Packaging structure and packaging method

Abstract

The application provides a packaging structure and a packaging method, and relates to the packaging field.The packaging structure comprises a gas storage body, a component to be packaged and a packaging unit;the gas storage body and the component to be packaged are arranged in a packaging cavity formed by the packaging unit;the gas storage body is configured to store target gas, and is connected with the packaging cavity in a preset state.The packaging structure and method of the application embodiment ensure the purity of the target gas and the stability of the component in the packaging process through a high-vacuum environment and precise gas release control, avoid the influence of impurity gas, waste gas in welding and overheating and the like, and thus improve the packaging quality, the reliability of the component and the stability in long-term use.

Description

Technical Field

[0001] This application relates to the field of packaging, and more specifically, to a packaging structure and packaging method. Background Technology

[0002] With the continuous development of science and technology and industry, the demand and requirements for packaging technology are increasing across all sectors. Especially in high-precision fields such as semiconductors, sensors, and aerospace, packaging technology has become one of the key factors in ensuring product performance and reliability.

[0003] Current semiconductor packaging typically operates in an inert gas atmosphere, such as nitrogen, and relies on equipment with vacuum and soldering capabilities to prevent oxidation and corrosion of components and soldered areas. However, with the increasing demands of measurement and control technologies and sensors, packaging structures not only need to maintain a low-vacuum environment but may also require the encapsulation of special gases at specific pressures. These gases may serve as reference gases, be used for measurement, or provide protection for specific devices.

[0004] If the current method of target gas encapsulation is still used, the welding methods are all high-temperature welding. On the one hand, the special gas is easily decomposed at high temperatures, and on the other hand, metal outgassing at high temperatures affects the purity of the special gas. In addition, the above-mentioned equipment generally has a relatively large cavity, requiring the introduction of a large amount of special gas, resulting in waste. Therefore, the existing encapsulation method not only causes gas waste, but also affects the encapsulation quality, component reliability, and long-term stability. Summary of the Invention

[0005] In view of the above problems, the purpose of this application is to provide a packaging structure and packaging method that, through a high vacuum environment and precise gas release control, ensures the purity of the target gas and the stability of the components during the packaging process, avoids the influence of impurity gases, welding exhaust gases and overheating, thereby improving the packaging quality, component reliability and long-term stability.

[0006] In a first aspect, embodiments of this application provide a packaging structure, which includes: a gas storage, a component to be packaged, and a packaging unit; the gas storage and the component to be packaged are disposed in a packaging cavity formed by the packaging unit; the gas storage is configured to store a target gas and is connected to the gas storage and the packaging cavity in a preset state.

[0007] In the above implementation process, the packaging structure provided in this application embodiment includes a gas storage, a component to be packaged, and a packaging unit. The packaging unit encapsulates the component to be packaged and the gas storage within a packaging cavity. Under a preset state, the gas in the gas storage can be released into the packaging cavity. Therefore, the packaging structure provided in this application embodiment greatly avoids gas waste. By pre-setting the target gas, the target gas is released and fills the packaging cavity under a preset state, avoiding the influence of impurity gases, welding fumes, and overheating, thus improving packaging quality and reliability.

[0008] Optionally, in this embodiment, the gas storage includes a low-temperature solder and a first through-hole; the preset state includes a state in which the low-temperature solder is melted; the low-temperature solder seals the first through-hole of the gas storage and is configured to seal the target gas within the gas storage when it is not melted, and to connect the gas storage and the encapsulation cavity when the low-temperature solder melts.

[0009] In the above implementation process, the packaging structure provided in this application embodiment seals the target gas while the low-temperature solder is still undone during the packaging process, ensuring that it does not leak. When the low-temperature solder melts, the first through-hole connects the stored gas to the packaging cavity, allowing the target gas to be released into the packaging cavity. Because the low-temperature solder has a low melting point, it can effectively avoid the influence of high temperature on other components (e.g., heating causes component displacement), and the target gas will not decompose at high temperature. In addition, the amount of solder is extremely small, avoiding the introduction of too much impurity gas, ensuring the purity of the gas and the stability of the components.

[0010] Optionally, in this embodiment of the application, the packaging unit includes a metal frame, a metal cover plate, and a first substrate having a first receiving groove and a second receiving groove; the first substrate and the metal cover plate are respectively welded to both sides of the metal frame; the first receiving groove is configured to contain stored gas, and the second receiving groove is configured to contain the component to be packaged.

[0011] In the above implementation process, the first substrate and metal cover plate of the packaging structure provided in this application embodiment are fixed to both sides of the metal frame by welding. The first receiving groove is used to accommodate the stored gas, and the second receiving groove is used to accommodate the component to be packaged. Using high-temperature co-fired ceramic (HTCC) or low-temperature co-fired ceramic (LTCC) as the substrate material ensures the high hermeticity and strength of the packaging structure, while also supporting the arrangement and lead-out of internal circuitry, thereby ensuring the reliability and stability of the packaging structure. This packaging structure, through reasonable space allocation and high hermeticity design, improves the safe packaging of the stored gas and the protection of the component, optimizing the packaging effect.

[0012] Optionally, in this embodiment of the application, the packaging structure further includes a heating element; the heating element is disposed near the first receiving groove and configured to transfer heat to the stored gas in its heating state.

[0013] In the above implementation process, the packaging structure provided in this application embodiment includes a heating element, which is disposed near the first receiving groove and transfers heat to the stored gas through heating. The heating element can be a heating circuit or a heating ceramic, and different heating elements have different placement methods. Since the stored gas uses a material with high thermal conductivity and the stored gas is close to the heating element, local rapid heating can be achieved, thereby effectively releasing the gas. This avoids the overheating problem caused by overall heating, prevents overheating of other components in the packaging structure and component displacement caused by solder remelting, and ensures the stability and reliability of the packaging structure.

[0014] Optionally, in this embodiment, the first substrate includes a step, the component to be packaged includes a waveguide cavity with a second through hole, the packaging unit includes a second substrate with a chip receiving hole, the step is arranged parallel to the length or width direction of the second receiving groove, the dimension of the step in the height direction of the second receiving groove is greater than the dimension of the component to be packaged in the height direction, the step is configured to support the second substrate, the chip receiving hole is configured to accommodate a spectral chip, and the second substrate is configured to be electrically connected to the first substrate.

[0015] In the above implementation process, the packaging structure provided by the embodiments of this application can be used to seal waveguide cavities and related spectral chips. The gas storage is set in the first receiving groove. When the low-temperature solder melts, the solder will flow onto the side wall of the gas storage after melting. After cooling, it will remain directly on the gas storage. Even if it flows into the groove along the gas storage, it will not flow into the second receiving groove and will not affect the packaging structure, thus providing a reliable packaging solution for the packaging of waveguide cavities.

[0016] Optionally, in an embodiment of this application, the metal cover includes a solder joint; the solder joint is configured to solder a third through hole connecting the encapsulation cavity to the outside.

[0017] In the above implementation process, the packaging structure provided in this application embodiment can extract the gas inside the packaging structure under high vacuum conditions through the third through-hole, and then seal the small hole. Finally, the preset target gas is released through local heating. This effectively ensures that the packaging structure is sealed under high vacuum conditions, avoids the residue of impurity gases inside the cavity, and improves the packaging quality and long-term stability of the components.

[0018] Secondly, embodiments of this application provide a packaging method, which includes: placing the component to be packaged and a gas storage gas in a packaging cavity formed by a packaging unit; wherein the gas storage gas stores a target gas; controlling the packaging cavity to be a vacuum environment; and destroying the shell of the gas storage gas by external stimulation; wherein the gas storage gas after the shell is destroyed is connected to the packaging cavity.

[0019] In the above implementation process, the packaging method provided in this application embodiment ensures the purity of the target gas and the stability of the components during the packaging process through a high vacuum environment and precise gas release control, avoiding the influence of impurity gases, welding exhaust gases and overheating, thereby improving the packaging quality, component reliability and long-term stability.

[0020] Optionally, in this embodiment of the application, the gas storage includes a gas storage copper pipe; the gas storage copper pipe is obtained by: providing a first through hole in the body of the copper pipe having a first end and a second end connected to the outside, and sealing the first through hole with low-temperature solder; cold welding the first end of the copper pipe; after evacuating the copper pipe from the second end, filling it with the target gas from the second end; and cold welding the second end of the copper pipe.

[0021] In the above implementation process, in this embodiment, low-temperature solder is used to seal the through-hole of the copper tube, and cold welding technology is used to seal both ends of the copper tube. This simplifies the process flow, avoids the complexity of high-temperature welding, reduces equipment requirements, and improves manufacturing efficiency. Furthermore, the copper tube can also be plated for different solders and welding sealing conditions. In addition, copper tubes and low-temperature solders have good material compatibility. The high strength and airtightness of the copper tube ensure the long-term stable storage of the target gas, while the low-temperature solder effectively avoids thermal damage to the packaged components, ensuring operational flexibility and precise control. Moreover, this method has strong scalability, is suitable for large-scale production, and can improve production consistency through automated equipment. In summary, using a gas-storing copper tube to package the target gas not only improves the stability and reliability of the packaging but also significantly simplifies the manufacturing process, reduces costs, and enhances the feasibility of large-scale production.

[0022] Optionally, in this embodiment of the application, the packaging unit includes a metal frame, a metal cover plate, and a first substrate having a first receiving groove and a second receiving groove; placing the component to be packaged and the gas storage in the packaging cavity formed by the packaging unit includes: welding the first substrate to a first side of the metal frame; fixing the gas storage in the first receiving groove and fixing the component to be packaged in the second receiving groove; welding the metal cover plate to a second side of the metal frame.

[0023] In the aforementioned implementation process, this application achieves cryogenic gas encapsulation by pre-encapsulating a special gas within a storage gas, and then releasing the gas through localized heating of the storage gas, thereby achieving cryogenic encapsulation of the overall structure. This method first seals the target gas within the storage gas before performing welding and vacuum treatment of the structure and components, effectively preventing the gas purity from being affected by impurities or welding exhaust gases. Simultaneously, the method of locally heating the storage gas to release it avoids heat diffusion affecting other electronic components, ensuring the efficiency and stability of the encapsulation process.

[0024] Optionally, in an embodiment of this application, the packaging unit includes a heating element; the heating element is disposed near the first receiving groove; the shell of the gas storage is destroyed by external stimulation, including: controlling the heating element to emit heat; wherein the heat emitted by the heating element is transferred to the gas storage via the first substrate and is used to destroy the shell of the gas storage.

[0025] In the above implementation process, this application achieves the technical effect of precisely controlling the release of the target gas by setting a heating element in the packaging unit. After packaging, heat is transferred to the stored gas through the heating element (such as a heating circuit or heating ceramic), melting the low-temperature solder that seals the first through-hole, breaking the shell of the stored gas, connecting the stored gas with the packaging cavity, and allowing the target gas to be released. The heat generated by the heating element is transferred to the stored gas through the first substrate, which has the characteristics of precise controllability, while avoiding the influence of overall heating on other components, ensuring the reliability of the packaging process and the purity of the target gas. This not only improves the efficiency and safety of gas release, but also enhances the stability and practicality of the overall packaging structure.

[0026] Thirdly, embodiments of this application provide an electronic device, which includes a memory and a processor. The memory stores program instructions, and when the processor reads and runs the program instructions, it executes the steps in any of the above-described encapsulation methods.

[0027] Fourthly, embodiments of this application also provide a computer-readable storage medium storing computer program instructions, which, when read and executed by a processor, perform the steps in any of the above-described encapsulation methods.

[0028] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a first schematic diagram of the packaging structure provided in an embodiment of this application;

[0031] Figure 2 Example diagram of gas storage provided for embodiments of this application;

[0032] Figure 3This is a second schematic diagram of the packaging structure provided in the embodiments of this application;

[0033] Figure 4 A third schematic diagram of the packaging structure provided in the embodiments of this application;

[0034] Figure 5 This is a fourth schematic diagram of the packaging structure provided in the embodiments of this application;

[0035] Figure 6 This is a fifth schematic diagram of the packaging structure provided in the embodiments of this application;

[0036] Figure 7 A first flowchart of the encapsulation method provided in an embodiment of this application;

[0037] Figure 8 A flowchart for gas storage preparation provided in the embodiments of this application;

[0038] Figure 9 A second flowchart of the encapsulation method provided in the embodiments of this application;

[0039] Figure 10 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0040] Reference numerals: Packaging structure - 1000; Gas storage - 100; Low-temperature solder - 110; Component to be packaged - 200; Waveguide cavity - 210; Second through-hole - 220; Spectrometer chip - 230; Packaging unit - 300; Metal frame - 310; Metal cover plate - 320; First receiving groove - 331; Second receiving groove - 332; Solder joint - 333; First substrate - 330; Step - 334; Second substrate - 340; Chip receiving hole - 341; Electronic device - 400; Processor - 401; Memory - 402. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0043] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0044] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0045] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0046] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0047] Currently, conventional semiconductor packaging structures typically maintain an internal pressure of approximately one atmosphere to ensure there is no significant pressure difference between the inside and outside of the package cavity. However, with the increasing demands from industries such as aerospace, deep-sea exploration, and oil exploration, the requirements for controlling the internal pressure of the packaging structure are becoming increasingly stringent, especially the need for low vacuum pressure. This makes it difficult for traditional parallel sealing and laser welding equipment to meet this emerging demand, rendering them unable to effectively perform low-pressure sealing.

[0048] Furthermore, most current semiconductor packages utilize an inert gas atmosphere, such as nitrogen, to prevent oxidation or corrosion of components and soldered areas. However, with increasing demands from fields like measurement and control technology and sensors, package structures may require the encapsulation of certain specialized gases. These gases are typically used for reference, measurement, or to provide protection for specific components. These specialized gases are often costly and readily react with moisture or other substances in the air, or decompose easily at high temperatures, potentially posing hazards to equipment and operators. Therefore, these specialized gases are unsuitable for large-scale introduction into equipment cavities and are not appropriate for packaging in such an environment.

[0049] During their research, the inventors discovered that even though these special gases are not harmful to the equipment itself, they are still unsuitable for overall encapsulation within the equipment cavity. This is because using high-temperature metal melting methods such as lasers or electron beams for encapsulation inevitably leads to the decomposition of the special gases. Furthermore, it generates a significant amount of welding waste gas, which in turn affects the purity of the special gases. Even using parallel sealing methods, the high local temperatures make it impossible to effectively avoid these problems.

[0050] If low-temperature solder is used for overall encapsulation, although the temperature is lower, a larger amount of solder is still required. Furthermore, the temperature of the entire encapsulation structure will reach or exceed the melting temperature of the solder, placing higher temperature resistance requirements on all components and their soldering materials. At the same time, low-temperature solder has lower welding strength, and the large-scale use of solder generates corresponding waste gases, which will also affect the purity of special gases and make it difficult to meet high airtightness requirements.

[0051] Based on this, the present application provides a packaging structure and packaging method that can package special gases without consuming a large amount of gas and without decomposing the gas, and can package the gas together with the components without the entire packaging structure reaching the melting temperature of the low-temperature solder, thereby ensuring packaging quality, component reliability and long-term stability.

[0052] Please refer to Figure 1 , Figure 1 This is a first schematic diagram of the packaging structure provided in the embodiments of this application; the embodiments of this application provide a packaging structure 1000, which includes a gas storage 100, a component to be packaged 200, and a packaging unit 300.

[0053] The gas storage 100 and the component to be packaged 200 are disposed in the packaging cavity formed by the packaging unit 300.

[0054] The gas storage 100 is configured to store the target gas and is connected to the encapsulation cavity in a preset state.

[0055] The gas storage 100 provided in this application embodiment is used to encapsulate a target gas for release when needed. In this application embodiment, the gas storage 100 may be a gas container made of metallic or composite materials, possessing sealing properties and high pressure resistance. Suitable for encapsulation needs of different scales, the internal pressure of the gas storage 100 can be adjusted according to the gas content therein.

[0056] The target gas refers to a special gas stored and released into the packaging cavity during the packaging process. It may be used for reference, measurement, or protection of specific devices. In the embodiments of this application, the target gas may be an inert gas (such as nitrogen or argon) or other special gases (such as hydrogen or fluorinated gases), selected based on the requirements of the packaged element and the application scenario. In the above implementation process, under a preset state, the gas storage 100 is connected to the packaging cavity, and the target gas is released from the gas storage 100 into the packaging cavity, making the entire packaging cavity surrounded by the target gas atmosphere. The preset state may be that the gas storage 100 reaches a certain physical state, such as a preset temperature or a preset pressure difference between the inside and outside of the gas storage 100; or, the gas storage 100 receives a specific external induction, causing the target gas inside the gas storage 100 to be released into the packaging cavity, for example, optical damage to the gas storage 100 shell or mechanical damage to the gas storage 100.

[0057] pass Figure 1 As can be seen, the packaging structure 1000 provided in this application embodiment includes a gas storage 100, a component to be packaged 200, and a packaging unit 300. The packaging unit 300 packages the component to be packaged 200 and the gas storage 100 within a packaging cavity. Under a preset state, the gas in the gas storage 100 can be released into the packaging cavity. Therefore, the packaging structure 1000 provided in this application embodiment greatly avoids gas waste. By pre-setting the target gas, the target gas is released in a preset state, filling the packaging cavity with its purity, thus avoiding the influence of impurity gases, welding fumes, and overheating, thereby improving packaging quality and reliability.

[0058] Please refer to Figure 2 , Figure 2 This is an example diagram of gas storage provided in an embodiment of this application; in this embodiment of the application, the gas storage 100 includes a low-temperature solder 110 and a first through hole, and the preset state includes the state in which the low-temperature solder 110 is melted.

[0059] The low-temperature solder 110 is configured to seal the target gas within the gas storage 100 when it is not melted. The first through-hole is configured to connect the gas storage 100 and the encapsulation cavity when the low-temperature solder 110 is melted.

[0060] During the encapsulation process, the role of the low-temperature solder 110 is to seal the target gas within the gas storage 100, maintaining the airtightness of the target gas while the low-temperature solder 110 is not melted. When the low-temperature solder 110 is melted, the pressure difference between the inside and outside of the gas storage accelerates the solder flow, clears the small holes, and the first through hole connects the gas storage 100 and the encapsulation cavity, allowing the target gas to be released into the encapsulation cavity.

[0061] It should be noted that the low-temperature solder 110 in this application embodiment refers to a solder with a low melting point and good welding performance, such as tin-based alloys, bismuth-based alloys, etc. The reason for choosing low-temperature solder 110 to block the first through hole in this application embodiment is that the package structure 1000 contains other components that need to be packaged. If the target gas in the gas storage 100 is induced to be released from the gas storage 100 in a certain way after the packaging is completed, then this induction method must not introduce too much impurity gas or affect the stability of other components.

[0062] In other words, in this embodiment, a low-temperature solder 110 is used to seal the first through-hole. Firstly, the first through-hole is a small hole, requiring very little solder, and a low vapor pressure solder can be selected. Even if impurity gases are released during the solder melting process, the amount is extremely small. Secondly, the low-temperature solder 110 has a low melting point, preventing temperature increases in other components during its melting process. Therefore, the stability and reliability of the packaging structure 1000 provided in this embodiment are significantly improved.

[0063] In another embodiment, the cryogenic solder 110 sealing the first through-hole on the gas storage 100 housing can be melted or destroyed by continuous laser irradiation, thereby allowing the gas storage 100 to communicate with the encapsulation cavity through the first through-hole. In this embodiment, the housing of the encapsulation structure 1000 is optically transparent or partially transparent. Multiple energy-carrying laser beams can irradiate the cryogenic solder 110 on the gas storage 100 housing from different angles. During irradiation, the multiple energy-carrying laser beams pass through the optically transparent or partially transparent housing of the encapsulation structure 1000 and converge at the cryogenic solder 110. The energy carried by the multiple laser beams converges at the cryogenic solder 110 to melt the cryogenic solder 110, thereby allowing the gas storage 100 to communicate with the encapsulation cavity through the first through-hole to release the target gas in the gas storage 100. Furthermore, since the energy carried by each laser beam is relatively low, the housing of the encapsulation structure 1000 will not be burned or damaged during the melting of the cryogenic solder 110.

[0064] In another embodiment, an optical convex lens can be provided on the metal cover plate 320, and the distance between the first through hole and the optical convex lens can be controlled. The lens can be used to focus light on the low-temperature solder 110 to achieve local heating and melting of the low-temperature solder 110 at the small hole.

[0065] In another embodiment, the low-temperature solder 110 of the first through hole on the gas storage 100 housing may be mechanically destroyed, for example, by mechanical vibration of a specific frequency, or by receiving a sound / ultrasonic signal of a specific frequency, thereby allowing the gas storage 100 to communicate with the encapsulation cavity through the first through hole to release the target gas in the gas storage 100.

[0066] pass Figure 2 As can be seen, in the packaging structure 1000 provided in this application embodiment, during the packaging process, the low-temperature solder 110 seals the target gas while it is not melted, ensuring that it will not leak; when the low-temperature solder 110 melts, the first through hole connects the gas storage 100 to the packaging cavity, allowing the target gas to be released into the packaging cavity. Because the low-temperature solder 110 has a low melting point, it can effectively avoid the influence of high temperature on other components (e.g., heating causes component displacement), and the target gas will not decompose at high temperature; moreover, the amount of solder is extremely small, avoiding the introduction of too much impurity gas, ensuring the purity of the gas and the stability of the components.

[0067] Please refer to Figure 3 , Figure 3 This is a second schematic diagram of the packaging structure 1000 provided in the embodiments of this application; the packaging unit 300 provided in the embodiments of this application includes a metal frame 310, a metal cover plate 320 and a first substrate 330 having a first receiving groove 331 and a second receiving groove 332.

[0068] like Figure 3 As shown, the first substrate 330 and the metal cover plate 320 are respectively welded to both sides of the metal frame 310.

[0069] The first receiving tank 331 is configured to receive the gas 100, and the second receiving tank 332 is configured to receive the component to be packaged 200.

[0070] The materials of the first substrate 330 and the second substrate 340 include high-temperature co-fired ceramics or low-temperature co-fired ceramics. In the embodiments of this application, the first substrate 330 and the second substrate 340 are multilayer high-temperature co-fired ceramics (HTCC) or low-temperature co-fired ceramics (LTCC). In some embodiments, circuits can be arranged on the surface or inside of the ceramic substrate, and the circuits inside the packaging structure 1000 can be led out to the outside through the ceramic substrate, which can ensure the high hermeticity of the packaging structure 1000.

[0071] like Figure 3 As shown, in this embodiment of the application, the gas storage 100 and other components to be packaged 200 are reasonably partitioned inside the packaging cavity, and the gas storage 100 and other components to be packaged are respectively placed in the first receiving groove 331 and the second receiving groove 332.

[0072] pass Figure 3As can be seen, the first substrate 330 and the metal cover plate 320 of the packaging structure 1000 provided in this application embodiment are fixed to both sides of the metal frame 310 by welding. The first receiving groove 331 is used to receive the gas storage 100, and the second receiving groove 332 is used to receive the component 200 to be packaged. Using high-temperature co-fired ceramic (HTCC) or low-temperature co-fired ceramic (LTCC) as the substrate material ensures the high hermeticity of the packaging structure 1000, while also supporting the arrangement and lead-out of internal circuits, thereby ensuring the reliability and stability of the packaging structure 1000. Through reasonable space allocation and high hermeticity design, the packaging structure 1000 improves the safe packaging of the gas storage 100 and the protection of the component, and optimizes the packaging effect.

[0073] In an optional embodiment, the encapsulation structure 1000 further includes a heating element. The heating element is disposed near the first receiving groove 331 and configured to transfer heat to the gas storage 100 when it is in a heated state.

[0074] For example, the heating element can be a heating circuit or a heating ceramic; in this embodiment, the heating element can be disposed inside the first substrate 330, or disposed on the lower surface of the first substrate 330 away from the gas storage 100, near the upper surface of the gas storage 100, on the inner side along the height direction of the first receiving groove 331, or on the outer side along the height direction of the first receiving groove 331.

[0075] Specifically, when the heating element is a heating circuit, the heating circuit can be located in the first substrate (excluding the inner surface, as short circuits will occur when the circuit comes into contact with the metal shell storing the gas), or outside the first substrate (but appropriate circuit protection measures need to be provided).

[0076] When the heating element is a heating ceramic, the heating ceramic can be disposed in the first substrate, the inner side of the first substrate in contact with the gas storage, and the outer surface of the first substrate (including the outer side and the outer bottom surface).

[0077] Since the gas storage 100 in this embodiment is made of a material with high thermal conductivity, and the gas storage 100 is located close to the heating circuit, it can achieve local rapid heating and gas release, avoiding overheating of all components inside the package structure 1000 due to overall heating and component position shift caused by solder remelting.

[0078] Therefore, the packaging structure 1000 provided in this application embodiment includes a heating element, which is disposed near the first receiving groove 331 and transfers heat to the gas storage 100 through heating. The heating element can be a heating circuit or a heating ceramic, and different arrangements are made for different heating elements. Since the gas storage 100 uses a material with high thermal conductivity and the gas storage 100 is close to the heating element, local rapid heating can be achieved, thereby effectively releasing the gas. This avoids the overheating problem caused by overall heating, prevents overheating of other components within the packaging structure 1000 and component displacement caused by solder remelting, and ensures the stability and reliability of the packaging structure 1000.

[0079] Please refer to Figure 4 and Figure 5 , Figure 4 A third schematic diagram of the packaging structure 1000 provided in an embodiment of this application; Figure 5 This is a fourth schematic diagram of the packaging structure 1000 provided in an embodiment of this application; in an optional embodiment, the first substrate 330 includes a step 334, the component to be packaged 200 includes a waveguide cavity 210 having a second through hole 220; the packaging unit 300 includes a second substrate 340 having a chip receiving hole 341; the step 334 is arranged parallel to the length direction or width direction of the second receiving groove 332, the dimension of the step 334 in the height direction of the second receiving groove 332 is larger than the dimension of the component to be packaged 200 in the height direction, and the step 334 is configured to support the second substrate 340; the chip receiving hole 341 is configured to receive a spectral chip 230, and the second substrate 340 is configured to be electrically connected to the first substrate.

[0080] Please refer to the following: Figure 4 The component 200 to be packaged in the packaging structure 1000 provided in this application embodiment may include a waveguide cavity 210 and a spectral chip 230; such as Figure 4 As shown, the waveguide cavity 210 and the waveguide chip 230 are disposed in the second receiving groove 332. The waveguide cavity 210 is provided with a second through hole 220. When the low-temperature solder 110 blocking the first through hole melts, the target gas in the gas storage 100 is released into the packaging cavity, and then released into the waveguide channel through the second small hole, serving as a transmission medium for microwave signals. At the resonant frequency, the gas absorbs microwave energy, causing the signal received at the receiving chip to have an intensity difference compared to the non-resonant frequency. Since the resonant frequency of the specific gas is constant, through feedback control, the microwave signal at the resonant frequency can be used as a metronome to generate time pulses, thus serving as a time reference.

[0081] Please refer to the following: Figure 5 The packaging structure 1000 provided in this application embodiment also includes a second substrate 340, such as... Figure 5As shown, the second substrate 340 is mounted on the step 334, thereby being positioned above the waveguide cavity 210. Similarly, the second substrate 340 can also be an HTCC or LTCC board, and a certain gap exists between the second substrate 340 and the waveguide cavity 210. The spectrometer chip 230 is housed in the second substrate 340 through a chip receiving hole 341. It should be noted that the size of the chip receiving hole 341 is slightly larger than the size of the spectrometer chip 230, allowing gas to pass through the second substrate into the gap between the second substrate 340 and the waveguide cavity 210, and then into the waveguide cavity 210.

[0082] Combination Figure 4 and Figure 5 As can be seen, in this embodiment of the application, there are two spectral chips 230 adapted to the waveguide cavity 210, which are used for receiving signals and transmitting signals respectively; therefore, two chip receiving holes 341 are adapted to the two spectral chips 230.

[0083] pass Figure 4 and Figure 5 As can be seen, the packaging structure 1000 provided in this application embodiment can be used to encapsulate the waveguide cavity 210 and the related spectrum chip 230. The gas storage 100 is disposed in the first receiving groove 331. When the low-temperature solder 110 melts, the solder will flow onto the side wall of the gas storage 100 after melting. After cooling, it will remain directly on the gas storage 100. Even if it flows into the groove along the gas storage 100, it will not flow into the second receiving groove 332 and will not affect the packaging structure 1000, thus providing a reliable packaging solution for the packaging of the waveguide cavity 210.

[0084] Please refer to Figure 6 , Figure 6 This is a fifth schematic diagram of the packaging structure 1000 provided in the embodiments of this application; the metal cover plate 320 of the packaging structure 1000 in the embodiments of this application includes a solder joint 333, which is configured to seal and connect the packaging cavity to the outside through a third through hole.

[0085] In this embodiment, the metal frame 310 is first welded to the first HTCC substrate 330, then the internal devices and the gas storage 100 containing the target gas are placed into the first receiving groove 331 and the second receiving groove 332, then the metal cover plate 320 is welded to the frame, and finally the gas inside the packaging structure 1000 is extracted through the third through hole on the metal cover plate 320, and the small hole is sealed in a high vacuum environment. Finally, the preset target gas is released by local heating.

[0086] In some embodiments, the metal cover plate 320 may not have a third through hole. During the encapsulation process, a high vacuum is drawn using the assembly gap between the metal cover plate 320 and the metal frame 310, and then the seal is welded.

[0087] pass Figure 6As can be seen, the packaging structure 1000 provided in this application embodiment can extract the gas inside the packaging structure 1000 under high vacuum environment through the third through hole, and seal the hole. Finally, the preset target gas is released by local heating. This effectively ensures that the packaging structure 1000 is sealed under high vacuum environment, avoids the residue of impurity gas inside the cavity, and improves the packaging quality and long-term stability of the component.

[0088] Please refer to Figure 7 , Figure 7 This is a first flowchart of a packaging method provided in an embodiment of this application; this application provides a packaging method that can be packaged through... Figure 10 The packaging method is performed on an electronic device. The packaging method includes the following steps:

[0089] Step S100: The component to be packaged and the gas storage are placed in the packaging cavity formed by the packaging unit; wherein the gas storage contains the target gas.

[0090] In step S100 above, the component to be packaged (such as a semiconductor device, sensor, circuit board, etc.) and the storage gas are placed in a packaging cavity composed of packaging units (such as a metal frame, substrate, cover plate, etc.). The storage gas stores a specific target gas (such as nitrogen, helium, hydrogen, etc.), which usually has a specific function, such as providing atmosphere protection, reference gas, or for other specific purposes (such as temperature or pressure sensing).

[0091] Step S200: Control the encapsulation cavity to be a vacuum environment.

[0092] In step S200 above, the air inside the packaging cavity is removed by using a vacuum laser welding device or a vacuum electron beam welding device, so that the packaging cavity becomes a vacuum environment.

[0093] It should be noted that the vacuum in this embodiment refers to a certain degree of low pressure, such as 10. -4 pa, rather than an absolute vacuum.

[0094] Step S300: The gas storage casing is destroyed by an external stimulus. The gas stored in the casing after destruction is connected to the encapsulation cavity.

[0095] In step S300 above, the gas storage shell is damaged by some external stimulus (such as temperature, pressure, laser or other heat source, or even mechanical damage), causing the seal of the shell to break (for example, the low-temperature solder sealing the first through hole in the packaging structure melts), thereby releasing the target gas in the gas storage.

[0096] pass Figure 7As can be seen, the packaging method provided in this application ensures the purity of the target gas and the stability of the components during the packaging process through a high vacuum environment and precise gas release control, avoiding the influence of impurity gases, welding exhaust gases and overheating, thereby improving the packaging quality, component reliability and long-term stability.

[0097] Please refer to Figure 8 , Figure 8 A flowchart for gas storage preparation provided in this application embodiment; the gas storage in this application embodiment includes a gas storage copper pipe, which can be obtained in the following ways:

[0098] Step S1: Set a first through hole in the copper tube body with a first end and a second end that are connected to the outside, and seal the first through hole with low-temperature solder.

[0099] Step S2: Cold weld the first end of the copper pipe.

[0100] Step S3: After evacuating the copper tube from the second end, fill it with the target gas from the second end.

[0101] Step S4: Cold weld the second end of the copper pipe.

[0102] For example, a square copper tube with a wall thickness of less than 0.5 mm is used, and a small through hole, i.e., the first through hole, is made in the copper tube. First, one end is clamped off and cold-welded, and then the small through hole is sealed by welding with solder. Subsequently, an air-filling device is used to flare, evacuate, and fill the other end of the copper tube with a special gas. After the air-filling is completed, the air-filled end is clamped off and cold-welded again using cold-welding pliers. By controlling the volume of the copper tube, the process parameters of the clamping and cold-welding, and the air pressure, the air volume can be controlled more precisely, which can greatly avoid problems such as gas waste and gas decomposition.

[0103] pass Figure 8 As can be seen, in this embodiment, low-temperature solder is used to seal the through-hole of the copper tube, and cold welding technology is used to seal both ends of the copper tube. This simplifies the process, avoids the complexity of high-temperature welding, reduces equipment requirements, and improves manufacturing efficiency. Furthermore, copper tubes and low-temperature solders have good material compatibility. The high strength and airtightness of the copper tube ensure long-term stable storage of the target gas, while the low-temperature solder effectively avoids thermal damage to the packaged components, ensuring operational flexibility and precise control. In addition, this method has strong scalability, is suitable for large-scale production, and can improve production consistency through automated equipment. In summary, using a gas-storing copper tube to package the target gas not only improves the stability and reliability of the packaging but also significantly simplifies the manufacturing process, reduces costs, and enhances the feasibility of large-scale production.

[0104] Please refer to the following: Figure 9 , Figure 9A second flowchart of the packaging method provided in this application embodiment; in an optional embodiment, the packaging unit includes a metal frame, a metal cover plate, and a first substrate having a first receiving groove and a second receiving groove. Step S100 above, which involves placing the component to be packaged and the gas storage within the packaging cavity formed by the packaging unit, includes:

[0105] Step S110: Weld the first substrate to the first side of the metal frame.

[0106] Step S120: Fix the gas storage tank in the first receiving tank and fix the component to be packaged in the second receiving tank.

[0107] Step S130: Weld the metal cover plate to the second side of the metal frame.

[0108] A third through-hole is provided on the metal cover plate. After the encapsulation cavity is evacuated through the third through-hole, the third through-hole is sealed by welding. It should be noted that in the embodiments of this application, the frame and the metal cover plate can be laser welded, and then the third through-hole can be welded by vacuum electron beam. The area below the third through-hole needs to be shielded to prevent the electron beam from hitting the device. However, it is also possible to consider customizing a laser welding equipment with vacuum. Since the laser is a high-temperature focused laser, the device below will not be welded when the third through-hole is laser welded.

[0109] pass Figure 9 As can be seen, this application achieves cryogenic encapsulation of the gas by pre-encapsulating a special gas within a storage gas, and then releasing the gas by locally heating the storage gas, thereby achieving cryogenic encapsulation of the overall structure. This method first seals the target gas within the storage gas before welding the structure and components and performing vacuum treatment, effectively preventing the gas purity from being affected by impurities or welding exhaust gases. Simultaneously, the method of locally heating the storage gas to release it avoids heat diffusion affecting other electronic components, ensuring the efficiency and stability of the encapsulation process.

[0110] In an alternative embodiment, the packaging unit includes a heating element disposed near the first receiving groove.

[0111] The method of destroying the gas storage casing through external stimulation includes controlling a heating element to emit heat. The heat emitted by the heating element is transferred to the gas storage via a first substrate and used to destroy the gas storage casing.

[0112] The heating element in the above process can be a heating circuit or a heating ceramic. After encapsulation, heat is transferred to the gas storage chamber through the heating element. For example, the gas storage chamber mentioned above is provided with a first through hole blocked by low-temperature solder. When the gas storage chamber is heated by the heating element, the low-temperature solder melts, the first through hole connects the gas storage chamber and the encapsulation, and the target gas is released from the gas storage chamber.

[0113] Therefore, this application achieves the technical effect of precisely controlling the release of the target gas by incorporating a heating element within the packaging unit. After packaging, heat is transferred to the stored gas through the heating element (such as a heating circuit or heating ceramic), melting the first through-hole sealed by its low-temperature solder. This breaks down the gas storage shell, connecting the stored gas to the packaging cavity, allowing the target gas to be released. The heat generated by the heating element is transferred to the stored gas through the first substrate, exhibiting precise and controllable characteristics while avoiding the impact of overall heating on other components, ensuring the reliability of the packaging process and the purity of the target gas. This not only improves the efficiency and safety of gas release but also enhances the stability and practicality of the overall packaging structure.

[0114] Please see Figure 10 , Figure 10 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. An electronic device 400 provided in this application includes: a processor 401 and a memory 402. The memory 402 stores machine-readable instructions executable by the processor 401. When the machine-readable instructions are executed by the processor 401, the method described above is performed.

[0115] Based on the same inventive concept, embodiments of this application also provide a computer-readable storage medium storing computer program instructions, which, when read and executed by a processor, perform steps in any implementation of the above-described encapsulation method.

[0116] The computer-readable storage medium can be any medium capable of storing program code, such as Random Access Memory (RAM), Read Only Memory (ROM), Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM).

[0117] In this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, without necessarily requiring or implying any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0118] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A packaging structure, characterized in that, The packaging structure includes: a gas storage element, a component to be packaged, and a packaging unit; The gas storage and the component to be packaged are disposed within a packaging cavity formed by the packaging unit; The gas storage is configured to store the target gas and is connected to the packaging cavity in a preset state.

2. The packaging structure according to claim 1, characterized in that, The gas storage includes a low-temperature solder and a first through-hole; the preset state includes the state in which the low-temperature solder is melted; The low-temperature solder is used to seal the first through hole of the gas storage chamber and is configured to seal the target gas within the gas storage chamber when it has not melted, and to connect the gas storage chamber and the encapsulation cavity when the low-temperature solder melts.

3. The packaging structure according to claim 1, characterized in that, The packaging unit includes a metal frame, a metal cover plate, and a first substrate having a first receiving groove and a second receiving groove. The first substrate and the metal cover plate are respectively welded to both sides of the metal frame; The first receiving tank is configured to receive the gas, and the second receiving tank is configured to receive the component to be packaged.

4. The packaging structure according to claim 3, characterized in that, The packaging structure also includes a heat-generating element; The heating element is located near the first receiving tank and is configured to transfer heat to the stored gas when it is in a heating state.

5. The packaging structure according to claim 3, characterized in that, The first substrate includes a step, and the component to be packaged includes a waveguide cavity with a second through-hole; the packaging unit includes a second substrate with a chip receiving hole. The step is arranged parallel to the length or width of the second receiving groove. The dimension of the step in the height direction of the second receiving groove is larger than the dimension of the component to be packaged in the height direction. The step is configured to support the second substrate. The chip receiving hole is configured to receive the spectral chip, and the second substrate is configured to be electrically connected to the first substrate.

6. The packaging structure according to claim 3, characterized in that, The metal cover plate includes weld points; The solder joint is configured to seal a third through hole connecting the encapsulation cavity to the outside.

7. A packaging method, characterized in that, The encapsulation method includes: The component to be packaged and the gas storage are placed in the packaging cavity formed by the packaging unit; wherein the gas storage contains the target gas. The encapsulation cavity is kept in a vacuum environment; The gas storage casing is destroyed by an external stimulus; wherein the gas stored after the casing is destroyed is in communication with the encapsulation cavity.

8. The packaging method according to claim 7, characterized in that, in, The gas storage includes a gas storage copper pipe; the gas storage copper pipe is obtained in the following ways: A first through hole is provided in the copper tube body with a first end and a second end that communicate with the outside world, and the first through hole is sealed with low-temperature solder. The first end of the copper tube was cold-welded; After evacuating the copper tube from its second end, the target gas is then introduced into the second end. The second end of the copper tube is cold-welded.

9. The packaging method according to claim 8, characterized in that, in, The packaging unit includes a metal frame, a metal cover plate, and a first substrate having a first receiving groove and a second receiving groove. The step of placing the component to be packaged and the gas storage inside the packaging cavity formed by the packaging unit includes: The first substrate is welded to the first side of the metal frame; The gas storage is fixed in the first receiving groove, and the component to be packaged is fixed in the second receiving groove; The metal cover plate is welded to the second side of the metal frame.

10. The packaging method according to claim 9, characterized in that, in, The packaging unit includes a heating element; the heating element is disposed near the first receiving groove; The method of destroying the gas storage shell through external stimulation includes: Control the heat emitted by the heating element; The heat emitted by the heating element is transferred to the gas storage via the first substrate and is used to break the casing of the gas storage.

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