Systems and methods for reducing irregularities within a plasma-based processing chamber

Abstract

A processing chamber for performing a plasma-based process on a substrate is provided. The processing chamber includes a support structure configured to support a substrate within the processing chamber. The support structure is configured to be displaced in a vertical direction relative to the processing chamber. The chamber further includes one or more lift pins configured to facilitate transfer of the substrate to and from the support structure, the lift pins extending vertically through apertures of the support structure. Each of the one or more lift pins includes an inner shaft and an outer shaft, the inner shaft including a pin head and a lower pin portion, and the outer shaft surrounding the inner shaft and including an outer shaft head surrounding a portion of the inner shaft pin head and a lower surrounding portion surrounding the lower pin portion. Both the inner shaft pin head and the outer shaft head can be formed of an electrically conductive material.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to a substrate support assembly for reducing irregularities within a plasma-based processing chamber, and more particularly to a substrate support assembly for reducing local capacitance. Background Technology

[0002] In substrate manufacturing systems, substrates can undergo various plasma-based processes in dedicated chambers, such as etching to remove material layers or deposition to add material layers. These chambers are highly controlled environments in which parameters such as temperature, pressure, and chemical concentration are precisely controlled to achieve the desired material properties.

[0003] Multiple lifting pins are frequently used to receive substrates and move them to a dedicated substrate support assembly. The lifting pins are used during loading and unloading procedures, while the substrate support assembly ensures substrate stability and levelness during processing. This minimizes the risk of defects or inhomogeneous material properties. Typically, the lifting pins and substrate support assembly are integrated. The material properties of each, as well as their geometry and spatial arrangement, affect the efficiency of plasma-based processing. Summary of the Invention

[0004] The following is a simplified overview of this disclosure to provide a basic understanding of some aspects of it. This overview is not a comprehensive summary of this disclosure. Its purpose is neither to identify key or essential elements of this disclosure, nor to depict any category of specific embodiments of this disclosure or any category of the claims. Its sole purpose is to present some concepts of this disclosure in a simplified form as a prelude to the more detailed description that follows.

[0005] In some aspects, a processing chamber is provided. In some aspects, the processing chamber includes a support structure and one or more lifting pins, the support structure being configured to support a substrate within the processing chamber and configured to translate vertically relative to the processing chamber, the lifting pins being configured to facilitate transport of the substrate back and forth across the support structure, the lifting pins extending vertically through holes in the support structure. In some aspects, each of the one or more lifting pins includes an inner shaft and an outer shaft, the inner shaft including a pin head and a lower pin portion, the outer shaft including an outer shaft head surrounding a portion of the inner shaft pin head and a lower surrounding portion surrounding the lower pin portion. In some aspects, the outer shaft head includes a first conductive material.

[0006] In some aspects, a method for processing a substrate is provided. In some aspects, the method includes: placing the substrate on one or more heads of one or more lifting pins extending vertically upward through a hole in a support structure; vertically raising the support structure until the substrate is uniformly supported by the heads of the one or more lifting pins and a support surface area of ​​the support structure; performing a plasma-based process on the substrate; vertically lowering the support structure until the substrate is supported only by the heads of the one or more lifting pins; and removing the substrate from the one or more lifting pins.

[0007] In some aspects, a system for processing a substrate is provided. In some aspects, the system includes a support structure and one or more lifting pins, the support structure being configured to support the substrate within a processing chamber and configured to translate vertically relative to the processing chamber, the lifting pins being configured to facilitate transport of the substrate back and forth across the support structure, the lifting pins extending vertically through holes in the support structure. In some aspects, each of the one or more lifting pins includes an inner shaft and an outer shaft, the inner shaft including a pin head and a lower pin portion, the outer shaft including an outer shaft head surrounding a portion of the inner shaft pin head and a lower surrounding portion surrounding the lower pin portion. In some aspects, the outer shaft head includes a first conductive material. Attached Figure Description

[0008] The aspects and embodiments of this disclosure can be more fully understood from the detailed description and accompanying drawings provided below, which are intended to illustrate the aspects and embodiments by way of example rather than limitation.

[0009] Figure 1 A cross-sectional view of an exemplary processing chamber of an exemplary substrate manufacturing system according to some embodiments of this disclosure is shown.

[0010] Figure 2 The present disclosure illustrates some embodiments of plasma-based processes. Figure 1 A cross-sectional view of an exemplary processing chamber.

[0011] Figure 3 Some embodiments according to this disclosure are shown. Figure 1 An exemplary lifting pin for the processing chamber.

[0012] Figure 4 An exemplary portion of a processing chamber according to some embodiments of this disclosure is shown.

[0013] Figure 5 This is a flowchart illustrating an exemplary method for forming an integral substrate support device for a load lock according to an embodiment of this disclosure.

[0014] Figure 6An embodiment of a computing device associated with a substrate manufacturing system according to some embodiments of this disclosure is shown in graphical representation. Detailed Implementation

[0015] The lifting pins and substrate support assemblies within the processing chamber can be integrated in form and function. For example, during plasma-based processes such as etching, deposition, cleaning, and ashing, plasma can be distributed within the chamber to achieve precise processing. In these processes, a pedestal is a commonly used component to improve the efficiency and speed of plasma-based processes on the substrate. Typically, the substrate support assembly, including the lifting pins, performs the pedestal function or is part of the pedestal function.

[0016] The substrate within a plasma-based processing chamber is typically made of a material that absorbs electromagnetic fields and contacts the substrate to be processed. The substrate can transfer internally generated or plasma-based energy to the substrate. For example, localized heating from the substrate can improve the efficiency of the plasma reaction, resulting in faster etching or deposition rates and more uniform material properties. At other times, the substrate can be electromagnetically coupled to the plasma, allowing for enhanced energy transfer from the plasma to the substrate. For the substrate to remain effective as a tool within a plasma-based processing chamber, uniformity of heating and electromagnetic properties within the substrate is crucial.

[0017] Base efficiency and energy transfer are maximized when the impedance within the base is adequately matched to the rest of the system, or when stray impedance within the base is minimized. Matched impedance ensures efficient absorption of electromagnetic fields by the base, resulting in more efficient and uniform heating, and thus more efficient plasma processes. Impedance is typically introduced through capacitive points within the base, such as air gaps or other insulating or dielectric locations.

[0018] Managing the impedance of the combined lifting pin and substrate support assembly that performs the base function within the cavity presents challenges. For example, shielding is typically used for the lifting pin and support assembly to prevent unwanted interactions with the plasma. Shielding also protects the base from potential damage due to high-energy particles in the plasma. Typically, such shielding is made of materials resistant to plasma erosion and capable of blocking electromagnetic interference (EMI).

[0019] However, the dielectric and insulating properties of the shielding components used to protect the base can introduce additional impedance into the system, which can affect impedance matching. This increased impedance reduces the energy transfer efficiency between the plasma and the base, leading to reduced heating efficiency and potentially non-uniform material properties.

[0020] Therefore, the embodiments described herein address the aforementioned and other challenges by introducing modified substrate support components and lifting pin designs. The proposed design attempts to limit stray capacitance and impedance by eliminating air gaps and reducing the use of dielectric or insulating shielding within the system.

[0021] Figure 1 A cross-sectional view of an exemplary processing chamber of an exemplary substrate manufacturing system according to some embodiments of this disclosure is shown. Manufacturing system 100 (also referred to herein as the “system”) includes a manufacturing system platform 110, which includes a controller 112 and a processing chamber 114.

[0022] In some embodiments, controller 112 may be associated with processing chamber 114. Controller 112 may monitor, adjust, and otherwise control processes and associated components, such as processing chamber 114, associated with manufacturing system 100. In some embodiments, controller 112 and processing chamber 114 may be organized or combined in different configurations. For example, in some embodiments, controller 112 may be integrated with processing chamber 114. In other embodiments, the controller may be on a server or other computing device. In some embodiments, platform 110 may be a server or other similar computing device.

[0023] In some embodiments, the processing chamber 114 may perform plasma-based processes. The processing chamber may be coupled to a plasma source 136 via one or more gas delivery lines 133. The processing chamber 114 may be, for example, a plasma etching reactor, deposition chamber, cleaning chamber, ashing chamber, etc., or any other type of processing chamber commonly used to implement plasma-based processes. The processing chamber may be suitable for etching operations, deposition operations, chamber cleaning operations, plasma processing operations, or any other type of typical operation of a semiconductor manufacturing facility. In embodiments, one or more substrates (e.g., wafers) 146 may be provided within the processing chamber. In embodiments, the processing chamber may be maintained at a pressure suitable for the target operation. In a particular embodiment, the pressure may be between approximately 1 Torr and approximately 200 Torr.

[0024] The processing chamber 114 and / or plasma source 136 may be connected to a controller 112, which controls the processing of the plasma source 136 and / or processing chamber 114 (e.g., by controlling the set point, loading recipe, etc.). One or more flow sensors 138 may be connected to the gas delivery line to detect gas flow characteristics.

[0025] In this embodiment, plasma source 136 is a remote plasma source (RPS) that can generate plasma at a remote location and deliver externally generated plasma to the processing chamber. Alternatively, the processing chamber may include an integrated plasma source (not shown) capable of generating plasma within the processing chamber.

[0026] According to some embodiments, the processing chamber 114 includes a substrate support assembly 152. The substrate support assembly 152 includes a disk 154 (e.g., may include an electrostatic chuck (ESC)). The disk 154 can perform clamping operations, such as vacuum clamping, electrostatic clamping, etc. In embodiments, the disk 154 may further serve as a chamber base. The substrate support assembly 152 may further include a base plate, a cooling plate, and / or an insulating plate (not shown).

[0027] The processing chamber 114 includes a chamber body 140 and a cover 134 that enclose an internal volume 142. The chamber body 140 may be made of aluminum, stainless steel, or other suitable materials. The chamber body 140 generally includes side walls and a bottom. An external gasket ( Figure 1 (Not shown) It may be disposed adjacent to the sidewall, for example, to protect the chamber body 140. This external liner may be made and / or coated with a material resistant to plasma or halogen gases. This external liner may be made or coated with alumina. This external liner may be made or coated with yttrium oxide, yttrium alloys, their oxides, etc.

[0028] An exhaust port 148 may be defined within the chamber body 140 and may couple the internal volume 142 to a pump system 166. The pump system 166 may include one or more pumps, valves, pipelines, manifolds, tanks, etc., all of which are used for evacuation and pressure regulation of the internal volume 142.

[0029] The cover 134 may be supported on the side wall or top of the chamber body 140. The cover 134 may be openable, thereby allowing access to the internal volume 142. When closed, the cover 134 provides a seal for the processing chamber 114. A plasma source 136 may be coupled to the processing chamber 114 to provide processing, cleaning, backblowing, flushing, and other gases and / or plasma to the internal volume 142 via a gas distribution assembly 130. The gas distribution assembly 130 may be integrated with the cover 104.

[0030] Examples of process gases that can be used in the processing chamber 114 include halogen-containing gases such as C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, CH2F3, Cl2, and SiF4. Other reactive gases may include O2 or N2O. Non-reactive gases may be used for rinsing or as carrier gases, such as N2, He, Ar, etc. The gas distribution assembly 130 (e.g., a spray head) may include a plurality of inlets 132 on the downstream surface of the gas distribution assembly 130. The inlets 132 may direct airflow to the surface of the substrate 146. In some embodiments, the gas distribution assembly may include nozzles (not shown) extending through an aperture in the cover 134. A seal may be formed between the nozzle and the cover 134. The gas distribution assembly 130 may be made of and / or coated with a ceramic material (such as silicon carbide, yttrium oxide, etc.) to provide resistance to the processing conditions of the processing chamber 114.

[0031] A substrate support assembly 152 is disposed below the gas distribution assembly 130 within the internal volume 142 of the processing chamber 114. The substrate support assembly 152 can hold the substrate 144 during processing. An inner liner (not shown) can be coated on the periphery of the substrate support assembly. The inner liner can have common characteristics (e.g., manufacturing materials, functions, etc.) with the outer liner 116.

[0032] The substrate support assembly 152 may include a support base 153, an insulating plate, a base plate, a cooling plate, lifting pins 150A to 150D, and a disk 154. The disk 154 may include electrodes 158 for providing one or more functions. The electrodes 158 may include clamping electrodes (e.g., for securing the substrate 146 to the upper surface of the disk 154), heating electrodes, RF electrodes for plasma control, etc.

[0033] A protective ring 156 may be disposed on the outer periphery of the disk 154 above a portion of the disk 154. The disk 154 may be coated with a protective layer. Figure 1 (Not shown in the image). In embodiments, the protective layer may be ceramic, such as Y2O3 (yttrium oxide), Y4Al2O9 (YAM), Al2O3 (aluminum oxide), Y3Al5O 12 YAG, YAlO3 (YAP), quartz, SiC (silicon carbide), Si3N4 (silicon nitride), Sialon, AlN (aluminum nitride), AlON (aluminum oxynitride), TiO2 (titanium dioxide), ZrO2 (zirconia), TiC (titanium carbide), ZrC (zirconia carbide), TiN (titanium nitride), TiCN (titanium nitride carbon), and ZrO2 stabilized with Y2O3 (YSZ), etc. The protective layer can be a ceramic composite material, such as YAG distributed in an alumina matrix, yttrium oxide-zirconia solid solution, silicon carbide-silicon nitride solid solution, or similar materials. The protective layer can also be sapphire or MgAlON.

[0034] The disk 154 may further include multiple gas channels, such as recesses, mesas, and other features that may be formed in the upper surface of the disk 154. The gas channels may be fluidly coupled to a gas source 164. Gas from the gas source 164 may be used as heat transfer or back gas. Multiple gas sources (not shown) may be used. The gas channels may provide a gas flow path for back gas (such as He) through holes drilled in the disk 154. Back gas may be supplied to the gas channels under controlled pressure to enhance heat transfer between the disk 154 and the substrate 144.

[0035] The disk 154 may include one or more clamping electrodes. The clamping electrodes may be controlled by the clamping power supply 160.

[0036] In some embodiments, disk 154 may provide some base functions. For example, clamping electrodes may be further coupled via matching circuitry to one or more RF power supplies 162 for maintaining plasma formed by process gases and / or other gases within the processing chamber 114. The RF power supplies may be capable of generating RF signals with frequencies ranging from about 50 kHz to about 3 GHz and power up to about 40,000 watts. Heating electrodes of disk 154 may be coupled to heater power supplies 162 (RF power supplies 162 may also provide heating energy).

[0037] The controller 112 can control one or more parameters and / or setpoints of the plasma source 136 and / or processing chamber 114. The system controller 112 may be and / or include a computing device, such as a personal computer, server computer, programmable logic controller (PLC), microcontroller, etc. The system controller 112 may include one or more processing devices, which may be general-purpose processing devices, such as microprocessors, central processing units, or the like. More specifically, the processing device may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or combinations of instruction sets. The processing device may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, or the like. System controller 112 may include, or platform 110 may include, data storage devices (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, network interface, and / or other components. System controller 112 may execute instructions to perform any one or more of the methods and / or embodiments described herein. Instructions may be stored on a computer-readable storage medium, which may include main memory, static memory, secondary storage devices, and / or processing devices (during instruction execution). In an embodiment, execution of instructions by system controller 176 causes system controller 176 to raise and lower support assembly 152 and base, which will target Figure 2 Further discussion. In an embodiment, system controller 112 may receive measurements of flow parameters (e.g., pressure, flow rate, etc.) from one or more flow sensors and may adjust one or more properties or settings (e.g., plasma power) of plasma source 136 in response to measured free radical concentrations. System controller 112 may also be configured to allow human operators to input and display data, operating commands, and the like.

[0038] In embodiments, data captured from sensors such as sensor 138 may reflect a variety of data associated with processing chamber 114. For example, in embodiments, sensors within the processing chamber may capture pressure, temperature, gas flow rate, or any other data typically captured in plasma-based processing chambers.

[0039] In some embodiments, when the substrate is moved into the processing chamber, for example, through door 144A or door 144B, the substrate will be received on lifting pins 150A to 150D (e.g., Figure 1 (As seen in the configuration). After the substrate has been received, the support assembly 152 and the base 153 can be raised to remove the substrate (as will be seen in the configuration). Figure 2 (As seen in the configuration). A process can then be implemented. In some embodiments, after the process has been completed, the support assembly 152 can be lowered, and a lifting pin can lift the substrate away from the lifting pin. This lifting facilitates removal from the chamber. In an embodiment, the support assembly 152 and the disk 154 can be matched with the lifting pin at a height relative to the chamber.

[0040] Figure 2 Some embodiments of the present disclosure are shown during plasma-based processes. Figure 1 A cross-sectional view of an exemplary processing chamber.

[0041] In some embodiments, the processing chamber 200 may correspond to or be similar to Figure 1 The processing chamber 114 seen and described herein, and in combination with and expanded upon at least the embodiments described herein. Figure 1 Some components found in chamber 114, such as the gas distribution system, flow inlet, and exhaust system, have been removed from... Figure 2 The exemplary processing chamber 200 seen in the diagram has been removed. This does not imply limitation of this disclosure or removal of its presence from the exemplary processing chamber 200. The components are excluded merely for the purpose of simplifying the drawings and disclosure relative to other components. It should be understood that the processing chamber may still include... Figure 2 These and other features are not shown in the diagram. Nevertheless, in embodiments, such as Figure 2 As can be seen, some components of chamber 200, such as chamber body 240, internal volume 242, disk 254, base plate 246, and lifting pins 250A to 250D, can still correspond to or be similar to those of chamber 200. Figure 1 The components of chamber 114 seen and described herein, and in combination with and expanded upon at least the embodiments described herein.

[0042] For example, in Figure 2In this chamber, a cover, gas distribution system, and flow inlet (not shown for simplicity) facilitate plasma-based processes within the internal volume 242 of the chamber body 240 of chamber 200, the processes including plasma 268. Within the chamber, substrate support assembly 252 and disk 254 can be raised to accommodate heights from lifting pins 250A to 250D. (As will be stated in...) Figure 4 As further described herein, in an embodiment, substrate 246 may be placed equally on both disk 254 and lifting pins 250A to 250D.

[0043] In embodiments, the disk 254 and lifting pins 250A to 250D can serve a dual function within the chamber 200. For example, the disk 254 can first provide a stable platform for holding the substrate, and can also act as a base to improve the efficiency of the plasma process. In embodiments, the disk 254 can be a passive or active base. For example, in some embodiments, the disk 254 may include electrodes that perform heating or electrical functions. Figure 2 (Not shown in the image). In an embodiment, the disk 254 may be made of a thermally and electrically conductive material, such as aluminum, graphite, etc. For example, regarding... Figure 1 As discussed, disk 254 may be coated with a protective layer of a material such as silicon carbide to prevent corrosion, contamination, etc.

[0044] In one embodiment, when radio frequency (RF) power is applied to the chamber, the disk 254 can further act as a base and couple with the electromagnetic field generated by the plasma. This coupling allows the disk to absorb energy from the plasma and distribute the energy uniformly across the entire substrate. In another embodiment, this energy absorption can lead to localized heating, which can enhance the efficiency of plasma-based processes in the chamber (e.g., chemical vapor deposition (CVD), atomic level deposition (ALD), plasma etching, etc., as discussed above). Therefore, for quality and consistency, uniform heat distribution is crucial to ensuring uniform plasma-based processes across the entire substrate.

[0045] In another embodiment, disk 254 is an active substrate. Disk 254 can be electrically biased via internal electrodes to control the energy distribution of ions impacting the substrate. By applying a voltage to the disk, disk 254 can attract ions from the plasma to the substrate with a predetermined kinetic energy, thereby allowing for more precise control over etching rates, deposition characteristics, etc.

[0046] In this embodiment, the capacitance and impedance between the components associated with the lifting pins 250A to 250D and the disk 254 can significantly affect the efficiency of the plasma-based process. Specifically, irregular capacitive locations within the disk can introduce impedance into the system.

[0047] As discussed, in the embodiments, lifting pins 250A to 250D can be used to lift the substrate, for example, during loading, unloading, cooling, etc. Figure 2 As seen in the diagram, these lifting pins introduce geometric and electrical irregularities into the base characteristics of disk 254. These irregularities particularly affect the impedance within the disk. For example, lifting pins 250A to 250D can be made from any combination of conductive and non-conductive materials. Figure 3 As further discussed, conductive materials such as stainless steel and aluminum can be used. Non-conductive materials (such as ceramics or polymers) can be used in conjunction with conductive materials. These materials can introduce different electrical and thermal properties compared to the material of disk 254. Furthermore, any air gaps in the geometry or space between the lifting pin and the disk can further act as insulation, thereby introducing capacitance and impedance into the system. Some of the local capacitances will be described with reference to capacitors C1 to C4, such as... Figure 2 I saw it in the middle.

[0048] In embodiments where RF power is applied to generate plasma 268 (in alternative embodiments, the plasma may already be generated elsewhere), the electromagnetic field can interact with all the aforementioned conductive and capacitive components within the chamber. The different materials introduced via the lifting pins can create localized variations or inhomogeneities in the electromagnetic field, resulting in a non-uniform impedance distribution across the entire disk 254. These irregularities can lead to non-uniform power coupled to the plasma, which can affect the uniformity and quality of plasma-based processes.

[0049] For example, when the lifting pin retracts, as in Figure 2 In the embodiment shown, the lifting pin can retract into a recess within the top surface of the disk 254. Irregularities within the fitting between the lifting pin and the disk can introduce stray capacitance and stray impedance into the system.

[0050] For example, in embodiments where the lifting pins are misaligned, misplaced, or air gaps are introduced between the substrate support assembly or the substrate, these factors can create localized temperature or energy field variations within the cavity. This can alter thermal and energy uniformity, and thus introduce irregularities in the field, process, and finished substrate.

[0051] In this embodiment, air gaps and different materials can introduce irregular capacitance and therefore impedance into the system. This increased capacitance alters the resonant frequency of the substrate support assembly 252, making it more challenging to maintain stable and uniform plasma conditions. Stray capacitance can cause unpredictable changes in the overall electrical behavior of the plasma processing system.

[0052] like Figure 2 As seen, some introduced capacitances in the system can be characterized or reduced. Other capacitances will be inherent. For example, capacitors C1 through C4 may be included in the system. Capacitor C1 may originate from the substrate itself and may be inherent to the system based on the substrate composition (e.g., glass or silicone). Capacitor C2 may originate from any air gap between the top of the lifting pin and the substrate. This capacitance can be reduced or eliminated. In an embodiment, this capacitance can be removed by ensuring that the top of the pin precisely mates with the substrate above it. If the top of the lifting pin has been anodized, capacitance C3 may be generated due to this anodized layer on the lifting pin. Similarly, if the lifting pin has an outer layer elsewhere (e.g., any shielding, anodizing, ceramic protective layer, etc.), the outer layer contacting the disk 254 at other locations may introduce capacitance C4. This capacitance can be reduced or eliminated. These irregularities and methods for reducing them will be addressed. Figures 3 to 4 Further description.

[0053] Therefore, the material composition, spacing, fit, and geometry of the lifting pins 250A to 250D and the disk 254 will affect the efficiency of capacitance, impedance, energy coupling, and the processing chamber.

[0054] Figure 3 Some embodiments according to this disclosure are shown. Figure 1 An exemplary lifting pin for the processing chamber.

[0055] In some embodiments, the lifting pin 300 may include an inner shaft 302 and an outer shaft 304. In one embodiment, the inner shaft may be axially displaced relative to the outer shaft. In another embodiment, the inner shaft may include a pin head 310 and pin sections 312A and 312B extending axially through the lifting pin. The outer shaft may include a base 340, a section 322, and an outer shaft head 320.

[0056] In one embodiment, the inner shaft 302 can be moved upward by a pair of similarly polarized permanent magnets 330A to 330B placed at the base of the lifting pin. In some embodiments, the permanent magnets may introduce a gap D1 between the ends of the inner shaft 302 and the outer shaft 304. In another embodiment, this gap D1 may be reduced when downward pressure or weight is applied to the pin head 310 of the inner shaft 302.

[0057] In some embodiments, magnets 330A to 330B may be any type of repulsive magnet, including electromagnets, superconducting magnets, Heilbeck arrays, hybrid magnets, or any other type of repulsive magnet commonly used in substrate manufacturing systems.

[0058] In one embodiment, the inner shaft 302 may be divided into multiple segments. In another embodiment, it may include three pin segments 310, 312A, and 312B (including pin heads). The pin segments may interface at mating surfaces 314A and 314B of the inner shaft. In an alternative embodiment, more than three pin segments may be used. In an alternative embodiment, permanent magnets 330A to 330B may be placed at any alternative interface location, including... Figure 3 Such configurations not seen in the text (e.g., when the inner axis is divided into 4, 5, or any number of segments).

[0059] In this embodiment, the sections of the pin can generally be used to limit heat transfer across the entire inner shaft and lifting pin. Heat can be transferred to the lifting pin when the pin head 310 contacts the substrate and the outer shaft head 320 contacts the support assembly. Therefore, more than three sections may be included to limit heat transfer. This limitation of heat transfer can be used to protect components within the pin 300. This may include protecting permanent magnets from thermal damage.

[0060] In a similar manner, in this embodiment, the outer shaft 304 may be divided into longitudinal segments. In this embodiment, the outer shaft 304 may be segmented into an outer shaft head 320, a lower segment 322, and a base 340.

[0061] In some embodiments, the inner shaft may include permanent magnets 330A to 330B of similar polarization, which provide a separating force on the inner shaft. In an embodiment, the force provided by the permanent magnets 330A to 330B can propel the inner shaft 302 upward a distance D1.

[0062] In one embodiment, a permanent magnet may be placed at the bottom of the lifting pin to limit heat from entering the pin at the pin head 310 and causing damage. In another embodiment, the permanent magnet may be placed at the contact surface 314B or contact surface 314A, and the section may be lengthened to properly position the permanent magnet to prevent damage caused by heat.

[0063] In some embodiments, any section of the inner or outer shaft may be made of different materials. For example, in one embodiment, the outer shaft may be made of two different materials. The outer shaft head 320 may be made of a conductive material, such as aluminum, with the intention of minimizing or eliminating the resistance or impedance between the outer shaft head 320 and the disk (as will be...). Figure 4 (See in the middle).

[0064] Typically, in plasma-based processing chambers, ceramic materials are used to shield components and control the electrical properties of the chamber. Ceramics offer resistance and protection against the various processes that frequently occur within the chamber. Ceramic materials generally have high dielectric constants, meaning that a significant amount of charge and a relatively high level of impedance can be introduced into the system. As discussed earlier, this impedance affects the controlled generation and maintenance of plasma within the chamber, thereby influencing parameters such as plasma density, homogeneity, and energy distribution.

[0065] Replacing the dielectric ceramic at the outer shaft tip with a conductive material such as aluminum can significantly reduce this impedance. This allows for more efficient coupling of electrical power into the plasma, effectively resulting in higher plasma density and greater uniformity within the plasma field.

[0066] Furthermore, reduced impedance at the contact points can also mean less energy loss in the form of heat or electromagnetic radiation, thereby improving the overall energy efficiency of the plasma-based processing chamber.

[0067] Therefore, in embodiments, the lifting pin can incorporate a variety of materials. In embodiments, the outer shaft head 320 of the pin can be aluminum or another similar conductive material, while the lower portion of the outer shaft 304 can be ceramic, a polymer, or any other heat-resistant material typically used in plasma-based processing chambers.

[0068] In some embodiments, any of the above-described portions or components may include a plasma-resistant coating, such as a ceramic coating or any other type of plasma-resistant coating, to improve durability in plasma environments.

[0069] Those skilled in the art who benefit from this disclosure will recognize that the inner and outer shafts of pin 300 are available in various materials, configurations, and lengths and sections, and that the aforementioned configurations and materials are illustrative representations of possible configurations of the lifting pin and the lifting pin associated with the system.

[0070] Figure 4 An exemplary portion of a processing chamber according to some embodiments of this disclosure is shown.

[0071] In some embodiments, Figure 4 The components seen in part 400 (such as disk 454, substrate 446, lifting pins 401A to 401B, etc., and chamber body 440) may correspond to or be similar to any subset of disks 154, 254, substrates 146, 246, lifting pins 150A to 150D, 250A to 250D, 300, etc., and chamber bodies 140 and 240, such as Figures 1 to 3 The embodiments described herein are seen and described, and are combined with and expanded upon.

[0072] like Figure 4As seen in the image, the exemplary portion 400 may include a portion of a disk 454 (and a corresponding substrate support assembly) and two lifting pins 401A to 401B extending through the portion of the disk 454. The bases of the lifting pins 401A to 401B may rest on a portion of the chamber body 440. The substrate 446 (or the portion seen) may rest on the lifting pin 401B, but not on the pin 401A.

[0073] like Figure 4 As seen in the diagram, the weight of the substrate 446 is sufficient to compress the inner shaft 402B of the pin 401B, reducing the distance between the two magnets at the base of the pin 401B to D2. As seen in the pin 401A, D1 may be smaller than the uncompressed distance D1.

[0074] like Figure 4 As seen, the pin head 410B is pushed downwards due to the weight of the substrate. When this occurs, the repulsive force from the magnet at the base may become greater, potentially pressing the pin head against the bottom surface of the substrate 446. In this embodiment, the top surface of the pin head interacts uniformly with the underside of the substrate. Therefore, the repulsive force from the magnet helps to reduce or eliminate the air gap between the pin head 410B and the substrate 446. This feature helps to remove the inductive resistance from the system's capacitor C2.

[0075] In addition, Figure 4 In the image, a minute gap can be seen between the pin head 410B and the surrounding portion of the disk 454. This is in... Figure 4 The illustrations are for the reader's convenience and for simplicity. In practice, the air gap can be eliminated as much as possible so that the pin head 410B and the outer shaft head 420B are firmly pressed against the surrounding body of the disk 454 and the substrate 446. Therefore, the air gap between the disk 454, the substrate 446 and the compressed lifting pin 401B may be limited.

[0076] For example, regarding Figure 3 As discussed, in the embodiments, both the pin head 410B and the outer shaft head 420B of pin 401B can be made of a conductive material, such as aluminum, so as to remove the impedance of the capacitor C4 at the contact from the system.

[0077] Similarly, the impedance introduced by the shielding material and the capacitance C4 of the outer shaft head 420B can be reduced or eliminated by its material composition.

[0078] Pin 401A may include similar components and materials as described for pin 401B. However, pin 401A may be shown as a lifting pin in an uncompressed state, such that a repulsive magnet in the base provides a lifting distance D1 to the inner shaft and pin head 410A. In an embodiment, pin 401A may similarly act on vertical weight and be compressed in a manner similar to that seen for pin 401B.

[0079] In an embodiment, all lifting pins associated with a disk (e.g., disk 454) may be operated in series, and the mismatched configuration of pins 401A and 401B may be considered merely exemplary.

[0080] As in Figures 1 to 2 As seen and discussed in the present disclosure, the disk may include four lifting pins that extend through holes within the disk to engage with the substrate. Those skilled in the art who will benefit from this disclosure will understand that the disk and pins are three-dimensional, and that there are numerous three-dimensional spatial arrangements, configurations, placement heights, apertures, quantities, etc., for the pins, the disk, and the entire substrate support assembly. Those skilled in the art who will benefit from this disclosure will understand that, as Figure 4 The layout and configuration seen in Figures 1 to 3 Similar components are illustrative representations of disks, support components, and lifting pins associated with the system, and other variations or embodiments are possible.

[0081] Figure 5 This is a flowchart illustrating an exemplary method for forming an integral substrate support device for a load lock according to an embodiment of this disclosure.

[0082] Figure 5 A method 500 that can be performed by a manufacturing apparatus is shown, the manufacturing apparatus including hardware, software, or a combination of both. The manufacturing apparatus may utilize a processing chamber, one or more controllers, and a substrate support device including one or more lifting pins and a disk.

[0083] In block 510, method 500 may include placing a substrate on a lifting pin. In some embodiments, block 510 may further include placing the substrate on one or more pin heads of one or more lifting pins that extend vertically upward through the disk hole.

[0084] In block 512, method 500 may include bringing the lifting pin into a compressed state. In some embodiments, block 512 may further include bringing the lifting pin into a compressed state, wherein the pin head of the inner shaft extends beyond the longitudinal distance of the outer shaft head of the outer shaft.

[0085] In block 520, method 500 may include a raising disk. In some embodiments, block 520 may further include a vertically raising disk until the substrate is uniformly supported by the pin heads of one or more lifting pins and the support surface area of ​​the disk.

[0086] In block 522, method 500 may include raising the disk until the support surface area is flush with the pin head. In some embodiments, block 522 may further include vertically raising the disk until the support surface area is flush with the pin head of the lifting pin when the lifting pin is in a compressed state.

[0087] In block 530, method 500 may include performing a plasma-based process. In some embodiments, block 530 may further include performing a plasma-based process on a substrate.

[0088] In block 532, method 500 may include an electromagnetically coupled disk. In some embodiments, block 532 may further include electromagnetically coupling the disk and one or more lifting pins to the plasma.

[0089] In block 540, method 500 may include a lowering disk. In some embodiments, block 540 may further include a vertically lowering disk until the substrate is supported only by the pin heads of one or more lifting pins.

[0090] In block 550, method 500 may include removing a substrate. In some embodiments, block 550 may further include removing the substrate from one or more lifting pins.

[0091] Figure 6 An embodiment of a computing device associated with a substrate manufacturing system according to some embodiments of this disclosure is shown in graphical representation.

[0092] Figure 6 Processing device 600 is indicated, and may be part of any computing device associated with any of the foregoing diagrams or any combination thereof. Exemplary processing device 600 may be connected to other processing devices in a LAN, internal network, external network, and / or the Internet. Processing device 600 may be a personal computer (PC), set-top box (STB), server, internal network router, switch, or bridge, or any device capable of executing a set of instructions (sequentially or otherwise) specifying the actions to be taken by said device. Furthermore, although only a single exemplary processing device is shown, the term "processing device" should also be considered to include any collection of processing devices (e.g., computers) that individually or jointly execute a set (or more) of instructions to perform any of the methods discussed herein.

[0093] An exemplary processing device 600 may include a processor 602 (e.g., a CPU), a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM)), a static memory 606 (e.g., flash memory, static random access memory (SRAM)), and a secondary memory (e.g., a data storage device 618), all of which may communicate with each other via a bus 630.

[0094] Processor 602 represents one or more general-purpose processing devices, such as microprocessors, central processing units, or the like. More specifically, processor 602 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a processor implementing other instruction sets, or a processor implementing combinations of instruction sets. Processor 602 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, or the like. According to one or more aspects of this disclosure, processor 602 may be configured to execute instructions (e.g., instruction 622 may include at least...). Figure 1 (The computing subsystem or controller seen in the image).

[0095] The exemplary processing device 600 may further include a network interface device 608 communicatively coupled to a network 620. The exemplary processing device 600 may further include a video display 610 (e.g., a liquid crystal display (LCD), a touchscreen, or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), an input control device 614 (e.g., a cursor control device, a touchscreen control device, a mouse), and a signal generation device 616 (e.g., a speaker).

[0096] Data storage device 618 may include computer-readable storage medium (or more specifically, non-transitory computer-readable storage medium) 628 thereon storing one or more sets of executable instructions 622. According to one or more aspects of this disclosure, the executable instructions 622 may include executable instructions.

[0097] During execution by the exemplary processing device 600, the executable instructions 622 may also reside wholly or at least partially in the main memory 604 and / or the processor 602, which also constitute computer-readable storage media. The executable instructions 622 may further be transmitted or received over a network via the network interface device 608.

[0098] Although computer-readable storage media 628 in Figure 6 The illustration depicts a single medium, but the term "computer-readable storage media" should be understood to include single or multiple media (e.g., centralized or distributed databases, and / or associated caches and servers) that store one or more sets of operating instructions. The term "computer-readable storage media" should also be understood to include any media capable of storing or encoding a set of instructions executable by a machine, which causes the machine to perform any one or more of the methods described herein. Therefore, the term "computer-readable storage media" should be understood to include, but is not limited to, solid-state storage and optical and magnetic media.

[0099] It should be understood that the above description is for illustrative purposes only and not for limiting purposes. Many other examples of embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Although specific examples are described in this disclosure, it will be appreciated that the systems and methods of this disclosure are not limited to the examples described herein, but can be implemented with modifications within the scope of the appended claims. Therefore, the specification and drawings should be considered illustrative rather than limiting. Consequently, the scope of this disclosure should be determined by reference to the appended claims and the full scope of their equivalents.

[0100] The embodiments of the methods, hardware, software, firmware, or code described above may be implemented by instructions or code stored on a machine-accessible, machine-readable, computer-accessible, or computer-readable medium, which may be executed by a processing component. "Storage" includes any mechanism that provides (i.e., stores and / or transmits) information in a machine-readable form, such as a computer or electronic system. For example, "storage" includes random-access memory (RAM), such as static RAM (SRAM) or dynamic RAM (DRAM); ROM; magnetic or optical storage media; flash memory devices; electrical storage devices; optical storage devices; acoustic storage devices; and any type of tangible machine-readable medium suitable for storing or transmitting electronic instructions or information in a machine-readable (e.g., computer) form.

[0101] The terms "an embodiment" or "one embodiment" as used in this specification mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of this disclosure. Therefore, the appearance of the phrase "in one embodiment" or "in one embodiment" throughout this specification does not necessarily refer to the same embodiment. Furthermore, in one or more embodiments, a particular feature, structure, or characteristic may be combined in any suitable manner.

[0102] In the foregoing description, detailed description has been given with reference to specific exemplary embodiments. However, it will be apparent that various modifications and changes can be made thereto without departing from the broader spirit and scope of this disclosure as set forth in the appended claims. Therefore, this specification and drawings should be regarded as illustrative rather than restrictive. Furthermore, the foregoing use of embodiments, examples, and / or other illustrative language does not necessarily refer to the same embodiments or the same instances, but may refer to different and distinct embodiments, as well as potentially identical embodiments.

[0103] The terms “exemplary” or “illustrative” as used herein mean as an example, instance, or illustration. Any aspect or design described herein as “exemplary” or “illustrative” is not necessarily to be construed as superior or advantageous to other aspects or designs. Rather, the use of the terms “exemplary” or “illustrative” is intended to present concepts in a specific manner. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” That is, unless otherwise stated or obvious from the context, “X includes A or B” is intended to mean any natural inclusive arrangement. That is, if X includes A; X includes B; or X includes both A and B, then “X includes A or B” is satisfied in any of the foregoing cases. Furthermore, the articles “a” and “an” as used in this application and the appended claims should generally be considered to mean “one or more” unless otherwise stated or obvious from the context to refer to the singular form. Additionally, the use of the terms “an embodiment” or “one example” or “one embodiment” throughout the text is not intended to mean the same embodiment or example unless so described. Furthermore, the terms “first,” “second,” “third,” “fourth,” etc., as used herein, are intended as labels to distinguish different components and do not necessarily have an ordering meaning based on their numerical names.

[0104] Digital computer programs (also referred to or described as programs, software, software applications, modules, software modules, scripts, or code) can be written in any form of programming language, including compiled or interpreted languages, or declarative or programming languages, and can be deployed in any form, including as standalone programs or modules, components, subroutines, or other units suitable for digital computing environments. The basic components of a digital computer are: a central processing unit (CPU) for performing or executing instructions, and one or more memory devices for storing instructions and digital data. The CPU and memory may be supplemented or incorporated into a dedicated logic circuit system or a quantum simulator. Typically, a digital computer will also include one or more large storage devices for storing digital data, or devices operatively coupled to receive digital data from or transfer digital data to said large storage devices, or both, such as magnetic disks, magneto-optical disks, optical disks, or systems suitable for storing information. However, digital computers do not require such devices.

[0105] Digital computer-readable media suitable for storing digital computer program instructions and digital data include all forms of non-volatile digital storage, media and storage devices, such as semiconductor storage devices, such as EPROM, EEPROM and flash memory devices; magnetic disks, such as internal hard disks or removable disks; magneto-optical disks; CD-ROM and DVD-ROM discs.

[0106] Control of the various systems or portions thereof described in this specification may be implemented in a digital computer program product, the product including instructions stored on one or more non-transitory machine-readable storage media and executable on one or more digital processing devices. The systems or portions thereof described in this specification may each be implemented as an apparatus, method, or system, the system including one or more digital processing devices and memory for storing executable instructions to perform the operations described in this specification.

[0107] Although this specification contains details of numerous specific embodiments, these details should not be construed as limiting the claimed scope, but rather as descriptions of specific features of particular embodiments. Certain features described in this specification within the context of independent embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented individually or in any suitable sub-combination in multiple embodiments. Furthermore, although features may be described above as functioning in certain combinations, and even initially claimed to be so, one or more features from the claimed combination may be removed from said combination in some cases, and the claimed combination may involve sub-combinations or variations thereof.

[0108] Similarly, although the diagrams show operations in a specific order, this should not be construed as requiring the execution of such operations in the shown specific order or in a sequential order, or requiring the execution of all shown operations to achieve the desired result. In some cases, multitasking and parallel processing may be advantageous. Furthermore, the separation of the various system modules and components in the above embodiments should not be construed as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

[0109] Specific embodiments of the subject matter have been described. Other embodiments fall within the scope of the following claims. For example, the actions described in the claims can be performed in different orders and the desired result can still be obtained. For example, the process illustrated in the accompanying drawings does not necessarily require the specific order or sequential order shown to achieve the desired result. In some cases, multitasking and parallel processing may be advantageous.

Claims

1. A processing chamber, comprising: A support structure is configured to support a substrate within the processing chamber and is configured to translate relative to the processing chamber in a vertical direction. and One or more lifting pins are configured to facilitate the transfer of the substrate back and forth through the support structure and extend vertically through a hole in the support structure, wherein each of the one or more lifting pins includes: Inner shaft, including the pin head and the lower pin portion; and The outer shaft includes an outer shaft head that surrounds a portion of the inner shaft pin head, and a lower surrounding portion that surrounds the lower pin portion; The outer shaft head includes a first conductive material.

2. The processing chamber of claim 1, wherein the processing chamber is configured to perform a plasma-based process on the substrate, the plasma-based process including at least one of a deposition process, an etching process, an ashing process, or a cleaning process.

3. The processing chamber according to claim 1, wherein the support structure and one or more pin heads of the one or more lifting pins are configured to serve as a base in a plasma-based process within the processing chamber.

4. The processing chamber of claim 1, wherein the support structure includes one or more electrodes configured to perform at least one of clamping, heating, or providing radio frequency (RF) energy.

5. The processing chamber according to claim 1, wherein the head of each of the one or more lifting pins comprises a second conductive material.

6. The processing chamber of claim 1, wherein each of the one or more lifting pins further comprises: A first repulsive magnet is coupled to a base in the outer shaft that is longitudinally opposite to the head of the outer shaft. and A second repulsive magnet is coupled to the end of the inner shaft that is longitudinally opposite to the pin head. The first and second repulsive magnets provide a force that causes the pin head of the inner shaft to protrude longitudinally from the outer shaft head of the outer shaft by a first distance.

7. The processing chamber of claim 6, wherein the weight of the substrate resting on the head of the lifting pin causes the lifting pin to compress, such that the first distance by which the head of the inner shaft protrudes from the head of the outer shaft is reduced to a second distance.

8. The processing chamber according to claim 1, wherein the substrate is placed on the one or more lifting pins, and the support structure is vertically translated such that the top surface of the support structure and the top surfaces of the one or more lifting pins are at the same vertical height, wherein the top surface of the support structure and the top surfaces of the one or more lifting pins uniformly contact the lower side of the supported substrate.

9. The processing chamber according to claim 1, wherein one or more lifting pins include a first surface that uniformly contacts the second surface of the support structure.

10. The processing chamber of claim 1, wherein the lower surrounding portion of the outer shaft may be the same as or different from the first material.

11. The processing chamber of claim 1, wherein each of the one or more lifting pins includes an inner shaft, the inner shaft including one or more longitudinal sections.

12. The processing chamber of claim 11, wherein the one or more longitudinal sections may be made of any kind of material, including ceramic, metal or plastic.

13. A method for processing a substrate, comprising the following steps: Place the substrate on the head of one or more lifting pins that extend vertically upward through the hole in the support structure. The support structure is raised vertically until the substrate is uniformly supported by the pin heads of the one or more lifting pins and the support surface area of ​​the support structure. A plasma-based process is performed on the substrate; Lower the support structure vertically until the substrate is supported only by the pin heads of the one or more lifting pins; and Remove the substrate from one or more lifting pins.

14. The method of claim 13, wherein each of the one or more lifting pins includes an inner shaft and an outer shaft, wherein the inner shaft includes the pin head, wherein in the uncompressed state of the lifting pin, the pin head extends beyond the outer shaft head of the outer shaft by a first longitudinal distance.

15. The method of claim 14, wherein the inner shaft comprises one or more longitudinal segments.

16. The method of claim 14, wherein the outer shaft includes a first repulsive magnet coupled to a base of the outer shaft opposite to the head of the outer shaft, wherein the inner shaft includes a second repulsive magnet coupled to an end of the inner shaft opposite to the head of the pin, wherein the first and second repulsive magnets provide a force to raise the inner shaft such that the head of the pin extends beyond the head of the outer shaft to the first longitudinal distance.

17. The method of claim 16, wherein the step of placing the substrate on one or more pin heads of the one or more lifting pins causes the lifting pins to enter a compressed state, wherein the first longitudinal distance is shortened to a second longitudinal distance, and the total longitudinal length of each lifting pin is reduced.

18. The method of claim 17, wherein the step of vertically raising the support structure until the substrate is uniformly supported comprises the following steps: The support structure is raised vertically until the support surface area is flush with the head of the lifting pin when the lifting pin is in the compressed state.

19. The method of claim 17, wherein the step of performing a plasma-based process on the substrate comprises the following steps: The support structure and the one or more lifting pins are electromagnetically coupled to the plasma.

20. A system for processing a substrate, comprising: A support structure is configured to support a substrate within the processing chamber and is configured to translate relative to the processing chamber in a vertical direction. and One or more lifting pins, the lifting pins being configured to facilitate the transfer of the substrate back and forth through the support structure and extending vertically through a hole in the support structure, wherein each of the one or more lifting pins includes: Inner shaft, the inner shaft including a pin head and a lower pin portion; and An outer shaft, the outer shaft including an outer shaft head surrounding a portion of the inner shaft pin head, and a lower surrounding portion surrounding the lower pin portion; The outer shaft head includes a first conductive material.

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