A system and method for reducing wafer bow in a semiconductor epitaxial wafer process

Abstract

This invention discloses a system and operating method for reducing silicon wafer warpage in semiconductor epitaxial wafer processes, relating to the field of semiconductor technology. The invention includes a reaction chamber with a door panel hinged to its inner wall, a placement mechanism, a cleaning mechanism, and an air blowing mechanism inside the reaction chamber. By opening the door panel, the silicon wafer is placed on top of several ejector pins. During placement, the outer side of the silicon wafer presses against a placement stage, pushing a limiting plate along an axis and compressing a first spring. The reaction force of the first spring causes the placement stage to flexibly limit the silicon wafer's perimeter, preventing it from shifting in the process airflow. Subsequently, a hydraulic system is activated, causing a laser scanner to descend and perform a full-surface scan of the silicon wafer, accurately detecting warpage data. For example, when a region is detected to warp upwards by three millimeters, an external processor calculates that the corresponding ejector pin below that region needs to be lowered by two millimeters to accommodate the deformation.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and in particular relates to a system and operating method for reducing silicon wafer warpage in semiconductor epitaxial wafer processes. Background Technology

[0002] In the semiconductor manufacturing field, epitaxy is a key step in growing single-crystal thin films on silicon substrates, and its quality directly determines the performance of subsequent devices. However, as chip manufacturing processes continue to shrink and silicon wafer sizes continue to increase, silicon wafer warpage during the process has become increasingly prominent, posing a major challenge to the yield and reliability of advanced processes.

[0003] Chinese patent CN103367217A discloses a silicon wafer adsorption device and its adsorption method, including a suction cup fixed on a workpiece stage, the suction cup having multiple suction holes distributed thereon; multiple branch pipes corresponding to and connected to the suction holes respectively; a main pipe connected to the multiple branch pipes, which extracts gas from the branch pipes and suction holes, so that a vacuum is formed between the silicon wafer and the suction cup and they are in close contact; and multiple controllers corresponding to the multiple branch pipes, which control the timing and degree of vacuum extraction by each branch pipe from the suction holes.

[0004] As shown above, the device and method include planning the timing of vacuum extraction for each of the suction holes according to the degree of warpage of the silicon wafer; planning the vacuum level of vacuum extraction for each of the suction holes according to the size of the warpage of the silicon wafer; and controlling the sub-channels to extract vacuum from the suction holes according to the planned timing and vacuum level. However, the idea of ​​this patent contradicts the physical principles of high-temperature semiconductor processes. It attempts to rigidly correct the warpage of the silicon wafer through differentiated vacuum adsorption forces, which will hinder the natural expansion of the silicon wafer when heated, induce the risk of crystal slippage or cracking, and also cause uneven contact pressure between the back of the silicon wafer and the bearing, forming local hot spots and cold spots that cannot be eliminated, completely destroying the temperature uniformity of the epitaxial layer, and introducing unpredictable additional mechanical stress, which is complexly superimposed with process thermal stress and intrinsic stress, causing the final stress state to get out of control. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a system and operating method for reducing silicon wafer warpage in semiconductor epitaxial wafer processes, thus solving the aforementioned problems.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution: a system for reducing silicon wafer warpage in semiconductor epitaxial wafer process, comprising a reaction chamber, a door panel hinged to the inner wall of the reaction chamber, a placement mechanism provided inside the reaction chamber, a cleaning mechanism provided inside the reaction chamber, and an air blowing mechanism provided inside the reaction chamber. The placement mechanism includes several cylinders fixedly connected to the inner wall of the reaction chamber. A micro motor is fixedly connected to the inner wall of each cylinder. A threaded cylinder is fixedly connected to the output shaft of the micro motor. A first lead screw is threadedly connected to the inner wall of the threaded cylinder. A ejector pin is fixedly connected to the top of the first lead screw. Two limiting shafts are fixedly connected to the bottom of the ejector pin. The outer walls of the two limiting shafts are slidably connected to the inner wall of the cylinder. Limiting components are provided on the top of each ejector pin on the outer ring of the cylinder.

[0007] Preferably, the plurality of cylinders are arranged in a circular ring, and the cylinders contain the same internal parts. The limiting assembly includes a sliding plate fixedly connected to the top of a ring of pins located on the outer side of the circle. A placement platform is slidably connected to the top of the sliding plate, a limiting plate is fixedly connected to the bottom of the placement platform, and a frame is fixedly connected to the bottom of the sliding plate.

[0008] Preferably, a shaft is fixedly connected to the inner wall of the frame, the outer wall of the shaft is slidably connected to the inner wall of the limiting plate, a first spring is fixedly connected to the inner wall of the frame, one end of the first spring is fixedly connected to the outer wall of the limiting plate, and the shaft is located inside the first spring.

[0009] Preferably, the cleaning mechanism includes a hydraulic actuator fixedly connected to the top of the reaction chamber, a laser scanner fixedly connected to the output end of the hydraulic actuator via a hydraulic rod, a housing fixedly connected to the inner wall of the reaction chamber, the laser scanner located inside the housing, a first electric push rod fixedly connected to the outer wall of the housing, a pressure plate fixedly connected to the bottom of the first electric push rod, the outer wall of the pressure plate slidably connected to the inner wall of the housing, and a brush slidably connected to the inner wall of the pressure plate.

[0010] Preferably, a telescopic rod is fixedly connected to the top of the brush, a hollow column is fixedly connected to the top of the telescopic rod, the outer wall of the hollow column is slidably connected to the inner wall of the housing, a second spring is fixedly connected to the inner wall of the hollow column, and the bottom end of the second spring is fixedly connected to the outer wall of the brush.

[0011] Preferably, the telescopic rod is located inside the second spring, a motor is fixedly connected to the outer wall of the housing, the output shaft of the motor is fixedly connected to a second lead screw through a coupling, the outer wall of the second lead screw is rotatably connected to the inner wall of the housing, and the outer wall of the second lead screw is threadedly connected to the inner wall of the hollow column.

[0012] Preferably, the air blowing mechanism includes four connecting pipes fixedly connected to the inner wall of the reaction chamber. The parts in contact with the outer walls of the four connecting pipes are all the same. All four connecting pipes are connected to an external air source. A fixed frame is fixedly connected to the bottom of each connecting pipe. A baffle is slidably connected to the inner wall of the fixed frame. A sealing frame is provided at the connection between the baffle and the fixed frame. A second electric push rod is fixedly connected to the outer wall of the baffle. The outer wall of the second electric push rod is fixedly connected to the outer wall of the fixed frame.

[0013] This invention also discloses a systematic operation method for reducing silicon wafer warpage in semiconductor epitaxial wafer processes, specifically including the following steps: S1. Open the door panel and place the silicon wafer on top of several ejector pins. When placing the wafer, the outer side of the wafer will press against the placement platform, while the reaction force provided by the first spring will limit the placement platform to position the wafer. S2. At this time, the hydraulic device descends, driving the laser scanner to descend and detect the warpage of the silicon wafer. When a certain area is detected to be warped, the micro motor below that area is activated to control the pin to descend in order to deal with the warping of the silicon wafer. S3. When the laser scanner returns to the housing after scanning, the pressure plate is moved down by the first electric push rod, which moves the position of the brush. Then, the motor drives the brush to move laterally to clean the scanning window of the laser scanner.

[0014] The present invention has the following beneficial effects: 1. A system and operation method for reducing silicon wafer warpage in the semiconductor epitaxial wafer process: The door panel is opened, and the silicon wafer is placed on top of several ejector pins. During placement, the outer side of the silicon wafer presses against the placement stage, pushing the limiting plate to move along the axis and compressing the first spring. The reaction force of the first spring causes the placement stage to form a flexible limit around the silicon wafer, preventing it from shifting in the process airflow. Then, the hydraulic system is activated, causing the laser scanner to descend and perform a full-surface scan of the silicon wafer to accurately detect warpage data. For example, when a region is detected to be warped by 3 mm, the external processor calculates that the corresponding ejector pin in that region needs to be lowered by 2 mm to adapt to the deformation. The external controller then starts the micro motor, drives the threaded cylinder to rotate, and drives the first lead screw and ejector pins to descend precisely. During this process, the limiting shaft slides inside the cylinder to ensure that the ejector pins only move vertically, thereby achieving stable and controllable adaptive support adjustment.

[0015] 2. The system and operation method for reducing silicon wafer warpage in the semiconductor epitaxial wafer process: After the laser scanner completes the inspection, the hydraulic unit controls the hydraulic rod to retract and return it to the housing. When it is necessary to clean the scanning window, the first electric push rod is extended to push the pressure plate downward, which drives the brush and telescopic rod to move down synchronously and stretches the second spring. After the brush is lowered below the scanning window, the motor is started to drive the second lead screw to rotate, so that the hollow column moves laterally along the lead screw, thereby driving the brush to horizontally sweep across the surface of the scanning window to complete the wiping and cleaning. The whole process does not require disassembly or manual intervention, realizing the automation and efficiency of measurement window maintenance.

[0016] 3. A system and operation method for reducing silicon wafer warpage in the semiconductor epitaxial wafer process: Four connecting pipes are connected to an external gas source and supply process gas to the reaction chamber. When the laser scanner detects that a certain area of ​​the silicon wafer, such as corresponding partition A, shows upward warping, the system determines that the gas supply to that area needs to be reduced to suppress the local growth rate and cooling intensity. At this time, the second electric push rod corresponding to that partition is controlled to retract, driving the baffle to move within the fixed frame, thereby reducing the effective flow cross section of the gas channel and realizing linear adjustment of the airflow in that partition. The total external gas source automatically adapts to the total intake volume according to the opening of each baffle. This mechanism directly intervenes in gas distribution and local convection cooling with simple mechanical action. Macroscopic airflow regulation can be achieved by controlling only four partitions, reducing the complexity of the system, failure rate, and manufacturing, assembly and maintenance costs, and improving the engineering practicality and reliability of the device.

[0017] Of course, any product implementing this invention does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the hydraulic device structure of the present invention; Figure 3 This is a schematic diagram of the ejector pin structure of the present invention; Figure 4 This is a schematic diagram of the placement platform structure of the present invention; Figure 5 This is a schematic diagram of the laser scanner structure of the present invention; Figure 6 This is a schematic diagram of the connecting pipeline structure of the present invention; Figure 7 For the present invention Figure 6 Enlarged structural diagram at point A in the middle.

[0020] The attached diagram lists the components represented by each number as follows: 1. Reaction chamber; 101. Door panel; 2. Placement mechanism; 201. Cylinder; 202. Micro motor; 203. Threaded cylinder; 204. First lead screw; 205. Ejector pin; 206. Limiting shaft; 207. Sliding plate; 208. Placement stage; 209. Limiting plate; 210. Frame; 211. Shaft; 212. First spring; 3. Cleaning mechanism; 301. Hydraulic unit; 302. Laser scanner; 303. Housing; 304. First electric push rod; 305. Pressure plate; 306. Brush; 307. Telescopic rod; 308. Hollow column; 309. Second spring; 310. Motor; 311. Second lead screw; 4. Air blowing mechanism; 401. Connecting pipeline; 402. Fixing frame; 403. Baffle; 404. Sealing frame; 405. Second electric push rod. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] This invention discloses a system for reducing silicon wafer warpage in semiconductor epitaxial wafer processes, and provides the following three technical solutions: Figures 1-7 The first embodiment is shown: it includes a reaction chamber 1, and a door panel 101 is hinged to the inner wall of the reaction chamber 1. The opening and closing of the door panel 101 facilitates the loading and unloading of silicon wafers. In actual operation, the sealing of the door panel 101 is crucial to maintaining the process environment inside the reaction chamber 1. A placement mechanism 2 is provided inside the reaction chamber 1, a cleaning mechanism 3 is provided inside the reaction chamber 1, and an air blowing mechanism 4 is provided inside the reaction chamber 1. The placement mechanism 2 includes several cylinders 201 fixedly connected to the inner wall of the reaction chamber 1. A micro motor 202 is fixedly connected to the inner wall of the cylinder 201. The micro motor 202 drives the threaded cylinder 203 to rotate, which is the power source for the precise lifting and lowering movement of the ejector pin 205. The output shaft of the micro motor 202 is fixedly connected to the threaded cylinder 203. A first lead screw 204 is threadedly connected to the inner wall of the threaded cylinder 203. An ejector pin 205 is fixedly connected to the top of the first lead screw 204. The ejector pin 205 directly contacts the back of the silicon wafer. Their array together forms an adaptive support plane for flexibly supporting the silicon wafer and responding to its deformation. Two limiting shafts 206 are fixedly connected to the bottom of the ejector pin 205. The outer walls of the two limiting shafts 206 are slidably connected to the inner wall of the cylinder 201. The sliding connection between the limiting shafts 206 and the cylinder 201 ensures that the ejector pin 205 always maintains vertical movement during the lifting and lowering process, preventing swaying, thereby achieving stability in supporting the silicon wafer. Limiting components are provided on the top of the ejector pins 205 located on the outer circle.

[0023] Several cylinders 201 are arranged in a circular ring, and the internal components of the cylinders 201 are identical. This symmetrical circular ring layout ensures the uniformity of the support force distribution and provides a structural basis for subsequent independent adjustment of the zones. The limiting component includes a sliding plate 207 fixedly connected to the top of a ring of pins 205 located on the outer side of the circle. A placement platform 208 is slidably connected to the top of the sliding plate 207. The placement platform 208 is used to receive the edge of the silicon wafer during initial loading and provides flexible lateral limiting under the action of the first spring 212. A limiting plate 209 is fixedly connected to the bottom of the placement platform 208, and a frame 210 is fixedly connected to the bottom of the sliding plate 207.

[0024] A shaft 211 is fixedly connected to the inner wall of the frame 210. The outer wall of the shaft 211 is slidably connected to the inner wall of the limiting plate 209. The shaft 211 provides precise linear guidance for the movement of the limiting plate 209. A first spring 212 is fixedly connected to the inner wall of the frame 210. One end of the first spring 212 is fixedly connected to the outer wall of the limiting plate 209. The reaction force generated when the first spring 212 is compressed is transmitted to the edge of the silicon wafer through the limiting plate 209 and the placement stage 208, forming a gentle and adaptive circumferential limiting force to prevent the silicon wafer from drifting horizontally in the process airflow, while allowing the silicon wafer to move radially due to thermal expansion. The shaft 211 is located inside the first spring 212.

[0025] Figures 1-7The second embodiment is shown. The main difference from the first embodiment is that the cleaning mechanism 3 includes a hydraulic unit 301 fixedly connected to the top of the reaction chamber 1. The hydraulic unit 301 can provide a smooth and powerful linear drive to ensure the stability of the laser scanner 302 during the lifting process and avoid vibration affecting the measurement accuracy. The output end of the hydraulic unit 301 is fixedly connected to the laser scanner 302 through a hydraulic rod. A housing 303 is fixedly connected to the inner wall of the reaction chamber 1. The laser scanner 302 is located inside the housing 303. The housing 303 provides a protected housing space for the laser scanner 302 when it is not working. A first electric push rod 304 is fixedly connected to the outer wall of the housing 303. A pressure plate 305 is fixedly connected to the bottom of the first electric push rod 304. The outer wall of the pressure plate 305 is slidably connected to the inner wall of the housing 303. The pressure plate 305 serves as the driving plate for the cleaning action. Its slidable connection ensures the linearity and reliability of the action. A brush 306 is slidably connected to the inner wall of the pressure plate 305.

[0026] A telescopic rod 307 is fixedly connected to the top of the brush 306. The telescopic rod 307 allows the brush 306 to float within a certain range, ensuring that it can effectively contact the scanning window surface during cleaning without damaging the precision optical components due to excessive pressure. A hollow column 308 is fixedly connected to the top of the telescopic rod 307. The outer wall of the hollow column 308 is slidably connected to the inner wall of the housing 303. A second spring 309 is fixedly connected to the inner wall of the hollow column 308. The second spring 309 provides a downward elastic preload to the brush 306, enabling it to adaptively conform to the slightly tilted or uneven scanning window surface during cleaning, ensuring a uniform cleaning effect. The bottom end of the second spring 309 is fixedly connected to the outer wall of the brush 306.

[0027] The telescopic rod 307 is located inside the second spring 309. This coaxial design saves space and makes the transmission of elastic force more direct and stable. The motor 310 is fixedly connected to the outer wall of the housing 303. The output shaft of the motor 310 is fixedly connected to the second lead screw 311 through a coupling. The motor 310 drives the second lead screw 311 to rotate, which is the core power component that converts the rotational motion into the horizontal linear cleaning motion of the brush 306. The outer wall of the second lead screw 311 is rotatably connected to the inner wall of the housing 303, and the outer wall of the second lead screw 311 is threadedly connected to the inner wall of the hollow column 308.

[0028] Figures 1-7The third embodiment is shown. The main difference between this embodiment and the first two is that the blowing mechanism 4 includes four connecting pipes 401 fixedly connected to the inner wall of the reaction chamber 1. The four connecting pipes 401 are arranged in a ring array, corresponding to the four main fan-shaped control areas of the silicon wafer in the process chamber, so as to realize independent gas supply to each zone. The parts that come into contact with the outer wall of the four connecting pipes 401 are all the same. Using the same part design is conducive to standardized production, reducing maintenance complexity and ensuring the consistency of the operation of each zone adjustment mechanism. All four connecting pipes 401 are connected to an external gas source. A fixed frame 402 is fixedly connected to the bottom of the connecting pipes 401. A baffle 403 is slidably connected to the inner wall of the fixed frame 402. The linear sliding of the baffle 403 can linearly change the effective cross-sectional area of ​​the gas channel, thereby realizing precise and continuous adjustment of the gas flow rate of the zone. A sealing frame 404 is provided at the connection between the baffle 403 and the fixed frame 402. A second electric push rod 405 is fixedly connected to the outer wall of the baffle 403. The outer wall of the second electric push rod 405 is fixedly connected to the outer wall of the fixed frame 402.

[0029] This invention also discloses a systematic operation method for reducing silicon wafer warpage in semiconductor epitaxial wafer processes, specifically including the following steps: First, open the door panel 101 and place the silicon wafer on top of several ejector pins 205. During placement, the outer side of the silicon wafer will press against the placement stage 208, causing the limiting plate 209 to move on the shaft 211 and compress the first spring 212. The reaction force provided by the first spring 212 will also press against the limiting plate 209, causing the placement stage 208 to move and limit the silicon wafer around its perimeter, preventing the silicon wafer from shifting under the action of gas. Then, activate the hydraulic device 301 to lower the laser scanner 302, which will then tilt the silicon wafer. Curvature is detected. For example, if the laser scanner 302 detects that a certain area of ​​the silicon wafer is warped by three millimeters, the external processor calculates that the ejector pin 205 under this area needs to be lowered by two millimeters to accommodate the deformation. At this time, the external controller starts the micro motor 202, which drives the threaded cylinder 203 to rotate, thereby causing the first lead screw 204 to descend, which in turn drives the ejector pin 205 to descend. During the descent of the ejector pin 205, the limiting shaft 206 slides in the cylinder 201 to limit the ejector pin 205, so that it can only move vertically. After the laser scanner 302 completes its inspection, the hydraulic unit 301 controls the hydraulic rod to retract, causing the laser scanner 302 to return to the housing 303. When cleaning the scanning window of the laser scanner 302 is required, simply control the first electric push rod 304 to extend. At this time, the pressure plate 305 moves downward, thereby causing the brush 306 to move downward, which in turn causes the telescopic rod 307 and the second spring 309 to extend. When the brush 306 passes the scanning window of the laser scanner 302, the motor 310 is started to drive the second lead screw 311 to rotate, thereby causing the hollow column 308 to move, which in turn causes the brush 306 to move, passing over the scanning window of the laser scanner 302 to clean it. When cleaning is completed, the motor 310 stops rotating, and the first electric push rod 304 retracts, and all components return to their original positions. All four connecting pipes 401 are connected to an external gas source to heat the inside of the reaction chamber 1. If the laser scanner 302 detects that a certain area of ​​the silicon wafer is tilted upwards, the gas supply to that area should be reduced. At this time, the second electric push rod 405 retracts, driving the baffle 403 to move, reducing the volume of gas passing through the fixed frame 402. The total external air intake is reduced accordingly based on the position of the baffle 403. This mechanism uses a simple and direct method to intervene in the distribution of reaction gas and local cooling. It only needs to control the gas output of the four areas, which can reduce the failure rate of the device and significantly reduce manufacturing, assembly and maintenance costs.

[0030] Furthermore, all content not described in detail in this specification is existing technology known to those skilled in the art, and the model parameters of each electrical component are not specifically limited; conventional equipment can be used.

[0031] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0032] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process, comprising a reaction chamber, wherein a door plate is hinged to the inner wall of the reaction chamber, characterized in that, The reaction chamber is equipped with a placement mechanism, a cleaning mechanism, and an air blowing mechanism. The placement mechanism includes several cylinders fixedly connected to the inner wall of the reaction chamber. A micro motor is fixedly connected to the inner wall of each cylinder. A threaded cylinder is fixedly connected to the output shaft of the micro motor. A first lead screw is threadedly connected to the inner wall of the threaded cylinder. A ejector pin is fixedly connected to the top of the first lead screw. Two limiting shafts are fixedly connected to the bottom of the ejector pin. The outer walls of the two limiting shafts are slidably connected to the inner wall of the cylinder. Limiting components are provided on the top of each ejector pin on the outer ring of the cylinder.

2. The system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 1, characterized in that, Several cylinders are arranged in a circle, and the internal components of the cylinders are identical. The limiting assembly includes a sliding plate fixedly connected to the top of a ring of pins located on the outer side of the circle. A placement platform is slidably connected to the top of the sliding plate, a limiting plate is fixedly connected to the bottom of the placement platform, and a frame is fixedly connected to the bottom of the sliding plate.

3. The system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 2, characterized in that, A shaft is fixedly connected to the inner wall of the frame. The outer wall of the shaft is slidably connected to the inner wall of the limiting plate. A first spring is fixedly connected to the inner wall of the frame. One end of the first spring is fixedly connected to the outer wall of the limiting plate. The shaft is located inside the first spring.

4. A system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 1, characterized in that, The cleaning mechanism includes a hydraulic unit fixedly connected to the top of the reaction chamber. A laser scanner is fixedly connected to the output end of the hydraulic unit via a hydraulic rod. A housing is fixedly connected to the inner wall of the reaction chamber. The laser scanner is located inside the housing. A first electric push rod is fixedly connected to the outer wall of the housing. A pressure plate is fixedly connected to the bottom of the first electric push rod. The outer wall of the pressure plate is slidably connected to the inner wall of the housing. A brush is slidably connected to the inner wall of the pressure plate.

5. A system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 4, characterized in that, A telescopic rod is fixedly connected to the top of the brush, and a hollow column is fixedly connected to the top of the telescopic rod. The outer wall of the hollow column is slidably connected to the inner wall of the housing. A second spring is fixedly connected to the inner wall of the hollow column, and the bottom end of the second spring is fixedly connected to the outer wall of the brush.

6. A system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 5, characterized in that, The telescopic rod is located inside the second spring. A motor is fixedly connected to the outer wall of the housing. The output shaft of the motor is fixedly connected to a second lead screw via a coupling. The outer wall of the second lead screw is rotatably connected to the inner wall of the housing. The outer wall of the second lead screw is threadedly connected to the inner wall of the hollow column.

7. A system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 1, characterized in that, The air blowing mechanism includes four connecting pipes fixedly connected to the inner wall of the reaction chamber. The parts in contact with the outer walls of the four connecting pipes are all the same. All four connecting pipes are connected to an external air source. A fixed frame is fixedly connected to the bottom of each connecting pipe. A baffle is slidably connected to the inner wall of the fixed frame. A sealing frame is provided at the connection between the baffle and the fixed frame. A second electric push rod is fixedly connected to the outer wall of the baffle. The outer wall of the second electric push rod is fixedly connected to the outer wall of the fixed frame.

8. A method of operating a system for reducing silicon wafer warpage in a semiconductor epitaxial wafer process according to claim 6, characterized in that, Specifically, the following steps are included: S1. Open the door panel and place the silicon wafer on top of several ejector pins. When placing the wafer, the outer side of the wafer will press against the placement platform, while the reaction force provided by the first spring will limit the placement platform to position the wafer. S2. At this time, the hydraulic device descends, driving the laser scanner to descend and detect the warpage of the silicon wafer. When a certain area is detected to be warped, the micro motor below that area is activated to control the pin to descend in order to deal with the warping of the silicon wafer. S3. When the laser scanner returns to the housing after scanning, the pressure plate is moved down by the first electric push rod, which moves the position of the brush. Then, the motor drives the brush to move laterally to clean the scanning window of the laser scanner.

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