Semiconductor structure, method of manufacturing thereof and electronic device

By introducing a pseudo-mandrel structure into the semiconductor structure, the problem of CD loading effect is solved, resulting in smaller critical dimension variation and higher device performance, while reducing process costs and dependencies.

CN122138630APending Publication Date: 2026-06-02SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Filing Date
2024-11-29
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In semiconductor manufacturing, existing technologies suffer from critical dimension loading (CD loading) in spacer processes, resulting in poor critical dimension consistency of photomasks. Furthermore, the OPC compensation model is time-consuming to establish and depends on the etching process.

Method used

In the fabrication of semiconductor structures, a pseudo-mandrel structure is introduced into the first mandrel pattern to partially fill the area used to form the second mandrel pattern, thereby reducing the area of ​​blank regions, increasing pattern density, reducing CD loading effect, and optimizing device performance and process windows through multilayer mask patterns.

Benefits of technology

It effectively reduces critical dimension variation, optimizes device performance and process window, reduces process costs, avoids dependence on OPC compensation model, and improves the consistency of mask pattern etching process.

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Abstract

This application relates to the field of semiconductor technology, and particularly to a semiconductor structure, its fabrication method, and electronic device. The method includes forming a first mandrel pattern on a substrate, comprising a plurality of first mandrel structures and at least one pseudo-mandrel structure, wherein the pseudo-mandrel structure is located in at least a portion of the first mandrel pattern for forming a second mandrel pattern; forming a first mask pattern on the substrate based on the first mandrel pattern, the first mask pattern including first spacers formed on the sidewalls of the first mandrel structures and opening regions corresponding to the pseudo-mandrel structures; forming a second mandrel pattern on the substrate having the first mask pattern, comprising a plurality of second mandrel structures, wherein at least a portion of the second mandrel structures are located in the opening regions; and forming a second mask pattern based on each first spacer and each second mandrel structure, the second mask pattern including a plurality of second spacers formed on the sidewalls of the first spacers and the sidewalls of the second mandrel structures. This application can significantly reduce the CD loading effect.
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