A method for preparing a sulfur-selenium antimony thin film based on liquid-gas cooperative post-processing and application thereof in solar cells

The crystallization kinetics of antimony sulfide selenide thin films were optimized by using a liquid-gas synergistic post-processing method, which solved the defects and inhomogeneities in the hydrothermal preparation method and improved the performance of solar cells.

CN122144664APending Publication Date: 2026-06-05GUANGXI UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGXI UNIV
Filing Date
2026-01-26
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

The antimony sulfide selenide films prepared by the existing hydrothermal method have a large number of defects and poor crystal quality, which makes it difficult to improve the photoelectric conversion efficiency. In addition, the uneven distribution of elements in the vertical direction of the film affects the bandgap matching of the back interface.

Method used

A liquid-gas synergistic post-treatment method is adopted, in which a treatment liquid containing a specific solute is spin-coated onto the surface of the antimony sulfide selenide film and heated to melt it in the liquid state and generate a gaseous substance. The liquid-gas synergistic effect optimizes the crystallization kinetics of the film, promotes grain growth and surface smoothing.

Benefits of technology

It significantly improves the crystal quality and back interface quality of the thin film, optimizes band matching, and enhances carrier transport capacity, thereby improving the photoelectric conversion efficiency of solar cells.

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Abstract

This invention belongs to the field of solar cell technology and relates to a method for preparing antimony sulfide selenide thin films based on liquid-gas synergistic post-treatment and its application in solar cells. The method utilizes gaseous substances generated by the melting and in-situ pyrolysis of a modifier to act on the antimony sulfide selenide thin film. Specifically, it includes the following steps: spin-coating a modifier post-treatment liquid onto the surface of the antimony sulfide selenide thin film, followed by heat treatment. During heating, as the temperature rises, the components of the treatment liquid first melt into a liquid state, promoting atomic mass transfer within the film and inducing grain growth; as the temperature further increases, the treatment liquid undergoes pyrolysis, generating gaseous substances until complete evaporation. These gaseous decomposition products can regulate the local vapor pressure of selenium and sulfur, inhibiting the escape of selenium and sulfur elements, exerting post-sulfidation and post-selenization effects, thereby optimizing the crystallization kinetics of the thin film. This method can reform grain growth, make the surface smoother and flatter, regulate the thin film composition to approach stoichiometry, passivate deep defects, improve the back interface quality of the device, alleviate the gradient distribution of the valence band position in the thin film, optimize band matching, and enhance carrier transport dynamics. This liquid-gas synergistic effect significantly improves the overall quality of the film, ultimately enhancing its photoelectric properties. This invention is the first to employ a liquid-gas synergistic approach to treat the surface of antimony sulfoselenide films, providing a new avenue for subsequent optimization of these films.
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