Epitaxial wafer photoluminescence test data processing method and system

By combining photoluminescence testing with microscopic image verification, the problem of single-dimensional analysis in epitaxial wafer photoluminescence testing was solved, enabling multi-dimensional evaluation of epitaxial wafer quality and improving accuracy.

CN122171506APending Publication Date: 2026-06-09ZHEJIANG LISHUI XIN WAFER SEMICON TECH CO LTD
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Patent Information

Application Number
CN202610256607.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-04
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing epitaxial wafer photoluminescence testing only analyzes spectral intensity and peak position, which cannot accurately assess the quality of epitaxial wafers and lacks an effective verification mechanism, resulting in unreliable test results.

Method used

A spectral atlas was obtained through photoluminescence testing. The intensity of several wavelengths at different locations was randomly selected, and the rate of change of wavelength intensity was calculated to predict roughness. The results were then verified using microscopic images. Multidimensional analysis and confidence compensation methods were employed to improve the accuracy of the assessment.

Benefits of technology

This method enables quantitative assessment of the surface roughness of epitaxial wafers, improves the reliability and accuracy of quality assessment, and provides more comprehensive epitaxial wafer quality assessment results.

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Abstract

The invention provides an epitaxial wafer photoluminescence test data processing method and system, and belongs to the field of new material detection. The method comprises the following steps: carrying out a photoluminescence test on a target epitaxial wafer to obtain a spectral image set, and obtaining a plurality of wavelength intensity sets; processing to obtain a plurality of wavelength intensity discrete parameters, and predicting the roughness of the epitaxial wafer to obtain the roughness of the first epitaxial wafer; a microscopic image is collected, the roughness of the second epitaxial wafer is recognized and obtained, and the test confidence coefficient is obtained; and carrying out epitaxial wafer quality analysis to obtain initial epitaxial wafer quality parameters, and carrying out confidence compensation based on the test confidence to obtain epitaxial wafer quality parameters. The technical problem that in the prior art, only the spectral intensity and the peak position are analyzed in epitaxial wafer photoluminescence test data processing, and the epitaxial wafer quality cannot be accurately evaluated is solved, and the technical effects that the surface roughness is predicted through multi-wavelength intensity discreteness analysis, microscopic image verification is combined, and the epitaxial wafer quality evaluation accuracy is improved are achieved.
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