Storage device storing data for driving a vehicle and electronic device including the storage device

Abstract

Storage devices and electronic devices are provided. The storage device includes a memory device including a memory cell array including a plurality of memory cells, and a memory controller configured to, in response to a read command indicating first data and including a tag indicating that target data is to be temperature managed from a host device, obtain a read offset from a read offset table based on first temperature information corresponding to the first data, change an initial read voltage to a read voltage based on the read offset, and control reading of the first data from the memory device using the read voltage.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0178883, filed on December 4, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to storage devices, and more specifically, to storage devices that provide the necessary memory space for storing data used in driving vehicles, and to electronic devices including storage devices. Background Technology

[0003] Driving assistance technologies can assist drivers in operating vehicles, while autonomous driving technologies can identify the surrounding environment and determine driving conditions to control the vehicle to a given destination without driver intervention. Vehicles supporting driving assistance or autonomous driving functions can prevent collisions with obstacles in their path through multiple installed control units and can autonomously drive to their destination while adjusting speed and direction according to road shape. For example, a control unit can be a device that integrates and controls vehicle functions using multiple sensors and actuators of an autonomous driving vehicle. The control unit can be implemented as one of an electronic control unit (ECU), a vehicle control unit (VCU), or a zone control unit (ZCU).

[0004] Multiple control units perform data processing operations to control various components used in driving the vehicle, and can initiate memory operations including storing data generated from corresponding operations and retrieving the stored data. Storage devices, including non-volatile memory, are used to store data. However, the temperature of the operating environment in which the storage device performs memory operations can vary greatly depending on various factors (such as the vehicle's driving area, driving route, and driving environment). For example, the temperature at which the storage device writes data can differ significantly from the temperature at which the storage device reads the same data. In such cases, changes in the threshold voltage distribution due to temperature variations, changes in the retention characteristics of memory cells, and read interference can occur, which can suppress memory operations.

[0005] Therefore, technology is needed to ensure that storage devices installed in vehicles perform memory operations with high integrity in temperature environments with large variations. Summary of the Invention

[0006] One or more example embodiments provide a storage device and an electronic device that includes a storage device, which perform highly reliable memory operations even in temperature environments with large temperature fluctuations.

[0007] According to one aspect of an example embodiment, a storage device includes: a memory device including a memory cell array, the memory cell array including a plurality of memory cells; and a memory controller configured to, in response to a read command from a host device indicating first data and including a tag indicating that target data will be temperature-managed, obtain a read offset from a read offset table based on first temperature information corresponding to the first data, change an initial read voltage to a read voltage based on the read offset, and use the read voltage to control reading the first data from the memory device.

[0008] According to another aspect of an example embodiment, an electronic device includes: a host device configured to process data for controlling vehicle driving; a system memory allocated to the host device and configured to load a read offset table; and a storage device configured to perform memory operations based on commands received from the host device. The host device is further configured to: obtain a read offset from the read offset table based on first temperature information corresponding to first data to be temperature-managed, and send a read command, the read offset, and a first address for the first data to the storage device.

[0009] According to another aspect of the example embodiment, a storage device includes: a memory device including a memory cell array, the memory cell array including a plurality of memory cells; and a memory controller configured to control the memory device to perform one of a write operation and a read operation on the data in conjunction with a host device based on temperature information corresponding to data to be temperature managed. Attached Figure Description

[0010] The above and other aspects and features will become clearer from the following description of exemplary embodiments in conjunction with the accompanying drawings.

[0011] Figure 1 This is a schematic diagram illustrating a vehicle driving system according to an example embodiment.

[0012] Figure 2A This is a block diagram illustrating a vehicle control system according to an example embodiment.

[0013] Figure 2B This is a diagram illustrating the writing to the management table according to an example embodiment.

[0014] Figure 2C This is a diagram illustrating the reading of the offset table according to an example embodiment.

[0015] Figure 3A This is a flowchart describing a method for writing target data according to an example embodiment of a host device and a storage device.

[0016] Figure 3BThis is a diagram illustrating a label used to describe a write command according to an example embodiment.

[0017] Figure 3C This is a diagram used to describe the label according to the example embodiment.

[0018] Figure 4 This is a flowchart describing a method for accessing and managing writes to a management table based on tags and addresses, according to an example embodiment.

[0019] Figure 5 This is a flowchart describing a method for reading target data from a host device and a storage device according to an example embodiment.

[0020] Figure 6 This is a flowchart describing a method for reading target data from a storage device according to an example embodiment.

[0021] Figure 7 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0022] Figure 8 This is a diagram used to describe reading the offset table according to an example embodiment.

[0023] Figure 9 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0024] Figure 10A and Figure 10B This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0025] Figure 11 This is a diagram used to describe reading the offset table according to an example embodiment.

[0026] Figure 12 This is a block diagram illustrating a vehicle control system according to an example embodiment.

[0027] Figure 13 This is a flowchart describing a write operation method of a storage device according to an example embodiment.

[0028] Figure 14 This is a flowchart describing a read operation method of a storage device according to an example embodiment.

[0029] Figure 15 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0030] Figure 16 This is a diagram used to describe the updated read offset table according to an example embodiment.

[0031] Figure 17 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0032] Figure 18A This is a block diagram used to describe a host device according to an example embodiment.

[0033] Figure 18B This is a block diagram used to describe a storage device according to an example embodiment.

[0034] Figure 19 This is a block diagram illustrating a vehicle control system according to an example embodiment.

[0035] Figure 20 This is a flowchart describing a method for writing target data according to an example embodiment of a host device and a storage device.

[0036] Figure 21 This is a flowchart describing a method for reading target data from a host device and a storage device according to an example embodiment.

[0037] Figure 22 This is a block diagram used to describe a host device according to an example embodiment.

[0038] Figure 23 This is a schematic diagram illustrating an autonomous vehicle according to an example embodiment. Detailed Implementation

[0039] In the following description, embodiments are described in detail with reference to the accompanying drawings. Each example embodiment provided in the following description does not exclude the association with one or more features of other examples or additional example embodiments also provided herein or not provided herein but consistent with this disclosure.

[0040] Figure 1 This is a schematic diagram illustrating a vehicle driving system 1 according to an example embodiment.

[0041] Reference Figure 1The vehicle driving system 1 may include a server 2, a network 3, and a vehicle 10. The server 2 can distribute at least one of the operating system, applications, and software used for driving assistance or autonomous driving, as well as data for their updates, to the vehicle 10 via the network 3. The network 3 may be implemented as one of vehicle communication technologies, wireless internet technologies, short-range communication technologies, and mobile communication technologies. For example, at least one of Wireless Local Area Network (WLAN), Wireless Broadband (WiBro), and Global Microwave Access Interoperability (WiMAX) may be used as the wireless internet technology. For example, at least one of Bluetooth, Near Field Communication (NFC), Radio Frequency Identification (RFID), Infrared Data Association (IrDA), Ultra Wideband (UWB), and Zigbee may be used as the short-range communication technology. For example, at least one of New Radio (NR), Long Term Evolution (LTE), LTE Advanced, Code Division Multiple Access (CDMA), and Global System for Mobile Communications (GSM) may be used as the mobile communication technology.

[0042] In one example embodiment, vehicle 10 may include vehicle control system 100, configured to support driver assistance or autonomous driving. Vehicle control system 100 may include a host device 110, a storage device 120, a system memory 130, a temperature sensor 140, and a bus interface 150. Host device 110 may be implemented as one of an electronic control unit (ECU), a vehicle control unit (VCU), and a zone control unit (ZCU). Furthermore, vehicle control system 100 may be referred to as an electronic device for vehicle control.

[0043] In one example embodiment, the host device 110, storage device 120, system memory 130, and temperature sensor 140 can communicate with each other via bus interface 150. In the example embodiment described below, storage device 120 can access system memory 130 via bus interface 150 to reference temperature gauge 131.

[0044] In one example embodiment, storage device 120 and host device 110 may operate in combination to ensure highly reliable memory operation even in environments where external temperatures vary significantly depending on the driving of vehicle 10. For example, when performing memory operations, storage device 120 may perform memory operations based on temperature information of the target data using resources allocated to data processing operations of host device 110. Resources of host device 110 may include system memory 130. Storage device 120 may access system memory 130 allocated to host device 110 to reference or manage temperature table 131, which will be described below. For example, storage device 120 may perform memory operations using minimal resources of host device 110. (Refer to below...) Figures 2A to 19The corresponding example embodiments are described. As another example, storage device 120 can perform memory operations by actively using the resources of host device 110. Referring below... Figures 20 to 22 Describe the corresponding example implementation.

[0045] In one example embodiment, temperature gauge 131 includes information referenced and managed regarding memory operations on target data. In one example embodiment, temperature gauge 131 may include a write management table and a read offset table. For example, when the vehicle control system 100 is powered down, temperature gauge 131 may be backed up to storage device 120, and when the vehicle control system 100 is powered up, the temperature gauge 131 backed up to storage device 120 may be loaded into system memory 130. In some example embodiments, a portion of temperature gauge 131 may be maintained in storage device 120 (rather than in system memory 130).

[0046] In one example embodiment, temperature sensor 140 can directly sense the temperature of storage device 120. In some example embodiments, temperature sensor 140 can indirectly sense the temperature of storage device 120 by sensing characteristics that affect the temperature of storage device 120, such as the interior temperature of vehicle 10 or the interior temperature of vehicle control system 100. Temperature sensor 140 can provide the sensed temperature directly or indirectly to host device 110 or storage device 120 upon request.

[0047] In one example embodiment, storage device 120 may perform memory operations in conjunction with host device 110 based on temperature information of target data obtained from temperature gauge 131 and temperature sensor 140 of system memory 130. When performing a read operation on the target data, storage device 120 can perform an optimal read operation by taking into account the temperature environment during the read operation and the temperature environment during past write operations on the target data. Therefore, the reliability of memory operations of storage device 120 can be greatly improved, and thus, the driving assistance or autonomous driving performance of vehicle control system 100 can also be improved.

[0048] Figure 2A This is a block diagram illustrating a vehicle control system 200 according to an example embodiment. Figure 2B It is shown in detail Figure 2A The diagram of writing to management table 231, and Figure 2C It is shown in detail Figure 2A The diagram shows the reading offset table 223. Figure 2A This section describes an example embodiment in which storage device 220 performs memory operations using relatively few resources of host device 210. Furthermore, for ease of description, previous references are omitted below. Figure 1 The given description.

[0049] Reference Figure 2A The vehicle control system 200 may include a host device 210, a storage device 220, a system memory 230, a temperature sensor 240, and a bus interface 250.

[0050] In one example embodiment, host device 210 may include a first data management circuit 211. For example, the first data management circuit 211 may include components necessary for performing command memory operations on target data of storage device 220. The first data management circuit 211 may be hardware that executes or stores instructions. Operation of the first data management circuit 211 can be understood as operation of host device 210 and / or the processor of host device 210.

[0051] In one example embodiment, storage device 220 may include memory controller 221 and memory device 224. Furthermore, storage device 220 may store a read offset table 223. For example, read offset table 223 may be stored in a buffer memory of memory controller 221. In some example embodiments, read offset table 223 may be stored in memory device 224. For example, memory device 224 may include non-volatile memory (such as NAND flash, vertical NAND (VNAND) flash, NOR flash, resistive random access memory (RRAM), phase-change random access memory (PRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), or spin-torque random access memory (STT-RAM)). Memory controller 221 may include second data management circuitry 222. For example, second data management circuitry 222 may include components for performing memory operations on target data based on temperature information. Second data management circuitry 222 may be hardware for executing instructions or storing instructions. The operation of the second data management circuit 222 can be understood as the operation of the storage device 220 and / or the memory controller 221.

[0052] In one example embodiment, write management table 231 may be loaded from storage device 220 into system memory 230. Write management table 231 and read offset table 223 may be included in... Figure 1 The temperature table 131. The write management table 231 may include information referenced and managed regarding write or read operations on the target data of the storage device 220, and the read offset table 223 may include information referenced and managed regarding read operations on the target data of the storage device 220.

[0053] In one example embodiment, the first data management circuit 211 can identify whether the data is target data for which temperature-based memory operations will be performed or regular data for which conventional memory operations will be performed. Target data can be defined as data for which temperature management will be performed. For example, target data and regular data can be categorized based on the type of memory cell in the plurality of memory cells of the memory device 224 in which the corresponding data is written. As a specific example, data designated to be written to a first memory cell can correspond to target data, the first memory cell operating as one of the multiple memory cells of the memory device 224, a multi-level cell (MLC), a three-level cell (TLC), or a four-level cell (QLC). Data designated to be written to a second memory cell can correspond to regular data, the second memory cell operating as a single-level cell (SLC) in the plurality of memory cells of the memory device 224.

[0054] Furthermore, for example, target data and regular data can be categorized based on data type. As a specific example, target data may correspond to data concerning at least one of the operating system, applications, and software executed by host device 210 to control vehicle driving. Regular data may correspond to driving data generated while the vehicle is being driven. Driving data can be used for driver assistance or autonomous driving. Since regular data corresponds to driving records, it can be frequently stored or deleted. Therefore, regular data can be designated as memory cells that operate as a type of memory cell supporting high program / erase (PE) cycles (e.g., SLC) in storage device 120, and target data can be designated as memory cells that operate as a type of memory cell with relatively low reliability (e.g., TLC) in storage device 120. As described above, multiple corresponding memory cells (or multiple memory devices included in storage device 120) can be categorized into spaces for storing target data and spaces for storing driving data, and the type of data fitting the categorized spaces can be appropriately stored using a namespace operation method.

[0055] In one example embodiment, based on the file header of the data corresponding to the data received from the outside, the first data management circuit 211 can identify whether the corresponding data is target data or regular data. For example, based on the fact that the file header of the received data is an indication of data about software executed by the host device 210, the first data management circuit 211 can identify that the corresponding data is target data. Furthermore, the first data management circuit 211 can send the corresponding data to the storage device 220, so that the corresponding data generated by processing the data received from the outside via the host device 210 is written to the storage device 224.

[0056] In one example embodiment, the first data management circuit 211 can manage target data to be written to a specific memory region of the memory device 224. For example, the first data management circuit 211 can manage target data to be written to a second memory cell operating as a TLC among a plurality of memory cells of the memory device 224. The first data management circuit 211 can set multiple address ranges and can generate addresses such that the target data is stored in one of the multiple address ranges according to the type of the target data. For example, the multiple address ranges can be set in units of logical block addresses (LBAs). As a specific example, the first data management circuit 211 can set a first address range to an m-th address range (m is an integer of 2 or greater), and when the target data is data about an operating system executed by the host device 210, the first data management circuit 211 can generate an address belonging to the first address range corresponding to the corresponding type of data, and can send the target data and the generated address together with a write command to the memory device 220. For example, the multiple address ranges managed by the first data management circuit 211 may be based on logical addresses, and the memory controller 221 may translate the addresses received from the first data management circuit 211 based on a mapping table representing the mapping relationship between logical addresses and physical addresses.

[0057] In the following text, an example embodiment of a write operation in combination with the storage device 220 and the host device 210 will be described.

[0058] In one example embodiment, the first data management circuit 211 may send a write command, an address, and target data to the storage device 220, including a tag indicating that the data currently being sent to the storage device 220 is target data (i.e., to be temperature managed), so as to write the target data to the memory device 224.

[0059] In one example embodiment, the second data management circuit 222 can identify that the received data is target data based on a tag included in the write command. The second data management circuit 222 can obtain necessary temperature information from the write management table 231 of the system memory 230 and the temperature sensor 240 based on the identification result (i.e., necessary temperature information can be obtained based on the identification that the received data is target data). The second data management circuit 222 can access the system memory 230 and can obtain from the write management table 231 a first temperature of the memory device 220 prior to the start of a previous (or earlier) write operation for the memory region of the memory device 224 corresponding to the address range to which the target data's address belongs.

[0060] Further reference Figure 2BThe write management table 231 may include temperature history as target data is written to memory regions corresponding to each address range from the first address range to the third address range. For example, the first address range may be recorded over time in a first memory region of memory device 224 corresponding to the first address range, the first address range being a logical address range configured to store first type target data (e.g., data about an operating system executed by host device 210) and temperatures TEMP11 and TEMP21 prior to the write operation being initiated. The second address range may be recorded over time in a second memory region of memory device 224 corresponding to the second address range, the second address range being a logical address range configured to store second type target data (e.g., data about an application executed by host device 210) and temperatures TEMP12 and TEMP22 prior to the write operation being initiated. A third address range can be recorded over time in a third memory region of memory device 224 corresponding to the third address range. The third address range is a logical address range configured to store third type target data (e.g., data about software executed by host device 210) and temperatures TEMP13 and TEMP23 prior to the initiation of a write operation. For example, the difference between temperatures corresponding to an address range in write management table 231 can exceed a threshold. That is, when the difference between a past temperature (e.g., temperature "TEMP11") corresponding to an address range (e.g., the first address range) and the current temperature (e.g., temperature "TEMP21") exceeds a threshold, the current temperature (e.g., temperature "TEMP21") can be recorded in write management table 231. As a specific example, when the address received with the target data belongs to the first address range, the second data management circuit 222 can obtain temperature "TEMP21," which is the first temperature of memory device 220 prior to the start of the previous (or earlier) write operation for the first memory region of memory device 224 corresponding to the first address range. However, Figure 2B The write management table 231 is provided as an example, and the example embodiment is not limited thereto.

[0061] Return to reference Figure 2AIn one example embodiment, the second data management circuit 222 can obtain the current temperature of the storage device 220 before a write operation for the target data begins from the temperature sensor 240. The current temperature can be based on the time point at which the storage device 220 receives the write command. The second data management circuit 222 can compare the first temperature obtained from the write management table 231 with the current temperature obtained from the temperature sensor 240, and can manage the write management table 231 based on the comparison result. For example, when the difference between the obtained first temperature and the obtained current temperature exceeds a threshold, the second data management circuit 222 can update the write management table 231, such that the current temperature is added to the write management table 231. When the difference between the obtained first temperature and the obtained current temperature is less than or equal to the threshold, the second data management circuit 222 can omit updating the write management table 231. Thereafter, in response to the write command, the second data management circuit 222 can perform a write operation on the target data using the memory device 224. Thus, the second data management circuit 222 can perform a write operation on the target data based on the temperature information of the target data. At this point, the write operation for the target data may include managing the write to the management table 231 based on the temperature information of the target data.

[0062] In the following text, an example embodiment of a read operation combining storage device 220 and host device 210 will be described.

[0063] In one example embodiment, the first data management circuit 211 may send a read command and address, including a tag indicating that the requested data being read is target data (i.e., to be temperature-managed), to the storage device 220 in order to read the target data from the storage device 220.

[0064] In one example embodiment, the second data management circuit 222 can identify that the data requested to be read is target data based on a tag included in the read command. The second data management circuit 222 can obtain necessary temperature information from the write management table 231 of the system memory 230, the temperature sensor 240, and the read offset table 223 based on the identification result. The second data management circuit 222 can access the system memory 230 and can obtain a recent first temperature from the write management table 231, the recent first temperature corresponding to a memory region of the memory device 224 corresponding to the address range to which the target data's address belongs. As a specific example, in Figure 2B The temperature “TEMP21” can be obtained from the write management table 231. The temperature “TEMP21” is the most recent first temperature, which corresponds to the first memory region of the memory device 224 corresponding to the first address range to which the address of the target data belongs.

[0065] In one example embodiment, the second data management circuit 222 may obtain from the temperature sensor 240 the current second temperature of the storage device 220 prior to the commencement of a read operation for the target data. The current second temperature may be based on the time point at which the storage device 220 receives the read command.

[0066] In one example embodiment, the second data management circuit 222 may obtain a read offset from the read offset table 223 based on the obtained first temperature and the obtained second temperature.

[0067] Further reference Figure 2C The read offset table 223 may include multiple read offsets ROS1 to ROS49, which are mapped to multiple first temperature ranges TEMP_R11 to TEMP_R71 and multiple second temperature ranges TEMP_R12 to TEMP_R72. The first temperature of the storage device 220 before the start of a write operation for the target data may belong to the multiple first temperature ranges TEMP_R11 to TEMP_R71, and the second temperature of the storage device 220 before the start of a read operation for the target data may belong to the multiple second temperature ranges TEMP_R12 to TEMP_R72. Each of the multiple read offsets ROS1 to ROS49 may be set based on the first temperature range mapped to it from the multiple first temperature ranges TEMP_R11 to TEMP_R71, the second temperature range mapped to it from the multiple second temperature ranges TEMP_R12 to TEMP_R72, and the difference between the mapped first temperature range and the mapped second temperature range. Furthermore, multiple first temperature ranges TEMP_R11 to TEMP_R71 and multiple second temperature ranges TEMP_R12 to TEMP_R71 can be determined based on the temperature ranges that the storage device 220 must support for conformity with a predetermined memory standard. As a specific example, the second data management circuit 222 can obtain a read offset ROS1 from the read offset table 223 when the first temperature obtained from the write management table 231 belongs to the temperature range TEMP_R11 and the second temperature obtained from the temperature sensor 240 belongs to the temperature range TEMP_R12. However... Figure 2C The read offset table 223 is provided as an example, and the example embodiment is not limited thereto.

[0068] Return to reference Figure 2AIn one example embodiment, the second data management circuit 222 can change the read voltage based on a read offset obtained in response to a read command, and can perform a read operation using the memory device 224 based on the changed read voltage. For example, the second data management circuit 222 can control the memory device 224 to read target data, such that the memory device 224 can perform a read operation using the changed read voltage. Thus, the second data management circuit 222 can perform a read operation on the target data based on the temperature information of the target data.

[0069] In one example embodiment, the read operation of the second data management circuit 222 for target data may include the management of the read offset table 223. For example, the second data management circuit 222 may manage the read offset table 223 based on the result of the read operation for the target data. For example, the second data management circuit 222 may monitor the temperature environment of the storage device 220 and manage the read offset table 223 based on the monitoring results. Furthermore, for example, the second data management circuit 222 may manage the read offset table 223 based on the operating state of the memory device 224.

[0070] Figure 3A This is a flowchart describing a method for writing target data using a host device 210 and a storage device 220 according to an example embodiment. Figure 3B It is used to describe Figure 3A A diagram showing the label of the write command, and Figure 3C It is used to describe Figure 3B An illustration of an example embodiment of the label.

[0071] Reference Figure 3A In operation S100, the host device 210 may generate a tag indicating that data will be subject to temperature management. For example, the tag may include information allowing the storage device 220 to identify data received from the host device 210 as target data. In some example embodiments, the storage device 220 may identify data received from the host device 210 as target data based on an address received from the host device 210 along with a write command. As described above, this can be due to a method of managing target data designated to be written to a specific memory region corresponding to a specific address range.

[0072] In operation S110, the host device 210 can send the write command, address and target data including the tag to the storage device 220.

[0073] Further reference Figure 3BThe command CMD can include bits 1 through N (BN), and bits BK1 through BK2 among bits 1 through N (BN) can correspond to tags (TAG). Bits BK1 through BK2 can be located at positions specified by a predetermined memory standard. The configuration of the command CMD can be applied to... Figure 3A The write command. Furthermore, the configuration of the CMD command can be applied to the read commands described below. The TAG indicates whether the data corresponding to the CMD command is target data or regular data.

[0074] Further reference Figure 3C A tag can have one of multiple values, V1 to VX, and these values ​​can be mapped one-to-one to multiple temperatures, TEMP_R1 to TEMP_RX. For example, when a tag has the value "V1", the temperature of the storage device 220 at the time of generating the command CMD can indicate the temperature "TEMP_R1". The host device 210 can determine the value of the tag by accessing the temperature sensor 240 and obtaining the temperature "TEMP_R1" when generating the command CMD.

[0075] Return to reference Figure 3A In operation S120, storage device 220 can access and manage the write management table based on tags and addresses. For example, storage device 220 can obtain the most recent first temperature within the address range to which the address received from the write management table belongs, based on a tag indicating that the received data is target data. Furthermore, storage device 220 can obtain the current temperature from temperature sensor 240. Additionally, when the tag of a write command indicates the current temperature, storage device 220 can skip accessing temperature sensor 240 and obtain the current temperature from the tag. Storage device 220 can compare the most recently obtained first temperature with the obtained current temperature and manage the write management table based on the comparison result.

[0076] In operation S130, storage device 220 can write target data into memory device 224.

[0077] Figure 4 It is used to describe Figure 3A The flowchart shows a specific example of operation S120.

[0078] Reference Figure 4 ,exist Figure 3A In operation S121 following operation S110, storage device 220 may access the write management table in response to a tag included in the write command.

[0079] In operation S122, storage device 220 can obtain the most recent first temperature corresponding to the address range to which the address received from host device 210 belongs from the write management table. In some example embodiments, storage device 220 can determine whether to access the write management table by referring to a bitmap, so that the write management table can be effectively accessed. As a specific example, storage device 220 can manage whether the most recent first temperature corresponding to the address range to which the address received from host device 210 belongs is stored in the write management table by using a bitmap. Storage device 220 can obtain the most recent first temperature by accessing the write management table based on a bitmap indicating that the most recent first temperature is stored in the write management table. Furthermore, storage device 220 can directly store the current temperature in the write management table based on a bitmap indicating that the most recent first temperature is not stored in the write management table.

[0080] In operation S123, storage device 220 may determine whether the difference between the current temperature and the most recent first temperature exceeds a threshold. For example, storage device 220 may obtain the current temperature directly from temperature sensor 240 or from a tag included in a write command.

[0081] When operation S123 is "yes" (i.e., the difference between the current temperature and the most recent first temperature exceeds a threshold), operation S124 proceeds, allowing storage device 220 to update the management table based on the current temperature. Further reference... Figure 3C For example, when the received address belongs to the third address range, the storage device 220 can update the temperature "TEMP13" corresponding to the most recent first temperature to the temperature "TEMP23" corresponding to the current temperature. In the following text, Figure 3A Operation S130 can then proceed. When operation S123 is "No" (i.e., the difference between the current temperature and the most recent first temperature does not exceed a threshold), Figure 3A Operation S130 can be performed while bypassing operation S124.

[0082] Figure 5 This is a flowchart describing a method for reading target data using a host device 210 and a storage device 220 according to an example embodiment.

[0083] Reference Figure 5In operation S200, the host device 210 may generate a tag indicating that data will be subject to temperature management. For example, the tag may include information allowing the storage device 220 to identify data requested to be read from the host device 210 as target data. In some example embodiments, the storage device 220 may identify data requested to be read from the host device 210 as target data based on an address received from the host device 210 along with a read command. As described above, this can be due to a method of managing target data designated to be written to a specific memory region corresponding to a specific address range.

[0084] In operation S210, the host device 210 can send a tag reading command and address to the storage device 220. As described above. Figure 3B As shown, the label of a read command may include a bit at a specified position among the bits contained in the read command.

[0085] Return to reference Figure 5 In operation S220, storage device 220 can obtain the most recent first temperature from the write management table based on the tag and address. For example, storage device 220 can obtain the most recent first temperature of the address range to which the address received from the write management table belongs based on the tag indicating that the data requested to be read is target data.

[0086] In operation S230, storage device 220 may obtain a read offset from a read offset table based on a recent first temperature and a current second temperature. For example, the current second temperature may correspond to the temperature of storage device 220 before a read operation begins in response to a received read command. Storage device 220 may obtain a read offset mapped to the recent first temperature and the current second temperature from the read offset table. For example, the obtained read offset may be based on a first temperature range to which the first temperature belongs, a second temperature range to which the second temperature belongs, and the difference between the first temperature range and the second temperature range.

[0087] In operation S240, storage device 220 can read target data from memory device based on a read offset. For example, storage device 220 can change the read voltage based on the read offset, and can read target data from memory device based on the changed read voltage.

[0088] Figure 6 It is used to describe Figure 5 The flowchart shows specific examples of operations S220, S230, and S240.

[0089] Reference Figure 6 ,exist Figure 5 In operation S221 following operation S210, storage device 220 may access the write management table in response to a tag included in a read command. In some example embodiments, storage device 220 may access the write management table by additionally referring to the reference above. Figure 4 The described bitmap is used to access the write management table.

[0090] In operation S222, storage device 220 can obtain from the write management table the most recent first temperature corresponding to the address range to which the address received from host device 210 belongs.

[0091] In operation S231, storage device 220 can determine whether the difference between the most recent first temperature and the current second temperature exceeds a threshold. For example, the corresponding threshold can be set as... Figure 4 The threshold values ​​for the update criteria in the write management table differ. For example, storage device 220 may obtain the current second temperature directly from a temperature sensor before initiating a read operation in response to a received read command, or it may obtain the current second temperature from a tag included in the read command.

[0092] When operation S231 is "yes" (i.e., the difference exceeds the threshold), operation S232 continues, and storage device 220 can obtain the read offset corresponding to the most recent first temperature and the current second temperature from the read offset table.

[0093] In operation S241, the storage device 220 can change the read voltage based on the read offset. For example, the storage device 220 can change the level of the read voltage by reflecting the read offset to a preset level of the read voltage.

[0094] In operation S242, storage device 220 can read target data from the memory device based on the changed read voltage.

[0095] When operation S231 is "No" (i.e., the difference does not exceed the threshold), operation S243 proceeds, enabling storage device 220 to read target data from the memory device based on a read voltage with a preset level.

[0096] The target data read in operation S242 or operation S231 can be sent to the host device 210.

[0097] Figure 7 This is a flowchart illustrating a method for updating and reading an offset table, based on an example embodiment.

[0098] Reference Figure 7 ,exist Figure 5 In operation S250 following operation S240, storage device 220 can determine whether the read operation in operation S240 was successful. For example, storage device 220 can decode the target data read from the memory device according to the error correction code (ECC) method, and can determine whether the read operation was successful by referring to the parity bit of the decoded data.

[0099] When operation S250 is "yes" (i.e., the read operation is determined to be successful), operation S251 proceeds, enabling the storage device 220 to complete the read operation.

[0100] When operation S250 is "No" (i.e., the read operation is determined to be unsuccessful), operation S252 proceeds, enabling the storage device 220 to perform read recovery. For example, the storage device 220 can perform read recovery using predetermined firmware or hardware for data recovery, allowing the storage device 220 to determine the optimal read voltage level to successfully read the target data from the memory device.

[0101] In operation S253, storage device 220 can update the read offset table based on the read recovery result. For example, storage device 220 can be used in... Figure 5 The read offset obtained in operation S230 is used to update the read offset table based on the level of the optimal read voltage determined in operation S252 in response to the failure of the read operation.

[0102] Figure 8 This is a diagram used to describe the reading of offset table 223' according to an example embodiment.

[0103] Reference Figure 8 The read offset table 223' may include multiple first read offsets ROS9 to ROS13, ROS16 to ROS20, ROS23 to ROS27, ROS30 to ROS34 and ROS37 to ROS41. The multiple first read offsets ROS9 to ROS13, ROS16 to ROS20, ROS23 to ROS27, ROS30 to ROS34 and ROS37 to ROS41 are mapped to a portion of multiple first temperature ranges TEMP_R11 to TEMP_R71 to which the first temperature of the storage device 220 may belong before the start of the write operation for the target data, namely TEMP_R21 to TEMP_R61, and a portion of multiple second temperature ranges TEMP_R12 to TEMP_R72 to which the second temperature of the storage device 220 may belong before the start of the read operation for the target data, namely TEMP_R22 to TEMP_R62. For example, a portion of the multiple first temperature ranges TEMP_R11 to TEMP_R71, specifically TEMP_R21 to TEMP_R61, and a portion of the multiple second temperature ranges TEMP_R12 to TEMP_R72, specifically TEMP_R22 to TEMP_R62, can be determined based on the operating environment of the storage device. That is, reading offset table 223' can be determined taking into account the operating environment of the storage device (e.g., the temperature range expected to operate most of the time).

[0104] In one example embodiment, in read offset table 223', multiple second read offsets mapped to the remaining portions of TEMP_R11 and TEMP_R71 in multiple first temperature ranges TEMP_R11 to TEMP_R71 and the remaining portions of TEMP_R12 and TEMP_R72 in multiple second temperature ranges TEMP_R12 to TEMP_R72 can be obtained from... Figure 2A The second data management circuit 222 is used to update and populate.

[0105] Figure 9 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0106] Reference Figure 9 ,exist Figure 6 In operation S340 following operation S231, storage device 220 can determine whether the read offset corresponding to the most recent first temperature and the current second temperature exists in the read offset table.

[0107] When operation S340 is "No" (i.e., the read offset does not exist in the read offset table), operation S350 proceeds, enabling storage device 220 to read target data from memory device and update the read offset table based on the read result.

[0108] When operation S340 is "yes" (i.e., the read offset does exist in the read offset table), operation S360 proceeds, enabling storage device 220 to read target data from the memory device based on the read offset obtained from the read offset table.

[0109] Figure 10A and Figure 10B It is used to describe Figure 9 The flowchart shows a specific example of the operation of S350.

[0110] Reference Figure 10A In operation S351A, storage device 220 can read target data from memory device. For example, in Figure 9 In operation S340, storage device 220 may read target data from storage device based on a read voltage with a preset level in response to the absence of a corresponding read offset in read offset table 223'.

[0111] In operation S352A, storage device 220 can determine whether the read operation in operation S351A was successful.

[0112] When operation S352A is "yes" (i.e., the read operation is determined to be successful), operation S353A proceeds, enabling storage device 220 to complete the read operation.

[0113] When operation S352A is "No" (i.e., the read operation is determined to be unsuccessful), operation S354A proceeds, enabling storage device 220 to perform read recovery. For example, storage device 220 may sequentially execute multiple defense codes and perform read recovery, enabling storage device 220 to determine the optimal read voltage level and successfully read target data from the memory device.

[0114] In operation S355A, storage device 220 may update the read offset table based on the read recovery results. For example, storage device 220 may fill in read offsets that are not present in the read offset table based on the level of the optimal read voltage determined in operation S354A.

[0115] Further reference Figure 10B In operation S351B, the storage device 220 can respond to... Figure 9 In operation S340, if there is no read offset, read recovery is performed immediately to read the target data from the memory device.

[0116] In operation S352B, storage device 220 can update the read offset table based on the read recovery results.

[0117] In some example embodiments, storage device 220 may respond to in Figure 9 In operation S340, there is no read offset; a temporary read offset is generated by performing an interpolation operation using the read offsets in the read offset table. The storage device 220 can change the read voltage based on the temporary read offset and can perform a read operation based on the changed read voltage. In some example embodiments, the storage device 220 can update the read offset table based on the temporary read offset.

[0118] Figure 11 This is a diagram used to describe the reading of offset table 223'' according to an example embodiment.

[0119] Reference Figure 11The read offset table 223'' may include multiple first read offsets ROS17 to ROS20, ROS24 to ROS27, ROS31 to ROS34 and ROS38 to ROS41. The multiple first read offsets ROS17 to ROS20, ROS24 to ROS27, ROS31 to ROS34 and ROS38 to ROS41 are mapped to a portion of a multiple first temperature range TEMP_R11 to TEMP_R71 to which the first temperature of the storage device 220 may belong before the start of the write operation for the target data, namely TEMP_R31 to TEMP_R61, and a portion of a multiple second temperature range TEMP_R12 to TEMP_R72 to which the second temperature of the storage device may belong before the start of the read operation for the target data, namely TEMP_R32 to TEMP_R62. For example, a portion of the multiple first temperature ranges TEMP_R11 to TEMP_R71 (TEMP_R31 to TEMP_R61) and a portion of the multiple second temperature ranges TEMP_R12 to TEMP_R72 (TEMP_R32 to TEMP_R62) can be determined based on the operating environment of the storage device. That is, the read offset table 223'' can be determined taking into account the temperature range in which the storage device is expected to operate most of the time.

[0120] In one example embodiment, in the read offset table 223'', the remaining portions of TEMP_R11, TEMP_R21, and TEMP_R71 in the plurality of first temperature ranges TEMP_R11 to TEMP_R71, and the remaining portions of TEMP_R12, TEMP_R22, and TEMP_R72 in the plurality of second temperature ranges TEMP_R12 to TEMP_R72, may not be overwritten. Therefore, the read offset table 223'' can be compared to Figure 2C Read offset table 223 and Figure 8 The read offset table 223' takes up less capacity.

[0121] Figure 12 This is a block diagram illustrating a vehicle control system 200' according to an example embodiment. Figure 12 In the middle, previous references are omitted. Figure 2A The given description.

[0122] Reference Figure 12 The vehicle control system 200' may include a host device 210, a storage device 220, a system memory 230, a temperature sensor 240, a bus interface 250, and a thermal management system 260.

[0123] In one example embodiment, the thermal management system 260 may perform thermal management operations under the control of the first data management circuit 211 to regulate the temperature of the storage device 220. In one example embodiment, the thermal management system 260 may perform thermal management operations under the control of the first data management circuit 211 to regulate the internal temperature of the vehicle control system 200'. In one example embodiment, the thermal management system 260 may include any one or any combination of a heating device, a cooling device, a fan, and a water circulator.

[0124] In one example embodiment, the second data management circuit 222 may determine whether the current first temperature of the storage device 220, received from the first data management circuit 211 before the start of a write operation for the target data, is covered by the read offset table 223. For example, the second data management circuit 222 may determine that the current first temperature is not covered by the read offset table 223 based on the determination that the current first temperature belongs to a temperature range outside of the "first temperature range (or a part of the first temperature range) covered by the read offset table 223".

[0125] In one example embodiment, the second data management circuit 222 may send a thermal management request to the first data management circuit 211 in response to determining that the current first temperature is not covered by the read offset table 223. The first data management circuit 211 may control the thermal management system 260 based on the thermal management request to adjust the current first temperature so that it can be covered by the read offset table 223. Thereafter, the second data management circuit 222 may perform a write operation on the target data.

[0126] In one example embodiment, the second data management circuit 222 may determine whether the current second temperature of the storage device 220 prior to the commencement of a read operation for target data requested to be read from the first data management circuit 211 is covered by the read offset table 223. For example, the second data management circuit 222 may determine that the current second temperature is not covered by the read offset table 223 based on the determination that the current second temperature belongs to a temperature range outside of the "second temperature range (or a portion of the second temperature range covered by the read offset table 223)".

[0127] In one example embodiment, the second data management circuit 222 may send a thermal management request to the first data management circuit 211 in response to determining that the current second temperature is not covered by the read offset table 223. The first data management circuit 211 may control the thermal management system 260 based on the thermal management request to adjust the current second temperature so that it can be covered by the read offset table 223. Thereafter, the second data management circuit 222 may perform a read operation on the target data.

[0128] Figure 13 It is used to describe Figure 12The flowchart illustrates the write operation method of the storage device 220. In the following text, the operation of the storage device 220 can be understood as the operation of the second data management circuit 222 or the operation of the memory controller 221.

[0129] Reference Figure 13 In operation S400, the storage device 220 can receive a write command including a tag, an address, and target data. The tag can indicate that the currently received data is target data.

[0130] In operation S410, storage device 220 may determine whether the current first temperature of storage device 220 before starting a write operation according to the received write command has been overwritten by read offset table 223.

[0131] When operation S410 is "No" (i.e., the current first temperature is not overwritten by the read offset table), operation S420 proceeds, allowing storage device 220 to send a thermal management request to host device 210. For example, the thermal management request may include information indicating whether to increase or decrease the current first temperature. In some example embodiments, the thermal management request may also include information indicating how much to adjust the temperature. Host device 210 can adjust the current first temperature of storage device 220 by controlling thermal management system 260 in response to the thermal management request. Operation S410 can then be repeated.

[0132] When operation S410 is "yes" (i.e., the current first temperature is overwritten by the read offset table), operation S430 proceeds, enabling storage device 220 to access and manage the write management table based on tags and addresses.

[0133] In operation S440, storage device 220 can write target data into memory device 224.

[0134] Figure 14 It is used to describe Figure 12 The flowchart illustrates the read operation method of the storage device 220. In the following text, the operation of the storage device 220 can be understood as the operation of the second data management circuit 222 or the operation of the memory controller 221.

[0135] Reference Figure 14 In operation S500, the storage device 220 can receive a read command and an address, including a tag. The tag can indicate that the data currently being read is the target data.

[0136] In operation S510, storage device 220 may determine whether the current second temperature of storage device 220 before starting a read operation according to the received read command is overwritten by read offset table 223.

[0137] When operation S510 is "No" (i.e., the current second temperature is not overwritten by the read offset table), operation S520 proceeds, allowing storage device 220 to send a thermal management request to host device 210. For example, the thermal management request may include information indicating whether to increase or decrease the current second temperature. In some example embodiments, the thermal management request may also include information indicating how much to adjust the temperature. Host device 210 can adjust the current second temperature of storage device 220 by controlling thermal management system 260 in response to the thermal management request. Operation S510 can then be repeated.

[0138] When operation S510 is "yes" (i.e., the current second temperature is overwritten by the read offset table), operation S530 proceeds, enabling storage device 220 to obtain the most recent first temperature from the write management table based on the tag and address.

[0139] In operation S540, storage device 220 can obtain a read offset from a read offset table based on the most recent first temperature and the current second temperature.

[0140] In operation S550, storage device 220 can read target data from memory device based on read offset.

[0141] Figure 15 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0142] Reference Figure 15 In operation S600, the storage device can monitor write or read commands received in a specific temperature environment not covered by the read offset table. The specific temperature environment may correspond to a specific temperature or a specific temperature range.

[0143] In operation S610, the storage device can determine whether the number of monitoring results exceeds a threshold.

[0144] When operation S610 is "yes" (i.e., the number of monitoring results exceeds the threshold), operation S620 proceeds, causing the storage device to add the read offset corresponding to the specific temperature environment to the read offset table.

[0145] Figure 16 It is used to describe by Figure 15 A diagram showing the updated read offset table 223'''.

[0146] Reference Figure 16 ,and Figure 2C Compared to the read offset table 223, the read offset table 223''' may also include temperature ranges "TEMP_R81" and "TEMP_R82" and the read offsets "ROS50" mapped to them.

[0147] For example, when more than a threshold number of write commands are received in the temperature environment corresponding to the temperature range "TEMP_R81", and more than a threshold number of read commands are received in the temperature environment corresponding to the temperature range "TEMP_R82", the storage device can generate a read offset "ROS50" corresponding to the temperature ranges "TEMP_R81" and "TEMP_R82" to update the read offset table 223'''.

[0148] Figure 15 and Figure 16 This aspect can also be applied to Figure 8 and Figure 11 Read offset tables 223' and 223''.

[0149] Figure 17 This is a flowchart describing a method for updating and reading an offset table according to an example embodiment.

[0150] Reference Figure 17 In operation of S700, the storage device can monitor the P / E cycle of the storage device.

[0151] In operation S710, the storage device can determine whether the P / E cycle exceeds the threshold cycle.

[0152] When operation S710 is "yes" (i.e., the P / E cycle exceeds the threshold cycle), operation S720 proceeds, allowing the storage device to fully update the read offset table.

[0153] When operation S710 is "No" (i.e., the P / E cycle has not exceeded the threshold cycle), operation S700 can be repeated.

[0154] Figure 18A It is used to describe Figure 12 A block diagram illustrating an embodiment example of the host device 210, and Figure 18B It is used to describe Figure 12 A block diagram illustrating an example implementation of the storage device 220.

[0155] Reference Figure 18A The host device 210 may include a first data management circuit 211, and the first data management circuit 211 may include a tag generation circuit 211_1 and a thermal control circuit 211_2.

[0156] In one example embodiment, tag generation circuit 211_1 can generate tags included in commands for controlling memory operations of storage device 220. The tags can indicate that the data requested to be written or read is target data.

[0157] In one example embodiment, thermal control circuitry 211_2 may control thermal management system 260 to regulate the temperature of storage device 220 in response to a thermal management request received from storage device 220.

[0158] Further reference Figure 18B The storage device 220 may include a second data management circuit 222, and the second data management circuit 222 may include a first table update circuit 222_1, a second table update circuit 222_2, and a thermal management request circuit 222_3.

[0159] In one example embodiment, the first table update circuit 222_1 can update the management table based on the above features.

[0160] In one example embodiment, the second table update circuit 222_2 can update the read offset table based on the features described above.

[0161] In one example embodiment, thermal management request circuitry 222_3 may generate a thermal management request to be sent to host device 210, such that the current temperature of storage device 220 can be overwritten by a read offset table.

[0162] Figure 19 This is a block diagram illustrating a vehicle control system 300 according to an example embodiment. Figure 19 The present invention describes an example embodiment in which storage device 320 performs memory operations by actively using the resources of host device 310. In the following description, the focus will be on... Figure 12 The differences.

[0163] Reference Figure 19 The vehicle control system 300 may include a host device 310, a storage device 320, a system memory 330, a temperature sensor 340, a bus interface 350, and a thermal management system 360.

[0164] In one example embodiment, host device 310 may include data management circuitry 311. Storage device 320 may include memory controller 321 and memory device 324. Write management table 331 and read offset table 332 may be loaded into system memory 330.

[0165] In one example embodiment, the data management circuit 311, as a component necessary for executing operations that command target data for storage device 320, is executable. Figure 12 The operation of the first data management circuit 211, and can also perform Figure 12 The operation of the second data management circuit 222. Refer to the following... Figures 20 to 21 Describe a specific example.

[0166] Figure 20This is a flowchart describing a method for writing target data to a host device 310 and a storage device 320 according to an example embodiment. In the following, the operation of the host device 310 can be understood as... Figure 19 The operation of the data management circuit 311.

[0167] Reference Figure 20 In operation S700, the host device 310 can identify that the data is target data (i.e., data that will be temperature managed).

[0168] In operation S710, the host device 310 can access and manage the write management table 331 based on the address to which the target data will be written. For example, the host device 310 can obtain a first temperature of the memory device 320 before starting a previous (or earlier) write operation for the memory region of the memory device 324 corresponding to the address range to which the corresponding address belongs, based on the identification result. The host device 310 can obtain the current temperature of the memory device 320 before starting the write operation for the target data from the temperature sensor 340. The current temperature can be based on the time point at which the host device 310 generates the write command. The host device 310 can compare the first temperature obtained from the write management table 331 with the current temperature obtained from the temperature sensor 340, and can manage the write management table 331 based on the comparison result.

[0169] In operation of S720, host device 310 can send write commands, addresses and target data to storage device 320.

[0170] In operation S730, storage device 320 can write target data to the storage device in response to a write command.

[0171] Figure 21 This is a flowchart describing a method for reading target data using a host device 310 and a storage device 320 according to an example embodiment.

[0172] Reference Figure 21 In operation S800, the host device 310 can identify that the data is target data (i.e., data that will be temperature managed).

[0173] In operation S810, the host device 310 may obtain the most recent first temperature from the write management table based on the address of the target data to be read. The most recent first temperature may correspond to the first temperature of the memory device 320 before the start of the previous (or earlier) write operation for the memory region of the memory device 324 corresponding to the address range to which the corresponding address belongs.

[0174] In operation S820, the host device 310 can obtain a read offset from the read offset table 332 based on the most recent first temperature and the current second temperature. For example, the host device 310 can obtain the current second temperature of the storage device 320 before the read operation for the target data begins from the temperature sensor 340. The current second temperature can be based on the time point at which the host device 310 generates the read command. The host device 310 can access the read offset table 332 to obtain a read offset mapped to a first temperature range to which the most recent first temperature belongs and a second temperature range to which the current second temperature belongs.

[0175] In operation S830, the host device 310 can send a read command, read offset, and address to the storage device 320.

[0176] In operation S840, storage device 320 can read target data from the memory device based on a read offset in response to a read command. For example, storage device 320 can change the read voltage based on the read offset, and can read the target data based on the changed read voltage.

[0177] Figure 22 It is used to describe Figure 19 A block diagram illustrating an example implementation of the host device 310.

[0178] Reference Figure 22 The host device 310 may include a data management circuit 311, and the data management circuit 311 may include a tag generation circuit 311_1, a thermal control circuit 311_2, a first table update circuit 311_3, and a second table update circuit 311_4.

[0179] In one example embodiment, tag generation circuit 311_1 can generate tags included in commands for controlling memory operations of storage device 320. The tags can indicate that the data requested to be written or read is target data. Furthermore, tag generation circuit 311_1 can manage the read offset that will be sent to storage device 320 along with the read command.

[0180] In one example embodiment, the thermal control circuit 311_2 can control the thermal management system 360 such that the current temperature of the storage device 320 can be overwritten by a read offset table. For example, when memory operation of the storage device 320 is required, the thermal control circuit 311_2 can determine whether the current temperature of the storage device 320 is overwritten by the read offset table, and can control the thermal management system 360 such that the current temperature of the storage device 320 is adjusted when the thermal control circuit 311_2 determines that the current temperature of the storage device 320 is not overwritten by the read offset table.

[0181] In one example embodiment, the first table update circuit 311_3 may update the management table 331 based on the above-described features.

[0182] In one example embodiment, the second table update circuit 311_4 may update the read offset table 332 based on the features described above. For example, the second table update circuit 311_4 may be combined with the storage device 320 to update the read offset table 332.

[0183] Figure 23 This is a schematic diagram illustrating an autonomous vehicle 1000 according to an example embodiment.

[0184] Reference Figure 23 The autonomous vehicle 1000 may include a first ZCU to a third ZCU 1011, 1012 and 1013, a storage device 1020, a central ZCU 1030, a first sensor to a third sensor 1041A, 1042A and 1043A, a first actuator to a third actuator 1041B, 1042B and 1043B and a switch circuit 1050.

[0185] In one example embodiment, a first ZCU 1011 may be arranged at a first location of the autonomous vehicle 1000 to control a first sensor 1041A and a first actuator 1041B adjacent to it. The first ZCU 1011 can be connected to the first sensor 1041A and the first actuator 1041B via a wired link or a wireless link. A second ZCU 1012 may be arranged at a second location of the autonomous vehicle 1000 to control a second sensor 1042A and a second actuator 1042B adjacent to it. The second ZCU 1012 can be connected to the second sensor 1042A and the second actuator 1042B via a wired link or a wireless link. A third ZCU 1013 may be arranged at a third location of the autonomous vehicle 1000 to control a third sensor 1043A and a third actuator 1043B adjacent to it. The third ZCU 1013 can be connected to the third sensor 1043A and the third actuator 1043B via a wired link or a wireless link. The first to third ZCUs 1011, 1012 and 1013 can support all functions in a local sub-region of the autonomous vehicle 1000. For example, the first to third ZCUs 1011, 1012 and 1013 can perform control, data processing and data management on the first to third sensors 1041A, 1042A and 1043A and the first to third actuators 1041B, 1042B and 1043B adjacent to them at specific locations of the autonomous vehicle 1000.

[0186] In one example embodiment, the central ZCU 1030 can be connected to the first through third ZCUs 1011, 1012, and 1013 via a wireless or wired link through a switch circuit 1050 to perform overall control and management operations on the first through third ZCUs 1011, 1012, and 1013. In some example embodiments, the central ZCU 1030 may be implemented to support functions such as advanced driver assistance systems (ADAS) or in-vehicle infotainment (IVI).

[0187] In one example embodiment, storage device 1020 can be connected via a switch circuit 1050 to first to third ZCUs 1011, 1012, and 1013 and central ZCU 1030 via a wireless or wired link to store and manage data generated by the first to third ZCUs 1011, 1012, and 1013 and central ZCU 1030. In this way, storage device 1020 can be implemented as an electrical and electronic (E&E) architecture shared by the first to third ZCUs 1011, 1012, and 1013 and central ZCU 1030. Based on the above example embodiment, storage device 1020, first to third ZCUs 1011, 1012, and 1013, and central ZCU 103 can perform memory operations in combination based on temperature information about the target data. Furthermore, the system memory used in the above example can be accessed by storage device 1020, first ZCU to third ZCU 1011, 1012 and 1013 and central ZCU 1030.

[0188] In one example embodiment, the switch circuit 1050 may include multiple switches, and unimpeded communication (i.e., signals can be transmitted with high integrity and minimal signal loss and distortion) can be supported between the first ZCUs to the third ZCUs 1011, 1012, and 1013, the central ZCU 1030, and the storage device 1020 by controlling the multiple switches. In some example embodiments, the switch circuit 1050 may be implemented as including an Ethernet switch, in which the first ZCUs to the third ZCUs 1011, 1012, and 1013, the central ZCU 1030, and the storage device 1020 can be connected to each other via Ethernet links.

[0189] In one example embodiment, the autonomous vehicle 1000 may support vehicle communication network technology, and the first to third ZCUs 1011, 1012, and 1013, storage device 1020, central ZCU 1030, first to third sensors 1041A, 1042A, and 1043A, and first to third actuators 1041B, 1042B, and 1043B may communicate with each other based on vehicle communication network technology. For example, vehicle communication network technology may include at least one of Controller Area Network (CAN), Local Interconnect Network (LIN), Vehicle Ethernet, FlexRay, and Media-Oriented System Transport (MOST).

[0190] For example, the first to third sensors 1041A, 1042A and 1043A may include at least one of the following: an inertial navigation unit (IMU) sensor, a collision sensor, a wheel sensor, a speed sensor, a tilt sensor, a weight sensor, a heading sensor, a position module, a vehicle forward / reverse sensor, a battery sensor, a fuel sensor, a tire sensor, a steering sensor that rotates via a steering wheel, a vehicle interior temperature sensor, a vehicle interior humidity sensor, an ultrasonic sensor, an illuminance sensor, an accelerator pedal position sensor and a brake pedal position sensor.

[0191] In one example embodiment, the first to third actuators 1041B, 1042B and 1043B may include at least one of a braking device (e.g., an anti-lock braking system (ABS)), a vehicle stability control device (e.g., an electronic stability control (ESC)), a steering device (e.g., electric (motor) power steering (DPS)), an active airbag device and a seat belt device.

[0192] However, Figure 23 The autonomous vehicle 1000 disclosed herein is merely an example embodiment and is not limited thereto. It may also include a ZCU, sensors, or actuators, and the arrangement of the ZCU, sensors, and actuators may vary.

[0193] In some example embodiments, according to the example embodiments, by Figure 1 , Figure 2A , Figure 12 , Figure 18A , Figure 18B , Figure 19 , Figure 22 and Figure 23Each component represented by a box shown can be implemented as a variety of hardware and / or firmware structures that perform the corresponding functions described above. For example, at least one of these components may include various hardware components that can perform the corresponding functions under the control of one or more microprocessors or other control devices. These hardware components include digital circuits, programmable or non-programmable logic devices or arrays, application-specific integrated circuits (ASICs), transistors, capacitors, logic gates, or other circuits using direct circuit structures (such as memory, processors, logic circuits, lookup tables, etc.). Furthermore, at least one of these components may also include a processor (such as a central processing unit (CPU) performing the corresponding functions), a microprocessor, etc., or may be implemented by a processor (such as a central processing unit (CPU) performing the corresponding functions), a microprocessor, etc. The functional aspects of the example embodiments may be implemented in algorithms executed on one or more processors. Furthermore, components, elements, modules, or units represented by blocks or processing steps may employ any number of related techniques for electronic configuration, signal processing and / or control, data processing, etc.

[0194] While aspects of exemplary embodiments have been specifically shown and described, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the appended claims.

Claims

1. A storage device, comprising: A memory device, including a memory cell array, the memory cell array including a plurality of memory cells; as well as The memory controller is configured to, in response to a read command from a host device including a tag indicating that the first data is target data to be temperature managed, obtain a read offset from a read offset table based on first temperature information corresponding to the first data, change an initial read voltage to a read voltage based on the read offset, and read the first data from the memory device using the read voltage.

2. The storage device as claimed in claim 1, wherein, The tag includes: a bit at a location specified by the memory standard among the bits contained in the read command.

3. The storage device as claimed in claim 1, wherein, The label also indicates the temperature range of the storage device, including the temperature prior to the start of the first data read operation.

4. The storage device as claimed in claim 1, wherein, The first temperature information includes: The first temperature of the storage device prior to initiating a previous write operation on the memory region corresponding to the address range including the first data; and The second temperature of the storage device prior to the commencement of the first data read operation.

5. The storage device as claimed in claim 4, wherein, The read offset is identified based on a first temperature range including a first temperature, a second temperature range including a second temperature, and the difference between the first temperature range and the second temperature range.

6. The storage device as claimed in claim 4, wherein, The read offset table includes multiple read offsets mapped to multiple first temperature ranges and multiple second temperature ranges.

7. The storage device as claimed in claim 6, wherein, The memory controller is also configured to monitor the operation of the storage device when operating in a specific temperature environment not covered by the read offset table to obtain monitoring results, and to add a new read offset corresponding to the specific temperature environment to the read offset table based on the monitoring results.

8. The storage device as claimed in claim 4, wherein, The read offset table includes multiple first read offsets mapped to portions of multiple first temperature ranges and multiple second temperature ranges.

9. The storage device as claimed in claim 8, wherein, The portion of the plurality of first temperature ranges and the portion of the plurality of second temperature ranges are determined based on the operating environment of the storage device.

10. The storage device of claim 8, wherein, The memory controller is also configured to update the read offset table by mapping a plurality of second read offsets to the remainders of the plurality of first temperature ranges and the remainders of the plurality of second temperature ranges.

11. The storage device as claimed in claim 8, wherein, The memory controller is also configured to send management requests to the host device to control the change of a second temperature of the storage device to within the plurality of second temperature ranges.

12. The storage device of claim 1, wherein, The plurality of memory units include: The first memory unit is configured to operate as one of a multi-level unit, a three-level unit, and a four-level unit to store target data; and The second memory unit is configured to operate as a single-level unit to store conventional data, including driving data.

13. The storage device as claimed in claim 1, wherein, The memory controller is also configured to write the second data to the memory device in response to a write command including a tag indicating that the second data is target data, and The memory controller is also configured to manage write management tables based on tags and addresses.

14. The storage device of claim 13, wherein, The memory controller is also configured to: obtain a first temperature of the storage device prior to initiating a previous write operation for a memory region corresponding to an address range including the address from a write management table, and manage the write management table based on a comparison of the temperature of the storage device prior to initiating a write operation for the second data with the first temperature.

15. The storage device of claim 13, wherein, The memory controller is also configured to send a thermal management request to the host device to control the temperature of the storage device, and to initiate a write operation for second data based on the current temperature being overwritten by the read offset table.

16. The storage device of claim 1, wherein, The memory controller is also configured to perform read recovery based on a failure to read the first data, and to update the read offset table based on the read recovery result.

17. An electronic device comprising: The host unit is configured to process data used to control vehicle driving; System memory, allocated to the host device and configured to load and read the offset table; as well as The storage device is configured to perform memory operations based on commands received from the host device. The host device is further configured to: obtain a read offset from a read offset table based on the first temperature information corresponding to the first data to be temperature managed, and send a read command, a read offset, and a first address of the first data to the storage device.

18. The electronic device of claim 17, wherein, The host device is also configured to identify, based on the file header of the data corresponding to the first data, that the first data will be subject to temperature management.

19. A storage device, comprising: A memory device, including a memory cell array, the memory cell array including a plurality of memory cells; as well as The memory controller is configured to control the memory device to perform one of a write operation and a read operation on the data based on temperature information corresponding to the data to be temperature managed.

20. The storage device of claim 19, wherein, The memory controller is also configured to identify, based on specific bits of a command received from the host device, that the data will be subject to temperature management.

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