Bonding interface defect elimination module, method, and semiconductor device processing apparatus

Abstract

This invention provides a method for eliminating bonding interface defects, a module for eliminating bonding interface defects, a semiconductor device processing apparatus, and a computer-readable storage medium. The method for eliminating bonding interface defects includes the following steps: locating at least one bubble defect on the bonding interface of a grain-wafer bond; and applying a pulsed high-energy beam from the grain side of the bonding interface to the at least one bubble defect to form at least one venting micro-via penetrating the corresponding grain above the bubble defect, wherein the peak power of the pulsed high-energy beam is not less than 10 kW, and its single-pulse energy is not greater than 1 mJ.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for eliminating bonding interface defects, a module for eliminating bonding interface defects, a semiconductor device processing equipment, and a computer-readable storage medium. Background Technology

[0002] In the manufacturing process of semiconductor devices, wafer bonding is a key process for achieving wafer integration, and the die-to-wafer bonding structure can meet the requirements for higher integration density. However, in the actual production of die-to-wafer bonding, the bonding interface is prone to bubble defects due to residual particles on the surface and failure of gas to be released in time. If the bubble defects exceed the specifications, they will directly lead to device failure in the defect area, and may also break and generate debris in subsequent processes, causing device scratches, equipment contamination, and ultimately leading to a decrease in the yield of batch products.

[0003] Currently, the mainstream methods used in the industry to break up bubble defects in bonded structures include blade cutting and conventional laser ablation. However, these methods have significant technical drawbacks: Firstly, blade cutting and conventional laser ablation result in shallow breaking depths, requiring pre-thinning of the bonded structure to achieve effective breaking. This additional pre-grinding process significantly increases the number of steps, leading to low processing efficiency. Secondly, these methods have low breaking precision and large breaking areas, easily generating a large amount of particulate debris during the breaking process. This debris can easily scratch the precision circuitry on the surface of the device, necessitating a subsequent cleaning process to remove the debris. This not only further reduces processing efficiency but also introduces the risk of secondary damage during cleaning and breaking.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a bonding interface defect elimination technology to treat bubble defects in grain-wafer bonding components, thereby avoiding the scrapping of the entire wafer or even equipment downtime in the subsequent grinding process. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0007] To overcome the aforementioned defects in the prior art, the present invention provides a method for eliminating bonding interface defects, a module for eliminating bonding interface defects, a semiconductor device processing equipment, and a computer-readable storage medium for treating bubble defects in grain-wafer bonding components, thereby avoiding the scrapping of the entire wafer or even equipment downtime in subsequent polishing processes.

[0008] Specifically, the method for eliminating bonding interface defects according to the first aspect of the present invention includes the following steps: positioning at least one bubble defect on the bonding interface of a grain-wafer bonding member; and applying a pulsed high-energy beam from the grain side of the bonding interface to at least one bubble defect to form at least one venting micro-hole penetrating the corresponding grain above the bubble defect, wherein the peak power of the pulsed high-energy beam is not less than 10kW, and its single pulse energy is not greater than 1mJ.

[0009] Furthermore, in some embodiments of the present invention, the step of locating at least one bubble defect on the bonding interface of the grain-wafer bond includes: scanning the grain-wafer bond from the grain side of the bonding interface to determine the coordinate position of the at least one bubble defect on the bonding interface.

[0010] Furthermore, in some embodiments of the present invention, the step of applying a pulsed high-energy beam from the grain side of the bonding interface to at least one of the bubble defects to form at least one venting micro-hole penetrating the corresponding grain above the bubble defect includes: causing the pulsed high-energy beam to form at least one pulsed high-energy spot with a diameter not greater than 10 μm on the surface of the corresponding grain above the bubble defect, so as to form at least one venting micro-hole with a diameter not greater than 10 μm on the bubble defect.

[0011] Furthermore, in some embodiments of the present invention, the step of applying a pulsed high-energy beam from the grain side of the bonding interface to at least one of the bubble defects to form at least one venting micro-via through the corresponding grain above the bubble defect includes: scanning the thickness of the corresponding grain above the bubble defect via a confocal displacement sensor and determining the ablation depth of the venting micro-via accordingly; and determining control parameters of the pulsed high-energy beam based on the ablation depth of the venting micro-via, wherein the control parameters include at least one of high-energy beam type, peak power, single pulse energy, and single pulse duration.

[0012] Furthermore, in some embodiments of the present invention, the step of providing a purge gas flow to the bubble defect during the application of a pulsed high-energy beam to at least one of the bubble defects is further included.

[0013] Furthermore, in some embodiments of the present invention, the step of providing a purge gas flow to the bubble defect during the application of a pulsed high-energy beam to at least one of the bubble defects includes: determining the ablation depth of each of the exhaust micro-holes; and in response to the ablation depth of any of the exhaust micro-holes reaching a preset depth threshold, providing a purge gas flow to the corresponding bubble defect during the application of the pulsed high-energy beam to it.

[0014] Furthermore, in some embodiments of the present invention, the step of providing a purge gas flow to the bubble defect during the application of a pulsed high-energy beam to at least one of the bubble defects includes: determining the average power of the pulsed high-energy beam applied to each of the bubble defects; and in response to the average power of any of the pulsed high-energy beams reaching a preset power threshold, providing a purge gas flow to the corresponding bubble defect during the application of the pulsed high-energy beam to the corresponding bubble defect.

[0015] Furthermore, the bonding interface defect elimination module provided according to the second aspect of the present invention includes: a fixing part for fixing a grain-wafer bonding member and exposing its bonding interface; a displacement mechanism connecting the fixing part and / or a high-energy beam emitter for adjusting the relative position between the fixing part and the high-energy beam emitter so that the high-energy beam emitter is aligned with at least one bubble defect on the bonding interface; and a high-energy beam emitter located on the grain side of the bonding interface and facing the bonding interface for applying a pulsed high-energy beam to at least one of the bubble defects to form at least one exhaust micro-hole penetrating the corresponding grain above the bubble defect, wherein the peak power of the pulsed high-energy beam is not less than 10 kW and its single pulse energy is not greater than 1 mJ.

[0016] Furthermore, in some embodiments of the present invention, the elimination module further includes: a defect positioning mechanism for positioning at least one bubble defect on the bonding interface of the grain-wafer bonding member; and / or an optical system located between the high-energy beam emitter and the fixing part for focusing the pulsed high-energy beam output by the high-energy beam emitter onto the surface of the corresponding grain above the bubble defect to form at least one pulsed high-energy spot with a diameter not greater than 10 μm; and / or a confocal displacement sensor for scanning the thickness of the corresponding grain above the bubble defect; and / or a processor for determining the control parameters of the pulsed high-energy beam according to the ablation depth of the exhaust micro-via; and / or a purge gas source for providing a purge gas flow to the bubble defect.

[0017] Furthermore, the semiconductor device processing apparatus provided according to a third aspect of the present invention includes: a bonding module for bonding a die to a bonding interface of a wafer to form a die-wafer bond; and a bonding interface defect elimination module as described in the second aspect of the present invention, located at the rear end of the bonding module, for eliminating at least one bubble defect on the bonding interface of the die-wafer bond.

[0018] Furthermore, in some embodiments of the present invention, the processing equipment further includes: a grinding mechanism located at the rear end of the elimination module, used to perform grinding and thinning treatment on the wafer side of the grain-wafer bond after the bubble defects have been eliminated.

[0019] Furthermore, according to the fourth aspect of the present invention, a computer-readable storage medium has computer instructions stored thereon. When the computer instructions are executed by a processor, the method for eliminating bonding interface defects as described in any one of the first aspects of the present invention is implemented. Attached Figure Description

[0020] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0021] Figure 1 A schematic diagram of the structure of a semiconductor device processing apparatus provided according to some embodiments of the present invention is shown.

[0022] Figure 2 A schematic diagram of the structure of a bonding interface defect elimination module provided according to some embodiments of the present invention is shown.

[0023] Figure 3 A flowchart illustrating a method for eliminating bonding interface defects according to some embodiments of the present invention is shown.

[0024] Figures 4A-4C A schematic diagram of an apparatus for an elimination process according to some embodiments of the present invention is shown.

[0025] Figure reference numerals;

[0026] 10. Semiconductor device processing equipment

[0027] 11 Bonding Module

[0028] 111 grains

[0029] 112 wafer

[0030] 113 Defects

[0031] 114 Exhaust micro-hole

[0032] 12. Module for Eliminating Bonding Interface Defects

[0033] 121 Fixing part

[0034] 122 Displacement Mechanism

[0035] 123 High-energy beam emitter

[0036] 124 Defect Location Mechanism

[0037] 125 Optical System

[0038] 126 Confocal Displacement Sensor

[0039] 127 processor

[0040] 128. Purge gas source

[0041] 13 Grinding Mechanism Detailed Implementation

[0042] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0043] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0044] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0045] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0046] As mentioned above, wafer bonding is a key process for achieving wafer integration in the manufacturing of semiconductor devices, and die-to-wafer bonding structures can meet higher integration requirements. However, in the actual production of die-to-wafer bonding, the bonding interface is prone to bubble defects due to residual particles on the surface and failure of gas to be released in time. If the bubble defects exceed the specifications, they will directly lead to device failure in the defect area, and may also break and generate debris in subsequent processes, causing device scratches, equipment contamination, and ultimately leading to a decrease in the yield of batch products.

[0047] Currently, the mainstream methods used in the industry to break up bubble defects in bonded structures include blade cutting and conventional laser ablation. However, these methods have significant technical drawbacks: Firstly, blade cutting and conventional laser ablation result in shallow breaking depths, requiring pre-thinning of the bonded structure to achieve effective breaking. This additional pre-grinding process significantly increases the number of steps, leading to low processing efficiency. Secondly, these methods have low breaking precision and large breaking areas, easily generating a large amount of particulate debris during the breaking process. This debris can easily scratch the precision circuitry on the surface of the device, necessitating a subsequent cleaning process to remove the debris. This not only further reduces processing efficiency but also introduces the risk of secondary damage during cleaning and breaking.

[0048] To overcome the aforementioned defects in the prior art, the present invention provides a method for eliminating bonding interface defects, a module for eliminating bonding interface defects, a semiconductor device processing equipment, and a computer-readable storage medium for treating bubble defects in grain-wafer bonding components, thereby avoiding the scrapping of the entire wafer or even equipment downtime in subsequent polishing processes.

[0049] In some non-limiting embodiments, the bonding interface defect elimination module provided in the second aspect of the present invention can be configured in the semiconductor device processing equipment provided in the third aspect of the present invention. The bonding interface defect elimination method provided in the first aspect of the present invention can be implemented based on the bonding interface defect elimination module provided in the second aspect of the present invention. Specifically, the bonding interface defect elimination module is configured with a memory and a controller. The memory includes, but is not limited to, the computer-readable storage medium provided in the fourth aspect of the present invention, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the bonding interface defect elimination method provided in the first aspect of the present invention.

[0050] Please refer to Figure 1 , Figure 1 A schematic diagram of the structure of a semiconductor device processing apparatus provided according to some embodiments of the present invention is shown.

[0051] like Figure 1 As shown, the semiconductor device processing equipment 10 includes a bonding module 11, a bonding interface defect elimination module 12, and a polishing mechanism 13.

[0052] In some embodiments, the bonding module 11 is used to bond dies 111 to the bonding interface of wafer 112 to form die 111-wafer 112 bonding components. Optionally, the bonding module 11 can also be used to bond wafer 112 to the bonding interface of wafer 112 to form wafer 112-wafer 112 bonding components, or to bond dies 111 to the bonding interface of die 111 to form die 111-die 111 bonding components.

[0053] In some embodiments, the bonding interface defect elimination module 12 is located at the rear end of the bonding module 11 and is used to eliminate at least one bubble defect 113 on the bonding interface of the die 111-wafer 112 bonding member.

[0054] In some embodiments, the grinding mechanism 13 is located at the rear end of the elimination module and is used to perform grinding and thinning processing on the wafer 112 side of the grain 111-wafer 112 bond after the bubble defects 113 have been eliminated.

[0055] Please refer to Figure 2 , Figure 2A schematic diagram of the structure of a bonding interface defect elimination module provided according to some embodiments of the present invention is shown.

[0056] like Figure 2 As shown, the bonding interface defect elimination module 12 includes a fixing part 121, a displacement mechanism 122, and a high-energy beam emitter 123.

[0057] In some embodiments, the fixing part 121 is used to fix the die 111-wafer 112 bonding assembly and expose its bonding interface. The bonding module 11 and the bonding interface defect elimination module 12 may share the fixing part 121 (e.g., the fixing part may be a bonding head). After the bonding of the die 111 and the wafer 112 is completed, the die 111-wafer 112 bonding assembly moves together to the rear bonding interface defect elimination module 12 for subsequent bubble defect 113 positioning and bubble defect 113 elimination processing.

[0058] In some embodiments, the displacement mechanism 122 connects the fixing part 121 and / or the high-energy beam emitter 123 to adjust the relative position between the fixing part 121 and the high-energy beam emitter 123 so that the high-energy beam emitter 123 is aligned with at least one bubble defect 113 on the bonding interface.

[0059] In some embodiments, the high-energy beam emitter 123 is located on the grain 111 side of the bonding interface and faces the bonding interface, and is used to apply a pulsed high-energy beam to at least one bubble defect 113 to form at least one exhaust micro-hole 114 penetrating the corresponding grain 111 above the bubble defect 113. The peak power of the pulsed high-energy beam is not less than 10 kW, and its single pulse energy is not greater than 1 mJ.

[0060] Here, the present invention applies high peak power instantaneous absorption energy to the bubble defect 113 of the bonding component on the die 111 side, and precisely controls the energy by applying low single pulse energy, so that the silicon material at the defect 113 location undergoes an instantaneous phase transition from solid to plasma state. This increases the upper limit of the perforation depth while reducing the breaking area and particle debris, thereby reducing process limitations, reducing process steps and improving the quality of interface defect elimination, so as to avoid the scrapping of the entire wafer or even equipment downtime in the subsequent polishing process.

[0061] Furthermore, this pulsed high-energy beam process can eliminate the need for pre-grinding, which is required in traditional processes because it is impossible to process deep holes that meet the requirements, thereby improving processing efficiency from the process stage.

[0062] Optionally, the thickness of the wafer 112 can be between 50um and 775um, and the thickness of the die 111 can be between 10um and 775um.

[0063] Please continue to refer to this. Figure 2 The bonding interface defect elimination module 12 also includes a defect positioning mechanism 124 and / or an optical system 125 and / or a confocal displacement sensor 126 and / or a processor 127 and / or a purge air source 128.

[0064] In some embodiments, the defect location mechanism 124 is used to locate at least one bubble defect 113 on the bonding interface of the die 111-wafer 112 bonding member. For example, an acoustic scanning microscope and an optical positioning system. Here, the acoustic scanning microscope may also be located in the bonding module 11, or between the bonding module 11 and the elimination module.

[0065] In some embodiments, the pulsed high-energy beam is preferably a laser beam. The optical system 125 is located between the high-energy beam emitter 123 and the fixing part 121, and is used to focus the pulsed high-energy beam output by the high-energy beam emitter 123 onto the surface of the corresponding grain 111 above the bubble defect 113 to form at least one pulsed high-energy spot with a diameter not greater than 10 μm.

[0066] In some embodiments, the confocal displacement sensor 126 is used to scan the thickness of the corresponding grain 111 above the bubble defect 113. The processor 127 is used to determine the control parameters of the pulsed high-energy beam based on the ablation depth of the exhaust micro-via 114. The purge gas source 128 is used to provide a purge gas flow to the bubble defect 113.

[0067] The working principle of the above-mentioned bonding interface defect elimination module will be described below with reference to embodiments of some bonding interface defect elimination methods. Those skilled in the art will understand that these embodiments of bonding interface defect elimination methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or all working methods of the above-mentioned bonding interface defect elimination module. Similarly, the above-mentioned bonding interface defect elimination module is also merely a non-limiting implementation provided by the present invention, and does not constitute a limitation on the executing entity or execution order of the steps in these bonding interface defect elimination methods.

[0068] Please refer to the reference. Figure 3 and Figures 4A-4C , Figure 3 A flowchart illustrating a method for eliminating bonding interface defects according to some embodiments of the present invention is shown. Figures 4A-4C A schematic diagram of an apparatus for an elimination process according to some embodiments of the present invention is shown.

[0069] like Figure 3 and Figure 4AAs shown, the method for eliminating bonding interface defects can first perform step S1: locate at least one bubble defect 113 on the bonding interface of the grain 111-wafer 112 bonding component.

[0070] Specifically, the bonding member between the grain 111 and the wafer 112 is scanned from the grain 111 side of the bonding interface to determine the coordinate position of at least one bubble defect 113 on the bonding interface.

[0071] Here, the scan can preferably be, but is not limited to, acoustic scanning, and is performed using an acoustic scanning microscope. The acoustic scan can first scan the bonding interface of the die 111-wafer 112 bond using an acoustic scanning microscope to determine the first coordinates of at least one bubble defect 113 in the bonding interface coordinate system of the die 111-wafer 112 bond, and input these first coordinates into the bonding interface defect elimination module 12. Then, the bonding interface defect elimination module 12 can determine the second coordinates of the die 111-wafer 112 bond in the elimination module coordinate system using an optical positioning system, and then perform coordinate transformation on the first coordinates based on the second coordinates to determine the third coordinates of at least one bubble defect 113 in the elimination module coordinate system.

[0072] Please refer to the reference. Figure 3 and Figure 4B After determining the third coordinate of at least one bubble defect 113 in the elimination module coordinate system, the bonding interface defect elimination module 12 can also obtain the thickness of the grain 111 so as to provide control parameters for subsequent bubble degassing.

[0073] In some embodiments, the present invention can scan the thickness of the corresponding grain 111 above the bubble defect 113 via a confocal displacement sensor 126, and determine the ablation depth of the venting micro-via 114 accordingly. Then, based on the ablation depth of the venting micro-via 114, control parameters for the pulsed high-energy beam are determined. The control parameters include at least one of the high-energy beam type (e.g., laser beam, electron beam, ion beam), peak power, single-pulse energy, and single-pulse duration.

[0074] Furthermore, the present invention can pre-construct, calibrate / train a mapping model of ablation depth and control parameters. Thus, during the process of eliminating bubble defects 113 at the bonding interface, the processor 127 only needs to input the grain thickness 111 collected by the confocal displacement sensor 126, or the ablation depth calculated therefrom, into the mapping model of ablation depth and control parameters to quickly determine the control parameters of the pulsed high-energy beam.

[0075] Optionally, the present invention may also construct and calibrate correspondence tables for ablation depth-high-energy beam type, ablation depth-peak power, ablation depth-single-pulse energy, and ablation depth-single-pulse duration, and determine the control parameters required to obtain the corresponding ablation depth by using the lookup table (LUT) method.

[0076] Those skilled in the art will understand that the step of scanning the thickness of the corresponding grain 111 above the bubble defect 113 via the confocal displacement sensor 126 is merely a non-limiting embodiment provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide some specific solutions that are easy for the public to implement, rather than being used to limit the method of obtaining the thickness of the grain 111. For example, for a grain 111 with a known thickness, there is no need to measure it; the ablation depth can be determined directly based on the known thickness of the grain 111.

[0077] Please refer to the reference. Figure 3 and Figure 4C After locating at least one bubble defect 113 on the bonding interface of the die 111-wafer 112 bonding member, the bonding interface defect elimination module 12 can perform step S2: apply a pulsed high-energy beam from the die 111 side of the bonding interface to at least one bubble defect 113 to form at least one exhaust micro-hole 114 penetrating the corresponding die 111 above the bubble defect 113.

[0078] Specifically, the bonding interface defect elimination module 12 can cause a pulsed high-energy beam to form at least one pulsed high-energy spot with a diameter of no more than 10 μm on the surface of the grain 111 above the bubble defect 113, thereby forming at least one exhaust micro-hole 114 with a diameter of no more than 10 μm on the bubble defect 113. Here, the peak power of the pulsed high-energy beam can be no less than 10 kW (e.g., 10 kW-10 GW), and its single pulse energy can be no more than 1 mJ (e.g., 1 μJ-1 mJ), so as to open a micro-hole with a depth of 35 μm-775 μm on the surface of the silicon grain 111. In addition, the duration of the single pulse can be no more than 100 ps (e.g., 100 fs-100 ps).

[0079] Furthermore, the bonding interface defect elimination module 12 can use a focusing lens to align the pulsed high-energy beam with the surface of the corresponding grain 111 above the bubble defect 113. Specifically, after the pulsed high-energy beam is transmitted to the focusing lens, the beam energy is focused along the optical path towards the designated focal point, which is precisely aligned with the surface position of the corresponding grain 111 above the bubble defect 113. By adjusting the focal length, curvature parameters of the focusing lens, as well as the incident angle and energy distribution of the beam, the converged high-energy beam forms a concentrated spot on the surface of the grain 111. At the same time, by matching the pulse parameters of the beam with the optical performance of the focusing lens, the spot size is strictly controlled, ultimately forming a pulsed high-energy spot with a diameter of no more than 10 μm at the target position, and the spot position precisely corresponds to the bubble defect 113.

[0080] Therefore, using a focusing lens to form a through-hole allows for precise focusing of the pulsed high-energy beam energy onto the target location of the bubble defect 113, significantly increasing energy density, effectively increasing the perforation depth, and improving processing efficiency. Simultaneously, it allows for precise control of the spot size, strictly limiting the breaking range, avoiding damage to the precision circuit areas of the surrounding grains 111 of the defect 113, reducing debris generation, lowering the risk of device scratches, and significantly improving the processing yield.

[0081] Furthermore, in some embodiments, the method for eliminating bonding interface defects 113 can also provide a purging airflow to bubble defects 113 during the application of a pulsed high-energy beam to at least one bubble defect 113, thereby dynamically purging particulate debris.

[0082] Specifically, the bonding interface defect elimination module 12 can first determine the ablation depth of each venting micro-hole 114. Then, in response to any venting micro-hole 114 reaching a preset depth threshold, a purge airflow is provided to the corresponding bubble defect 113 during the application of a pulsed high-energy beam. Here, this depth threshold can be between 35µm and 775µm, thereby reducing problems such as beam deflection, focus shift, and lens contamination that may occur due to continuous air blowing.

[0083] Furthermore, the bonding interface defect elimination module 12 can first scan the thickness of the corresponding grain 111 above the bubble defect 113 via the confocal displacement sensor 126, and determine the ablation depth of the exhaust micro-hole 114 accordingly.

[0084] Optionally, the bonding interface defect elimination module 12 can first determine the average power of the pulsed high-energy beam applied to each bubble defect 113. Then, in response to the average power of any pulsed high-energy beam reaching a preset power threshold, a purge airflow is provided to the corresponding bubble defect 113 during the application of the pulsed high-energy beam. Here, the power threshold can be between 1W and 100W, thereby reducing processing quality problems such as excessively large micro-via opening area or particle debris that may occur due to excessively high or low ambient temperatures around the via.

[0085] Furthermore, the bonding interface defect elimination module 12 can determine the average power of the pulsed high-energy beam applied to each bubble defect 113 based on the control parameters of the pulsed high-energy beam applied to each bubble defect 113. Specifically, the bonding interface defect elimination module 12 first retrieves the pulsed high-energy beam control parameters corresponding to each bubble defect 113, including core parameters such as single pulse energy, pulse frequency, and duration of action. It then converts these parameters into the real-time average power of the beam acting on the bubble defect 113 using a preset algorithm, while simultaneously setting a power threshold matching the process requirements as a judgment criterion. The module continuously calculates and monitors the average power of each beam in real time, dynamically comparing the calculated value with the threshold. If the average power of the beam corresponding to any bubble defect 113 is detected to reach the threshold, a purge airflow control command is immediately triggered, thereby synchronously supplying purge airflow to the bubble defect 113 region throughout the entire micro-via machining process, achieving linkage control between beam parameters and purge actions.

[0086] In summary, the bonding interface defect elimination method, bonding interface defect elimination module, semiconductor device processing equipment, and computer-readable storage medium provided by this invention can be used to treat bubble defects in grain-wafer bonding components, thereby avoiding the scrapping of the entire wafer or even equipment downtime in subsequent polishing processes.

[0087] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0088] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for eliminating a bonding interface defect, characterized by, Includes the following steps: At least one bubble defect is located at the bonding interface of the grain-wafer bond; and A pulsed high-energy beam is applied from the grain side of the bonding interface to at least one of the bubble defects to form at least one exhaust micro-hole penetrating the corresponding grain above the bubble defect, wherein the peak power of the pulsed high-energy beam is not less than 10kW and its single pulse energy is not greater than 1mJ.

2. The elimination method as described in claim 1, characterized in that, The step of locating at least one bubble defect on the bonding interface of the grain-wafer bond includes: The grain-wafer bond is scanned from the grain side of the bonding interface to determine the coordinate position of the at least one bubble defect on the bonding interface.

3. The elimination method as described in claim 1, characterized in that, The step of applying a pulsed high-energy beam from the grain side of the bonding interface to at least one of the bubble defects to form at least one venting micro-hole penetrating the corresponding grain above the bubble defect includes: The pulsed high-energy beam is used to form at least one pulsed high-energy spot with a diameter of no more than 10 μm on the surface of the corresponding grain above the bubble defect, so as to form at least one exhaust micro-hole with a diameter of no more than 10 μm on the bubble defect.

4. The elimination method as described in claim 1, characterized in that, The step of applying a pulsed high-energy beam from the grain side of the bonding interface to at least one of the bubble defects to form at least one venting micro-hole penetrating the corresponding grain above the bubble defect includes: The thickness of the corresponding grain above the bubble defect is scanned using a confocal displacement sensor, and the ablation depth of the exhaust micro-hole is determined accordingly; and Based on the ablation depth of the exhaust micro-hole, the control parameters of the pulsed high-energy beam are determined, wherein the control parameters include at least one of the high-energy beam type, peak power, single pulse energy, and single pulse duration.

5. The elimination method as described in claim 1, characterized in that, It also includes the following steps: During the application of a pulsed high-energy beam to at least one of the bubble defects, a purge gas flow is provided to the bubble defects.

6. The elimination method as described in claim 5, characterized in that, The step of providing a purge gas flow to the bubble defect during the application of a pulsed high-energy beam to at least one of the bubble defects includes: Determine the ablation depth of each of the aforementioned exhaust micro-holes; and In response to the ablation depth of any of the aforementioned exhaust micro-holes reaching a preset depth threshold, a purge airflow is provided to the corresponding bubble defect during the application of the pulsed high-energy beam.

7. The elimination method as described in claim 5, characterized in that, The step of providing a purge gas flow to the bubble defect during the application of a pulsed high-energy beam to at least one of the bubble defects includes: Determine the average power of the pulsed high-energy beam applied to each of the bubble defects; and In response to the average power of any of the pulsed high-energy beams reaching a preset power threshold, a purge airflow is provided to the corresponding bubble defect during the application of the pulsed high-energy beam to the corresponding bubble defect.

8. A module for eliminating bonding interface defects, characterized in that, include: The fixing part is used to fix the grain-wafer bonding component and expose its bonding interface; A displacement mechanism, connecting the fixing part and / or the high-energy beam emitter, is used to adjust the relative position between the fixing part and the high-energy beam emitter so that the high-energy beam emitter is aligned with at least one bubble defect on the bonding interface; as well as A high-energy beam emitter, located on the grain side of the bonding interface and facing the bonding interface, is used to apply a pulsed high-energy beam to at least one of the bubble defects to form at least one exhaust micro-hole penetrating the corresponding grain above the bubble defect, wherein the peak power of the pulsed high-energy beam is not less than 10kW and its single pulse energy is not greater than 1mJ.

9. The elimination module as described in claim 8, characterized in that, Also includes: A defect locating mechanism is used to locate at least one bubble defect at the bonding interface of the grain-wafer bond; and / or An optical system, located between the high-energy beam emitter and the fixing part, is used to focus the pulsed high-energy beam output by the high-energy beam emitter onto the surface of the corresponding grain above the bubble defect, so as to form at least one pulsed high-energy spot with a diameter not greater than 10 μm; and / or A confocal displacement sensor is used to scan the thickness of the corresponding grain above the bubble defect; and / or The processor is configured to determine the control parameters of the pulsed high-energy beam based on the ablation depth of the exhaust micro-via; and / or A purge air source is used to provide a purge airflow to the bubble defects.

10. A semiconductor device processing apparatus, characterized in that, include: The bonding module is used to bond the die to the bonding interface of the wafer to form a die-wafer bond. as well as The bonding interface defect elimination module as described in claim 8 is located at the rear end of the bonding module and is used to eliminate at least one bubble defect on the bonding interface of the grain-wafer bonding component.

11. The processing equipment as described in claim 10, characterized in that, Also includes: The grinding mechanism, located at the rear end of the elimination module, is used to perform grinding and thinning treatment on the wafer side of the grain-wafer bond after the bubble defects have been eliminated.

12. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the method for eliminating bonding interface defects as described in any one of claims 1 to 7 is implemented.

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