layer treatment. This allows the light source structure to flexibly adapt to a wide range of needs, from general lighting to high-power special lighting, achieving a comprehensive optimization of efficient heat dissipation, mechanical stability, and electrical safety within a compact space. The light-emitting chip 20 is typically selected from either a light-emitting diode (LED) or a laser diode, depending on the specific requirements of the semiconductor light source 1. To enable the light source base 10 to better support the light-emitting chip 20 and complete the corresponding packaging operations, an optical groove 11 can be provided on one side surface of the light source base 10, and the light-emitting chip 20 can be fixed to the bottom wall of the optical groove 11. The shape of the optical groove 11 can be customized according to the actual functional requirements of the semiconductor light source 1, including but not limited to circular or rectangular shapes.

[0024] Step S120: Provide a first liquid light-transmitting adhesive, apply the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip, and cure it to form a first optical lens covering the light-emitting chip.

[0025] It should be noted that, as Figure 2 As shown, after the light-emitting chip 20 is fixed on the bottom wall of the optical groove 11 through the above-described steps, the first optical lens 30 can be prepared. This involves providing a first liquid light-transmitting adhesive, applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip 20, and then curing it to form the first optical lens 30 covering the light-emitting chip 20. Since the first optical lens 30 is formed by applying and curing liquid light-transmitting adhesive, the manufacturing process of the first optical lens 30 is not only simple, but also avoids generating significant stress on the light-emitting chip 20 during its fabrication, effectively protecting the fragile chip. Furthermore, the first optical lens 30 is preferably hemispherical.

[0026] Step S130: Provide a second optical lens, which is provided with a hemispherical light-transmitting cover. Fit the second optical lens with the edge of the slot of the optical groove, and cover the first optical lens with the hemispherical light-transmitting cover to obtain a semiconductor light source.

[0027] It should be noted that, as Figure 2 As shown, after the first optical lens 30 covering the light-emitting chip 20 is formed through the above-described steps, a second optical lens 40 with at least a hemispherical light-transmitting cover 41 can be further provided. That is, the second optical lens 40 can be manufactured separately as an independent component and then bonded to the optical base using a bonding method. Specifically, the second optical lens 40 is bonded to the edge of the slot in the optical groove 11, and the hemispherical light-transmitting cover 41 covers the first optical lens 30 to obtain the semiconductor light source 1. This method avoids the risk of direct thermal shock and mechanical damage to the light-emitting chip 20 during the fabrication of the second optical lens 40. Simultaneously, the inner diameter of the hemispherical light-transmitting cover 41 is larger than the outer diameter of the first optical lens 30, allowing a certain gap space to remain between the hemispherical light-transmitting cover 41 and the first optical lens 30 after the second optical lens 40 is bonded to the optical base. Furthermore, by making the refractive index of the hemispherical light-transmitting cover 41 higher than that of the first optical lens 30, a two-layer lens structure (i.e., the first optical lens 30 and the second optical lens 40) with a higher refractive index on the outer side of the light-emitting chip 20 can be formed. In this way, on the one hand, the first optical lens 30, which is close to the light-emitting chip 20, can effectively increase the critical angle at which the emitted light enters the second optical lens 40 from the light-emitting chip 20, so that more large-angle emitted light can be captured efficiently on the first time, solving the key bottleneck of low initial extraction rate. On the other hand, the second optical lens 40 can further deflect the emitted light towards the normal direction when it enters the hemispherical light-transmitting cover 41 with a higher refractive index, thereby enhancing the converging effect of the emitted light. At the same time, the hemispherical design of the hemispherical light-transmitting cover 41 ensures that the light rays incident from its interior to the air can reach the interface with a very small incident angle, almost completely avoiding total internal reflection loss. Ultimately, the two lens structures achieve a significant improvement in the utilization rate of the light emitted by the light-emitting chip 20 through a collaborative mechanism where the inner lens (i.e., the first optical lens 30) prioritizes maximizing the extraction of the light emitted by the light-emitting chip 20, and the outer lens (i.e., the second optical lens 40) prioritizes optimizing the control of the emission angle of the light emitted by the light emitted by the light-emitting chip 20.

[0028] In this way, the semiconductor light source 1 fabrication method provided in this application embodiment, through the above-described method steps, enables the final semiconductor light source 1 to form an inner and outer lens structure (i.e., a first optical lens 30 and a second optical lens 40) on the outer side of the light-emitting chip 20, and precisely match their refractive indices (i.e., the refractive index of the hemispherical light-transmitting cover 41 of the outer second optical lens 40 is higher than the refractive index of the inner first optical lens 30). Through the synergistic effect of the two lens structures (i.e., maximizing the reception of large-angle light from the light-emitting chip 20 through the first optical lens 30, and efficiently converging the emitted light through the second optical lens 40), the emitted light from the light-emitting chip 20 is extracted and converged more efficiently, thus significantly improving the utilization rate of the emitted light from the light-emitting chip 20. Simultaneously, since the first optical lens 30 is formed by applying a first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip 20 and then curing it, while the second optical lens 40 is bonded as an independent component, the entire semiconductor light source 1 has a compact structure, thereby achieving high-efficiency optical output of the semiconductor light source 1 within a compact structure.

[0029] In some examples, such as Figure 2 As shown, the bottom wall of the optical tank 11 is provided with a die-bonding area. The specific process of performing the above-mentioned method step "fixing the light-emitting chip on the bottom wall of the optical tank" is as follows: the light-emitting chip 20 is fixed on the die-bonding area using solder or die-bonding adhesive. Thus, by using solder or die-bonding adhesive to fix the light-emitting chip 20 to the die-bonding area on the bottom wall of the optical tank 11, the above-mentioned method steps can bring the following beneficial effects: First, it achieves precise positioning and reliable fixation of the light-emitting chip 20 and the optical base. The preset die-bonding area ensures that the center of the light-emitting chip 20 is symmetrical with the optical axis of the optical tank 11, laying a precise benchmark for subsequent optical design. Second, it significantly enhances the heat dissipation path and structural stability. Solder (such as eutectic bonding) or high thermal conductivity die-bonding adhesive can establish an efficient heat conduction channel from the chip junction region to the bottom wall material and form a strong mechanical support, effectively suppressing thermal stress deformation. Third, it offers high process compatibility and flexibility. Solder is suitable for high-temperature reliable packaging of high-power light-emitting chips 20, while die bonding adhesive is suitable for light-emitting chips 20 that are sensitive to thermal stress or for low-temperature processes. Both methods are compatible with existing mature semiconductor packaging production lines, which improves the versatility of the method.

[0030] In some examples, such as Figure 2As shown, the bottom wall of the optical tank 11 also has a coating area surrounding the die-bonding region, with a reflective adhesive layer 12 dotted on the coating area. Thus, the design of setting a coating area around the die-bonding region and dotting on the reflective adhesive layer 12 can bring the following beneficial effects: First, it achieves efficient recovery and utilization of lateral light: the reflective adhesive layer 12 can effectively capture the light emitted laterally from the light-emitting chip 20 and the light refracted by the first optical lens 30 and directed towards the tank wall, reflecting it in a directional manner to the light-emitting direction, significantly reducing ineffective absorption and lateral leakage of light energy within the tank, directly improving the overall light-emitting efficiency. Second, it optimizes the beam profile and uniformity: by limiting and directionally reflecting stray light, this structure effectively suppresses beam edge spillover and haloing, making the boundary of the final emitted light spot clearer and the light intensity distribution more uniform, improving the optical quality of the light source. Third, it enhances the structural integration and reliability of the optical system: the reflective adhesive layer 12 fills the gap between the chip and the trench wall, which not only provides additional mechanical buffer and protection for the chip, but also effectively isolates contaminants that may affect light efficiency, thereby enhancing the overall airtightness and long-term environmental stability of the packaging structure.

[0031] In some examples, such as Figure 2 As shown, the first liquid transparent adhesive is a thermosetting adhesive. The specific process of performing the above method step "applying the first liquid transparent adhesive to the light-emitting surface of the light-emitting chip and curing it to form the first optical lens covering the light-emitting chip" is as follows: Using a dispensing process, a preset volume of the first liquid transparent adhesive is applied to the light-emitting surface of the light-emitting chip 20, and then cured by thermosetting to form the first optical lens 30. Thus, through the above method steps, the first optical lens 30 can be formed by using thermosetting adhesive through a dispensing process, which brings the following beneficial effects: First, it ensures the precise controllability of lens forming and excellent optical performance: By controlling the amount of adhesive and the rheological properties of the adhesive, a high-quality optical surface with a preset contour can be formed on the chip surface. At the same time, the thermosetting process is highly controllable, which can effectively avoid defects such as bubbles and cracks, ensuring that the optical lens has high light transmittance and stable refractive index. Secondly, it provides gentle and reliable protection for the light-emitting chip 20: Compared to UV curing, the heat from thermosetting can be evenly distributed across the entire colloid, avoiding localized stress concentration. Furthermore, the curing process carries no risk of UV radiation damage, providing a lower-stress, safer, and more reliable packaging environment for the fragile light-emitting chip 20 and the gold wire structure. Thirdly, it improves process compatibility and large-scale production efficiency: The thermosetting process is more adaptable to the shape of the lens after dispensing, is not limited by curing in shaded areas, and has good compatibility with most semiconductor packaging production lines' reflow soldering and other thermal processes, facilitating integration for automated and mass production.

[0032] In some examples, such as Figure 2As shown, the first liquid transparent adhesive is a UV-curable adhesive. The specific process of performing the above method step "applying the first liquid transparent adhesive to the light-emitting surface of the light-emitting chip and curing it to form a first optical lens covering the light-emitting chip" is as follows: Using a dispensing process, a preset volume of the first liquid transparent adhesive is applied to the light-emitting surface of the light-emitting chip 20, and then cured by UV curing to form the first optical lens 30. Thus, through the above method steps, UV-curable adhesive can be used as the first liquid transparent adhesive, and the first optical lens 30 can be formed through precise dispensing and UV curing, bringing the following beneficial effects: First, it achieves efficient and precise rapid molding. UV curing can be completed within seconds, with fast curing speed and concentrated energy, which is conducive to precise control of the lens shape and maintenance of the designed curvature, while greatly improving production cycle time. Second, it significantly reduces the risk of process heat impact and thermal stress. The curing process generates almost no heat, effectively avoiding the thermal shock and thermal stress damage that traditional thermal curing may cause to the light-emitting chip 20 and the fragile gold wire structure, making it particularly suitable for temperature-sensitive high-performance chip packaging. In addition, this process has excellent local curing ability and process flexibility. It can achieve selective curing by controlling the area and time of ultraviolet light irradiation, which is convenient for the layer-by-layer construction of complex structures or the independent packaging of multiple chips. Moreover, the colloid has good fluidity before curing, and it is easier to accurately control the initial morphology by dispensing parameters.

[0033] In some examples, such as Figure 3 As shown, the specific method for manufacturing the aforementioned second optical lens is as follows: Step S11: Provide an injection mold with an optical lens cavity, the optical lens cavity having at least a first cavity portion adapted to the contour of the hemispherical light-transmitting cover.

[0034] Step S12: Provide a second liquid light-transmitting adhesive, inject the second liquid light-transmitting adhesive into the optical lens cavity, and perform curing and demolding processes in sequence to obtain the second optical lens.

[0035] It should be noted that, as Figure 2 As shown, in order to facilitate the bonding and connection between the second optical lens 40 and the optical base, the second optical lens 40 is also provided with a connecting part surrounding the hemispherical light-transmitting cover 41, so as to better bond and connect with the optical base through the connecting part. Therefore, the optical lens cavity in the above method steps should also have a second cavity that matches the contour of the connecting part.

[0036] In this way, the fabrication of the second optical lens 40 through the above-described methods and steps yields the following beneficial effects: First, the fabrication method utilizes an injection mold with a precise optical lens cavity, particularly the first cavity which is precisely fitted to the contour of the hemispherical light-transmitting cover 41. This allows for the one-time molding of a second optical lens 40 with high surface finish, stable dimensional accuracy, and optical consistency, thereby ensuring high uniformity of optical performance among the various light source units in mass production. Second, by injecting the second liquid light-transmitting adhesive and performing controlled curing, not only can various optical adhesive materials that form a refractive index gradient with the first optical lens 30 be flexibly selected to achieve more optimized beam control, but the curing process is also completed within a sealed injection mold, effectively avoiding external contamination and reducing curing stress. Furthermore, the injection molding process is mature and efficient, and when combined with demolding, it is suitable for large-scale automated production. While ensuring optical quality, it significantly reduces the manufacturing cost of a single optical lens, enhancing the overall market competitiveness of the semiconductor light source 1 product.

[0037] In some examples, the cavity wall of the first cavity mentioned above is provided with a nanoscale textured structure. This nanoscale textured structure is configured to form a corresponding anti-reflection structure or light diffusion structure on the outer surface of the hemispherical light-transmitting cover 41. Thus, by providing a nanoscale textured structure in the first cavity of the optical lens cavity, when the second optical lens 40 is injection molded through this cavity, the outer surface of its hemispherical light-transmitting cover 41 (i.e., the surface of the hemispherical light-transmitting cover 41 away from the first optical lens 30) can simultaneously form an anti-reflection structure or a light diffusion structure. This design offers the following advantages: First, it allows for the one-time molding of a highly functional optical surface without adding extra processing steps, significantly improving manufacturing efficiency and reducing the processing cost of complex optical structures. Second, through precisely designed nanoscale textures, the behavior of light on the outer surface of the second optical lens 40 can be effectively controlled: if the texture is used to form an anti-reflection structure, Fresnel reflection loss can be significantly reduced, increasing light extraction efficiency by 3%-5% and reducing stray light interference. When used to form a light diffusion structure, it can homogenize the emitted beam, effectively eliminate the central spot and suppress glare, improving lighting comfort and uniformity. Furthermore, this integrated structure avoids problems such as insufficient adhesion, interface aging, or thermal expansion mismatch that may occur with traditional coating or bonding processes, ensuring the long-term reliability and stability of optical functions in harsh environments such as high temperature and high humidity. This provides a crucial guarantee for the semiconductor light source 1 to achieve high-performance, long-life optical output.

[0038] In some examples, the refractive index of the first optical lens 30 is between 1.4 and 1.6, and the refractive index of the hemispherical light-transmitting cover 41 is between 1.6 and 1.8. Thus, by setting the above parameters, a refractive index gradient design that increases from the inside out can be formed by limiting the refractive index of the first optical lens 30 to between 1.4 and 1.6, and the refractive index of the hemispherical light-transmitting cover 41 to between 1.6 and 1.8. This results in the following beneficial effects: First, this gradual refractive index distribution can effectively reduce Fresnel reflection loss caused by abrupt changes in refractive index at the interface during the propagation of emitted light through the multilayer medium from the light-emitting chip 20 to air, especially promoting the transmission of large-angle incident light, thereby significantly improving the overall light extraction efficiency. Secondly, the combination of a lower refractive index on the inside and a higher refractive index on the outside provides greater design freedom for beam control: the first optical lens 30 with a lower refractive index can more smoothly receive and initially converge the wide-angle light emitted by the light-emitting chip 20, while the second optical lens 40 with a higher refractive index can more effectively collimate or converge the beam. The synergistic effect of the two can achieve more precise and efficient beam shaping within a compact space, optimizing the light output angle and intensity distribution. In addition, this refractive index range is highly compatible with the characteristics of commonly used optical silicone, epoxy resin and other encapsulation materials, ensuring the comprehensive advantages of the materials in terms of process compatibility, long-term weather resistance and cost control while achieving excellent optical performance.

[0039] In some examples, such as Figure 2As shown, the second optical lens 40 is bonded to the edge of the slot of the optical cavity 11 using adhesive bonding, ultrasonic welding, or laser welding. This method of bonding the second optical lens 40 to the edge of the slot of the optical cavity 11 through adhesive bonding, ultrasonic welding, or laser welding offers the following advantages: First, it provides diverse and reliable sealing and fixing solutions, ensuring the robustness and long-term stability of the mechanical connection between the secondary optical system and the light source base 10. Adhesive bonding can adapt to different material interfaces and achieve stress buffering; ultrasonic welding can quickly achieve high-strength molecular bonding of thermoplastic materials locally; and laser welding can achieve precise, non-contact hermetically sealed assembly, effectively preventing external moisture, dust, and corrosive chemical substances from entering the optical cavity. Second, these bonding methods all have high process controllability and adaptability, compatible with different production cycles and automated production line requirements. For example, adhesives can be precisely applied with controlled dosage and position, while ultrasonic and laser welding feature millisecond-level rapid curing, significantly improving assembly efficiency. Furthermore, the above-mentioned combination method can complete the final packaging without generating thermal stress or mechanical impact on the internally packaged light-emitting chip 20 and the first optical lens 30, thus maximizing the protection of the integrity and functionality of the previous precision optical structure. This achieves a compact packaging structure while ensuring the overall reliability, environmental durability and consistent optical output performance of the semiconductor light source 1.

[0040] In one embodiment, such as Figure 2 As shown, this application embodiment also provides a semiconductor light source 1, which is prepared by the preparation method of the above embodiment. Therefore, since the semiconductor light source 1 of this application embodiment is prepared by the preparation method of the above embodiment, it can improve the utilization rate of the emitted light from the light-emitting chip 20, thereby achieving high-efficiency optical output within a compact structure.

[0041] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A method for fabricating a semiconductor light source, characterized in that, The preparation method includes: A light source base and a light-emitting chip are provided. An optical groove is provided on one side surface of the light source base, and the light-emitting chip is fixed on the bottom wall of the optical groove. A first liquid light-transmitting adhesive is provided, and the first liquid light-transmitting adhesive is applied to the light-emitting surface of the light-emitting chip and cured to form a first optical lens covering the light-emitting chip; A second optical lens is provided, the second optical lens is provided with a hemispherical light-transmitting cover, the second optical lens is attached to the edge of the groove of the optical groove, and the hemispherical light-transmitting cover covers the first optical lens to obtain a semiconductor light source. The inner diameter of the hemispherical light-transmitting cover is larger than the outer diameter of the first optical lens, and the refractive index of the hemispherical light-transmitting cover is higher than the refractive index of the first optical lens.

2. The preparation method according to claim 1, characterized in that, The bottom wall of the optical groove is provided with a die-bonding region, and the step of fixing the light-emitting chip on the bottom wall of the optical groove includes: The light-emitting chip is fixed on the die-bonding area using solder or die-bonding adhesive.

3. The preparation method according to claim 2, characterized in that, The bottom wall of the optical groove also has a coating area surrounding the die-bonding area, and the coating area is dotted with a reflective adhesive layer.

4. The preparation method according to claim 1, characterized in that, The first liquid light-transmitting adhesive is a thermosetting adhesive. The step of applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip and then curing it to form a first optical lens covering the light-emitting chip includes: The first optical lens is formed by applying a predetermined volume of the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip using a dispensing process and then curing it through a thermosetting method.

5. The preparation method according to claim 1, characterized in that, The first liquid light-transmitting adhesive is a UV-curable adhesive. The step of applying the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip and then curing it to form a first optical lens covering the light-emitting chip includes: The first optical lens is formed by applying a pre-defined volume of the first liquid light-transmitting adhesive to the light-emitting surface of the light-emitting chip using a dispensing process and then curing it using ultraviolet light.

6. The preparation method according to claim 1, characterized in that, The method for manufacturing the second optical lens includes: An injection mold is provided having an optical lens cavity, the optical lens cavity having at least a first cavity portion adapted to the contour of the hemispherical light-transmitting cover; A second liquid light-transmitting adhesive is provided, and the second liquid light-transmitting adhesive is injected into the cavity of the optical lens, and then cured and demolded in sequence to obtain the second optical lens.

7. The preparation method according to claim 1, characterized in that, The cavity wall of the first cavity is provided with a nanoscale texture structure, which is configured to form a corresponding anti-reflection structure or light diffusion structure on the outer surface of the hemispherical light-transmitting cover.

8. The preparation method according to any one of claims 1-7, characterized in that, The refractive index of the first optical lens is between 1.4 and 1.6, and the refractive index of the hemispherical light-transmitting cover is between 1.6 and 1.

8.

9. The preparation method according to any one of claims 1-7, characterized in that, The second optical lens is bonded to the edge of the slot of the optical groove by adhesive bonding, ultrasonic welding, or laser welding; and / or, The light source base is a thermally conductive metal base or a thermally conductive ceramic base.

10. A semiconductor light source, characterized in that, The semiconductor light source is prepared by the preparation method according to any one of claims 1-9.

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