Power amplifier tube protection circuit
By designing detection and control components in the power amplifier tube protection circuit, orderly power supply to the GaN power amplifier tube was achieved, solving the problem of low power-on control efficiency, improving system reliability, and reducing maintenance costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUNWAVE COMM
- Filing Date
- 2026-03-03
- Publication Date
- 2026-06-23
AI Technical Summary
Existing technologies have low power-on control efficiency for third-generation wide-bandgap semiconductor power gallium nitride (GaN) power amplifier transistors, which are easily damaged due to improper power-on and power-off sequence requirements for gate and drain voltages.
A power amplifier tube protection circuit is designed, including a first detection component, a second detection component, and a control component. By detecting the status of the negative voltage chip and the power supply, the power supply status of the gate and drain of the power amplifier tube is controlled to ensure orderly power supply.
It improves the power-on control efficiency of power amplifier tubes, prevents damage caused by abnormal power supply, enhances system reliability and stability, and reduces equipment failure rate and maintenance costs.
Smart Images

Figure CN122268288A_ABST