SoP Packaging Structure and Fabrication Method

Abstract

This invention provides a SoP packaging structure and its fabrication method. Based on the arrangement of TGV metal pillars, metal pillars, TSV composite adapter board and redistribution layer, a high-density integrated composite adapter board can be fabricated. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the dicing process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology and relates to a SoP packaging structure and its preparation method. Background Technology

[0002] Driven by the ever-increasing integration density of various electronic components (such as transistors, diodes, resistors, and capacitors), the semiconductor industry has experienced rapid growth. As the performance requirements of high-speed AI products become increasingly demanding, chip performance becomes increasingly crucial, and advanced 2.5D packaging will lead to larger and larger package sizes as chip performance improves.

[0003] The fabrication of existing 2.5D packaging structures typically involves first fabricating 2.5D package monomers, and then bonding them to a substrate via flip-chip (FC) for electrical connection. However, traditional 2.5D packaging faces process challenges when dealing with ultra-large package structures. For example, the current 2.5D package structure (2×SoC+4×HBM) has a substrate size of approximately 90×90mm. To meet the demands of high computing power, the package size will continue to increase, with future substrate sizes reaching 100-150mm. For a 300×300mm wafer, only two package structures can be accommodated on a single wafer, resulting in low economic efficiency.

[0004] Therefore, it is necessary to provide a SoP (System on Panel) packaging structure and its fabrication method. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a SoP packaging structure and its preparation method to solve the problem of low economic efficiency of the existing 2.5D packaging structure.

[0006] To achieve the above and other related objectives, the present invention provides a method for fabricating a SoP packaging structure, comprising the following steps:

[0007] A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other;

[0008] A TGV metal pillar is formed in the glass substrate, penetrating the glass substrate;

[0009] A first redistribution layer is formed on a first surface of the glass substrate, and a second redistribution layer is formed on a second surface of the glass substrate, wherein the first redistribution layer is electrically connected to a first end of the TGV metal pillar, and the second redistribution layer is electrically connected to a second end of the TGV metal pillar.

[0010] A metal pillar, a TSV composite adapter plate, and a plastic encapsulation passivation layer covering the metal pillar and the TSV composite adapter plate are formed on the first redistribution layer. The TSV composite adapter plate includes a TSV adapter plate and a third redistribution layer and a fourth redistribution layer located on opposite sides of the TSV adapter plate and electrically connected to the TSV adapter plate, respectively. The first end of the third redistribution layer and the metal pillar are both electrically connected to the first redistribution layer, and the second end of the fourth redistribution layer and the metal pillar are both exposed in the plastic encapsulation passivation layer.

[0011] A fifth redistribution layer is formed on the plastic encapsulation passivation layer, and the fifth redistribution layer is electrically connected to the fourth redistribution layer and the metal pillar.

[0012] A first chip and a second chip are provided, and the first chip and the second chip are bonded to the fifth redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the fifth redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board.

[0013] The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

[0014] Optionally, the step of forming the metal pillar, the TSV composite adapter board, and the plastic encapsulation passivation layer on the first redistribution layer includes:

[0015] Provide the TSV composite adapter board and bond the TSV composite adapter board to the first redistribution layer;

[0016] A plastic encapsulation passivation layer is formed on the first redistribution layer, covering the TSV composite adapter board and the first redistribution layer;

[0017] The molding passivation layer is patterned to form metal pillar vias, and the metal pillar vias expose the first redistribution layer;

[0018] Forming the metal pillar that fills the through-hole of the metal pillar;

[0019] Polishing is performed to expose the fourth redistribution layer and the metal pillars;

[0020] The steps of forming the metal pillars, the TSV composite adapter board, and the plastic encapsulation passivation layer on the first redistribution layer include:

[0021] The metal pillars are formed on the first redistribution layer;

[0022] Provide the TSV composite adapter board and bond the TSV composite adapter board to the first redistribution layer;

[0023] The plastic encapsulation passivation layer is formed to cover the TSV composite adapter plate and the metal pillar;

[0024] Polishing was performed to expose the fourth redistribution layer and the metal pillars.

[0025] Optionally, before performing the dicing process, the method further includes a step of forming a rigid reinforcement on the fifth redistribution layer, wherein the rigid reinforcement is located around the first chip and the second chip, and the rigid reinforcement includes a metal rigid reinforcement or a semiconductor rigid reinforcement; before performing the dicing process, the method further includes a step of forming a metal bump electrically connected to the second redistribution layer on the surface of the second redistribution layer.

[0026] Optionally, after bonding the first chip and the second chip, and before performing the dicing process, the following steps are further included:

[0027] A molding compound layer is formed on the surface of the fifth redistribution layer to encapsulate the first chip and the second chip;

[0028] An electronic component and a connector are formed on the surface of the second redistribution layer, and both the electronic component and the connector are electrically connected to the second redistribution layer.

[0029] Optionally, the method further includes the step of forming a rigid reinforcement on the surface of the molding layer, the rigid reinforcement including a metal rigid reinforcement and a semiconductor rigid reinforcement.

[0030] Optionally, the glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; and the shape of the SoP package unit structure includes a circle, an ellipse, or a polygon.

[0031] Optionally, the formation of the TGV metal pillar includes using a laser method to form a first through hole penetrating the glass substrate from top to bottom from a first surface of the glass substrate, and using a laser method to form a second through hole penetrating the glass substrate from bottom to bottom from a second surface of the glass substrate, wherein the second through hole and the first through hole are staggered.

[0032] The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0033] A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other;

[0034] A TGV metal pillar, wherein the TGV metal pillar penetrates the glass substrate;

[0035] A first redistribution layer is located on a first surface of the glass substrate and is electrically connected to a first end of the TGV metal pillar.

[0036] A second rewiring layer is electrically connected to the second end of the TGV metal pillar.

[0037] The TSV composite adapter board is located on the first redistribution layer. The TSV composite adapter board includes a TSV adapter board and a third redistribution layer and a fourth redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively. The third redistribution layer is electrically connected to the first redistribution layer.

[0038] A metal pillar, the metal pillar being located on the first redistribution layer, the first end of the metal pillar being electrically connected to the first redistribution layer;

[0039] A plastic encapsulation passivation layer is located on the first redistribution layer. The plastic encapsulation passivation layer covers the TSV composite adapter board and the metal pillar, and exposes the fourth redistribution layer and the second end of the metal pillar.

[0040] A fifth redistribution layer is located on the plastic encapsulation passivation layer, and the fifth redistribution layer is electrically connected to the fourth redistribution layer and the metal pillar.

[0041] The first chip and the second chip are both inverted and bonded to the fifth redistribution layer and electrically connected to the fifth redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are both electrically connected to the TSV composite adapter board.

[0042] Optionally, it may also include a rigid reinforcement located on the fifth redistribution layer and surrounding the first chip and the second chip, or a rigid reinforcement located on the surface of the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; and / or the surface of the second redistribution layer has one or a combination of metal bumps, electronic components or connectors electrically connected to the second redistribution layer.

[0043] Optionally, the size of the glass substrate includes 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical, or polygonal.

[0044] As described above, the SoP packaging structure and its fabrication method of the present invention, based on the arrangement of TGV metal pillars, metal pillars, TSV composite adapter board and redistribution layer, can fabricate a high-density integrated composite adapter board. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency. Attached Figure Description

[0045] Figure 1 The diagram shows a schematic of the fabrication process of the SoP packaging structure in an embodiment of the present invention.

[0046] Figure 2 The diagram shown is a top view of the glass substrate in an embodiment of the present invention.

[0047] Figure 3 This is a schematic diagram of a structure formed in a glass substrate after TGV metal pillars are formed in an embodiment of the present invention.

[0048] Figure 4 This is a schematic diagram of another structure after forming TGV metal pillars in a glass substrate according to an embodiment of the present invention.

[0049] Figure 5 The diagram shown is a schematic representation of the structure after the formation of the first redistribution layer and the second redistribution layer in an embodiment of the present invention.

[0050] Figure 6 The diagram shows the structure of the TSV composite adapter board after it is formed on the first redistribution layer in an embodiment of the present invention.

[0051] Figure 7 The diagram shown is a schematic representation of the structure after the formation of the first bottom filling layer in an embodiment of the present invention.

[0052] Figure 8 The diagram shows the structure after a plastic encapsulation passivation layer is formed on the first redistribution layer in an embodiment of the present invention.

[0053] Figure 9 The diagram shows a structural schematic after metal pillars are formed on the first redistribution layer in an embodiment of the present invention.

[0054] Figure 10 This is a schematic diagram of the structure after the fifth redistribution layer is formed on the plastic encapsulation passivation layer in an embodiment of the present invention.

[0055] Figure 11 The diagram shows the structure after bonding the first chip and the second chip in an embodiment of the present invention.

[0056] Figure 12The diagram shows the structure after the second bottom filling layer is formed in an embodiment of the present invention.

[0057] Figure 13 The diagram shown is a structural schematic of the metal bumps formed in an embodiment of the present invention.

[0058] Figure 14 The diagram shown is a top view of the SoP packaging structure formed before the cutting process in an embodiment of the present invention.

[0059] Figure 15 The diagram shown is a top view of the SoP (Sort of Package) unit structure formed after the cutting process in an embodiment of the present invention.

[0060] Figure 16 The diagram shows the morphological structure of the SoP packaging unit structure formed after the cutting process in an embodiment of the present invention.

[0061] Figure 17 The diagram shown is a structural schematic of the rigid reinforcement member formed in an embodiment of the present invention.

[0062] Figure 18 The diagram shown is a top view of the SoP packaging structure with rigid reinforcement formed in an embodiment of the present invention.

[0063] Figure 19 The diagram shown is a schematic diagram of another SoP packaging structure with rigid reinforcement, electronic components and connectors formed in an embodiment of the present invention.

[0064] Explanation of reference numerals in the attached figures

[0065] 100 glass substrate

[0066] 101 TGV Metal Column

[0067] 210 First Rerouting Layer

[0068] 220 Second Rerouting Layer

[0069] 230 Third Rerouting Layer

[0070] 240 Fourth Rerouting Layer

[0071] 250 Fifth Rerouting Layer

[0072] 300 TSV Composite Adapter Board

[0073] 301 silicon layer

[0074] 302 TSV metal pillar

[0075] 410 First bottom fill layer

[0076] 420 Second bottom fill layer

[0077] 500mm plastic encapsulation passivation layer

[0078] 501 Metal Column Through Hole

[0079] 600 metal column

[0080] 710 First Chip

[0081] 720 Second Chip

[0082] 810 Metal Bump

[0083] 820 Electronic Components

[0084] 830 connector

[0085] 910 First rigid reinforcement

[0086] 920 Second rigid reinforcement

[0087] 110 Molding layer Detailed Implementation

[0088] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0089] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0090] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include orientations of the device in use or operation other than those depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, when a layer is referred to as “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0091] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0092] like Figure 1 This embodiment provides a method for fabricating a SoP packaging structure. Based on the configuration of TGV metal pillars, metal pillars, TSV composite adapter board and redistribution layer, a high-density integrated composite adapter board can be fabricated. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency.

[0093] The following is in conjunction with the appendix Figures 2 to 19 The fabrication of the aforementioned SoP packaging structure is further described, specifically including:

[0094] First, refer to Figure 1 and Figure 2 Step S1 is executed, providing a glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other.

[0095] As an example, the size of the glass substrate 100 may include 100 to 600 mm.

[0096] Specifically, the size of the glass substrate 100 may include, for example, 100-600 mm, and the shape of the glass substrate 100 may include, for example, a square, a rectangle, a circle, etc. In this embodiment, refer to... Figure 2 and Figure 3 The glass substrate 100 is square and its size is 600×600mm. However, the size of the glass substrate 100 is not limited to this. For example, it may include 100×100mm, 200×200mm, 300×300mm, 500×500mm, etc. The shape of the glass substrate 100 is not limited to square. It may also be rectangular or circular, etc.

[0097] Next, refer to Figure 1 , Figure 3 and Figure 4 Step S2 is performed to form a TGV metal pillar 101 penetrating the glass substrate 100.

[0098] As an example, the formation of the TGV metal pillar 101 includes using a laser method to form a first through hole penetrating the glass substrate 100 from top to bottom from a first surface of the glass substrate 100, and using a laser method to form a second through hole penetrating the glass substrate 100 from bottom to bottom from a second surface of the glass substrate 100, wherein the second through hole and the first through hole are staggered.

[0099] For details, please refer to Figure 3 When preparing the TGV metal pillar 101, a first through hole (not shown) penetrating the glass substrate 100 from top to bottom can be formed by laser etching on the first surface of the glass substrate 100. Then, a second through hole (not shown) penetrating the glass substrate 100 from bottom to bottom can be formed on the second surface of the glass substrate 100 by laser etching. The second through hole and the first through hole are staggered. After forming the first through hole and the second through hole, the TGV metal pillar 101 can be formed in the first through hole and the second through hole by electroplating or other methods.

[0100] The double-sided laser etching method can achieve a high-density distribution of the TGV metal pillars 101 in the glass substrate 100. For example, the spacing between adjacent TGV metal pillars 101 can be in the range of 80-100 μm, such as 80 μm, 90 μm, 100 μm, etc. Since the first through hole and the second through hole are overlapped, an effective gap area can be formed between them, thereby increasing the distribution density of the TGV metal pillars 101.

[0101] To simplify the structure, this embodiment adopts... Figure 4 The illustrated structure shows the TGV metal pillars 101 fabricated by laser etching from one side of the glass substrate 100. However, it is understood that the distribution of the TGV metal pillars 101 in the glass substrate 100 can also be achieved using... Figure 3 The structure shown.

[0102] Furthermore, after forming the TGV metal pillars 101, the glass substrate 100 can be thinned by grinding to reduce the package size. The thinning operation can also reduce the over-layer phenomenon between adjacent TGV metal pillars 101, thereby improving product quality.

[0103] The size, morphology and distribution of the TGV metal column 101 are not subject to excessive restrictions here.

[0104] Next, refer to Figure 1 and Figure 5In step S3, a first redistribution layer 210 is formed on the first surface of the glass substrate 100, and a second redistribution layer 220 is formed on the second surface of the glass substrate 100. The first redistribution layer 210 is electrically connected to the first end of the TGV metal pillar 101, and the second redistribution layer 220 is electrically connected to the second end of the TGV metal pillar 101.

[0105] Specifically, the method for forming the first redistribution layer 210 on the first surface of the glass substrate 100 may include a semiconductor process method or a substrate bonding method. Similarly, the method for forming the second redistribution layer 220 on the second surface of the glass substrate 100 may include a semiconductor process method or a substrate bonding method.

[0106] The semiconductor manufacturing process is a method of preparing the first redistribution layer 210 and the second redistribution layer 220 on the glass substrate 100 through steps such as coating, exposure, development, deposition, and etching. The substrate bonding method is a method of preparing the required first redistribution layer 210 and second redistribution layer 220 in advance, and then directly bonding the first redistribution layer 210 and the second redistribution layer 220 to the glass substrate 100.

[0107] The specific fabrication methods for the first redistribution layer 210 and the second redistribution layer 220 are not excessively limited here; they can be fabricated using the same method, or different methods can be used. The specific materials and structures of the first redistribution layer 210 and the second redistribution layer 220 are also not excessively limited here and can be selected as needed.

[0108] Next, refer to Figure 1 and Figures 6-9 In step S4, a metal pillar 600, a TSV composite adapter plate 300, and a plastic encapsulation passivation layer 500 covering the metal pillar 600 and the TSV composite adapter plate 300 are formed on the first redistribution layer 210. The TSV composite adapter plate 300 includes a TSV adapter plate and a third redistribution layer 230 and a fourth redistribution layer 240 located on opposite sides of the TSV adapter plate and electrically connected to the TSV adapter plate, respectively. The first ends of the third redistribution layer 230 and the metal pillar 600 are electrically connected to the first redistribution layer 210, and the second ends of the fourth redistribution layer 240 and the metal pillar 600 are exposed in the plastic encapsulation passivation layer 500.

[0109] Specifically, the TSV adapter board includes a silicon layer 301 and a TSV metal pillar 302 penetrating the silicon layer 301. The third redistribution layer 230 and the fourth redistribution layer 240 are electrically connected to the first and second ends of the TSV metal pillar 302, respectively. The third redistribution layer 230 and the fourth redistribution layer 240 enable the TSV composite adapter board 300 to have a smaller line width / spacing to meet the requirements of subsequent high-density electrical connections. The line width of the TSV composite adapter board 300 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc., and the line spacing of the TSV composite adapter board 300 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc.

[0110] The specific materials, structures, and fabrication of the third redistribution layer 230 and the fourth redistribution layer 240 are not subject to excessive restrictions here, and can be selected as needed.

[0111] When the TSV composite adapter board 300 is bonded to the first redistribution layer 210, the third redistribution layer 230 is electrically connected to the first redistribution layer 210. The bonding method will not be described in detail here.

[0112] Furthermore, after bonding the TSV composite adapter board 300, it is preferable to fill the space between the TSV composite adapter board 300 and the first redistribution layer 210 with a first bottom filler layer 410, such as... Figure 7 This improves bonding strength and protects the bonding interface. The material of the first bottom filler layer 410 can be a material with good adhesion and insulation, such as epoxy resin, polyimide, or silicone.

[0113] The material of the encapsulation passivation layer 500 may include epoxy resin layer, polyimide layer, ABF film (Ajinomoto Build-up Film), etc. In this embodiment, ABF film with high durability, low coefficient of thermal expansion (CTE), excellent insulation performance and easy processability is used as the material of the encapsulation passivation layer 500. However, the material of the encapsulation passivation layer 500 is not limited to this, and may also be epoxy resin layer, etc.

[0114] The metal pillar 600 can be prepared by methods such as electroplating or bonding, and the material of the metal pillar 600 can include metals such as Cu.

[0115] As an example, the steps of forming the metal pillar 600, the TSV composite adapter board 300, and the plastic encapsulation passivation layer 500 on the first redistribution layer 210 may include:

[0116] See Figure 6 and Figure 7 The TSV composite adapter board 300 is provided, and the TSV composite adapter board 300 is bonded to the first redistribution layer 210.

[0117] See Figure 8 A plastic encapsulation passivation layer 500 is formed on the first redistribution layer 210, which covers the TSV composite adapter board 300 and the first redistribution layer 210.

[0118] See Figure 8 The plastic encapsulation passivation layer 500 is patterned to form a metal pillar 600 through hole 501, and the metal pillar 600 through hole 501 exposes the first redistribution layer 210.

[0119] See Figure 9 The metal pillar 600 is formed to fill the through hole 501 of the metal pillar 600;

[0120] See Figure 9 The process involves grinding to expose the fourth redistribution layer 240 and the metal pillars 600.

[0121] The method for patterning the plastic encapsulation passivation layer 500 can be such as laser drilling or dry etching, and the grinding process can be such as chemical mechanical polishing (CMP) or physical grinding.

[0122] In another embodiment, the step of forming the metal pillar 600, the TSV composite adapter board 300, and the plastic encapsulation passivation layer 500 on the first redistribution layer 210 may further include:

[0123] The metal pillars 600 are formed on the first redistribution layer 210;

[0124] The TSV composite adapter board 300 is provided and bonded to the first redistribution layer 210.

[0125] The plastic encapsulation passivation layer 500 is formed to cover the TSV composite adapter plate 300 and the metal pillar 600;

[0126] Polishing is performed to expose the fourth redistribution layer 240 and the metal pillars 600.

[0127] Next, refer to Figure 1 and Figure 10In step S5, a fifth redistribution layer 250 is formed on the plastic encapsulation passivation layer 500, and the fifth redistribution layer 250 is electrically connected to the fourth redistribution layer 240 and the metal pillar 600.

[0128] Specifically, the material, structure, and fabrication of the fifth redistribution layer 250 are not overly restricted here and can be selected as needed.

[0129] Next, refer to Figure 1 and Figure 11 In step S6, a first chip 710 and a second chip 720 are provided, and the first chip 710 and the second chip 720 are bonded to the fifth redistribution layer 250 by inverted bonding. The first chip 710 and the second chip 720 are both electrically connected to the fifth redistribution layer 250, and the first chip 710 and the second chip 720 are both located on the TSV composite adapter board 300 and are both electrically connected to the TSV composite adapter board 300.

[0130] Specifically, the first chip 710 and the second chip 720 can achieve high-speed signal connection through the TSV composite adapter board 300, such as... Figure 15 In the diagram, the area within the dashed box A represents the interconnection area between the first chip 710 and the second chip 720, specifically the area where the first chip 710 and the second chip 720 are electrically connected to the TSV composite adapter board 300 via the fifth redistribution layer 250.

[0131] As an example, the first chip 710 may include, for example, a system on chip technology (SoC), and the second chip 720 may include, for example, a high-bandwidth memory (HBM) chip.

[0132] Specifically, in this embodiment, the first chip 710 is a SoC chip and the second chip 720 is an HBM chip, but the types of the first chip 710 and the second chip 720 are not limited to these.

[0133] For further details, please refer to [link / reference]. Figure 12 After bonding the first chip 710 and the second chip 720, a second underfill layer 420 is preferably filled between the first chip 710, the second chip 720, and the fifth redistribution layer 250 to improve bonding strength and protect the bonding interface. The material of the second underfill layer 420 can be a material with good adhesion and insulation, such as epoxy resin, polyimide, or silicone.

[0134] Furthermore, it also includes the step of forming metal bumps 810 electrically connected to the second redistribution layer 220 on the surface of the second redistribution layer 220.

[0135] For details, please refer to Figure 13 To facilitate subsequent electrical connections, metal bumps 810 electrically connected to the second redistribution layer 220 can be formed on the surface of the second redistribution layer 220. The type and material of the metal bumps 810 are not excessively limited here.

[0136] See Figure 14 The diagram illustrates a top view of the prepared SoP packaging structure in this embodiment.

[0137] Next, refer to Figure 1 and Figure 15 Step S7 is executed to perform a cutting process to form a SoP package single-unit structure.

[0138] Specifically, the cutting process may include mechanical cutting, laser cutting, or a combination thereof. The specific method is not excessively limited here. Through the cutting process, the SoP packaging structure can be transformed into the required SoP packaging single-unit structure.

[0139] As an example, the SoP package monolithic structure may include a 1×SoC+4×HBM package monolithic structure, but is not limited to this; see reference [link to documentation]. Figure 15 In this embodiment, the SoP package single-unit structure includes six 1×SoC+4×HBM computing modules, which can achieve the packaging requirements of small size, high integration and high cost-effectiveness.

[0140] As an example, the shape of the SoP package unit structure may include, for example, a circle, an ellipse, or a polygon.

[0141] For details, please refer to Figure 15 In this embodiment, the shape of the SoP package unit structure is a 300×300mm square, but the shape of the SoP package unit structure is not limited to this, such as... Figure 16 It may also include other polygons such as circles, ellipses or triangles, without excessive restrictions here.

[0142] As an example, the method further includes the step of forming a rigid reinforcement on the fifth redistribution layer 250, the rigid reinforcement being located around the first chip 710 and the second chip 720, the rigid reinforcement including a metal rigid reinforcement and a semiconductor rigid reinforcement.

[0143] For details, please refer to Figure 17 and Figure 18This diagram illustrates the structure after a first rigid reinforcement 910 is formed in the open area surrounding the first chip 710 and the second chip 720. The first rigid reinforcement 910 increases the rigidity of the package structure, further reducing the probability of warpage. Regarding the material of the first rigid reinforcement 910, it can be made of metal or semiconductor materials, etc., without excessive limitation.

[0144] In another embodiment, see Figure 19 After bonding the first chip 710 and the second chip 720, and before performing the dicing process, the following steps may also be included:

[0145] A molding compound 110 is formed on the surface of the fifth redistribution layer 250 to cover the first chip 710 and the second chip 720;

[0146] An electronic component 820 and a connector 830 are formed on the surface of the second redistribution layer 220, and both the electronic component 820 and the connector 830 are electrically connected to the second redistribution layer 220.

[0147] The electronic component 820 may include resistors, capacitors, inductors, diodes, transistors, etc., to play roles such as current shunting, current limiting, voltage dividing, and biasing in the circuit; the connector 830 may include IC sockets, etc., to achieve electrical connection.

[0148] Furthermore, the step may include forming a rigid reinforcement on the surface of the molding layer 110, the rigid reinforcement including a metal rigid reinforcement and a semiconductor rigid reinforcement.

[0149] For details, please refer to Figure 19 When the second rigid reinforcement 920 comes into contact with the first chip 710 and the second chip 720, it can achieve both rigidity enhancement and heat dissipation. Regarding the material of the second rigid reinforcement 920, it can be made of metal or semiconductor materials, etc., without excessive limitation.

[0150] See Figures 2 to 19 The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0151] A glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other;

[0152] TGV metal pillar 101, the TGV metal pillar 101 penetrating the glass substrate 100;

[0153] A first redistribution layer 210 is located on a first surface of the glass substrate 100 and is electrically connected to a first end of the TGV metal pillar 101.

[0154] A second redistribution layer 220 is electrically connected to the second end of the TGV metal pillar 101.

[0155] TSV composite adapter board 300, the TSV composite adapter board 300 is located on the first redistribution layer 210, the TSV composite adapter board 300 includes a TSV adapter board and a third redistribution layer 230 and a fourth redistribution layer 240 located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and the third redistribution layer 230 is electrically connected to the first redistribution layer 210;

[0156] Metal pillar 600, the metal pillar 600 is located on the first redistribution layer 210, and the first end of the metal pillar 600 is electrically connected to the first redistribution layer 210;

[0157] A plastic encapsulation passivation layer 500 is located on the first redistribution layer 210. The plastic encapsulation passivation layer 500 covers the TSV composite adapter board 300 and the metal pillar 600, and exposes the fourth redistribution layer 240 and the second end of the metal pillar 600.

[0158] The fifth redistribution layer 250 is located on the plastic encapsulation passivation layer 500, and the fifth redistribution layer 250 is electrically connected to the fourth redistribution layer 240 and the metal pillar 600.

[0159] The first chip 710 and the second chip 720 are both inverted and bonded to the fifth redistribution layer 250 and electrically connected to the fifth redistribution layer 250. The first chip 710 and the second chip 720 are both located above the TSV composite adapter board 300 and are both electrically connected to the TSV composite adapter board 300.

[0160] As an example, it also includes a rigid reinforcement located on the fifth redistribution layer 250 and surrounding the first chip 710 and the second chip 720, or a rigid reinforcement located on the surface of the first chip 710 and the second chip 720, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; and / or the surface of the second redistribution layer 220 has one or a combination of a metal bump 810, an electronic component 820 or a connector 830 electrically connected to the second redistribution layer 220.

[0161] As an example, the glass substrate 100 has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; and the shape of the SoP packaging structure includes a circle, an ellipse, or a polygon.

[0162] In this embodiment, the SoP packaging structure can be prepared using the above-described preparation method, but it is not limited to this method. Other preparation processes can also be used, and no excessive restrictions are imposed here. In this embodiment, the SoP packaging structure is prepared directly using the above-described preparation process. Therefore, the specific structure, materials, etc. of the SoP packaging structure can be referred to the description in the above preparation method, and will not be repeated here. In summary, the SoP packaging structure and its preparation method of the present invention, based on the setting of TGV metal pillars, metal pillars, TSV composite adapter board and redistribution layer, can prepare a high-density integrated composite adapter board. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency.

[0163] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for fabricating a SoP (Sort of Package) packaging structure, characterized in that, Includes the following steps: A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other; A TGV metal pillar is formed in the glass substrate, penetrating the glass substrate; A first redistribution layer is formed on a first surface of the glass substrate, and a second redistribution layer is formed on a second surface of the glass substrate, wherein the first redistribution layer is electrically connected to a first end of the TGV metal pillar, and the second redistribution layer is electrically connected to a second end of the TGV metal pillar. A metal pillar, a TSV composite adapter plate, and a plastic encapsulation passivation layer covering the metal pillar and the TSV composite adapter plate are formed on the first redistribution layer. The TSV composite adapter plate includes a TSV adapter plate and a third redistribution layer and a fourth redistribution layer located on opposite sides of the TSV adapter plate and electrically connected to the TSV adapter plate, respectively. The first end of the third redistribution layer and the metal pillar are both electrically connected to the first redistribution layer, and the second end of the fourth redistribution layer and the metal pillar are both exposed in the plastic encapsulation passivation layer. A fifth redistribution layer is formed on the plastic encapsulation passivation layer, and the fifth redistribution layer is electrically connected to the fourth redistribution layer and the metal pillar. A first chip and a second chip are provided, and the first chip and the second chip are bonded to the fifth redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the fifth redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board. The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

2. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The steps of forming the metal pillar, the TSV composite adapter board, and the plastic encapsulation passivation layer on the first redistribution layer include: Provide the TSV composite adapter board and bond the TSV composite adapter board to the first redistribution layer; A plastic encapsulation passivation layer is formed on the first redistribution layer, covering the TSV composite adapter board and the first redistribution layer; The molding passivation layer is patterned to form metal pillar vias, and the metal pillar vias expose the first redistribution layer; Forming the metal pillar that fills the through-hole of the metal pillar; Polishing is performed to expose the fourth redistribution layer and the metal pillars; The steps of forming the metal pillars, the TSV composite adapter board, and the plastic encapsulation passivation layer on the first redistribution layer include: The metal pillars are formed on the first redistribution layer; Provide the TSV composite adapter board and bond the TSV composite adapter board to the first redistribution layer; The plastic encapsulation passivation layer is formed to cover the TSV composite adapter plate and the metal pillar; Polishing was performed to expose the fourth redistribution layer and the metal pillars.

3. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: Before the dicing process, the method further includes a step of forming a rigid reinforcement on the fifth redistribution layer, the rigid reinforcement being located around the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; before the dicing process, the method further includes a step of forming a metal bump electrically connected to the second redistribution layer on the surface of the second redistribution layer.

4. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: After bonding the first chip and the second chip, and before performing the dicing process, the following steps are also included: A molding compound layer is formed on the surface of the fifth redistribution layer to encapsulate the first chip and the second chip; An electronic component and a connector are formed on the surface of the second redistribution layer, and both the electronic component and the connector are electrically connected to the second redistribution layer.

5. The method for fabricating the SoP packaging structure according to claim 4, characterized in that: It also includes the step of forming a rigid reinforcement on the surface of the molding layer, the rigid reinforcement including a metal rigid reinforcement and a semiconductor rigid reinforcement.

6. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; the shape of the SoP package unit structure includes circular, elliptical or polygonal.

7. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The formation of the TGV metal pillar includes using a laser method to form a first through hole penetrating the glass substrate from top to bottom from a first surface of the glass substrate, and using a laser method to form a second through hole penetrating the glass substrate from bottom to bottom from a second surface of the glass substrate, wherein the second through hole and the first through hole are staggered.

8. A SoP packaging structure, characterized in that, The SoP encapsulation structure includes: A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other; A TGV metal pillar, wherein the TGV metal pillar penetrates the glass substrate; A first redistribution layer is located on a first surface of the glass substrate and is electrically connected to a first end of the TGV metal pillar. A second rewiring layer is electrically connected to the second end of the TGV metal pillar. The TSV composite adapter board is located on the first redistribution layer. The TSV composite adapter board includes a TSV adapter board and a third redistribution layer and a fourth redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively. The third redistribution layer is electrically connected to the first redistribution layer. A metal pillar, the metal pillar being located on the first redistribution layer, the first end of the metal pillar being electrically connected to the first redistribution layer; A plastic encapsulation passivation layer is located on the first redistribution layer. The plastic encapsulation passivation layer covers the TSV composite adapter board and the metal pillar, and exposes the fourth redistribution layer and the second end of the metal pillar. A fifth redistribution layer is located on the plastic encapsulation passivation layer, and the fifth redistribution layer is electrically connected to the fourth redistribution layer and the metal pillar. The first chip and the second chip are both inverted and bonded to the fifth redistribution layer and electrically connected to the fifth redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are both electrically connected to the TSV composite adapter board.

9. The SoP packaging structure according to claim 8, characterized in that: It also includes a rigid reinforcement located on the fifth redistribution layer and surrounding the first chip and the second chip, or a rigid reinforcement located on the surface of the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; and / or The surface of the second redistribution layer has one or a combination of metal bumps, electronic components, or connectors that are electrically connected to the second redistribution layer.

10. The SoP packaging structure according to claim 8, characterized in that: The glass substrate has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical or polygonal.

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