Semiconductor device

Abstract

The application discloses a semiconductor device, which comprises a plastic package body, a substrate, a driving-side pin frame, wherein the thickness dimension of the plastic package body in the vertical direction is L1, L1 satisfies the relationship: 4.5mm<=L1<=6.5mm; the upper surface of the plastic package body is provided with a first recess, the first recess projection covers at least part of the bootstrap chip projection, and the first recess projection covers at least part of the groove projection; the lower surface of the plastic package body is provided with a second recess, the second recess projection covers at least part of the groove projection, and the second recess projection is arranged on the side of the bootstrap chip projection which is away from the low-side driving pad projection in the horizontal direction. Thus, the vertical thickness of the plastic package body is large, L2 is greater than L3, the first recess does not cause dielectric breakdown of the bootstrap chip on the upper surface, and can increase the creepage distance from the driving-side pin frame to the heat sink, the second recess can improve the plastic package material filling property of the groove, and does not cause dielectric breakdown of the bootstrap chip on the lower surface.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Technology

[0002] Electronic control boards for devices such as air conditioners and washing machines can be equipped with semiconductor devices such as intelligent power blocks. However, existing intelligent power modules cannot meet the high voltage resistance requirements when miniaturized. The chips inside the intelligent power modules may experience dielectric breakdown at locations where the molding compound is thin. Furthermore, air bubbles or gaps may be generated in the molding compound during the molding process of miniaturized intelligent power modules, affecting the high voltage resistance and insulation properties of the molding compound. Summary of the Invention

[0003] The present invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one object of the present invention is to provide a semiconductor device that can withstand high voltage while being miniaturized, and can improve the filling properties of the encapsulation.

[0004] According to a semiconductor device of the present invention, the semiconductor device includes: a molding compound having a lateral direction, a longitudinal direction, and a vertical direction, the lateral direction, the longitudinal direction, and the vertical direction being perpendicular to each other; a substrate at least partially disposed within the molding compound, the substrate having power pads, the power pads including high-side power pads and low-side power pads spaced laterally, a high-side power chip disposed on the high-side power pads, and a low-side power chip disposed on the low-side power pads; and a drive-side pin frame at least partially disposed within the molding compound and spaced apart on the side of the substrate longitudinally away from the power-side pins, the drive-side pin frame having a drive-side ground pin and a high-side drive floating supply voltage pin, the drive-side ground pin having high-side drive pads spaced laterally. The system includes a low-side drive pad, on which a low-side drive chip is disposed, and a high-side drive pad, on which a high-side drive chip is disposed. The low-side drive chip and the low-side power chip are electrically connected, and the high-side drive chip and the high-side power chip are electrically connected. A bootstrap chip pad is disposed on the high-side drive floating power supply voltage pin, on which a bootstrap chip is disposed. The bootstrap chip and the drive chip are electrically connected. One vertical surface of the molding compound is the upper surface, which is vertically opposite to the power chip and / or the drive chip. The other vertical surface of the molding compound is the lower surface, which is vertically opposite to the side of the substrate away from the power chip. The vertical thickness of the molding compound is defined as L1, where L1 satisfies the relationship: 4.5mm ≤ L1 ≤ 6.5mm, the vertical distance between the side of the drive-side pin frame adjacent to the lower surface and the lower surface is L2, and the vertical distance between the side of the drive-side pin frame adjacent to the upper surface and the upper surface is L3. L2 and L3 satisfy the relationship: L2 > L3; the molding compound has a groove on the side adjacent to the high-side drive pad in the lateral direction. The groove is recessed on the side facing the high-side drive pad in the lateral direction. The drive-side ground pin extends in the lateral direction and one end at least partially extends out of the molding compound and into the groove; the lower surface of the molding compound has a first recess, which is recessed in the vertical direction towards the upper surface. The first recess is located adjacent to the side of the molding compound close to the drive-side pin frame in the longitudinal direction. The first recess is set to be positively projected in the vertical direction. The projection of the first recess is defined as follows: the vertical projection of the bootstrap chip is defined as the bootstrap chip projection; the vertical projection of the groove is defined as the groove projection; the first recess projection covers at least a portion of the bootstrap chip projection; and the first recess projection at least partially covers the groove projection. A second recess is provided on the upper surface of the molding compound. The second recess is recessed vertically toward the lower surface. The second recess is located adjacent to the side of the molding compound that is laterally closer to the high-side drive pad. The vertical projection of the second recess is defined as the second recess projection; the vertical projection of the low-side drive pad is defined as the low-side drive pad projection; the second recess projection at least partially covers the groove projection; and the second recess projection is spaced apart from the side of the bootstrap chip projection that is laterally away from the low-side drive pad projection.

[0005] The specific advantages or beneficial effects of the above scheme are as follows: The vertical thickness of the molding compound is relatively large, and the vertical distance L2 between the side of the driver-side pin frame adjacent to the upper surface and the upper surface is greater than the vertical distance L3 between the side of the driver-side pin frame adjacent to the lower surface and the lower surface. The setting of the first recess not only prevents the bootstrap chip from breaking down from the upper surface dielectric under high withstand voltage, but also increases the creepage distance from the driver-side pin frame to the heat sink. The setting of the second recess not only improves the filling performance of the molding compound at the recess position, but also, due to the distance from the bootstrap chip, prevents the bootstrap chip from breaking down from the lower surface dielectric under high withstand voltage.

[0006] In some examples of the present invention, the first recess includes a first recessed segment and a second recessed segment. The first recessed segment extends laterally, and the second recessed segment connects to both ends of the first recessed segment and extends longitudinally toward one side of the substrate. There are three high-side drive floating power supply voltage pins, which are spaced apart laterally. The three high-side drive floating power supply voltage pins are spaced apart on the side of the high-side drive pad that is longitudinally away from the substrate. The three high-side drive floating power supply voltage pins are all spaced apart from the low-side drive pad in the longitudinal direction. The orthographic projection of the first recessed segment in the vertical direction covers at least a portion of the projection of the three bootstrap chips. The orthographic projection of the one of the two second recessed segments adjacent to the high-side drive pad in the vertical direction covers the recess projection.

[0007] In some examples of the present invention, the lower surface includes a first plane and a first concave surface, the vertical distance between the side of the drive-side pin frame adjacent to the lower surface and the first plane is L2, the first concave surface is the surface of the first recess that is vertically opposite to the drive-side pin frame, the upper surface includes a second plane and a second concave surface, the vertical distance between the side of the drive-side pin frame adjacent to the upper surface and the second plane is L3, the second concave surface is the surface of the second recess that is vertically opposite to the drive-side pin frame, and the vertical distance between the first plane and the second plane is L1; the vertical distance between the side of the drive-side pin frame adjacent to the upper surface and the first concave surface is set to L4, and the vertical distance between the side of the drive-side pin frame adjacent to the lower surface and the second concave surface is set to L5, and L4 and L5 satisfy the relationship: L5 < 0.57L4.

[0008] In some examples of the present invention, the drive-side pin frame further includes a high-side drive power pin, which is longitudinally spaced between the drive-side ground pin and the high-side drive floating power supply voltage pin. The high-side drive power pin is electrically connected to the high-side drive chip, and one end of the high-side drive power pin extends at least partially from the molding compound and into the groove; and / or the longitudinal edge of the groove away from the substrate is defined as the groove boundary, and the longitudinal edge of the molding compound away from the substrate is defined as the molding compound boundary. The longitudinal distance between the groove boundary and the molding compound boundary is L6, where L6 > 4 mm.

[0009] In some examples of the present invention, the portion of the high-side drive power supply pin extending into the groove is spaced apart from the two longitudinal edges of the groove, and the portion of the drive-side ground pin extending into the groove is spaced apart from the two longitudinal edges of the groove. The longitudinal dimension of the groove is set to L7, and L7 satisfies the relationship: 2mm < L7 < 2.6mm.

[0010] In some examples of the present invention, the lateral dimension of the portion of the high-side drive power pin extending into the groove is set to L8, where L8 satisfies the relationship: L8 > 0.78 mm; and / or the lateral dimension of the portion of the drive-side ground pin extending into the groove is set to L9, where L9 satisfies the relationship: L9 > 0.78 mm; and / or an opening is provided on the side of the groove away from the high-side drive pad in the lateral direction, and the portion of the high-side drive power pin extending into the groove and the opening are spaced apart in the lateral direction by a distance L10, where L10 satisfies the relationship: 0.3 mm < L10 < 0.9 mm; and / or the portion of the drive-side ground pin extending into the groove and the opening are spaced apart in the lateral direction by a distance L11, where L11 satisfies the relationship: 0.3 mm < L11 < 0.9 mm.

[0011] In some examples of the present invention, the length dimension of the molding compound along the transverse direction is set to L12, and the width dimension of the molding compound along the longitudinal direction is set to L13. L12 and L13 satisfy the following relationships: 34mm < L12 < 36mm, 20mm < L13 < 26mm; and / or there are three low-side power pads, which are spaced apart in the transverse direction. Each of the three low-side power pads is provided with a low-side power chip, and the high-side power pads are provided with three high-side power chips spaced apart in the transverse direction. Each low-side drive pad and each high-side drive pad is provided with a low-side drive chip and a high-side drive chip, respectively. All three low-side power chips are electrically connected to the low-side drive chip, and all three high-side power chips are electrically connected to the high-side drive chip.

[0012] In some examples of the present invention, the driver-side pin frame further includes high-side input signal pins, which are laterally spaced between the high-side driver pad and the low-side driver pad. Each high-side input signal pin includes a first pin segment, a second pin segment, and a third pin segment. The first pin segment extends longitudinally, with one end extending longitudinally away from the substrate, protruding from the molding compound. The third pin segment extends laterally and is spaced apart from the side of the first pin segment laterally away from the low-side driver pad. The third pin segment is also spaced apart from the side of the first pin segment longitudinally facing the substrate. A second pin segment connects the first pin segment and the third pin segment. The second pin segment extends laterally... The dimension of the upper part is greater than the width of the first pin segment in the horizontal direction, the dimension of the second pin segment in the vertical direction is greater than the width of the third pin segment in the vertical direction, the high-side driver chip is electrically connected to the end of the third pin segment in the horizontal direction away from the second pin segment, the low-side driver chip is electrically connected to the second pin segment; and / or there are three high-side input signal pins, the first pin segments of the three high-side input signal pins are arranged sequentially and spaced apart in the horizontal direction, the third pin segments of the three high-side input signal pins are arranged sequentially and spaced apart in the vertical direction, and at least a portion of the orthographic projection of the three high-side input signal pins in the horizontal direction coincides with the orthographic projection of the high-side driver pad and / or the low-side driver pad in the horizontal direction.

[0013] In some examples of the present invention, the molding compound is provided with a plurality of core-pulling pin holes. The vertical orthographic projection of the core-pulling pin is defined as the core-pulling pin projection, the vertical orthographic projection of the power chip is defined as the power chip projection, the vertical orthographic projection of the substrate is defined as the substrate projection, and the vertical orthographic projection of the power pad is defined as the power pad projection. The substrate projection covers the core-pulling pin projection. The area of ​​the core-pulling pin projection is defined as S1, and the core-pulling pin projection and the power pad projection at least partially overlap with each other, with an overlap area of ​​S2. S1 and S2 satisfy the relationship: 0.4S1 < S2 < 0.6S1. The core-pulling pin hole projections are spaced apart on the side of the power chip projection facing the drive-side pin frame along the longitudinal direction. The plurality of core-pulling pin holes include a series of sequentially spaced core-pulling pin holes along the transverse direction. The device includes a first core-pulling pinhole, a second core-pulling pinhole, and a third core-pulling pinhole. The three low-side power pads are a first low-side power pad, a second low-side power pad, and a third low-side power pad, which are sequentially spaced laterally. Compared to the second low-side power pad, the third low-side power pad is more laterally adjacent to the high-side power pad. At least a portion of the projection of the first core-pulling pinhole coincides with the side of the projection of the first low-side power pad that is laterally away from the projection of the second low-side power pad. At least a portion of the projection of the second core-pulling pinhole coincides with the side of the projection of the high-side power pad that is laterally adjacent to the projection of the third low-side power pad. At least a portion of the projection of the third core-pulling pinhole coincides with the side of the projection of the high-side power pad that is laterally away from the projection of the third low-side power pad.

[0014] In some examples of the present invention, the centerline extending laterally of the substrate is defined as the substrate centerline, the substrate is symmetrically arranged longitudinally about the substrate centerline, at least one side edge of the molding compound has a screw hole, the centerline extending laterally of the screw hole is defined as the screw hole centerline, the screw holes are symmetrically arranged longitudinally about the screw hole centerline, the substrate centerline is spaced apart on the side of the screw hole centerline that is longitudinally away from the drive-side pin frame, the longitudinal distance between the substrate centerline and the screw hole centerline is defined as L14, L14 satisfies the relationship: L14 < 0.7 mm; and / or the centerline extending laterally of the power chip is defined as the power chip centerline, the power chip is symmetrically arranged longitudinally about the power chip centerline, the power chip centerline is spaced apart on the side of the screw hole centerline that is longitudinally facing the drive-side pin frame, the longitudinal distance between the screw hole centerline and the power chip centerline is defined as L15, L15 satisfies the relationship: L15 > 2.05 mm.

[0015] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a top view of a semiconductor device according to an embodiment of the present invention along one vertical side; Figure 3 This is a top view of a semiconductor device according to an embodiment of the present invention along the other vertical side; Figure 4 This is a cross-sectional view of a semiconductor device according to an embodiment of the present invention; Figure 5 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 6 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 7 This is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

[0017] Figure label: 100. Semiconductor devices; 10. Molded body; 11. Groove; 111. Groove boundary; 12. Screw hole; 121. Screw hole centerline; 13. Upper surface; 131. First recess; 1311. First plane; 1312. First concave surface; 1313. First recessed section; 1314. Second recessed section; 14. Lower surface; 141. Second recess; 1411. Second plane; 1412. Second concave surface; 15. Molded body boundary; 20. Substrate; 21. High-side power pad; 211. High-side power chip; 22. Low-side power pad; 221. Low-side power chip; 222. First low-side power pad; 223. Second low-side power pad; 224. Third low-side power pad; 24. Substrate centerline; 25. Power chip centerline; 30. Driver-side pin frame; 31. High-side driver chip; 32. Low-side driver chip; 35. High-side driver power supply pin; 36. Driver-side ground pin; 40. High-side input signal pin; 41. First pin segment; 42. Second pin segment; 43. Third pin segment; 50. High-side drive floating power supply voltage pin; 51. Bootstrap chip pad; 52. Bootstrap chip; 60. First core-pulling pin hole; 61. Second core-pulling pin hole; 62. Third core-pulling pin hole. Detailed Implementation

[0018] The following is for reference. Figures 1-7A semiconductor device 100 according to an embodiment of the present invention is described. The semiconductor device 100 can be applied to a circuit board assembly, the circuit board assembly can be applied to an electrical control box, and the electrical control box can be applied to an electrical device.

[0019] Combination Figures 1-7 As shown, the semiconductor device 100 according to the present invention mainly includes: a molding compound 10, a substrate 20, and a drive-side pin frame 30. The substrate 20 is at least partially disposed within the molding compound 10. The substrate 20 may be completely encapsulated by the molding compound 10, or it may be partially encapsulated and partially exposed on the surface of the molding compound 10. The drive-side pin frame 30 is at least partially disposed within the molding compound 10, and partially extends out of the molding compound 10 for electrical connection with external components. The molding compound 10 protects the substrate 20 and the drive-side pin frame 30 within the semiconductor device 100 to ensure stability and electrical insulation from external sources, thus guaranteeing the structural reliability of the semiconductor device 100. It should be noted that the pins of the drive-side pin frame 30 are spaced apart to ensure electrical isolation between them, and the longitudinal dimensions of the portions of the pins extending out of the molding compound 10 are inconsistent; this will not be elaborated further here.

[0020] It should be noted that, in one embodiment of the present invention, a small portion of the drive-side pin frame 30 extends longitudinally and is connected to the substrate 20, while the majority of the drive-side pin frame 30 is longitudinally spaced apart from the substrate 20.

[0021] In another embodiment of the present invention, a small portion of the substrate 20 extends longitudinally into the drive-side pin frame 30, while the majority of the substrate 20 is longitudinally spaced apart from the drive-side pin frame 30.

[0022] In another embodiment of the present invention, the substrate 20 and the drive-side pin frame 30 are completely separated from each other in the longitudinal direction.

[0023] It should be noted that the encapsulated body 10 has a horizontal, vertical and a longitudinal direction, and the horizontal, vertical and a longitudinal direction are perpendicular to each other.

[0024] Furthermore, the substrate 20 includes power pads on which power chips are disposed. The drive-side pin frame 30 has drive-side ground pins 36 on which drive-side ground pins 36 are disposed. The drive-side ground pins 36 have drive pads on which drive chips are disposed. The signal connection between the power chip and the drive chip needs to be soldered and fixed to the corresponding pads on the power chip and the drive chip respectively through electrical connection lines. Due to the structural design of the semiconductor device 100, the drive-side pin frame 30 needs to be vertically positioned higher than the substrate 20 so that the drive chip is away from the high-temperature area of ​​the power chip, thereby improving the heat dissipation effect. At the same time, it increases the electrical clearance and creepage distance, reduces the risk of high voltage interference and crosstalk, and improves the stability of drive control and system safety.

[0025] In some embodiments of the present invention, the thickness of the molding compound 10 in the vertical direction is L1, and L1 satisfies the relationship: 4.5mm < L1 < 6.5mm. By setting L1 to be greater than 4.5mm, the thickness of the molding compound 10 in the vertical direction can be larger. This not only increases the creepage distance from the pins in the drive-side pin frame 30 to the heat sink outside the molding compound 10, thus improving the stability and reliability of the semiconductor device 100, but also allows the thicker molding compound 10 to better protect the internal components and increase the voltage withstand performance of the semiconductor device 100.

[0026] In addition, the thickness L1 of the molding compound 10 along the vertical direction is set to be less than 6.5 mm. This can prevent L1 from being too large, which would not only lead to a larger size of the semiconductor device 100 and be detrimental to the miniaturization of the semiconductor device 100, but also prevent an excessively thick molding compound 10 from affecting the heat dissipation performance of the semiconductor device 100.

[0027] Combination Figures 1-4 As shown, the upper surface 13 is one vertical side surface of the molding compound 10. The upper surface 13 is vertically opposite to the power chip and / or driver chip. The lower surface 14 of the molding compound 10 is provided with a first recess 131. The first recess 131 is recessed towards the upper surface 13 in the vertical direction. The first recess 131 is located adjacent to the side of the molding compound 10 that is close to the driver side pin frame 30 in the vertical direction. The orthographic projection of the first recess 131 in the vertical direction is defined as the first recess projection. The orthographic projection of the bootstrap chip 52 in the vertical direction is defined as the bootstrap chip projection. The orthographic projection of the groove 11 in the vertical direction is defined as the groove 11 projection. The projection of the first recess 131 covers at least a portion of the bootstrap chip projection and at least a portion of the groove projection.

[0028] Specifically, by providing a first recess 131 on the lower surface 14 of the molding compound 10, the first recess 131 can further increase the creepage distance from the heat sink outside the molding compound 10 to the drive-side pin frame 30, thereby further improving the high voltage resistance performance of the semiconductor device 100.

[0029] Furthermore, since the thickness of the molding compound 10 at the first recess 131 will decrease, the present invention sets the thickness L1 of the molding compound 10 between 4.5 mm and 6.5 mm, and the vertical distance L2 between the side of the drive-side pin frame 30 adjacent to the lower surface 14 and the lower surface 14 is greater than the vertical distance L3 between the side of the drive-side pin frame 30 adjacent to the upper surface 13 and the upper surface 13. That is, the thickness of the molding compound 10 itself is large and the thickness of the molding compound 10 between the drive-side pin frame 30 and the lower surface 14 is also large. Thus, even if the thickness at the first recess 131 is reduced and the projection of the first recess 131 covers at least a portion of the projection of the bootstrap chip 52, the bootstrap chip 52 is not prone to dielectric breakdown at the first recess 131. Alternatively, the present invention can increase the longitudinal dimension of the molding compound 10 so that the projection of the first recess 131 can avoid the projection of the bootstrap chip. However, this would increase the volume of the semiconductor device 100, which is not conducive to the miniaturization of the semiconductor device 100.

[0030] In some embodiments of the present invention, combined with Figures 1-4 As shown, the molding compound 10 has a groove 11 on the side adjacent to the high-side drive pad in the lateral direction. The groove 11 is recessed towards the high-side drive pad in the lateral direction. One end of the drive-side ground pin 36 extends at least partially from the molding compound 10 and into the groove 11.

[0031] Specifically, since the drive-side ground pin 36 extends laterally, by extending at least partially one end of the drive-side ground pin 36 from the lateral side of the molded body 10 instead of extending from the side of the molded body 10 adjacent to the drive-side pin frame 30 in the longitudinal direction, the drive-side ground pin 36 can be prevented from occupying the space in the lateral direction of the molded body 10, and the lateral dimension of the drive-side pin frame 30 can be prevented from increasing, which can facilitate the miniaturization of the semiconductor device 100.

[0032] Since the end of the drive-side ground pin 36 extending to the lateral side of the molded body 10 does not connect to any external components and only serves a supporting function, and the drive-side ground pin 36 is a high-voltage pin, it is necessary to prevent the end of the drive-side ground pin 36 extending to the lateral side of the molded body 10 from coming into contact with the operator or external components.

[0033] By providing a groove 11 on one side of the molded package 10, and making the groove 11 recessed towards the high-side driving chip 31 in the lateral direction, the driving-side ground pin 36 can extend into the groove 11 after extending to one side of the molded package 10. In this way, while ensuring that there is a supporting effect between the driving-side ground pin 36 and the molded package 10, the part of the driving-side ground pin 36 extending out of the molded package 10 is placed in the groove 11. Operators or external parts are less likely to come into contact with the driving-side ground pin 36, which can improve the structural reliability and safety of the semiconductor device 100.

[0034] Furthermore, during the manufacturing process of the semiconductor device 100, the molding compound flows longitudinally from the substrate 20 to the drive-side pin frame 30. Since the groove 11 located on one side of the drive-side pin frame 30 is irregularly shaped, it is not conducive to the uniform filling of the molding compound. Therefore, by projecting the first recess 131 over the projection of the groove 11, the setting of the first recess 131 can improve the uniformity and sufficiency of the filling of the area between the groove 11 and the upper surface 13.

[0035] In some embodiments of the present invention, combined with Figures 1-4 As shown, the other side of the molding compound 10 along the vertical direction is the lower surface 14. The lower surface 14 is disposed opposite to the side of the substrate 20 away from the power chip in the vertical direction. The upper surface 13 of the molding compound 10 is provided with a second recess 141. The second recess 141 is recessed towards the lower surface 14 in the vertical direction. The second recess 141 is disposed adjacent to the side of the molding compound 10 that is close to the high-side drive pad in the horizontal direction. The orthographic projection of the second recess 141 in the vertical direction is defined as the second recess projection, and the orthographic projection of the low-side drive pad in the vertical direction is defined as the low-side drive pad projection. The projection of the second recess 141 at least partially covers the projection of the groove 11. The projection of the second recess 141 is spaced apart on the side of the bootstrap chip 52 projection that is away from the low-side drive pad projection in the horizontal direction.

[0036] Specifically, during the manufacturing process of the semiconductor device 100, the molding compound flows longitudinally from the substrate 20 to the drive-side lead frame 30. Since the groove 11 located on one side of the drive-side lead frame 30 is irregularly shaped, it is not conducive to the uniform filling of the molding compound. Therefore, by projecting the second recess 141 over the projection of the groove 11, the provision of the second recess 141 can improve the uniformity and sufficiency of the filling of the area between the groove 11 and the lower surface 14.

[0037] Furthermore, since the vertical distance L2 between the side of the drive-side pin frame 30 adjacent to the lower surface 14 and the lower surface 14 is greater than the vertical distance L3 between the side of the drive-side pin frame 30 adjacent to the upper surface 13 and the upper surface 13, that is, the vertical distance L3 between the side of the drive-side pin frame 30 adjacent to the upper surface 13 and the upper surface 13 is relatively small, the projection interval of the second recess 141 is set on the side of the bootstrap chip 52 projection that is laterally opposite to the projection of the low-side drive pad. This can prevent the bootstrap chip 52 from undergoing dielectric breakdown on the upper surface 13 of the plastic package 10, thus improving the structural reliability of the semiconductor device 100 more comprehensively.

[0038] Combination Figures 1-4 As shown, the first recess 131 includes a first recessed section 1313 and a second recessed section 1314. The first recessed section 1313 extends laterally, and the second recessed section 1314 connects the two ends of the first recessed section 1313 laterally and extends longitudinally toward one side of the substrate 20. There are three high-side drive floating power supply voltage pins 50. The three high-side drive floating power supply voltage pins 50 are spaced apart laterally. The three high-side drive floating power supply voltage pins 50 are spaced apart on the side of the high-side drive pad that is longitudinally away from the substrate 20. The three high-side drive floating power supply voltage pins 50 are all spaced apart from the low-side drive pad in the longitudinal direction. The vertical orthographic projection of the first recessed section 1313 covers at least a portion of the projection of the three bootstrap chips 52. The vertical orthographic projection of the one of the two second recessed sections 1314 adjacent to the high-side drive pad covers the projection of the groove 11.

[0039] Combination Figures 1-4 As shown, the lower surface 14 includes a first plane 1311 and a first concave surface 1312. The vertical distance between the drive-side pin frame 30 and the first plane 1311 along the side adjacent to the lower surface 14 is L2. The first concave surface 1312 is the surface of the first concave portion 131 that is vertically opposite to the drive-side pin frame 30. The upper surface 13 includes a second plane 1411 and a second concave surface 1412. The vertical distance between the drive-side pin frame 30 and the second plane 1411 along the side adjacent to the upper surface 13 is L3. The second concave surface 1412 is the surface of the second concave portion 141 that is vertically opposite to the drive-side pin frame 30. The vertical distance between the first plane 1311 and the second plane 1411 is L1. The vertical distance between the drive-side pin frame 30 and the first concave surface 1312 along the vertical adjacent side of the lower surface 14 is set to L4, and the vertical distance between the drive-side pin frame 30 and the second concave surface 1412 along the vertical adjacent side of the upper surface 13 is set to L5. L4 and L5 satisfy the relationship: L5 < 0.57L4.

[0040] Specifically, the vertical distance L5 between the drive-side pin frame 30 and the second concave surface 1412 along the vertical adjacent side of the upper surface 13 is set to be less than 0.57 times the vertical distance L4 between the drive-side pin frame 30 and the first concave surface 1312 along the vertical adjacent side of the lower surface 14. This can further improve the uniformity and sufficiency of the molding compound filling.

[0041] In addition, even if the vertical distance L5 between the drive-side pin frame 30 and the second concave surface 1412 along the side adjacent to the upper surface 13 is relatively small, the bootstrap chip 52 will not experience dielectric breakdown from the thinner second concave surface 141 because the second concave portion 141 is spaced apart from the bootstrap chip 52.

[0042] Combination Figures 5-7 As shown, the edge of the groove 11 that is away from the substrate 20 along the longitudinal direction is defined as the groove boundary 111, and the edge of the molding compound 10 that is away from the substrate 20 along the longitudinal direction is defined as the molding compound boundary 15. The distance between the groove boundary 111 and the molding compound boundary 15 in the longitudinal direction is L6, where L6 > 4 mm.

[0043] Furthermore, by setting the longitudinal distance between the groove boundary 111 and the molding compound boundary 15 to be greater than 4 mm, the groove 11 can utilize the spare space of the portion of the molding compound 10 located near the substrate 20 on the drive-side pin frame 30, allowing the drive-side pins 36 to extend into the groove 11. This avoids increasing the lateral dimension of the molding compound 10 and also avoids interference between the groove 11 and the pins of the drive-side pin frame 30 located longitudinally away from the substrate 20. This avoids the need for the molding compound 10 to increase its lateral dimension, and the groove 11 avoids the pins of the drive-side pin frame 30 located longitudinally away from the substrate 20. This improves the rationality of the structural layout of the semiconductor device 100.

[0044] Combination Figures 5-7 As shown, the drive-side pin frame 30 also includes a high-side drive power supply pin 35. The high-side drive power supply pin 35 is longitudinally spaced between the drive-side ground pin 36 and the high-side drive floating power supply voltage pin 50. The high-side drive power supply pin 35 is electrically connected to the high-side drive chip 31. One end of the high-side drive power supply pin 35 extends at least partially from the molding compound 10 and into the groove 11. The portion of the high-side drive power supply pin 35 extending into the groove 11 is spaced apart from the two longitudinal edges of the groove 11. The portion of the drive-side ground pin 36 extending into the groove 11 is also spaced apart from the two longitudinal edges of the groove 11. The longitudinal dimension of the groove 11 is set to L7, and L7 satisfies the relationship: 2mm < L7 < 2.6mm.

[0045] Specifically, by extending at least partially from one end of the high-side drive power pin 35 into the groove 11, the molded body 10 can also support the high-side drive power pin 35 on one side along the lateral direction. The longitudinal dimension L7 of the groove 11 is set to be greater than 2 mm, and the portion of the high-side drive power pin 35 extending into the groove 11 is spaced apart from the two longitudinal edges of the groove 11. The portion of the drive-side ground pin 36 extending into the groove 11 is also spaced apart from the two longitudinal edges of the groove 11. This prevents the cutter that cuts the high-side drive power pin 35 and the drive-side ground pin extending outside the molded body 10 from contacting the longitudinal sides of the groove 11, thereby damaging the molding compound and reducing the protective effect of the molded body 10 on the internal devices.

[0046] Furthermore, by setting the longitudinal dimension L7 of the groove 11 to be less than 2.6mm, it can prevent the longitudinal dimension of the groove 11 from being too large, thus preventing the operator's hand from easily reaching into the groove 11 to contact the pin, and also preventing the longitudinal dimension of the groove 11 from being too large and affecting the setting of other objects inside the encapsulation 10.

[0047] Combination Figure 5 and Figure 6 As shown, the lateral dimension of the portion of the high-side drive power supply pin 35 extending into the groove 11 is set to L8, and L7 satisfies the relationship: L8 > 0.78 mm; and / or the lateral dimension of the portion of the drive-side ground pin 36 extending into the groove 11 is set to L9, and L9 satisfies the relationship: L9 > 0.78 mm.

[0048] Specifically, by setting the lateral dimension L8 of the portion of the high-side drive power pin 35 extending into the groove 11 and the lateral dimension L9 of the portion of the drive-side ground pin 36 extending into the groove 11 to be greater than 0.78 mm, it can not only ensure that the molding compound 10 can support both the high-side drive power pin 35 and the drive ground pin, but also prevent the cutter that cuts the high-side drive power pin 35 and the drive ground pin extending outside the molding compound 10 from being too close to the molding compound 10 in the lateral direction and damaging the molding compound.

[0049] Combination Figure 5 and Figure 6 As shown, the groove 11 has an opening on the side away from the high-side drive pad in the lateral direction. The portion of the high-side drive power supply pin 35 extending into the groove 11 is spaced laterally from the opening with a distance of L10, where L10 satisfies the relationship: 0.3mm < L10 < 0.9mm; and / or the portion of the drive-side ground pin 36 extending into the groove 11 is spaced laterally from the opening with a distance of L11, where L11 satisfies the relationship: 0.3mm < L11 < 0.9mm.

[0050] Specifically, by setting the lateral distance L10 between the portion of the high-side drive power pin 35 extending into the groove 11 and the opening, and the lateral distance L11 between the portion of the drive-side ground pin 36 extending into the groove 11 and the opening, both to be greater than 0.3 mm, it can prevent the high-side drive power pin 35 and the drive-side ground pin 36 from being too close to the opening of the groove 11 in the lateral direction. This would prevent the operator's hand or external parts from easily coming into contact with the high-side drive power pin 35 and the drive-side ground pin 36, thereby further improving the reliability and safety of the semiconductor device 100.

[0051] Furthermore, by setting the lateral distance L10 between the portion of the high-side drive power pin 35 extending into the groove 11 and the opening, and the lateral distance L11 between the portion of the drive-side ground pin 36 extending into the groove 11 and the opening, both to be less than 0.9 mm, while ensuring that the high-side drive power pin 35 and the drive-side ground pin 36 do not come into contact with the outside, it is possible to avoid the lateral dimension of the groove 11 being too large, which would cause the recessed setting to affect the devices inside the molding compound 10.

[0052] Combination Figures 5-7 As shown, the length dimension of the molding compound 10 in the lateral direction is set to L12, and the width dimension of the molding compound 10 in the longitudinal direction is set to L13. L12 and L13 satisfy the following relationships: 34mm < L12 < 36mm, 20mm < L13 < 26mm. By setting the lateral and longitudinal dimensions of the molding compound 10 within a small range, it is possible to ensure the miniaturization of the semiconductor device 10 while ensuring that the molding compound 10 encapsulates at least a portion of the substrate 20, at least a portion of the driver-side pin frame 30, the driver chip, and the power chip.

[0053] Combination Figure 5 and Figure 6 As shown, there are three low-side power pads 22, which are arranged horizontally at intervals. Each of the three low-side power pads 22 has a low-side power chip 221, and the high-side power pads 21 have three high-side power chips 211 arranged horizontally at intervals. A low-side driver chip 32 and a high-side driver chip 31 are respectively provided on the low-side driver pad and the high-side driver pad. All three low-side power chips 221 are electrically connected to the low-side driver chip 32, and all three high-side power chips 211 are electrically connected to the high-side driver chip 31.

[0054] In some embodiments of the present invention, the power pads include horizontally spaced low-side power pads 2222 and high-side power pads 21. There are three low-side power pads 22, which are horizontally spaced. Each of the three low-side power pads 22 has a low-side power chip 221. Each of the high-side power pads 21 has three horizontally spaced high-side power chips 211. The drive pads include high-side drive pads and low-side drive pads. Both the high-side drive pads and the low-side drive pads are located on the drive-side ground pin 36 and are horizontally spaced. Each of the low-side drive pads and the high-side drive pads has a low-side drive chip 32 and a high-side drive chip 31. The three low-side power chips 221 are electrically connected to the low-side drive chip 32, and the three high-side power chips 211 are electrically connected to the high-side drive chip 31.

[0055] Combination Figures 5-7 As shown, the driver-side pin frame 30 also includes a high-side input signal pin 40. The high-side input signal pin 40 is laterally spaced between the high-side driver pad and the low-side driver pad. The high-side input signal pin 40 includes a first pin segment 41, a second pin segment 42, and a third pin segment 43. The first pin segment 41 extends longitudinally, with one end extending from the molding compound 10 away from the substrate 20. The third pin segment 43 extends laterally and is spaced apart from the side of the first pin segment 41 that is laterally away from the low-side driver pad. The third pin segment is also spaced apart from the side of the first pin segment 41 that is longitudinally facing the substrate 20. The second pin segment 42 is connected between the first pin segment 41 and the third pin segment 43. The second pin segment 42 is laterally larger than the width of the first pin segment 41 and is longitudinally larger than the width of the third pin segment 43. The high-side driver chip 31 is electrically connected to the end of the third pin segment 43 that is laterally away from the second pin segment 42, and the low-side driver chip 32 is electrically connected to the second pin segment 42.

[0056] Specifically, the high-side input signal pin 40 can electrically connect the high-side driver chip 31 and the low-side driver chip 32 to achieve interlocking. When the high-side driver chip 31 is turned on, the high-side driver chip 31 can send a signal to the low-side driver chip 32 through the high-side input signal pin 40 to turn off the low-side driver chip 32. This can improve the safety and reliability of the semiconductor device 100.

[0057] Furthermore, the first pin segment 41 extends longitudinally and extends from the molding compound 10 at one end that is longitudinally away from the substrate 20. The third pin segment 43 extends laterally and is spaced apart from the side of the first pin segment 41 that is laterally away from the low-side drive pad. The third pin is spaced apart from the side of the first pin segment 41 that is longitudinally facing the substrate 20. The second pin segment 42 is connected between the first pin segment 41 and the third pin segment 43. This allows the high-side input signal pin 40 to make full use of the space in the lateral and longitudinal directions, and allows the high-side input signal pin 40 to make more uniform use of the space on the drive-side pin frame 30.

[0058] Furthermore, by electrically connecting the high-side driver chip 31 to the third pin segment 43 laterally away from the second pin segment 42, and electrically connecting the low-side driver chip 32 to the second pin segment 42, the electrical connection line between the low-side driver chip 32 and the second pin segment 42 can be shortened, which can improve the stability and reliability of the electrical connection.

[0059] In addition, the second pin segment 42 is wider in the horizontal direction than the first pin segment 41, and the second pin segment 42 is wider in the vertical direction than the third pin segment 43. By increasing the dimensions of the second pin segment 42 in both the horizontal and vertical directions, not only can the stability and reliability of the electrical connection between the low-side driver chip 32 and the second pin segment 42 be improved, but the connection transition between the first pin segment 41 and the third pin segment 43 can also be made more reliable, thereby improving the stability and reliability of the high-side signal input pin.

[0060] Furthermore, there are three high-side input signal pins 40. The first pin segments 41 of the three high-side input signal pins 40 are arranged sequentially and spaced apart in the horizontal direction, and the third pin segments 43 of the three high-side input signal pins 40 are arranged sequentially and spaced apart in the vertical direction. At least a portion of the orthographic projection of the three high-side input signal pins 40 in the horizontal direction coincides with the orthographic projection of the high-side drive pad and / or the low-side drive pad in the horizontal direction.

[0061] This configuration can fully utilize the available space between the high-side drive pad and the low-side drive pad, improve the space utilization of the drive-side pin frame 30, and further reduce the length of the electrical connection wires between the high-side drive chip 31 and the high-side input signal pin 40, as well as further reduce the length of the electrical connection wires between the low-side drive chip 32 and the high-side input signal pin 40.

[0062] Combination Figures 5-7As shown, the molding compound 10 is provided with a plurality of core-pulling pin holes. The orthographic projection of the core-pulling pin in the vertical direction is defined as the core-pulling pin projection, the orthographic projection of the power chip in the vertical direction is defined as the power chip projection, the orthographic projection of the substrate 20 in the vertical direction is defined as the substrate 20 projection, and the orthographic projection of the power pad in the vertical direction is defined as the power pad projection. The substrate 20 projection covers the core-pulling pin projection. The area of ​​the core-pulling pin projection is defined as S1. The core-pulling pin projection and the power pad projection at least partially overlap and the overlapping area is defined as S2. S1 and S2 satisfy the relationship: 0.4S1 < S2 < 0.6S1. The core-pulling pin hole projections are spaced apart on the side of the power chip projection facing the drive-side pin frame 30 along the longitudinal direction.

[0063] Specifically, by projecting the substrate 20 onto the core-pulling pin, the pressing area of ​​the core-pulling pin on the substrate 20 can be increased, thereby improving the stability of the substrate 20 during molding.

[0064] Furthermore, the area of ​​the core-pulling pin projection is set to S1, and the core-pulling pin projection and the power pad projection are at least partially overlapped with an overlap area of ​​S2. S1 and S2 satisfy the relationship: 0.4S1 < S2 < 0.6S1. This not only prevents the core-pulling pin from occupying too much space on the power pad and affecting the normal setting of the power chip on the power pad, but also prevents the core-pulling pin from having a small pressing area on the power pad and poor stability of the power pad.

[0065] In addition, the projection of the core-pulling pin hole is located on the side of the substrate 20 facing the drive-side pin frame 30 in the longitudinal direction, which can avoid the core-pulling pin occupying the space in the lateral direction of the substrate 20, resulting in a reduction in the lateral size of the power chip. This can improve the current carrying capacity of the semiconductor device 100.

[0066] Combination Figures 5-7 As shown, the plurality of core-pulling pinholes include a first core-pulling pinhole 60, a second core-pulling pinhole 61, and a third core-pulling pinhole 62 spaced apart laterally. The three low-side power pads 22 are a first low-side power pad 222, a second low-side power pad 223, and a third low-side power pad 224 spaced apart laterally. Compared to the second low-side power pad 223, the third low-side power pad 224 is laterally closer to the high-side power pad 21. At least a portion of the projection of the first core-pulling pinhole 60 coincides with the side of the projection of the first low-side power pad 222 that is laterally away from the projection of the second low-side power pad 223. At least a portion of the projection of the second core-pulling pinhole 61 coincides with the side of the projection of the high-side power pad 21 that is laterally adjacent to the projection of the third low-side power pad 224. At least a portion of the projection of the third core-pulling pinhole 62 coincides with the side of the projection of the high-side power pad 21 that is laterally away from the projection of the third low-side power pad 224.

[0067] This configuration ensures that the core-pulling pins press more evenly onto the substrate 20 in the lateral direction, while minimizing the number of core-pulling pins.

[0068] Combination Figures 5-7 As shown, the centerline extending laterally of the substrate 20 is defined as the substrate centerline 24. The substrate 20 is symmetrically arranged about the substrate centerline 24 in the longitudinal direction. At least one side edge of the molding compound 10 has a screw hole 12. The centerline extending laterally of the screw hole 12 is defined as the screw hole centerline 121. The screw holes 12 are symmetrically arranged about the screw hole centerline 121 in the longitudinal direction. The substrate centerline 24 is spaced apart from the side of the screw hole centerline 121 that is longitudinally away from the drive-side pin frame 30. The distance between the substrate centerline 24 and the screw hole centerline 121 in the longitudinal direction is defined as L14. L14 satisfies the relationship: L14 < 0.7 mm.

[0069] Specifically, by providing screw holes 12 on the molding compound 10 and providing through holes on the heat sink corresponding to the screw holes 12 on the molding compound 10, and by connecting and fixing the molding compound 10 and the heat sink with screws, the heat generated by the device inside the molding compound 10 can be transferred to the molding compound 10, and then transferred to the heat sink for heat dissipation through the molding compound 10.

[0070] Furthermore, by positioning the substrate centerline 24 at intervals on the side of the screw hole centerline 121 that is longitudinally away from the drive-side pin frame 30, and setting the longitudinal distance L14 between the substrate centerline 24 and the screw hole centerline 121 to be less than 0.7 mm, the longitudinal distance between the substrate centerline 24 and the screw hole centerline 121 can be reduced, and the screw hole centerline 121 and the substrate centerline 24 can be basically aligned. After the screw is installed, the pressing force of the screw on the substrate 20 can be distributed more evenly across the entire substrate 20, resulting in more uniform heat transfer between the substrate 20 and the external heat sink due to uniform force, thus reducing heat concentration on the substrate 20. This can improve the heat dissipation performance of the substrate 20 and the entire semiconductor device 100.

[0071] Combination Figure 5 and Figure 6 As shown, the center line extending laterally of the power chip is defined as the power chip center line 25. The power chips are symmetrically arranged about the power chip center line 25 in the vertical direction. The power chip center line 25 is spaced apart from the screw hole center line 121 on the side facing the drive side pin frame 30 in the vertical direction.

[0072] Specifically, by setting the power chip centerline 25 at intervals on the side of the screw hole centerline 121 that is longitudinally facing the drive-side pin frame 30, the power chip centerline 25 and the screw hole centerline 121 can be staggered, reducing the impact of the screw pressing force on the power chip and improving the structural reliability of the power chip.

[0073] Furthermore, with the screw hole centerline 121 and the power chip centerline 25 misaligned, the power chip centerline 25 is positioned at intervals on the side of the screw hole centerline 121 facing the drive-side pin frame 30 longitudinally. This also prevents the power chip and the drive chip from having a large longitudinal distance, which would greatly reduce the space for effectively setting the power chip while keeping the longitudinal dimensions of the substrate 20 unchanged. This can increase the space for effectively setting the power chip on the substrate 20.

[0074] Combination Figure 5 and Figure 6 As shown, the longitudinal distance between the screw hole centerline 121 and the power chip centerline 25 is set to L15, and L15 satisfies the relationship: L15 > 2.05 mm.

[0075] Specifically, by setting the vertical distance L15 between the screw hole centerline 121 and the power chip centerline 25 to be greater than 2.05mm, it is possible to prevent the distance L15 between the screw hole centerline 121 and the power chip centerline 25 from being too small. Under the premise that the vertical dimension of the substrate 20 remains unchanged, the space for effectively setting the power chip on the substrate 20 can be further increased.

[0076] Specifically, by setting the thickness L15 of the substrate 20 in the vertical direction to be less than 1.2 mm, the thickness of the substrate 20 can be reduced, which is beneficial for heat dissipation of the substrate 20, thereby improving the current carrying capacity of the semiconductor device 100.

[0077] It should be noted that the power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip, etc.

[0078] In some embodiments of the present invention, the semiconductor material of the power chip may be silicon.

[0079] In other embodiments of the present invention, the semiconductor material of the power chip may also be a wide-bandgap semiconductor, such as SiC and GaN.

[0080] In some embodiments of the present invention, the substrate 20 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads, an insulating layer, and a heat dissipation layer formed by sequentially stacking. The main material of the pads is a copper layer or an aluminum layer, the main material of the insulating layer is an AlN, or Al, or SiN, or a ceramic insulating layer composed of several materials, and the main material of the heat dissipation layer is a copper layer or an aluminum layer. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads and an insulating layer disposed below the pads. The main material of the insulating layer is an AlN ceramic insulating layer, or Al... The substrate 20 may be constructed with a ceramic insulating layer or a SiN ceramic insulating layer, in which case most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the insulating layer of the substrate 20 is exposed from the outer surface of the molding compound 10; alternatively, the substrate 20 may be formed solely of solder pads, in which case the substrate 20 is disposed within the molding compound 10, and the molding compound 10 completely encapsulates the substrate 20. The specific structural form of the substrate 20 can be adjusted according to the specific requirements and application environment of the semiconductor device 100.

[0081] In some embodiments of the present invention, the semiconductor device 100 can withstand a voltage of 600V-1200V and a current carrying capacity of 30-50A.

[0082] In some embodiments of the present invention, when the substrate 20 is composed of an insulating layer and copper layers on both vertical sides, the thickness of the insulating layer along the vertical direction can be 0.38 mm, and the thickness of the copper layer along the vertical direction can be 0.3 mm.

[0083] The circuit board assembly according to the present invention may mainly include the semiconductor device 100 described above. Specifically, since the semiconductor device 100 has a more reliable structure and higher reliability and stability, applying the semiconductor device 100 to the circuit board assembly can prevent short circuits in the circuit board assembly and improve the working performance of the circuit board assembly.

[0084] The electrical control box according to the present invention may mainly include the aforementioned circuit board assembly. Specifically, since the circuit board assembly has a more reliable structure and good working performance, applying the circuit board assembly to the electrical control box can improve the working performance of the electrical control box and extend its service life.

[0085] The electrical device according to the present invention may mainly include: the aforementioned electrical control box. Specifically, since the electrical control box has a more reliable structure and good working performance, applying the electrical control box to the electrical device can improve the working performance and quality of the electrical device.

[0086] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0087] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0088] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, The semiconductor device (100) includes: A molding compound (10) having a horizontal, a vertical and a longitudinal dimension, wherein the horizontal, the longitudinal and the vertical dimensions are perpendicular to each other; A substrate (20) is at least partially disposed within the molding compound (10). The substrate (20) has power pads, which include a high-side power pad (21) and a low-side power pad (22) spaced laterally. A high-side power chip (211) is disposed on the high-side power pad (21), and a low-side power chip (221) is disposed on the low-side power pad (22). A drive-side pin frame (30) is at least partially disposed within the molding compound (10) and spaced apart on the side of the substrate (20) longitudinally away from the power-side pins. The drive-side pin frame (30) is provided with a drive-side ground pin (36) and a high-side drive floating power supply voltage pin (50). The drive-side ground pin (36) is provided with a high-side drive pad and a low-side drive pad spaced apart laterally. A low-side drive chip (32) is disposed on the low-side drive pad, and a high-side drive chip (31) is disposed on the high-side drive pad. The low-side drive chip (32) and the low-side power chip (221) are electrically connected, and the high-side drive chip (31) and the high-side power chip (211) are electrically connected. A bootstrap chip pad (51) is provided on the high-side drive floating power supply voltage pin (50), and a bootstrap chip (52) is provided on the bootstrap chip pad (51). The bootstrap chip (52) and the drive chip are electrically connected. The molded body (10) has one vertical surface as the upper surface (13), which is vertically opposite to the power chip and / or the driver chip. The other vertical surface of the molded body (10) is the lower surface (14), which is vertically opposite to the side of the substrate (20) away from the power chip. The thickness of the molded body (10) in the vertical direction is set as L1, and L1 satisfies the relationship: 4.5mm≤L1≤6.5mm. The vertical distance between the side of the driver-side pin frame (30) adjacent to the lower surface (14) and the lower surface (14) is L2. The vertical distance between the side of the driver-side pin frame (30) adjacent to the upper surface (13) and the upper surface (13) is L3. L2 and L3 satisfy the relationship: L2>L3. The molding compound (10) has a groove (11) on one side of the high-side drive pad in the lateral direction. The groove (11) is recessed on the side of the high-side drive pad in the lateral direction. The drive-side ground pin (36) extends in the lateral direction and one end extends at least partially from the molding compound (10) and into the groove (11). The lower surface (14) of the molding compound (10) is provided with a first recess (131). The first recess (131) is recessed in the vertical direction toward the upper surface (13). The first recess (131) is located adjacent to the side of the molding compound (10) that is close to the driving side pin frame (30) in the longitudinal direction. The orthographic projection of the first recess (131) in the vertical direction is defined as the first recess projection. The orthographic projection of the bootstrap chip (52) in the vertical direction is defined as the bootstrap chip (52) projection. The orthographic projection of the groove (11) in the vertical direction is defined as the groove (11) projection. The projection of the first recess (131) covers at least a portion of the projection of the bootstrap chip (52). The projection of the first recess (131) covers at least a portion of the projection of the groove (11). The upper surface (13) of the molding compound (10) is provided with a second recess (141). The second recess (141) is recessed in the vertical direction toward the lower surface (14). The second recess (141) is located adjacent to the side of the molding compound (10) that is close to the high-side drive pad in the lateral direction. The orthographic projection of the second recess (141) in the vertical direction is defined as the second recess projection. The orthographic projection of the low-side drive pad in the vertical direction is defined as the low-side drive pad projection. The second recess projection at least partially covers the recess projection. The projection of the second recess (141) is spaced apart from the side of the bootstrap chip (52) projection that is laterally away from the low-side drive pad projection.

2. The semiconductor device according to claim 1, characterized in that, The first recess (131) includes a first recessed section (1313) and a second recessed section (1314). The first recessed section (1313) extends laterally, and the second recessed section (1314) is connected to both ends of the first recessed section (1313) and extends longitudinally toward the substrate (20). There are three high-side drive floating power supply voltage pins (50). The three high-side drive floating power supply voltage pins (50) are spaced apart laterally. The three high-side drive floating power supply voltage pins (50) are spaced apart on the side of the high-side drive pad that is longitudinally away from the substrate (20). The three high-side drive floating power supply voltage pins (50) are all spaced apart from the low-side drive pad in the longitudinal direction. The vertical orthographic projection of the first recessed section (1313) covers at least a portion of the projection of the three bootstrap chips (52). The vertical orthographic projection of the one of the two second recessed sections (1314) adjacent to the high-side drive pad covers the projection of the groove (11).

3. The semiconductor device according to claim 1, characterized in that, The lower surface (14) includes a first plane (1311) and a first concave surface (1312). The vertical distance between the side of the driving-side pin frame (30) adjacent to the lower surface (14) and the first plane (1311) is L2. The first concave surface (1312) is the surface of the first recess (131) that is vertically opposite to the driving-side pin frame (30). The upper surface (13) includes a second plane (1411) and a second concave surface (1412). The vertical distance between the side of the driving-side pin frame (30) adjacent to the upper surface (13) and the second plane (1411) is L3. The second concave surface (1412) is the surface of the second recess (141) that is vertically opposite to the driving-side pin frame (30). The vertical distance between the first plane (1311) and the second plane (1411) is L1. The vertical distance between the side of the driving-side pin frame (30) adjacent to the upper surface (13) and the first concave surface (1312) is set to L4, and the vertical distance between the side of the driving-side pin frame (30) adjacent to the lower surface (14) and the second concave surface (1412) is set to L5. L4 and L5 satisfy the relationship: L5 < 0.57L4.

4. The semiconductor device according to claim 1, characterized in that, The drive-side pin frame (30) further includes a high-side drive power pin (35), which is longitudinally spaced between the drive-side ground pin (36) and the high-side drive floating power supply voltage pin (50). The high-side drive power pin (35) is electrically connected to the high-side drive chip (31), and one end of the high-side drive power pin (35) extends at least partially from the molding compound (10) and into the recess (11); and / or The groove (11) is defined as the groove boundary (111) on the side away from the substrate (20) along the longitudinal direction, and the molding compound (10) is defined as the molding compound boundary (15) on the side away from the substrate (20) along the longitudinal direction. The distance between the groove boundary (111) and the molding compound boundary (15) in the longitudinal direction is L6, where L6 > 4 mm.

5. The semiconductor device according to claim 4, characterized in that, The portion of the high-side drive power pin (35) extending into the groove (11) is spaced apart from the two longitudinal edges of the groove (11). The portion of the drive-side ground pin (36) extending into the groove (11) is spaced apart from the two longitudinal edges of the groove (11). The longitudinal dimension of the groove (11) is set to L7, and L7 satisfies the relationship: 2mm < L7 < 2.6mm.

6. The semiconductor device according to claim 5, characterized in that, The lateral dimension of the portion of the high-side drive power supply pin (35) extending into the groove (11) is set to L8, where L8 satisfies the following relationship: L8 > 0.78 mm; and / or The lateral dimension of the portion of the drive-side ground pin (36) extending into the groove (11) is set to L9, where L9 satisfies the following relationship: L9 > 0.78 mm; and / or The groove (11) has an opening on the side away from the high-side drive pad in the lateral direction. The portion of the high-side drive power pin (35) extending into the groove (11) is spaced laterally from the opening by a distance L10, where L10 satisfies the relationship: 0.3mm < L10 < 0.9mm; and / or The portion of the drive-side ground pin (36) extending into the groove (11) is spaced laterally from the opening with a distance of L11, where L11 satisfies the relationship: 0.3mm < L11 < 0.9mm.

7. The semiconductor device according to claim 1, characterized in that, The length of the molding compound (10) in the transverse direction is set to L12, and the width of the molding compound (10) in the longitudinal direction is set to L13. L12 and L13 satisfy the following relationships: 34mm < L12 < 36mm, 20mm < L13 < 26mm; and / or There are three low-side power pads (22), which are spaced apart in the horizontal direction. Each of the three low-side power pads (22) has a low-side power chip (221), and the high-side power pads (21) have three high-side power chips (211) spaced apart in the horizontal direction. A low-side driving chip (32) and a high-side driving chip (31) are respectively provided on the low-side driving pad and the high-side driving pad. The three low-side power chips (221) are all electrically connected to the low-side driving chip (32), and the three high-side power chips (211) are all electrically connected to the high-side driving chip (31).

8. The semiconductor device according to claim 7, characterized in that, The driving-side pin frame (30) further includes high-side input signal pins (40), which are laterally spaced between the high-side driving pad and the low-side driving pad. Each high-side input signal pin (40) includes a first pin segment (41), a second pin segment (42), and a third pin segment (43). The first pin segment (41) extends longitudinally, with one end extending away from the substrate (20) from the molding compound (10). The third pin segment (43) extends laterally and is spaced apart from the side of the first pin segment (41) that is laterally away from the low-side driving pad. The first pin segment (41) faces the substrate (20) longitudinally, and the second pin segment (42) is connected between the first pin segment (41) and the third pin segment (43). The second pin segment (42) is wider in the lateral direction than the first pin segment (41) in the lateral direction, and the second pin segment (42) is wider in the longitudinal direction than the third pin segment (43) in the longitudinal direction. The high-side driving chip (31) is electrically connected to the end of the third pin segment (43) that is laterally away from the second pin segment (42), and the low-side driving chip (32) is electrically connected to the second pin segment (42); and / or There are three high-side input signal pins (40). The first pin segments (41) of the three high-side input signal pins (40) are arranged in a horizontal direction with intervals in between. The third pin segments (43) of the three high-side input signal pins (40) are arranged in a vertical direction with intervals in between. At least a portion of the orthographic projection of the three high-side input signal pins (40) in the horizontal direction coincides with the orthographic projection of the high-side drive pad and / or the low-side drive pad in the horizontal direction.

9. The semiconductor device according to claim 7, characterized in that, The molding compound (10) is provided with a plurality of core-pulling pin holes. The vertical projection of the core-pulling pin is defined as the core-pulling pin projection, the vertical projection of the power chip is defined as the power chip projection, the vertical projection of the substrate (20) is defined as the substrate (20) projection, the vertical projection of the power pad is defined as the power pad projection, the substrate (20) projection covers the core-pulling pin projection, the area of ​​the core-pulling pin projection is defined as S1, the core-pulling pin projection and the power pad projection at least partially overlap and the overlapping area is defined as S2, S1 and S2 satisfy the relationship: 0.4S1<S2<0.6S1, the core-pulling pin hole projections are spaced apart on the side of the power chip projection facing the driving side pin frame (30) along the longitudinal direction; Multiple core-pulling pinholes include a first core-pulling pinhole (60), a second core-pulling pinhole (61), and a third core-pulling pinhole (62) spaced laterally. The three low-side power pads (22) are a first low-side power pad (222), a second low-side power pad (223), and a third low-side power pad (224) spaced laterally. Compared to the second low-side power pad (223), the third low-side power pad (224) is more laterally adjacent to the high-side power pad (21). The first core-pulling pinhole (60)... 0) At least a portion of the projection coincides with the side of the projection of the first low-side power pad (222) that is laterally away from the projection of the second low-side power pad (223), at least a portion of the projection of the second core-pulling pin (61) coincides with the side of the projection of the high-side power pad (21) that is laterally adjacent to the projection of the third low-side power pad (224), and at least a portion of the projection of the third core-pulling pin (62) coincides with the side of the projection of the high-side power pad (21) that is laterally away from the projection of the third low-side power pad (224).

10. The semiconductor device according to claim 1, characterized in that, The centerline extending laterally of the substrate (20) is defined as the substrate centerline (24). The substrate (20) is symmetrically arranged longitudinally about the substrate centerline (24). Screw holes (12) are formed on at least one side edge of the molding compound (10). The centerline extending laterally of the screw holes (12) is defined as the screw hole centerline (121). The screw holes (12) are symmetrically arranged longitudinally about the screw hole centerline (121). The substrate centerline (24) is spaced apart from the side of the screw hole centerline (121) that is longitudinally away from the drive-side pin frame (30). The longitudinal distance between the substrate centerline (24) and the screw hole centerline (121) is defined as L14, where L14 satisfies the relationship: L14 < 0.7 mm; and / or The center line extending laterally of the power chip is defined as the power chip center line (25). The power chip is symmetrically arranged about the power chip center line (25) in the longitudinal direction. The power chip center line (25) is spaced apart from the screw hole center line (121) on the side facing the driving side pin frame (30) in the longitudinal direction. The distance between the screw hole center line (121) and the power chip center line (25) in the longitudinal direction is defined as L15, and L15 satisfies the relationship: L15 > 2.05 mm.

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