A high-power audio power amplifier
By employing silicon carbide switching transistors and optimizing circuit design in the audio power amplifier, the problems of complex structure and high cost in traditional designs are solved, achieving efficient and stable high-power output and improved audio quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FOSHAN OUSEN AUDIO CO LTD
- Filing Date
- 2026-04-09
- Publication Date
- 2026-06-05
AI Technical Summary
Existing audio power amplifiers are difficult to design and have high production costs. Traditional silicon-based power switches require multiple transistors to be connected in parallel for high power output, resulting in complex structures, difficult heat dissipation, and high costs.
By replacing traditional silicon-based switching transistors with silicon carbide switching transistors, and combining them with PFC power modules and DC-DC power modules, the high voltage withstand rating and high switching speed of silicon carbide switching transistors are utilized to optimize circuit design and achieve efficient and stable high-power output.
It increases the power limit, improves audio quality, reduces switching losses, enhances system efficiency and power density, ensures long-term operational reliability, and achieves high-efficiency, high-power output within a compact size.
Smart Images
Figure CN122159809A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of audio power amplifier technology, and more specifically to a high-power audio power amplifier. Background Technology
[0002] An audio power amplifier is an electronic device that reconstructs an input audio signal at the output element. The reconstructed signal must have ideal volume and power levels to achieve accurate reproduction, efficient output, and low distortion. The frequency range of audio signals is approximately 20Hz to 20kHz, therefore, an audio power amplifier needs to have good frequency response within this range. If driving bandwidth-limited speakers (such as woofers and tweeters), it can be adapted to meet their corresponding narrow bandwidth requirements.
[0003] Depending on the application scenario, the output power of audio power amplifiers varies significantly: from the milliwatt level power required to drive headphones, to the several watt level power for TV and computer audio, to the tens of watt level power for mini home stereo systems and car audio systems, and even the hundreds of watts or more power required for home and commercial audio systems. Some high-end scenarios (such as cinemas and auditoriums) even require kilowatt-level high-power amplifiers to meet the sound requirements of the entire venue.
[0004] Traditional digital power amplifiers often use silicon-based power switching transistors as their core power devices. For example, the core of the "Silicon Power Amplifier Module Circuit" disclosed in Chinese patent document CN201393205Y is a silicon-based switching transistor. Existing silicon-based MOSFETs typically have a voltage rating of up to 600V-900V. When achieving ultra-high power outputs such as kilowatts, current technologies often use multiple transistors connected in parallel to increase current carrying capacity. However, this design not only leads to a complex overall amplifier structure but also places extremely high demands on the heat dissipation module, significantly increasing the design difficulty, size, and cost of the product, making it difficult to achieve efficient and stable applications of high-power amplifiers. Summary of the Invention
[0005] The present invention aims to solve the problems of high design difficulty and high production cost of existing audio power amplifiers.
[0006] To achieve the above objectives, the present invention provides a high-power audio power amplifier, including a housing and a power board, a front-end board and a power amplifier board disposed inside the housing; The power board includes a PFC power module and a DC-DC power module, which work together to provide DC output to the front panel and the power amplifier board. The front panel is used for power amplification preprocessing and PWM modulation. The power amplifier board includes a first gate driver chip, a first resistor, a first discharge section, a first silicon carbide switch, a second gate driver chip, a second silicon carbide switch, a second resistor, a second discharge section, and a first filter unit. The first gate driver chip and the second gate driver chip are both connected to the front panel. The drain of the first silicon carbide switch is connected to the power board to access the positive DC bus voltage. The source of the transistor is connected to the first filter unit. The two ends of the first resistor are respectively connected to the first gate driver chip and the gate of the first silicon carbide switch. The positive terminal of the first discharge portion is connected to the gate of the first silicon carbide switch, and the negative terminal is connected to the first gate driver chip. The source of the second silicon carbide switch is connected to the power board to access the negative DC bus voltage. The drain of the second silicon carbide switch is connected to the first filter unit. The two ends of the second resistor are respectively connected to the second gate driver chip and the gate of the second silicon carbide switch. The positive terminal of the second discharge portion is connected to the gate of the second silicon carbide switch, and the negative terminal is connected to the second gate driver chip.
[0007] Preferably, the first discharge section includes a third resistor and a first diode connected in series, the positive terminal of the first diode is connected to the first end of the third resistor, the negative terminal is connected to the first gate driver chip, and the second end of the third resistor is connected to the gate of the first silicon carbide switch.
[0008] Preferably, the second discharge section includes a fourth resistor and a second diode connected in series. The positive terminal of the second diode is connected to the first end of the fourth resistor, and the negative terminal is connected to the second gate driver chip. The second end of the fourth resistor is connected to the gate of the second silicon carbide switch.
[0009] Preferably, a first connection node is formed at the connection between the source of the first silicon carbide switching transistor and the drain of the second silicon carbide switching transistor. The first filter unit includes a first capacitor, a second capacitor, a third capacitor, a fifth resistor, and a first inductor. One end of the first capacitor, the second capacitor, the fifth resistor, and the first inductor are all connected to the first connection node. The other end of the first capacitor and the second capacitor are connected to the ground terminal. The other end of the fifth resistor is connected to the third capacitor. The other end of the third capacitor is connected to the ground terminal. The other end of the first inductor is the output terminal.
[0010] Preferably, a second filtering unit is provided between the front panel and the first gate driving chip, and a third filtering unit is provided between the front panel and the second gate driving chip.
[0011] Preferably, the power amplifier board further includes a first protection circuit and a second protection circuit, wherein the first protection circuit is connected in parallel with the first silicon carbide switching transistor, and the second protection circuit is connected in parallel with the second silicon carbide switching transistor.
[0012] Preferably, the PFC power module includes a third silicon carbide switching transistor.
[0013] Preferably, the DC-DC power module includes a transformer and a fourth silicon carbide switching transistor, a fifth silicon carbide switching transistor, a sixth silicon carbide switching transistor, and a seventh silicon carbide switching transistor.
[0014] Preferably, the power amplifier board includes a first heat sink, and the heat dissipation surfaces of the first silicon carbide switching transistor and the second silicon carbide switching transistor are both attached to the first heat sink.
[0015] Preferably, the front and rear sections of the housing are provided with heat dissipation holes, and the housing is provided with at least one cooling fan, the cooling fan being positioned corresponding to the heat dissipation holes.
[0016] The beneficial effects of the high-power audio power amplifier involved in this invention are as follows: It uses silicon carbide (SiC) switching transistors instead of traditional silicon-based switching transistors. SiC switching transistors have higher voltage ratings and can directly support higher bus voltages, thus significantly increasing the power limit. Simultaneously, their switching speed is significantly faster, allowing the power amplifier to use higher frequency PWM carriers, improving audio quality and increasing system efficiency due to reduced switching losses. Furthermore, SiC switching transistors have lower on-resistance, higher thermal conductivity, and stronger high-temperature operating stability. While reducing losses and optimizing heat dissipation, they also improve the power density and long-term operating reliability of the power amplifier, ultimately achieving safe and efficient output of greater power within a more compact volume. Attached Figure Description
[0017] Figure 1 This is a schematic diagram of the structure of a high-power audio power amplifier according to the present invention. Figure 1 ; Figure 2 This is a schematic diagram of the structure of a high-power audio power amplifier according to the present invention. Figure 2 ; Figure 3 This is a schematic diagram of the internal structure of a high-power audio power amplifier involved in this invention; Figure 4 This is a circuit diagram of the power amplifier board in a high-power audio power amplifier according to the present invention. Figure 5 This is a circuit diagram of the PFC power supply module in a high-power audio power amplifier according to the present invention. Figure 6 This is a circuit diagram of the DC-DC power supply module in a high-power audio power amplifier according to the present invention. Detailed Implementation
[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0019] It should be noted that when a component is referred to as "fixed to" or "set on" another component, it can be directly on the other component or there may be an intervening component at the same time; when a component is referred to as "connected to" another component, it can be directly connected to the other component or there may be an intervening component at the same time.
[0020] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0021] In the description of the embodiments of the present invention, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", and "outer" is based on the orientation or positional relationship shown in the accompanying drawings and is only for the purpose of facilitating the description of the embodiments of the present invention and simplifying the description. It is not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.
[0022] To more clearly illustrate the technical solution of the present invention, a preferred embodiment is provided below for reference. Figures 1-6 A high-power audio power amplifier includes a housing 1 and a power board 2, a front board 3 and a power amplifier board 4 disposed inside the housing 1. Power board 2 includes a PFC power module and a DC-DC power module. The PFC power module and the DC-DC power module work together to provide DC output to the front board 3 and the power amplifier board 4. The front board 3 is used for power amplification preprocessing and PWM modulation. The power amplifier board 4 includes a first gate driver chip U10, a first resistor R38, a first discharge section, a first silicon carbide switch Q2, a second gate driver chip U14, a second silicon carbide switch Q4, a second resistor R32, a second discharge section, and a first filter unit. The first gate driver chip U10 and the second gate driver chip U14 are both connected to the front board 3. The drain of the first silicon carbide switch Q2 is connected to the power board 2 to access the positive DC bus voltage +VP. The source of switch Q2 is connected to the first filter unit. The two ends of the first resistor R38 are connected to the first gate driver chip U10 and the gate of the first silicon carbide switch Q2, respectively. The positive terminal of the first discharge section is connected to the gate of the first silicon carbide switch Q2, and the negative terminal is connected to the first gate driver chip U10. The source of the second silicon carbide switch Q4 is connected to the power board 2 to connect to the negative DC bus voltage -VN. The drain of the second silicon carbide switch Q4 is connected to the first filter unit. The two ends of the second resistor R32 are connected to the gate of the second gate driver chip U14 and the gate of the second silicon carbide switch Q4, respectively. The positive terminal of the second discharge section is connected to the gate of the second silicon carbide switch Q4, and the negative terminal is connected to the second gate driver chip U14.
[0023] When the audio power amplifier involved in this invention is used, the power board 2 provides power to the entire circuit. The PFC power module, as the first stage, performs "power factor correction" on the input AC mains power, reducing harmonic interference to the power grid and outputting a stable high-voltage DC power. The DC-DC power module, as the second stage, converts the high-voltage DC power output from the PFC power module into multiple stable DC power supplies to power the preamplifier board 3 and the power amplifier board 4, preparing for the final power amplification. After receiving power, the preamplifier board 3 first receives the input audio signal and preprocesses it to modulate it into control signals PWM+ and PWM-. The first gate driver chip U10 receives the control signal PWM+, converts it into a gate drive signal, and sends it to the first silicon carbide switch Q2. The second gate driver chip U14 receives the control signal PWM-, converts it into a gate drive signal, and sends it to the second silicon carbide switch Q4. During this process, the first resistor R38 and the second resistor R32 adjust the turn-on and turn-off rates of the corresponding silicon carbide switches respectively, suppressing the drive loop. The high-frequency oscillation is controlled, and the transient drive current is limited, thereby optimizing the high-speed switching characteristics of the silicon carbide switching transistor and ensuring its operation in a highly efficient and stable state. The control signals PWM+ and PWM- are complementary signals. When PWM+ is high, the first silicon carbide switching transistor Q2 is turned on, and at this time, PWM- is low, and the second silicon carbide switching transistor Q4 is turned off. When PWM+ is low, the first silicon carbide switching transistor Q2 is turned off, and at this time, PWM- is high, and the second silicon carbide switching transistor Q4 is turned on, and the first silicon carbide switching transistor is turned off and the second silicon carbide switching transistor Q4 is turned off. The transistor Q4 alternately switches at an extremely high frequency to convert the constant positive and negative DC bus voltages into a high-frequency PWM power square wave. This high-frequency PWM power square wave is filtered by the first filter unit to remove the high-frequency carrier component, retaining only the envelope signal of the audio signal. The smoothed and restored high-power analog audio signal is output to the speaker terminal to drive the speaker to produce sound. When the first silicon carbide switch Q2 is turned off, it achieves rapid discharge through the first discharge section. When the second silicon carbide switch Q4 is turned off, it achieves rapid discharge through the second discharge section, thereby ensuring the stability of the entire circuit. Compared with existing technologies, this solution differs in that it uses silicon carbide (SiC) switching transistors instead of traditional silicon-based switching transistors. SiC switching transistors have higher voltage ratings and can directly support higher bus voltages, thus significantly increasing the power limit. At the same time, their switching speed is significantly faster, allowing the power amplifier to use higher frequency PWM carriers, improving audio quality, and also increasing system efficiency due to reduced switching losses. In addition, SiC switching transistors have lower on-resistance, higher thermal conductivity, and stronger high-temperature operating stability. While reducing losses and optimizing heat dissipation, they also improve the power density and long-term reliability of the power amplifier, ultimately achieving safe and efficient output of greater power in a more compact size.
[0024] In this embodiment, the first discharge section includes a third resistor R17 and a first diode D1 connected in series. The positive terminal of the first diode D1 is connected to the first end of the third resistor R17, and the negative terminal is connected to the first gate driver chip U10. The second end of the third resistor R17 is connected to the gate of the first silicon carbide switch Q2. The first discharge section composed of the third resistor R17 and the first diode D1 can quickly discharge the parasitic charge on the gate when the first silicon carbide switch Q2 is turned off, and strongly clamp the gate voltage at a negative voltage, thereby effectively preventing transient false turn-on caused by the Miller effect, and greatly enhancing the working reliability of the silicon carbide power switch under high voltage and high frequency conditions.
[0025] In this embodiment, the second discharge section includes a fourth resistor R12 and a second diode D2 connected in series. The positive terminal of the second diode D2 is connected to the first end of the fourth resistor R12, and the negative terminal is connected to the second gate driver chip U14. The second end of the fourth resistor R12 is connected to the gate of the second silicon carbide switch Q4. The second discharge section has the same effect as the first discharge section, and will not be described in detail here.
[0026] In this embodiment, the connection between the source of the first silicon carbide switch Q2 and the drain of the second silicon carbide switch Q4 forms a first connection node. The first filter unit includes a first capacitor C56, a second capacitor C55, a third capacitor C67, a fifth resistor R64, and a first inductor L5. One end of each of the first capacitors C56, C55, R64, and L5 is connected to the first connection node. The other ends of the first and second capacitors C56 and C55 are connected to ground. The other end of the fifth resistor R64 is connected to the third capacitor C67, and the other end of the third capacitor C67 is connected to ground. The other end of the first inductor L5 is the output terminal. The first inductor L5 is used to filter out the high-frequency PWM carrier wave. The first capacitors C56, C55, and C67 are used to completely short-circuit the participating high-frequency ripple to ground. The fifth resistor R64 is used to suppress the inherent resonance peak of the LC circuit near the cutoff frequency, ensuring a flat frequency response and system stability.
[0027] In this embodiment, a second filtering unit is provided between the front panel 3 and the first gate driver chip U10. The second filtering unit includes a sixth resistor R16 and a fourth capacitor C38. One end of the sixth resistor R16 is connected to the front panel 3, and the other end is connected to the first gate driver chip U10. One end of the fourth capacitor C38 is connected to the first gate driver chip U10, and the other end is connected to the ground terminal. The sixth resistor R16 limits the current and protects the chip, while also suppressing high-frequency ringing or overshoot that may occur on the PWM signal line, making the input signal cleaner. The fourth capacitor C38 can absorb and filter out high-frequency glitches, noise, or electromagnetic interference that may exist on the signal line.
[0028] In this embodiment, a third filtering unit is provided between the front panel 3 and the second gate driver chip U14. The third filtering unit includes a seventh resistor R6 and a fifth capacitor C32. One end of the seventh resistor R6 is connected to the front panel 3, and the other end is connected to the second gate driver chip U14. One end of the fifth capacitor C32 is connected to the second gate driver chip U14, and the other end is connected to the ground terminal. The third filtering unit has the same effect as the second filtering unit, and will not be described in detail here.
[0029] In this embodiment, the power amplifier board 4 further includes a first protection circuit and a second protection circuit. The first protection circuit is connected in parallel with the first silicon carbide switching transistor Q2, and the second protection circuit is connected in parallel with the second silicon carbide switching transistor Q4. The first protection circuit consists of an eighth resistor R21 and a sixth capacitor C128, and the second protection circuit consists of a ninth resistor R13 and a fifteenth capacitor C125. The main purpose of the first and second protection circuits is to suppress high-frequency oscillations while avoiding excessive increase in drive power consumption.
[0030] In this embodiment, the power amplifier board 4 further includes a seventh capacitor C58, an eighth capacitor C120, a ninth capacitor C45, and a tenth capacitor C109. One end of the seventh capacitor C58 and one end of the eighth capacitor C120 are both connected to the first gate driver chip U10, and the other ends of the seventh capacitor C58 and the eighth capacitor C120 are both connected to the ground terminal. One end of the ninth capacitor C45 and one end of the tenth capacitor C109 are both connected to the second gate driver chip U14, and the other ends of the ninth capacitor C45 and the tenth capacitor C109 are both connected to the ground terminal.
[0031] In this embodiment, the seventh capacitor C58, the eighth capacitor C120 and the first gate driver chip U10 form a second connection node, which is also connected to the +18V power supply terminal; the ninth capacitor C45, the tenth capacitor C109 and the second gate driver chip U14 form a third connection node, which is also connected to the +18V power supply terminal.
[0032] In this embodiment, the power amplifier board 4 further includes a tenth resistor R41 and an eleventh resistor R40. One end of the tenth resistor R41 is connected to the gate of the first silicon carbide switching transistor Q2, and the other end is connected to the ground terminal. One end of the eleventh resistor R40 is connected to the gate of the second silicon carbide switching transistor Q4, and the other end is connected to the ground terminal. The tenth resistor R41 and the eleventh resistor R40 are bleeder resistors to prevent electrostatic discharge or induced voltage from damaging the silicon carbide switching transistors.
[0033] In this embodiment, the power amplifier board 4 further includes a twelfth resistor R45, a thirteenth resistor R44, an eleventh capacitor C126, and a twelfth capacitor C123. One end of the twelfth resistor R45 is connected to the gate of the first silicon carbide switch Q2, and the other end is connected to the eleventh capacitor C126. The other end of the eleventh capacitor C126 is connected to ground. One end of the thirteenth resistor R44 is connected to the gate of the second silicon carbide switch Q4, and the other end is connected to the twelfth capacitor C123. The other end of the twelfth capacitor C123 is connected to ground. The series circuits formed by the twelfth resistor R45 and the eleventh capacitor C126, as well as the series circuits formed by the thirteenth resistor R44 and the twelfth capacitor C123, both serve to suppress high-frequency oscillations and avoid excessive increases in drive power consumption.
[0034] In this embodiment, the PFC power module includes a PFC power chip U2, a third silicon carbide switch Q106, a third diode D3, a thirteenth capacitor C1, a second inductor L2, and an AC input module A. One end of the second inductor L2 is connected to the AC input module A, and the other end is connected to the drain of the third silicon carbide switch Q106. The gate of the third silicon carbide switch Q106 is connected to the PFC power chip U2, and the source of the third silicon carbide switch Q106 is connected to the ground terminal. The anode of the third diode D3 is connected to the drain of the third silicon carbide switch Q106, and the cathode of the third diode D3 is connected to the DC bus voltage output terminal. One end of the thirteenth capacitor C1 is connected to the ground terminal, and the other end is connected to the DC bus voltage output terminal. Other components between the third silicon carbide switch Q106 and the ground terminal, and other components between the PFC power chip U2 and the ground terminal, can refer to the structure in the power amplifier board 3, and will not be described in detail here.
[0035] In this embodiment, the DC-DC power module includes a fourteenth capacitor C48, a transformer TM1, a fourth silicon carbide switch Q88, a fifth silicon carbide switch Q100, a sixth silicon carbide switch Q99, and a seventh silicon carbide switch Q111. The drains of the fourth silicon carbide switch Q88 and the fifth silicon carbide switch Q100 are both connected to the DC bus voltage input terminal. The sources of the sixth silicon carbide switch Q99 and the seventh silicon carbide switch Q111 are both connected to the ground terminal. The sources of the fourth silicon carbide switch Q88 and the drains of the sixth silicon carbide switch Q99 are both connected to the transformer TM1. The sources of the fifth silicon carbide switch Q100 and the drains of the seventh silicon carbide switch Q111 are both connected to one end of the fourteenth capacitor C48, and the other end of the fourteenth capacitor C48 is connected to the transformer TM1. The switching groups formed by the fourth silicon carbide switch Q88 and the seventh silicon carbide switch Q111, and the switching groups formed by the fifth silicon carbide switch Q100 and the sixth silicon carbide switch Q99, are alternately turned on, generating alternating positive and negative square wave voltages on the primary winding of transformer TM1, transferring energy to the secondary winding of transformer TM1. The fourth silicon carbide switch Q88, the fifth silicon carbide switch Q100, the sixth silicon carbide switch Q99, and the seventh silicon carbide switch Q111 are all connected to their respective chips via their gates.
[0036] The PFC power module outputs a high-voltage DC +VPFC. The DC-DC power module circuit takes this as its input, and after isolation and conversion, outputs the positive and negative DC bus voltages (+Vp, -VN) with higher amplitudes for use by the power amplifier board.
[0037] In this embodiment, the power amplifier board 4 includes a first heat sink 41, and the heat dissipation surfaces of the first silicon carbide switching transistor Q2 and the second silicon carbide switching transistor Q4 are both attached to the first heat sink 41.
[0038] In this embodiment, the power board 2 includes a second heat sink, and the heat dissipation surfaces of the third silicon carbide switching transistor Q106, the fourth silicon carbide switching transistor Q88, the fifth silicon carbide switching transistor Q100, the sixth silicon carbide switching transistor Q99, and the seventh silicon carbide switching transistor Q111 are all attached to the second heat sink.
[0039] In this embodiment, heat dissipation holes 11 are provided at both the front and rear sections of the casing 1, and at least one cooling fan 5 is provided inside the casing 1, with the cooling fan 5 corresponding to the position of the heat dissipation holes 11. The above description is only a preferred embodiment of the present invention, and its structure is not limited to the shapes listed above. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A high-power audio power amplifier, characterized in that, Includes the chassis and the power board, front panel, and power amplifier board located inside the chassis; The power board includes a PFC power module and a DC-DC power module, which work together to provide DC output to the front panel and the power amplifier board. The front-end board is used for power amplification preprocessing and PWM modulation; The power amplifier board includes a first gate driver chip, a first resistor, a first discharge section, a first silicon carbide switch, a second gate driver chip, a second silicon carbide switch, a second resistor, a second discharge section, and a first filter unit. The first gate driver chip and the second gate driver chip are both connected to the front panel. The drain of the first silicon carbide switch is connected to the power board to receive the positive DC bus voltage. The source of the first silicon carbide switch is connected to the first filter unit. The two ends of the first resistor are respectively connected to the gates of the first gate driver chip and the first silicon carbide switch. The positive terminal of the first discharge section is connected to the gate of the first silicon carbide switch, and the negative terminal is connected to the first gate driver chip. The source of the second silicon carbide switch is connected to the power board to receive the negative DC bus voltage. The drain of the second silicon carbide switch is connected to the first filter unit. The two ends of the second resistor are respectively connected to the gate of the second gate driver chip and the second silicon carbide switch. The positive terminal of the second discharge section is connected to the gate of the second silicon carbide switch, and the negative terminal is connected to the second gate driver chip. The power amplifier board also includes a first heat sink, wherein the heat dissipation surfaces of the first silicon carbide switching transistor and the second silicon carbide switching transistor are both attached to the first heat sink.
2. The high-power audio amplifier according to claim 1, characterized in that, The first discharge section includes a third resistor and a first diode connected in series. The positive terminal of the first diode is connected to the first end of the third resistor, and the negative terminal is connected to the first gate driver chip. The second end of the third resistor is connected to the gate of the first silicon carbide switch.
3. The high-power audio amplifier according to claim 1, characterized in that, The second discharge section includes a fourth resistor and a second diode connected in series. The positive terminal of the second diode is connected to the first end of the fourth resistor, and the negative terminal is connected to the second gate driver chip. The second end of the fourth resistor is connected to the gate of the second silicon carbide switch.
4. The high-power audio power amplifier according to claim 1, characterized in that, A first connection node is formed at the connection between the source of the first silicon carbide switching transistor and the drain of the second silicon carbide switching transistor. The first filter unit includes a first capacitor, a second capacitor, a third capacitor, a fifth resistor, and a first inductor. One end of the first capacitor, the second capacitor, the fifth resistor, and the first inductor are all connected to the first connection node. The other end of the first capacitor and the second capacitor are connected to the ground terminal. The other end of the fifth resistor is connected to the third capacitor. The other end of the third capacitor is connected to the ground terminal. The other end of the first inductor is the output terminal.
5. The high-power audio power amplifier according to claim 1, characterized in that, A second filtering unit is provided between the front panel and the first gate driver chip, and a third filtering unit is provided between the front panel and the second gate driver chip.
6. The high-power audio power amplifier according to claim 1, characterized in that, The power amplifier board also includes a first protection circuit and a second protection circuit. The first protection circuit is connected in parallel with the first silicon carbide switching transistor, and the second protection circuit is connected in parallel with the second silicon carbide switching transistor.
7. A high-power audio amplifier according to claim 1, characterized in that, The PFC power module includes a third silicon carbide switching transistor.
8. A high-power audio power amplifier according to claim 7, characterized in that, The DC-DC power module includes a transformer and a fourth, fifth, sixth, and seventh silicon carbide switching transistor.
9. A high-power audio power amplifier according to claim 8, characterized in that, The power board also includes a second heat sink, and the heat dissipation surfaces of the third, fourth, fifth, sixth, and seventh silicon carbide switching transistors are all attached to the second heat sink.
10. A high-power audio amplifier according to claim 1, characterized in that, The front and rear sections of the casing are provided with heat dissipation holes, and the casing is equipped with at least one cooling fan, the cooling fan being positioned corresponding to the heat dissipation holes.