Substrate processing apparatus, gas supply method, method of manufacturing semiconductor device, and program product

By using a combination of processing gas and inert gas nozzles in the substrate processing apparatus, and by utilizing inert gas eddies to dilute the processing gas flow, the problem of uneven film thickness on the substrate is solved, and a more uniform film thickness distribution is achieved.

CN122279541APending Publication Date: 2026-06-26KOKUSAI DENKI KK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KOKUSAI DENKI KK
Filing Date
2020-03-19
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In the semiconductor device manufacturing process, the in-plane film thickness uniformity of the film on the substrate is poor, especially near the center of the wafer where insufficient processing gas supply leads to uneven film thickness.

Method used

Processing gas and inert gas are supplied to the processing chamber through a processing gas nozzle and an inert gas nozzle, respectively. The processing gas is directed towards the substrate side by the protrusion of the reaction tube. The eddy current of the inert gas dilutes and blocks the flow of the processing gas, thereby improving the uniformity of film thickness.

Benefits of technology

It effectively improves the in-plane film thickness uniformity on the substrate and improves the film thickness distribution near the wafer center.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention provides a substrate processing apparatus, a gas supply method, a method for manufacturing a semiconductor device, and a process product. The substrate processing apparatus includes a reaction tube constituting a processing chamber for processing a substrate, and having a first receiving portion for receiving a processing gas nozzle, and a second and third receiving portions for receiving an inert gas nozzle. The second and third receiving portions are disposed at a predetermined distance from the processing gas nozzle in the circumferential direction of the substrate, and are respectively disposed in regions divided by a straight line connecting the center of the first receiving portion and the center of the substrate. The inert gas nozzle is configured to supply inert gas to the processing chamber in a manner that forms a vortex of inert gas near the second and third receiving portions.
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