Graph correction method, storage medium, and terminal

Abstract

A pattern correction method, a storage medium and a terminal, the pattern correction method comprising: providing an initial to-be-corrected layout, including: an initial first layer layout, an initial second layer layout and an initial connection layout, a projection of a first initial pattern and a second initial pattern on the initial to-be-corrected layout has a first overlapping area, and a projection of the initial connection pattern on the initial to-be-corrected layout is located in the first overlapping area; using a grid tag algorithm to establish a position association relationship between the initial connection pattern and the first overlapping area on the first initial pattern and the second initial pattern; moving the first initial pattern multiple times to obtain the first layer layout; moving the second initial pattern multiple times to obtain the second layer layout, the projection of the first pattern and the second pattern on the initial to-be-corrected layout has a second overlapping area; and moving the initial connection pattern to the second overlapping area based on the position association relationship to obtain the connection layout. The pattern correction method can maximize the single-exposure process window of the high-layer metal of the advanced process node.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a pattern correction method, a storage medium, and a terminal. Background Technology

[0002] As integrated circuit manufacturing technology continues to advance towards advanced nodes, the critical dimension (CD) of semiconductor devices is also shrinking. The critical dimension of the pattern is becoming far beyond the limit that can be handled by a single exposure, so it is necessary to introduce multi-patterning technology. However, this will lead to an increase in cost. Therefore, it is imperative to explore and expand the process limits of single-patterning.

[0003] For single-patterning technology, the critical dimensions of the designed patterns are getting closer and closer to the theoretical limit of the resolution of ArF immersion lithography machines. For example, a 193nm immersion lithography machine with a resolution of 1.35NA can provide a half-pitch resolution of 36-40nm. The pattern design of advanced nodes inevitably has many weak points that test the process capabilities, especially in the higher via and metal layers that realize the connectivity function in the back-to-office process (BEOL). As the technology node advances, the process window of the via and metal layers will continue to shrink, the probability of defects will increase, the yield will decrease, and it will gradually become difficult to meet the requirements of mass production. Figure 1 This is a schematic diagram of the high-level via and metal connectivity in the back-end process of advanced nodes. The critical dimensions of the pattern design are close to the resolution limit of a single exposure. It has a very high pattern density, a very complex surrounding environment, and random design, which poses increasing challenges to the optical proximity correction (OPC) of the mask and the manufacturing process.

[0004] Therefore, it is necessary to improve the single-mask exposure process window within the resolution capability of ArF immersion lithography machines. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a pattern correction method, storage medium, and terminal to improve the single-mask exposure process window within the resolution capability of an ArF immersion lithography machine.

[0006] To address the aforementioned technical problems, the present invention provides a graphic correction method, comprising: providing an initial layout to be corrected, the initial layout to be corrected including: an initial first-layer layout, an initial second-layer layout, and an initial connecting layout disposed between the initial first-layer layout and the initial second-layer layout, the initial first-layer layout including a plurality of first initial graphics, the initial second-layer layout including a plurality of second initial graphics, the initial connecting layout including a plurality of initial connecting graphics, the initial connecting graphics being used to connect the first initial graphics and the second initial graphics, the projections of the first initial graphics and the second initial graphics onto the initial layout to be corrected having a first overlapping area, and the projection of the initial connecting graphics onto the initial layout to be corrected being located at the first initial layer layout. Within an overlapping region; using a grid labeling algorithm, establish a positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics; move the first initial graphic multiple times to obtain a first layer layout, the first layer layout including several first graphics; move the second initial graphic multiple times to obtain a second layer layout, the second layer layout including several second graphics, the projections of the first and second graphics onto the initial layout to be corrected have a second overlapping region; based on the positional association, move the initial connected graphic to the second overlapping region to obtain a connected layout, the connected layout including several connected graphics, the connected graphics being used to connect the first and second graphics.

[0007] Optionally, a grid labeling algorithm is used to establish a positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics, including: performing gridding processing on the initial layout to be corrected based on several first and second initial graphics, wherein the center point of the initial connected graphic coincides with the intersection grid point of the centerline of the first and second initial graphics; labeling the position of the initial connected graphic according to the coordinates of several intersection grid points to obtain an initial first label; labeling the first overlapping region of the projections of the first and second initial graphics based on the initial connected graphic to obtain an initial second label, and obtaining a positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics, wherein the positional association includes a one-to-one correspondence between the initial first label and the initial second label.

[0008] Optionally, based on the positional association, moving the initial connecting graphic to the second overlapping area to obtain a connecting layout includes: labeling the second overlapping area of ​​the projections of the first graphic and the second graphic to obtain a second label; and moving the initial connecting graphic to the second overlapping area according to the second label and the positional association to obtain a connecting layout, wherein the connecting layout includes a plurality of connecting graphics.

[0009] Optionally, moving the initial connecting graphic to the second overlapping area to obtain a connecting graphic includes: generating a connecting graphic within the area of ​​the second label, wherein the size of the connecting graphic is the same as the size of the initial connecting graphic, and the center point of the connecting graphic coincides with the intersection grid point of the center line of the first graphic and the center line of the second graphic.

[0010] Optionally, it also includes: after each movement of the first initial graphic, using a grid labeling algorithm to label the overlapping area of ​​the projections of the first initial graphic and the second initial graphic to obtain a transitional second label.

[0011] Optionally, it also includes: after each movement of the second initial graphic, using a grid labeling algorithm to label the overlapping area of ​​the projections of the first initial graphic and the second initial graphic to obtain a transitional second label.

[0012] Optionally, the extension directions of a plurality of the first initial patterns are parallel to the first direction, and the extension directions of a plurality of the second initial patterns are parallel to the second direction. The first direction and the second direction are parallel to the surface of the initial pattern to be corrected, and the first direction and the second direction are perpendicular to each other.

[0013] Optionally, moving the first initial graphic multiple times to obtain a first layer layout includes: dividing the outline of the first initial graphic into several first line segments; moving the several first line segments individually according to the surrounding environment of the several first line segments to complete one movement of the first initial graphic; repeating the above process until the first initial graphic moves to the target position to obtain a first layer layout, wherein the first layer layout includes several first graphics.

[0014] Optionally, the surrounding environment of the first line segment includes: the density of the graphics around each first line segment, and the maximum distance that each first line segment can move in the arrangement direction of the plurality of first initial graphics; according to the surrounding environment of the plurality of first line segments, moving the plurality of line segments individually includes: obtaining the surrounding environment of each first line segment; according to the surrounding environment of the first line segment, moving the first line segment in the arrangement direction of the plurality of first initial graphics towards an area with low graphic density by a preset first distance.

[0015] Optionally, the preset first distance is less than or equal to the size of the initial connection pattern in the arrangement direction of the plurality of first initial patterns.

[0016] Optionally, the second initial graphic is moved multiple times to obtain a second layer layout, including: dividing the outline of the second initial graphic into several second line segments; moving the several second line segments individually according to the surrounding environment of the several second line segments to complete one movement of the second initial graphic; repeating the above process until the second initial graphic moves to the target position to obtain a second layer layout, the second layer layout including several second graphics.

[0017] Optionally, the surrounding environment of the second line segment includes: the density of the graphics around each second line segment, and the maximum distance that each second line segment can move in the arrangement direction of the plurality of second initial graphics; moving the plurality of line segments individually according to the surrounding environment of the plurality of second line segments includes: obtaining the surrounding environment of each second line segment; moving the second line segment to an area with low graphic density in the arrangement direction of the plurality of second initial graphics by a preset second distance according to the surrounding environment of the second line segment.

[0018] Optionally, the preset second distance is less than or equal to the size of the initial connection pattern in the arrangement direction of the plurality of second initial patterns.

[0019] Optionally, the initial first layer layout, the initial connection layout, and the initial second layer layout are stacked in the vertical space direction.

[0020] Optionally, it also includes: optical proximity correction of the layout to be corrected, wherein the layout to be corrected includes: a first layer layout, a second layer layout, and a connecting layout disposed between the initial first layer layout and the initial second layer layout.

[0021] Accordingly, the present invention also provides a storage medium storing computer instructions thereon, wherein the computer instructions execute the steps of the method when they are run.

[0022] Accordingly, the present invention also provides a storage terminal, including a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and the processor executes the steps of the method when executing the computer instructions.

[0023] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0024] The pattern correction method of this invention establishes a positional association between the initial connected pattern and the first overlapping region on the first and second initial patterns using a grid labeling algorithm. Based on this positional association, the method first moves the first initial pattern multiple times to obtain the final first-layer layout, then moves the second initial pattern multiple times to obtain the final second-layer layout, and finally jumps to move the initial connected pattern to the second overlapping region to obtain the connected layout. The movement of the first and second initial patterns does not require reference to the position of the initial connected pattern. Moving the first and second initial patterns first, and then jumping to move the initial connected pattern simplifies the process, reduces runtime, and solves the limitation on the degree of freedom of selective movement of the first and second initial patterns caused by referencing the position of the initial connected pattern. This reduces the steps that are unfriendly to optical proximity effect correction caused by selective movement of the first and second initial patterns, and maximizes the single-exposure process window for high-layer metals at advanced process nodes.

[0025] Furthermore, the single movement distance of the first initial graphic is less than or equal to the size of the initial connected graphic in the second direction, and the single movement distance of the second initial graphic is less than or equal to the size of the initial connected graphic in the first direction. This ensures that after each selective movement operation of the first and second initial graphics, the overlapping area of ​​the upper and lower graphics is in contact with the initial connected graphic before the movement, thereby ensuring that the initial connected graphic information is not lost due to the selective movement of the first and second initial graphics. Attached Figure Description

[0026] Figures 1 to 3 This is a schematic diagram of the graphic correction process in one embodiment;

[0027] Figures 4 to 8 This is a flowchart illustrating the graphic correction method in an embodiment of the present invention;

[0028] Figures 9 to 16 This is a schematic diagram of the graphic correction process in an embodiment of the present invention. Detailed Implementation

[0029] As described in the background section, there is a need to improve the single-mask exposure process window within the resolution capability of ArF immersion lithography machines. This will now be analyzed and explained with reference to specific embodiments.

[0030] Figures 1 to 3 This is a schematic diagram of the graphic correction process in one embodiment.

[0031] Please refer to Figure 1 , Figure 1The initial layout to be corrected includes: an initial first-layer layout, an initial second-layer layout, and an initial connection layout disposed between the initial first-layer layout and the initial second-layer layout. The initial first-layer layout includes a plurality of first initial graphics 101. Figure 1 The initial second-layer layout includes several second initial graphics 102 (in yellow). Figure 1 The initial connection layout includes several initial connection graphics 103 (blue graphic in the middle). Figure 1 (Middle purple graphic), the initial connecting graphic 103 is used to connect the first initial graphic 101 and the second initial graphic 102, the extension direction of a plurality of the first initial graphics 101 is parallel to the first direction X, the extension direction of a plurality of the second initial graphics 102 is parallel to the second direction Y, the first direction X and the second direction Y are parallel to the surface of the initial layout to be corrected, and the first direction X and the second direction Y are perpendicular to each other, the projections of the first initial graphics 101 and the second initial graphics 102 on the initial layout to be corrected have a first overlapping area, and the projection of the initial connecting graphic 103 on the initial layout to be corrected is located within the first overlapping area.

[0032] In this embodiment, the initial first layer layout and the initial second layer layout are used to form different metal layers in the future, and the initial connection layout is used to form a connection layer connecting the two metal layers in the future.

[0033] Please refer to Figure 2 and Figure 3 , Figure 3 for Figure 3 An enlarged schematic diagram of region A shows that, in order to release the process window for the initial first-layer layout, the initial second-layer layout, and the initial connecting layout line spacing, and to meet the single-mask exposure process requirements within the resolution capability of the ArF immersion lithography machine, the initial first-layer layout, the initial second-layer layout, and the initial connecting layout are iteratively moved multiple times to form a layout to be corrected. The layout to be corrected includes the first-layer layout, the second-layer layout, and the connecting layout disposed between the first-layer layout and the second-layer layout. The first-layer layout includes several first patterns 104 (…). Figure 2 The second layer map includes several second graphics 105 (in yellow). Figure 2 The blue graphic in the middle), the connection layout includes several connection graphics 106 ( Figure 2 (Middle purple graphic), the connecting graphic 106 is used to connect the first graphic 104 and the second graphic 105, the projections of the first graphic 104 and the second graphic 105 on the layout to be corrected have a second overlapping area, and the projection of the connecting graphic 106 on the layout to be corrected is located within the second overlapping area.

[0034] The process of iteratively moving the initial first-layer layout, the initial second-layer layout, and the initial connection layout in multiple rounds includes: the first initial graphic 101 and the second initial graphic 102 first perform selective size adjustment (SSA) based on the initial connection graphic 103 to make room for the movement of the initial connection graphic 103. Based on the results of the selective size adjustment of the upper and lower layers of the first initial graphic 101 and the second initial graphic 102, the initial connection graphic 103 moves again through a complex judgment process. Subsequently, the first initial graphic 101 and the second initial graphic 102 perform a new round of selective size adjustment based on the new initial connection graphic 103. After multiple rounds of iterative movement, the process window for releasing the line spacing of the initial first-layer layout, the initial second-layer layout, and the initial connection layout is realized.

[0035] However, due to the continuous advancement of process nodes, the explosive growth in the pattern density of the initial first-layer and initial second-layer layouts, and the continuous shrinking of the critical dimension (CD), it was found during the iteration process that the process of moving the initial connected pattern 103 not only became increasingly complex and time-consuming, but also generated more and more jogs that were extremely unfriendly to the optical proximity correction (OPC) process. Figure 3 As shown in region B), its stringent movement judgment conditions and movement values, as well as the non-intelligent mechanical movement mechanism to the second overlapping area of ​​the projection of the first graphic 104 and the second graphic 105 on the layout to be corrected, have become a major obstacle to the subsequent release of the process window for the initial first layer layout, the initial second layer layout, and the initial connection layout line spacing.

[0036] To address the aforementioned issues, this invention provides a pattern correction method, storage medium, and terminal. By employing a grid labeling algorithm, a positional association is established between the initial connected pattern and a first overlapping region on the first and second initial patterns. Based on this positional association, the first initial pattern is moved multiple times to obtain the final first-layer layout, the second initial pattern is moved multiple times to obtain the final second-layer layout, and then the initial connected pattern is moved in a single step to the second overlapping region to obtain the connected layout. The movement of the first and second initial patterns does not require reference to the position of the initial connected pattern. The process of moving the initial connected pattern is simplified, reducing runtime. Furthermore, it resolves the limitation on the degree of freedom for selective movement of the first and second initial patterns caused by referencing the position of the initial connected pattern. This reduces the steps that are unfriendly to optical proximity correction caused by selective movement of the first and second initial patterns, while maximizing the single-exposure process window for high-layer metals at advanced process nodes.

[0037] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] Figures 4 to 8 This is a flowchart illustrating the graphic correction method in an embodiment of the present invention.

[0039] Please refer to Figure 4 The graphic correction method includes:

[0040] Step S10: Provide an initial layout to be corrected, the initial layout to be corrected including: an initial first layer layout, an initial second layer layout, and an initial connection layout disposed between the initial first layer layout and the initial second layer layout. The initial first layer layout includes a plurality of first initial graphics, the initial second layer layout includes a plurality of second initial graphics, and the initial connection layout includes a plurality of initial connection graphics. The initial connection graphics are used to connect the first initial graphics and the second initial graphics. The projections of the first initial graphics and the second initial graphics on the initial layout to be corrected have a first overlapping area, and the projection of the initial connection graphics on the initial layout to be corrected is located within the first overlapping area.

[0041] Step S20: Using a grid labeling algorithm, establish the positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics;

[0042] Step S30: Move the first initial graphic multiple times to obtain a first layer layout, the first layer layout including a plurality of first graphics;

[0043] Step S40: Move the second initial graphic multiple times to obtain a second layer layout. The second layer layout includes several second graphics. The projections of the first graphic and the second graphic onto the initial layout to be corrected have a second overlapping area.

[0044] Step S50: Based on the positional relationship, move the initial connection graphic to the second overlapping area to obtain a connection layout. The connection layout includes several connection graphics, which are used to connect the first graphic and the second graphic.

[0045] The described pattern correction method, by employing a grid labeling algorithm, establishes a positional association between the initial connected pattern and the first overlapping region on the first and second initial patterns. Based on this positional association, it can first move the first initial pattern multiple times to obtain the final first-layer layout, then move the second initial pattern multiple times to obtain the final second-layer layout, and finally jump to move the initial connected pattern to the second overlapping region to obtain the connected layout. The movement of the first and second initial patterns does not require reference to the position of the initial connected pattern. Moving the first and second initial patterns first, and then jumping to move the initial connected pattern, simplifies the process, reduces runtime, and solves the limitation on the degree of freedom of selective movement of the first and second initial patterns caused by referencing the position of the initial connected pattern. This reduces the steps that are unfriendly to optical proximity effect correction caused by selective movement of the first and second initial patterns, while maximizing the single-exposure process window for high-layer metals at advanced process nodes.

[0046] Next, combined Figures 9 to 16 Each step is analyzed and explained. Figures 9 to 16 This is a schematic diagram of the graphic correction process in an embodiment of the present invention.

[0047] Please combine Figure 9 Continue to refer to Figure 4 Step S10: Provide an initial layout to be corrected, the initial layout to be corrected including: an initial first-layer layout, an initial second-layer layout, and an initial connection layout disposed between the initial first-layer layout and the initial second-layer layout, the initial first-layer layout including a plurality of first initial graphics 201 ( Figure 9 The initial second-layer layout (in yellow) includes several second initial graphics 202. Figure 9 The initial connection layout includes several initial connection graphics 203 (medium gray graphics). Figure 9 (Green graphic in the middle), the initial connecting graphic 203 is used to connect the first initial graphic 201 and the second initial graphic 202, the projections of the first initial graphic 201 and the second initial graphic 202 on the initial layout to be corrected have a first overlapping area A1, and the projection of the initial connecting graphic 203 on the initial layout to be corrected is located within the first overlapping area A1.

[0048] In this embodiment, the extension directions of a plurality of first initial patterns 201 are parallel to the first direction X, and the extension directions of a plurality of second initial patterns 202 are parallel to the second direction Y. The first direction X and the second direction Y are parallel to the surface of the initial layout to be corrected, and the first direction X and the second direction Y are perpendicular to each other. That is, a plurality of first initial patterns 201 are arranged in the second direction Y, a plurality of second initial patterns 202 are arranged in the first direction X, and the extension directions of the first initial patterns 201 and the second initial patterns 202 are perpendicular to each other.

[0049] In this embodiment, the initial connection pattern 203 is located in a portion of the first overlapping region A1, that is, not all of the first overlapping regions A1 are provided with the initial connection pattern 203 for connection.

[0050] In this embodiment, the initial first layer layout, the initial connection layout, and the initial second layer layout are stacked in the vertical space direction.

[0051] In this embodiment, the initial first layer layout, the initial connection layout, and the initial second layer layout are three adjacent layouts in a plurality of layers. The initial first layer layout is the mask design pattern for the subsequent formation of the lower metal layer, the initial second layer layout is the mask design pattern for the subsequent formation of the upper metal layer, and the initial connection layout is the mask design pattern for the subsequent formation of the connection layer connecting the upper metal layer and the lower metal layer.

[0052] In other embodiments, the initial first layer layout can form other types of semiconductor structures.

[0053] Please continue to refer to this. Figure 4 Step S20: Using a grid labeling algorithm, establish the positional association between the initial connected graphic 203 and the first overlapping region A1 on the first initial graphic 201 and the second initial graphic 202.

[0054] The position association relationship can establish an information association between the initial connected graphic 203 and the first overlapping area A1 of the first initial graphic 201 and the second initial graphic 202. After the first initial graphic 201 and the second initial graphic 202 are moved, the initial connected graphic 203 can be moved directly based on the positions of the first initial graphic 201 and the second initial graphic 202 without any information loss.

[0055] Please combine Figures 10 to 12 refer to Figure 5 In this embodiment, a grid labeling algorithm is used to establish the positional association between the initial connected graphic 203 and the first overlapping region A1 on the first initial graphic 201 and the second initial graphic 202, including:

[0056] Step S201: The initial layout to be corrected is meshed based on several first initial graphics and several second initial graphics, wherein the center point of the initial connected graphics coincides with the intersection grid point of the center line of the first initial graphics and the center line of the second initial graphics;

[0057] Step S202: Based on the coordinates of several intersecting grid points, label the position of the initial connected graphic to obtain the initial first label;

[0058] Step S203: Based on the initial connection pattern, the first overlapping region of the projections of the first initial pattern and the second initial pattern is labeled to obtain an initial second label, and the positional association between the initial connection pattern and the first overlapping region on the first initial pattern and the second initial pattern is obtained. The positional association includes: the initial first label and the initial second label correspond one-to-one.

[0059] Please combine Figure 10 Continue to refer to Figure 5 Step S201: Based on several first initial graphics 201 and several second initial graphics 202, the initial layout to be corrected is meshed. The center point of the initial connecting graphics 203 intersects the grid point C of the center line of the first initial graphics 201 and the center line of the second initial graphics 202. Figure 10 (The blue dots in the middle overlap.)

[0060] In this embodiment, the initial layout to be corrected is meshed based on a plurality of first initial graphics 201 and a plurality of second initial graphics 202, including: meshing the initial layout to be corrected using the center lines of the first initial graphics 201 parallel to the first direction X and the center lines of the second initial graphics 202 parallel to the first direction Y. The mesh is formed by the mutually perpendicular center lines of the first initial graphics 201 parallel to the first direction X and the center lines of the second initial graphics 202 parallel to the first direction Y. The meshing process divides the initial layout to be corrected into regions.

[0061] Please combine Figure 11 Continue to refer to Figure 5 Step S202: Based on the coordinates of several intersecting grid points C, the positions of the initial connected graph 203 are labeled to obtain the initial first label Via_n. Figure 11 (Green-filled labels), where n is the number of the initial connected graphs 203.

[0062] The positions of the initial connection patterns 203 are tagged, that is, each initial connection pattern 203 is tagged, and the tag for each initial connection pattern 203 is unique. Figure 11 The diagram illustrates the initial first labels Via_1, Via_2, Via_3, Via_4, and Via_5 of several initial connected graphs 203.

[0063] Please combine Figure 12 Continue to refer to Figure 5 Step S203: Based on the initial connection pattern 203, the first overlapping region A1 of the projections of the first initial pattern 201 and the second initial pattern 202 is labeled to obtain the initial second label Via_tagn. Figure 12 (with the red border label in the middle), obtain the positional relationship between the initial connection graphic 203 and the first overlapping area A1 on the first initial graphic 201 and the second initial graphic 202.

[0064] In this embodiment, the location association relationship includes: a one-to-one correspondence between the initial first tag Via_n and the initial second tag Via_tagn.

[0065] Based on the initial connection pattern 203, the first overlapping region A1 of the projections of the first initial pattern 201 and the second initial pattern 202 is tagged. Since the tag of each initial connection pattern 203 is unique, the first overlapping region A1 of the projections of the first initial pattern 201 and the second initial pattern 202 corresponding to each initial connection pattern 203 is also unique. Therefore, the initial first tag Via_n and the initial second tag Via_tagn correspond one-to-one. Specifying any initial first tag Via_n will match and find the initial second tag Via_tagn of the corresponding first overlapping region A1.

[0066] Figure 12 The diagram illustrates several initial first tags Via_n, corresponding to initial second tags Via_tag1, Via_tag2, Via_tag3, Via_tag4, and Via_tag5.

[0067] Please refer to Figures 13 to 15 Continue to refer to Figure 4 Step S30: Move the first initial graphic 201 multiple times to obtain a first layer layout, the first layer layout including a plurality of first graphics 206; Step S40: Move the second initial graphic 202 multiple times to obtain a second layer layout, the second layer layout including a plurality of second graphics 207, the projections of the first graphics 206 and the second graphics 207 on the initial layout to be corrected have a second overlapping area A2.

[0068] Please refer to Figure 6 In this embodiment, the first initial graphic is moved multiple times to obtain the first layer layout, including:

[0069] Step S301: Divide the outline of the first initial graphic 201 into several first line segments;

[0070] Step S302: Based on the surrounding environment of the first line segments, move the first line segments individually to complete one movement of the first initial graphic 201;

[0071] Step S303: Repeat the above process until the first initial graphic 201 moves to the target position and the first layer layout is obtained. The first layer layout includes a plurality of first graphics 206.

[0072] The surrounding environment of the first line segment includes: the density of the graphics around each first line segment, and the maximum distance that each first line segment can move in the arrangement direction of several first initial graphics. The density of graphics includes high density and low density; the maximum distance that can be moved is the maximum distance that can be moved under the graphics restriction rules.

[0073] In this embodiment, the individual movement of several line segments is performed based on the surrounding environment of the several first line segments, including: acquiring the surrounding environment of each first line segment; and moving the first line segment at a preset first distance along the arrangement direction of the several first initial graphics 201 towards an area with low graphic density, based on the surrounding environment of the first line segment. The arrangement direction of the first initial graphics 201 is the second direction Y.

[0074] Moving towards areas with lower graphic density allows for a larger spatial area, maximizing the release of the process window for the initial first-layer layout line spacing, achieving the stretching of the minimum line spacing (pitch, minimum graphic cycle), and improving the process window.

[0075] Please refer to Figure 13 The arrows located in the second direction Y indicate the direction of movement of each of the first initial shapes 201.

[0076] In this embodiment, the preset first distance is less than or equal to the size of the initial connecting pattern 203 in the arrangement direction of the plurality of first initial patterns 201. That is, the single movement distance of the first initial pattern 201 is less than or equal to the size of the initial connecting pattern 203 in the second direction Y.

[0077] The target location was obtained by simulating the movement of several test first layouts.

[0078] Please refer to Figure 7 In this embodiment, the second initial graphic 202 is moved multiple times to obtain the second layer layout, including:

[0079] Step S401: Divide the outline of the second initial graphic 202 into several second line segments;

[0080] Step S402: Based on the surrounding environment of the second line segments, move the second line segments individually to complete one movement of the second initial shape 202;

[0081] Step S403: Repeat the above process until the second initial graphic 202 moves to the target position to obtain the second layer layout, which includes several second graphics.

[0082] The surrounding environment of the second line segment includes: the density of the graphics around each second line segment, and the maximum distance that each second line segment can move in the arrangement direction of several second initial graphics. The density of graphics includes high density and low density; the maximum distance that can be moved is the maximum distance that can be moved under the graphics restriction rules.

[0083] In this embodiment, the individual movement of several second line segments is performed based on the surrounding environment of each second line segment, including: acquiring the surrounding environment of each second line segment; and moving the second line segment towards a region with low graphic density in the arrangement direction of several second initial graphics 202 at a preset second distance based on the surrounding environment of the second line segment. The arrangement direction of the second initial graphics 202 is the first direction X.

[0084] Moving towards areas with lower graphic density allows for a larger spatial area, maximizing the release of the process window for the initial second-layer layout line spacing, achieving the stretching of the minimum line spacing (pitch, minimum graphic cycle), and improving the process window.

[0085] Please refer to Figure 13 The arrows located in the first direction X indicate the direction of movement of each of the second initial shapes 202.

[0086] In this embodiment, the preset second distance is less than or equal to the size of the initial connecting pattern 203 in the arrangement direction of the plurality of second initial patterns 202. That is, the single movement distance of the second initial pattern 202 is less than or equal to the size of the initial connecting pattern 203 in the first direction X.

[0087] The target location was obtained by simulating the movement of several test second-version maps.

[0088] Please refer to Figure 14 , Figure 14 The diagram illustrates the process of moving the first initial graphic 201 once and the second initial graphic 202 once. After the first initial graphic 201 is moved once, a first transition graphic 204 is obtained, and after the second initial graphic 202 is moved once, a second transition graphic 205 is obtained.

[0089] In this embodiment, the method further includes: after each movement of the first initial graphic 201, using a grid labeling algorithm to label the overlapping area of ​​the projections of the first initial graphic 201 and the second initial graphic 202, and obtaining a transitional second label Via_tagn_m. Figure 14 (The area within the blue border), where n is the number of initial connected graphs 203, and m is the number of moves.

[0090] In this embodiment, the method further includes: after each movement of the second initial graphic 202, a grid labeling algorithm is used to label the overlapping area of ​​the projections of the first initial graphic 201 and the second initial graphic 202 to obtain a transitional second label Via_tagn_m, where n is the number of initial connected graphics 203 and m is the number of movements.

[0091] Please refer to Figure 14 After one movement, the transition second label Via_tagn_m is the overlapping area of ​​the projections of the first transition graphic 204 and the second transition graphic 205. The transition second label Via_tagn_m is illustrated as: Via_tag1_1, Via_tag2_1, Via_tag3_1, Via_tag4_1, Via_tag5_1.

[0092] In this embodiment, the single movement distance of the first initial graphic 201 is less than or equal to the size of the initial connected graphic 203 in the second direction Y, and the single movement distance of the second initial graphic 202 is less than or equal to the size of the initial connected graphic 203 in the first direction X. This ensures that after each selective movement operation of the first initial graphic 201 and the second initial graphic 202, the overlapping area of ​​the upper and lower graphics is in contact with the initial connected graphic 203 before the movement, thereby ensuring that the initial connected graphic 203 information is not lost due to the selective movement of the first initial graphic 201 and the second initial graphic 202. At the same time, the new overlapping area of ​​the upper and lower graphics after the selective movement is selected by the contact of the initial second tag Via_tagn before and after the selective movement of the first initial graphic 201 and the second initial graphic 202, and a transition second tag Via_tagn_m is applied, completing one round of selective movement of the first initial graphic 201 and the second initial graphic 202.

[0093] Please refer to Figure 15 After the first initial graphic 201 is moved multiple times, a first layer layout is obtained, which includes a plurality of first graphics 206; after the second initial graphic 202 is moved multiple times, a second layer layout is obtained, which includes a plurality of second graphics 207. The projections of the first graphics 206 and the second graphics 207 onto the initial layout to be corrected have a second overlapping region A2. Figure 15 (Middle blue area). Figure 15 The first overlapping region A1 is also shown to indicate that the position of the second overlapping region A2 has shifted.

[0094] Please combine Figure 15 and Figure 16 Continue to refer to Figure 4 Step S50: Based on the positional relationship, move the initial connection graphic 203 to the second overlapping area A2 to obtain a connection layout. The connection layout includes several connection graphics 208, which are used to connect the first graphic 206 and the second graphic 207.

[0095] Please refer to Figure 8In this embodiment, based on the positional association, moving the initial connection pattern 203 to the second overlapping area to obtain the connection layout includes:

[0096] Step S501: Label the second overlapping area of ​​the projections of the first and second graphics to obtain the second label;

[0097] Step S502: Based on the second label and the positional association, move the initial connection graphic to the second overlapping area to obtain a connection layout, the connection layout including several connection graphics.

[0098] Please continue to combine Figure 15 refer to Figure 8 Step S501: Tag the second overlapping region A2 of the projections of the first graphic 206 and the second graphic 207 to obtain the second tag Via_tagn_final.

[0099] The second overlapping region A2 of the projections of the first graphic 206 and the second graphic 207 is labeled using a grid labeling algorithm to obtain the second label Via_tagn_final( Figure 15 (The black border outside the blue area) Figure 15 The diagram shows that the second tags are Via_tag1_final, Via_tag2_final, Via_tag3_final, Via_tag4_final, and Via_tag5_final.

[0100] Please combine Figure 16 refer to Figure 8 Step S502: Based on the second tag Via_tagn_final and the position association, move the initial connection graphic 203 to the second overlapping area A2 to obtain the connection layout, which includes several connection graphics 208.

[0101] In this embodiment, the initial connection pattern 203 is moved to the second overlapping area A2 to obtain a connection layout. The connection layout includes a plurality of connection patterns 208, including: generating connection patterns 208 within the area of ​​the second tag Via_tagn_final. The size of the connection pattern 208 is the same as the size of the initial connection pattern 203. The center point of the connection pattern 208 coincides with the intersection grid point of the center line of the first pattern 206 and the center line of the second pattern 207.

[0102] The movement of the first initial pattern 201 and the second initial pattern 203 does not require reference to the position of the initial connecting pattern 203. The first initial pattern 201 and the second initial pattern 203 are moved first, and then the initial connecting pattern 203 is moved in one step. The steps of moving the initial connecting pattern are simplified, the running time is reduced, and the limitation on the degree of freedom of selective movement of the first initial pattern 201 and the second initial pattern 203 caused by referencing the position of the initial connecting pattern 203 is solved. The steps that are not friendly to the correction of optical proximity effect caused by selective movement of the first initial pattern 201 and the second initial pattern 203 are reduced. At the same time, the single exposure process window of high-layer metals at advanced process nodes can be maximized.

[0103] In this embodiment, the pattern correction method further includes: performing optical proximity effect correction on the pattern to be corrected, wherein the pattern to be corrected includes: a first layer pattern, a second layer pattern, and a connecting pattern disposed between the initial first layer pattern and the initial second layer pattern.

[0104] The pattern correction method described above significantly reduces the number of steps in the pattern to be corrected, is more favorable to the optical proximity effect correction process, and improves the accuracy of optical proximity effect correction.

[0105] The optical proximity effect correction is performed on the layout to be corrected, including: optical proximity effect correction on the first layer layout; optical proximity effect correction on the second layer layout; and optical proximity effect correction on the connected layout.

[0106] The optical proximity effect correction process includes: performing simulated exposure on the pattern to be corrected to obtain a simulated exposure pattern; obtaining the edge placement error between the simulated exposure pattern and the target pattern; moving the graphic outline of the pattern to be corrected according to the edge placement error until the edge placement error meets the requirements, and obtaining a corrected pattern. The corrected pattern is the pattern subsequently formed on the photomask.

[0107] Accordingly, embodiments of the present invention also provide a storage medium storing computer instructions thereon, which are executed when the computer instructions are run. Figures 4 to 8 The steps of the method are described.

[0108] Accordingly, embodiments of the present invention also provide a storage terminal, including a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and the processor executes the computer instructions. Figures 4 to 8 The steps of the method are described.

[0109] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for correcting graphics, characterized in that, include: An initial layout to be corrected is provided, comprising: an initial first-layer layout, an initial second-layer layout, and an initial connecting layout disposed between the initial first-layer layout and the initial second-layer layout. The initial first-layer layout comprises a plurality of first initial graphics, the initial second-layer layout comprises a plurality of second initial graphics, and the initial connecting layout comprises a plurality of initial connecting graphics. The initial connecting graphics are used to connect the first initial graphics and the second initial graphics. The projections of the first initial graphics and the second initial graphics onto the initial layout to be corrected have a first overlapping area, and the projection of the initial connecting graphics onto the initial layout to be corrected is located within the first overlapping area. A grid labeling algorithm is used to establish the positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics; The first initial graphic is moved multiple times to obtain a first layer layout, which includes several first graphics. The second initial graphic is moved multiple times to obtain a second layer layout. The second layer layout includes several second graphics. The projections of the first graphic and the second graphic onto the initial layout to be corrected have a second overlapping area. Based on the location association, the initial connection graphic is moved to the second overlapping area to obtain a connection layout. The connection layout includes several connection graphics, which are used to connect the first graphic and the second graphic.

2. The graphic correction method as described in claim 1, characterized in that, A grid labeling algorithm is used to establish a positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics. This includes: performing gridding processing on the initial layout to be corrected based on several first and second initial graphics, where the center point of the initial connected graphic coincides with the intersection grid point of the centerline of the first and second initial graphics; labeling the position of the initial connected graphic according to the coordinates of the intersection grid points to obtain an initial first label; labeling the first overlapping region of the projections of the first and second initial graphics based on the initial connected graphic to obtain an initial second label; and obtaining a positional association between the initial connected graphic and the first overlapping region on the first and second initial graphics, wherein the positional association includes a one-to-one correspondence between the initial first label and the initial second label.

3. The graphic correction method as described in claim 2, characterized in that, Based on the positional association, moving the initial connecting graphic to the second overlapping area to obtain a connecting layout includes: labeling the second overlapping area of ​​the projections of the first graphic and the second graphic to obtain a second label; moving the initial connecting graphic to the second overlapping area according to the second label and the positional association to obtain a connecting layout, wherein the connecting layout includes a plurality of connecting graphics.

4. The graphic correction method as described in claim 3, characterized in that, Moving the initial connecting graphic to the second overlapping area to obtain a connecting graphic includes: generating a connecting graphic within the area of ​​the second label, wherein the size of the connecting graphic is the same as the size of the initial connecting graphic, and the center point of the connecting graphic coincides with the intersection grid point of the center line of the first graphic and the center line of the second graphic.

5. The graphic correction method as described in claim 3, characterized in that, Also includes: After each movement of the first initial graphic, a grid labeling algorithm is used to label the overlapping area of ​​the projections of the first and second initial graphics to obtain a transitional second label.

6. The graphic correction method as described in claim 3, characterized in that, Also includes: After each movement of the second initial graphic, a grid labeling algorithm is used to label the overlapping area of ​​the projections of the first and second initial graphics to obtain a transitional second label.

7. The graphic correction method as described in claim 2, characterized in that, The extension directions of a plurality of the first initial patterns are parallel to the first direction, and the extension directions of a plurality of the second initial patterns are parallel to the second direction. The first direction and the second direction are parallel to the surface of the initial pattern to be corrected, and the first direction and the second direction are perpendicular to each other.

8. The graphic correction method as described in claim 1, characterized in that, The process of moving the first initial graphic multiple times to obtain a first layer layout includes: dividing the outline of the first initial graphic into several first line segments; moving the several first line segments individually according to their surrounding environment to complete one movement of the first initial graphic; repeating the above process until the first initial graphic moves to the target position to obtain a first layer layout, wherein the first layer layout includes several first graphics.

9. The graphic correction method as described in claim 8, characterized in that, The surrounding environment of the first line segment includes: the density of the graphics around each first line segment, and the maximum distance that each first line segment can move in the arrangement direction of the plurality of first initial graphics; according to the surrounding environment of the plurality of first line segments, the individual movement of the plurality of line segments includes: obtaining the surrounding environment of each first line segment; according to the surrounding environment of the first line segment, moving the first line segment in the arrangement direction of the plurality of first initial graphics towards the area with low graphic density by a preset first distance.

10. The graphic correction method as described in claim 9, characterized in that, The preset first distance is less than or equal to the size of the initial connection pattern in the arrangement direction of the plurality of first initial patterns.

11. The graphic correction method as described in claim 1, characterized in that, The process of moving the second initial graphic multiple times to obtain a second layer layout includes: dividing the outline of the second initial graphic into several second line segments; moving the several second line segments individually according to their surrounding environment to complete one movement of the second initial graphic; repeating the above process until the second initial graphic moves to the target position to obtain a second layer layout, wherein the second layer layout includes several second graphics.

12. The graphic correction method as described in claim 11, characterized in that, The surrounding environment of the second line segment includes: the density of the graphics around each second line segment, and the maximum distance that each second line segment can move in the arrangement direction of the plurality of second initial graphics; according to the surrounding environment of the plurality of second line segments, the individual movement of the plurality of line segments includes: obtaining the surrounding environment of each second line segment; according to the surrounding environment of the second line segment, moving the second line segment in the arrangement direction of the plurality of second initial graphics towards the area with low graphic density by a preset second distance.

13. The graphic correction method as described in claim 12, characterized in that, The preset second distance is less than or equal to the size of the initial connection pattern in the arrangement direction of the plurality of second initial patterns.

14. The graphic correction method as described in claim 1, characterized in that, The initial first layer layout, the initial connection layout, and the initial second layer layout are stacked in the vertical space direction.

15. The graphic correction method as described in claim 1, characterized in that, Also includes: Optical proximity effect correction is performed on the layout to be corrected, the layout to be corrected including: a first layer layout, a second layer layout, and a connecting layout disposed between the initial first layer layout and the initial second layer layout.

16. A storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed, they perform the steps of the method according to any one of claims 1 to 15.

17. A storage terminal, comprising a memory and a processor, wherein the memory stores computer instructions executable on the processor, characterized in that, When the processor executes the computer instructions, it performs the steps of the method according to any one of claims 1 to 15.

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