Infrared circularly polarized light detector, preparation method thereof and infrared circularly polarized light detection method

By employing a symmetry-mismatched heterojunction structure in an infrared circular polarization detector and utilizing semiconductor materials with different crystal symmetries to form a van der Waals heterojunction, efficient differentiation and detection of infrared circularly polarized light at room temperature is achieved. This solves the problems of low-temperature operation and complex structure in existing technologies, and improves detection accuracy and sensitivity.

CN122248810BActive Publication Date: 2026-07-24HANGZHOU INST FOR ADVANCED STUDY UCAS
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HANGZHOU INST FOR ADVANCED STUDY UCAS
Filing Date
2026-05-25
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing infrared circular polarization detectors need to operate in low-temperature environments, relying on the heterogeneous integration of chiral metamaterials or metal gratings with quantum well materials. This results in a large system size and high power consumption, which cannot meet the requirements for portable applications at room temperature. Furthermore, the structure is complex and the fabrication process is difficult.

Method used

A van der Waals heterojunction is formed by stacking a substrate layer, a first semiconductor layer, and a second semiconductor layer. By precisely aligning the in-plane lattice principal axes of two semiconductor materials with different crystal symmetries, a symmetry-mismatched heterojunction is formed, enabling direct electrical readout of infrared circularly polarized light without the need for complex chiral metamaterials or metal grating structures.

Benefits of technology

Direct electrical readout of the chirality of infrared circularly polarized light at room temperature simplifies the structure, reduces detection conditions and costs, improves detection efficiency and accuracy, and avoids the use of cryogenic cooling devices.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122248810B_ABST
    Figure CN122248810B_ABST
Patent Text Reader

Abstract

The present application relates to the technical field of infrared circular polarization detection, and discloses an infrared circular polarization detector, a preparation method thereof, and an infrared circular polarization light detection method.The infrared circular polarization detector comprises a substrate layer, a first semiconductor layer, a second semiconductor layer and an electrode which are arranged in layers; the first semiconductor layer and the second semiconductor layer are at least partially laminated to form a van der Waals heterojunction; the crystal symmetry of the first semiconductor layer is different from that of the second semiconductor layer; the angle between the first in-plane lattice principal axis of the first semiconductor layer and the second in-plane lattice principal axis of the second semiconductor layer is 0°, so as to form a symmetry mismatch heterointerface at the interface of the van der Waals heterojunction; and the infrared circular polarization detector is suitable for producing different photoelectric current responses under the irradiation of left-handed infrared circular polarization light and right-handed infrared circular polarization light.The infrared circular polarization detector of the present application can realize chiral judgment of infrared circular polarization light at room temperature, and improve the detection accuracy, sensitivity and efficiency of the infrared circular polarization detector.
Need to check novelty before this filing date? Find Prior Art