Method for manufacturing trench structure, semiconductor device and method for manufacturing the same
By combining a multi-layer mask layer structure and a protective layer, the problems of substrate damage and film peeling caused by the increase in mask layer thickness in deep trench structures are solved, and high-yield trench structure fabrication is achieved.
CN122161149APending Publication Date: 2026-06-05SHANGHAI OPTICAL COMMUNICATIONS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI OPTICAL COMMUNICATIONS CORP
- Filing Date
- 2024-12-04
- Publication Date
- 2026-06-05
Smart Images
Figure CN122161149A_ABST
Abstract
The application provides a trench structure preparation method, a semiconductor device and a preparation method thereof. In the trench structure preparation method, a protection layer is formed in the trench to protect the sidewall exposed by the first dielectric layer by using the protection layer, so that the first dielectric layer is prevented from being consumed in large quantity when the hard mask layer is removed, and the risk of film layer peeling of the second dielectric layer is reduced. On this basis, the thickness of the hard mask layer is increased to improve the blocking effect of etching ions, so that the problem of substrate damage caused by the entry of ions into the substrate in the etching process is improved, and the risk of film layer peeling is reduced while the substrate damage is improved.
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