Semiconductor wafer coating device

By using a negative pressure tank and a heat-conducting heating mechanism in the wafer coating apparatus to maintain the temperature of the rotary table edge, the problems of poor flowability and contamination caused by edge cooling during the spin coating process of photoresist are solved, achieving stable adhesive flowability and clean wafer processing.

CN117139073BActive Publication Date: 2026-07-10SHENZHEN SHUANGSHI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHENZHEN SHUANGSHI TECH CO LTD
Filing Date
2023-08-25
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In existing technologies, during the spin coating process of wafer photoresist, the rapid cooling of the photoresist at the edges leads to poor flowability, forming edge rings that affect the working area on the wafer and cause contamination.

Method used

A semiconductor wafer coating apparatus is used, including a rotary table, a negative pressure air shaft, a rotation mechanism, a lifting mechanism, and a heating mechanism. The wafer is adsorbed and fixed by a negative pressure groove, and the heat-conducting component in the annular groove is used for heating to keep the temperature of the rotary table edge constant and prevent the adhesive from cooling down rapidly.

Benefits of technology

It effectively prevents the photoresist from cooling rapidly at the wafer edge, provides sufficient time to remove the edge ring, ensures stable adhesive flow on the wafer, and avoids contamination and quality issues.

✦ Generated by Eureka AI based on patent content.

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    Figure CN117139073B_ABST
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Abstract

This invention relates to a semiconductor wafer coating apparatus. The apparatus includes a rotating stage supporting the wafer, a negative pressure air shaft coaxially penetrating the rotating stage, a rotating mechanism driving the rotating stage to rotate horizontally, and a lifting column vertically disposed below the rotating stage, as well as a lifting mechanism driving the lifting column to move up and down. The upper surface of the rotating stage is provided with a negative pressure groove communicating with the inner cavity of the negative pressure air shaft. The rotating stage is provided with through holes for the lifting columns to pass through, and there are multiple lifting columns corresponding to each through hole. The lower surface edge of the rotating stage is coaxially provided with an annular groove, and a sealing plate is also provided to seal the annular groove. A heat-conducting element is provided in the annular groove, and a heating mechanism is provided below the annular groove to heat the heat-conducting element. During processing, the wafer is placed flat on the rotating stage and fixed by adsorption through the negative pressure groove. The heating mechanism heats the heat-conducting element in the annular groove, so that the edge temperature of the rotating stage remains constant. In turn, the edge of the wafer can be kept at a certain temperature through heat conduction to prevent the adhesive from cooling down rapidly.
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