System and method for temperature measurement and calibration method

Abstract

The invention relates to a system (1) and a method (100) for measuring a temperature in a process chamber (2) of a high-temperature furnace (50) for processing workpieces, in particular for processing semiconductors, and a calibration method (200) for at least one temperature measuring device (8) of a high-temperature furnace (50). The process chamber (2) has an opening (3). According to the invention, a measuring apparatus (4) is provided in front of the opening (3) for contactless determination of the temperature (T) inside the process chamber (2) through the opening (3).

Description

Technical Field

[0001] The present invention relates to a system and method for measuring temperature in a processing chamber of a high-temperature furnace for workpiece processing, more particularly for semiconductor processing, and to a calibration method for at least one temperature measuring device for a high-temperature furnace. Background Technology

[0002] Workpieces, particularly semiconductor wafers, are typically processed using high-temperature furnaces with heatable processing chambers, also known as "tubes." The workpieces are arranged in the processing chamber by means of a so-called "boat" and then heated within it to temperatures exceeding 2000°C, optionally in a vacuum or a specific gas atmosphere. This allows for processes such as diffusion, dry or wet oxidation, or annealing, for example using hydrogen (H2), argon (Ar), or nitrogen (N2).

[0003] To allow for precise initiation and control of such processes, it is desirable to monitor the temperature within the processing chamber with very high accuracy. In routine operation, temperature sensors are typically not placed inside the processing chamber due to the high temperatures, the cost and complexity associated with connections to the processing chamber (which may be hermetically sealed), and the potential for contamination by sensor materials. Therefore, temperature measuring devices are usually placed outside the processing chamber to indirectly determine the temperature. These external temperature measuring devices (e.g., in the form of pyrometers or thermocouples) measure the temperature of the processing chamber walls or insulation from an external location—that is, they measure the external temperature of the processing chamber from which the internal temperature is derived. However, to do this, the external temperature measuring devices must be pre-calibrated accordingly.

[0004] Calibration of external temperature measuring devices is typically performed using thermocouples, which are inserted into the processing chamber through openings that are normally closed. An associated problem is that, for example, especially at temperatures of 1500°C or higher, thermocouples may introduce measurement errors (which can be considerable in some cases), and / or may contain substances that volatilize at these temperatures and could contaminate the processing chamber. Above 1700°C, the likelihood of failure is even greater. Summary of the Invention

[0005] In this context, the object of the present invention is to improve the calibration of temperature measurement in the processing chamber and external temperature measurement devices, and more particularly to make them more accurate and / or reliably calibrated even at temperatures above 1700°C.

[0006] This objective is achieved by the system and method for determining temperature in the processing chamber of a high-temperature furnace for workpiece processing, as claimed in the independent claims, and the calibration method for at least one temperature measuring device for the high-temperature furnace.

[0007] The preferred embodiments are the subject of the dependent claims and the description below.

[0008] According to a first aspect of the invention, a system for determining temperature in a processing chamber of a high-temperature furnace for workpiece processing, more particularly for semiconductor processing, includes a heatable processing chamber, particularly for accommodating the workpiece to be processed. The processing chamber includes an opening. According to the invention, a measuring device is provided, arranged in front of the opening, particularly outside the processing chamber, i.e., specifically and intended for non-contact determination of the temperature inside the processing chamber through an optionally sealed opening.

[0009] In the context of this invention, such a measuring device is preferably configured for detecting electromagnetic radiation, particularly thermal or infrared radiation. The measuring device can be specifically implemented as a pyrometer, for example. The measuring device is capable of determining the temperature of the target by detecting the electromagnetic radiation emitted by the target, and more particularly by a region of its surface.

[0010] The processing chamber has a defined processing volume in which the workpieces to be processed can be arranged.

[0011] In the context of this invention, the opening of the processing chamber is preferably an inlet to the processing volume within the processing chamber, through which electromagnetic radiation from at least one wavelength range (e.g., the infrared range) can enter and / or exit the processing chamber. If the opening can be sealed with a seal, more particularly airtight (e.g., hermetically sealed), it advantageously includes a window. In this case, the window is preferably permeable to electromagnetic radiation from at least one wavelength range (e.g., the infrared range) to allow non-contact measurement of the temperature within the processing chamber from the outside. In this sense, the window defines the inlet to the processing volume.

[0012] To prevent contamination of the processing volume within the processing chamber through openings, as an alternative to seals, it is conceivable to protect the processing volume using a protective gas (e.g., argon) introduced into it. In this case, since the protective gas advantageously transmits electromagnetic radiation, the temperature within the processing chamber can also be determined non-contactly using the protective gas.

[0013] One aspect of the invention is based on a method for performing non-contact, radiation-based temperature measurement in the processing chamber of a high-temperature furnace used for workpiece processing, and more particularly for semiconductor processing. For this purpose, a corresponding measuring device, such as a pyrometer, is arranged in front of the opening of the processing chamber. By means of this measuring device, the temperature inside the processing chamber, and more particularly the surface temperature of the target, can be determined through an optionally sealed opening (e.g., through a window in a seal or through a protective gas atmosphere). Therefore, the temperature can be determined in situ from outside the processing chamber. Arranging the measuring device in front of the processing chamber window particularly makes it possible to reference any temperature scale in situ. In particular, temperatures above 1700°C can also be reliably detected in situ.

[0014] The problems arising from this non-contact temperature determination through the processing chamber opening can be the ultimate geometric limitation on the field of view of the measuring device. In particular, thermal insulation devices used for insulation of the opening area (e.g., processing chamber seals for the processing volume within the processing chamber) can hinder non-contact temperature determination within the processing volume because the measurement must be performed not only through the opening but also through adjacent openings in the thermal insulation device and through a narrow passage leading to the processing volume.

[0015] Therefore, in a preferred embodiment, a manipulating device is provided for aligning the detection area of ​​the measuring device. The manipulating device can, for example, be configured to position the detection area of ​​the measuring device relative to the processing chamber and any components arranged within the processing chamber, i.e., to change the position of the detection area, particularly relative to the longitudinal axis of the processing chamber. This prevents portions of openings or their seals and / or insulation devices, more particularly portions of the channel walls, from being located within the detection area. Specifically, the detection area can thus be aligned with a measurement target in the processing volume for which a temperature will be determined.

[0016] In the context of this invention, the detection area is preferably the area in which the measuring device detects temperature and / or corresponding electromagnetic radiation.

[0017] For example, alignment of the detection area can be achieved by manipulating the beam path of electromagnetic radiation detected by the measuring device. Therefore, it is advantageous to implement the manipulating device as an optical system, or at least include an optical system. The optical system allows electromagnetic radiation from the processing volume in the processing chamber to be imaged onto the measuring device, and more particularly onto the corresponding sensor of the measuring device, through channels and openings in the thermal insulation.

[0018] Alternatively or additionally, by manipulating the arrangement of the measuring device in front of the processing chamber opening—that is, by changing the position and / or alignment of the measuring device relative to the processing chamber—the detection area can be aligned in a particularly simple, low-cost, and low-complexity manner. Therefore, the manipulating device advantageously includes a positioning device, such as an actuator, for moving the measuring device relative to the processing chamber. Here, the possibilities arising from the movement of the positioning device are particularly the (re)positioning of the measuring device to, for example, specified coordinates and the (re)alignment of the measuring device to, for example, a specified direction. Compared to optical systems, positioning devices have the advantage of being lighter and more robust.

[0019] In order to allow the measuring device to be optimally positioned and aligned, i.e., to prevent the detection area of ​​the measuring device from aligning with the measurement target, and thus, for example, to prevent the detection of electromagnetic radiation originating from the channel surface of the channel in the insulation device, the positioning device is preferably configured to move the measuring device in at least two degrees of freedom. Particularly preferably, the positioning device is configured to i) position the measuring device with respect to at least two translational degrees of freedom, more particularly for translation of the measuring device in a plane parallel to the opening, and ii) align the measuring device with respect to two rotational degrees of freedom, more particularly for tilting the measuring device relative to the longitudinal axis of the processing chamber.

[0020] After such alignment of the detection area of ​​the measuring device, the temperature determined by the measuring device can be used to calibrate an external temperature measuring device, and more specifically, even beyond the temperature range detectable by conventional thermocouples. For example, the temperature inside the processing chamber, precisely determined by the measuring device based on its pre-alignment, can be designated as the measurement value of at least one (external) temperature measuring device. Control devices can be set up for this purpose.

[0021] Because electromagnetic radiation detected by the measuring device may be affected by its transmission through openings (e.g., windows in seals), it is equally beneficial to calibrate the measuring device, especially prior to the calibration of the external temperature measuring device. For this purpose, it is preferable to provide at least one temperature reference device, which can be arranged within the processing chamber, and more specifically, mounted via a boat that can be arranged within the processing chamber. The temperature reference device is advantageously configured such that determining its temperature within a temperature range by means of the measuring device provides information about the actual dominant temperature within the processing chamber. For example, the temperature reference device can be configured such that the temperature profile of the temperature reference device, obtained by substantially continuously determining the temperature for steadily raising the internal temperature within the processing chamber, includes characteristic features associated with a specified temperature.

[0022] For this purpose, the temperature reference device may include, for example, a molten sample arranged on a carrier and having a predetermined melting temperature. In this case, it is advantageous to hold the molten sample on the carrier so that, when the carrier, particularly a carrier held by a boat, is arranged in the processing chamber, the temperature of the molten sample can be determined by means of a measuring device through an opening. Therefore, if the carrier is arranged in the processing chamber, the detection area of ​​the measuring device can be advantageously aligned with the molten sample.

[0023] If the temperature in the processing chamber rises above the melting temperature of the sample, the temperature of the sample remains at the melting temperature due to the enthalpy of fusion until the sample is substantially completely melted. The subsequent temperature plateau in the temperature profile of the sample, determined by means of a measuring device, can be designated as the melting temperature.

[0024] The material of the molten sample can be selected based on the desired calibration temperature. For example, in the case of calibration in the region around 1400°C, it is advantageous for the molten sample to include silicon, and more specifically, to be made of silicon (the melting temperature of silicon is 1410°C). Conversely, in the case of calibration at higher temperatures, such as in the region around 1900°C, it is advantageous for the molten sample to contain ruthenium carbide, and more specifically, to be made of ruthenium carbide (the melting temperature of ruthenium carbide is 1954°C).

[0025] Here, the support is advantageously made of a material with a higher melting temperature than the molten sample. In practice, supports made of graphite have proven advantageous. The chemical and physical stability of graphite makes it possible to avoid contamination of the processing chamber by introducing the support and / or by passing it through the heating chamber. Moreover, graphite can be purified to high purity levels with relatively low cost and complexity. However, in principle, supports made of rhenium carbide, platinum carbide, iridium carbide, or rhodium carbide are also conceivable. Supports made of such materials also possess sufficient chemical and physical stability for use in the processing chambers of high-temperature furnaces.

[0026] In another preferred embodiment, a position reference device is provided that can be arranged within the processing chamber. While the temperature reference device is advantageously used to calibrate the measuring device in terms of measuring the correct temperature, the position reference device can be used to optimally align the detection area of ​​the measuring device within the processing chamber. For example, the position reference device can be used to determine a specific alignment of the detection area. In other words, the position reference device can be provided to achieve a desired arrangement of the measuring device outside the processing chamber in front of an opening, more particularly to achieve a desired positioning and / or alignment of the measuring device relative to the processing chamber. The position reference device can, for example, be used to achieve an arrangement of the measuring device in front of an opening, wherein the detection area of ​​the measuring device is located in a region along the longitudinal axis of the processing chamber, and / or wherein the measuring device detects electromagnetic radiation propagating substantially along the longitudinal axis. Therefore, the position reference device can help avoid the adverse effects of the channel walls of the passage in the insulation device on the measurement results from the measuring device.

[0027] In principle, a temperature reference device can also be used as a position reference device. In a heating chamber, for example, when heated to a temperature below the melting temperature of the sample, the temperature reference device can be heated to a greater extent than the insulation device, and more specifically, to a greater extent than the walls of the channels within the insulation device. In this case, for example, by means of a responsive movement of the measuring device using a positioning device, the detection area of ​​the measuring device can be aligned with the area that, from the measuring device's perspective, is the hottest area in the processing chamber, defined by a portion of the temperature reference device. In this alignment, it can be assumed that the beam path along which the electromagnetic radiation emitted by the temperature reference device propagates to the measuring device extends substantially along the longitudinal axis of the processing chamber. Therefore, the measuring device only "sees" the temperature reference device used as a position reference device.

[0028] However, alternatively or additionally, a (dedicated) position reference device, different from the temperature reference device, may be provided or used to achieve the desired alignment of the detection area of ​​the measuring device. Consequently, optionally, a longitudinal position in the processing chamber, i.e., one or more positions along the longitudinal axis of the processing chamber, may also be referenced, and optionally, said position may be moved at a later point in time for temperature measurement.

[0029] For this purpose, the position reference device includes at least one perforated plate. Preferably, the perforated plate is implemented such that, when arranged in a processing chamber, the temperature of the perforated plate can be determined by means of a measuring device through the opening in a reference area at the edge of the perforation. The perforation can be arranged, for example, in the middle of the perforated plate, such that, when the perforated plate is arranged in the processing chamber, the perforation is substantially located in the region of the longitudinal axis of the processing chamber.

[0030] The advantage of using this perforated plate is that, on the one hand, the temperature of the perforated plate, and therefore the internal temperature of the processing chamber at the longitudinal position of the perforated plate in the processing chamber, can be determined by aligning the detection area of ​​the measuring device with the reference area. On the other hand, in principle, the temperature can also be determined by perforation at the longitudinal position behind the perforated plate.

[0031] Therefore, particularly advantageously with respect to multiple longitudinal positions within a high-efficiency reference processing chamber, is that the position reference device comprises multiple reference plates arranged one after another along the longitudinal axis of the processing chamber. These reference plates are advantageously implemented such that, at least with respect to each other in a predetermined order and / or alignment, the temperature in the reference region of each temperature reference plate can be determined by means of a measuring device through openings. In other words, the multiple reference plates are preferably implemented such that, at least with respect to each other in a predetermined order and / or alignment, at most a portion of each reference plate is concealed by one or more other reference plates. Thus, the reference plates can, for example, be implemented as perforated plates with perforations that coincide when arranged in the processing chamber, more particularly in the region along the longitudinal axis of the processing chamber. With the aid of multiple such reference plates, the temperature in the processing chamber can be determined at different longitudinal positions by means of a measuring device without the need to repeatedly reposition the individual position reference devices for this purpose.

[0032] To enable temperature measurements to be performed specifically at each reference plate, when multiple such plates are arranged along the longitudinal axis of the processing chamber, it is preferable to have position reference devices, and more particularly, each reference plate includes a protrusion. The protrusion advantageously defines a reference area in which the temperature of the position reference device can be detected by means of a measuring device through an opening (e.g., through a protrusion filling a sub-region of the measuring device's field of view) when the position reference device is arranged in the processing chamber. Such a protrusion can, for example, be implemented as a protrusion extending into a perforation in a perforated plate.

[0033] Especially when multiple reference plates are configured as perforated plates, it is advantageous that the perforations are configured as substantially circular perforations with protrusions extending toward the center of the perforation. These protrusions preferably each correspond to a fan-shaped or arcuate segment. Preferably, the protrusions of all reference plates together cover 360°. For example, in the case of three reference plates, the protrusions each extend more than 120°.

[0034] According to a second aspect of the invention, a method for measuring the temperature of a high-temperature furnace for workpiece processing, more particularly semiconductor processing, includes the steps of: i) arranging a measuring device for non-contactly determining the temperature, more particularly the surface temperature, in front of a sealable opening of a heatable processing chamber of the high-temperature furnace for workpiece processing, more particularly semiconductor processing, and more particularly outside the processing chamber; and ii) measuring the temperature inside the processing chamber by means of the measuring device through an optionally sealable opening.

[0035] This method enables in-situ referencing of arbitrary temperature scales. In principle, it can be used over a wide temperature range, particularly including temperatures above 1700°C. This method can be used, for example, to calibrate at least one external temperature measuring device for calibrating a high-temperature furnace.

[0036] In principle, the measuring devices used in this method can be continuously arranged in front of the processing chambers of different high-temperature furnaces. This allows, in principle, comparison of multiple high-temperature furnaces over any desired time period, such as comparing their internal temperatures or temperature uniformity for the same heating power, because the measuring devices are not exposed to the high temperatures in the processing chambers, and therefore there is no associated aging effect compared to thermocouples used in general.

[0037] To ensure that the measuring device specifically determines the temperature within the processing chamber, and more particularly the temperature within the processing volume of the processing chamber, the detection area of ​​the measuring device is preferably aligned before temperature determination. This alignment is advantageously performed by means of a manipulating device. The detection area can be aligned, for example, with a field of view defined by an opening, more particularly by a window in a seal, and / or by a heat insulation device arranged within the processing chamber to insulate the area at the opening of the processing chamber. In particular, the detection area can be aligned with the longitudinal axis of the processing chamber such that electromagnetic radiation emitted by the channel walls of the channel, passing through the heat insulation device, is not detected by the measuring device.

[0038] Such alignment of the measurement area can be achieved, for example, by target manipulation of an optical system that images electromagnetic radiation from the processing chamber, and more particularly from the processing volume, onto the measurement device. For this purpose, in particular, the optical characteristics of the optical system can be selectively altered, for example by moving lenses and / or apertures relative to each other, or by changing the refractive index of the optical elements.

[0039] Alternatively or additionally, the measurement area can also be aligned in a particularly simple, low-cost, and low-complexity manner by correspondingly actuating a positioning device. With the aid of such a positioning device, the measuring device—and therefore its measuring area—is advantageously aligned with respect to at least two degrees of freedom. In particular, the measuring device can thus be positioned with respect to two translational degrees of freedom, for example, by movement in a plane parallel to the opening, and / or aligned with respect to two rotational degrees of freedom, for example, by tilting the measuring device relative to the longitudinal axis of the processing chamber.

[0040] To achieve optimal alignment of the measuring device's detection area (where the temperature in the processing chamber can be reliably determined) by means of a manipulating device, and more particularly by means of a positioning device, a position reference device having a reference area is preferably arranged in the processing chamber. The position reference device is advantageously arranged and / or specifically implemented such that the temperature of the position reference device, at least in its reference area, can be determined by means of the measuring device through an opening. Therefore, advantageously, the position reference device should be arranged such that the electromagnetic radiation it emits can be detected by the measuring device through the opening.

[0041] Preferably, the position reference device is heated by a heating chamber, and the alignment of the detection area of ​​the measuring device is determined as a reference alignment, wherein the measuring device detects the temperature in the reference area. Here, the reference alignment is preferably established by the temperature determined in the alignment satisfying a specified temperature standard. This temperature standard can, for example, be generated by reaching a maximum temperature. Therefore, if the measuring device detects a region with a maximum temperature or at least a temperature higher than the boundary region, a reference alignment is preferably present. In other words, the optimal alignment of the detection area can be found through a "hotspot search" (where "hotspot" actually refers to a region). Here, heating the reference device in the processing chamber ensures that a region with a maximum temperature or a temperature higher than the surrounding environment exists in the processing chamber, and more particularly in the processing volume.

[0042] In principle, this method can also be efficiently used to find multiple reference alignments corresponding to different longitudinal positions within the processing chamber. For this purpose, it is advantageous to arrange multiple reference plates of the position reference device one after another along the longitudinal axis of the processing chamber. This arrangement is advantageous because the temperature of each reference plate, particularly at least in the reference region of the corresponding reference plate, can be detected by means of a measuring device through an opening. A specified temperature distribution can then be generated within the processing chamber, optionally including the corresponding temperature distribution of each reference plate. In this case, the temperature distribution is advantageously specified according to the longitudinal position of the corresponding reference plate within the processing chamber. Therefore, preferably, each temperature distribution is a characteristic of a longitudinal position.

[0043] In this temperature distribution, the temperature advantageously varies along the longitudinal axis. This temperature distribution can be generated, for example, by corresponding heating of the processing chamber (e.g., by selectively supplying power to the heating element).

[0044] In this context, for each reference plate, particularly when generating the temperature distribution assigned to its longitudinal position, a reference alignment of the detection area of ​​the measuring device can be determined, which is associated with its longitudinal position in the processing chamber. Here, each reference alignment is preferably established by the temperature determined in this alignment (with the corresponding temperature distribution in the processing chamber) satisfying a specified temperature criterion.

[0045] When generating corresponding temperature distributions for each reference plate, preferably, for each specified temperature distribution, the corresponding reference plate is arranged in the region of highest temperature within the processing chamber. In other words, each generated temperature distribution has a maximum temperature at a longitudinal position within the processing chamber, where a reference plate is also arranged. Therefore, it is advantageous to heat the processing chamber for each reference plate such that a maximum temperature is formed in the region of the corresponding reference plate. Thus, it is advantageous to meet temperature standards by achieving the maximum temperature.

[0046] Otherwise, if only one temperature distribution is generated, then by reaching the maximum temperature, the temperature criterion is beneficially satisfied only for one reference plate. Other reference plates may follow different temperature criteria—for example, a specified fraction of the maximum temperature.

[0047] By using this defined reference alignment, the temperature uniformity within the processing chamber can be tested. To this end, the processing chamber is advantageously heated to maximum uniformity, and the temperature reached by the reference plate is determined within the reference region. By assigning this determined temperature to the position of the reference plate within the processing chamber, a temperature distribution along the longitudinal axis is obtained.

[0048] In some cases, determining the reference alignment can be omitted in order to determine this temperature distribution. For this purpose, it is advantageous to arrange multiple reference plates of the position reference device along the longitudinal axis in a specified orientation relative to each other. As a result of the specified orientation, the position of the reference area in a "temperature image" taken by means of a measuring device is known. After heating the position reference device through the heat treatment chamber, this image can be obtained by determining the solid angle resolution of the temperature within the treatment chamber using a measuring device.

[0049] In solid angle-resolved temperature determination, it is advantageous to obtain multiple temperature measurements at different solid angles. This can be achieved, for example, by manipulating the measuring device and / or its detection area with different solid angles. In this way, at least a portion of the possible field of view of the measuring device can be "rasterized". Thus, from the perspective of the measuring device, the temperature measurements obtained by solid angle-resolved temperature determination form a two-dimensional temperature distribution.

[0050] Alternatively, solid angle-resolved temperature determination (i.e., taking “temperature pictures”) can be performed by means of a sensor array (e.g., an (infrared) camera) of a correspondingly implemented measuring device.

[0051] The temperature measurements determined from the solid angle-resolved temperature can then be directly assigned to the reference area of ​​the reference plates, since, in fact, the positions of the reference plates in the "picture" are known due to their specified orientation relative to each other. The temperature distribution along the vertical axis can then be derived accordingly from the positions of the reference plates along the vertical axis.

[0052] To enable the calibration of the measuring equipment as an alternative or supplement to optimal alignment, a temperature reference device is preferably arranged in the processing chamber, more particularly by means of a boat. The temperature reference device is then advantageously heated by the heating chamber, and its temperature profile is detected by means of a measuring device, more particularly by detecting the temperature profile of the molten sample. The melting temperature of the temperature reference device, more particularly the melting temperature of the molten sample, can then be designated as the temperature of the temperature profile.

[0053] For example, a stable temperature segment in the temperature profile can be identified, controlled by the enthalpy of melting of a temperature reference device, and more specifically by the enthalpy of melting of the molten sample, and this stable temperature segment indicates the point at which melting is achieved. Therefore, the melting temperature can be assigned to the stable temperature segment.

[0054] Alternatively, the measuring device can also be calibrated using conventional temperature sensors (e.g., thermocouples). For this purpose, at least one external temperature measuring device, i.e., a device located outside the processing chamber, is calibrated by determining the temperature inside the processing chamber using a temperature sensor that is at least proportionally inserted into the processing chamber, and assigning this temperature to measurement data generated when the external temperature of the processing chamber is simultaneously measured using at least one temperature measuring device. Subsequently, the temperature sensor is advantageously removed from the processing chamber, and the measuring device is positioned in front of the opening of the processing chamber. The measuring device can now be calibrated by determining the external temperature of the processing chamber using at least one now-calibrated temperature measuring device and simultaneously measuring the temperature inside the processing chamber non-contactly using the measuring device. The advantage of calibrating the measuring device in this way is that temperature-sensitive processing methods already established in existing high-temperature furnaces can be directly reproduced by the measuring device.

[0055] Advantageously, the measuring equipment's detection area is aligned using a position reference device before calibration. In this case, the measuring equipment can also be calibrated by measuring the temperature of one or more reference plates (which are then arranged at different longitudinal positions within the processing chamber) using the measuring equipment, and simultaneously using at least one temperature measuring device to determine the external temperature of the processing chamber at the corresponding longitudinal position.

[0056] The measurement method described above according to the second aspect of the invention can be used particularly for calibrating at least one external temperature measuring device for a high-temperature furnace used for workpiece processing, and more particularly for semiconductor processing.

[0057] Therefore, a third aspect of the invention relates to a calibration method for at least one temperature measuring device of a high-temperature furnace for workpiece processing, more particularly semiconductor processing, comprising the steps of: i) non-contactly determining the temperature inside the high-temperature furnace for workpiece processing, more particularly semiconductor processing, by means of a measuring device arranged in front of a sealable, more particularly sealed opening of the processing chamber; and ii) calibrating at least one temperature measuring device arranged outside the processing chamber and configured to determine the external temperature of the processing chamber based on the non-contactly determined temperature, more particularly determining the surface temperature in a region on the outer surface of the processing chamber.

[0058] For example, in one step, measurement data from at least one temperature measuring device disposed outside the processing chamber can be received. This measurement data advantageously characterizes the external temperature of the processing chamber, which is preferably, but not necessarily, measured non-contactly. In subsequent steps, the non-contactly determined temperature inside the processing chamber can be assigned to these external measurement data.

[0059] Therefore, the temperature inside the processing chamber can be accurately derived from the measurement data, specifically from the external temperature of the processing chamber determined by means of at least one temperature measuring device. This method can be reliably used even at temperatures above 1700°C because, unlike conventionally used thermocouples, the measuring device has no associated temperature limitations within this temperature range. Attached Figure Description

[0060] The invention is now described in more detail with reference to the accompanying drawings. Where advantageous, elements having the same effect have the same reference numerals. The invention is not limited to the exemplary embodiments shown in the drawings, nor is it limited in terms of functional features. The description to date and the following description of the drawings contain numerous features, some of which are commonly reproduced multiple times in the dependent claims. However, these features, as well as all other features disclosed in the above and following description of the drawings, will also be considered individually by those skilled in the art and combined to form reasonable additional combinations. In particular, all the described features (individually and in any desired suitable combination in each case) can be combined with a system according to the first aspect of the invention, a method according to the second aspect of the invention, and a calibration method according to the third aspect of the invention.

[0061] The accompanying drawings schematically illustrate at least part of the following: Figure 1 An example of a system for determining temperature in the processing chamber of a high-temperature furnace used for workpiece processing is shown; Figure 2 An example of a temperature reference device is shown; Figure 3A An example of a curve for determining the temperature of a molten sample is shown; Figure 3B An example of an inverse curve of the temperature of the melt sample is shown; Figure 4 An example is shown, which includes a grating whose temperature is determined by means of a measuring device; Figure 5 An example of a position reference device is shown; Figure 6 An example of multiple reference panels arranged in a processing chamber is shown; and Figure 7 An example of a method for determining temperature in the processing chamber of a high-temperature furnace used for workpiece processing is shown. Detailed Implementation

[0062] Figure 1 An example of a system 1 for determining temperature in a processing chamber 2 of a high-temperature furnace 50—specifically, a vertical shaft furnace in this invention—for workpiece processing, and more particularly for semiconductor processing, is shown. A measuring device 4 is thus provided, arranged in front of a sealable opening 3 of the processing chamber 2, and movable relative to the processing chamber 2 by means of an actuating device 5, specifically implemented as a positioning device 6, and configured to determine the temperature in the processing chamber 2 non-contactly through the opening 3, which is sealed by means of a seal 15 having a window made, for example, of sapphire or quartz. The seal 15 forms the base of the processing chamber 2, which is vertically aligned relative to its longitudinal axis L. The positioning device 6 can be actuated by a control device 20. The processing chamber 2 can be heated by means of a heating device (e.g., a plurality of heating elements 7). The external temperature of the processing chamber 2 resulting from such heating can be determined by means of an (external) temperature measuring device 8.

[0063] In this example, system 1 includes a temperature reference device 10, which can be arranged in processing chamber 2, more specifically in processing volume 9 (indicated by points), and which can be used to calibrate measuring device 4—as will be combined later below. Figure 2 As described more fully in Figure 3. The processing volume 9 is defined on the base or seal side by a heat insulation device 11, which illustratively includes a so-called "baffle" 12 and a plurality of graphite plates 13 stacked flat on top of each other. To provide access to the processing volume 9 via an opening 3, and more particularly via a window in the seal 15, the graphite plates 13 are perforated in the middle. Furthermore, the baffle 12 includes a baffle channel that coincides with the perforation of the graphite plates 13 when arranged in the processing chamber 2. The baffle channel and the perforation thus form a channel 14 in the heat insulation device 11, through which the temperature in the processing volume 9 (e.g., the temperature of the temperature reference device 10) can be determined by means of a measuring device 4. The channel 14 advantageously extends along the longitudinal axis L of the processing chamber 2, and more particularly concentrically with it. The channel 14 is defined on the base or seal side by a window and opens at the other end to the processing volume 9.

[0064] The measuring device 4 can be specifically implemented as a pyrometer or other radiation measuring instrument, and optionally also designed as an (infrared) camera. The measuring device advantageously includes at least one sensor or sensor array, which can be used, for example, to detect electromagnetic radiation in the infrared region. This radiation originating from the heated object is a characteristic of the object's temperature.

[0065] In order for the measuring device 4 to reliably detect the temperature of the temperature reference device 10, it is desirable that the detection area 16 of the measuring device 4 be aligned with the temperature reference device 10. In particular, this alignment of the detection area 16 can prevent the determined temperature from being distorted due to the influence of the wall 17 of the channel 14 in the insulation device 11. For example, this alignment can prevent electromagnetic radiation emitted by the wall 17 of the channel 14 from being detected by the measuring device 4.

[0066] The alignment of the detection area 16 can be performed using the positioning device 6. For example, corresponding (translational) positioning and / or corresponding (rotational) alignment of the measuring device 4 can be performed. This is described in conjunction with the following. Figure 4 To elaborate more comprehensively.

[0067] Similar to measuring device 4, temperature measuring device 8 is preferably also configured for non-contact—e.g., radiation-based—determination of external temperature, more particularly the surface temperature outside the processing chamber 2. As shown by the dashed lines, temperature measuring device 8 can, for example, detect electromagnetic radiation emitted from the outer surface of the processing chamber 2 and propagating between the heating elements 7. A heat insulation layer is provided around the processing chamber 2. Figure 1 Unless otherwise indicated, this layer advantageously has openings to allow radiation to pass through. However, in principle, different embodiments of the temperature measuring device 8 are also conceivable. For example, the temperature measuring device 8 can alternatively be implemented as a thermocouple.

[0068] Figure 2 An example of a temperature reference device 10 is shown. The temperature reference device 10 includes a carrier 18 and a molten sample 19 disposed thereon. The carrier 18 is configured for placement, for example by means of a so-called "boat," in the processing chamber of a high-temperature furnace. For this purpose, the carrier 18 may have a plate-like embodiment, and more particularly a typical wafer form.

[0069] The molten sample 19 is advantageously made of a material having a lower melting temperature than the carrier material. As a result, the molten sample 19 can be selectively induced to melt (e.g., via a heat treatment chamber), as shown in Figure 3.

[0070] Figure 3A An example of curve 21 is shown, depicting the temperature T of a molten sample located where the temperature is raised above the sample's melting temperature T. S In an environment with a specific temperature. Over a period of time t, for example, as the ambient temperature rises above the melting temperature T. S Within a few 100 ms after the level, the temperature T of the molten sample rises to the melting temperature T. S The temperature T of the molten sample is maintained there until the sample melts. In other words, curve 21, especially due to the enthalpy of fusion of the molten sample, is at the melting temperature T. SA temperature plateau is formed at point 22. Only after melting does the temperature T of the molten sample (now liquid) rise further.

[0071] Figure 3B The reverse curve is shown, specifically an example of curve 21 for the temperature T of the molten sample, where the temperature ranges from above the melting temperature T of the molten sample. S The temperature is lowered to below the melting temperature T. S In an environment with a specific temperature. Under these conditions, a temperature plateau 22 is formed until the molten sample completely solidifies.

[0072] Therefore, the internal temperature of the processing chamber 2 has been raised to the melting temperature T of the temperature reference device 10. S The above temperatures or temperatures that have already decreased to the melting temperature T S Immediately after the following temperatures, determine this temperature profile 21 for calibration. Figure 1 The measuring device 4 is shown. For this purpose, the control device 20 is preferably configured to identify a temperature plateau 22 in the measurement data of the measuring device 4, which is generated when the temperature curve 21 is recorded. The control device 20 can then use the previously known melting temperature T of the temperature reference device 10, and more particularly, the molten sample. S The measurement data is assigned to the temperature corresponding to the relevant plateau temperature range.

[0073] The calibrated measuring device 4 can be used for particularly precise calibration. Figure 1 The temperature measuring device 8 is shown. For this purpose, the control device 20 is preferably configured to use a calibrated measuring device 4 to detect the temperature in the heated processing chamber 2 and assign it to the temperature measuring device 8 as measurement data that actually characterizes the external temperature of the processing chamber 2. In normal operation of the high-temperature furnace 50, the internal temperature of the processing chamber 2 can then be reliably derived from the measurement data of the temperature measuring device 8.

[0074] Figure 4 An example of a grating 23 is shown, consisting of a temperature T (indicated as a shaded or white area) determined non-contactly through an opening in the processing chamber by means of a measuring device. The grating 23 is generated by the movement (e.g., translation and / or rotation) of the measuring device in two degrees of freedom, x and y. The movement of the measuring device also causes a change in the position of a detection area 16 (indicated as a circle) of the measuring device, to which the determined temperature T is assigned. Therefore, the grating 23 shows a spatial temperature profile as viewed from the measuring device.

[0075] In the example shown, the shaded area indicates a temperature T lower than the white area indicates a temperature T. Figure 1When the alignment of the detection area 16 of the measuring device 4 changes, these lower temperatures T can be assigned to, for example, the temperature of the wall 17 of the channel 14 in the insulation device 11. The higher temperature T at the center of the grating 23 can conversely be assigned to the temperature reference device 10 arranged in the processing volume 9.

[0076] Because the arrangement of the measuring device 4 relative to the processing chamber 2 varies with respect to at least two degrees of freedom (x, y) (e.g., two translational degrees of freedom (movement in a plane parallel to the opening 3) and two rotational degrees of freedom (inclination relative to the longitudinal axis L)), the alignment of the detection area 16 can be identified accordingly, in which the temperature T of the processing chamber 2 or the measuring target (e.g., the temperature reference device 10) arranged therein can be reliably determined, unaffected by the wall 17 of the channel 14.

[0077] As Figure 1 The temperature reference device 10 shown can be used as an alternative or supplement to find the "optimal" alignment of the detection area 16 by means of different measurement targets (such as dedicated position reference devices).

[0078] Moreover, it is also conceivable that instead of "rasterization" of the volume in the processing chamber 2 accessible through the opening 3, "images" could be captured by means of a sensor array (e.g., an infrared camera) of the correspondingly implemented measuring device 4, through the movement of the measuring device 4.

[0079] Figure 5 A position reference device 24, specifically implemented as a perforated plate 25, is shown. The position reference device 24 includes a protrusion 26 that defines a reference region 27, drawn in dashed lines. The protrusion 26 extends into the perforation 28, and more particularly toward its center. Thus, the reference region 27 is located in the region at the edge 29 of the perforation 28.

[0080] Therefore, in Figure 1 When the position reference device 24 is arranged in the processing chamber 2, it is specifically used to replace the temperature reference device 10 shown in the figure, and can be combined with Figure 4 The described method discovers the alignment of the detection area 16 of the measuring device 4 with the reference area 27.

[0081] Furthermore, as shown in the figure, the embodiment of the position reference device 24 as the perforated plate 25 also allows the temperature of an object arranged behind the position reference device 24 in the processing chamber 2 to be determined by the corresponding alignment of the detection area 16. This can be used to study the temperature uniformity in the processing chamber 2, such as in conjunction with... Figure 6 To elaborate in more detail.

[0082] Figure 6Examples of multiple-three (illustrative only) reference plates 30 of the position reference device 24 are shown. The reference plates 30 are arranged, for example by means of a boat 31, at different longitudinal positions P1, P2 and P3 in the processing chamber 2 of the high-temperature furnace relative to the longitudinal axis L of the processing chamber 2; only a portion of the boat is shown.

[0083] Each reference plate 30 is specifically implemented as a perforated plate having a protrusion 26 pointing towards the center of the perforations. Apart from the inwardly protruding protrusion 26, the perforations 28 of the perforated plate have a substantially circular shape. In the arrangement within the processing chamber 2, the perforations 28 are arranged along the longitudinal axis L.

[0084] Reference plates 30 are arranged one after another along the longitudinal axis L, and more specifically, oriented relative to each other, so that the temperature of each reference plate 30 can be determined by means of a measuring device through an opening in the base of the processing chamber (compare). Figure 1 Specifically, the reference plates 30 are arranged, and more particularly, oriented relative to each other, such that electromagnetic radiation emitted from the protrusions 26 can propagate substantially along the longitudinal axis L through the openings to reach the measuring device. Thus, the reference plates 30 are advantageously arranged, and more particularly, oriented relative to each other, such that when viewed along the longitudinal axis L, no protrusion 26 is hidden by another protrusion 26 or by itself behind a protrusion 26.

[0085] For example, as in Figure 5 As seen in the diagram, the protrusions 26 can be in the form of a fan. All the protrusions 26 together advantageously cover 360°. However, in principle, other forms of protrusions 26, such as arc segments, are also conceivable.

[0086] Because the detection area of ​​the measuring device is defined by the corresponding protrusion 26 or thus the reference area (comparison) Figure 5 When aligned, the temperature of one of the reference plates 30 arranged at each longitudinal position P1, P2 and P3 can be determined in a targeted manner, and thus the temperature distribution along the longitudinal axis L in the processing chamber 2 can also be determined.

[0087] In order to specifically determine the temperature at longitudinal positions P1, P2, and P3, it is advisable to predetermine a reference alignment for the detection area corresponding to the position of the protrusion 26. By "moving" to such a reference alignment, that is, by aligning the detection area to such a reference alignment, the temperature of the associated reference plate 30 can then be determined.

[0088] Reference alignment can be determined by creating different temperature distributions in processing chamber 2, for example, by targeted actuation by control device 20. Figure 1 The heating element 7 is shown. In the resulting temperature distributions, advantageously, a maximum temperature exists in a region of a reference plate 30. Figure 6In the case of the three reference plates 30 shown, for example, a temperature distribution can be generated at the longitudinal position P1 (e.g., at the lower end of the processing chamber 2 or at least in...). Figure 1 The temperature distribution has a maximum value at the lower end of the processing volume 9 shown; a maximum value at position P2 (e.g., in the middle of the processing chamber 2 or at least in the middle of the processing volume 9); and a maximum value at the longitudinal position P3 (e.g., at the upper end of the processing chamber 2). As a result, one protrusion 26 is advantageously heated to a greater extent than the other protrusions 26.

[0089] For each of these temperature distributions generated, then the above-combined... Figure 4 The described method determines the position of the protrusion 26 that is heated to the maximum extent. Correspondingly, the alignment of the detection area whose determined temperature meets a predetermined temperature standard—for example, reaching the maximum temperature—can be identified as the reference alignment of the corresponding protrusion 26.

[0090] When the alignment of the reference plate 30, and more particularly the protrusion 26, in the processing chamber 2 is specified or known, the temperature distribution along the longitudinal axis L can also be determined without explicitly identifying the reference alignment, thereby shortening the process. For this purpose, the temperature in the processing chamber is advantageously determined with solid angle resolution, for example, by combining... Figure 4 The grating method was determined. In the obtained image (i.e., the two-dimensional temperature distribution (see...) Figure 4 In the grating, the determined temperature can then be assigned to a specified or known protrusion 26 based on the position of the temperature in the image.

[0091] In some cases, this can also be achieved by using a position reference device 24 with multiple reference plates 30. Figure 1 The temperature measuring device 8 shown is calibrated with exceptional precision. For this purpose, the reference plate 30 is advantageously arranged at the same height within the processing chamber 2 along with the corresponding temperature measuring device 8. By generating corresponding temperature distributions with maximum temperature values ​​at longitudinal positions P1, P2, P3 of the corresponding one in the reference plate 30, the maximum temperature—determined by means of the measuring device 4 and corresponding to the temperature of the reference plate 30 closest to the maximum temperature value—can then be assigned to the measured value of the temperature measuring device 8 corresponding to it (i.e., located at the same height). Therefore, each temperature measuring device 8 can be calibrated separately, thereby allowing for special consideration of temperature non-uniformity within the processing chamber 2.

[0092] However, in this case, it is also conceivable to shorten the method and utilize a specified or known alignment of the reference plate 30 so that the calibration of the temperature measuring device 8 can be performed in only one "measurement pass" (i.e., using only a single temperature distribution in the processing chamber 2). Here, the calibration is based on the position of the measured value in the two-dimensional grating (see...). Figure 4The temperature measurement values ​​obtained when the solid angle of the temperature in the processing chamber 2 is determined are advantageously assigned to the corresponding reference plate 30 and its corresponding temperature measuring device 8.

[0093] Apart from Figure 6 In addition to the three reference plates 30 shown, an alternative possibility is to arrange additional perforated plates without protrusions 26 in the processing chamber 2 to increase the heat load. The temperature of these additional perforated plates is advantageously not detectable by measuring equipment.

[0094] Figure 7 An example of a method 100 for determining temperature in a processing chamber of a high-temperature furnace used for workpiece processing, more particularly for semiconductor processing, is shown.

[0095] In method step S1, a temperature reference device is arranged, for example by means of a boat, through an opening in the processing chamber. Then, the processing chamber is advantageously sealed using a processing chamber seal, in which a window is formed.

[0096] In another method step S2, a measuring device is arranged outside the processing chamber for non-contact determination of the temperature in front of (sealed) the opening, more particularly in front of the window. Here, the measuring device is advantageously arranged so that the temperature inside the processing chamber, more particularly the temperature of the temperature reference device, can be determined non-contactly using the measuring device. Additionally, in method step S2, the processing chamber can be heated. Here, it is preferable to raise the temperature inside the processing chamber to a temperature lower than the melting temperature of the molten sample of the temperature reference device.

[0097] In another method step S3, the temperature inside the processing chamber is determined by means of a measuring device through the opening of the processing chamber, and more particularly, the temperature of the temperature reference device is determined.

[0098] The additional method step S4 preferably includes testing whether a stopping criterion is met. If not, in method step S5, the alignment of the detection area of ​​the measuring device is changed by means of a manipulating device. For example, the arrangement of the measuring device relative to the processing chamber can be changed by means of a positioning device, such as by translating the measuring device in a plane parallel to the opening and / or tilting the measuring device relative to the longitudinal axis of the processing chamber. Subsequently, method step S3 is performed again—that is, the temperature is determined again.

[0099] Conversely, if a stopping criterion is met, the method continues to step S6. For example, if the alignment of the detection area or the arrangement of the measuring device relative to the processing chamber has been or can be determined based on multiple determined temperatures, a stopping criterion can be met if a specified temperature criterion is met within the processing chamber. It is advantageous to meet the temperature criterion if a maximum temperature is determined or at least one area with a temperature higher than the boundary area is identified.

[0100] The alignment of the detection area or the corresponding arrangement of the measuring equipment relative to the processing chamber can be stored as a reference alignment.

[0101] In method step S6, the temperature in the processing chamber is preferably raised to a temperature above the melting point of the molten sample. Simultaneously or at least immediately thereafter, a measuring device determines a temperature profile of the molten sample. In another method step S7, a plateau temperature can then be determined from the temperature distribution, and the melting temperature of the molten sample is assigned to that temperature.

[0102] The calibrated measuring device can be used to perform calibration method 200 on at least one temperature measuring device arranged outside the processing chamber for measuring the external temperature of the processing chamber. For this purpose, it is advantageous to first remove the molten sample from the processing chamber and replace it with another measuring target (e.g., a position reference device). Subsequently, the processing chamber can be reheated, and the temperature within the processing chamber can be determined using the calibrated measuring device. Simultaneously, preferably, the external temperature of the processing chamber, such as the surface temperature, is detected using an external temperature measuring device. For calibration, the temperature determined using the calibrated measuring device is assigned to the synchronously acquired measurement data of the temperature measuring device.

[0103] After the temperature reference device has been replaced by the position reference device, steps S3 to S5 can optionally be performed again to calibrate multiple external temperature measuring devices arranged at different locations along the processing chamber. Therefore, optionally, multiple reference alignments corresponding to the detection area or measuring device at different longitudinal positions can be determined. As a result, not only can the temperature uniformity in the processing chamber be tested, but optionally, multiple temperature measuring devices can be calibrated individually.

[0104] List of reference numerals 1 System 2 Processing Room 3 Openings 4. Measuring equipment 5. Operating the equipment 6. Positioning equipment 7 Heating element 8 Temperature measuring device 9. Processing volume 10 Temperature Reference Device 11. Insulation device 12 baffles 13 Graphite Plates 14 channels 15. Seals 16 Detection Areas 17 walls 18 carriers 19 Melt Samples 20 Control equipment 21 Temperature curve 22. Temperature stability range 23. Grating 24 Position Reference Device 25 Perforated Plate 26 protrusions 27 Reference Area 28 piercings 29 Edge 30 Reference Board 31 boats 50 high temperature furnace 100 methods 200 Calibration Method S1 A temperature reference device is arranged in the processing chamber. S2. Measuring equipment is arranged in front of the opening. Temperature in the S3 detection and processing chamber Does the S4 test meet the stopping criteria? S5 Change the alignment of the detection area S6 Increase the temperature and determine the melting temperature profile. S7 Determine the steady-state temperature L (vertical axis) P1 Vertical position P2 Vertical position P3 Vertical position T temperature x and y degrees of freedom t time T S melting temperature

Claims

1. A system (1) for determining temperature in a processing chamber (2) of a high-temperature furnace (50) for workpiece processing, more particularly for semiconductor processing, having a heatable processing chamber (2) including an opening (3). Its features are, A measuring device (4), which is arranged in front of the opening, is used to determine the temperature (T) inside the processing chamber (2) non-contactly through the opening (3).

2. The system (1) according to claim 1, Its features are, Manipulation device (5) is used to align the detection area (16) of the measuring device (4).

3. The system (1) according to claim 2. Its features are, The manipulation device (5) includes a positioning device (6) for moving the measuring device (4) relative to the processing chamber (2).

4. The system (1) according to claim 3. Its features are, The positioning device (6) for moving the measuring device (4) is configured to have at least two degrees of freedom (x, y).

5. The system (1) according to any one of the preceding claims. Its features are, - At least one temperature measuring device (8) arranged outside the processing chamber (2) for determining the external temperature of the processing chamber (2); and - Control device (20) configured to calibrate the at least one temperature measuring device (8) based on the temperature (T) inside the processing chamber (2) determined by means of the measuring device (4).

6. The system (1) according to any one of the preceding claims. Its features are, At least one temperature reference device (10) is provided, which can be arranged in the processing chamber (2) for calibrating the measuring device (4).

7. The system (1) according to claim 6. Its features are, The temperature reference device (10) includes a molten sample (19), which is held by a carrier (18) and has a predetermined melting temperature (T). S ).

8. The system (1) according to claim 7. Its features are, The molten sample (19) comprises silicon or ruthenium carbide, and / or the carrier (18) is made of graphite, rhenium carbide, platinum carbide, iridium carbide or rhodium carbide.

9. The system (1) according to any one of the preceding claims. Its features are, A position reference device (24) is arranged in the processing chamber (2) for aligning the detection area (16) of the measuring device (4) within the processing chamber (2).

10. The system (1) according to claim 9. Its features are, The position reference device (24) includes at least one perforated plate (25), which is specifically implemented such that when arranged in the processing chamber (2), the temperature (T) of the perforated plate (25) can be determined by means of the measuring device (4) through the opening (3) in a reference area (27) at the edge (29) of the perforation (28).

11. The system (1) according to any one of claims 9 and 10. Its features are, The position reference device (24) includes a plurality of position reference plates (30) which can be arranged one after another along the longitudinal axis (L) of the processing chamber (2) and are specifically implemented such that, at least with the reference plates (30) arranged in the processing chamber (2) in a predetermined order and / or aligned with each other, the temperature (T) can be determined by means of the measuring device (4) through the opening (3) in the reference area (27) of each reference plate (30).

12. The system (1) according to any one of claims 9 to 11. Its features are, The position reference device (24) has a protrusion (26) defining a reference area (27) in which the temperature (T) of the position reference device (24) can be detected by means of the measuring device (4) through the opening (3) when the position reference device (24) is arranged in the processing chamber (2).

13. A method (100) for determining temperature in a processing chamber (2) of a high-temperature furnace (50) for workpiece processing, more particularly for semiconductor processing, comprising: - A measuring device (4) for non-contactly determining temperature (T) is arranged (S2) in front of the opening (3) of the heatable processing chamber (2) of the high-temperature furnace (50) used for workpiece processing, and more particularly for semiconductor processing; and - The temperature (T) inside the processing chamber (2) is measured (S3) through the opening (3) by means of the measuring device (4).

14. The method (100) according to claim 13. Its features are, Before the temperature (T) is determined, the detection area (16) of the measuring device (4) is aligned with the field of view defined by the opening (3) and / or the heat insulation device (11) arranged in the processing chamber (2) for insulating the area at the opening (3) by means of the manipulation device (5) (S5).

15. The method (100) according to any one of claims 13 and 14. Its features are, The measuring device (4) is aligned with respect to the processing chamber (2) with respect to at least two degrees of freedom (x, y) by means of the positioning device (6).

16. The method (100) according to any one of claims 13 to 15. Its features are, - A position reference device (24) having a reference area (27) is arranged in the processing chamber (2), - The position reference device (24) is heated by heating the processing chamber (2), and - The alignment of the detection area (16) of the measuring device (4) is identified as a reference alignment, wherein if the temperature (T) determined in the alignment meets the specified temperature standard, the measuring device (4) detects the temperature (T) in the reference area (27).

17. The method according to any one of claims 13 to 16, Its features are, - Multiple reference plates (30) of the position reference device (24) are arranged one after another along the longitudinal axis (L) of the processing chamber (2); - To generate a specified temperature distribution in the processing chamber (2); and - For each of the reference plates (30), a reference alignment of the detection area (16) of the measuring device (4) is determined, the alignment being associated with their longitudinal positions (P1, P2, P3) in the processing chamber (2), wherein the temperature (T) determined by means of the measuring device (4) in the reference alignment meets a specified temperature standard.

18. The method according to any one of claims 13 to 17, Its features are, - Multiple reference plates (30), each having a reference area (27) of a position reference device (24), are arranged one after another along the longitudinal axis (L) of the processing chamber (2) in a specified orientation relative to each other. - The position reference device (24) is heated by heating the processing chamber (2). - The temperature in the processing chamber (2) is determined with solid angle resolution using the measuring device (4), so that multiple temperature measurements are determined at different solid angles. - The temperature distribution along the longitudinal axis (L) of the processing chamber (2) is determined based on the reference area (27) of the reference plate (30) by assigning the temperature measurement values ​​to the reference area (27).

19. The method (100) according to any one of claims 13 to 18. Its features are, - A temperature reference device (10) for calibrating the measuring device (4) is arranged (S1) in the processing chamber (2). - The temperature reference device (10) is heated by heating the processing chamber (2), and the temperature (T) curve (21) of the temperature reference device (10) is detected (S6) by means of the measuring device (4), and - The melting temperature (T) of the temperature reference device (10) S ) Distribute (S7) to the temperature (T) from the temperature curve (21).

20. The method (100) according to any one of claims 13 to 18. Its features are, - The temperature inside the processing chamber (2) is determined by means of a temperature sensor that is at least proportionally inserted into the processing chamber (2), and this temperature is assigned to measurement data generated when the external temperature of the processing chamber (2) is simultaneously measured by means of the at least one temperature measuring device (8), thereby calibrating at least one temperature measuring device (8) arranged outside the processing chamber (2), and - The measuring device (4) is calibrated by measuring the external temperature of the processing chamber (2) by means of the at least one calibrated temperature measuring device (8) and assigning it to the measurement data generated when the temperature in the processing chamber (2) is measured non-contactly by means of the measuring device (4).

21. A calibration method (200) for at least one temperature measuring device (8) of a high-temperature furnace (50) for workpiece processing, more particularly for semiconductor processing, comprising: - The temperature (T) inside the processing chamber (2) is determined non-contactly through the opening (3) of the processing chamber (2) of the high-temperature furnace (50) for processing the workpiece by means of a measuring device (4) arranged in front of the opening (3). as well as - Calibrate at least one temperature measuring device (8), which is arranged outside the processing chamber (2) and configured to determine the external temperature of the processing chamber (2) based on the temperature (T) determined by the non-contact method.

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