Silicon nitride silicon optical device and method of manufacturing the same

By setting a sacrificial layer pattern on the silicon waveguide structure and using a high-temperature furnace tube deposition process, the problem of uneven protective layer thickness after LPSIN etching was solved, achieving a highly efficient ion implantation process, optimizing LPSIN integration, and improving device performance and process stability.

CN122284010APending Publication Date: 2026-06-26SHANGHAI INTEGRATED CIRCUIT RESEARCH & DEVELOPMENT CENTER CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INTEGRATED CIRCUIT RESEARCH & DEVELOPMENT CENTER CO LTD
Filing Date
2024-12-24
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In existing technologies, the LPSIN etching process is difficult to control, resulting in uneven protective layer thickness, which affects the difficulty and stability of subsequent ion implantation processes. Furthermore, it requires specialized development and debugging, increasing process costs.

Method used

By setting sacrificial layer patterns on silicon waveguide structures, using sacrificial layer patterns and protective layers of different materials, combined with high-temperature furnace tube deposition and chemical mechanical polishing processes, high-performance LPSIN patterns are formed. The sacrificial layer is removed before ion implantation to ensure uniform thickness of the protective layer.

Benefits of technology

It reduces the difficulty of ion implantation process, optimizes LPSIN integration process, reduces process development and debugging costs, improves waveguide uniformity and performance, and is consistent with conventional processes, avoiding additional development work.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122284010A_ABST
    Figure CN122284010A_ABST
Patent Text Reader

Abstract

This invention discloses a silicon nitride (SiN) optical device and its manufacturing method, belonging to the field of silicon photonics technology. The manufacturing method includes: providing a substrate; forming a silicon waveguide structure on top of the substrate; and forming a protective layer with a flush top surface on the silicon waveguide structure and the substrate; forming a sacrificial layer pattern on the protective layer, the morphology of which matches the morphology of the implantation area of ​​the silicon waveguide structure, and the material of the sacrificial layer pattern being different from that of the protective layer; sequentially depositing a dielectric layer and LPSIN on the sacrificial layer pattern and the protective layer; removing at least the LPSIN at the top of the sacrificial layer pattern to form the desired LPSIN pattern; removing the dielectric layer at the top of the sacrificial layer pattern and the sacrificial layer pattern; and performing ion implantation on the silicon waveguide structure based on the LPSIN pattern. By setting a sacrificial layer pattern, the etching process problem of LPSIN is solved, the thickness uniformity of the protective layer is ensured, and the difficulty of subsequent ion implantation processes is reduced.
Need to check novelty before this filing date? Find Prior Art