Composite material, method for producing the same, thin film, light emitting device, and display device

Abstract

This application discloses a composite material and its preparation method, thin film, light-emitting device and display device. The composite material includes quantum dots and carbon nanotubes, and the quantum dots and the carbon nanotubes are connected by group A as shown in the following structural formula: The composite material of this application has high stability.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a composite material and its preparation method, a thin film, a light-emitting device, and a display device. Background Technology

[0002] Quantum dots (QDs), also known as semiconductor nanocrystals, possess unique quantum size effects, macroscopic quantum tunneling effects, and surface effects, which give them outstanding physical properties, especially their optical properties, such as tunable spectrum, high luminescence intensity, high color purity, long fluorescence lifetime, and the ability to excite multicolor fluorescence from a single light source.

[0003] However, the stability of existing quantum dots is poor and needs further improvement. Summary of the Invention

[0004] In view of this, this application provides a composite material and its preparation method, a thin film, a light-emitting device, and a display device.

[0005] This application embodiment is implemented as follows: a composite material comprising quantum dots and carbon nanotubes, wherein the quantum dots and the carbon nanotubes are connected by group A as shown in the following structural formula:

[0006]

[0007] Wherein, Ar is a substituted or unsubstituted phenylene;

[0008] L1 and L2 are linking groups, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20;

[0009] R is selected from H, D, and substituted or unsubstituted C1-C1. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups;

[0010] Ar, L1, L2, and R, wherein each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

[0011] Accordingly, this application also provides a method for preparing a composite material, comprising the following steps:

[0012] A sulfonic acid solution comprising sulfonic acid and a first solvent and a carbon nanotube dispersion comprising carbon nanotubes and a second solvent are provided, wherein the carbon nanotubes have carboxyl groups attached to their surfaces. The first compound solution and the carbon nanotube dispersion are mixed and subjected to a first heat treatment to obtain a reaction solution.

[0013] A quantum dot dispersion comprising quantum dots and a first solvent is provided; the quantum dot dispersion is mixed with the reaction solution and subjected to a second heat treatment to obtain a composite material.

[0014] The first compound has the structural formula shown in formula (I):

[0015]

[0016] Wherein, Ar is a substituted or unsubstituted phenylene;

[0017] L1 and L2 are linking groups, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4- One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20;

[0018] R is selected from H, D, and substituted or unsubstituted C1-C1. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups;

[0019] Ar, L1, L2, and R, wherein each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

[0020] Accordingly, this application also provides a thin film comprising the composite material, or the thin film comprising a composite material prepared by the preparation method.

[0021] Accordingly, this application also provides a light-emitting device, comprising an anode, a light-emitting layer and a cathode stacked sequentially, wherein the light-emitting layer comprises the composite material, or the light-emitting layer comprises the composite material prepared by the preparation method, or the light-emitting layer is the thin film.

[0022] Accordingly, this application also provides a display device including the light-emitting device.

[0023] The composite material described in this application has high stability. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of a composite material provided in an embodiment of this application;

[0026] Figure 2 This is a flowchart illustrating a method for preparing a composition according to an embodiment of this application;

[0027] Figure 3 This is a schematic diagram of an intermediate material provided in an embodiment of this application;

[0028] Figure 4 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this application.

[0029] Figure Labels

[0030] Light-emitting device 100; anode 10; light-emitting layer 20; cathode 30; electron transport layer 40; hole transport layer 50; hole injection layer 60; quantum dot 101; carbon nanotube 102. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0032] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0033] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0034] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0035] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0036] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, whichever applies. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0037] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent.

[0038] In this application, when no linking site is specified in the group, it means that any linkable site in the group is selected as the linking site.

[0039] In this application, when the same substituent appears multiple times, it can be independently selected from different groups. If the general formula contains multiple R1s, then R1s can be independently selected from different groups.

[0040] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, wherein R is selected from, but is not limited to: deuterium, cyano, isocyano, nitro or halogen, C1-30 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR'R", silyl, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, halocarbamoyl, etc. Formyl, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, and the above groups may be further substituted with substituents acceptable in the art; it is understood that R' and R" in -NR'R" are independently selected from, but not limited to: H, deuterium, cyano, isocyano, nitro or halogen, C1-10 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, and heteroaromatic group containing 5-20 ring atoms.

[0041] In this application, "ring atom number" refers to the number of atoms in the ring itself of a structural compound (e.g., a monocyclic compound, a fused-ring compound, a cross-linked compound, a carbocyclic compound, or a heterocyclic compound) obtained by atomic bonding to form a ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "ring atom number" described below unless otherwise specified. For example, a benzene ring has 6 ring atoms, a naphthalene ring has 10 ring atoms, and a thiophene group has 5 ring atoms.

[0042] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" refers to an aryl containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0043] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" refers to a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms. The heteroaryl group may optionally be further substituted, and suitable examples include, but are not limited to: thiophene, furanyl, pyrroleyl, imidazole, triazolyl, imidazoleyl, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, etc. Azinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidinyl, pyridinylpyrazinyl, pyrazinylpyrazinyl, isoquinolinyl, indolyl, carbazoleyl, benzothiopheneyl, benzofuranyl, indolyl, carbazoleyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolol, furanol, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, quinolinyl, isoquinolinyl, o-diazonaphthyl, quinoxalinyl, phenanthridine, primidyl, quinazolinyl, quinazolinone, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0044] In this application, "alkyl" can mean straight-chain, branched, or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, such as "C1-9 alkyl," refer to alkyl groups containing 1 to 9 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl The compounds include: n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, and adamantane.

[0045] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0046] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group. Where R represents an alkyl group, C1 to C2. 30 C1 to C1 of alkyl carbonyl groups 30 The number of carbon atoms in the entire group.

[0047] In this application, "aryloxy group" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc.

[0048] It should be noted that the thickness of the film in this application was measured using a step tester, and the average particle size in this application was measured using a transmission electron microscope (TEM).

[0049] During the growth and manufacturing of semiconductor materials, structural defects such as defects, impurities, and dislocations can occur due to various reasons, leading to incomplete crystal lattices and low electrical conductivity after applying an electric field. Annealing can repair these defects. Annealing alters the positions of semiconductor atoms, rearranging and loosening them within the crystal. This causes atoms at defect sites to move into the defect area or to the crystal boundary, eliminating or minimizing the defects. Simultaneously, annealing can help adjust the bandgap, improve crystal quality and crystallinity, thereby enhancing the material's electrical properties. Semiconductor annealing is a crucial process in semiconductor manufacturing, improving the electrical and structural properties of semiconductor materials and enhancing the performance and reliability of semiconductor devices.

[0050] When fabricating quantum dot light-emitting devices, different film layers need to be annealed. Conventional annealing involves direct heating, but quantum dots are very sensitive to heating temperature. Excessive temperature can cause fluorescence quenching of quantum dots, leading to damage to quantum dots, failure of light emission, and consequently, poor performance of the fabricated quantum dot light-emitting devices.

[0051] The technical solution of this application is as follows:

[0052] Firstly, please refer to Figure 1 This application provides a composite material comprising quantum dots 101 and carbon nanotubes 102, wherein the quantum dots and the carbon nanotubes are connected by group A as shown in the following structural formula:

[0053]

[0054] Wherein, Ar is a substituted or unsubstituted phenylene;

[0055] L1 and L2 are linking groups, which can be selected from, but are not limited to, single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2)m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20;

[0056] R can be selected from, but is not limited to, H, D, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups;

[0057] Ar, L1, L2, and R, wherein each of the substituents is independently selected from, but not limited to, -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

[0058] The group A is passed through O - The group A is bonded to metal ions on the surface of the quantum dot, and the bonding site* of the group A is attached to the carbon nanotube.

[0059] In the composite material, group A is expressed through the O in its sulfonate group. - By bonding with exposed metal ions on the surface of quantum dots, the anionic defects on the surface of quantum dots can be filled, thereby stably and effectively passivating the defects on the surface of quantum dots and thus improving the stability of quantum dots.

[0060] In the composite material, Ar in group A is a phenylene ring. The two adjacent benzene rings in the phenylene ring share two adjacent carbon atoms, resulting in a larger conjugated system and higher rigidity, which significantly improves the thermal stability of the composite material. On one hand, the phenylene ring in group A has high bond energy and strong intramolecular forces. This rigid structure makes it more difficult for the molecule to rotate or twist when heated, thus reducing changes in intermolecular interactions and potential thermal decomposition reactions. Higher temperatures are required to overcome the constraints of the phenylene ring structure and undergo thermal decomposition, thus exhibiting higher thermal stability. On the other hand, the simultaneous attachment of a sulfonic acid group and an amino group to the phenylene ring increases steric hindrance. This steric hindrance effect hinders the thermal motion of the molecular chain, reduces the free volume change of the molecule at high temperatures, lowers the coefficient of thermal expansion, and thus improves the thermal stability of the composite material.

[0061] In the composite material, the carbon nanotubes are connected to the quantum dots via the group A. Firstly, carbon nanotubes possess excellent thermal stability, maintaining structural and performance stability even at high temperatures. This allows for use in high-temperature environments, mitigating the impact of high-temperature annealing and prolonged high-temperature operation on their performance, effectively improving the thermal stability of the composite material. Secondly, carbon nanotubes have a high specific heat capacity. Their unique nanostructure and excellent thermal conductivity mean that after absorbing a large amount of heat, they experience only a small temperature rise, creating a relatively mild temperature environment for the quantum dots during long-term operation, preventing high-temperature environments or those requiring longer operating times, thus effectively protecting the quantum dots and extending their lifespan. Thirdly, carbon nanotubes have extremely high thermal conductivity, twice that of diamond at room temperature. This allows for the rapid conduction and dissipation of heat generated during the operation of the quantum dot-containing light-emitting device. These advantages ensure that the carbon nanotubes can absorb the heat generated by the quantum dots during light emission, preventing heat accumulation that could lead to thermal quenching and light emission failure, thereby improving the thermal stability and light-emitting performance of the composite material. Furthermore, in addition to its advantages in thermal stability, carbon nanotubes also have excellent electrical conductivity, high current carrying capacity, and are beneficial to improving the lifespan and other performance aspects of devices.

[0062] In summary, in the composite material, the quantum dots and carbon nanotubes are connected together to form a whole through the group A. The introduction of the high rigidity structure of group A improves the thermal stability of the quantum dots themselves. Simultaneously, the carbon nanotubes can effectively dissipate the heat generated by the quantum dots during long-term operation, preventing localized overheating. Furthermore, carbon nanotubes possess beneficial electrical conductivity. Therefore, connecting carbon nanotubes and quantum dots can form a composite material with high stability. Using this composite material as a light-emitting layer material can effectively improve carrier injection efficiency and enhance the lifetime and other performance characteristics of the light-emitting device.

[0063] In some embodiments, the phenylene oxide includes, but is not limited to, one of naphthylene or anthracene.

[0064] In some embodiments, L1 and L2 may be selected from, but are not limited to, single-bonded, substituted, or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - is one or more combinations of two or more, wherein m1 to m4 are each independently selected from integers from 1 to 20.

[0065] Furthermore, in some embodiments, L1 and L2 may be selected from, but are not limited to, single-bonded, substituted, or unsubstituted C1 to C2 bonds. 10 Alkylene, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 alkyne group, substituted or unsubstituted C2-C 10 Etheryl group, substituted or unsubstituted aryl group with 6 to 15 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - is one or more combinations of two or more, wherein m1 to m4 are each independently selected from integers from 1 to 10.

[0066] Furthermore, in some embodiments, L1 and L2 may be selected from, but are not limited to, single bonds, substituted or unsubstituted C1-C5 alkylene groups, substituted or unsubstituted C2-C5 alkenyl groups, substituted or unsubstituted C2-C5 ynylene groups, substituted or unsubstituted C2-C5 etheryl groups, substituted or unsubstituted aryl groups with 6-10 ring atoms, and substituted or unsubstituted -(CH2). m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - is one or more combinations of two or more, wherein m1 to m4 are each independently selected from integers from 1 to 5.

[0067] In some embodiments, R may be selected from, but is not limited to, H, D, substituted or unsubstituted C1 to C2. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups.

[0068] Furthermore, in some embodiments, R may be selected from, but is not limited to, H, D, substituted or unsubstituted C1-C5 alkyl, -CF3, substituted or unsubstituted C2-C5 alkenyl, substituted or unsubstituted C2-C5 alkynyl, substituted or unsubstituted C1-C5 alkyl carbonyl, substituted or unsubstituted C1-C5 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 10 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 15 ring atoms, substituted or unsubstituted aryloxy group having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 15 ring atoms, or combinations of these groups.

[0069] In some embodiments, in Ar, L1, L2, and R, the substituents are each independently selected from, but not limited to, -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or combinations of these groups.

[0070] Furthermore, in some embodiments, the substituents in Ar, L1, L2, and R are each independently selected from, but not limited to, -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or combinations of these groups.

[0071] As an example, in some embodiments, group A is selected from any one of the groups shown in the following structural formulas:

[0072]

[0073]

[0074] The aforementioned group A has a higher rigidity structure, which can more effectively improve the thermal stability of the quantum dot itself. At the same time, the carbon nanotubes can transfer the heat from the quantum dot during long-term operation, achieving more effective heat dissipation and preventing local overheating.

[0075] In some embodiments, each carbon nanotube is attached to one or more groups A, and each group A is attached to a quantum dot.

[0076] It is understandable that when the composite material contains multiple groups A, the groups A may be the same or different.

[0077] In some embodiments, the radial dimension of the carbon nanotube is 5–30 nm, for example, 5 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or any range between any two of these values; the axial dimension of the carbon nanotube is 5–20 μm, for example, 5 μm, 10 μm, 15 μm, 20 μm, or any range between any two of these values. When using the composite material to prepare the luminescent layer film, the axial direction of the carbon nanotube is not perpendicular to the film.

[0078] In some embodiments, the average particle size of the quantum dots is 5 to 10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and any range between any two of the stated values.

[0079] In some embodiments, the mass ratio of the quantum dots to the carbon nanotubes in the composite material is (5–30):1, for example, 5:1, 6:1, 8:1, 10:1, 12:1, 15:1, 16:1, 18:1, 20:1, 22:1, 23:1, 25:1, 26:1, 28:1, 30:1, and any range between any two of these ratios. Within this range, the thermal stability of the quantum dots can be effectively improved.

[0080] In some embodiments, the mass ratio of the group A to the carbon nanotube in the composite material is 1:(5-20), for example, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, 1:11, 1:12, 1:13, 1:14, 1:15, 1:16, 1:17, 1:18, 1:19, 1:20, and any range between any two of these ratios. Within this range, the thermal stability of the quantum dots can be effectively improved.

[0081] The quantum dot luminescent material may include, but is not limited to, one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite nanocrystals. The core-shell structure quantum dots may have one or more shells.

[0082] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may be, but are not limited to, one or more of the following: II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0083] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0084] The perovskite nanocrystals may be made of, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has the general structural formula AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0085] In some embodiments, the surface of the quantum dot further includes organic ligands, including but not limited to substituted or unsubstituted C6-C. 24 Fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24 Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C8 phosphine oxides 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 At least one of the fatty phosphites, wherein the substituent is selected from at least one of C1-C6 alkyl, C1-C6 alkoxy and halogen.

[0086] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty acids include at least one of the following: decanoic acid, undecenoic acid, tetradecanoic acid, oleic acid, linoleic acid, and stearic acid.

[0087] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic thiols include at least one of octylthiol, dodecylthiol, and octadecylthiol.

[0088] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty amines include at least one of oleylamine, octadecylamine, octylamine, dioctylamine, and trioctylamine.

[0089] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphines include trioctylphosphine.

[0090] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

[0091] Secondly, please refer to Figures 1-3 This application also provides a method for preparing a composite material, comprising the following steps:

[0092] Step S11: Provide a sulfonic acid solution including sulfonic acid and a first solvent and a carbon nanotube dispersion including carbon nanotubes and a second solvent, wherein the carbon nanotubes have carboxyl groups attached to their surfaces. Mix the first compound solution and the carbon nanotube dispersion and perform a first heat treatment to obtain a reaction solution.

[0093] Step S12: Provide a quantum dot dispersion comprising quantum dots and a first solvent, mix the quantum dot dispersion with the reaction liquid, and perform a second heat treatment to obtain a composite material.

[0094] In the preparation method described in this application, during the first heat treatment, the first compound undergoes a dehydration condensation reaction between the amino groups in its molecule and the carboxyl groups on the surface of the carbon nanotubes to form an intermediate material (see reference). Figure 3 During the second heat treatment, because the sulfonic acid groups in the first compound have relatively high electronegativity, they can bond with metal cations exposed on the surface of the quantum dots, passivating some defects on the surface of the quantum dots and forming the composite material described above.

[0095] The carbon nanotubes, the quantum dots, and the first solvent are described above and will not be repeated here.

[0096] The first solvent and the second solvent are each independently including, but not limited to, one or more of dimethyl sulfoxide (DMSO), ethanol, isopropanol, butanol, n-pentanol, isoamyl alcohol, N,N-dimethylacetamide (DMF), N-methylformamide (NMF), and propylene carbonate (PC).

[0097] The first compound has the structural formula shown in formula (I):

[0098]

[0099] Ar, R, L1, and L2 are described above and will not be repeated here.

[0100] As an example, in some embodiments, the first compound includes, but is not limited to, 6-amino-1-naphthalenesulfonic acid (CAS: 81-05-0), 6-amino-4-hydroxy-2-naphthalenesulfonic acid (CAS: 90-51-7), 5-amino-1-hydroxy-2-naphthalenesulfonic acid (CAS: 58596-07-9), 8-amino-1-naphthalenesulfonic acid (CAS: 82-75-7), 8-p-tolueneamino-1-naphthalenesulfonic acid (CAS: 129-90-8), and 8-aniline-1-naphthalenesulfonic acid (CAS: 82-76-8). ), 2-naphthylamine-6-sulfonic acid (CAS: 93-00-5), p-aminonaphthalenesulfonic acid (CAS: 84-86-6), 2-naphthylamine-1-sulfonic acid (CAS: 81-16-3), 7-methylamino-4-hydroxy-2-naphthalenesulfonic acid (CAS: 22346-43-6), 4-hydroxy-6-(phenylamino)-1-naphthalenesulfonic acid (CAS: 5345-77-7), 2-amino-5-(aminomethyl)-1-naphthalenesulfonic acid (CAS: 52084-84-1), 5-aminonaphthalene-2-sulfonic acid (CA S: 119-79-9), 5-amino-1-naphthalenesulfonic acid (CAS: 84-89-9), 4-amino-3-hydroxy-1-naphthalenesulfonic acid (CAS: 567-13-5), 4-hydroxy-6-methylamino-2-naphthalenesulfonic acid (CAS: 6259-53-6), 1-amino-2-naphthol-4-sulfonic acid (CAS: 116-63-2), 4-hydroxy-7-anilinenaphthalene-2-sulfonic acid (CAS: 119-40-4), 8-amino-1-naphthol-5-sulfonic acid (CAS: 83-64-7) One or more of the following: 5-amino-1-naphthol-3-sulfonic acid (CAS: 489-78-1), 7-amino-1,3-naphthalenedisulfonic acid (CAS: 86-65-7), 2-(methylamino)naphthalenesulfonic acid (CAS: 7089-63-6), 1-naphthylamine-7-sulfonic acid (CAS: 119-28-8), 2-naphthylamine-4,8-disulfonic acid (CAS: 131-27-1), 2-amino-8-naphthol-6-sulfonic acid (CAS: 90-51-7), and 1-amino-2-naphthol-6-sulfonic acid.

[0101] The chemical structural formula of the 6-amino-1-naphthalenesulfonic acid is as follows:

[0102]

[0103] The chemical structural formula of the 6-amino-4-hydroxy-2-naphthalenesulfonic acid is as follows:

[0104]

[0105] The chemical structural formula of the 5-amino-1-hydroxy-2-naphthalenesulfonic acid is as follows:

[0106]

[0107] The chemical structural formula of the 8-amino-1-naphthalenesulfonic acid is as follows:

[0108]

[0109] The chemical structural formula of the 8-p-tolueneamino-1-naphthalenesulfonic acid is as follows:

[0110]

[0111] The chemical structural formula of the 8-aniline-1-naphthalenesulfonic acid is as follows:

[0112]

[0113] The chemical structural formula of the 2-naphthylamine-6-sulfonic acid is as follows:

[0114]

[0115] The chemical structural formula of the p-aminonaphthalenesulfonic acid is as follows:

[0116]

[0117] The chemical structural formula of the 2-naphthylamine-1-sulfonic acid is as follows:

[0118]

[0119] The chemical structural formula of the 7-methylamino-4-hydroxy-2-naphthalenesulfonic acid is as follows:

[0120]

[0121] The chemical structural formula of the 4-hydroxy-6-(phenylamino)-1-naphthalenesulfonic acid is as follows:

[0122]

[0123] The chemical structural formula of the 2-amino-5-(aminomethyl)-1-naphthalenesulfonic acid is as follows:

[0124]

[0125] The chemical structural formula of the 5-aminonaphthalene-2-sulfonic acid is as follows:

[0126]

[0127] The chemical structural formula of the 5-amino-1-naphthalenesulfonic acid is as follows:

[0128]

[0129] The chemical structural formula of the 4-amino-3-hydroxy-1-naphthalenesulfonic acid is as follows:

[0130]

[0131] The chemical structural formula of the 4-hydroxy-6-methylamino-2-naphthalenesulfonic acid is as follows:

[0132]

[0133] The chemical structural formula of the 1-amino-2-naphthol-4-sulfonic acid is as follows:

[0134]

[0135] The chemical structural formula of the 4-hydroxy-7-anilinenaphthalene-2-sulfonic acid is as follows:

[0136]

[0137] The chemical structural formula of the 8-amino-1-naphthol-5-sulfonic acid is as follows:

[0138]

[0139] The chemical structural formula of the 5-amino-1-naphthol-3-sulfonic acid is as follows:

[0140]

[0141] The chemical structural formula of the 7-amino-1,3-naphthalenedisulfonic acid is as follows:

[0142]

[0143] The chemical structural formula of the 2-(methylamino)naphthalenesulfonic acid is as follows:

[0144]

[0145] The chemical structural formula of the 1-naphthylamine-7-sulfonic acid is as follows:

[0146]

[0147] The chemical structural formula of the 2-naphthylamine-4,8-disulfonic acid is as follows:

[0148]

[0149] The chemical structural formula of the 2-amino-8-naphthol-6-sulfonic acid is as follows:

[0150]

[0151] The chemical structural formula of the 1-amino-2-naphthol-6-sulfonic acid is as follows:

[0152]

[0153] In some embodiments, the concentration of the first compound in the first compound solution is 5 to 20 mg / mL, for example, 5 mg / mL, 10 mg / mL, 15 mg / mL, 20 mg / mL, and any range between two of the stated values.

[0154] In some embodiments, the concentration of carbon nanotubes in the carbon nanotube dispersion is 5 to 10 mg / mL, for example, 5 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, and any range between any two of the stated values.

[0155] In some embodiments, the concentration of the quantum dots in the quantum dot dispersion is 20–50 mg / mL, for example, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, and any range between any two of the stated values.

[0156] In some embodiments, the mass ratio of the first compound to the carbon nanotube is 1:(1 to 5), for example, 1:1, 1:2, 1:3, 1:4, 1:5, and the range between any two of the ratios.

[0157] In some embodiments, the mass ratio of the quantum dots to the carbon nanotubes is (5–40):1, for example, 5:1, 6:1, 8:1, 10:1, 12:1, 15:1, 16:1, 18:1, 20:1, 22:1, 23:1, 25:1, 26:1, 28:1, 30:1, 32:1, 33:1, 35:1, 36:1, 38:1, 40:1, and the range between any two of the stated ratios.

[0158] In some embodiments, the temperature of the first heat treatment is 130–180°C, for example, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, or any range between any two of these values; the time of the first heat treatment is 60–180 min, for example, 60 min, 80 min, 100 min, 120 min, 130 min, 150 min, 160 min, 180 min, or any range between any two of these values. Within this temperature and time range, it is beneficial for the sulfonic acid to react fully with the carbon nanotubes.

[0159] In some embodiments, the temperature of the second heat treatment is 80–100°C, such as 80°C, 85°C, 90°C, 95°C, 100°C, or any range between any two of these values; the time of the second heat treatment is 30–90 min, such as 30 min, 40 min, 50 min, 60 min, 70 min, 80 min, 90 min, or any range between any two of these values. Within this temperature and time range, a rapid and efficient reaction between the intermediate and the quantum dots is beneficial, and it is advantageous to prepare a composite material with high thermal stability.

[0160] In some embodiments, the process further includes washing the composite material after the second heat treatment and dissolving the washed composite material in a first solvent. Thus, the composition can be obtained.

[0161] Understandably, the washing method can be a known washing method used for quantum dot preparation, for example, adding a precipitant to the solution containing the composite material in the reaction for precipitation, centrifugation, and redispersion.

[0162] Thirdly, this application also provides a composition comprising the composite material described above and a third solvent.

[0163] The third solvent includes, but is not limited to, one or more of the following: n-octane, isooctane, n-hexane, cyclohexane, ethyl acetate, benzene, toluene, chloroform, carbon tetrachloride, dichloromethane, dimethyl ether, and tetraethylene glycol dimethyl ether.

[0164] In some embodiments, the concentration of the composite material in the composition is 20–60 mg / mL, for example, 520 mg / mL, 21 mg / mL, 22 mg / mL, 23 mg / mL, 24 mg / mL, 25 mg / mL, 26 mg / mL, 27 mg / mL, 28 mg / mL, 29 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, 55 mg / mL, 60 mg / mL, and the range between any two of the stated values.

[0165] Fourthly, embodiments of this application also provide a thin film, wherein the thin film includes the composite material, or the thin film is prepared from the composition by a film-forming process.

[0166] Fifthly, referring to section 4, this application provides a light-emitting device 100, comprising an anode 10, a light-emitting layer 20, and a cathode 30 stacked sequentially. The light-emitting layer 20 may comprise the composite material described above, or the light-emitting layer 20 may be prepared from the composition described above through a film-forming process, or the light-emitting layer 20 may be a thin film as described above.

[0167] In some embodiments, the light-emitting device 100 further includes an electron transport layer 40 located between the light-emitting layer 20 and the cathode 30.

[0168] In some embodiments, the light-emitting device 100 further includes a hole transport layer 50 located between the anode 10 and the light-emitting layer 20.

[0169] In some embodiments, the light-emitting device 100 further includes a hole injection layer 60 located between the anode 10 and the hole transport layer 50.

[0170] The anode 10 and the cathode 30 are anodes and cathodes known in the art for use in light-emitting devices. For example, they can be independently, but are not limited to, doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode can be, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO). The composite electrode is a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxide particles, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

[0171] The material of the electron transport layer 40 is a material known in the art for use in electron transport layers, such as one or more selected from, but not limited to, inorganic and organic electron transport materials. The inorganic electron transport material includes, but is not limited to, one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particles includes, but is not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS.The organic electron transport materials include, but are not limited to, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris((3-pyridyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (Bebq2) (CAS: 148896-39-3), and 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-tris(4-biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-tris(4-triphenyl ... Azazole (TAZ), 2,7-bis(diphenylphosphine)-9,9'-spirobis[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI), 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4 ,7-Diphenyl-1,10-o-phenanthroline, 4,7-Diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum (Alq3), 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2 One or more of the following: 7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile))(CNT2T), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (POT2T, CAS No.: 1646906-26-4).

[0172] The material of the hole transport layer 50 can also be any material known in the art for hole transport layers, such as, but not limited to, one or more of inorganic hole transport materials and organic hole transport materials. The inorganic hole transport material includes, but is not limited to, one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, p-type gallium nitride.The organic hole transport materials include, but are not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD), N,N'- Bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))](TFB), poly(N-vinylcarbazole)(PVK) ) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-omeT) AD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, and one or more of C60.

[0173] The material of the hole injection layer 60 can be any material known in the art for hole injection layers, such as, but not limited to, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzphenanthrene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinone dimethyl ether (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0174] In some embodiments, the thickness of the anode 10 is 10–200 nm; the thickness of the light-emitting layer 20 is 50–100 nm; the thickness of the cathode 30 is 30–100 nm; the thickness of the electron transport layer 40 is 20–60 nm; the thickness of the hole transport layer 50 is 20–100 nm; and the thickness of the hole injection layer 60 is 20–100 nm.

[0175] It is understood that the light-emitting device 100 may also be provided with some functional layers that are conventionally used in light-emitting devices and help to improve the performance of the light-emitting device, such as electron blocking layer, hole blocking layer, electron injection layer, interface modification layer, etc.

[0176] It is understood that the materials of each layer of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0177] In some embodiments, the light-emitting device 100 further includes a substrate disposed on the side of the anode 10 away from the light-emitting layer 20, or the substrate disposed on the side of the cathode 30 away from the light-emitting layer 20.

[0178] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0179] It is understood that the light-emitting device 100 can be a normally positioned light-emitting device or an inverted light-emitting device. The light-emitting device 100 can be a quantum dot light-emitting device or an organic light-emitting device.

[0180] Sixthly, embodiments of this application also provide a display device, the display device including the light-emitting device 100.

[0181] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0182] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0183] Thin Film Example 1

[0184] Step 1: Take 6-amino-1-naphthalenesulfonic acid solution (concentration 10 mg / mL, solvent DMSO) and 8 mg / mL carbon nanotube dispersion (concentration 8 mg / mL, solvent DMSO, carbon nanotubes are modified with carboxyl groups) and mix them together. Stir evenly and then perform a first heat treatment at 150℃ for 2 h to obtain the reaction solution.

[0185] Step 2: Mix the green quantum dot CdZnSeS solution (concentration 20 mg / mL, solvent n-octane) with the reaction solution, and perform a second heat treatment at 90°C for 1 h. Then, take the reaction solution and mix it with ethyl acetate and n-hexane, and centrifuge. Repeat the process three times, and take the lower precipitate to obtain the composite material. Then, dissolve the composite material in n-octane to prepare a composition of 20 mg / mL.

[0186] Step 3: Deposit the composition onto a substrate and anneal at 120°C for 10 min to obtain a thin film with a thickness of 60 nm.

[0187] The film in this embodiment includes a composite material, which includes quantum dots, carbon nanotubes and group A, wherein the mass ratio of quantum dots to carbon nanotubes is 20:1 and the mass ratio of group A to carbon nanotubes is 1:10.

[0188] In this embodiment, the structural formula of group A is the structural formula shown in formula (A-1).

[0189] Thin Film Example 2

[0190] This embodiment is basically the same as thin film embodiment 1, except that the mass ratio of quantum dots to carbon nanotubes in the composite material of this embodiment is 5:1.

[0191] Thin Film Example 3

[0192] This embodiment is basically the same as thin film embodiment 1, except that the mass ratio of quantum dots to carbon nanotubes in the composite material of this embodiment is 30:1.

[0193] Thin Film Example 4

[0194] This embodiment is basically the same as thin film embodiment 1, except that in the composite material of this embodiment, the mass ratio of group A to carbon nanotubes is 1:5.

[0195] Thin Film Example 5

[0196] This embodiment is basically the same as thin film embodiment 1, except that in the composite material of this embodiment, the mass ratio of group A to carbon nanotubes is 1:20.

[0197] Thin Film Example 6

[0198] This embodiment is basically the same as thin film embodiment 1, except that the temperature of the first heat treatment in this embodiment is 130°C.

[0199] Thin Film Example 7

[0200] This embodiment is basically the same as thin film embodiment 1, except that the temperature of the first heat treatment in this embodiment is 180°C.

[0201] Thin Film Example 8

[0202] This embodiment is basically the same as thin film embodiment 1, except that the temperature of the second heat treatment in this embodiment is 80°C.

[0203] Thin Film Example 9

[0204] This embodiment is basically the same as thin film embodiment 1, except that the temperature of the second heat treatment in this embodiment is 100°C.

[0205] Thin Film Example 10

[0206] This embodiment is basically the same as film embodiment 1, except that 8-amino-1-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0207] In this embodiment, the structural formula of group A is shown in formula (A-4).

[0208] Thin Film Example 11

[0209] This embodiment is basically the same as film embodiment 1, except that 5-amino-1-hydroxy-2-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0210] In this embodiment, the structural formula of group A is shown in formula (A-3).

[0211] Thin Film Example 12

[0212] This embodiment is basically the same as film embodiment 1, except that 8-p-tolueneamino-1-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0213] In this embodiment, the structural formula of group A is shown in formula (A-5).

[0214] Thin Film Example 13

[0215] This embodiment is basically the same as film embodiment 1, except that 8-aniline-1-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0216] In this embodiment, the structural formula of group A is shown in formula (A-6).

[0217] Thin Film Example 14

[0218] This embodiment is basically the same as film embodiment 1, except that 7-methylamino-4-hydroxy-2-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0219] In this embodiment, the structural formula of group A is the structural formula shown in formula (A-10).

[0220] Thin Film Example 15

[0221] This embodiment is basically the same as film embodiment 1, except that 2-amino-5-(aminomethyl)-1-naphthalenesulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in film embodiment 1.

[0222] In this embodiment, the structural formula of group A is shown in formula (A-12).

[0223] Thin Film Example 16

[0224] This embodiment is basically the same as thin film embodiment 1, except that 4-hydroxy-7-anilinenaphthalene-2-sulfonic acid is used to replace 6-amino-1-naphthalenesulfonic acid in embodiment 1.

[0225] In this embodiment, the structural formula of group A is shown in formula (A-18).

[0226] Thin Film Example 17

[0227] This embodiment is basically the same as thin film embodiment 1, except that blue quantum dots CdZnS are used in this embodiment to replace green quantum dots CdZnSeS in thin film embodiment 1.

[0228] Thin Film Comparative Example 1

[0229] This comparative example is basically the same as that of Thin Film Example 1, except that the composition of this comparative example is the green quantum dot CdZnSeS solution of Thin Film Example 1.

[0230] Thin Film Comparative Example 2

[0231] This comparative example is basically the same as that of thin film example 1, except that the composition of this comparative example includes quantum dots, carbon nanotubes and n-octane solvent, and the mass ratio of quantum dots to carbon nanotubes is 10:1.

[0232] Thin film comparative example 3

[0233] This comparative example is basically the same as that of thin film example 1, except that the composition of this comparative example includes quantum dots, 6-amino-1-naphthalenesulfonic acid ligands attached to the surface of the quantum dots and n-octane solvent, and the mass ratio of quantum dots to 6-amino-1-naphthalenesulfonic acid is 20:0.1.

[0234] The films of thin film Examples 1-17 and Thin Film Comparative Examples 1-3 were subjected to initial fluorescence quantum yield (PLQY) and stability tests, respectively. The test results are shown in Table 1.

[0235] The initial fluorescence quantum yield (PLQY) was tested using a steady-state fluorescence spectrometer from Edinburgh Instruments, model FS5, with the SC-30 accessory for measuring the fluorescence quantum yield.

[0236] The stability test method is as follows: test the initial PLQY of the prepared film, then anneal at 100°C for 2 hours, and then test PLQY'. The PLQY stability value of the film can be obtained by dividing PLQY' by the initial PLQY.

[0237] Table 1:

[0238]

[0239]

[0240] As shown in Table 1:

[0241] Compared to the films of Comparative Examples 1-3, the films of Examples 1-17 exhibit higher stability. This demonstrates that the films prepared using the composite material described in this application possess higher stability. The reason for this may be that in the composite material, group A, through its sulfonate group O... -Bonding to exposed metal ions on the surface of quantum dots can fill anionic defects on the surface of quantum dots, thereby stably and effectively passivating the defects on the surface of quantum dots and thus improving the stability of quantum dots; in the composite material, the quantum dots and carbon nanotubes are connected together to form a whole through the group A, and the introduction of the high rigidity structure of the group A improves the thermal stability of the quantum dots themselves.

[0242] Device Example 1

[0243] Provide an ITO anode glass substrate, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove visible impurities, then ultrasonically clean it with deionized water, acetone, ethanol, and isopropanol for 15 minutes, and then dry it with nitrogen gas for later use.

[0244] PEDOT:PSS material was spin-coated onto the anode and annealed at 150°C for 15 min to obtain a hole injection layer with a thickness of 40 nm.

[0245] TFB material was spin-coated onto the hole injection layer and annealed at 150°C for 15 min to obtain a hole transport layer with a thickness of 40 nm.

[0246] A thin film with a thickness of 60 nm was prepared on the hole transport layer using the preparation method of Thin Film Example 1.

[0247] An ethanol solution of ZnO was spin-coated onto the light-emitting layer and annealed at 180°C for 15 min to obtain an electron transport layer with a thickness of 40 nm.

[0248] In a vacuum coating machine, thermal evaporation is performed at a vacuum level of 4×10⁻⁶. -6 mbar, Mg is vapor-deposited to form a Mg layer with a thickness of 20nm; then Ag is vapor-deposited on the Mg layer to form an Ag layer with a thickness of 30nm, thus obtaining the cathode;

[0249] Encapsulation yields a light-emitting device.

[0250] Device Examples 2-17

[0251] Device Examples 2 to 17 are basically the same as Device Example 1, except that the light-emitting layer of Device Examples 2 to 17 is prepared using the same preparation method as that of Thin Film Examples 2 to 17.

[0252] Device Comparison Examples 1-3

[0253] The devices in Comparative Examples 1 to 3 are basically the same as those in Device Example 1, except that the light-emitting layers in Comparative Examples 1 to 3 are prepared using the same methods as those in Comparative Examples 1 to 3.

[0254] The lifetime T95 and lifetime T95@1000nit of the light-emitting devices of Device Examples 1-17 and Device Comparative Examples 1-3 were tested. The test results are shown in Table 2.

[0255] The lifetime T95 and lifetime T95@1000nit test methods are as follows: In CDA gas, under a constant current of 2mA, the time it takes for the device brightness to decay to a certain percentage of its maximum brightness is measured. The time for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is as follows:

[0256]

[0257] Among them, T95 L The lifespan at low brightness is typically taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L Typically 1000 nits, A is the acceleration factor, taken as 1.7. EQE and lifetime testing conditions: conducted at room temperature with 50% humidity.

[0258] Table 2:

[0259]

[0260]

[0261] As shown in Table 2:

[0262] Compared to the light-emitting devices in Comparative Examples 1 to 3, the light-emitting devices in Examples 1 to 17 have a longer lifespan. It is evident that using the composite material described in this application to prepare the light-emitting layer of the light-emitting device can effectively improve the lifespan of the light-emitting device. The reason may be that the composite material described in this application has high stability.

[0263] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composite material, characterized in that, It includes quantum dots and carbon nanotubes, wherein the quantum dots and the carbon nanotubes are connected by group A as shown in the following structural formula: Wherein, Ar is a substituted or unsubstituted phenylene; L1 and L2 are linking groups, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20; R is selected from H, D, and substituted or unsubstituted C1-C1. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; Ar, L1, L2, and R, wherein each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

2. The composite material as described in claim 1, characterized in that, It also includes at least one of the following features (1) to (8): (1) The phenylene oxide includes one of naphthylene and anthraceneylene; (2) L1 and L2 are selected from single-bonded, substituted, or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20; (3) L1 and L2 are selected from single-bonded, substituted, or unsubstituted C1 to C2 bonds. 10 Alkylene, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 alkyne group, substituted or unsubstituted C2-C 10 Etheryl group, substituted or unsubstituted aryl group with 6 to 15 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 10; (4) L1 and L2 are selected from single bonds, substituted or unsubstituted C1-C5 alkylene groups, substituted or unsubstituted C2-C5 alkenyl groups, substituted or unsubstituted C2-C5 alkyne groups, substituted or unsubstituted C2-C5 etheryl groups, substituted or unsubstituted aryl groups with 6-10 ring atoms, and substituted or unsubstituted -(CH2). m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 5; (5) R is selected from H, D, substituted or unsubstituted C1-C1. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups; (6) R is selected from H, D, substituted or unsubstituted C1-C5 alkyl, -CF3, substituted or unsubstituted C2-C5 alkenyl, substituted or unsubstituted C2-C5 alkynyl, substituted or unsubstituted C1-C5 alkyl carbonyl, substituted or unsubstituted C1-C5 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 10 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 15 ring atoms, substituted or unsubstituted aryloxy group having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 15 ring atoms, or combinations of these groups; (7) Among Ar, L1, L2, and R, the substituents are each independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or combinations of these groups; (8) In Ar, L1, L2, and R, each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or a combination of these groups.

3. The composite material according to any one of claims 1 to 2, characterized in that, The group A is selected from any one of the groups shown in the following structural formulas:

4. The composite material according to any one of claims 1, characterized in that, The group A is passed through O - Bonded to metal ions on the surface of quantum dots; and / or The group A is connected to the carbon nanotube via a linking site; and / or Each carbon nanotube is attached to one or more groups A, and each group A is connected to a quantum dot; and / or The carbon nanotubes have a radial dimension of 5–30 nm and an axial dimension of 5–20 μm; and / or In the composite material, the mass ratio of the quantum dots to the carbon nanotubes is (5-30):1; and / or In the composite material, the mass ratio of group A to the carbon nanotube is 1:(5-20); and / or The average particle size of the quantum dots is 5–10 nm; and / or The quantum dots include one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite nanocrystals. The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, and ZnSTe. One or more of the following compounds: HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the IV-VI group compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, and Pb SeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and GaAl One or more of the following compounds are selected: NAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the group I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2; the perovskite nanocrystals include doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors, wherein the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

5. A method for preparing a composite material, characterized in that, Includes the following steps: A first compound solution comprising a first compound and a first solvent and a carbon nanotube dispersion comprising carbon nanotubes and a second solvent are provided, wherein the carbon nanotubes have carboxyl groups attached to their surfaces. The first compound solution and the carbon nanotube dispersion are mixed and subjected to a first heat treatment to obtain a reaction solution. A quantum dot dispersion comprising quantum dots and a first solvent is provided; the quantum dot dispersion is mixed with the reaction solution and subjected to a second heat treatment to obtain a composite material. The first compound has the structural formula shown in formula (I): Wherein, Ar is a substituted or unsubstituted phenylene; L1 and L2 are linking groups, selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20; R is selected from H, D, and substituted or unsubstituted C1-C1. 20 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne group, substituted or unsubstituted C1-C 20 Alkyl carbonyl, substituted or unsubstituted C1-C 20 Alkoxycarbonyl, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; Ar, L1, L2, and R, wherein each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

6. The preparation method according to claim 5, characterized in that, It also includes at least one of the following features (1) to (8): (1) The phenylene oxide includes one of naphthylene and anthraceneylene; (2) L1 and L2 are selected from single-bonded, substituted, or unsubstituted C1 to C2 bonds. 20 Alkylene, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkyne group, substituted or unsubstituted C2-C 20 Etheryl group, substituted or unsubstituted aryl group with 6 to 20 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 20; (3) L1 and L2 are selected from single-bonded, substituted, or unsubstituted C1 to C2 bonds. 10 Alkylene, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 alkyne group, substituted or unsubstituted C2-C 10 Etheryl group, substituted or unsubstituted aryl group with 6 to 15 ring atoms, substituted or unsubstituted -(CH2) group. m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 10; (4) L1 and L2 are selected from single bonds, substituted or unsubstituted C1-C5 alkylene groups, substituted or unsubstituted C2-C5 alkenyl groups, substituted or unsubstituted C2-C5 alkyne groups, substituted or unsubstituted C2-C5 etheryl groups, substituted or unsubstituted aryl groups with 6-10 ring atoms, and substituted or unsubstituted -(CH2). m1 CO(CH2) m2 -, substituted or unsubstituted -(CH2) m3 COO(CH2) m4 - One or more combinations of the following, wherein m1 to m4 are each independently selected from integers from 1 to 5; (5) R is selected from H, D, substituted or unsubstituted C1-C1. 10 Alkyl, substituted or unsubstituted silyl, -CF3, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne group, substituted or unsubstituted C1-C 10 Alkyl carbonyl, substituted or unsubstituted C1-C 10 Alkoxycarbonyl, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups; (6) R is selected from H, D, substituted or unsubstituted C1-C5 alkyl, -CF3, substituted or unsubstituted C2-C5 alkenyl, substituted or unsubstituted C2-C5 alkynyl, substituted or unsubstituted C1-C5 alkyl carbonyl, substituted or unsubstituted C1-C5 alkoxy carbonyl, substituted or unsubstituted aromatic group having 6 to 10 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 15 ring atoms, substituted or unsubstituted aryloxy group having 6 to 15 ring atoms, substituted or unsubstituted heteroaryloxy group having 5 to 15 ring atoms, or combinations of these groups; (7) Among Ar, L1, L2, and R, the substituents are each independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or combinations of these groups; (8) In Ar, L1, L2, and R, each of the substituents is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or a combination of these groups.

7. The preparation method according to claim 5, characterized in that, The first compound includes 6-amino-1-naphthalenesulfonic acid, 6-amino-4-hydroxy-2-naphthalenesulfonic acid, 5-amino-1-hydroxy-2-naphthalenesulfonic acid, 8-amino-1-naphthalenesulfonic acid, 8-p-toluamino-1-naphthalenesulfonic acid, 8-aniline-1-naphthalenesulfonic acid, 2-naphthylamine-6-sulfonic acid, p-aminonaphthalenesulfonic acid, 2-naphthylamine-1-sulfonic acid, 7-methylamino-4-hydroxy-2-naphthalenesulfonic acid, 4-hydroxy-6-(phenylamino)-1-naphthalenesulfonic acid, 2-amino-5-(aminomethyl)-1-naphthalenesulfonic acid, 5-aminonaphthalene-2-sulfonic acid, 5-amino One or more of the following: 1-naphthalenesulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 4-hydroxy-6-methylamino-2-naphthalenesulfonic acid, 1-amino-2-naphthol-4-sulfonic acid, 4-hydroxy-7-anilinenaphthalene-2-sulfonic acid, 8-amino-1-naphthol-5-sulfonic acid, 5-amino-1-naphthol-3-sulfonic acid, 7-amino-1,3-naphthalenedisulfonic acid, 2-(methylamino)naphthalenesulfonic acid, 1-naphthylamine-7-sulfonic acid, 2-naphthylamine-4,8-disulfonic acid, 2-amino-8-naphthol-6-sulfonic acid, and 1-amino-2-naphthol-6-sulfonic acid; The first solvent and the second solvent each independently include one or more of dimethyl sulfoxide, ethanol, isopropanol, butanol, n-pentanol, isoamyl alcohol, N,N-dimethylacetamide, N-methylformamide, and propylene carbonate.

8. The preparation method according to claim 5, characterized in that, The temperature of the first heat treatment is 130–180°C; and / or The first heat treatment time is 60–180 min; and / or The temperature of the second heat treatment is 80–100°C; and / or The second heat treatment time is 30–90 min; and / or In the solution of the first compound, the concentration of the first compound is 5–20 mg / mL; and / or In the carbon nanotube dispersion, the concentration of the carbon nanotubes is 5–10 mg / mL; and / or In the quantum dot dispersion, the concentration of the quantum dots is 20–50 mg / mL; and / or The mass ratio of the first compound to the carbon nanotubes is 1:(1-5); and / or The mass ratio of the quantum dots to the carbon nanotubes is (5-40):

1.

9. A thin film, characterized in that, The film comprises the composite material according to any one of claims 1 to 4, or the film comprises the composite material prepared by the preparation method according to any one of claims 5 to 8.

10. A light-emitting device, characterized in that, It comprises an anode, a light-emitting layer, and a cathode stacked sequentially, wherein the light-emitting layer comprises the composite material according to any one of claims 1 to 4, or the light-emitting layer comprises the composite material prepared by the preparation method according to any one of claims 5 to 8, or the light-emitting layer is the thin film according to claim 9.

11. The light-emitting device as claimed in claim 10, characterized in that, The anode and the cathode each independently comprise a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The doped metal oxide particle electrode is made of one or more of the following materials: indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode comprises one or more of the following: AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The metal element electrode is made of one or more of the following: Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The light-emitting device further includes an electron transport layer located between the light-emitting layer and the cathode. The electron transport layer is made of one or more inorganic and organic electron transport materials. The inorganic electron transport material includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first undoped metal oxide particle is made of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The first doped metal oxide particle... The metal oxide in the particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3; the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.The organic electron transport materials include diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, 1,3,5-tris((3-pyridyl)-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, and 2,7-bis(diphenylphosphine)-9 9'-spirobis[fluorene], 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridylphenyl)-2-methylpyrimidine 4,7-diphenyl-1,10-phenanthroline, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-diazaphenanthroline, 4,7- Diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum, 2,7-bis(diphenylphosphine oxide)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]- One or more of the following: alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene, 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole; and / or; The light-emitting device further includes a hole transport layer located between the anode and the light-emitting layer. The material of the hole transport layer includes one or more of inorganic hole transport materials and organic hole transport materials. The inorganic hole transport material includes one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes p-type gallium nitride.The organic hole transport material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine), N,N'-bis(3-methylphenyl)-biphenyl-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine), N,N'-bis(3-methylphenyl)biphenyl- ... 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'- Bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiroNPB, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexyldi[N,N-di(4-] [Methylphenyl)aniline], 1,3-bis(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, and one or more of C60; The light-emitting device further includes a hole injection layer located between the anode and the light-emitting layer. The material of the hole injection layer includes one or more of the following: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

12. A display device, characterized in that, Includes the light-emitting device according to any one of claims 10 to 11.

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