Semiconductor device
By employing conductive patterns and gate electrode structures of varying horizontal heights in semiconductor devices, the problem of deteriorated dispersion properties caused by the reduction of minimum feature size was solved, thereby improving the performance and stability of the devices.
CN122161094APending Publication Date: 2026-06-05SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2025-12-01
- Publication Date
- 2026-06-05
AI Technical Summary
Technical Problem
As the minimum feature size of semiconductor devices decreases, the dispersion properties deteriorate, affecting device performance.
Method used
By employing conductive patterns and gate electrode structures with different horizontal heights, and by placing conductive patterns and gate electrodes between active patterns, parasitic capacitance is reduced and the performance of the unit transistor is improved.
Benefits of technology
By reducing parasitic capacitance, the performance and stability of semiconductor devices are improved, and the operating efficiency of memory cells is enhanced.
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Figure CN122161094A_ABST
Abstract
A semiconductor device includes: a first unit active pattern and a second unit active pattern adjacent to each other; a first gate electrode and a second gate electrode disposed between the first unit active pattern and the second unit active pattern and spaced apart from each other; a first gate dielectric layer between the first gate electrode and the first unit active pattern; a second gate dielectric layer between the second gate electrode and the second unit active pattern; and a first conductive pattern disposed between the first unit active pattern and the second unit active pattern, at least a portion of the first conductive pattern being disposed at a different level from the first gate electrode and the second gate electrode and spaced apart from the first gate electrode and the second gate electrode.
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