A method of thin film deposition

Abstract

This application discloses a thin film deposition method, relating to the field of coating processes. The thin film deposition method includes: placing a wafer substrate on the stage surface within the process chamber of a coating apparatus; placing a target material and a main source in a fixed position within the process chamber; bombarding the target material with a first ion beam emitted from the main source to form sputtered particles; and forming a deposited thin film on the surface of the wafer substrate based on the sputtered particles; wherein, during the deposition of the thin film on the wafer substrate surface, the position of the wafer substrate is adjusted to form deposited thin films of different thicknesses on the wafer substrate surface. This application can also adjust the composition of the deposited thin film in the thickness direction by adjusting the gas flow rate of the auxiliary source. The technical solution of this application can prepare thin films of different thicknesses and compositional variations on the same wafer substrate using the same process flow.

Description

Technical Field

[0001] This application relates to the field of coating processes, and more particularly to a thin film deposition method. Background Technology

[0002] With the rapid development of science and technology and the increasing diversification of daily life needs, the application of thin films demands higher performance, flexibility, and miniaturization. Functional thin film materials, as an important branch of modern materials science, refer to thin film materials with thicknesses ranging from nanometers to micrometers, used to improve or endow a substrate with specific functions. Generally speaking, functional thin films utilize their electrical, magnetic, optical, and thermal properties to exhibit special electrical, electronic, optical, optoelectronic, thermal, chemical (catalytic), biological, and piezoelectric physical properties through interaction with the substrate.

[0003] Variations in the thickness of functional thin films significantly impact certain properties, such as stress, refractive index, and extinction coefficient. Traditional fabrication methods require multiple fabrications of varying thicknesses on different substrates to study the effect of thickness on functional film performance, wasting considerable time and resources. Furthermore, due to batch-to-batch fabrication, process errors may exist between different batches of functional thin films. Summary of the Invention

[0004] In view of the above problems, this application provides a thin film deposition method to achieve the simultaneous fabrication of thin films of different thicknesses on the same wafer substrate surface. The specific solution is as follows:

[0005] A thin film deposition method, comprising:

[0006] The wafer substrate is placed on the stage surface in the process chamber of the coating equipment; the process chamber contains a target material and a main source material that are fixed in position.

[0007] The first ion beam emitted from the main source bombards the target material to form sputtered particles, and a deposited thin film is formed on the surface of the wafer substrate based on the sputtered particles; wherein, during the process of forming the deposited thin film on the surface of the wafer substrate, the position of the wafer substrate is adjusted so that the deposited thin film on the surface of the wafer substrate has a different thickness.

[0008] Optionally, in the above thin film deposition method, the process chamber also has an auxiliary source with a fixed position; the auxiliary source can emit a second ion beam, which can react with sputtered particles to form deposited particles, so as to form a deposited thin film on the surface of the wafer substrate through the deposited particles.

[0009] Optionally, in the above thin film deposition method, the wafer substrate can rotate on the stage surface based on a first axis, the first axis being perpendicular to the stage surface; the stage can swing based on a second axis, the second axis being parallel to the stage surface.

[0010] During the process of forming a deposited thin film on the surface of a wafer substrate, the oscillation of the stage causes the plane of the wafer substrate to have an angle with the plane of the target material.

[0011] Adjusting the position of the wafer substrate to allow for the deposition of thin films of varying thicknesses on the wafer substrate surface, including:

[0012] At least when the wafer substrate is in the first rotation position and the second rotation position, the surface of the wafer substrate is coated.

[0013] In the first rotation position, the wafer substrate has a first angle relative to the initial position; in the second rotation position, the wafer substrate has a second angle relative to the initial position, and the first angle and the second angle are different.

[0014] Optionally, in the above thin film deposition method, surface coating is performed on the wafer substrate at least when it is in a first rotational position and at a second rotational position, including:

[0015] After the wafer substrate is rotated to the first rotation position, a coating is continuously applied to the surface of the wafer substrate during a set time period while the wafer substrate is in the first rotation position.

[0016] After the wafer substrate is rotated to the second rotation position, a coating is continuously applied to the surface of the wafer substrate during a set time period while the wafer substrate is in the second rotation position.

[0017] or,

[0018] Based on the first axis, the wafer substrate is controlled to continuously rotate in the same direction, and a film is continuously deposited on the surface of the wafer substrate during the rotation process.

[0019] or,

[0020] Based on the first axis, the wafer substrate is controlled to continuously reciprocate between the first rotation position and the second rotation position, and a film is continuously deposited on the surface of the wafer substrate during the rotation process.

[0021] Optionally, in the above thin film deposition method, when the wafer substrate is continuously rotated in the same direction based on the first axis, if the plane where the wafer substrate is located has a first angle with the plane where the target is located, such that the distance between the center of the wafer substrate and the target is minimized, the thickness of the deposited film gradually decreases from the center to the surface of the wafer substrate; if the plane where the wafer substrate is located has a second angle with the plane where the target is located, such that the distance between the center of the wafer substrate and the target is maximized, the thickness of the deposited film gradually increases from the center to the surface of the wafer substrate.

[0022] Optionally, in the above thin film deposition method, during the formation of the deposited thin film on the surface of the wafer substrate, adjusting the position of the wafer substrate to achieve deposited thin films of different thicknesses on the surface of the wafer substrate includes:

[0023] At least when the stage is in the first swing position and the second swing position, the wafer substrate is coated with a surface film.

[0024] In the first swing position, the surface of the stage has a first swing angle relative to the second axis; in the second swing position, the surface of the stage has a second swing angle relative to the second axis, and the first swing angle is different from the second swing angle.

[0025] Optionally, in the above thin film deposition method, surface coating is performed on the wafer substrate at least when the stage is in the first swing position and the second swing position, including:

[0026] After the stage is swung to the first swung position, the coating is continuously applied to the surface of the wafer substrate during the set time period when the stage is in the first swung position.

[0027] After the stage is swung to the second swung position, the coating is continuously applied to the surface of the wafer substrate during the set time period when the stage is in the second swung position.

[0028] or,

[0029] Based on the second axis, the stage is controlled to continuously oscillate between the first oscillation position and the second oscillation position, and during the oscillation of the stage, a film is continuously deposited on the surface of the wafer substrate.

[0030] Optionally, in the above thin film deposition method, the rotation of the wafer based on the first axis is the rotation of the wafer substrate, and the oscillation of the stage based on the second axis is the revolution of the stage; the wafer substrate is controlled to rotate and the stage to revolve in a time-division manner, or the stage is controlled to revolve while the wafer substrate is controlled to rotate.

[0031] Optionally, in the above thin film deposition method, during the deposition of a thin film on the surface of a wafer substrate, the wafer substrate is continuously controlled to rotate, and / or the stage is continuously controlled to revolve, so that the thickness of the deposited thin film gradually decreases or gradually increases along each radial direction of the wafer substrate.

[0032] Optionally, in the above thin film deposition method, before forming the first ion beam, the following steps are further included:

[0033] A third ion beam is emitted from an auxiliary source to remove impurities and oxide layers from the surface of the wafer substrate.

[0034] Optionally, in the above thin film deposition method, the energy of the auxiliary source forming the third ion beam is less than 200 eV.

[0035] Optionally, in the above thin film deposition method, the process of depositing a thin film on the surface of a wafer substrate further includes:

[0036] The flow rate of at least one reactive gas introduced from the auxiliary source is changed to adjust the composition of the deposited film in the thickness direction of the deposited film.

[0037] By employing the above technical solution, the thin film deposition method provided in this application allows for adjusting the position of the wafer substrate within the process chamber during the deposition of a thin film on the wafer substrate surface. This adjusts the position of the wafer substrate relative to the target, enabling regions on the wafer substrate closer to the target to have a faster deposition rate and regions farther from the target to have a lower deposition rate. This allows for the formation of deposited thin films of different thicknesses on the surface of the wafer substrate. Therefore, the technical solution of this application can prepare deposited thin films of different thicknesses on the same wafer substrate using the same process flow, eliminating the need to prepare deposited thin films of different thicknesses separately on different wafer substrates, thus reducing process time and costs. Furthermore, since deposited thin films of different thicknesses can be prepared simultaneously on the same wafer substrate, these films share similar process errors, resulting in more consistent process errors across the different thicknesses.

[0038] Furthermore, this application can also adjust the composition of the deposited film in the thickness direction by adjusting the gas flow rate of the auxiliary source, thus enabling the preparation of films with different thicknesses and compositional variations on the same wafer substrate using the same process flow. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0040] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0041] Figures 1-6 This is a method for preparing thin films with gradient thickness based on photolithography grayscale exposure;

[0042] Figure 7 A process flow diagram of a thin film deposition method provided in this application embodiment;

[0043] Figure 8 This is a schematic diagram of the structure of a coating apparatus provided in an embodiment of this application;

[0044] Figure 9 This is a top view of the wafer substrate in its initial position on the stage surface.

[0045] Figure 10 This is a top view of the wafer substrate when it has been rotated to the first position by a first included angle relative to its initial position.

[0046] Figure 11 This is a top view of the wafer substrate when it has been rotated to a second position relative to its initial position by a second included angle.

[0047] Figure 12 This is a cross-sectional view of the wafer substrate in its initial position.

[0048] Figure 13 This is a cross-sectional view of the wafer substrate in the first position;

[0049] Figure 14 This is a cross-sectional view of the wafer substrate in the second position;

[0050] Figures 12-14 All are cross-sectional views of the wafer substrate along the thickness direction;

[0051] Figure 15 This is a coating effect diagram of synchronous surface coating during the continuous rotation of a wafer substrate based on a first axis.

[0052] Figure 16 This is an illustration of another coating effect during the continuous rotation of a wafer substrate based on a first axis for synchronous surface coating.

[0053] Figure 17 This is another coating effect diagram of synchronous surface coating during the continuous rotation of a wafer substrate based on a first axis.

[0054] Figure label:

[0055] 10-Wafer substrate; 11-Aluminum thin film; 12-Photoresist layer; 111-Aluminum thin film protrusion; 13-Nickel thin film; 21-Process chamber; 22-Stage; 23-Target material; 24-Main source; 25-Auxiliary source; 241-First air inlet; 251-Second air inlet; 31-First thin film; 32-Second thin film; 33-Deposited thin film. Detailed Implementation

[0056] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are equally applicable to similar technical problems.

[0057] As described in the background section, in traditional preparation methods, it is necessary to prepare films of different thicknesses multiple times on different substrates in order to study the effect of thickness on the performance of functional films, which wastes a lot of time and resources. Furthermore, since it is batch preparation, there may be errors in the process of different batches of functional films.

[0058] To solve the above problems, the best approach is to prepare deposited thin films of different thicknesses on the surface of the same wafer substrate using the same process flow.

[0059] In one approach, photolithography with grayscale exposure combined with etching deposition techniques can be used to fabricate thin films of varying thicknesses on the same wafer substrate using a multi-step process. This method of film deposition avoids the limitations of traditional methods. Figures 1-6 As shown.

[0060] refer to Figures 1-6 , Figures 1-6 This is a method for preparing thin films with gradient thickness based on photolithography grayscale exposure. The method includes:

[0061] First, such as Figure 1 As shown, a wafer substrate 10 is provided.

[0062] Then, as Figure 2 As shown, a thin film of aluminum metal 11 is deposited on the surface of the wafer substrate 10.

[0063] Furthermore, such as Figure 3 As shown, a photoresist layer 12 is coated on the surface of the aluminum thin film 11.

[0064] Furthermore, such as Figure 4 As shown, grayscale exposure is performed on photoresist layer 12.

[0065] Furthermore, such as Figure 5 As shown, the photoresist layer 12 after grayscale exposure is used to etch the aluminum film 11, thereby forming multiple aluminum film protrusions 111 of different heights based on the aluminum film.

[0066] Finally, as Figure 6 As shown, a thin film of metallic nickel 13 is deposited.

[0067] The above Figures 1-6 The method for fabricating thin films with gradient thickness surfaces, as shown, requires photolithography grayscale exposure combined with etching deposition techniques. This process is complex and costly. Therefore, a suitable thin film deposition method is needed to simplify the fabrication of thin films with gradient thicknesses, thereby reducing costs and improving efficiency.

[0068] In view of this, embodiments of this application provide a thin film deposition method, including:

[0069] A wafer substrate is placed on the stage surface within the process chamber of the coating equipment; the process chamber contains a target material, a main source, and an auxiliary source with fixed positions; the main source can emit a first ion beam with a fixed transmission direction; the auxiliary source can emit a second ion beam with a fixed transmission direction.

[0070] A first ion beam bombards a target to form sputtered particles, and a second ion beam reacts with the sputtered particles to form deposited particles, thereby forming a deposited thin film on the surface of a wafer substrate. During the deposition of the thin film on the wafer substrate surface, the position of the wafer substrate is adjusted so that the deposited thin film on the wafer substrate surface has different thicknesses.

[0071] In this embodiment, a target, a main source, and an auxiliary source are fixedly positioned within the process chamber. During the deposition of a thin film on the wafer substrate surface, adjusting the position of the wafer substrate within the process chamber can adjust the position of the wafer substrate relative to the target. This allows the area of ​​the wafer substrate near the target to have a faster deposition rate, while the area far from the target has a lower deposition rate. This enables the formation of deposition films with different thicknesses on the surface of the wafer substrate, and allows the formation of deposition films with gradient thicknesses on the same wafer substrate surface.

[0072] As described above, the technical solution of this application can prepare deposited films of different thicknesses on the same wafer substrate using the same process flow, eliminating the need to prepare deposited films of different thicknesses separately on different wafer substrates, thus reducing process time and cost. Furthermore, since deposited films of different thicknesses can be prepared simultaneously on the same wafer substrate, these films have the same process error, resulting in more consistent process errors across different thicknesses.

[0073] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0074] refer to Figure 7 and Figure 8 As shown, Figure 7 This is a process flow diagram of a thin film deposition method provided in an embodiment of this application. Figure 8 This is a schematic diagram of a coating apparatus provided in an embodiment of this application. The coating apparatus can be used to implement the thin film deposition method provided in the embodiment of this application.

[0075] like Figure 7 and Figure 8 As shown, the thin film deposition method provided in this application includes:

[0076] Step S11: Place the wafer substrate 10 on the surface of the stage 22 in the process chamber 21 of the coating equipment; the process chamber 21 contains a target material 23 and a main source 24 with fixed positions; the main source 24 can emit a first ion beam with a fixed transmission direction.

[0077] Step S12: The target 23 is bombarded by the first ion beam to form sputtered particles, and a deposited thin film is formed on the surface of the wafer substrate 10 based on the sputtered particles; wherein, during the process of depositing the thin film on the surface of the wafer substrate 10, the position of the wafer substrate 10 is adjusted so that the deposited thin film on the surface of the wafer substrate 10 has a different thickness.

[0078] During the deposition of a thin film on the surface of the wafer substrate 10, adjusting the position of the wafer substrate 10 within the process chamber 21 can adjust the position of the wafer substrate 10 relative to the target 23, so that the area of ​​the wafer substrate 10 near the target 23 can have a faster deposition rate, while the area far from the target 23 can have a lower deposition rate. This allows deposited thin films of different thicknesses to be formed on the surface of the wafer substrate 10, and deposited thin films with gradient thicknesses can be formed on the same surface of the wafer substrate 10.

[0079] As described above, the technical solution of this application embodiment can prepare deposited films of different thicknesses on the same wafer substrate 10 through the same process flow, eliminating the need to prepare deposited films of different thicknesses separately on different wafer substrates 10, thus reducing the preparation time and process cost. Furthermore, since deposited films of different thicknesses can be prepared simultaneously on the same wafer substrate 10, the deposited films of different thicknesses have the same process error, resulting in relatively consistent process errors for deposited films of different thicknesses.

[0080] In this embodiment, a thin film can be formed directly on the wafer substrate 10 based on sputtered particles. In this case, a single main source 24 can achieve the deposition of a thin film on the surface of the wafer substrate 10 through a single ion source; it can also be as follows: Figure 8 As shown, the process chamber 21 has a fixed auxiliary source 25, which emits a second ion beam. The second ion beam reacts with sputtered particles to form deposited particles, thereby forming a deposited thin film on the surface of the wafer substrate 10. Therefore, the embodiments of this application are not limited to ion beam deposition, but can also be other physical vapor deposition methods.

[0081] like Figure 8 As shown, the main source 24 has a first gas inlet 241, which provides a first gas source to the main source 24, and the main source 24 can form a first ion beam based on the first gas source. The auxiliary source 25 has a second gas inlet 251, which provides a second gas source to the auxiliary source 25, and the auxiliary source 25 can form a second ion beam based on the second gas source.

[0082] refer to Figures 9-11 , Figure 9 This is a top view of the wafer substrate in its initial position on the stage surface. Figure 10 This is a top view of the wafer substrate when it has been rotated to the first position by a first included angle relative to its initial position. Figure 11 This is a top view of the wafer substrate rotated to a second position relative to its initial position by a second included angle. The wafer substrate 10 is capable of rotating on the surface of the stage 22 based on a first axis, which is perpendicular to the surface of the stage 22. In this configuration, the wafer substrate 10 can rotate relative to the surface of the stage 22, allowing it to rotate on its own axis. As described below, the stage 22 can oscillate based on a second axis, allowing it to revolve around a central axis, which is parallel to the stage surface. During the deposition of the thin film on the wafer substrate 10, the oscillation of the stage 22 allows the plane containing the wafer substrate 10 to form an angle with the plane containing the target 23, thus ensuring that the wafer substrate 10 and the target 23 will... Figure 8The parallel rotation shown forms the included angle, so that the center and edge of the wafer substrate 10 are at different distances relative to the target 23, thereby enabling the formation of a deposition film with a thickness gradient based on the different distances during the deposition process.

[0083] The platform 22 can be circular or rectangular; the shape of the platform 22 is not limited in this embodiment. The first axis can be perpendicular to the surface of the platform 22 and pass through the center point of the platform 22. If the platform 22 is circular, the first axis is perpendicular to the circular surface of the platform 22 and passes through the center of the circular surface. If the platform 22 is rectangular, the first axis is perpendicular to the rectangular surface of the platform 22 and passes through the focal point of the diagonal of the rectangular surface.

[0084] The stage 22 can be configured to include a base and a turntable rotatable relative to the base. The turntable is used to mount and set the wafer substrate 10, and the wafer substrate 10 can rotate relative to the base via the turntable. An XY Cartesian coordinate system can be established, with the XY plane parallel to the surface of the stage 22 used to support the wafer substrate 10. After the wafer substrate 10 is placed on the surface of the stage 22, the center of the wafer substrate 10 can be set to coincide with the origin of the XY Cartesian coordinate system. In the initial position, the diameter on the wafer passing through points A1 and A2 is parallel to the X-axis. Figure 9 As shown, after the wafer substrate 10 is placed on the surface of the stage 22, the wafer substrate 10 is located in the central region of the surface of the stage 22, and the center of the wafer substrate 10 coincides with the center of the surface of the stage 22, both located at the origin of the coordinate system. During the formation of the deposited thin film on the surface of the wafer substrate 10, the position of the wafer substrate 10 is adjusted to allow deposited thin films of different thicknesses to form on the surface of the wafer substrate 10, including: at least when the wafer substrate 10 is in a position such as... Figure 10 The first rotational position shown and the position as shown Figure 11 At the second rotation position shown, surface coating is performed on the wafer substrate; wherein, at the first rotation position, the wafer substrate has a first angle relative to the initial position; at the second rotation position, the wafer substrate has a second angle relative to the initial position, and the first angle and the second angle are different.

[0085] If the wafer substrate 10 can rotate on the surface of the stage 22 based on the first axis, in the first embodiment, the above-mentioned condition applies at least when the wafer substrate 10 is in a position such as Figure 10 The first rotational position shown and the position as shown Figure 11 When the wafer substrate 10 is in the second rotation position shown, surface coating is performed on the wafer substrate 10, including: first, after rotating the wafer substrate 10 to the first rotation position, continuously performing coating on the wafer surface during a set time period while the wafer substrate 10 is in the first rotation position. This can be done... Figure 9 From the initial position shown, rotate the wafer substrate 10 clockwise by the first included angle α, so that the wafer substrate 10 is in the position shown. Figure 10 The first position is shown. Then, after rotating the wafer substrate 10 to a second rotation position, coating is continuously performed on the wafer surface during a set time period while the wafer substrate 10 is in the second rotation position. This can be achieved by... Figure 10 As shown in the first position, the wafer substrate 10 is rotated counterclockwise by a second included angle a+β, so that the wafer substrate 10 is in the position shown in the second included angle a+β. Figure 11 The second position shown.

[0086] In the first embodiment, the principle of coating the surface of the wafer substrate 10 is as follows: Figures 12-14 As shown.

[0087] refer to Figures 12-14 , Figure 12 This is a cross-sectional view of the wafer substrate in its initial position. Figure 13 This is a cross-sectional view of the wafer substrate in the first position. Figure 14 This is a cross-sectional view of the wafer substrate in the second position. Figures 12-14 All are cross-sectional views of the wafer substrate along the thickness direction, where L1 is the first axis.

[0088] When depositing a film on the surface of the wafer substrate 10 according to the first embodiment, after the wafer substrate 10 is rotated to the first position, its position relative to the surface of the stage 22 remains fixed for a set time period, and the film deposition continues on the surface of the wafer substrate 10 during this set time period. At this time, as... Figure 12 As shown, along one diameter direction of the wafer substrate 10, one end of the wafer substrate 10 (e.g.) Figure 13 The middle left end) is close to the target material 23, and the other end (such as...) Figure 13 The right end of the wafer substrate 10 is far from the target 23. Therefore, during this time period, the thickness of the film deposited at the end closer to the target 23 is larger, and the thickness of the film deposited at the end farther from the target 23 is smaller. Furthermore, the thickness of the deposited film decreases linearly and continuously from one end of the wafer substrate 10 to the other. At this time, a first film 31 can be formed on the surface of the wafer substrate 10 at the first position, and the thickness of the first film 31 gradually decreases along a diameter direction of the wafer substrate 10. In this method, the deposition on the surface of the wafer substrate 10 can also be periodically repeated at the first and second positions.

[0089] When depositing a film on the surface of the wafer substrate 10 according to the first embodiment, after the wafer substrate 10 is rotated to the second position, its position relative to the surface of the stage 22 remains fixed for a set time period, and the film is deposited continuously on the surface of the wafer substrate 10 during this set time period. At this time, as... Figure 13 As shown, along one diameter direction of the wafer substrate 10, one end of the wafer substrate 10 (e.g.) Figure 14 The middle right end) is close to the target material 23, and the other end (such as...) Figure 14The film thickness at the end closest to the target 23 is greater than that at the end furthest from the target 23 during this time period, and the film thickness at the end furthest from the target 23 is smaller. Furthermore, the thickness of the deposited film decreases linearly and continuously from one end of the wafer substrate 10 to the other. At this time, a second film 32 can be formed on the surface of the wafer substrate 10 at the second location, and the thickness of the second film 32 gradually decreases along a diameter direction of the wafer substrate 10.

[0090] If the deposited thin film on the surface of the wafer substrate 10 includes a first thin film 31 and a second thin film 32 stacked together, the thickness gradient of the deposited thin film can be controlled by adjusting the thickness ratio of the first thin film 31 and the second thin film 32.

[0091] When the wafer substrate 10 is continuously rotated in the same direction based on the first axis, if the plane where the wafer substrate is located has a first angle with the plane where the target is located, the distance between the center of the wafer substrate and the target is minimized, and the thickness of the deposited film gradually decreases from the center to the surface of the wafer substrate. If the plane where the wafer substrate is located has a second angle with the plane where the target is located, the distance between the center of the wafer substrate and the target is maximized, and the thickness of the deposited film gradually increases from the center to the surface of the wafer substrate.

[0092] In a first embodiment, by adjusting the rotation angle of the wafer substrate 10 relative to the surface of the stage 22, the wafer substrate 10 can be positioned at different first positions relative to the stage 22, thereby forming a first thin film 31 with continuously linearly varying thicknesses. Alternatively, the wafer substrate 10 can be positioned at different second positions relative to the stage 22, thereby forming a second thin film 32 with continuously linearly varying thicknesses. By controlling the rotation angle of the wafer substrate 10, stacked first thin films 31 and second thin films 32 can be sequentially formed on the surface of the wafer substrate 10, with both the thicknesses of the first thin film 31 and the second thin film 32 exhibiting continuously linear variations. In this method, by controlling the rotation angle of the wafer substrate 10, such as... Figure 14 As shown, the thickness of the first thin film 31 and the second thin film 32 after being stacked can be made to increase or decrease sequentially from one end to the other on the surface of the wafer substrate 10. In this method, the thickness of the first thin film 31 and the second thin film 32 after being stacked can also be made uniform and constant on the surface of the wafer substrate 10 by controlling the rotation angle of the wafer substrate 10.

[0093] In the first embodiment, the thicknesses of the first film 31 and the second film 32 are both linearly and continuously varying, and their upper surfaces are both planar.

[0094] If the wafer substrate 10 can rotate on the surface of the stage 22 based on the first axis, in the second embodiment, the above-mentioned condition applies at least when the wafer substrate 10 is in such a state as Figure 10 The first rotational position shown and the position as shown Figure 11When the second rotation position is shown, the wafer substrate 10 is coated with a film, including: based on the first axis, controlling the wafer substrate 10 to continuously rotate in the same direction, and continuously coating the surface of the wafer substrate during the rotation of the wafer substrate 10.

[0095] In the second embodiment, when depositing a film on the surface of the wafer substrate 10, the wafer substrate 10 continuously rotates in a circular motion, either continuously clockwise or continuously counterclockwise. Each rotation passes through a first position and a second position sequentially. In this embodiment, if the distance between the center of the wafer substrate 10 and the target material 23 remains constant across different rotation positions, the deposited thin film 33 formed on the surface of the wafer substrate 10 is a curved surface. On a circumference concentric with the center of the wafer substrate 10, the thickness of the deposited thin film 33 is the same; however, the thickness of the deposited thin film 33 varies at different circumferential positions.

[0096] At this time, the effect of the deposited thin film 33 formed on the surface of the wafer substrate 10 is as follows: Figures 15-17 As shown, a thin film 33 with a non-linearly continuously varying thickness can be formed on the surface of the wafer substrate 10.

[0097] refer to Figure 15 , Figure 15 This diagram illustrates a coating effect during the continuous rotation of a wafer substrate along a first axis for synchronous surface deposition. In this method, the distance between the center of the wafer substrate 10 and the target 23 remains constant during the rotation of the wafer substrate 10. Since the distance between the center of the wafer substrate 10 and the target 23 is the closest, the thickness of the deposited thin film 33 formed at the center is the greatest, while the thickness of the deposited thin film 33 formed at the edges of the wafer substrate 10 is the smallest. At this time, the deposited thin film 33 forms a conical protrusion structure on the surface of the wafer substrate 10.

[0098] refer to Figure 16 , Figure 16 This is an illustration of another coating effect during the continuous rotation of a wafer substrate based on a first axis. In this method, the distance between the center of the wafer substrate 10 and the target 23 remains constant during the rotation of the wafer substrate 10, and the distance between the center of the wafer substrate 10 and the target 23 is the farthest. Therefore, the thickness of the deposited film 33 formed at the center position is the smallest, and the thickness of the deposited film 33 formed at the edges of the wafer substrate 10 is the largest. At this time, the deposited film 33 forms a concave spherical structure on the surface of the wafer substrate 10.

[0099] refer to Figure 17 , Figure 17This is another coating effect diagram of synchronous surface coating performed on a wafer substrate during continuous rotation based on a first axis. In this method, the distance between the center of the wafer substrate 10 and the target 23 remains constant during the rotation of the wafer substrate 10, and the distance between the center of the wafer substrate 10 and the target 23 is the smallest. Therefore, the thickness of the deposited film 33 formed at the center position is the largest, and the thickness of the deposited film 33 formed at the edges of the wafer substrate 10 is the smallest. At this time, the deposited film 33 forms a convex spherical structure on the surface of the wafer substrate 10.

[0100] In the second embodiment, by keeping the distance between the center of the wafer substrate 10 and the target material 23 constant, a deposition film 33 with a non-linearly continuously varying thickness can be formed on the surface of the wafer substrate 10 during the continuous circumferential rotation of the wafer substrate 10.

[0101] If the wafer substrate 10 can rotate on the surface of the stage 22 based on the first axis, in the third embodiment, the above-mentioned condition applies at least when the wafer substrate 10 is in a position such as Figure 10 The first rotational position shown and the position as shown Figure 11 When the wafer substrate 10 is in the second rotation position shown, surface coating is performed on the wafer substrate 10, including: based on the first axis, controlling the wafer substrate to continuously reciprocate between the first rotation position and the second rotation position, and continuously performing coating on the wafer surface during the rotation of the wafer substrate.

[0102] In the third embodiment, when depositing a film on the surface of the wafer substrate 10, the wafer substrate 10 is continuously rotated back and forth between the first rotation position and the second rotation position. This allows a deposited thin film 33 with a three-dimensional curved surface on the surface of the wafer substrate 10 to be formed. Different three-dimensional graphic structures and three-dimensional curved surfaces can be formed by adjusting the first position and the second position.

[0103] In this embodiment, different position adjustment methods of the wafer substrate 10 can be combined to form a variety of deposition films with different thickness distributions on the surface of the wafer substrate 10. It is not limited to the method shown in the embodiment of this application. For example, a deposition film with a triangular prism protrusion structure can also be formed on the surface of the wafer substrate 10.

[0104] Based on any of the above embodiments, the stage 22 can also be configured to swing based on a second axis, which is parallel to the stage surface. In this case, during the formation of a deposited thin film on the surface of the wafer substrate 10, adjusting the position of the wafer substrate 10 to create deposited thin films of different thicknesses on its surface includes: performing surface coating on the wafer substrate 10 at least when the stage 22 is in a first swing position and a second swing position; wherein, in the first swing position, the surface of the stage 22 has a first swing angle relative to the second axis; and in the second swing position, the surface of the stage 22 has a second swing angle relative to the second axis, the first and second swing angles being different. In this embodiment, the stage 22 can also be made to revolve by adjusting its swing angle. By adjusting the swing angle of the stage 22, the angle of the normal to the plane containing the wafer substrate 10 (i.e., the first axis) relative to the horizontal plane can be adjusted, thereby adjusting the revolution angle of the stage 22. By adjusting the tilt angle of the stage 22, the relative position of the wafer substrate 10 and the target 23 can also be adjusted, thereby forming a deposition film of different thickness on the surface of the wafer substrate 10.

[0105] If the stage 22 can swing based on the second axis, in one manner, surface coating is performed on the wafer substrate 10 at least when the stage 22 is in the first swing position and the second swing position, respectively, including: first, after swinging the stage 22 to the first swing position, coating is continuously performed on the surface of the wafer substrate 10 during a set time period when the stage 22 is in the first swing position; then, after swinging the stage 22 to the second swing position, coating is continuously performed on the surface of the wafer substrate during a set time period when the stage is in the second swing position.

[0106] If the stage 22 can swing based on the second axis, in another manner, at least when the stage 22 is in the first swing position and the second swing position, the surface of the wafer substrate 10 is coated, including: based on the second axis, controlling the stage 22 to continuously swing back and forth between the first swing position and the second swing position, and continuously coating the surface of the wafer substrate 10 during the swinging process of the stage 22.

[0107] In this embodiment, while keeping the stage 22 stationary, the wafer substrate 10 can be rotated relative to the stage 22 to form deposition films of different thicknesses on its surface. Alternatively, the wafer substrate 10 and stage 22 can be kept relatively fixed, and the tilt angle of the stage 22 can be changed to form deposition films of different thicknesses on its surface. Furthermore, the wafer substrate 10 can be rotated relative to the stage 22, and the tilt angle of the stage 22 can be changed to form deposition films of different thicknesses on its surface. In this embodiment, by controlling the tilting of the stage 22 and controlling the rotation of the wafer substrate 10, the position of the wafer substrate 10 relative to the target 23 can be adjusted to form deposition films of different thicknesses on its surface.

[0108] As described above, in this embodiment, the thickness distribution of the deposited film on the surface of the wafer substrate 10 can be adjusted by either the revolution angle of the stage 22 or the rotation angle of the wafer substrate 10. The revolution angle can adjust the thickness difference of the deposited film relative to the target 23, while the rotation angle can achieve a thickness gradient change of the deposited film on the surface of the wafer substrate 10. The thickness of the deposited film can be adjusted to be continuous or discontinuous by controlling the revolution angle and revolution direction of the stage 22. Optionally, the rotation angle of the wafer substrate 10 can be in the range of 0~n*360°, where n is a positive integer.

[0109] In the thin film deposition method provided in this application embodiment, multiple thickness gradient films can be continuously deposited in a single process chamber 21 without disrupting the in-situ deposition environment, ensuring the continuity and adhesion between films of different thicknesses. By adjusting the revolution angle of the stage 22 and / or the rotation angle of the wafer substrate 10, the thickness gradient of the deposited film can be controlled, effectively meeting the usage requirements of functional structural devices for films of different thicknesses.

[0110] The rotation of the wafer substrate 10 based on the first axis is the rotation of the wafer substrate 10, and the oscillation of the stage 22 based on the second axis is the revolution of the stage 22. In the embodiments of this application, the rotation of the wafer substrate 10 and the revolution of the stage 22 can be controlled in a time-division manner, or the revolution of the stage 22 can be controlled while the rotation of the wafer substrate 10 is being controlled.

[0111] In this application, during the deposition of a thin film on the surface of the wafer substrate 10, the wafer substrate 10 is continuously controlled to rotate, and / or the stage 22 is continuously controlled to revolve, so that the thickness of the deposited thin film is either gradually decreasing or gradually increasing along each radial direction of the wafer substrate 10.

[0112] When the wafer substrate 10 is continuously controlled to rotate and / or the stage 22 is continuously controlled to revolve, a thin film is simultaneously deposited on the surface of the wafer substrate 10. The deposited thin film can be a thin film structure that is raised in the middle or recessed in the middle on the surface of the wafer substrate 10, which can be used as an optical lens.

[0113] It should be noted that, in the embodiments of this application, the above-mentioned various wafer position adjustment methods can be combined to form a deposition film with a variety of thickness distributions on the surface of the wafer substrate 10.

[0114] Based on any of the above embodiments, before forming the first ion beam, the thin film deposition method provided in this application further includes: emitting a third ion beam through an auxiliary source 25 to remove impurities and oxide layers from the surface of the wafer substrate 10. The third ion beam can clean the surface of the wafer substrate 10, removing impurities and oxide layers, thereby improving the surface cleanliness of the wafer substrate 10 and enhancing the adhesion stability of the deposited thin film on the surface of the wafer substrate 10.

[0115] The auxiliary source 25 is used to form the third ion beam. The gas source includes one or more of Ar, He, Ne, Kr, Xe, N2 and O2.

[0116] Optionally, the energy of the third ion beam formed by the auxiliary source 25 is less than 200 eV. This enables surface cleaning of the wafer substrate 10 under low-energy conditions, which not only improves the adhesion of the deposited thin film but also prevents excessive energy from damaging the surface structure of the wafer substrate 10. Furthermore, the energy range of the third ion beam can be set to 50 eV ~ 200 eV.

[0117] Under low-energy conditions, the surface of the wafer substrate 10 is cleaned by a third ion beam, which avoids damage to the surface of the wafer substrate 10, and also facilitates control of the chemical reaction rate, reduces the thermal impact, and improves cleaning efficiency and cleaning quality.

[0118] Based on any of the above embodiments, the process of depositing a thin film on the surface of the wafer substrate 10 further includes: changing the flow rate of at least one reactive gas introduced by the auxiliary source 25 to adjust the composition of the deposited thin film in the thickness direction. This method can also adjust the composition of the deposited thin film in the thickness direction by adjusting the flow rate of at least one reactive gas introduced by the auxiliary source 25 during the deposition process, thereby preparing a deposited thin film with a compositional gradient in the thickness direction. The reactive gas includes, but is not limited to, oxygen and nitrogen.

[0119] In this embodiment, the composition gradient of the deposited thin film can be controlled by adjusting the flow rate of the reactive gas introduced by the auxiliary source 25. For example, when the deposited thin film is an AlOx functional film, the value of x can be controlled to vary from 0.5 to 2 by controlling the oxygen flow rate in the reactive gas introduced by the auxiliary source 25, thus forming AlOx functional films with different oxygen element compositions.

[0120] When depositing a film on the surface of the wafer substrate 10, physical vapor deposition (PVD) can be used. PVD methods include, but are not limited to, magnetron sputtering, ion beam sputtering, and electron beam sputtering.

[0121] The thin film deposition method provided in this application embodiment can form deposited thin films of different thicknesses on the surface of a wafer substrate 10, and / or form deposited thin films with gradually varying compositions in the thickness direction. The deposited thin films of different thicknesses on the surface of the wafer substrate 10 can be deposited thin films with continuously varying thicknesses or deposited thin films with discontinuously varying thicknesses. Deposited thin films with discontinuously varying thicknesses can meet the requirements of asymmetric structure devices for thin films of different thicknesses.

[0122] Optionally, during the thin film deposition process, a crystal oscillator can be used to detect the film deposition thickness in real time. This allows for control of the deposition thickness at a specific location / region on the surface of the wafer substrate 10, ensuring good stability and repeatability for different batches of samples. If the crystal oscillator detects that the film thickness has reached the expected thickness, the film deposition can be stopped.

[0123] Because deposited thin films of varying thicknesses and / or compositions with gradual changes in composition along the thickness direction can be formed on the surface of the wafer substrate 10, the deposited thin films on the same wafer substrate 10 can have different thicknesses and compositions in different regions. Based on the differences in the thickness and composition of the deposited thin films, they can be used as functional thin films, exhibiting special electrical, electronic, optical, optoelectronic, thermal, chemical (catalytic), biological, and piezoelectric physical properties. Therefore, the wafer substrate 10 with deposited thin films can be used to study the influence of the thickness and composition of the deposited thin films on their performance, and can also be used as optical devices.

[0124] The following describes the process for preparing three different thin film samples using the thin film deposition method provided in the embodiments of this application, with specific process parameters.

[0125] Sample A:

[0126] The SiO2 / Al2O3 stacked functional thin film is a transition layer used in pressure-sensitive sensors. In this functional thin film, the first layer, with a thickness gradient, is a SiO2 film with a center thickness of 1 nm to 10 nm. The second layer, with a thickness gradient, is an Al2O3 film with a center thickness of 1 nm to 5 nm. All layers in the functional thin film are prepared sequentially using an ion beam process, as detailed below:

[0127] (1) The energy of the auxiliary source 25 is set to 100eV. He is introduced to generate neutral ions to clean the surface of the wafer substrate 10 to remove surface impurities and oxide layers.

[0128] (2) The stage 22 rotates to 30°, the wafer substrate 10 rotates to the first angle 0°, the main source 24 introduces Ar to bombard the Si target 23, and at the same time the auxiliary source 25 introduces the reactive gas O2 to generate reactive ions, and deposits to form a SiO2 thin film with the first thickness gradient.

[0129] Specifically, the adjustment of the revolution angle of the stage 22 can be set such that clockwise rotation of the stage 22 from a set initial position is a positive angle and counterclockwise rotation is a negative angle. Similarly, the adjustment of the rotation angle of the wafer substrate 10 can be set such that clockwise rotation of the wafer substrate 10 from a set initial position is a positive angle and counterclockwise rotation is a negative angle.

[0130] (3) Keep the stage 22 at a position of 30°, rotate the wafer substrate 10 to the second angle of 180°, and introduce Ar from the main source 24 to bombard the Al target 23. At the same time, introduce the reactive gas O2 from the auxiliary source 25 to generate reactive ions and deposit an Al2O3 thin film with a second thickness gradient.

[0131] (4) Repeat steps (2) and (3) several times to form a functional thin film with alternating SiO2 / Al2O3 layers.

[0132] Sample B:

[0133] The Mo / Si stacked functional thin film is mainly used as an EUV mask. In the functional thin film, the first layer with a thickness gradient is a Mo thin film with a sample center thickness of 1 nm to 3 nm. The second layer with a thickness gradient is a Si thin film with a sample center thickness of 1 nm to 3 nm. All layers of the functional thin film are prepared sequentially using a magnetron sputtering process. The specific steps are as follows:

[0134] (1) The energy of the auxiliary source 25 is set to 150eV. Ar is introduced to generate neutral ions to clean the surface of the wafer substrate 10 to remove surface impurities and oxide layers.

[0135] (2) The stage 22 rotates to 50°, the wafer substrate 10 rotates to the first angle 0°, the main source 24 introduces Ar to bombard the Mo target 23, and deposits a Mo thin film with the first thickness gradient.

[0136] (3) Keep the stage 22 at a position of 50°, rotate the wafer substrate 10 to the second angle of 120°, and introduce Ar into the main source 24 to bombard the Si target 23 to deposit a Si thin film with a second thickness gradient.

[0137] (4) Repeat steps (2) and (3) several times to form a functional thin film with alternating Mo / Si layers.

[0138] Sample C:

[0139] The Al / SiO2 / Ta2O5 stacked functional thin film is an optical thin film used in the field of optical filters. In this functional thin film, the first layer with a thickness gradient is an Al film with a center thickness of 30nm~50nm. The second layer with a thickness gradient is a SiO2 film with a center thickness of 100nm~150nm. The third layer with a thickness gradient is a Ta2O5 film with a center thickness of 100nm~150nm. All layers of the functional thin film are prepared sequentially using an ion beam deposition process. The specific steps are as follows:

[0140] (1) The energy of the auxiliary source 25 is set to 100eV, and Ar is introduced to generate neutral ions to clean the surface of the wafer substrate 10 to remove surface impurities and oxide layers.

[0141] (2) The stage 22 rotates to 45°, the wafer substrate 10 rotates to the first angle 0°, the main source 24 introduces Ar to bombard the Al target 23, and deposits an Al thin film with the first thickness gradient.

[0142] (3) The stage 22 rotates to 45°, the wafer substrate 10 rotates to the second angle 60°, the main source 24 introduces Ar to bombard the Si target 23, and at the same time the auxiliary source 25 introduces the reactive gas O2 to generate reactive ions, and deposits a SiO2 thin film with a second thickness gradient.

[0143] (4) The stage 22 rotates to 45°, the wafer substrate 10 rotates to the second angle 120°, the main source 24 introduces Ar to bombard the Ta target 23, and at the same time the auxiliary source 25 introduces the reactive gas O2 to generate reactive ions, and deposits a Ta2O5 thin film with a third thickness gradient.

[0144] (5) Repeat steps (3) and (4) several times to form a functional thin film with alternating Al / SiO2 / Ta2O5 layers.

[0145] Based on the thin film deposition method provided in the above embodiments, another embodiment of this application also provides a coating apparatus, which can perform the following... Figure 8 As shown, it includes:

[0146] Process chamber 21;

[0147] The target material 23, the main source 24, and the auxiliary source 25 are fixedly installed at different positions in the process chamber 21;

[0148] A stage 22 is disposed on top of the process chamber 21, and the stage 22 is used to place the wafer substrate 10.

[0149] The main source 24 can emit a first ion beam with a fixed transmission direction. The first ion beam is used to bombard the target 23 to form sputtered particles. The auxiliary source 25 can emit a second ion beam with a fixed transmission direction. The second ion beam is used to react with the sputtered particles to form deposited particles, so as to form a deposited thin film on the surface of the wafer substrate 10.

[0150] During the deposition of a thin film on the surface of a wafer substrate 10, the coating apparatus can adjust the position of the wafer substrate 10 so that the deposited thin film on the surface of the wafer substrate 10 has different thicknesses, with the first thickness being different from the second thickness.

[0151] The coating apparatus has two ion sources: the main source 24 is used at least for sputtering the target 23, and the auxiliary source 25 can be used for cleaning the surface of the wafer substrate 10 and providing reactive gases.

[0152] In this embodiment of the application, thin film deposition can be performed on the surface of the wafer substrate 10 simultaneously by using the main source 24 and the auxiliary source 25. At this time, during the coating process, the main source 24 and the auxiliary source 25 need to emit the first ion beam and the second ion beam, respectively.

[0153] In other methods, thin film deposition can also be performed on the surface of the wafer substrate 10 using only the main source 24. In this case, during the deposition process, the ion beam emitted from the main source 24 can be used as both the first ion beam sputtering target 23 and the second ion beam to form deposited particles with the sputtered particles.

[0154] Optionally, the wafer substrate 10 can rotate on the stage surface based on a first axis perpendicular to the stage surface; or, the stage 22 can swing based on a second axis parallel to the stage surface.

[0155] The various embodiments in this application are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. The embodiments provided in this application can be combined with each other without contradiction.

[0156] The terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component positioned centrally in the middle.

[0157] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0158] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition method, characterized in that, include: A wafer substrate is placed on the stage surface within the process chamber of a coating equipment; the process chamber contains a target material and a main source material with fixed positions. The target material is bombarded by a first ion beam emitted from the main source to form sputtered particles, and a deposited thin film is formed on the surface of the wafer substrate based on the sputtered particles; During the process of forming the deposited thin film on the surface of the wafer substrate, the position of the wafer substrate is adjusted so that the deposited thin film with different thicknesses is formed on the surface of the wafer substrate.

2. The thin film deposition method according to claim 1, characterized in that, The process chamber also has a fixed auxiliary source; the auxiliary source can emit a second ion beam, which can react with the sputtered particles to form deposited particles, thereby forming the deposited thin film on the surface of the wafer substrate through the deposited particles.

3. The thin film deposition method according to claim 1, characterized in that, The wafer substrate is capable of rotating on the stage surface based on a first axis, the first axis being perpendicular to the stage surface; the stage is capable of oscillating based on a second axis, the second axis being parallel to the stage surface. During the formation of the deposited thin film on the surface of the wafer substrate, the oscillation of the stage causes the plane of the wafer substrate to form an angle with the plane of the target material. Adjusting the position of the wafer substrate to create deposited films of different thicknesses on the surface of the wafer substrate includes: At least when the wafer substrate is in the first rotation position and the second rotation position, the surface of the wafer substrate is coated. In the first rotation position, the wafer substrate has a first angle relative to the initial position; in the second rotation position, the wafer substrate has a second angle relative to the initial position, and the first angle and the second angle are different.

4. The thin film deposition method according to claim 3, characterized in that, At least when the wafer substrate is in a first rotational position and a second rotational position, a surface coating is performed on the wafer substrate, including: After the wafer substrate is rotated to the first rotation position, a coating is continuously applied to the surface of the wafer substrate during a set time period while the wafer substrate is in the first rotation position. After the wafer substrate is rotated to the second rotation position, a coating is continuously applied to the surface of the wafer substrate during a set time period while the wafer substrate is in the second rotation position. or, Based on the first axis, the wafer substrate is controlled to continuously rotate in the same direction, and during the rotation of the wafer substrate, a film is continuously deposited on the surface of the wafer substrate. or, Based on the first axis, the wafer substrate is controlled to continuously reciprocate between the first rotation position and the second rotation position, and during the rotation of the wafer substrate, a coating is continuously applied to the surface of the wafer substrate.

5. The thin film deposition method according to claim 4, characterized in that, When the wafer substrate is continuously rotated in the same direction based on the first axis, if the plane where the wafer substrate is located has a first angle with the plane where the target is located, such that the distance between the center of the wafer substrate and the target is minimized, the thickness of the deposited film gradually decreases from the center to the surface of the wafer substrate. If the plane where the wafer substrate is located has a second angle with the plane where the target is located, such that the distance between the center of the wafer substrate and the target is maximized, the thickness of the deposited film gradually increases from the center to the surface of the wafer substrate.

6. The thin film deposition method according to claim 3, characterized in that, During the formation of the deposited thin film on the surface of the wafer substrate, adjusting the position of the wafer substrate to achieve deposited thin films of different thicknesses on the surface of the wafer substrate includes: At least when the stage is in the first swing position and the second swing position, the wafer substrate is surface coated. In the first swing position, the surface of the platform has a first swing angle relative to the second axis; in the second swing position, the surface of the platform has a second swing angle relative to the second axis, and the first swing angle is different from the second swing angle.

7. The thin film deposition method according to claim 6, characterized in that, At least when the stage is in a first swing position and a second swing position, surface coating is performed on the wafer substrate, including: After the stage is swung to the first swung position, the coating is continuously applied to the surface of the wafer substrate during a set time period while the stage is in the first swung position. After the stage is swung to the second swung position, the coating is continuously applied to the surface of the wafer substrate during a set time period while the stage is in the second swung position. or, Based on the second axis, the stage is controlled to continuously oscillate between the first oscillation position and the second oscillation position, and during the oscillation of the stage, a film is continuously deposited on the surface of the wafer substrate.

8. The thin film deposition method according to claim 6, characterized in that, The rotation of the wafer substrate based on the first axis is the rotation of the wafer substrate, and the oscillation of the stage based on the second axis is the revolution of the stage; the wafer substrate is controlled to rotate and the stage is controlled to revolve in a time-division manner, or the stage is controlled to revolve while the wafer substrate is controlled to rotate.

9. The thin film deposition method according to claim 8, characterized in that, During the deposition of a thin film on the surface of the wafer substrate, the wafer substrate is continuously controlled to rotate, and / or the stage is continuously controlled to revolve, so that the thickness of the deposited thin film gradually decreases or gradually increases along each radial direction of the wafer substrate.

10. The thin film deposition method according to claim 2, characterized in that, Before forming the first ion beam, the process also includes: A third ion beam is emitted from the auxiliary source to remove impurities and oxide layers from the surface of the wafer substrate.

11. The thin film deposition method according to claim 10, characterized in that, The energy of the auxiliary source forming the third ion beam is less than 200 eV.

12. The thin film deposition method according to claim 2, characterized in that, The process of depositing a thin film on the surface of the wafer substrate also includes: The flow rate of at least one reactive gas introduced by the auxiliary source is changed to adjust the composition of the deposited film in the thickness direction.

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