A power module of a chip symmetrical double-sided heat dissipation packaging structure
CN122161443APending Publication Date: 2026-06-05TIANJIN POLYTECHNIC UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TIANJIN POLYTECHNIC UNIV
- Filing Date
- 2026-04-09
- Publication Date
- 2026-06-05
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Figure CN122161443A_ABST
Abstract
The application discloses a kind of chip symmetry formula double-sided heat dissipation package structure power module, belong to semiconductor packaging and power module technical field, including chip, lead, cushion block, positive power terminal, negative power terminal, output power terminal, AMB substrate and signal terminal, AMB substrate is set up in pairs, several cushion blocks are installed between two AMB substrates, several chips are respectively installed in upside AMB substrate bottom and downside AMB substrate top, positive power terminal is installed in downside AMB substrate top, negative power terminal is installed in upside AMB substrate bottom, output power terminal is installed in downside AMB substrate top, several signal terminals are respectively installed in upside AMB substrate bottom and downside AMB substrate top.Solve the problem that the heat dissipation area is limited due to the chip is arranged in the module with SiC device as the main power device in the prior art, and the thermal coupling effect between the parallel chips is obvious and the solder layer thermal stress is concentrated.Improve the long-term reliability of power module.
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