Visible light extended inGaAs detector and method of making same

By introducing a nanostructured composite antireflective film system and surface thinning treatment into the InGaAs detector, the problem of low photoelectric conversion efficiency of the InGaAs detector in the visible and near-infrared bands was solved, and a photoelectric conversion effect with a wide spectral response was achieved.

CN122269822APending Publication Date: 2026-06-23KUNMING INST OF PHYSICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KUNMING INST OF PHYSICS
Filing Date
2026-03-02
Publication Date
2026-06-23

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Abstract

This invention discloses a visible light extended InGaAs detector and its fabrication method. According to this method, an internal structure is formed from bottom to top as p... + Type-contact metal electrode, oxide nitride passivation layer, p + Type InP contact layer, n ‑ Type InGaAsP composition graded layer, n ‑ Type InGaAs absorber layer, n + A photoelectric sensor based on a composite antireflective film system of InP contact layer and nanostructure was developed, and InGaAs detectors were fabricated from it, which improved the performance of the device. It can effectively absorb light in the visible to short-wave infrared band. At the same time, by combining layered thin films and nanostructures, the composite antireflective film system was constructed using the effective medium theory and film stack formula. Compared with single-layer substrate nanostructure film layer, it can effectively reduce the surface leakage current of InP contact layer. Compared with traditional layered medium antireflection film, it also has certain wide-spectrum and wide-angle antireflection characteristics.
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