Topological heterostructure and sensing detection method

By designing a topological heterostructure and utilizing the phase compensation effect and anomalous dispersion characteristics of the HMM layer and the dielectric layer, the angle dependence problem of traditional photonic crystals is solved, realizing omnidirectional dispersion-free bandgap and high-sensitivity sensing and detection, which is suitable for integrated photonic chips and complex sensing environments.

CN122172378APending Publication Date: 2026-06-09TONGJI UNIV
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Patent Information

Application Number
CN202610584496.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-29
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

The bandgap edge of traditional one-dimensional all-dielectric photonic crystals shifts towards higher frequencies as the incident angle increases, resulting in a severe angle dependence. Existing dispersionless bandgap solutions rely on materials with negative refractive index or negative magnetic permeability, making them difficult to achieve.

Method used

A topological heterostructure is designed by alternating stacking of HMM layers and dielectric layers. The anomalous dispersion characteristics of HMM are used to compensate for the phase shift of the dielectric layer, forming an omnidirectional dispersion-free bandgap. Topologically protected local interface states are constructed at the interface, and phase singularities are used for sensing and detection.

Benefits of technology

Achieving a constant frequency omnidirectional dispersion-free bandgap over a wide incident angle range improves sensing sensitivity and detection accuracy, resists structural disturbances, and maintains a high signal-to-noise ratio.

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Abstract

The invention relates to a topological heterostructure and a sensing detection method, the topological heterostructure comprises a first photonic crystal region and a second photonic crystal region, and the first photonic crystal region and the second photonic crystal region are adjacently connected to form an interface; wherein the first photonic crystal region and / or the second photonic crystal region comprise / comprises at least one structural unit formed by alternately stacking HMM layers and dielectric layers, and the thicknesses of the HMM layers and the dielectric layers meet the condition that the positive phase change provided by the abnormal dispersion of the HMM layers effectively compensates the negative phase shift generated by the dielectric layers along with the increase of an incident angle; therefore, a stable omni-directional dispersion-free band gap is obtained in a wide incidence angle range. Furthermore, a local interface state is formed at the interface based on the topological difference of the two photonic crystal regions, and the topological heterostructure is designed to be that the local interface state has a phase singular point in a reflection spectrum. Dependence on negative magnetic conductivity is avoided, the system is endowed with the capability of resisting structural disturbance, and high-sensitivity sensing detection can be realized based on phase singular points.
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