Inductive element and electronic device

Abstract

This invention discloses an inductor and an electronic device. The inductor includes a magnetic core; a coil embedded in the magnetic core, the coil including multiple stacked and sequentially electrically connected electrode layers, each electrode layer having a lead-out portion; a lead-out electrode stacked on and electrically connected to the lead-out portion, the lead-out electrode including multiple connecting portions, the multiple connecting portions being stacked, and each connecting portion matching the layer level of one of the electrode layers, with adjacent connecting portions electrically connected; an external electrode disposed in the magnetic core, the external electrode being electrically connected to the lead-out electrode and the lead-out portion; and an electrode layer at the same layer as the connecting portion having a clearance structure, the clearance structure being used to avoid the connecting portion at the same layer, so that a gap is formed between the clearance structure and the connecting portion at the same layer. The inductor and electronic device using the embodiments of this invention can effectively suppress the formation of metal bridges between the electrode layers and the connecting portions, reduce the risk of short circuits in the inductor, and achieve a high yield in the fabrication of the inductor.

Description

Technical Field

[0001] This invention relates to the field of inductor technology, and more particularly to an inductor element and an electronic device. Background Technology

[0002] FPC thin-film inductor fabrication is a method for manufacturing thin-film inductor components using flexible printed circuit board (FPC) technology. It offers advantages such as ultra-thinness, good high-frequency characteristics, and ease of integration. However, the acid etching process in FPC thin-film fabrication is affected by various factors, including photolithography precision, etching solution concentration uniformity, and etching time control. Therefore, the processing precision of the pattern edges and corners is difficult to control precisely, especially in the area where dummy leads are located.

[0003] Therefore, metal residue is easily generated in the area where the dummy leads are located, which can form a metal bridge between the dummy leads and the electrode layer, leading to a short circuit risk in the inductor and a low yield in the fabrication of the inductor. Summary of the Invention

[0004] This invention discloses an inductor and an electronic device that can effectively suppress the formation of metal bridges between the electrode layer and the connection part, reduce the risk of short circuits in the inductor, and achieve a high yield in the fabrication of the inductor.

[0005] In a first aspect, embodiments of the present invention disclose an inductor element, comprising: magnetic core; A coil is embedded in a magnetic core. The coil includes multiple electrode layers stacked together, with adjacent electrode layers electrically connected. Each electrode layer has a lead-out portion. Lead-out electrodes, stacked on and electrically connected to the lead-out portion, each lead-out electrode including multiple connecting portions, the multiple connecting portions being stacked, and the layer level of each connecting portion matching the layer level of one of the electrode layers, with adjacent connecting portions being electrically connected; and An external electrode is disposed on the magnetic core and is electrically connected to the lead-out electrode and the lead-out portion; The electrode layer, which is located at the same level as the connection portion, is provided with a clearance structure. The clearance structure is used to avoid the connection portion at the same level, so that a gap is formed between the clearance structure and the connection portion at the same level.

[0006] As an optional implementation, in this embodiment of the invention, the number of the lead-out portion, the lead-out electrode, and the external electrode are all two, and they are paired one-to-one. The number of the avoidance structures provided in the electrode layer is equal to the number of the connecting portions in the same layer.

[0007] As an optional implementation, in this embodiment of the invention, the plurality of electrode layers include a first lead-out electrode layer, a plurality of intermediate electrode layers and a second lead-out electrode layer that are stacked sequentially and electrically connected, and the two lead-out portions are respectively formed in the first lead-out electrode layer and the second lead-out electrode layer; Each of the connecting portions stacked on the first lead-out electrode layer is hierarchically matched with one of the plurality of intermediate electrode layers and the second lead-out electrode layer; Each of the connecting portions stacked on the second lead electrode layer is hierarchically matched with one of the plurality of intermediate electrode layers and the first lead electrode layer.

[0008] As an optional implementation, in this embodiment of the invention, the plurality of connecting portions superimposed on the first lead-out electrode layer are matched one-to-one with the layers of the plurality of intermediate electrode layers and the second lead-out electrode layer; The plurality of connecting portions stacked on the second lead electrode layer are matched one-to-one with the layers in the plurality of intermediate electrode layers and the first lead electrode layer; The first lead electrode layer is provided with the aforementioned avoidance structure to avoid a connection portion of the same level; Each of the intermediate electrode layers is provided with two avoidance structures, which are respectively used to avoid two of the connection portions at the same level; The second lead electrode layer is provided with the aforementioned avoidance structure to avoid a connection portion of the same layer.

[0009] As an optional implementation, in this embodiment of the invention, the distance between the avoidance structure and the connecting part at the same level is d, where 20μm≤d≤100μm.

[0010] As an optional implementation, in this embodiment of the invention, the avoidance structure is configured as a curved section formed between the two ends of the electrode layer, and the curved section is recessed relative to the electrode layer on the side facing the connection portion of the same level, so as to form the spacing with the connection portion of the same level.

[0011] As an optional implementation, in this embodiment of the invention, the side of the curved section that is away from the connecting portion of the same level is convex outward relative to the electrode layer.

[0012] As an optional implementation, in this embodiment of the invention, the curved section has a first arc surface formed on the side facing the connecting part of the same level, and the arc of the first arc surface is α, 5°≤α≤50°.

[0013] As an optional implementation, in this embodiment of the invention, the width of the electrode layer at the avoidance structure is equal to the width of the electrode layer at the rest of the locations.

[0014] As an optional implementation, in this embodiment of the invention, the extension length of the avoidance structure is h, where 100μm≤h≤300μm.

[0015] As an optional implementation, in this embodiment of the invention, the extension length of the electrode layer is L, and the extension length of the avoidance structure is h, where 0.05L≤h≤0.25L.

[0016] As an optional implementation, in this embodiment of the invention, an insulating layer is provided between two adjacent electrode layers, and the insulating layer is located between two adjacent connection portions.

[0017] As an optional implementation, in this embodiment of the invention, a portion of the electrode layer includes a plurality of stacked first composite layers and a first welding layer, with a first welding layer disposed between two adjacent first composite layers, the avoidance structure being formed in the first composite layer and the first welding layer, and the connection portion at the same level as the portion of the electrode layer includes a plurality of stacked second composite layers and a second welding layer, with a second welding layer disposed between two adjacent second composite layers.

[0018] Secondly, embodiments of this application disclose an electronic device including an inductor as described in the first aspect.

[0019] Compared with the prior art, the embodiments of the present invention have at least the following beneficial effects: In this embodiment of the invention, by setting an avoidance structure on the electrode layer at the same level as the connection part, the avoidance structure avoids the connection part at the same level. Compared with the electrode layer without an avoidance structure, the spacing formed between the electrode layer and the connection part at the same level can be increased. This spacing can cover the maximum accumulation and overlap range of metal residues (such as micron-sized debris and flocculent matter) in the FPC acid etching process. From the spatial layout, the path of metal residues as a conductive medium connecting the electrode layer and the connection part is directly blocked, thereby effectively suppressing the formation of metal bridges between the two, reducing the risk of short circuits in the inductor element, and resulting in a high yield of inductor element fabrication. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of an inductor element disclosed in Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of the structure of an inductor (without the magnetic core) disclosed in Embodiment 1 of the present invention; Figure 3 This is a schematic diagram of the structure of an inductor (without the magnetic core) disclosed in Embodiment 1 of the present invention from another perspective; Figure 4 This is a schematic diagram of the structure of the electrode layer and the connecting part at the same level as disclosed in Embodiment 1 of the present invention; Figure 5 This is an exploded structural diagram of an inductor element disclosed in Embodiment 1 of the present invention; Figure 6 This is a schematic diagram of the structure of an inductor element (without magnetic core and external electrodes) disclosed in Embodiment 1 of the present invention; Figure 7 This is a schematic diagram of the structure of the intermediate electrode layer and the connecting part at the same level as disclosed in Embodiment 1 of the present invention; Figure 8 This is a schematic diagram of the electrode layer and the connecting part of the same level disclosed in Embodiment 1 of the present invention from another perspective; Figure 9 This is a simplified structural diagram of the electronic device disclosed in Embodiment 2 of the present invention.

[0022] Explanation of main figure symbols 100. Inductor element; 10. Magnetic core; 20. Coil; 20a. Lead-out portion; 21. Electrode layer; 21a. First lead-out electrode layer; 21b. Intermediate electrode layer; 21c. Second lead-out electrode layer; 211. Avoidance structure; 211a. First arc surface; 212. First composite layer; 213. First welding layer; 30. Lead-out electrode; 31. Connecting portion; 311. Second composite layer; 312. Second welding layer; 40. External electrode; 50. Insulating layer; 200. Electronic device. Detailed Implementation

[0023] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] In this invention, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing the invention and its embodiments, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to be constructed and operated in a specific orientation.

[0025] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in certain situations to indicate a dependency or connection. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0026] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0027] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0028] This invention discloses an inductor and an electronic device that can effectively suppress the formation of metal bridges between the electrode layer and the connection part, reduce the risk of short circuits in the inductor, and achieve a high yield in the fabrication of the inductor. Example 1 Please refer to the following: Figures 1 to 3This is a schematic diagram of the structure of an inductor 100 provided in Embodiment 1 of the present invention. The inductor 100 includes a magnetic core 10, a coil 20, a lead electrode 30, and an external electrode 40. The coil 20 is embedded in the magnetic core 10 and includes multiple electrode layers 21. The multiple electrode layers 21 are stacked and adjacent two electrode layers 21 are electrically connected. The multiple electrode layers 21 have lead-out portions 20a. The lead electrode 30 is stacked on the lead-out portion 20a and electrically connected to the lead-out portion 20a. The lead electrode 30 includes multiple connecting portions 31. The multiple connecting portions 31 are stacked and the layer of each connecting portion 31 matches the layer of one of the electrode layers 21. Adjacent two connecting portions 31 are electrically connected. The external electrode 40 is disposed in the magnetic core 10 and is electrically connected to the lead electrode 30 and the lead-out portion 20a. Among them, such as Figure 4 As shown, the electrode layer 21, which is located at the same level as the connection portion 31, is provided with a clearance structure 211. The clearance structure 211 is used to avoid the connection portion 31 at the same level, so that a gap is formed between the clearance structure 211 and the connection portion 31 at the same level.

[0029] In this context, matching the layer level of each connection portion 31 with the layer level of one of the electrode layers 21 means that the stacked electrode layers 21 are divided into multiple layers, and each connection portion 31 should be located in one of these multiple layers, rather than in the area between two layers or across multiple layers. For example, when the number of stacked electrode layers 21 is 20, the total number of layers is 20, namely the first layer, the second layer, the third layer... the twentieth layer. Of course, the number of stacked electrode layers 21 can also be 25, 30, 35, 40, 45, etc., and this embodiment does not specifically limit this.

[0030] Considering that multiple connecting parts 31 are stacked on the lead-out part 20a, and the lead-out part 20a is located in one of the layers (first or twentieth), the number of multiple connecting parts 31 stacked can be at most 19, or it can be 18, 17, 16, 15, ..., 2, etc. This embodiment does not make a specific limitation on this.

[0031] In some other embodiments, the connecting portion 31 of the lead-out portion 20a may be a single portion.

[0032] In this embodiment, by setting an avoidance structure 211 on the electrode layer 21 at the same level as the connection part 31, the avoidance structure 211 avoids the connection part 31 at the same level, so that a large gap is formed between the two. This gap can cover the maximum accumulation and overlap range of metal residues (such as micron-sized debris and flocculent matter) in the FPC acid etching process. From the spatial layout, the path of metal residues as a conductive medium to connect the electrode layer 21 and the connection part 31 is directly blocked, thereby effectively suppressing the formation of metal bridges between the two, reducing the risk of short circuit in the inductor element 100, and the fabrication yield of the inductor element 100 is high.

[0033] In some embodiments, such as Figure 5 and Figure 6 As shown, there are two leads 20a, two leads 30 and two external electrodes 40, and they are paired one by one. The number of clearance structures 211 provided in the electrode layer 21 is equal to the number of connection parts 31 in the same layer.

[0034] The number of clearance structures 211 provided in the electrode layer 21 can be 0, that is, if the layer where the electrode layer 21 is located does not have a connection part 31, then the electrode layer 21 does not need to be provided with clearance structures 211.

[0035] By setting avoidance structures 211 in the electrode layer 21, and using a number of avoidance structures 211 corresponding to the connection portions 31 of the same level to avoid the connection portions 31 of the same level, compared with the electrode layer 21 without avoidance structures 211, the spacing formed between the electrode layer 21 and the connection portions 31 of the same level can be increased. This spacing can cover the maximum accumulation and overlap range of metal residues (such as micron-sized debris and flocculents) in the FPC acid etching process. From the spatial layout, the path of metal residues as conductive medium connecting the electrode layer 21 and the connection portion 31 is directly blocked, thereby effectively suppressing the formation of metal bridges between the two, reducing the risk of short circuit in the inductor element 100, and resulting in a higher yield of inductor element 100.

[0036] For example, the plurality of electrode layers 21 include a first lead electrode layer 21a, a plurality of intermediate electrode layers 21b and a second lead electrode layer 21c that are stacked sequentially and electrically connected. Two leads 20a are formed on the first lead electrode layer 21a and the second lead electrode layer 21c, respectively. Each connection portion 31 stacked on the first lead electrode layer 21a matches one of the layers in the plurality of intermediate electrode layers 21b and the second lead electrode layer 21c. Each connection portion 31 stacked on the second lead electrode layer 21c matches one of the layers in the plurality of intermediate electrode layers 21b and the first lead electrode layer 21a. In this way, by dividing the multiple electrode layers 21 into a first lead-out electrode layer 21a, an intermediate electrode layer 21b, and a second lead-out electrode layer 21c, each connection portion 31 stacked on the first lead-out electrode layer 21a is matched with one level of the multiple intermediate electrode layers 21b and the second lead-out electrode layer 21c. Thus, the number of multiple connection portions 31 stacked on the first lead-out electrode layer 21a can be less than or equal to the total number of the multiple intermediate electrode layers 21b and the second lead-out electrode layer 21c. For example, the number of multiple connection portions 31 stacked on the first lead-out electrode layer 21a is two, which are matched with one level of the intermediate electrode layer 21b and the second lead-out electrode layer 21c, or matched with the levels of the two intermediate electrode layers 21b. Each connection portion 31 stacked on the second lead electrode layer 21c is matched with one of the layers of the plurality of intermediate electrode layers 21b and the first lead electrode layer 21a. The number of the plurality of connection portions 31 stacked on the second lead electrode layer 21c can be less than or equal to the total number of the plurality of intermediate electrode layers 21b and the first lead electrode layer 21a. For example, the number of the plurality of connection portions 31 stacked on the second lead electrode layer 21c is two, which are matched with one layer of intermediate electrode layer 21b and the first lead electrode layer 21a, or matched with the layers of two intermediate electrode layers 21b.

[0037] Of course, taking the multiple connecting portions 31 stacked on the first lead electrode layer as an example, when the number of the multiple connecting portions 31 is equal to the total number of the multiple intermediate electrode layers 21b and the second lead electrode layer 21c, then one of the connecting portions 31 is matched with the layer level of the second lead electrode layer 21c, and the remaining multiple connecting portions 31 are matched with the layer levels of the multiple intermediate electrode layers 21b one by one.

[0038] In some embodiments, the plurality of connecting portions 31 stacked on the first lead electrode layer 21a are matched one-to-one with the layers in the plurality of intermediate electrode layers 21b and the second lead electrode layer 21c, and the plurality of connecting portions 31 stacked on the second lead electrode layer 21c are matched one-to-one with the layers in the plurality of intermediate electrode layers 21b and the first lead electrode layer 21a. The first lead electrode layer 21a is provided with a clearance structure 211 to clearance one connecting portion 31 of the same layer, each intermediate electrode layer 21b is provided with two clearance structures 211 to clearance two connecting portions 31 of the same layer respectively, and the second lead electrode layer 21c is provided with a clearance structure 211 to clearance one connecting portion 31 of the same layer.

[0039] By providing different numbers of avoidance structures 211 for the connecting parts 31 of the same level in the first lead electrode layer 21a, the intermediate electrode layer 21b, and the second lead electrode layer 21c, respectively, one avoidance structure 211 is provided for each of the first lead electrode layer 21a and the second lead electrode layer 21c to adapt to a single connecting part 31 of the same level, and two avoidance structures 211 are provided for the intermediate electrode layer 21b to adapt to two connecting parts 31 of the same level, precise matching between the avoidance structures 211 and the connecting parts 31 of each level is achieved. This layered adaptation design ensures that each connecting part 31 can be specifically avoided without any blind spots, ensuring the suppression effect of metal bridging at each level, while also avoiding the reduction in the performance of the coil 20 due to excessive use of avoidance structures 211.

[0040] In some embodiments, an insulating layer 50 is provided between two adjacent electrode layers 21, and the insulating layer 50 is located between two adjacent connecting portions 31.

[0041] By providing an insulating layer 50 between two adjacent electrode layers 21 and using the insulating layer 50 to separate two adjacent connection parts 31, short circuits caused by interlayer metal residue and leakage can be avoided.

[0042] For example, such as Figure 7 As shown, the partial electrode layer 21 includes multiple stacked first composite layers 212 and first welding layers 213, with a first welding layer 213 between two adjacent first composite layers 212. A clearance structure 211 is formed between the first composite layers 212 and the first welding layers 213. The connection portion 31 at the same level as the partial electrode layer 21 includes multiple stacked second composite layers 311 and second welding layers 312, with a second welding layer 312 between two adjacent second composite layers 311.

[0043] By designing a partial electrode layer 21 using multiple stacked first composite layers 212 combined with a first welding layer 213, and the connection portion 31 at the same level as the partial electrode layer 21 using multiple stacked second composite layers 311 combined with a second welding layer 312, the fabrication process is simpler and more efficient. Moreover, the welding layer design can improve the fabrication yield of the inductor element 100 compared to the via electrical connection method.

[0044] In this design, the electrode layer 21, which is designed with multiple stacked first composite layers 212 and a first welding layer 213, can be an intermediate electrode layer 21b. The connection portion 31, which is at the same level as the intermediate electrode layer 21b, uses multiple stacked second composite layers 311 and a second welding layer 312. Of course, in some other embodiments, the first lead-out electrode layer 21a and the second lead-out electrode layer 21c can also adopt the above design.

[0045] Optionally, such as Figure 4 As shown, the distance between the avoidance structure 211 and the connection part 31 at the same level is d, 20μm≤d≤100μm.

[0046] If the spacing d between the avoidance structure 211 and the connection portion 31 on the same layer is less than 20 μm, then the spacing d is too small and cannot completely cover the maximum accumulation and overlap range of metal residues (such as micron-sized debris and flocculent matter) in the FPC acid etching process. This can easily lead to metal bridging due to metal residue overlap, thereby causing a short circuit risk. If the spacing d between the avoidance structure 211 and the connection portion 31 on the same layer is greater than 100 μm, then the spacing d is too large and will cause serious waste of space in the electrode layer 21. In addition, the connection portion 31 is likely to be close to the cutting line of the inductor element 100. During the cutting process, there is a risk of cutting the connection portion 31 or drawing wires, which will affect the fabrication yield of the inductor element 100. Therefore, the spacing d between the avoidance structure 211 and the connection part 31 at the same level can be 20μm≤d≤100μm. This ensures the maximum accumulation and overlap of metal residues in the full FPC acid etching process, thereby suppressing the formation of metal bridges, while avoiding space waste and the risk of cutting, and improving the fabrication yield of the inductor element 100.

[0047] Furthermore, the distance d formed between the avoidance structure 211 and the connection part 31 at the same level can be 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc., and this embodiment does not make a specific limitation on it.

[0048] In some embodiments, such as Figure 8As shown, the avoidance structure 211 is configured as a curved section formed between the two ends of the electrode layer 21, and the curved section is recessed relative to the electrode layer 21 on the side facing the connection portion 31 of the same level, so as to form a gap with the connection portion 31 of the same level.

[0049] By configuring the avoidance structure 211 as a concave curved section between the two ends of the electrode layer 21, the spacing formed between the connection portions 31 of the same layer can be increased by utilizing the concave design. Furthermore, the curved transition of the curved section can reduce the occurrence of tension concentration at the corners of the electrode layer 21 during etching, thereby improving the problem of uneven etching at sharp corners.

[0050] Optionally, the extended structure of the curved section can be S-shaped, hook-shaped, etc., and this embodiment does not specifically limit it.

[0051] In some other embodiments, the avoidance structure 211 may also be configured as a straight line segment formed between the two ends of the electrode layer 21, the straight line segment being inclined relative to the extension direction of the electrode layer 21 itself, or the inclined direction being tangential to the extension direction of the electrode layer 21 itself. This embodiment does not specifically limit this.

[0052] For example, such as Figure 8 As shown, the curved section protrudes outward from the electrode layer 21 on the side opposite to the connecting part 31 of the same level.

[0053] By making the side of the curved section away from the connection portion 31 of the same level protrude outward relative to the electrode layer 21, the width loss of the electrode layer 21 at the avoidance structure 211 caused by the side of the curved section facing the connection portion 31 of the same level being concave relative to the electrode layer 21 can be compensated. This makes the width of the electrode layer 21 at the avoidance structure 211 consistent with the width of the electrode layer 21 at other positions, thereby avoiding the situation where the coil 20 experiences localized heating when conducting, which affects the performance and service life of the inductor 100.

[0054] Optionally, a first arc surface 211a is formed on the side of the curved section facing the connection part 31 of the same level, and the arc of the first arc surface 211a is α, 5°≤α≤50°.

[0055] If the curvature α of the first arc surface 211a is less than 5°, the first arc surface 211a is too gentle and almost flat, which cannot form an effective avoidance. It is easy for metal residue to appear and cause metal bridging between the metal layer and the connecting part 31. Moreover, the corners of the near-flat surface are prone to stress concentration, which aggravates the problems of uneven etching, linewidth deviation and metal residue, and affects the fabrication yield of the inductor element 100. If the curvature α of the first arc surface 211a is greater than 50°, the arc surface is too steep and will cause redundant space in the avoidance area, wasting the effective conductive area of ​​the electrode layer 21. It may also cause the etching solution to stagnate in the depression of the first arc surface 211a, increasing the risk of residue accumulation. Therefore, the curvature α of the first arc surface 211a can be 5°≤α≤50°, which can accurately match the spacing design requirements, maximize the retention of the conductive area of ​​the electrode layer 21 while ensuring effective avoidance, and balance the avoidance effect and space utilization. Furthermore, it can effectively reduce corner tension concentration, improve etching uniformity, avoid linewidth compression and metal residue, improve the pattern accuracy of electrode layer 21, and achieve a high yield of inductor element 100 fabrication.

[0056] Furthermore, the arc α of the first arc surface 211a can be 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, etc., and this embodiment does not make specific limitations on it.

[0057] In some embodiments, the width of the electrode layer 21 at the avoidance structure 211 is equal to the width of the electrode layer 21 at the rest of the electrode layer 21.

[0058] By ensuring that the width of the electrode layer 21 at the avoidance structure 211 is consistent with the width of the rest of the electrode layer 21, the situation where local heating occurs in the coil 20 when it is turned on, which would affect the performance and service life of the inductor 100, is avoided.

[0059] Optionally, the extension length of the avoidance structure 211 is h, where 100μm≤h≤300μm.

[0060] If the extension length h of the avoidance structure 211 is less than 100 μm, the insufficient extension length will result in a small coverage area for the avoidance region, making it impossible to completely avoid the connection part 31 and the area where metal residue easily accumulates. This can easily lead to local avoidance blind spots, increasing the risk of metal bridging and short circuits. Furthermore, an excessively short extension length can cause a more abrupt transition at the avoidance structure 211, exacerbating etching stress concentration. If the extension length h of the avoidance structure 211 is greater than 300 μm, the excessive extension length will over-occupy the space of the electrode layer 21, compressing the effective conductive area and resulting in a smaller saturation current. Therefore, the extension length h of the avoidance structure 211 can be 100 μm ≤ h ≤ 300 μm. This can accurately cover the connection part 31 and the area where metal residue accumulates, ensuring effective avoidance throughout the entire area. At the same time, it allows for a larger effective conductive area of ​​the electrode layer 21, balancing the avoidance effect and space utilization, and improving the saturation current.

[0061] Furthermore, the extension length h of the avoidance structure 211 can be 100μm, 125μm, 150μm, 175μm, 200μm, 225μm, 250μm, 275μm, 300μm, etc., and this embodiment does not make a specific limitation on it.

[0062] For example, the extension length of the electrode layer 21 is L, and the extension length of the avoidance structure 211 is h, where 0.05L≤h≤0.25L.

[0063] If the extension length h of the avoidance structure 211 is less than 0.05L, the insufficient extension length will result in a small coverage area for the avoidance region, making it impossible to completely avoid the connection part 31 and the area where metal residue easily accumulates. This can easily lead to local avoidance blind spots, increasing the risk of metal bridging and short circuits. Furthermore, an excessively short extension length can cause a more abrupt transition at the avoidance structure 211, exacerbating etching stress concentration. If the extension length h of the avoidance structure 211 is greater than 0.25L, the excessively long extension length will over-occupy the space of the electrode layer 21, compressing the effective conductive area and resulting in a smaller saturation current. Therefore, the extension length h of the avoidance structure 211 can be 0.05L ≤ h ≤ 0.25L, which can accurately cover the connection part 31 and the area where metal residue accumulates, ensuring effective avoidance throughout the entire area. At the same time, it makes the effective conductive area of ​​the electrode layer 21 larger, balancing the avoidance effect and space utilization, and improving the saturation current.

[0064] Furthermore, the extension length h of the avoidance structure 211 can be 0.05L, 0.1L, 0.15L, 0.2L, 0.25L, etc., and this embodiment does not make a specific limitation on it.

[0065] Example 2 Please see Figure 9 This is a schematic diagram of the structure of an electronic device 200 provided in Embodiment 2 of the present invention. The electronic device 200 includes the inductor 100 of Embodiment 1.

[0066] The foregoing has provided a detailed description of an inductor and electronic device disclosed in the embodiments of the present invention. This document uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the inductor and electronic device of the present invention and its core ideas. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. An inductor element, characterized in that, include: magnetic core; A coil is embedded in a magnetic core. The coil includes multiple electrode layers stacked together, with adjacent electrode layers electrically connected. Each electrode layer has a lead-out portion. The lead electrode is stacked on the lead portion and electrically connected to the lead portion. The lead electrode includes multiple connecting portions, which are stacked and the layer of each connecting portion matches the layer of one of the electrode layers. Adjacent connecting portions are electrically connected. as well as An external electrode is disposed on the magnetic core and is electrically connected to the lead-out electrode and the lead-out portion; The electrode layer, which is located at the same level as the connection portion, is provided with a clearance structure. The clearance structure is used to avoid the connection portion at the same level, so that a gap is formed between the clearance structure and the connection portion at the same level.

2. The inductor element according to claim 1, characterized in that, The number of each lead-out portion, lead-out electrode, and external electrode is two, and they are paired one-to-one. The number of avoidance structures provided in the electrode layer is equal to the number of connecting portions in the same layer.

3. The inductor element according to claim 2, characterized in that, The plurality of electrode layers include a first lead electrode layer, a plurality of intermediate electrode layers and a second lead electrode layer that are stacked sequentially and electrically connected, and the two lead portions are respectively formed in the first lead electrode layer and the second lead electrode layer; Each of the connecting portions stacked on the first lead-out electrode layer is hierarchically matched with one of the plurality of intermediate electrode layers and the second lead-out electrode layer; Each of the connecting portions stacked on the second lead electrode layer is hierarchically matched with one of the plurality of intermediate electrode layers and the first lead electrode layer.

4. The inductor element according to claim 3, characterized in that, The plurality of connecting portions stacked on the first lead-out electrode layer are matched one-to-one with the layers in the plurality of intermediate electrode layers and the second lead-out electrode layer; The plurality of connecting portions stacked on the second lead electrode layer are matched one-to-one with the layers in the plurality of intermediate electrode layers and the first lead electrode layer; The first lead electrode layer is provided with the aforementioned avoidance structure to avoid a connection portion of the same level; Each of the intermediate electrode layers is provided with two avoidance structures, which are respectively used to avoid two of the connection portions at the same level; The second lead electrode layer is provided with the aforementioned avoidance structure to avoid a connection portion of the same layer.

5. The inductor element according to any one of claims 1 to 4, characterized in that, The distance between the avoidance structure and the connecting part at the same level is d, where 20μm≤d≤100μm.

6. The inductor element according to any one of claims 1 to 4, characterized in that, The avoidance structure is configured as a curved section formed between the two ends of the electrode layer, and the curved section is recessed relative to the electrode layer on the side facing the connection portion of the same level, so as to form the spacing with the connection portion of the same level.

7. The inductor element according to claim 6, characterized in that, The curved section is convex outward relative to the electrode layer on the side opposite to the connecting part of the same level.

8. The inductor element according to claim 6, characterized in that, The curved section has a first arc surface on one side facing the connecting part of the same level, and the arc of the first arc surface is α, 5°≤α≤50°.

9. The inductor element according to any one of claims 1 to 4, characterized in that, The width of the electrode layer at the avoidance structure is equal to the width of the electrode layer at the rest of the structure.

10. The inductor element according to any one of claims 1 to 4, characterized in that, The extension length of the avoidance structure is h, where 100μm≤h≤300μm.

11. The inductor element according to any one of claims 1 to 4, characterized in that, The electrode layer has an extension length of L, and the avoidance structure has an extension length of h, where 0.05L ≤ h ≤ 0.25L.

12. The inductor element according to any one of claims 1 to 4, characterized in that, An insulating layer is provided between two adjacent electrode layers, and the insulating layer is located between two adjacent connection portions.

13. The inductor element according to any one of claims 1 to 4, characterized in that, The electrode layer includes multiple stacked first composite layers and first welding layers, with a first welding layer between two adjacent first composite layers. The avoidance structure is formed in the first composite layer and the first welding layer. The connection portion at the same level as the electrode layer includes multiple stacked second composite layers and second welding layers, with a second welding layer between two adjacent second composite layers.

14. An electronic device, characterized in that, Including the inductor as described in any one of claims 1 to 13.

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