Oxide sputter target and method of manufacturing the same
By controlling the sintering conditions and atmosphere, an oxide sputtering target with low volume resistivity and high relative density was prepared, solving the density and resistivity problems of tin oxide sputtering targets in the prior art, and realizing stable DC sputtering and high-quality thin film formation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JX NIPPON MINING & METALS CORP
- Filing Date
- 2024-10-25
- Publication Date
- 2026-06-09
AI Technical Summary
Existing tin oxide sputtering targets have high volume resistivity after the addition of niobium, making it impossible to stably perform high-speed DC sputtering. Furthermore, the reduction of tin oxide during sintering via hot pressing or hot isostatic pressing results in low relative density, making it difficult to form high-density sintered bodies.
By controlling the sintering conditions, a mixture of SnO2 powder and Nb2O5 powder is sintered at a temperature above 1400℃ and below 1550℃ under an atmospheric or oxygen atmosphere, combined with an appropriate cooling rate, an oxide sputtering target containing niobium, tin and oxygen is prepared, ensuring that the relative density reaches above 99.5% and the volume resistivity is below 100Ω·cm.
This invention achieves a low volume resistivity and high relative density oxide sputtering target, reduces particle generation during sputtering, ensures stable DC sputtering performance, and is suitable for thin film formation of transparent electrodes and semiconductor devices.
Smart Images
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