Method and device for evaluating junction temperature of power module, computer device and storage medium

Abstract

The application relates to a junction temperature evaluation method and device of a power module, a computer device and a storage medium. The method comprises the following steps: obtaining the maximum thermal resistance of a power module to be evaluated, the initial temperature of the power module and the target power loss of the power module under a target working condition; the maximum thermal resistance is obtained by performing finite element simulation on the power module under a preset power loss; and the maximum junction temperature of the power module under the target working condition is obtained according to the target power loss, the maximum thermal resistance of the power module and the initial temperature of the power module. Thus, the application only needs to perform finite element simulation once to obtain the maximum thermal resistance of the power module, and after the maximum thermal resistance is obtained, the maximum junction temperature of the power module under different target working conditions can be obtained without repeatedly performing finite element simulation according to the power loss under different target working conditions, so that the junction temperature evaluation efficiency of the power module is improved.

Description

Technical Field

[0001] This application relates to the field of junction temperature estimation technology, and in particular to a method, apparatus, computer device, and computer-readable storage medium for evaluating the junction temperature of a power module. Background Technology

[0002] Currently, the main methods for evaluating the junction temperature of power modules are practical testing and simulation. Practical testing requires the fabrication of a physical module, which is costly, time-consuming, and inefficient. Simulation, on the other hand, does not require physical fabrication, has lower manufacturing costs, and significantly shortens the R&D process. Therefore, simulation has become the primary method for evaluating junction temperature.

[0003] In related technologies, the finite element method is used to evaluate junction temperature. The finite element method needs to consider multiple factors such as power loss, pressure, and flow rate for coupled solution calculation, which results in a large amount of computation and a long simulation time.

[0004] However, power loss needs to be modified for different operating conditions, and finite element simulation needs to be performed again based on the modified power loss, which leads to a significant decrease in the efficiency of junction temperature assessment. Summary of the Invention

[0005] Therefore, it is necessary to provide a method, apparatus, computer device, and computer-readable storage medium for evaluating the junction temperature of power modules that can improve the efficiency of junction temperature evaluation, in order to address the above-mentioned technical problems.

[0006] Firstly, this application provides a method for evaluating the junction temperature of a power module, the method comprising:

[0007] The maximum thermal resistance, initial temperature, and target power loss of the power module under target operating conditions are obtained for the power module to be evaluated. The maximum thermal resistance is obtained by finite element simulation of the power module under the preset power loss.

[0008] Based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, the maximum junction temperature of the power module under the target operating conditions is obtained.

[0009] In one embodiment, the maximum junction temperature of the power module under the target operating condition is obtained based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, including:

[0010] Multiply the target power loss by the maximum thermal resistance of the power module to obtain the product result;

[0011] Add the product result to the initial temperature of the power module to obtain the maximum junction temperature of the power module under the target operating conditions.

[0012] In one embodiment, obtaining the maximum thermal resistance of the power module to be evaluated includes:

[0013] Based on the preset power loss, finite element simulation was performed on the power module to obtain the maximum junction temperature of the power module;

[0014] The maximum thermal resistance of the power module is obtained based on the maximum junction temperature of the power module, the initial temperature of the power module, and the preset power loss.

[0015] In one embodiment, obtaining the target power loss of the power module under the target operating condition includes:

[0016] Obtain the conduction loss and switching loss of the power module under the target operating conditions;

[0017] Based on the conduction loss and switching loss, the target power loss of the power module under the target operating conditions is obtained.

[0018] In one embodiment, obtaining the conduction loss of the power module under the target operating condition includes:

[0019] Obtain the channel conduction loss and diode conduction loss of the power module under target operating conditions;

[0020] The channel conduction loss and the diode conduction loss are added together to obtain the conduction loss of the power module under the target operating condition.

[0021] In one embodiment, obtaining the switching loss of the power module under the target operating condition includes:

[0022] Acquire the power module’s turn-on loss, turn-off loss, and output capacitor loss under the target operating conditions;

[0023] The switching losses of the power module under the target operating condition are obtained by adding the turn-on losses, turn-off losses, and output capacitor losses together.

[0024] In one embodiment, obtaining the switching loss of the power module under the target operating condition includes:

[0025] Acquire the power module’s turn-on energy, turn-off energy, capacitor-stored energy, and switching frequency under target operating conditions;

[0026] Add the energy for turning on, the energy for turning off, and the energy stored in the capacitor to obtain the total energy;

[0027] Multiply the total energy by the switching frequency to obtain the switching loss of the power module under the target operating condition.

[0028] Secondly, this application also provides a junction temperature evaluation device for a power module, the device comprising:

[0029] The maximum thermal resistance acquisition unit is used to acquire the maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating conditions; the maximum thermal resistance is obtained by performing finite element simulation on the power module under the preset power loss.

[0030] The maximum junction temperature acquisition unit is used to obtain the maximum junction temperature of the power module under the target operating conditions based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module.

[0031] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the method steps of the first aspect.

[0032] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method steps of the first aspect.

[0033] The aforementioned method, apparatus, computer equipment, and computer-readable storage medium for evaluating the junction temperature of power modules obtain the maximum thermal resistance, initial temperature, and target power loss of the power module under target operating conditions. The maximum thermal resistance is obtained through finite element simulation of the power module under a preset power loss. Based on the target power loss, the maximum thermal resistance, and the initial temperature, the maximum junction temperature of the power module under the target operating conditions is obtained. Thus, this application requires only one finite element simulation to obtain the maximum thermal resistance of the power module. After obtaining the maximum thermal resistance, for different power losses under different target operating conditions, it is not necessary to repeat the finite element simulation to obtain the maximum junction temperature of the power module under different target operating conditions, thereby improving the efficiency of junction temperature evaluation of power modules. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a diagram illustrating the application environment of a power module junction temperature assessment method in one embodiment.

[0036] Figure 2 This is a flowchart illustrating a method for evaluating the junction temperature of a power module in one embodiment;

[0037] Figure 3This is a flowchart of a power module junction temperature assessment in one embodiment;

[0038] Figure 4 This is a structural block diagram of a junction temperature evaluation device for a power module in one embodiment;

[0039] Figure 5 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0041] It should be noted that the terms "first," "second," etc., used in this application can be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from the second element. The terms "comprising" and "having," and any variations thereof, used in this application, are intended to cover non-exclusive inclusion. The term "multiple" used in this application refers to two or more. The term "and / or" used in this application refers to one of the embodiments, or any combination of multiple embodiments.

[0042] The junction temperature evaluation method for power modules provided in this application can be applied to, for example... Figure 1In the application environment shown, terminal 102 communicates with server 104 via a network. A data storage system can store the data that server 104 needs to process. The data storage system can be integrated onto server 104 or placed on a cloud or other network server. Terminal 102 obtains the maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating condition. The maximum thermal resistance is obtained through finite element simulation of the power module under a preset power loss. Based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, the maximum junction temperature of the power module under the target operating condition is obtained. Terminal 102 can be, but is not limited to, various personal computers, laptops, smartphones, tablets, drones, low-altitude aircraft, IoT devices, and portable wearable devices. IoT devices can be smart speakers, smart TVs, smart air conditioners, smart in-vehicle devices, projection devices, etc. Portable wearable devices can be smartwatches, smart bracelets, head-mounted devices, etc. Head-mounted devices can be virtual reality (VR) devices, augmented reality (AR) devices, smart glasses, etc. Server 104 can be a standalone physical server, a server cluster or distributed system consisting of multiple physical servers, or a cloud server that provides cloud computing services.

[0043] In one embodiment, such as Figure 2 As shown, a method for evaluating the junction temperature of a power module is provided. This embodiment applies this method to... Figure 1 Taking terminal 102 as an example, the method includes the following steps:

[0044] Step S210: Obtain the maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating conditions; the maximum thermal resistance is obtained by performing finite element simulation on the power module under the preset power loss.

[0045] The power module can be an HPD-packaged SiC MOSFET.

[0046] The preset power loss refers to the power loss required for the maximum junction temperature of the output power module in the finite element simulation, which can be set according to the operating attributes of the power module.

[0047] The finite element simulation of the power module includes the construction of the geometric model of the power module, the definition of material properties, the setting of heat source boundaries, the partitioning of the computational domain, and the setting and calculation of the solver. For details, please refer to relevant technologies.

[0048] The initial temperature of the power module refers to the reference temperature of the power module and its surrounding environment at the start of the finite element simulation.

[0049] The target operating condition can be one or more operating conditions, and the target power loss is different under different target operating conditions.

[0050] In this embodiment, the preset power loss and initial temperature of the power module can be directly specified by the user, or the preset power loss and initial temperature of the power module can be obtained from actual measurement data.

[0051] The maximum junction temperature of the power module was obtained through finite element simulation under a preset power loss. Based on the maximum junction temperature and the initial temperature of the power module, the changing temperature of the power module was obtained. Finally, the maximum thermal resistance of the power module was obtained based on the changing temperature and the preset power loss.

[0052] The operating parameters of the power module can be adjusted to obtain the target power loss of the power module under target operating conditions. These operating parameters include, but are not limited to, the forward current, forward voltage, reverse current, reverse voltage, and switching frequency of the power module.

[0053] Step S220: Based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, obtain the maximum junction temperature of the power module under the target operating conditions.

[0054] In this embodiment, the temperature variation of the power module under the target operating condition is obtained based on the target power loss and the maximum thermal resistance of the power module. The maximum junction temperature of the power module under the target operating condition is then obtained based on the temperature variation of the power module under the target operating condition and the initial temperature of the power module.

[0055] The aforementioned method for evaluating the junction temperature of a power module involves obtaining the maximum thermal resistance, initial temperature, and target power loss of the power module under target operating conditions. The maximum thermal resistance is obtained through finite element simulation of the power module under a preset power loss. Based on the target power loss, the maximum thermal resistance, and the initial temperature, the maximum junction temperature of the power module under the target operating conditions is obtained. Thus, this application requires only one finite element simulation to obtain the maximum thermal resistance of the power module. After obtaining the maximum thermal resistance, it is not necessary to repeat the finite element simulation for different target operating conditions to obtain the maximum junction temperature of the power module under different target operating conditions, thereby improving the efficiency of junction temperature evaluation for power modules.

[0056] In one embodiment, obtaining the maximum thermal resistance of the power module to be evaluated includes:

[0057] Step S211: Based on the preset power loss, perform finite element simulation on the power module to obtain the maximum junction temperature of the power module.

[0058] In this embodiment, the preset power loss is used as the input to the finite element simulation process of the power module, and the maximum junction temperature of the power module is output through finite element simulation.

[0059] Step S212: Obtain the maximum thermal resistance of the power module based on the maximum junction temperature of the power module, the initial temperature of the power module, and the preset power loss.

[0060] In this embodiment, the maximum temperature of the power module is subtracted from its initial temperature to obtain the changed temperature of the power module. The changed temperature is then divided by a preset power loss to obtain the maximum thermal resistance of the power module. Specifically, the expression for the maximum thermal resistance of the power module is as follows:

[0061]

[0062] in, Indicates the maximum thermal resistance. Indicates changing temperature. Indicates the preset power loss. This indicates the maximum temperature of the power module. This indicates the initial temperature of the power module.

[0063] In one embodiment, obtaining the target power loss of the power module under a target operating condition includes:

[0064] Step S213: Obtain the conduction loss and switching loss of the power module under the target operating condition;

[0065] Step S214: Based on the conduction loss and switching loss, obtain the target power loss of the power module under the target operating condition.

[0066] Among them, the on-state loss of the power module refers to the power loss caused by the on-resistance generated when current flows through the power module in the on state.

[0067] Among them, the switching loss of the power module refers to the transient power loss caused by the overlap of voltage and current during the power module's turn-on and turn-off processes.

[0068] In this embodiment of the application, the expression for the target power loss is:

[0069]

[0070] in, Indicates the target power loss. Indicates the on-state loss. This indicates switching losses.

[0071] In one embodiment, obtaining the conduction loss of the power module under a target operating condition includes:

[0072] Step S2131: Obtain the channel conduction loss and diode conduction loss of the power module under the target operating conditions;

[0073] Step S2132: Add the channel conduction loss and the diode conduction loss to obtain the conduction loss of the power module under the target operating condition.

[0074] Among them, the channel conduction loss of the power module refers to the ohmic loss caused by the conduction resistance when the current passes through the channel in the power module in the conducting state.

[0075] In this context, the diode conduction loss of the power module refers to the power loss caused by the forward voltage drop and current when the diode is in the forward conduction state.

[0076] In this embodiment of the application, the expression for channel conduction loss is:

[0077]

[0078] in, This indicates the switching cycle of the power module. This indicates the power module's activation time. This represents the forward current of the power module. This indicates the forward voltage of the power module.

[0079] The expression for diode conduction loss is:

[0080]

[0081] in, This indicates the forward voltage of the diode. This indicates the forward current of the diode. Indicates dead time. Indicates the switching frequency.

[0082] It is understandable that the forward voltage of the diode is equivalent to the reverse voltage of the power module, and the forward current of the diode is equivalent to the reverse current of the power module.

[0083] The embodiments of this application can be modified. , , , , By changing parameters such as these, the conduction loss can be altered to obtain the conduction loss under different target operating conditions.

[0084] In one embodiment, obtaining the switching losses of the power module under a target operating condition includes:

[0085] Step S2133: Obtain the turn-on loss, turn-off loss, and output capacitor loss of the power module under the target operating conditions.

[0086] Step S2134: Add the turn-on loss, turn-off loss and output capacitor loss to obtain the switching loss of the power module under the target operating condition.

[0087] Among them, the power module turn-on loss refers to the energy loss generated by the power module at the moment of turn-on. During the turn-on process, the current and voltage of the power module will change. Since the rise in current and the drop in voltage are not instantaneous, there will be an overlap between the current and voltage over a certain period of time, which will generate power loss.

[0088] The power module's turn-off loss refers to the energy loss generated when the power module is turned off. Similar to the turn-on process, there is an overlapping process of current and voltage changes during turn-off, which in turn generates power loss.

[0089] Among them, the output capacitor loss of the power module refers to the energy loss caused by the charging and discharging of the output capacitor of the power device itself during the switching process.

[0090] In this embodiment of the application, the expression for turn-on loss is:

[0091]

[0092] in, Indicates bus voltage. Indicates the bus current. Indicates the device turn-on time. This indicates the loss caused by the discharge of the output capacitor at the moment of power-on.

[0093] The expression for turn-off loss is:

[0094]

[0095] in, Indicates the device turn-off time. This indicates the loss that occurs during the moment of shutdown due to the charging of the output capacitor.

[0096] The expression for output capacitor loss is:

[0097]

[0098] in, This indicates the output capacitor.

[0099] The expression for switching loss is:

[0100]

[0101] The embodiments of this application can be modified. , , By adjusting parameters such as switching loss, the switching loss under different target operating conditions can be obtained.

[0102] In one embodiment, obtaining the switching losses of the power module under a target operating condition includes:

[0103] Step S2135: Obtain the power module's turn-on energy, turn-off energy, capacitor-stored energy, and switching frequency under the target operating conditions;

[0104] Step S2136: Add the energy turned on, the energy turned off, and the energy stored in the capacitor to obtain the total energy.

[0105] Step S2137: Multiply the total energy by the switching frequency to obtain the switching loss of the power module under the target operating condition.

[0106] The activation energy refers to the energy consumed by the power module during each activation process.

[0107] Among them, shutdown energy refers to the energy consumed by the power module during each shutdown process.

[0108] Among them, the energy stored in the capacitor refers to the electrical energy stored in the output capacitor of the power module.

[0109] In this embodiment of the application, the expression for switching loss is:

[0110]

[0111] in, Indicates switching losses. This indicates that the energy has been activated. Indicates that the energy is turned off. This indicates that the capacitor stores energy.

[0112] In one embodiment, obtaining the maximum junction temperature of the power module under the target operating condition based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module includes:

[0113] Step S251: Multiply the target power loss by the maximum thermal resistance of the power module to obtain the product result;

[0114] Step S252: Add the product result to the initial temperature of the power module to obtain the maximum junction temperature of the power module under the target operating condition.

[0115] In this embodiment, the formula for calculating the maximum junction temperature (i.e., the ideal switching equation relationship) is:

[0116]

[0117] in, Indicates the maximum junction temperature. Indicates the initial temperature. This indicates the maximum thermal resistance of the power module. This indicates the target power loss.

[0118] The embodiments of this application only require one finite element simulation to obtain the maximum thermal resistance of the power module. After obtaining the maximum thermal resistance, there is no need to repeat the finite element simulation for power loss under different target operating conditions. The maximum junction temperature of the power module under different target operating conditions can be obtained by using the ideal switching equation relationship, thereby improving the junction temperature evaluation efficiency of the power module.

[0119] To facilitate understanding of the above method embodiments, as follows: Figure 3 The diagram illustrates a flowchart for evaluating the junction temperature of a power module. Specifically, a 3D model of the power module is imported, including components such as the chip, bonding wires, DBC substrate, and heat sink. Material properties for each component in the 3D model are defined, including thermal conductivity, specific heat capacity, density, and coefficient of thermal expansion. The heat source boundaries of the 3D model are set, the computational domain is divided, and a solver is configured and calculated. A preset power loss is used as input to complete the finite element simulation process (traditional thermal simulation process), outputting the maximum temperature. Based on the maximum temperature and the preset power loss, the maximum thermal resistance (highest junction temperature thermal resistance) is obtained. An ideal switch simulation process (new thermal simulation process) is then executed, including importing the ideal switch model, setting the target operating condition, configuring the solver, and calculating, outputting the maximum junction temperature of the power module under the target operating condition.

[0120] It should be understood that although the steps in the flowcharts of the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps. It is understood that the steps in different embodiments can be freely combined as needed, and all non-contradictory solutions formed by such combinations are within the scope of protection of this application.

[0121] Based on the same inventive concept, this application also provides a junction temperature evaluation device for a power module to implement the junction temperature evaluation method for the power module described above. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of one or more junction temperature evaluation device embodiments for power modules provided below can be found in the limitations of the junction temperature evaluation method for power modules described above, and will not be repeated here.

[0122] In one exemplary embodiment, please refer to Figure 4 A junction temperature evaluation device for a power module is provided, the device comprising:

[0123] The maximum thermal resistance acquisition unit 410 is used to acquire the maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating conditions; the maximum thermal resistance is obtained by performing finite element simulation on the power module under the preset power loss.

[0124] The maximum junction temperature acquisition unit 420 is used to obtain the maximum junction temperature of the power module under the target operating conditions based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module.

[0125] In one embodiment, the maximum junction temperature of the power module under the target operating condition is obtained based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, including:

[0126] Multiply the target power loss by the maximum thermal resistance of the power module to obtain the product result;

[0127] Add the product result to the initial temperature of the power module to obtain the maximum junction temperature of the power module under the target operating conditions.

[0128] In one embodiment, obtaining the maximum thermal resistance of the power module to be evaluated includes:

[0129] Based on the preset power loss, finite element simulation was performed on the power module to obtain the maximum junction temperature of the power module;

[0130] The maximum thermal resistance of the power module is obtained based on the maximum junction temperature of the power module, the initial temperature of the power module, and the preset power loss.

[0131] In one embodiment, obtaining the target power loss of the power module under the target operating condition includes:

[0132] Obtain the conduction loss and switching loss of the power module under the target operating conditions;

[0133] Based on the conduction loss and switching loss, the target power loss of the power module under the target operating conditions is obtained.

[0134] In one embodiment, obtaining the conduction loss of the power module under the target operating condition includes:

[0135] Obtain the channel conduction loss and diode conduction loss of the power module under target operating conditions;

[0136] The channel conduction loss and the diode conduction loss are added together to obtain the conduction loss of the power module under the target operating condition.

[0137] In one embodiment, obtaining the switching loss of the power module under the target operating condition includes:

[0138] Acquire the power module’s turn-on loss, turn-off loss, and output capacitor loss under the target operating conditions;

[0139] The switching losses of the power module under the target operating condition are obtained by adding the turn-on losses, turn-off losses, and output capacitor losses together.

[0140] In one embodiment, obtaining the switching loss of the power module under the target operating condition includes:

[0141] Acquire the power module’s turn-on energy, turn-off energy, capacitor-stored energy, and switching frequency under target operating conditions;

[0142] Add the energy for turning on, the energy for turning off, and the energy stored in the capacitor to obtain the total energy;

[0143] Multiply the total energy by the switching frequency to obtain the switching loss of the power module under the target operating condition.

[0144] Each module in the junction temperature evaluation device for the aforementioned power module can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the corresponding operations of each module.

[0145] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 5As shown, the computer device includes a processor, memory, input / output interfaces, a communication interface, a display unit, and an input device. The processor, memory, and input / output interfaces are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interfaces. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interfaces are used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, Near Field Communication (NFC), or other technologies. When the computer program is executed by the processor, it implements a method for evaluating the junction temperature of a power module. The display unit is used to form a visually visible image and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0146] Those skilled in the art will understand that Figure 5 The structures shown are merely block diagrams of some structures related to the present application and do not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than shown in the figures, or combine certain components, or have different component arrangements. In one embodiment, a computer device is provided, including a memory and a processor. The memory stores a computer program, which, when executed by the processor, causes the processor to perform the steps of the aforementioned junction temperature evaluation method for a power module. The steps of the junction temperature evaluation method for a power module here can be steps from the junction temperature evaluation method for a power module in the various embodiments described above.

[0147] In one embodiment, a computer-readable storage medium is provided storing a computer program that, when executed by a processor, causes the processor to perform the steps of the junction temperature evaluation method for a power module described above. The steps of the junction temperature evaluation method for a power module here can be the steps in the junction temperature evaluation method for a power module from the various embodiments described above.

[0148] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, causes the processor to perform the steps of the power module junction temperature evaluation method described above. The steps of the power module junction temperature evaluation method described here can be the steps in the power module junction temperature evaluation method of the various embodiments described above.

[0149] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.

[0150] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.

[0151] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0152] The above embodiments merely illustrate several implementation methods of this application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of this application's patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for evaluating the junction temperature of a power module, characterized in that, The method includes: The maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating conditions are obtained; the maximum thermal resistance is obtained by performing finite element simulation on the power module under the preset power loss. Based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module, the maximum junction temperature of the power module under the target operating condition is obtained.

2. The method according to claim 1, characterized in that, The step of obtaining the maximum junction temperature of the power module under the target operating condition based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module includes: Multiply the target power loss by the maximum thermal resistance of the power module to obtain the product result; The product result is added to the initial temperature of the power module to obtain the maximum junction temperature of the power module under the target operating condition.

3. The method according to claim 1, characterized in that, Obtaining the maximum thermal resistance of the power module to be evaluated includes: Based on the preset power loss, the power module is subjected to finite element simulation to obtain the maximum junction temperature of the power module; The maximum thermal resistance of the power module is obtained based on the maximum junction temperature of the power module, the initial temperature of the power module, and the preset power loss.

4. The method according to claim 1, characterized in that, The step of obtaining the target power loss of the power module under the target operating condition includes: Obtain the conduction loss and switching loss of the power module under the target operating conditions; Based on the conduction loss and the switching loss, the target power loss of the power module under the target operating condition is obtained.

5. The method according to claim 4, characterized in that, The step of obtaining the conduction loss of the power module under the target operating condition includes: Obtain the channel conduction loss and diode conduction loss of the power module under the target operating conditions; The channel conduction loss and the diode conduction loss are added together to obtain the conduction loss of the power module under the target operating condition.

6. The method according to claim 4, characterized in that, The process of obtaining the switching loss of the power module under the target operating condition includes: Obtain the turn-on loss, turn-off loss, and output capacitor loss of the power module under the target operating conditions; The switching loss of the power module under the target operating condition is obtained by adding the turn-on loss, the turn-off loss, and the output capacitor loss together.

7. The method according to claim 4, characterized in that, The process of obtaining the switching loss of the power module under the target operating condition includes: The power module's turn-on energy, turn-off energy, capacitor-stored energy, and switching frequency are obtained under the target operating conditions. The total energy is obtained by adding the energy that is turned on, the energy that is turned off, and the energy stored in the capacitor. Multiply the total energy by the switching frequency to obtain the switching loss of the power module under the target operating condition.

8. A junction temperature evaluation device for a power module, characterized in that, The device includes: The maximum thermal resistance acquisition unit is used to acquire the maximum thermal resistance of the power module to be evaluated, the initial temperature of the power module, and the target power loss of the power module under the target operating conditions; the maximum thermal resistance is obtained by performing finite element simulation on the power module under the preset power loss. The maximum junction temperature acquisition unit is used to obtain the maximum junction temperature of the power module under the target operating condition based on the target power loss, the maximum thermal resistance of the power module, and the initial temperature of the power module.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

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