Light emitting diode and method of manufacturing the same

Abstract

This invention discloses a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises: a semiconductor stack including a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a first through-well located in the semiconductor stack, wherein the first through-well includes sidewalls and a bottom, wherein the sidewalls include the sidewalls of the second semiconductor layer, the sidewalls of the light-emitting layer, and a portion of the sidewalls of the first semiconductor layer, and the bottom includes the upper surface of the first semiconductor layer; a conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the conductive layer, including a first opening and a first blocking island, wherein the first blocking island covers the first through-well; a first electrode layer formed on the insulating layer and electrically connected to the first semiconductor layer; and a second electrode layer formed on the insulating layer and contacting the conductive layer through the first opening; wherein, in a top view, the first opening surrounds the first through-well and the first blocking island.

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