Surface acoustic wave device using local convex piezoelectric film structure, filter and preparation method thereof

By setting convex structures and bridge-shaped electrode layers on piezoelectric films, the energy distribution of surface acoustic waves can be modulated, solving the problem of transverse mode excitation and improving the performance of surface acoustic wave devices, especially in terms of high frequency and low loss.

CN122247374APending Publication Date: 2026-06-19HEFEI XINTOU MICROELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HEFEI XINTOU MICROELECTRONICS CO LTD
Filing Date
2026-03-02
Publication Date
2026-06-19

AI Technical Summary

⚠Technical Problem

Existing surface acoustic wave devices based on piezoelectric thin films and composite film substrates suffer from severe transverse mode excitation, leading to increased insertion loss and intensified in-band ripple, making it difficult to meet the performance requirements of the mobile communication industry for high frequency, high selectivity, and low loss.

⚗Method used

A locally convex piezoelectric thin film structure is adopted. By setting a convex piezoelectric thin film structure and an interdigitated electrode layer on the piezoelectric thin film, a bridge-shaped structure is formed, which can regulate the velocity and energy distribution of surface acoustic waves and suppress the excitation of transverse miscellaneous modes.

🎯Benefits of technology

It significantly improves the passband performance of the device, enhances the overall performance of the device, reduces the excitation of lateral miscellaneous modes, improves the selectivity of the device, and reduces losses.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention discloses a surface acoustic wave (SAW) device, filter, and fabrication method using a locally convex piezoelectric thin film structure, relating to the field of integrated circuit technology. The device includes an interdigitated electrode layer and a piezoelectric thin film. A convex piezoelectric thin film structure is disposed above the piezoelectric thin film along the propagation direction of the SAW. The interdigitated electrode layer is disposed above the piezoelectric thin film and forms a bridge-like structure with the convex piezoelectric thin film structure. The convex piezoelectric thin film structure is fabricated using a pulsed laser deposition process, or by an etching process. This device significantly suppresses the excitation of lateral heterogeneous modes, thereby improving the passband performance of the device.
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