A phase change integrated heat dissipation module for realizing different temperature uniformity of GaN, GaAs and Si-based chips in a TR assembly

Abstract

A phase-change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR (Transient Transformer) module is disclosed. This module comprises a phase-change end cap, a high thermal conductivity core material, high thermal conductivity clamps, a side cover, and a phase-change cavity. The module is divided into a cold end and a hot end, with the phase-change cavity running through both ends. A high thermal conductivity core material is positioned at the center of the phase-change cavity, which is filled with a phase-change material with high volume enthalpy change to act as a heat sink. A high thermal conductivity clamp is positioned in the middle of the high thermal conductivity core material, allowing the central temperature to spread outwards, and heat to be conducted along the thickness direction, resulting in synchronous temperature uniformity across the top and bottom surfaces. The TR module is integrally mounted on the heat dissipation module. The high thermal conductivity core material with its clamps helps to evenly distribute the temperature of the GaN, GaAs, and Si-based chips within the TR module. Simultaneously, the phase-change material directly beneath the Si-based chip rapidly absorbs heat, reducing its temperature, lowering power consumption, and effectively protecting chip lifespan.

Description

Technical Field

[0001] This invention belongs to the field of thermal management, specifically relating to a phase change integrated heat dissipation module that enables asynchronous temperature uniformity of GaN, GaAs and Si-based chips in a TR component. Background Technology

[0002] The heat dissipation of the high-power chip in the phased array antenna is achieved by attaching the hot end of a vapor chamber to TR components with different channel numbers, while the cold end of the vapor chamber is inserted into the groove of the phase change cold plate. Heat is transferred to the phase change material in the phase change cold plate, where it undergoes phase change and heat absorption. When the chip operates under high power conditions for extended periods, overheating is inevitable, which directly affects the chip's performance and lifespan.

[0003] Currently, there are two main types of chip temperature control: one is integrated temperature equalization, but the overall temperature of the component is relatively high, generally around 125℃. GaN chips can withstand temperatures of 230℃, GaAs chips 165℃, but Si-based chips only withstand 105℃. The overall temperature of the integrated temperature equalization exceeds the Si-based chip's withstand temperature, which reduces the lifespan of the Si-based chip, can damage it, and prevents other chips from operating efficiently. Another type involves connecting only a portion of the TR component to the heat sink module, specifically the end containing the GaN and GaAs chips, while the end containing the Si-based chip remains uncontacted. This results in uneven and slow temperature distribution within the heat sink module, poor temperature control in the uncontacted portion, and the lack of phase change material beneath the Si-based chip, preventing complete cooling and causing heat buildup, leading to overheating and chip damage. Therefore, effective thermal control of high-power chips on TR components has become a bottleneck restricting their development.

[0004] To address the aforementioned issues, this invention proposes a phase-change integrated heat dissipation module that enables asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component. This module allows heat to be conducted along the thickness direction and rapidly spread evenly to both sides, achieving rapid and uniform heat distribution while significantly reducing chip power consumption and extending its lifespan. Summary of the Invention

[0005] Objective of the Invention: To address the problems mentioned in the background art, this invention provides an integrated phase-change heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR (Transformer Module) component. This heat dissipation module utilizes a high-thermal-conductivity core material with a through-hole design in the phase-change cavity and high-thermal-conductivity clamps. This allows heat to be rapidly and evenly distributed from the center to both sides, and conducts heat along the thickness direction, achieving rapid and uniform heat distribution. This significantly reduces chip power consumption and extends its lifespan.

[0006] To solve the above problems, the technical solution of the present invention is: This solution indicates a phase change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component. The heat dissipation module consists of a phase change end cap, a high thermal conductivity core material, a high thermal conductivity clamp, a side cover, and a phase change cavity. A high thermal conductivity clamp is set in the middle of the high thermal conductivity core material. The phase change cavity runs through the hot and cold ends of the module. A high thermal conductivity core material runs through the center of the phase change cavity. The phase change cavity is filled with a phase change material with high volume enthalpy change to act as a heat sink.

[0007] Preferably, the heat dissipation module is made of metal, including aluminum alloy and its composite materials, copper alloy and its composite materials.

[0008] Preferably, the high thermal conductivity core material has the following characteristics: 1) High thermal conductivity core material is formed by hot pressing one or more carbon-based thermal conductive sheets to form a thermal conductive core layer of a certain thickness; 2) Carbon-based thermal conductive sheets include flexible pyrolytic graphite, graphene film, graphite film, and graphene sheet.

[0009] Preferably, the high thermal conductivity clamp is made of metal, including aluminum alloy and aluminum-based composite materials, copper alloy and copper-based composite materials.

[0010] Preferably, the high thermal conductivity clamp is located in the middle of the high thermal conductivity core material, and the high thermal conductivity clamp is provided with a circular through hole, and a hollow cylinder is provided through the cold end phase change cavity end face.

[0011] Preferably, the phase change material includes organic phase change materials (paraffin-based phase change materials, sugar alcohol-based phase change materials, ester-based phase change materials), inorganic phase change materials (crystalline hydrated salt-based phase change materials, molten salt-based phase change materials, metal or alloy-based phase change materials), and composite phase change materials.

[0012] Preferably, when filling the phase change material, an opening is made at either the cold end or the hot end, and the phase change material is filled into the phase change cavity through the opening. After the phase change material is filled, the opening is welded and sealed.

[0013] Preferably, the heat dissipation module is integrally connected with the TR component, and the phase change material is located directly below the Si-based chip in the TR component.

[0014] Beneficial effects 1) This invention discloses a phase change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component. The TR component is integrally attached to the heat dissipation module. By setting a high thermal conductivity core material with high thermal conductivity clamps installed in the phase change cavity, the overall temperature can be well uniformized, and heat can be conducted in the thickness direction. The top and bottom surfaces are uniformly heated, which greatly reduces the power consumption of GaN and GaAs chips. Furthermore, the phase change material is located directly below the Si-based chip, which can effectively absorb the heat of the Si-based chip while uniformizing the temperature, reducing the temperature of the Si-based chip, cooling it rapidly, and protecting the Si-based chip. This achieves asynchronous temperature uniformity for GaN, GaAs, and Si chips.

[0015] 2) The integrated structure with high thermal conductivity through phase change allows the integrated module to have a smaller size and weight, which is suitable for the needs of miniaturized and lightweight weapons.

[0016] 3) The high thermal conductivity core material of the belt is in direct contact with the phase change material, which can quickly transfer heat from the hot end to the cold end, thereby improving the reaction rate of the phase change material. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structural composition of a phase-change integrated heat dissipation module for heat dissipation of phased array antennas and for achieving asynchronous temperature uniformity of GaN, GaAs and Si-based chips according to the present invention. The attached diagrams are detailed as follows: 1-First phase change cover; 2-Second phase change cover; 3-High thermal conductivity core material; 4-High thermal conductivity clamp; 5-Bottom base blank; 6-Side cover; Figure 2 This is a schematic diagram of the high thermal conductivity core material and phase change material filling in the heat dissipation module of the present invention; The attached diagrams are detailed below: 7-Phase change material; 8-Phase change cavity; Figure 3 This is a schematic diagram of a phase-change integrated heat dissipation module for phased array antenna heat dissipation and asynchronous temperature uniformity of GaN, GaAs and Si-based chips according to the present invention. The attached diagram details are as follows: 9 - Hollow cylinder. Detailed Implementation

[0018] Referring to the accompanying drawings, the following detailed description is provided of an integrated phase-change heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component: (1) Using 6063 aluminum alloy, the base blank is machined by CNC. Its outer dimensions are 110mm×30mm×80mm, the outer dimensions of the side cover 6 are 80mm×20mm×60mm, the internal phase change cavity dimensions are machined to the required level, and the outer layer is reserved for machining allowance. At the same time, the phase change end cover is machined. The dimensions of the first phase change end cover are 90mm×15mm×10mm, and the dimensions of the second phase change end cover are 80mm×10mm×10mm.

[0019] (2) Graphene thermal conductive sheet is fabricated according to the cavity size, and the graphene thermal conductive sheet is modified in the thickness direction and the thermal interface is treated. The thickness of the graphene thermal conductive sheet is 1 mm. (3) Use aluminum alloy material to press the graphene thermal conductive sheet into shape, and then process it to produce a high thermal conductivity clamp. Lay the graphene thermal conductive sheet with the high thermal conductivity clamp flat into the phase change cavity that runs through the hot and cold ends, and fix it in the phase change cavity with the high thermal conductivity clamp. (4) Weigh and mix the paraffin material according to the ratio, heat it to (110±2)℃, and stir it magnetically for 30 minutes to make it uniformly mixed, thereby modifying the paraffin material to have high thermal conductivity. (5) Open the cold end and pour the molten paraffin material into the phase change cavity from the cold end opening. Reserve the enthalpy change volume in the cavity. After the paraffin material is filled, the opening is sealed by laser welding. (6) A hollow cylinder with a diameter of 2.5 mm is machined on the end face of the cold end phase change cavity, and finally CNC finishing is performed to remove the machining allowance.

Claims

1. A phase-change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component, the heat dissipation module comprising a phase-change end cap, a high thermal conductivity core material, a side cover, and a phase-change cavity, characterized in that, A high thermal conductivity clamp is provided in the middle of the high thermal conductivity core material. The high thermal conductivity core material is located in the center of the phase change cavity and runs through the hot and cold ends. The phase change cavity is filled with phase change material.

2. The heat dissipation module according to claim 1, characterized in that, The heat dissipation module is made of metal, including aluminum alloy and its composite materials, and copper alloy and its composite materials.

3. The heat dissipation module according to claim 1, wherein, The high thermal conductivity core material has the following characteristics: 1) High thermal conductivity core material is formed by hot pressing one or more carbon-based thermal conductive sheets to form a thermal conductive core layer of a certain thickness; 2) Carbon-based thermal conductive sheets include flexible pyrolytic graphite, graphene film, graphite film, and graphene sheet.

4. The heat dissipation module according to claim 1, characterized in that, The high thermal conductivity clamp is made of metal, including aluminum alloy and aluminum-based composite materials, copper alloy and copper-based composite materials.

5. The high thermal conductivity clamp according to claim 4, characterized in that, The high thermal conductivity clamp is provided with a circular through hole; a hollow cylinder is provided through the cold end phase change cavity end face.

6. The heat dissipation module according to claim 1, characterized in that, The phase change materials include organic phase change materials (paraffin-based phase change materials, sugar alcohol-based phase change materials, ester-based phase change materials), inorganic phase change materials (crystalline hydrated salt-based phase change materials, molten salt-based phase change materials, metal or alloy-based phase change materials), and composite phase change materials.

7. The phase change material according to claim 6, characterized in that, When filling the phase change material, an opening is made at either the cold end or the hot end. The phase change material is then filled into the phase change cavity through the opening. After the phase change material is filled, the opening is welded and sealed.

8. The heat dissipation module according to claim 1, characterized in that, The heat dissipation module is integrally connected with the TR component, and the phase change material is located directly below the Si-based chip in the TR component.

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