A semiconductor device platform and method of operation

Abstract

This invention relates to the field of wafer processing equipment technology, and more particularly to a semiconductor equipment platform and its operating method, comprising a main cavity, at least one process cavity, and at least one loading cavity. A handling robot is installed inside the main cavity. At least one process cavity is connected to the main cavity. At least one loading cavity is connected to the main cavity. The loading cavity is connected to an external air path through a main air inlet pipe and a main air outlet pipe, and the loading cavity is connected to an auxiliary cavity through a first pipe. The auxiliary cavity is connected to an external air path through at least two second pipes. This invention significantly shortens the total time of pressure switching in the loading cavity by pre-filling or de-filling the auxiliary cavity to reach the target pressure before pressure switching in the loading cavity, and by quickly connecting it to the loading cavity during switching to achieve pressure pre-balancing.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a semiconductor equipment platform and its operating method. Background Technology

[0002] In semiconductor manufacturing processes such as plasma dry resist removal, the capacity of the equipment is limited by the efficiency of wafer transfer between modules within the equipment, especially for process formulations with short processing times. The core bottleneck of existing technology lies in the loading chamber of the transfer platform that enables wafer switching between vacuum and atmospheric environments. The vacuuming and degassing (vacuum / atmosphere switching) process is time-consuming. When the loading chamber is undergoing pressure switching, the robot responsible for handling the wafers must wait for the switching to complete before proceeding to the next step. This directly leads to idle time in the process chamber, reducing the overall capacity of the equipment. Summary of the Invention

[0003] This invention relates to a semiconductor device platform and its operating method, with the aim of shortening the total time for switching the pressure in the loading chamber.

[0004] To achieve the above objectives, the present invention provides a semiconductor device platform, comprising: The main cavity contains a transport robot for transferring wafers under initial pressure. At least one process chamber is connected to the main chamber and is used to process the wafer. At least one loading chamber, connected to the main chamber, is used to switch between the first pressure and the second pressure to load and unload the wafer; The loading cavity is connected to an external air path via a main air inlet pipe and a main air outlet pipe. An auxiliary cavity is connected to the loading cavity via a first pipe. The auxiliary cavity is connected to the external air path via at least two second pipes. The auxiliary cavity is used to pre-inflate or de-inflate the loading cavity before pressure switching. During pressure switching, the auxiliary cavity, in conjunction with the main air inlet pipe and the main air outlet pipe, performs inflation or de-inflation to shorten the pressure switching time within the loading cavity. The pressure switching includes switching from the first pressure to the second pressure, or switching from the second pressure to the first pressure.

[0005] Optionally, a heating device is provided in the auxiliary cavity to preheat the gas in the auxiliary cavity, so as to reduce the temperature difference between the gas entering the loading cavity from the auxiliary cavity and the wafer in the loading cavity.

[0006] Optionally, the heating device includes a first heating element, a second heating element, and a buffer elastic element; The first heating element is fixedly disposed in the auxiliary cavity. The first heating element is connected to the second heating element through the buffer elastic element so that the second heating element is movably disposed in the auxiliary cavity. The second heating element is disposed close to the opening of the first pipe that communicates with the auxiliary cavity. Both the first heating element and the second heating element have several vent holes, and the orthographic projections of the first heating element and the second heating element onto the plane where the opening of the first pipe is located both cover the opening of the first pipe.

[0007] Optionally, the auxiliary cavity includes a plurality of first auxiliary cavities and / or a plurality of second auxiliary cavities; A plurality of the first auxiliary cavities are connected in series sequentially, and a plurality of the second auxiliary cavities are connected in parallel; Furthermore, the overall volume of the auxiliary cavity is less than or equal to the volume of the loading cavity.

[0008] Optionally, the semiconductor device platform further includes a control module. A first valve is provided on the main air intake pipe, a second valve is provided on the main air outlet pipe, a third valve is provided on the first pipe, and at least two second pipes include an auxiliary air intake pipe and an auxiliary air outlet pipe. A fourth valve is provided on the auxiliary air intake pipe, and a fifth valve is provided on the auxiliary air outlet pipe. The control module is connected to the first valve, the second valve, the third valve, the fourth valve, and the fifth valve respectively to achieve independent control of each pipe.

[0009] Optionally, a pressure sensor and a temperature sensor are provided in the loading cavity and / or the auxiliary cavity to monitor the pressure and temperature in the loading cavity and / or the auxiliary cavity. The pressure sensor and the temperature sensor are both connected to the control module. The control module controls the opening and closing of the first valve, the second valve, the third valve, the fourth valve and the fifth valve based on the information monitored by the pressure sensor and the temperature sensor.

[0010] To achieve the above objectives, the present invention also provides a method for operating a semiconductor device platform, applied to the semiconductor device platform, the method comprising the following steps: S1: Before the pressure switching operation of the loading cavity begins, the pressure in the auxiliary cavity is pre-adjusted to the target pressure, which is either a first pressure or a second pressure; S2: When a switching command is received, the auxiliary cavity is connected to the loading cavity so that the loading cavity can be inflated or deflated through the auxiliary cavity; S3: After the pressure between the auxiliary cavity and the loading cavity is balanced, disconnect the connection between the auxiliary cavity and the loading cavity, and perform final pressure adjustment on the loading cavity through the main air inlet pipe and the main air outlet pipe to make the loading cavity reach the target pressure.

[0011] Optionally, the pressure switching of the loading cavity includes switching from a first pressure to a second pressure, and the steps for switching from the first pressure to the second pressure are as follows: S311: Before the loading cavity switches from the first pressure to the second pressure, control the opening of the fourth valve to pre-charge the auxiliary cavity with air so that the auxiliary cavity reaches the second pressure; S312: Control the closing of the fourth valve and the opening of the third valve to allow the gas in the auxiliary cavity to enter the loading cavity; S313: After the pressure between the auxiliary cavity and the loading cavity is balanced, the third valve is closed and the first valve is opened to continue filling the loading cavity with air to the second pressure.

[0012] Optionally, the pressure switching of the loading cavity includes switching from a second pressure to a first pressure, and the steps for switching from the second pressure to the first pressure are as follows: S321: Before the loading cavity switches from the second pressure to the first pressure, control the opening of the fifth valve to pre-evacuate the auxiliary cavity to bring the loading cavity to the first pressure; S322: Control the closing of the fifth valve and the opening of the third valve to allow the gas in the loading chamber to enter the auxiliary chamber; S323: After the pressure between the auxiliary cavity and the loading cavity is balanced, control the closing of the third valve and the opening of the second valve to evacuate the loading cavity to the first pressure.

[0013] Optionally, the step of pre-inflating the auxiliary cavity to the second pressure in step S311 further includes: The heating device is activated to preheat the gas entering the auxiliary cavity.

[0014] Optionally, the first pressure is less than the second pressure.

[0015] The beneficial effects of this invention are as follows: This invention significantly shortens the total time for pressure switching in the loading cavity by pre-inflating or deflating the auxiliary cavity to reach the target pressure before pressure switching in the loading cavity, and then quickly connecting it to the loading cavity during switching to achieve pressure pre-balancing. This design effectively reduces the waiting time of the handling robot, improves the wafer transfer efficiency between cavities, and thus increases the utilization rate of the process cavities and the overall capacity of the equipment. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the semiconductor device platform in an embodiment of the present invention; Figure 2 This is a flowchart illustrating the operation method of the semiconductor device platform in an embodiment of the present invention; Figure 3 This is a flowchart illustrating the switching of the loading cavity from a first pressure to a second pressure in an embodiment of the present invention; Figure 4 This is a flowchart illustrating the switching of the loading cavity from a second pressure to a first pressure in an embodiment of the present invention.

[0017] Explanation of reference numerals in the attached figures: 1. Main cavity; 2. Process cavity; 3. Loading cavity; 4. Main air inlet pipe; 5. Main air outlet pipe; 6. Auxiliary cavity; 7. First pipe; 8. Second pipe; 9. First valve; 10. Second valve; 11. Third valve; 12. Fourth valve; 13. Fifth valve. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0019] This invention relates to a semiconductor device platform and its operating method, with the aim of shortening the total time for switching the pressure in the loading chamber.

[0020] To address the problems existing in the prior art, embodiments of the present invention provide a semiconductor device platform, such as... Figure 1As shown, the semiconductor equipment platform includes a main cavity 1, at least one process cavity 2, and at least one loading cavity 3. In this embodiment, the main cavity 1 serves as a hub for transferring wafers under a constant first pressure (usually vacuum), ensuring high cleanliness and high efficiency in wafer transfer within the equipment. The at least one process cavity 2 is responsible for performing specific process treatments on the wafers and is the core of the functionality. The at least one loading cavity 3 serves as the only interface with the external environment and is specifically responsible for switching between vacuum (first pressure) and atmospheric pressure (second pressure) to achieve wafer loading or unloading.

[0021] In one embodiment, such as Figure 1 As shown, the main cavity 1 is equipped with a handling robot for transferring wafers under a first pressure. At least one process cavity 2 is connected to the main cavity 1 for processing the wafers; at least one loading cavity 3 is connected to the main cavity 1 for switching between the first pressure and the second pressure to load and unload the wafers.

[0022] In one embodiment, the loading cavity 3 is connected to an external air passage through a main air inlet pipe 4 and a main air outlet pipe 5, respectively. The loading cavity 3 is connected to an auxiliary cavity 6 through a first pipe 7. The auxiliary cavity 6 is connected to the external air passage through at least two second pipes 8. The auxiliary cavity 6 is used to pre-inflate or de-inflate the loading cavity 3 before pressure switching, so that when the loading cavity 3 undergoes pressure switching, the auxiliary cavity 6 cooperates with the main air inlet pipe 4 and the main air outlet pipe 5 to inflate or de-inflate, thereby shortening the pressure switching time in the loading cavity 3. The pressure switching includes switching from the first pressure to the second pressure, or switching from the second pressure to the first pressure.

[0023] This embodiment creatively introduces a "pre-balancing" mechanism, significantly improving pressure switching efficiency. It divides the pressure switching process into two parallel, sequential stages: In the first stage, before the actual switching command is issued to the loading chamber 3, it is pre-charged (raised to a second pressure, such as atmospheric pressure) or evacuated (reduced to a first pressure, such as vacuum) through the second pipe 8 of the auxiliary chamber 6, making it a prepared "energy storage tank" with the target pressure. In the second stage, when the switching command is issued, the auxiliary chamber 6 is immediately connected to the loading chamber 3 through the first pipe 7, utilizing the significant pressure difference between them to achieve instantaneous pressure pre-balancing, greatly offsetting the initial pressure difference. Then, the main intake pipe 4 and main exhaust pipe 5 are used to complete the final pressure fine-tuning. This "pre-preparation" plus "rapid neutralization" method transforms the original process, which relied entirely on the slow charging and discharging of the main intake pipe 4 and main exhaust pipe 5, into efficient pre-neutralization using the auxiliary chamber 6, thereby significantly shortening the total time required for the loading chamber 3 to complete a full pressure switch.

[0024] In one embodiment, a heating device is provided in the auxiliary cavity 6 to preheat the gas inside the auxiliary cavity 6, thereby reducing the temperature difference between the gas entering the loading cavity 3 from the auxiliary cavity 6 and the wafer inside the loading cavity 3. By adding a heating device in the auxiliary cavity 6 to preheat the gas about to enter the loading cavity 3, the temperature difference between the gas entering the loading cavity 3 during the pre-equilibration process and the original wafer inside the loading cavity 3 can be effectively controlled and reduced. By preheating the gas, the thermal shock to the wafer caused by rapid gas inflow (e.g., from vacuum to atmospheric pressure) or outflow (e.g., from atmospheric pressure to vacuum) during pressure switching can be mitigated. This not only protects the structural integrity of the wafer and prevents potential damage, but also provides more stable initial conditions for subsequent process steps (especially temperature-sensitive processing steps), thereby improving process reliability and product yield.

[0025] In one embodiment, the heating device includes a first heating element, a second heating element, and a buffer elastic element. The first heating element is fixedly disposed within the auxiliary cavity 6, and the first heating element is connected to the second heating element through the buffer elastic element, so that the second heating element is movably disposed within the auxiliary cavity 6, and the second heating element is disposed near the opening of the first pipe 7 that communicates with the auxiliary cavity 6; both the first heating element and the second heating element have a plurality of vent holes, and the orthographic projection structure of the first heating element and the second heating element on the plane where the opening of the first pipe 7 is located both cover the opening of the first pipe 7.

[0026] This embodiment optimizes the stability and uniformity of gas preheating and entry into the loading cavity 3 through a double-layer buffer heating structure. The first heating element serves as a fixed heating base, providing the main preheating capacity; the second heating element is connected by a buffer elastic element, allowing it to be movably positioned near the opening of the first pipe 7 (connecting the auxiliary cavity 6 and the loading cavity 3). Its orthographic projection structure covers the opening, ensuring that the gas entering the loading cavity 3 from the opening of the first pipe 7 will inevitably have sufficient contact with the heating device. The core advantages of this design are: firstly, the double-layer structure can preheat the gas more uniformly and fully, reducing the temperature gradient; secondly, the design of the buffer elastic element allows the second heating element to generate micro-movements when the gas flows rapidly, which can balance the gas impact and reduce turbulence, allowing the airflow to enter the loading cavity 3 more smoothly, thereby further reducing the thermal shock to the internal wafer and improving process stability and protection.

[0027] In one embodiment, the first and second heating elements can be structured as porous plates, spiral-shaped mosquito coils, mesh structures, or grid structures. Their design must meet two key requirements: First, both elements must have several vent holes to ensure smooth gas flow through the heating device and sufficient contact with the heating element (such as a resistance wire) for efficient preheating; second, the orthographic projection of the first and second heating elements onto the plane of the opening at the junction of the first pipe and the auxiliary cavity must completely cover the opening. This covering design ensures that all gas flowing from the auxiliary cavity 6 to the loading cavity 3 must pass through both heating structures before exiting, thereby forcibly and fully exchanging heat, maximizing gas preheating effect and temperature uniformity, and ultimately reducing temperature difference and thermal shock.

[0028] In one embodiment, the buffer elastic element can be a helical spring, wave spring, elastic washer, or elastic rubber / silicone cylinder, etc. It serves as a deformable connecting component, positioned between the fixed first heating element and the movable second heating element. The advantage of this design is that when gas flows rapidly through the second heating element, the buffer elastic element can absorb and buffer the gas impact force, allowing the second heating element to undergo slight movement towards or away from the opening of the first pipe within a specific range. This balances the airflow and reduces turbulence, resulting in a smoother airflow from the auxiliary cavity 6 into the loading cavity 3.

[0029] In one embodiment, the auxiliary cavity 6 includes a plurality of first auxiliary cavities and / or a plurality of second auxiliary cavities; the plurality of first auxiliary cavities are connected in series sequentially, and the plurality of second auxiliary cavities are connected in parallel; and the overall volume of the auxiliary cavity 6 is less than or equal to the volume of the loading cavity 3.

[0030] This embodiment provides a flexible and scalable auxiliary chamber 6 configuration to meet the needs of different efficiencies and equipment layouts. The auxiliary chamber 6 is designed as two basic modules: series (first auxiliary chamber) and / or parallel (second auxiliary chamber), making it more flexible and scalable in design and application. The series structure is suitable for scenarios with narrow spaces and staged pressure pretreatment, allowing for extended gas flow paths and step-by-step processing; the parallel structure enables multiple second auxiliary chambers to work simultaneously, significantly improving gas throughput and pre-balancing speed. More importantly, the overall volume of the auxiliary chamber 6 is limited to be less than or equal to the volume of the loading chamber 3 to achieve optimal efficiency and balance during the pressure pre-balancing stage. If the volume of the auxiliary chamber 6 is too large, its own charging and discharging time will be too long, negating the meaning of "pre-balancing"; while if the volume is too small, the amount of gas it can store or release is limited, resulting in negligible neutralization of the pressure in the loading chamber 3. Setting it within this volume range maximizes the effectiveness of the auxiliary chamber 6 in the rapid pressure neutralization stage without significantly increasing system complexity and response time.

[0031] In one embodiment, such as Figure 1 As shown, the semiconductor equipment platform also includes a control module. A first valve 9 is provided on the main air intake pipe 4, a second valve 10 is provided on the main air outlet pipe 5, a third valve 11 is provided on the first pipe 7, and at least two second pipes 8 include an auxiliary air intake pipe and an auxiliary air outlet pipe. A fourth valve 12 is provided on the auxiliary air intake pipe, and a fifth valve 13 is provided on the auxiliary air outlet pipe. The control module is connected to the first valve 9, the second valve 10, the third valve 11, the fourth valve 12, and the fifth valve 13 respectively to achieve independent control of each pipe.

[0032] This embodiment combines a centralized control module with an independent valve system to achieve precise, coordinated, and automated control of the pressure switching process. The control module, acting as the "brain," coordinates the main intake pipe 4 (first valve 9), the main exhaust pipe 5 (second valve 10), the first pipe 7 (third valve 11) connecting the loading chamber 3 and the auxiliary chamber 6, and the auxiliary intake pipe (fourth valve 12) and auxiliary exhaust pipe (fifth valve 13) connecting the auxiliary chamber 6 to the external air path. This allows the system to independently open or close specific valves at different stages according to preset logic. It achieves automated execution of the "pre-balancing" strategy: before switching, the auxiliary chamber 6 can be preparatoryly inflated or deflated using the fourth valve 12 and the fifth valve 13; during switching, the third valve 11 can be quickly opened to connect the auxiliary chamber 6 and the loading chamber 3 to balance the pressure; finally, the first valve 9 or the second valve 10 is used to perform final fine-tuning of the pressure using the external air path.

[0033] In one embodiment, the control module can be a programmable logic system based on an industrial controller, such as a PLC (Programmable Logic Controller) or an industrial computer with a dedicated pressure control algorithm.

[0034] In one embodiment, a pressure sensor and a temperature sensor are provided in the loading cavity 3 and / or the auxiliary cavity 6 to monitor the pressure and temperature within the loading cavity 3 and / or the auxiliary cavity 6. Both the pressure sensor and the temperature sensor are connected to a control module, and the control module controls the opening and closing of the first valve 9, the second valve 10, the third valve 11, the fourth valve 12, and the fifth valve 13 based on the information monitored by the pressure sensor and the temperature sensor.

[0035] This embodiment achieves a precise and dynamic closed-loop control mechanism by deploying pressure and temperature sensors within the loading chamber 3 and / or auxiliary chamber 6, and feeding the monitoring signals back to the control module in real time. The control module no longer relies on a preset fixed timing sequence to control the valves; instead, it intelligently determines and triggers valve opening and closing based on the actual pressure and temperature values ​​within the loading chamber 3 and / or auxiliary chamber 6. During pressure switching, the pressure sensors accurately monitor pressure changes in both chambers, enabling the control module to accurately determine key points such as "whether the pressure in auxiliary chamber 6 has reached the target value," "whether the pressure in loading chamber 3 and auxiliary chamber 6 has balanced after connection," and "whether the final pressure in loading chamber 3 meets the standard," thereby optimizing valve opening and closing timing and avoiding over-charging / discharging or insufficient switching. The addition of temperature sensors, especially when the auxiliary chamber 6 is equipped with a heating device, ensures that the gas is preheated to the set temperature, effectively controlling the temperature difference between the gas entering the loading chamber 3 and the wafer. This feedback control based on real-time sensor data greatly improves the accuracy, stability, and repeatability of the pressure switching process. It is a key technology guarantee for achieving an efficient, reliable, and automated "pre-balancing" workflow, and ultimately improving the overall capacity and process yield of the equipment.

[0036] To address the problems existing in the prior art, embodiments of the present invention also provide a method for operating a semiconductor device platform, applied to the semiconductor device platform, such as... Figure 2 As shown, the working method includes the following steps: S1: Before the loading cavity undergoes pressure switching, the auxiliary cavity is pre-inflated or evacuated to adjust the pressure inside the auxiliary cavity 6 to the target pressure, which is either the first pressure or the second pressure. This step is the preparatory stage of the "pre-balancing" process. It utilizes the fact that the auxiliary cavity 6 is separated from the loading cavity 3 and is directly connected to the external air path through the second pipe 8. Before the loading cavity 3 receives the switching command and is still in the current pressure state (such as vacuum), the auxiliary cavity 6 is pre-inflated or evacuated independently.

[0037] S2: Upon receiving a switching command, the auxiliary chamber 6 is connected to the loading chamber 3 to inflate or de-inflate the loading chamber 3 via the auxiliary chamber 6. This step is the execution phase of the "pre-balancing" process, which uses the auxiliary chamber 6 prepared in the previous step to momentarily neutralize the pressure in the loading chamber 3. When the control module receives a pressure switching command from the upper system or operator, it immediately issues a control signal to open the third valve 11 on the first pipe 7 connecting the loading chamber 3 and the auxiliary chamber 6. Since the auxiliary chamber 6 (as an "energy storage tank") has been pre-adjusted to the target pressure in step S1, while the loading chamber 3 maintains its original pressure state, a significant pressure difference exists between the two at the moment the third valve 11 is opened. According to the principles of gas dynamics, gas in the high-pressure region will spontaneously and rapidly flow to the low-pressure region. Therefore, when the third valve 11 is opened, the two chambers are instantly connected through the first pipe 7. The gas in the high-pressure chamber will quickly flow to the low-pressure chamber, causing the pressure in the loading chamber 3 and the auxiliary chamber 6 to become consistent in a very short time, achieving rapid equilibrium. This process significantly offsets the difference between the initial pressure and the target pressure inside the loading chamber 3, thus transforming most of the workload that originally required slow inflation or deflation through the main intake pipe 4 or the main exhaust pipe 5 into instantaneous pressure transmission achieved through internal connection.

[0038] S3: After pressure balance between the auxiliary chamber 6 and the loading chamber 3, the connection between the auxiliary chamber 6 and the loading chamber 3 is disconnected, and the loading chamber 3 is finally pressure-regulated through the main intake pipe 4 and the main exhaust pipe 5 to bring it to the target pressure, thereby achieving pressure switching. This step is the final stage of the "pre-balancing" process, which performs final fine-tuning and locking of the pressure in the loading chamber 3 to achieve precise switching. After rapid pressure balance is achieved by connecting the loading chamber 3 and the auxiliary chamber 6 in step S2, the pressures of the two chambers tend to be consistent, but this is usually not the precise target pressure (for example, in a pre-filling scenario switching from vacuum to atmospheric pressure, the balanced pressure is an intermediate value between the two). At this time, the control module will first close the third valve 11 to disconnect and isolate the auxiliary chamber 6 from the main passage. Then, the system switches to final adjustment of the loading chamber 3 through the main intake pipe 4 or the main exhaust pipe 5.

[0039] In one embodiment, such as Figure 3 As shown, the pressure switching of the loading cavity includes switching from a first pressure to a second pressure, and the steps for switching from the first pressure to the second pressure are as follows: S311: Before the loading cavity switches from the first pressure to the second pressure, the fourth valve 12 is opened to pre-charge the auxiliary cavity 6 with gas until it reaches the second pressure. This step is a preparatory operation for switching from the first pressure (e.g., vacuum) to the second pressure (e.g., atmospheric pressure). Its core is to pre-charge the auxiliary cavity 6 to the target pressure, making it a "high-pressure gas reserve source." While the loading cavity 3 is still under the first pressure (vacuum) and the pressure switch has not yet begun, the control module will first instruct the fourth valve 12 on the auxiliary inlet pipe connected between the auxiliary cavity 6 and the external high-pressure gas source to open. By opening the fourth valve 12, external high-pressure gas (usually a clean, inert gas, such as nitrogen, with a pressure equal to or slightly higher than the target second pressure) will quickly flow into the auxiliary cavity 6 through the auxiliary inlet pipe, purifying its interior. This process will continue until the pressure sensor installed in the auxiliary cavity 6 detects that its internal pressure has reached the preset target value, i.e., the second pressure. After this step is completed, the fourth valve 12 is closed, and the auxiliary chamber 6 becomes an independent container isolated from the external gas path, filled and stabilized at the second pressure. This is a crucial preparation for subsequent connection with the loading chamber 3, which is in a vacuum state, to achieve instantaneous pressure balance.

[0040] S312: Control the closing of the fourth valve 12 and the opening of the third valve 11, allowing the gas in the auxiliary chamber 6 to enter the loading chamber 3 and balance the internal pressure of the loading chamber 3. This step is the core balancing operation in the process of switching from a first pressure (e.g., vacuum) to a second pressure (e.g., atmospheric pressure). Its core actions are "connection" and "isolation" to achieve rapid pressure neutralization. When the command to perform pressure switching is received, the control module will simultaneously perform two operations: First, open the third valve 11 on the first pipe 7 connecting the loading chamber 3 and the auxiliary chamber 6; at the same time, close the fourth valve 12 on the auxiliary intake pipe connecting the auxiliary chamber 6 and the external gas source. At the instant the third valve 11 is opened, the auxiliary chamber 6, which is at the second pressure (high pressure), and the loading chamber 3, which is at the first pressure (low pressure, e.g., vacuum), are directly connected through the first pipe 7. Due to the significant pressure difference, the gas pre-stored in the auxiliary chamber 6, which has reached the second pressure, will rush into the loading chamber 3 at high speed and actively through the first pipe 7. This process continues until the gas pressure between the interconnected loading chamber 3 and auxiliary chamber 6 reaches a dynamic equilibrium, meaning the pressure difference is essentially eliminated. Through this "release" or "sharing" of pre-stored high-pressure gas, the pressure inside loading chamber 3 is significantly increased in a very short time, greatly offsetting the pressure difference between its initial vacuum state and the target atmospheric pressure. This completes the most critical and time-consuming "pressure leveling" work during the pressure switching process, laying the foundation for rapid approach to the target value through subsequent precise gas replenishment via the main intake pipe 4.

[0041] S313: After the pressure between the auxiliary cavity 6 and the loading cavity 3 is balanced, the third valve 11 is closed and the first valve 9 is opened to continue filling the loading cavity 3 with gas to the second pressure. This step is the final fine-tuning operation of the process of switching from the first pressure (e.g., vacuum) to the second pressure (e.g., atmospheric pressure). Its core lies in "isolating the auxiliary cavity 6" and "starting the external main gas path" to achieve precise pressure control in the loading cavity 3. After the auxiliary cavity 6 and the loading cavity 3 are connected and the pressure is quickly balanced in step S312, the pressure in the loading cavity 3 and the auxiliary cavity 6 is basically the same, but usually still slightly lower than the final required precise second pressure. At this time, the control module will first close the third valve 11 on the first pipe 7 to isolate the auxiliary cavity 6, which has completed its main pressure neutralization function, from the system, restoring it to an independent cavity state. Next, the control module opens the first valve 9 on the main air intake pipe 4, directly supplying gas to the loading chamber 3 through an external high-pressure air source (usually the same air source used to fill the auxiliary chamber 6). This filling process continues until the pressure sensor installed in the loading chamber 3 monitors in real time that its internal pressure has reached and stabilized at a preset target value, i.e., a precise second pressure (such as one standard atmosphere). At this point, the loading chamber 3 has completed the complete switching process from the initial first pressure to the target second pressure, and wafer unloading or loading operations can begin.

[0042] In one embodiment, such as Figure 4 As shown, the pressure switching of the loading cavity includes switching from a second pressure to a first pressure, and the steps for switching from the second pressure to the first pressure are as follows: S321: Before the loading chamber switches from the second pressure to the first pressure, the fifth valve 13 is opened to pre-evacuate the auxiliary chamber 6, bringing the loading chamber to the first pressure. This step is a preparatory operation for the process of switching from the second pressure (e.g., atmospheric pressure) to the first pressure (e.g., vacuum). Its core is to pre-evacuate the auxiliary chamber 6 to the target low pressure, making it a "negative pressure buffer zone" or "vacuum reserve zone." While the loading chamber 3 is still at the second pressure (e.g., atmospheric pressure) and the pressure switch has not yet begun, the control module will first instruct the opening of the fifth valve 13 on the auxiliary exhaust pipe connected between the auxiliary chamber 6 and the external evacuation device (e.g., a vacuum pump). By opening the fifth valve 13, the external evacuation device will evacuate the auxiliary chamber 6 through the auxiliary exhaust pipe, expelling the gas. This process will continue until the pressure sensor installed in the auxiliary chamber 6 detects that its internal pressure has dropped to a preset target value, i.e., the first pressure (e.g., reaching the vacuum level required for the process). After this step is completed, the fifth valve 13 is closed, and the auxiliary cavity 6 becomes an independent "negative pressure" container isolated from the external air path and whose internal pressure is drawn up and stabilized at the first pressure. This is a crucial preparation for subsequent connection with the loading cavity 3, which is under atmospheric pressure, to achieve rapid depressurization.

[0043] S322: Control the closing of the fifth valve 13 and the opening of the third valve 11, allowing gas from the loading chamber 3 to enter the auxiliary chamber 6 to balance the pressure in the auxiliary chamber 6 and the loading chamber 3. This step is the core pressure relief operation in the process of switching from a second pressure (e.g., atmospheric pressure) to a first pressure (e.g., vacuum), and its core lies in "connecting the high and low pressure chambers" and "cutting off the external passage" to quickly reduce the pressure in the loading chamber 3. When the command to perform pressure switching is received, the control module simultaneously performs two operations: opening the third valve 11 on the first pipe 7 connecting the auxiliary chamber 6 and the loading chamber 3, and closing the fifth valve 13 on the auxiliary pipe connecting the auxiliary chamber 6 and the external evacuation device. At the moment the third valve 11 is opened, the auxiliary chamber 6, which has been pre-evacuated to a first pressure (low pressure, e.g., vacuum), is directly connected to the loading chamber 3, which is still at a second pressure (high pressure, e.g., atmospheric pressure). Due to the significant pressure difference, the high-pressure gas in the loading chamber 3 will quickly flow into the low-pressure auxiliary chamber 6 through the first pipe 7. This process continues until the pressure between the auxiliary chamber 6 and the loading chamber 3 reaches dynamic equilibrium. Through this "release" method, the pressure inside the loading chamber 3 is significantly reduced in a very short time, completing the most time-consuming initial pressure relief stage in the process of switching from high pressure to low pressure, laying the foundation for the subsequent final vacuuming through the main exhaust pipe to quickly approach the target value.

[0044] S323: After the pressure between the auxiliary cavity 6 and the loading cavity 3 is balanced, the third valve 11 is closed and the second valve 10 is opened to evacuate the loading cavity 3 to the first pressure. This step is the final fine-tuning and standardization operation of the process of "switching from the second pressure (e.g., atmospheric pressure) to the first pressure (e.g., vacuum)". Its core lies in "isolating the auxiliary cavity 6" and "starting the external main exhaust" to achieve the final standard pressure in the loading cavity 3. After the auxiliary cavity 6 and the loading cavity 3 are connected and the pressure is quickly balanced in step S322, the internal pressures of the two tend to be consistent, but are still slightly higher than the final required precise first pressure (vacuum). At this time, the control module first closes the third valve 11 on the first pipe 7 to isolate the auxiliary cavity 6, which has completed its main pressure relief and buffering function, from the system. Then, the control module opens the second valve 10 on the main exhaust pipe 5 to directly evacuate the loading cavity 3 through an external evacuation device (e.g., a vacuum pump) to continuously discharge the residual gas. This evacuation process will continue until the pressure sensor installed in the loading chamber 3 monitors in real time that the internal pressure reaches and stabilizes at the preset target value, i.e., the precise first pressure (such as the specific vacuum level required by the process). At this point, the loading chamber 3 has completed the complete switching process from the initial second pressure to the target first pressure, and can resume the ready state for transferring wafers between the main chamber 1 and the external environment.

[0045] In one embodiment, step S311, which involves pre-filling the auxiliary cavity 6 with gas to the second pressure, further includes activating a heating device to preheat the gas entering the auxiliary cavity 6. This embodiment, by simultaneously activating the heating device during the pre-filling process of the auxiliary cavity 6, preheats the incoming gas, ensuring that the gas in the auxiliary cavity 6 reaches both the target second pressure (e.g., atmospheric pressure) and the preset temperature. When this preheated gas, possessing the target pressure and temperature, rapidly enters the loading cavity 3 in subsequent steps (by opening the third valve 11) to achieve pressure balance, thermal shock between the gas and the wafer within the loading cavity 3 is minimized.

[0046] In one embodiment, the first pressure is less than the second pressure.

[0047] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor device platform, characterized in that, include: The main cavity contains a transport robot for transferring wafers under initial pressure. At least one process chamber is connected to the main chamber and is used to process the wafer. At least one loading chamber, connected to the main chamber, is used to switch between the first pressure and the second pressure to load and unload the wafer; The loading cavity is connected to an external air path via a main air inlet pipe and a main air outlet pipe. An auxiliary cavity is connected to the loading cavity via a first pipe. The auxiliary cavity is connected to the external air path via at least two second pipes. The auxiliary cavity is used to pre-inflate or de-inflate the loading cavity before pressure switching. During pressure switching, the auxiliary cavity, in conjunction with the main air inlet pipe and the main air outlet pipe, performs inflation or de-inflation to shorten the pressure switching time within the loading cavity. The pressure switching includes switching from the first pressure to the second pressure, or switching from the second pressure to the first pressure.

2. The semiconductor device platform according to claim 1, characterized in that, The auxiliary cavity is equipped with a heating device to preheat the gas inside the auxiliary cavity, thereby reducing the temperature difference between the gas entering the loading cavity from the auxiliary cavity and the wafer inside the loading cavity.

3. The semiconductor device platform according to claim 2, characterized in that, The heating device includes a first heating element, a second heating element, and a buffer elastic element; The first heating element is fixedly disposed in the auxiliary cavity. The first heating element is connected to the second heating element through the buffer elastic element so that the second heating element is movably disposed in the auxiliary cavity. The second heating element is disposed close to the opening of the first pipe that communicates with the auxiliary cavity. Both the first heating element and the second heating element have several vent holes, and the orthographic projections of the first heating element and the second heating element onto the plane where the opening of the first pipe is located both cover the opening of the first pipe.

4. The semiconductor device platform according to claim 1, characterized in that, The auxiliary cavity includes a plurality of first auxiliary cavities and / or a plurality of second auxiliary cavities; A plurality of the first auxiliary cavities are connected in series sequentially, and a plurality of the second auxiliary cavities are connected in parallel; Furthermore, the overall volume of the auxiliary cavity is less than or equal to the volume of the loading cavity.

5. The semiconductor device platform according to claim 1, characterized in that, It also includes a control module. A first valve is provided on the main air intake pipe, a second valve is provided on the main air outlet pipe, a third valve is provided on the first pipe, at least two second pipes include an auxiliary air intake pipe and an auxiliary air outlet pipe, a fourth valve is provided on the auxiliary air intake pipe, and a fifth valve is provided on the auxiliary air outlet pipe. The control module is connected to the first valve, the second valve, the third valve, the fourth valve, and the fifth valve respectively to realize independent control of each pipe.

6. The semiconductor device platform according to claim 5, characterized in that, Pressure sensors and temperature sensors are provided in the loading cavity and / or the auxiliary cavity to monitor the pressure and temperature in the loading cavity and / or the auxiliary cavity. Both the pressure sensors and the temperature sensors are connected to the control module. The control module controls the opening and closing of the first valve, the second valve, the third valve, the fourth valve and the fifth valve based on the information monitored by the pressure sensors and the temperature sensors.

7. A method for operating a semiconductor device platform, characterized in that, Applied to any one of the semiconductor device platforms as described in claims 1 to 6, the operating method includes the steps of: S1: Before the pressure switching operation of the loading cavity begins, the pressure in the auxiliary cavity is pre-adjusted to the target pressure, which is either a first pressure or a second pressure; S2: When a switching command is received, the auxiliary cavity is connected to the loading cavity so that the loading cavity can be inflated or deflated through the auxiliary cavity; S3: After the pressure between the auxiliary cavity and the loading cavity is balanced, disconnect the connection between the auxiliary cavity and the loading cavity, and perform final pressure adjustment on the loading cavity through the main air intake pipe and the main air outlet pipe to make the loading cavity reach the target pressure.

8. The method of operating the semiconductor device platform according to claim 7, characterized in that, The pressure switching of the loading cavity includes switching from a first pressure to a second pressure, and the steps for switching from the first pressure to the second pressure are as follows: S311: Before the loading cavity switches from the first pressure to the second pressure, control the opening of the fourth valve to pre-charge the auxiliary cavity with air so that the auxiliary cavity reaches the second pressure; S312: Control the closing of the fourth valve and the opening of the third valve to allow the gas in the auxiliary cavity to enter the loading cavity; S313: After the pressure between the auxiliary cavity and the loading cavity is balanced, the third valve is closed and the first valve is opened to continue filling the loading cavity with air to the second pressure.

9. The method of operating the semiconductor device platform according to claim 7, characterized in that, The pressure switching of the loading cavity includes switching from a second pressure to a first pressure, and the steps for switching from the second pressure to the first pressure are as follows: S321: Before the loading cavity switches from the second pressure to the first pressure, control the opening of the fifth valve to pre-evacuate the auxiliary cavity to bring the loading cavity to the first pressure; S322: Control the closing of the fifth valve and the opening of the third valve to allow the gas in the loading chamber to enter the auxiliary chamber; S323: After the pressure between the auxiliary cavity and the loading cavity is balanced, control the closing of the third valve and the opening of the second valve to evacuate the loading cavity to the first pressure.

10. The method of operating the semiconductor device platform according to claim 8, characterized in that, The step of pre-inflating the auxiliary cavity to the second pressure in step S311 further includes: The heating device is activated to preheat the gas entering the auxiliary cavity.

11. The method of operating the semiconductor device platform according to claim 8 or 9, characterized in that, The first pressure is less than the second pressure.

Images